CN111510089B - Low-noise amplifying module with bypass function and control method - Google Patents
Low-noise amplifying module with bypass function and control method Download PDFInfo
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- CN111510089B CN111510089B CN202010361116.3A CN202010361116A CN111510089B CN 111510089 B CN111510089 B CN 111510089B CN 202010361116 A CN202010361116 A CN 202010361116A CN 111510089 B CN111510089 B CN 111510089B
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- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 27
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The invention discloses a low-noise amplifying module with bypass function and a control method thereof, belonging to the technical field of monolithic radio frequency/microwave integrated circuits; the low-noise amplification module with the bypass function comprises a first single-pole double-throw radio frequency switch, a second single-pole double-throw radio frequency switch and a low-noise amplifier; the first output end of the first single-pole double-throw radio frequency switch is connected with the input end of the low-noise amplifier; the second output end of the first single-pole double-throw radio frequency switch is connected with the first input end of the second single-pole double-throw radio frequency switch; the output end of the low-noise amplifier is connected with the second input end of the second single-pole double-throw radio frequency switch; the invention integrates two radio frequency switches on the basis of the low noise amplifier, thereby realizing the bypass function. The method has obvious influence on the range of the input signal, can process the signal with the amplitude lower than that of the input 1dB compression point signal of the low noise amplifier, can process the signal with the amplitude higher than that of the input 1dB compression point signal, and effectively improves the dynamic range of the system.
Description
Technical Field
The invention discloses a low-noise amplifying module with a bypass function and a control method, and belongs to the technical field of single-chip radio frequency/microwave integrated circuits.
Background
The low noise amplifier is a key component in a wireless receiving and transmitting system and is widely applied to the fields of wireless communication, broadcast television, point-to-point communication and the like. The low noise amplifier is in the first stage of the receiver and its noise figure determines the noise figure of the system. In the system, a conventional low noise amplifier is in an operating state when receiving a signal and is in an off state when transmitting a signal. When receiving signals, the output signal of the low noise amplifier cannot be too large due to the limitation of the signal processing capability of the low noise amplifier, otherwise the low noise amplifier is pushed to saturation, and the low noise amplifier may be burnt out by the too large signal.
In modern wireless transceiver systems, low noise amplifiers are required to have large signal transmission capabilities in addition to being able to handle small signal amplification; but the related art is still lacking.
Disclosure of Invention
Based on the problems existing in the prior art, the invention realizes a low-noise amplification module with bypass function based on the GaAs PHEMT technology and a control method thereof, and aims to improve the signal dynamic range of a low-noise amplifier.
In a first aspect of the present invention, the present invention provides a low noise amplification module with a bypass function, the low noise amplification module including a first single pole double throw radio frequency switch, a second single pole double throw radio frequency switch, and a low noise amplifier; the first output end of the first single-pole double-throw radio frequency switch is connected with the input end of the low-noise amplifier; the second output end of the first single-pole double-throw radio frequency switch is connected with the first input end of the second single-pole double-throw radio frequency switch; the low noise amplifier output is connected to the second input of the second single pole double throw radio frequency switch.
Preferably, the first single pole double throw radio frequency switch and the second single pole double throw radio frequency switch are the same switch.
Optionally, the switch includes a plurality of transistors for turning on and off, a plurality of capacitors for isolating external dc voltage, and a plurality of resistors for controlling an incident frequency end of the signal string.
Preferably, the switch comprises two transistors, three capacitors and three resistors; the source electrode of the transistor M1 is connected with the capacitor C1; the drain electrode of the transistor M1 is connected with the capacitor C3; the gate of the transistor M1 is connected to the resistor R1; the source electrode of the transistor M2 is connected with the capacitor R3; the drain electrode of the transistor M2 is connected with the capacitor C2; the gate of the transistor M2 is connected to the resistor R2; wherein, the resistor R1 and the resistor R3 are both connected with the voltage VC; resistor R2 is grounded.
Further, the low noise amplifier comprises a bias network, an amplifying network and a negative feedback network; the bias network provides a direct current bias for the transistors of the amplifying network; the amplifying network is used for realizing the function of amplifying radio frequency signals; the negative feedback network is used for realizing impedance matching.
Preferably, the bias network comprises a transistor M3, five resistors R4, R5, R6, R7, R8, two capacitors C3, C4, and an inductor L1; one end of the resistor R4 is connected with a power supply, and the other end of the resistor R is connected with the drain electrode of the transistor M3; the drain electrode of the transistor M3 is connected with the grid electrode; one end of the capacitor C4 is connected with the ground, and the other end of the capacitor C is connected with the grid electrode of the transistor M3; one end of the resistor R5 is connected with the grid electrode of the transistor M3, and the other end of the resistor R is used for providing bias for the amplifying network; one end of the resistor R6 is connected with a power supply, and the other end of the resistor R6 is connected with the resistors R7 and R8; the other end of the resistor R8 is connected with the ground; the other end of the resistor R7 provides direct current bias for a transistor of the amplifying network; one end of the capacitor C5 is connected with one end of the R8, and the other end of the capacitor C is grounded; one end of the inductor L1 is connected with a power supply, and the other end supplies power for a transistor of the amplifying network.
Preferably, the amplifying network comprises two transistors, namely transistors M4 and M5, the source of transistor M4 being connected to ground and the drain of transistor M4 being connected to the source of transistor M5.
Preferably, the negative feedback network comprises a capacitor C6 and a resistor R9, wherein one end of the capacitor C6 is connected with the drain electrode of the transistor of the amplifying network, and the other end of the capacitor C6 is connected with the resistor R9; the other end of the resistor R9 is connected with the grid electrode of the transistor of the amplifying network.
In a second aspect of the present invention, the present invention also provides a low noise amplification control method with a bypass function; the method comprises the following steps:
inputting a radio frequency signal from an IN port;
the method comprises the steps of selecting a first path or a second path through a first single-pole double-throw radio frequency switch;
in the first path, a low noise amplifier is selected to be entered to realize signal amplification, and the signal is transmitted to an OUT port after passing through a second single-pole double-throw radio frequency switch;
in the second path, the signal is selectively transmitted to the OUT port after passing through a second single pole double throw radio frequency switch.
Preferably, IN order to improve the overall dynamic range of the system, a first path or a second path is selected through a 1dB compression point, and when the radio frequency signal input from the IN port is lower than the 1dB compression point input by the low noise amplifier, the first path is selected to amplify the signal and then send to the post-stage for processing; when the radio frequency signal input from the IN port is greater than the 1dB compression point input to the low noise amplifier, the second path is selected to transmit the signal to the post-processing because the low noise amplifier cannot process such signal.
The invention has the beneficial effects that: the invention integrates two radio frequency switches on the basis of the low noise amplifier, thereby realizing the bypass function. The method has obvious influence on the range of the input signal, can process the signal with the amplitude lower than that of the input 1dB compression point signal of the low noise amplifier, can process the signal with the amplitude higher than that of the input 1dB compression point signal, and effectively improves the dynamic range of the system.
Drawings
Fig. 1 is a block diagram of a conventional low noise amplifier;
FIG. 2 is a general block diagram of a low noise amplification module with bypass according to the present invention;
FIG. 3 is a circuit diagram of a radio frequency switch in the low noise amplifier module with bypass function according to the present invention;
FIG. 4 is a general block diagram of a low noise amplifier in a low noise amplification block with bypass function of the present invention;
FIG. 5 is a circuit diagram of a low noise amplifier module with bypass according to the present invention;
FIG. 6 is a flow chart of a low noise amplification control method with bypass function according to the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown IN fig. 1, a block diagram of a conventional low noise amplifier includes an input port (IN port) and an output port (OUT port). When the signal exceeds the input 1dB compression point of the low noise amplifier, the low noise amplifier output signal is compressed and distorted.
In one embodiment, to address the shortcomings of conventional low noise amplifiers; the present invention employs a general block diagram of a low noise amplification module with bypass as shown in fig. 2.
The low-noise amplification module with the bypass function comprises a first single-pole double-throw radio frequency switch K1, a second single-pole double-throw radio frequency switch K2 and a low-noise amplifier AMP; the first output end RF1 of the first single-pole double-throw radio frequency switch is connected with the input end LNA-IN of the low noise amplifier; the second output end RF2 of the first single-pole double-throw radio frequency switch is connected with the first input end RF1 of the second single-pole double-throw radio frequency switch; the low noise amplifier output LNA-OUT is connected to a second input R2 of a second single pole double throw radio frequency switch.
The first single-pole double-throw radio frequency switch K1 and the second single-pole double-throw radio frequency switch K2 can realize a signal path selection function; the low noise amplifier AMP realizes a signal amplifying function. The input signal may be amplified or passed through by the radio frequency switches K1 and K2 select signals.
Because the radio frequency switch and the low noise amplifier are integrated in the low noise amplifier, when the signal amplitude is lower than the input 1dB compression point of the low noise amplifier, the radio frequency signal is transmitted to the amplifier AMP through the radio frequency switch K1 and is transmitted to the radio frequency switch K2 after being amplified by the amplifier AMP; when the signal amplitude is larger than the 1dB compression point of the input of the low noise amplifier, the signal is directly transmitted to the radio frequency switch K2 through the radio frequency switch K1 and is transmitted to the rear stage through the radio frequency switch K2. The signal is not compressed because the 1dB compression point of the radio frequency switch itself is high.
In one embodiment, the first single pole double throw radio frequency switch and the second single pole double throw radio frequency switch are the same switch; the switch comprises a plurality of transistors for switching on and switching off, a plurality of capacitors for isolating external direct-current voltage and a plurality of resistors for controlling the frequency end of the signal string; the control signal quantity can be reduced on the premise of not designing a numerical control circuit, and the design complexity is greatly simplified.
The input signal may be amplified or passed through by the radio frequency switches K1 and K2 select signals. When the signal is lower than the input 1dB compression point of the low noise amplifier, the input signal is selected to enter the input end of the low noise amplifier through a switch K1 to realize signal amplification, and the amplified signal is output through a switch K2; when the signal is higher than the 1dB compression point of the input of the low noise amplifier, the input signal selects a through path through the switch K1 and directly enters the switch K2, and the signal is prevented from being compressed and distorted.
In a preferred embodiment, the switch may further comprise two transistors, three capacitors and three resistors, as shown in fig. 3; the source electrode of the transistor M1 is connected with the capacitor C1; the drain electrode of the transistor M1 is connected with the capacitor C3; the gate of the transistor M1 is connected to the resistor R1; the source electrode of the transistor M2 is connected with the capacitor R3; the drain electrode of the transistor M2 is connected with the capacitor C2; the gate of the transistor M2 is connected to the resistor R2; wherein, the resistor R1 and the resistor R3 are both connected with the voltage VC; resistor R2 is grounded; in this embodiment, the transistors M1 and M2 realize the on or off function by controlling the voltage VC. The transistor M1 is turned on and off by controlling the grid electrode, the grid electrode of the transistor M2 is clamped to the ground, and the source stage of the transistor M1 is controlled to realize the on and off, so that the complexity is very low, and the implementation is convenient.
In this embodiment, the control voltage VC provides the control signal to the transistors M1, M2 through the resistors R3, R1. Wherein the control voltage VC controls the gate voltage of the transistor M1 to realize the on or off of the transistor M1; in addition, the transistor M2 is turned on or off by controlling the source of the transistor M2 through the resistor R3. The control mode has the advantage that the functions of turning on and turning off a transistor can be realized by adopting one control signal.
In one embodiment, as shown in fig. 4, a block diagram structure of a low noise amplifier is provided, the low noise amplifier includes a bias network, an amplifying network, and a negative feedback network; the bias network provides a direct current bias for the transistors of the amplifying network; the amplifying network is used for realizing the function of amplifying radio frequency signals; the negative feedback network is used for realizing impedance matching; the bias network provided by the invention can adopt a CASCODE (common grid) amplifying structure to provide grid voltage bias for the low-noise amplifier; the negative feedback network can realize good input and output return loss in a wider frequency band; the amplifying network can realize high power gain; the low-noise amplifier realized by the embodiment has more stable power supply current and radio frequency parameters at high and low temperatures.
In a preferred embodiment, as shown in fig. 5, a circuit configuration of each network in the low noise amplifier is given:
the bias network comprises a transistor M3, five resistors R4, R5, R6, R7 and R8, two capacitors C3 and C4 and an inductor L1; one end of the resistor R4 is connected with a power supply, and the other end of the resistor R is connected with the drain electrode of the transistor M3; the drain electrode of the transistor M3 is connected with the grid electrode; one end of the capacitor C4 is connected with the ground, and the other end of the capacitor C is connected with the grid electrode of the transistor M3; one end of the resistor R5 is connected with the grid electrode of the transistor M3, and the other end of the resistor R is used for providing bias for the amplifying network; one end of the resistor R6 is connected with a power supply, and the other end of the resistor R6 is connected with the resistors R7 and R8; the other end of the resistor R8 is connected with the ground; the other end of the resistor R7 provides direct current bias for a transistor M5 of the amplifying network; one end of the capacitor C5 is connected with one end of the R8, and the other end of the capacitor C is grounded; one end of the inductor L1 is connected with a power supply, and the other end of the inductor L is connected with the drain electrode of the transistor M5 to supply power to the transistor M5 of the amplifying network.
The amplifying network comprises two transistors, namely a transistor M4 and a transistor M5, wherein the source electrode of the transistor M4 is connected with the ground, and the drain electrode of the transistor M4 is connected with the source electrode of the transistor M5; the drain of transistor M5 is connected to the inductance L1 of the bias network and the source of M4 is connected to the resistance R5 of the bias network.
The negative feedback network comprises a capacitor C6 and a resistor R9, wherein one end of the capacitor C6 is connected with the drain electrode of the transistor M5 of the amplifying network, and the other end of the capacitor C6 is connected with the resistor R9; the other end of the resistor R9 is connected with the grid electrode of the transistor M4 of the amplifying network.
Through the arrangement, the power supply current and the radio frequency parameters of the low-noise amplifier can be more stable at high and low temperatures.
In the field of low noise amplifiers, the enhanced PHEMT of the gallium arsenide material has great advantages, manufacturers at home and abroad mainly concentrate on the enhanced PHEMT technology for high-performance low noise amplifier products at present, one of the working frequency bands of the fifth generation mobile communication system is the sub 6G frequency band, and in the frequency band, the noise coefficient of the enhanced PHEMT technology of the gallium arsenide material is lower, higher gain can be provided, higher linearity and transconductance are provided, and only a single power supply is needed for supplying power, so that the requirement of designing the low noise amplifier is met.
In one embodiment, the transistor in the present invention is optionally an enhanced PHEMT device. The enhanced PHEMT device is a voltage control device in which the channel resistance is controlled by the gate voltage and the drain current is controlled by the channel resistance. All of the transistors M1, M2, M3, M4 and M5 in this embodiment may be enhancement type PHEMT of gallium arsenide material. The radio frequency switch of the embodiment can be manufactured based on the enhanced PHEMT technology of gallium arsenide materials and can be compatible with the low noise amplifier technology.
In one embodiment, as shown in fig. 6, the present invention further provides a low noise amplification control method with a bypass function, where the method includes:
inputting a radio frequency signal from an IN port;
the method comprises the steps of selecting a first path or a second path through a first single-pole double-throw radio frequency switch;
in the first path, a low noise amplifier is selected to be entered to realize signal amplification, and the signal is transmitted to an OUT port after passing through a second single-pole double-throw radio frequency switch;
in the second path, the signal is selectively transmitted to the OUT port after passing through a second single pole double throw radio frequency switch.
IN a preferred embodiment, when the radio frequency signal input from the IN port is lower than the 1dB compression point of the low noise amplifier input, the first path is selected for signal amplification and then sent to the post-stage processing; when the radio frequency signal input from the IN port is greater than the 1dB compression point of the low noise amplifier input, the second path is selected to transmit the signal to the post-processing.
In a complementary embodiment, the present embodiment further provides a low noise amplifying chip, which may be applied to the fifth generation mobile communication base station, and includes any of the low noise amplifying modules with bypass function described in the foregoing embodiments, and has the beneficial effects of the foregoing control circuit.
It will be appreciated that some of the features of the amplifying module and the control method in the present invention may be mutually cited, and the present invention is not limited to the examples described herein.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. The low-noise amplification module with the bypass function is characterized by comprising a first single-pole double-throw radio frequency switch, a second single-pole double-throw radio frequency switch and a low-noise amplifier; the first output end of the first single-pole double-throw radio frequency switch is connected with the input end of the low-noise amplifier; the second output end of the first single-pole double-throw radio frequency switch is connected with the first input end of the second single-pole double-throw radio frequency switch; the output end of the low-noise amplifier is connected with the second input end of the second single-pole double-throw radio frequency switch; the low noise amplifier comprises a bias network, an amplifying network and a negative feedback network; the bias network provides a direct current bias for the transistors of the amplifying network; the amplifying network is used for realizing the function of amplifying radio frequency signals; the negative feedback network is used for realizing impedance matching; the bias network comprises a transistor M3, five resistors R4, R5, R6, R7 and R8, two capacitors C4 and C5 and an inductor L1; one end of the resistor R4 is connected with a power supply, and the other end of the resistor R is connected with the drain electrode of the transistor M3; the drain electrode of the transistor M3 is connected with the grid electrode; one end of the capacitor C4 is connected with the ground, and the other end of the capacitor C is connected with the grid electrode of the transistor M3; one end of the resistor R5 is connected with the grid electrode of the transistor M3, and the other end of the resistor R is used for providing bias for the amplifying network; one end of the resistor R6 is connected with a power supply, and the other end of the resistor R6 is connected with the resistors R7 and R8; the other end of the resistor R8 is connected with the ground; the other end of the resistor R7 provides direct current bias for a transistor of the amplifying network; one end of the capacitor C5 is connected with one end of the R8, and the other end of the capacitor C is grounded; one end of the inductor L1 is connected with a power supply, and the other end supplies power for a transistor of the amplifying network.
2. The low noise amplification module with bypass function of claim 1, wherein the first single pole double throw radio frequency switch and the second single pole double throw radio frequency switch are the same switch.
3. The low noise amplification module with bypass function according to claim 2, wherein each single pole double throw radio frequency switch comprises a plurality of transistors for turning on and off, a plurality of capacitors for isolating external dc voltages, and a plurality of resistors for controlling the frequency side of the signal string.
4. The low noise amplification module with bypass function according to claim 2, wherein each single pole double throw radio frequency switch further comprises two transistors, three capacitors and three resistors; the source electrode of the transistor M1 is connected with the capacitor C1; the drain electrode of the transistor M1 is connected with the capacitor C3; the gate of the transistor M1 is connected to the resistor R1; the source of the transistor M2 is connected to the resistor R3; the drain electrode of the transistor M2 is connected with the capacitor C2; the gate of the transistor M2 is connected to the resistor R2; wherein, the resistor R1 and the resistor R3 are both connected with the voltage VC; resistor R2 is grounded.
5. A low noise amplifier module with bypass function according to claim 1, wherein the amplifying network comprises two transistors, namely transistor M4 and transistor M5, the source of transistor M4 being connected to ground and the drain of transistor M4 being connected to the source of transistor M5.
6. The low noise amplification module with bypass function according to claim 1, wherein the negative feedback network comprises a capacitor C6 and a resistor R9, wherein one end of the capacitor C6 is connected to the drain of the transistor of the amplification network, and the other end is connected to the resistor R9; the other end of the resistor R9 is connected with the grid electrode of the transistor of the amplifying network.
7. The low noise amplification control method with bypass function is applied to the low noise amplification module with bypass function as set forth in any one of claims 1 to 6, and is characterized in that the method includes:
inputting a radio frequency signal from an IN port;
the method comprises the steps of selecting a first path or a second path through a first single-pole double-throw radio frequency switch;
in the first path, a low noise amplifier is selected to be entered to realize signal amplification, and the signal is transmitted to an OUT port after passing through a second single-pole double-throw radio frequency switch;
in the second path, the amplified radio frequency signal is transmitted to the OUT port after passing through the second single-pole double-throw radio frequency switch.
8. The method for controlling low noise amplification with bypass function according to claim 7, wherein when the radio frequency signal inputted from the IN port is lower than the 1dB compression point inputted from the low noise amplifier, the first path is selected for signal amplification and then sent to the post-stage processing; when the radio frequency signal input from the IN port is greater than the 1dB compression point of the low noise amplifier input, the second path is selected to transmit the signal to the post-processing.
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| CN113037232B (en) * | 2021-03-12 | 2023-11-03 | 上海旦迪通信技术有限公司 | A radio frequency amplifier with BYPASS path |
| CN113422583B (en) * | 2021-06-08 | 2025-01-28 | 锐石创芯(深圳)科技股份有限公司 | Low noise amplifier circuit, radio frequency front-end module and control method |
| CN113572437B (en) * | 2021-07-29 | 2022-03-04 | 电子科技大学 | GaAs self-bias low-noise amplifier with direct connection selection structure |
| CN113472383A (en) * | 2021-07-30 | 2021-10-01 | 江苏卓胜微电子股份有限公司 | Radio frequency front end module and 5G large-scale MIMO base station system |
| CN113659998B (en) * | 2021-08-19 | 2023-03-14 | 中国电子科技集团公司第三十八研究所 | Wide dynamic anti-saturation low-noise circuit and control method |
| CN114614772B (en) * | 2022-03-18 | 2023-05-23 | 无锡华睿芯微电子科技有限公司 | Single power supply pulse control high-frequency bidirectional amplifying circuit |
| CN116996028B (en) * | 2023-08-10 | 2024-10-15 | 无锡华睿芯微电子科技有限公司 | Single-power-supply pulse-controlled switching power amplifier and amplifier chip |
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