CN111360686A - Chemical mechanical polishing and cleaning method and device for semiconductor wafer - Google Patents
Chemical mechanical polishing and cleaning method and device for semiconductor wafer Download PDFInfo
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- CN111360686A CN111360686A CN202010325472.XA CN202010325472A CN111360686A CN 111360686 A CN111360686 A CN 111360686A CN 202010325472 A CN202010325472 A CN 202010325472A CN 111360686 A CN111360686 A CN 111360686A
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- cleaning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/06—Dust extraction equipment on grinding or polishing machines
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- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a chemical mechanical polishing and cleaning method for a semiconductor wafer, which comprises the steps of providing a wafer to be polished and carrying out chemical mechanical planarization polishing on the wafer to be polished; supplying a first cleaning liquid, and regrinding the wafer after the planarization grinding; and conveying the wafer after the re-grinding to a cleaning module, and cleaning after grinding. The method can effectively remove the residual particles in the chemical mechanical polishing process of the wafer, does not need to introduce new equipment, and can be used for low-cost modification.
Description
Technical Field
The invention relates to the technical field of chemical mechanical polishing in semiconductor manufacturing, in particular to a method and a device for chemically and mechanically grinding and cleaning a semiconductor wafer.
Background
Chemical mechanical polishing is an important process flow in semiconductor production and manufacturing, and plays a crucial role in realizing global planarization of the surface of a wafer. The chemical mechanical polishing system generally includes two major modules, namely a polishing module, which softens the surface of the thin film by using fine polishing particles and various additives in polishing solution (slurry), and removes part or all of the thin film by mechanical friction, and after polishing, the surface of the wafer is usually cleaned primarily by using deionized water on a polishing table to remove the residue of the polishing solution and other surface particles; the cleaning module utilizes ultrasonic oscillation and chemical scrubbing to remove residual grinding particles and attachments in the grinding process, and the post-cleaning liquid chemicals generally have strong particle removing capacity.
Generally, the above steps can result in a smooth and clean wafer surface layer, but as the process steps are increasingly complicated, especially as some special processes are developed, the CMP particle residue increasingly affects the CMP quality and development. The novel point of the invention is that the cleaning liquid chemicals used for post-cleaning before are introduced into the grinding module, and on the basis of chemical action, the mechanical force of grinding is far greater than that of the cleaning brush of the post-cleaning unit, so that the capability of removing surface particles is greatly improved.
Disclosure of Invention
In view of the above problems, the present invention provides a method and an apparatus for polishing a semiconductor wafer, which can greatly reduce the number of residual polishing particles.
In a first aspect, the present invention provides a method for chemical mechanical polishing and cleaning a semiconductor wafer, comprising:
providing a wafer to be ground and carrying out chemical mechanical planarization grinding on the wafer to be ground;
supplying a first cleaning liquid, and regrinding the wafer after the planarization grinding;
and conveying the wafer after the re-grinding to a cleaning module, and cleaning after grinding.
Optionally, the regrinding is stopped with a set grinding time being reached.
Optionally, the first cleaning solution is acidic or alkaline.
Optionally, the step of cleaning the reground wafer comprises:
and conveying the wafer to a cleaning module, supplying a second cleaning solution to the cleaning module, and cleaning the wafer by adopting a cleaning brush.
Optionally, the first cleaning solution supplied in the regrinding process is the same as the second cleaning solution used for cleaning after the grinding of the cleaning module.
Optionally, the regrinding uses the same polishing platen as the planarizing polishing.
The semiconductor wafer grinding method of the invention supplies the first cleaning fluid to the grinding table after finishing the planarization grinding, and continues grinding the wafer, thereby effectively removing the residual massive particles on the surface of the wafer in the process of re-grinding. The semiconductor wafer grinding method of the invention can be realized by adopting the original grinding equipment without increasing the equipment cost.
In a second aspect, the present invention provides a chemical mechanical polishing and cleaning apparatus for a semiconductor wafer, comprising:
a grinding table;
the grinding fluid supply module is used for supplying grinding fluid to the grinding table;
and the cleaning liquid supply module is used for supplying a first cleaning liquid to the grinding table.
Optionally, the cleaning device further comprises a cleaning table, and the cleaning liquid supply module is further used for supplying a second cleaning liquid to the cleaning table.
Optionally, the cleaning device further comprises a cleaning brush, and the cleaning brush is used for being matched with the second cleaning solution to clean the wafer.
Optionally, the first cleaning solution is acidic or alkaline.
The invention provides a semiconductor wafer grinding device, which can supply a first cleaning fluid to a grinding table after finishing planarization grinding and continuously grind a wafer, thereby effectively removing residual massive particles on the surface of the wafer in the process of re-grinding. The semiconductor wafer grinding device of the invention adopts the original grinding equipment and can be realized without increasing the equipment cost.
Drawings
FIG. 1 is a flowchart of a semiconductor wafer polishing method according to an embodiment of the present invention;
FIG. 2 is a block diagram of a semiconductor wafer polishing apparatus according to another embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 1, the present embodiment provides a method for polishing a semiconductor wafer, comprising:
s1 supplying the polishing liquid to the polishing table and polishing the wafer to make the wafer flat;
s2, supplying a first cleaning fluid to the polishing table, and re-polishing the wafer after the planarization polishing; to remove the grinding particles remained on the surface of the wafer in the process of wafer planarization; optionally, the first regrinding is stopped with a set grinding time being reached.
S3 transfers the re-polished wafer to a cleaning table and cleans it.
In this embodiment, a wafer is first planarized and polished on a polishing table by using a polishing solution, the polishing process is the same as the conventional planarization polishing process, the polishing solution is added on the polishing table, and the wafer is polished by using the friction action between the polishing head and the polishing table, so as to achieve the purposes of removing the surface film layer of the wafer and planarizing the surface of the wafer.
After the planarization polishing is finished, the first cleaning solution is supplied to the polishing table, and the wafer is continuously polished, so that the large particles remained on the surface of the wafer in the planarization polishing process can be effectively removed.
After step S2, optionally after regrinding, a cleaning step is further included:
and transferring the wafer to a cleaning table, supplying a second cleaning solution to the cleaning table, and cleaning the wafer by adopting a cleaning brush.
After step S2, the bulk particles on the wafer surface are removed, and only a small portion of the remaining particles remain, and the wafer is transferred to a cleaning station for cleaning. And supplying a second cleaning solution to the cleaning table, and cleaning the surface of the wafer by using the cleaning brush to remove residual small particles on the surface of the wafer.
In step S1, optionally, the planarization polishing process is stopped after the barrier layer of the wafer is removed. In step S1, the first cleaning liquid supplied may be the same as the second cleaning liquid supplied to the wash station or may be different from the second cleaning liquid supplied to the wash station. Preferably, the first cleaning liquid used for regrinding is the same as the second cleaning liquid supplied on the cleaning table, so that the original cleaning liquid supply module can be directly adopted to supply the second cleaning liquid when the equipment is modified, and the modification is more convenient. The re-polishing may be performed on a planarizing polishing table, or may be performed on a separate polishing table. Preferably, the regrinding is carried out by using a flattened grinding table, so that an additional grinding table is not occupied, the transfer step between two times of grinding is reduced, and the equipment cost and the process cost are reduced.
In the planarization polishing process, the above embodiment employs stopping polishing after removing the barrier layer, following the existing polishing method. Grinding can also be stopped after other structural layers needing to be removed are completely removed or partially removed according to the needs.
In step S2, optionally, the first cleaning solution is acidic or alkaline.
Optionally, the first cleaning solution is a trimethyl ammonium hydroxide solution.
The following is a detailed description of the chemical mechanical polishing process of Cu:
the chemical used for chemical polishing is diluted trimethyl ammonium hydroxide.
Since the polishing chemical (i.e., the first cleaning liquid) and the cleaning chemical (i.e., the second cleaning liquid) used in the present invention are the same and the dilution ratio is maintained between both sides, the chemicals are diluted on the polishing platen through the spare polishing liquid supply line.
The chemical grinding is started after the barrier layer is removed, so that efficiency optimization can be realized, and the specific implementation steps are as follows:
firstly, polishing a wafer by using a polishing solution under the condition that a film on the surface of the wafer is removed and flattened by the chemical action of the polishing solution and the friction action of the polishing pad and a polishing head on a polishing platform attached with a polishing pad.
And step two, re-grinding is carried out, wherein the grinding condition is that on the grinding platform attached with the grinding pad, the chemical action of the first cleaning solution and the friction action of the grinding pad and the grinding head are used for removing the particles of the residual grinding fluid on the surface of the wafer.
Step three, cleaning the wafer, transferring the wafer to a cleaning table, and removing residual particles and attachments after the wafer is ground by using the cleaning brush and a second cleaning solution
In the semiconductor wafer polishing method of the embodiment, after the planarization polishing is completed, the first cleaning solution is supplied to the polishing table, and the wafer is continuously polished, so that the large particles remaining on the surface of the wafer can be effectively removed in the re-polishing process. The semiconductor wafer grinding method of the embodiment adopts the original grinding equipment, and can be realized without increasing the equipment cost.
Example 2
The present embodiment provides a semiconductor wafer polishing apparatus, comprising:
a grinding table;
the grinding fluid supply module is used for supplying grinding fluid to the grinding table;
and the cleaning liquid supply module is used for supplying a first cleaning liquid to the grinding table.
In this embodiment, the semiconductor wafer polishing method in embodiment 1 can be implemented by modifying an existing polishing apparatus. Because a plurality of grinding fluid supply pipelines are usually communicated with the grinding fluid supply module on the grinding table, but only one grinding fluid supply pipeline is needed in the grinding process, one grinding fluid supply pipeline can be modified in the embodiment, so that the cleaning fluid supply module can be communicated with the grinding table. During use, the first cleaning liquid in the cleaning liquid supply module is supplied to the grinding table through the pipeline. Of course, other pipelines can be used to communicate the cleaning solution module with the grinding table.
Optionally, the cleaning device further comprises a cleaning table, and the cleaning liquid supply module is further used for supplying a second cleaning liquid to the cleaning table.
In the present embodiment, the cleaning solution is used to clean the polished wafer, and the cleaning solution supply module connected to the cleaning table and the cleaning solution supply module supplied to the polishing table are the same module.
Optionally, the cleaning device further comprises a cleaning brush, and the cleaning brush is used for being matched with the second cleaning solution to clean the wafer.
Optionally, the first cleaning solution is acidic or alkaline.
In the semiconductor wafer polishing apparatus of the present embodiment, after the planarization polishing is completed, the first cleaning solution is supplied to the polishing table, and the wafer is continuously polished, so that the large particles remaining on the surface of the wafer can be effectively removed in the re-polishing process. The semiconductor wafer grinding device of the embodiment adopts the original grinding equipment, and can be realized without increasing the equipment cost.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A chemical mechanical polishing and cleaning method for semiconductor wafers is characterized in that: the method comprises the following steps:
providing a wafer to be ground and carrying out chemical mechanical planarization grinding on the wafer to be ground;
supplying a first cleaning liquid, and regrinding the wafer after the planarization grinding;
and conveying the wafer after the re-grinding to a cleaning module, and cleaning after grinding.
2. A method for chemical mechanical polishing and cleaning of a semiconductor wafer as recited in claim 1, wherein: the regrinding is stopped when a set grinding time is reached.
3. A method for chemical mechanical polishing and cleaning of a semiconductor wafer as recited in claim 1, wherein: the first cleaning solution is acidic or alkaline.
4. A method for chemical mechanical polishing and cleaning of a semiconductor wafer as recited in claim 1, wherein: the step of cleaning the reground wafer includes:
and conveying the wafer to a cleaning module, supplying a second cleaning solution to the cleaning module, and cleaning the wafer by adopting a cleaning brush.
5. A method for chemical mechanical polishing and cleaning of a semiconductor wafer as recited in claim 4, wherein: and the first cleaning liquid supplied in the regrinding process is the same as the second cleaning liquid used for cleaning the cleaning module after grinding.
6. A method for chemical mechanical polishing and cleaning of a semiconductor wafer as recited in claim 1, wherein: the regrinding is the same polishing platen as the planarizing polish.
7. A chemical mechanical polishing and cleaning device for semiconductor wafers is characterized in that: the method comprises the following steps:
a grinding table;
the grinding fluid supply module is used for supplying grinding fluid to the grinding table;
and the cleaning liquid supply module is used for supplying a first cleaning liquid to the grinding table.
8. A semiconductor wafer chemical mechanical polishing and cleaning apparatus as recited in claim 7, wherein: the cleaning device also comprises a cleaning platform, and the cleaning liquid supply module is also used for supplying a second cleaning liquid to the cleaning platform.
9. A semiconductor wafer chemical mechanical polishing and cleaning apparatus as recited in claim 8, wherein: the cleaning brush is used for being matched with the second cleaning solution to clean the wafer.
10. A semiconductor wafer chemical mechanical polishing and cleaning apparatus as recited in claim 7, wherein: the first cleaning solution is acidic or alkaline.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010325472.XA CN111360686A (en) | 2020-04-23 | 2020-04-23 | Chemical mechanical polishing and cleaning method and device for semiconductor wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010325472.XA CN111360686A (en) | 2020-04-23 | 2020-04-23 | Chemical mechanical polishing and cleaning method and device for semiconductor wafer |
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| CN111360686A true CN111360686A (en) | 2020-07-03 |
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| CN202010325472.XA Pending CN111360686A (en) | 2020-04-23 | 2020-04-23 | Chemical mechanical polishing and cleaning method and device for semiconductor wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118315261A (en) * | 2024-03-22 | 2024-07-09 | 珠海市板明科技有限公司 | Wafer cleaning method |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1947945A (en) * | 2005-10-14 | 2007-04-18 | 联华电子股份有限公司 | Equipment for chemical-mechanical polishing, method for washing its polishing pad and flattening method |
| CN101359578A (en) * | 2007-08-05 | 2009-02-04 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning method and apparatus |
| CN202174489U (en) * | 2011-08-12 | 2012-03-28 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning device and chemical mechanical lapping device |
| CN203993507U (en) * | 2014-08-22 | 2014-12-10 | 中芯国际集成电路制造(北京)有限公司 | A kind of wafer cleaning burnishing device |
| CN104742007A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(北京)有限公司 | Chemical mechanical grinding device and chemical mechanical grinding method |
| US20160083676A1 (en) * | 2014-09-18 | 2016-03-24 | Applied Materials, Inc. | Method and apparatus for high efficiency post cmp clean using engineered viscous fluid |
| US10065288B2 (en) * | 2012-02-14 | 2018-09-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing (CMP) platform for local profile control |
| CN110900455A (en) * | 2018-09-17 | 2020-03-24 | 长鑫存储技术有限公司 | Wafer cleaning solution, chemical mechanical polishing post-cleaning method and wafer |
-
2020
- 2020-04-23 CN CN202010325472.XA patent/CN111360686A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1947945A (en) * | 2005-10-14 | 2007-04-18 | 联华电子股份有限公司 | Equipment for chemical-mechanical polishing, method for washing its polishing pad and flattening method |
| CN101359578A (en) * | 2007-08-05 | 2009-02-04 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning method and apparatus |
| CN202174489U (en) * | 2011-08-12 | 2012-03-28 | 中芯国际集成电路制造(上海)有限公司 | Wafer cleaning device and chemical mechanical lapping device |
| US10065288B2 (en) * | 2012-02-14 | 2018-09-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing (CMP) platform for local profile control |
| CN104742007A (en) * | 2013-12-30 | 2015-07-01 | 中芯国际集成电路制造(北京)有限公司 | Chemical mechanical grinding device and chemical mechanical grinding method |
| CN203993507U (en) * | 2014-08-22 | 2014-12-10 | 中芯国际集成电路制造(北京)有限公司 | A kind of wafer cleaning burnishing device |
| US20160083676A1 (en) * | 2014-09-18 | 2016-03-24 | Applied Materials, Inc. | Method and apparatus for high efficiency post cmp clean using engineered viscous fluid |
| CN110900455A (en) * | 2018-09-17 | 2020-03-24 | 长鑫存储技术有限公司 | Wafer cleaning solution, chemical mechanical polishing post-cleaning method and wafer |
Non-Patent Citations (1)
| Title |
|---|
| 周海: "《衬底基片超精密加工技术》", 30 November 2014, 科学出版社 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118315261A (en) * | 2024-03-22 | 2024-07-09 | 珠海市板明科技有限公司 | Wafer cleaning method |
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Application publication date: 20200703 |