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CN111354877A - Preparation method of OLED hybrid light-emitting panel and light-emitting panel - Google Patents

Preparation method of OLED hybrid light-emitting panel and light-emitting panel Download PDF

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CN111354877A
CN111354877A CN202010165680.8A CN202010165680A CN111354877A CN 111354877 A CN111354877 A CN 111354877A CN 202010165680 A CN202010165680 A CN 202010165680A CN 111354877 A CN111354877 A CN 111354877A
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layer
electrode
light
back plate
forming
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CN111354877B (en
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邹建华
陶洪
徐苗
刘文聪
王磊
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Guang Zhou New Vision Opto Electronic Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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Abstract

The invention discloses a preparation method of an OLED hybrid light-emitting panel and a light-emitting panel. The method for producing a light-emitting panel includes: forming an LED electrode, a first lap electrode and a second lap electrode on the driving back plate; forming a protective layer on the driving back plate and removing the protective layer positioned in the blue sub-pixel area, wherein the protective layer completely covers the first lapping electrode and the second lapping electrode; transferring the blue LED chip to a driving back plate and correspondingly electrically connecting the blue LED chip with the LED electrode; removing the protective layer; forming a flat layer on the driving back plate and removing part of the flat layer to expose the blue LED chip, a part of the first lapping electrode and a part of the second lapping electrode; and forming a green organic light-emitting device and a red organic light-emitting device on the surface of the flat layer on the side far away from the driving back plate. The invention improves the manufacturing efficiency of the light-emitting panel, improves the problem of full-color display deviation, and prevents the light-emitting panel from being damaged in the process of transferring the LED chip.

Description

Preparation method of OLED hybrid light-emitting panel and light-emitting panel
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a preparation method of an OLED hybrid light-emitting panel and the light-emitting panel.
Background
The Micro-LED display technology has the advantages of low power consumption, high brightness, high color saturation, fast response speed, long service life, high efficiency, etc., and is considered to be the most competitive next generation display technology.
Currently, the core technology of Micro-LEDs is facing major breakthrough in the display field, but many problems still remain to be solved in industrialization, such as miniaturization and array, chip mass transfer and color conversion, detection and repair, etc. After the LED chip is miniaturized, the chip efficiency and uniformity are significantly reduced, and in the Micro-LED colorization scheme, a huge transfer scheme is generally selected to transfer and paste red, blue and green grains in turn to realize full colorization, which requires transferring and embedding millions or even tens of millions of LED grains. Therefore, micro LEDs show high requirements for the efficiency, wavelength uniformity, and mass transfer and yield and tact of LED dies. The above problem, especially the color and efficiency difference between different LED chips and the same LED chip under different driving currents, finally results in the deviation problem of full-color display of LED pixels.
Disclosure of Invention
In view of the above, the present invention provides a method for manufacturing an OLED hybrid light-emitting panel and a light-emitting panel, so as to improve the manufacturing efficiency of the light-emitting panel, improve the problem of full-color display deviation, and prevent the light-emitting panel from being damaged in the process of transferring LED chips.
In order to achieve the purpose, the invention adopts the following technical scheme:
in one aspect, an embodiment of the present invention provides a method for preparing an OLED hybrid light-emitting panel, including:
forming an LED electrode, a first lapping electrode and a second lapping electrode on the driving back plate, wherein the LED electrode is positioned in the blue sub-pixel area, the first lapping electrode is positioned in the green sub-pixel area, and the second lapping electrode is positioned in the red sub-pixel area;
forming a protective layer on the driving back plate and removing the protective layer positioned in the blue sub-pixel area, wherein the protective layer completely covers the first lapping electrode and the second lapping electrode;
transferring a blue LED chip to the driving back plate and correspondingly and electrically connecting the blue LED chip with the LED electrode;
removing the protective layer;
forming a flat layer on the driving back plate and removing part of the flat layer to expose the blue LED chip, a part of the first lapping electrode and a part of the second lapping electrode;
and forming a green light organic light emitting device and a red light organic light emitting device on the surface of one side of the flat layer, which is far away from the driving back plate, wherein the green light organic light emitting device is electrically connected with the exposed first lapping electrode, and the red light organic light emitting device is electrically connected with the exposed second lapping electrode.
Optionally, forming an LED electrode, a first strap electrode and a second strap electrode on the driving backplane comprises:
sputtering a metal layer on the driving backboard;
and patterning the metal layer by adopting a photoetching process to form the LED electrode, the first lapping electrode and the second lapping electrode.
Optionally, the material of the metal layer comprises at least one of nickel, copper and gold.
Optionally, forming a protection layer on the driving backplane and removing the protection layer located in the blue sub-pixel region, where the protection layer completely covers the first overlapping electrode and the second overlapping electrode, includes:
spin-coating photoresist on the driving back plate to cover the LED electrode, the first lapping electrode and the second lapping electrode;
and exposing and developing the photoresist positioned in the blue sub-pixel area, and removing the photoresist positioned in the blue sub-pixel area.
Optionally, forming a planarization layer on the driving backplane and removing a portion of the planarization layer to expose the blue LED chip, a portion of the first overlapping electrode, and a portion of the second overlapping electrode, includes:
forming an organic material on the driving backboard until the thickness of the formed organic layer is greater than or equal to the distance from the surface of the blue LED chip far away from the driving backboard to the driving backboard;
standing for more than 5s, and drying the organic layer to form the flat layer;
and etching the flat layer by adopting a photoetching process to expose the blue LED chip, a part of the first lapping electrode and a part of the second lapping electrode.
Optionally, forming a green organic light emitting device and a red organic light emitting device on a surface of the planarization layer on a side away from the driving backplane includes:
forming a first reflection electrode in a green sub-pixel area on the surface of the flat layer, which is far away from one side of the driving back plate, and forming a second reflection electrode and an optical adjusting layer which are stacked in a red sub-pixel area, wherein the first reflection electrode is electrically connected with the exposed first lapping electrode, and the second reflection electrode is electrically connected with the exposed second lapping electrode;
forming a pixel defining layer to define a blue light emitting region, a green light emitting region and a red light emitting region;
sequentially forming a whole layer of yellow light emitting functional layer and a whole layer of cathode layer, wherein the yellow light emitting functional layer at least comprises a light emitting layer;
the distance H from the geometric center of the light-emitting layer to the first reflecting electrode and the thickness Y of the optical adjusting layer satisfy the following relation:
Figure BDA0002407375360000041
Figure BDA0002407375360000042
wherein,gat the central wavelength of green light, λrIs the central wavelength of red light; thetagTheta is the sum of the phase shifts of the green light reflected from the surfaces of the first reflective electrode and the cathode layerrIs the sum of the reflected phase shifts of the red light at the second reflective electrode and the cathode layer surface; m is a modulus; n isgIs made of a material selected from the light emitting layer to the first reflective electrode at λgAverage refractive index ofrIs made of a material selected from the luminescent layer to the second reflective electrode at λrAverage refractive index ofYIs the refractive index of the optically modifying layer.
Optionally, forming a first reflective electrode in a green sub-pixel region of a surface of the planarization layer on a side away from the driving backplane, and forming a second reflective electrode and an optical adjustment layer stacked in a red sub-pixel region, includes:
forming a reflecting electrode layer on the surface of one side of the flat layer, which is far away from the driving back plate, wherein the reflecting electrode layer is a composite electrode layer comprising a silver layer, an aluminum layer or a molybdenum layer;
patterning the reflective electrode layer, etching away the reflective electrode layer outside the red sub-pixel region and the green sub-pixel region, and forming the first reflective electrode and the second reflective electrode;
forming a transparent conductive layer on one side of the reflecting electrode layer far away from the driving back plate;
and patterning the transparent conducting layer, and etching the transparent conducting layer outside the red sub-pixel area to form the optical adjusting layer.
Optionally, forming a first reflective electrode in a green sub-pixel region of a surface of the planarization layer on a side away from the driving backplane, and forming a second reflective electrode and an optical adjustment layer stacked in a red sub-pixel region, includes:
forming a reflecting electrode layer on the surface of one side, away from the driving back plate, of the flat layer;
patterning the reflective electrode layer, etching away the reflective electrode layer outside the red sub-pixel region and the green sub-pixel region, and forming the first reflective electrode and the second reflective electrode;
forming a transparent non-conductive layer on one side of the reflecting electrode layer far away from the driving back plate, wherein the transparent non-conductive layer is made of an inorganic material;
patterning the transparent non-conductive layer, and etching off part of the transparent non-conductive layer in the red sub-pixel region;
forming a transparent conductive layer on one side of the transparent non-conductive layer away from the driving back plate;
and patterning the transparent conductive layer and the transparent non-conductive layer respectively, etching off the transparent conductive layer and the transparent non-conductive layer outside the red sub-pixel region, forming the optical adjusting layer by the residual transparent conductive layer and the transparent non-conductive layer, and electrically connecting the residual transparent conductive layer with the second reflecting electrode through the etching hole in the residual transparent non-conductive layer.
Optionally, forming a first reflective electrode in a green sub-pixel region of a surface of the planarization layer on a side away from the driving backplane, and forming a second reflective electrode and an optical adjustment layer stacked in a red sub-pixel region, includes:
forming a reflecting electrode layer and a transparent conducting layer which are sequentially stacked on the surface of one side, away from the driving back plate, of the flat layer;
etching away the transparent conductive layer outside the red sub-pixel area to form the optical adjusting layer;
and etching the reflective electrode layers outside the red sub-pixel area and the green sub-pixel area to form the first reflective electrode and the second reflective electrode.
In another aspect, an embodiment of the present invention provides a light-emitting panel, which is prepared by using the method for preparing an OLED hybrid light-emitting panel provided by the embodiment of the present invention, and the light-emitting panel includes:
driving the back plate;
the LED electrode, the first lapping electrode and the second lapping electrode are positioned on the driving back plate, the LED electrode is positioned in the blue sub-pixel area, the first lapping electrode is positioned in the green sub-pixel area, and the second lapping electrode is positioned in the red sub-pixel area;
the blue LED chip is positioned in the blue sub-pixel area and is correspondingly and electrically connected with the LED electrode;
the flat layer is positioned on the driving back plate and exposes the blue LED chip, a part of the first lapping electrode and a part of the second lapping electrode;
and the green light organic light emitting device and the red light organic light emitting device are positioned on the surface of one side of the flat layer, which is far away from the driving back plate, the green light organic light emitting device is electrically connected with the exposed first lapping electrode, and the red light organic light emitting device is electrically connected with the exposed second lapping electrode.
The invention has the beneficial effects that: according to the embodiment of the invention, the blue sub-pixel, the green sub-pixel and the red sub-pixel of the light-emitting panel are respectively formed by adopting the blue LED chip, the green organic light-emitting device and the red organic light-emitting device, and only the blue LED chip needs to be transferred in a large amount in the process of preparing the light-emitting panel; moreover, only the blue sub-pixel is prepared by adopting the LED chip, so that the problems of efficiency reduction and spectrum offset caused by the small-size LED chip are solved, the difficulty in white balance adjustment of the light-emitting panel is reduced, and the problem of full-color display deviation is solved; meanwhile, the blue light LED chip has longer service life compared with the blue light organic light emitting device, so the blue light LED chip is adopted to replace the blue light organic light emitting device, and the display service life is prolonged; moreover, because the red light LED chip is more complicated in preparation process and higher in cost, and meanwhile, the efficiency of the red light LED chip with the inverted structure is not high (the red light LED chip with the forward structure cannot realize chip miniaturization), the red light sub-pixel is formed by adopting the red light organic light-emitting device, the efficiency of the light-emitting panel can be improved, and the cost is reduced; in addition, more importantly, in the technical scheme of the invention, before the blue LED chip is transferred to the blue sub-pixel area of the driving backboard, the protective layer covering other areas except the blue sub-pixel area is formed on the driving backboard, so that the damage to other areas in the process of transferring the blue LED chip is prevented, and the yield of the light-emitting panel is effectively improved.
Drawings
The above and other features and advantages of the present invention will become more apparent to those of ordinary skill in the art by describing in detail exemplary embodiments thereof with reference to the attached drawings, in which:
FIG. 1 is a schematic flow chart of a method for manufacturing an OLED hybrid light-emitting panel according to an embodiment of the present invention;
2-11 are schematic cross-sectional structures of light-emitting panels corresponding to main flow in the method for manufacturing the OLED hybrid light-emitting panel provided by the embodiment of the invention;
FIG. 12 is an RGB spectrum of a light-emitting panel according to an embodiment of the present invention;
fig. 13 is an RGB spectrum diagram of another light-emitting panel according to an embodiment of the present invention.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
FIG. 1 is a schematic flow chart of a method for manufacturing an OLED hybrid light-emitting panel according to an embodiment of the present invention; fig. 2-10 are schematic cross-sectional structures of light-emitting panels corresponding to main processes in a method for manufacturing an OLED hybrid light-emitting panel according to an embodiment of the present invention. As shown in fig. 1, an embodiment of the present invention provides a method for preparing an OLED hybrid light-emitting panel, including:
step 110, forming an LED electrode, a first overlapping electrode and a second overlapping electrode on the driving backplane.
Referring to fig. 2, an LED electrode 21, a first tap electrode 22, and a second tap electrode 23 are formed on the driving back plate 1. The driving backplane may include a plurality of pixel driving circuits electrically connected to the LED electrode 21, the first overlapping electrode 22, and the second overlapping electrode 23, respectively. The LED electrode 21 is located in the blue sub-pixel region, the first overlapping electrode 22 is located in the green sub-pixel region, and the second overlapping electrode 23 is located in the red sub-pixel region. The LED electrode can comprise an LED anode or an LED cathode and is used for binding the LED chip with the vertical structure, and the LED electrode can also comprise an LED anode and an LED cathode simultaneously and is used for binding the LED chip with the inverted structure.
Alternatively, the LED electrode 21, the first tap electrode 22, and the second tap electrode 23 are formed on the driving back plate 1, including: sputtering a metal layer on the driving backboard 1; the metal layer is patterned using a photolithography process to form the LED electrode 21, the first landing electrode 22, and the second landing electrode 23.
Wherein the material of the metal layer may include at least one of nickel, copper, and gold.
Specifically, when the material of the metal layer is nickel, the sputtering power when sputtering the metal layer is 500W, and the sputtering time is 4min, so that a nickel layer with the thickness of 150nm can be obtained; in the photoetching process, the thickness of the spin-coated photoresist is 2um, the photoresist can adopt Rehong RZJ304 photoresist, the photoresist is exposed and developed, the exposure metering is 8mJ, spray development is adopted for 60s, and the exposed nickel layer is etched by using etching liquid to realize the patterning of the nickel layer, wherein the etching liquid can adopt HNO3/Acetic and the volume ratio is 1:1:1, and the etching is carried out for 30s at room temperature; and then, removing the photoresist by using a photoresist removing liquid at 50 ℃ for 2min, and then cleaning and drying to prepare the LED electrode 21, the first lap joint electrode 22 and the second lap joint electrode 23.
And 120, forming a protective layer on the driving back plate and removing the protective layer positioned in the blue sub-pixel area, wherein the protective layer completely covers the first overlapping electrode and the second overlapping electrode.
Exemplarily, referring to fig. 3, forming a protective layer 3 on the driving backplane 1 and removing the protective layer 3 located at the blue sub-pixel region, and the protective layer 3 completely covers the first and second landing electrodes 22 and 23, including: spin-coating photoresist on the driving back plate 1 to cover the LED electrode 21, the first overlapping electrode 22 and the second overlapping electrode 23; and exposing and developing the photoresist positioned in the blue sub-pixel area, and removing the photoresist positioned in the blue sub-pixel area.
Alternatively, the photoresist is a Ruihong RZJ304 photoresist, the thickness of the photoresist is 2um, the exposure dosage is 8mJ, and the shower type development is adopted for 60 s.
And step 130, transferring the blue LED chip to the driving back plate and correspondingly electrically connecting the blue LED chip with the LED electrode.
The embodiment can transfer the blue LED chip to the driving back plate, and fix the blue LED chip on the LED electrode according to the polarity of the electrode.
Illustratively, referring to fig. 4, the blue LED chip 41 may be an LED chip with a flip-chip structure, a plurality of blue LED chips 41 may be arranged on a sapphire substrate according to a preset arrangement, each blue LED chip 41 includes an anode and a cathode located on a surface of one side of the blue LED chip 41 away from the sapphire substrate, the blue LED chip 41 is transferred by a van der waals force method, the anode of the blue LED chip 41 is aligned with the LED anode of the LED electrode 21, the cathode of the blue LED chip 41 is aligned with the LED cathode of the LED electrode 21, then crystal fixing is performed by heat welding, the blue LED chip 41 is fixed, and then the sapphire substrate on the blue LED chip 41 is peeled off by laser.
In the process of transferring the blue LED chip 41 to the driving back plate 1, the structures of the first and second overlapping electrodes 22 and 23 located in other areas except the blue sub-pixel area are protected by the protection layer 3, and are not damaged when the blue LED chip 41 is transferred, so that the structure of the light-emitting panel can be effectively protected, and the yield of the light-emitting panel is improved.
And step 140, removing the protective layer.
Referring to fig. 5, based on the above steps, the protective layer is a photoresist protective layer, the light emitting panel with the blue LED chip 41 is placed in a stripping tank for stripping, a stripping solution at 50 ℃ is used for stripping for 2min, and then cleaning and drying are performed.
Step 150, forming a flat layer on the driving backplane and removing a portion of the flat layer to expose the blue LED chip, a portion of the first overlapping electrode, and a portion of the second overlapping electrode.
Referring to fig. 6, an organic material is formed on the driving backplane 1 until the thickness of the formed organic layer is greater than or equal to the distance from the surface of the blue LED chip 41 away from the driving backplane 1 to the driving backplane 1. Wherein, the organic material can be Dongli DL1000C, a 120KHz impact nozzle is adopted, the distance between the nozzle and the driving backboard 1 is controlled to be 60mm, the moving speed of the nozzle is 80mm/s, N2 is used as carrier gas, the gas pressure is 0.6psi, the line spacing is 4cm, the temperature of the driving backboard 1 is controlled to be 25 ℃, the ultrasonic power is 3W, the stirring power is 2W, and the flow is adjusted to be 0.4 ml/min. And (3) the mixture enters a vacuum oven to be vacuumized (the vacuum degree is about 1pa) and kept stand for more than 5s, so that gaps between the anode and the cathode of the blue LED chip 41LED are filled, the anode and the cathode of the blue LED chip 41LED can be effectively insulated, and the corresponding surface depression of the flat layer 5 can be prevented. The organic layer is then dried to form a flat layer 5, which is baked for example at 100 ℃ for 5Min to obtain a flat layer 5 having a thickness of 5 um. And etching the flat layer by adopting a photoetching process (a yellow light process) to expose the blue LED chip 41, a part of the first lapping electrode 22 and a part of the second lapping electrode 23, wherein the exposure dosage is 80mJ, and the spray type development is adopted for 60 s. Finally baking at 150 deg.C for 20 min.
And step 160, forming a green organic light-emitting device and a red organic light-emitting device on the surface of one side, away from the driving back plate, of the flat layer.
The green organic light emitting device is electrically connected with the exposed first lapping electrode, and the red organic light emitting device is electrically connected with the exposed second lapping electrode.
According to the embodiment of the invention, the blue sub-pixel, the green sub-pixel and the red sub-pixel of the light-emitting panel are respectively formed by adopting the blue LED chip, the green organic light-emitting device and the red organic light-emitting device, and only the blue LED chip needs to be transferred in a huge amount in the process of preparing the light-emitting panel, so that compared with the existing process of preparing the light-emitting panel which is completely formed by the LED chips, the invention greatly reduces the transferring amount and times of the LED chips by hybridizing the LED chips and the OLED devices, thereby improving the preparation efficiency and the yield of the light-emitting panel; moreover, only the blue sub-pixel is prepared by adopting the LED chip, so that the problems of efficiency reduction and spectrum offset caused by the small-size LED chip are solved, the difficulty in white balance adjustment of the light-emitting panel is reduced, and the problem of full-color display deviation is solved; meanwhile, the blue light LED chip has longer service life compared with the blue light organic light emitting device, so the blue light LED chip is adopted to replace the blue light organic light emitting device, and the display service life is prolonged; moreover, because the red light LED chip is more complicated in preparation process and higher in cost, and meanwhile, the efficiency of the red light LED chip with the inverted structure is not high (the red light LED chip with the forward structure cannot realize chip miniaturization), the red light sub-pixel is formed by adopting the red light organic light-emitting device, the efficiency of the light-emitting panel can be improved, and the cost is reduced; in addition, more importantly, in the technical scheme of the invention, before the blue LED chip is transferred to the blue sub-pixel area of the driving backboard, the protective layer covering other areas except the blue sub-pixel area is formed on the driving backboard, so that the damage to other areas in the process of transferring the blue LED chip is prevented, and the yield of the light-emitting panel is effectively improved.
In the above embodiment, the light emitting material of the green organic light emitting device may be a green light emitting material to directly emit green light, and the light emitting material of the red organic light emitting device may be a red light emitting material to directly emit red light. In a preferred embodiment, the luminescent materials of the green light organic luminescent device and the red light organic luminescent device are both yellow luminescent materials or mixed luminescent materials of the green light luminescent material and the red light luminescent material, green light and red light are respectively emitted by using a microcavity effect, so that a fine metal mask can be avoided, the preparation cost of the device is reduced, and large size is easy to realize; meanwhile, a color filter film is not needed, light loss after passing through the color filter film is avoided, and device efficiency is improved.
Exemplarily, referring to fig. 7 and 8, a first reflective electrode 421 is formed in a green sub-pixel region of a surface of the planarization layer 5 on a side away from the driving backplane 1, and a second reflective electrode 431 and an optical adjustment layer 432 are formed in a red sub-pixel region in a stacked manner, wherein the first reflective electrode 421 is electrically connected to the exposed first overlapping electrode 22, and the second reflective electrode 431 is electrically connected to the exposed second overlapping electrode 23. Referring to fig. 9, the pixel defining layer 6 is formed to define a blue light emitting region, a green light emitting region, and a red light emitting region. Referring to fig. 10 and 11, the green organic light emitting device 42 and the red organic light emitting device 43 are prepared by sequentially forming the entire yellow light emitting functional layer 44 and the entire cathode layer 45, wherein the yellow light emitting functional layer 44 includes at least a light emitting layer.
The distance H from the geometric center of the luminescent layer to the first reflecting electrode in the structure and the thickness Y of the optical adjusting layer satisfy the following relations:
Figure BDA0002407375360000121
Figure BDA0002407375360000122
wherein,gat the central wavelength of green light, λrIs the central wavelength of red light; thetagTheta is the sum of the phase shifts of the green light reflected from the surfaces of the first reflective electrode and the cathode layerrThe sum of the reflection phase shifts of the red light on the surfaces of the second reflecting electrode and the cathode layer; m is a modulus; n isgAll materials from the light-emitting layer to the first reflective electrode are at λgAverage refractive index ofrAll materials from the light-emitting layer to the second reflective electrode are at λrAverage refractive index ofYThe refractive index of the layer is optically adjusted.
In this embodiment, forming the first reflective electrode in the green sub-pixel region on the surface of the planarization layer on the side away from the driving backplane, and forming the second reflective electrode and the optical adjustment layer stacked in the red sub-pixel region may include:
forming a reflecting electrode layer on the surface of one side of the flat layer, which is far away from the driving back plate, wherein the reflecting electrode layer is a composite electrode layer comprising a silver layer, an aluminum layer or a molybdenum layer;
patterning the reflecting electrode layer, etching the reflecting electrode layer outside the red sub-pixel area and the green sub-pixel area to form a first reflecting electrode and a second reflecting electrode;
forming a transparent conductive layer on one side of the reflecting electrode layer far away from the driving back plate;
and patterning the transparent conductive layer, and etching off the transparent conductive layer outside the red sub-pixel region to form an optical adjusting layer.
Among them, the reflecting electrode layer is preferably a highly reflective composite electrode layer of Ag or Al, such as an ITO/Ag/ITO or Al/TiNx composite electrode layer. The material of the transparent conductive layer can be ITO, AZO and ZTO or a composite layer (such as ITO/AZO) of the materials. Therefore, the selectivity of the material can be increased, and the adjustment of the optical cavity length and the visual angle of the device are facilitated by obtaining the refractive index n values of various materials. The material of the optical adjustment layer 432 may be a composite layer of a transparent non-conductive material (SiO2, SiNx, SU8) and a conductive material (ITO, AZO, ZTO, graphene), such as SiNx/AZO, SiNx/graphene, where the transparent conductive material is located on a side of the transparent non-conductive material away from the driving backplane, and the transparent conductive material needs to be electrically connected to the second reflective electrode 431.
After the pixel defining layer is prepared, the driving backboard is transferred to an OLED evaporation chamber, and a hole injection layer, a hole transmission layer, an electron blocking layer, a light emitting layer (a yellow light emitting layer or a red and green light mixed light emitting layer), a hole blocking layer, an electron transmission layer and an electron injection layer are formed by evaporation in sequence through a first open mask. And evaporating a semitransparent cathode layer by adopting a second open mask, and connecting the cathode layer with the cathode of the blue LED chip through a peripheral lead wire to be used as a common electrode of the display screen. Optionally, an optical coupling layer (CPL) and an encapsulation layer (glass encapsulation or flexible film encapsulation may be used) are sequentially formed on the cathode layer.
Based on the technical scheme, in a specific embodiment of the invention, a PVD sputtering method is adopted to form a stacked structure of a first ito layer, a silver layer, and a second ito layer stacked in sequence on a surface of the planar layer on a side away from the driving backplane. Illustratively, the power of the ITO sputtering chamber is 850W, the sputtering time is 10s, the ITO sputtering chamber is switched to the Ag chamber, the power is 800W, the sputtering time is 4min, and the ITO sputtering chamber is switched to the power 850W, the sputtering time is 10 s. The stacked structure is patterned (a yellow light process may be used) to form a first reflective electrode and a second reflective electrode. And forming the AZO film by adopting an atomic layer deposition technology. Illustratively, using atomic layer deposition techniques, using diethyl zinc (DEZ) and Trimethylaluminum (TMA) electron-level purity and electron-level deionized water as the reaction source, a deposition temperature of 150 ℃ and a reaction chamber pressure of 0.25Torr resulted in a 68nm AZO film. And patterning the AZO film (yellow light process can be adopted) to form an optical adjusting layer. And then spin-coating Dongli DL1000C with the thickness of 2um, patterning by adopting a photoetching process, carrying out exposure metering of 45mj, carrying out spray-type development for 60S, and baking for 30min at the temperature of 150 ℃ to form a pixel defining layer. Then, evaporating organic materials HAT-CN (135nm)/NPB (20nm)/TCTA (10nm)/Bepp2, IrPPY3(30nm, 15%)/Bebq 2, Ir (piq)3(30nm, 3%)/Bebq 2(30nm) in sequence by adopting a first openmask to form a yellow light emitting functional layer; and then evaporating Mg, Ag (15nm)/NPB (60nm) in sequence by adopting a second openmask to form a green light organic light-emitting device and a red light organic light-emitting device. As can be seen from fig. 12, by the technical scheme of this embodiment, the half-peak width of the finally emitted RGB spectrum is small, the luminous intensity or brightness is large and uniform, and the color purity is effectively improved.
In another embodiment of the present invention, a first reflective electrode is formed in a green sub-pixel region of a surface of a planarization layer on a side away from a driving backplane, and a second reflective electrode and an optical adjustment layer are formed in a red sub-pixel region in a stack, including:
forming a reflecting electrode layer on the surface of one side of the flat layer, which is far away from the driving back plate;
patterning the reflecting electrode layer, etching the reflecting electrode layer outside the red sub-pixel area and the green sub-pixel area to form a first reflecting electrode and a second reflecting electrode;
forming a transparent non-conductive layer on one side of the reflecting electrode layer, which is far away from the driving back plate, wherein the transparent non-conductive layer is made of an inorganic material;
patterning the transparent non-conductive layer, and etching off part of the transparent non-conductive layer in the red sub-pixel region;
forming a transparent conductive layer on one side of the transparent non-conductive layer away from the driving back plate;
and patterning the transparent conductive layer and the transparent non-conductive layer respectively, etching off the transparent conductive layer and the transparent non-conductive layer outside the red sub-pixel region, forming an optical adjusting layer by the residual transparent conductive layer and the transparent non-conductive layer, and electrically connecting the residual transparent conductive layer with the second reflecting electrode through the etching hole in the residual transparent non-conductive layer.
The material of the reflective electrode layer can be Ag, Al, Mo or a composite electrode layer containing Ag, Al or Mo, preferably a highly reflective composite electrode layer of Ag or Al, such as an ITO/Ag/ITO or Al/TiNx composite electrode layer. The material of the transparent conductive layer can be ITO, AZO and ZTO or a composite layer (such as ITO/AZO) of the materials. The transparent non-conductive layer can be made of SiO2, SiNx or SU8, the transparent conductive layer can be made of ITO, AZO, ZTO or graphene, a composite layer formed by the transparent non-conductive layer and the transparent conductive layer forms an optical adjusting layer, the optical adjusting layer can be a composite layer formed by SiNx/AZO or SiNX/graphene and the like, the transparent conductive layer is located on one side, away from the driving back plate, of the transparent non-conductive layer, and the transparent conductive layer is electrically connected with the second reflecting electrode 431. Therefore, the inorganic material and the lower layer of the reflective electrode material have better etching selectivity, and after the transparent conductive layer is formed and when the transparent conductive layer outside the red sub-pixel area is etched, the transparent non-conductive layer below the transparent non-conductive layer can block the etching of the reflective electrode layer, so that the etching of the optical adjusting layer is facilitated.
In addition, in still another embodiment of the present invention, a method of forming a first reflective electrode in a green sub-pixel region of a surface of a planarization layer on a side away from a driving backplane, and forming a second reflective electrode and an optical adjustment layer stacked in a red sub-pixel region, includes:
forming a reflecting electrode layer and a transparent conducting layer which are sequentially stacked on the surface of one side, away from the driving back plate, of the flat layer;
etching away the transparent conductive layer outside the red sub-pixel region to form an optical adjusting layer;
and etching the reflective electrode layer outside the red sub-pixel area and the green sub-pixel area to form a first reflective electrode and a second reflective electrode.
Based on the above technical solution, in another specific embodiment of the present invention, a molybdenum layer and a third ito layer stacked in sequence are formed on the surface of the flat layer on the side away from the driving backplane; exemplarily, the Mo sputtering chamber power is 500W, the sputtering lasts 150s, and a 150nm Mo film is obtained; and transferring the ITO film into an ITO sputtering chamber to deposit the ITO film, wherein the power of the ITO sputtering chamber is 850W, and the time is 30s, so that the ITO film with the thickness of 45nm is obtained. Etching the third indium tin oxide layer outside the red sub-pixel region by adopting a wet etching process; illustratively, the third ito layer outside the red subpixel region is etched away using oxalic acid. Etching the molybdenum layer outside the red sub-pixel area and the green sub-pixel area by adopting a wet etching process; illustratively, the molybdenum layer outside the red sub-pixel region and the green sub-pixel region is etched away using a mixture of phosphoric acid, acetic acid, and nitric acid to form a first reflective electrode, a second reflective electrode, and an optical adjustment layer. And then spin-coating Dongli DL1000C with the thickness of 2um, patterning by adopting a photoetching process, carrying out exposure metering of 45mj, carrying out spray-type development for 60S, and baking for 30min at the temperature of 150 ℃ to form a pixel defining layer. Then, evaporating organic materials HAT-CN (117nm)/NPB (20nm)/TCTA (10nm)/Bepp2, IrPPY3(30nm, 15%)/Bebq 2, Ir (piq)3(30nm, 3%)/Bebq 2(30nm) in sequence by adopting a first open mask to form a yellow light-emitting functional layer; and then, evaporating Mg, Ag (15nm)/NPB (60nm) in sequence by adopting a second open mask to form a green light organic light-emitting device and a red light organic light-emitting device. As can be seen from fig. 13, according to the technical scheme of this embodiment, the half-peak width of the finally emitted RGB spectrum is small, the luminous intensity or brightness is large and uniform, and the color purity is effectively improved.
In addition, an embodiment of the present invention further provides a light emitting panel, which is prepared by using the method for preparing an OLED hybrid light emitting panel provided by the embodiment of the present invention, and referring to fig. 11, the light emitting panel includes:
a driving back plate 1;
the LED electrode 21, the first lapping electrode 22 and the second lapping electrode 23 are positioned on the driving back plate 1, the LED electrode 21 is positioned in the blue sub-pixel area, the first lapping electrode 22 is positioned in the green sub-pixel area, and the second lapping electrode 23 is positioned in the red sub-pixel area;
the blue LED chip 41 is positioned in the blue sub-pixel area and is correspondingly and electrically connected with the LED electrode 21;
a planarization layer 5 on the driving backplane 1 and exposing the blue LED chip 41, a portion of the first bonding electrode 22, and a portion of the second bonding electrode 23;
and the green organic light emitting device 42 and the red organic light emitting device 43 are positioned on the surface of the flat layer 5 at the side far away from the driving back plate 1, the green organic light emitting device 42 is electrically connected with the exposed first lap electrode 22, and the red organic light emitting device 43 is electrically connected with the exposed second lap electrode 23.
The luminescent panel provided by the embodiment is prepared by the preparation method of the OLED hybrid luminescent panel provided by any embodiment of the invention, and has corresponding functions and beneficial effects. For the content not described in detail in this embodiment, refer to the above embodiments.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims (10)

1. A method for preparing an OLED hybrid light-emitting panel is characterized by comprising the following steps:
forming an LED electrode, a first lapping electrode and a second lapping electrode on the driving back plate, wherein the LED electrode is positioned in the blue sub-pixel area, the first lapping electrode is positioned in the green sub-pixel area, and the second lapping electrode is positioned in the red sub-pixel area;
forming a protective layer on the driving back plate and removing the protective layer positioned in the blue sub-pixel area, wherein the protective layer completely covers the first lapping electrode and the second lapping electrode;
transferring a blue LED chip to the driving back plate and correspondingly and electrically connecting the blue LED chip with the LED electrode;
removing the protective layer;
forming a flat layer on the driving back plate and removing part of the flat layer to expose the blue LED chip, a part of the first lapping electrode and a part of the second lapping electrode;
and forming a green light organic light emitting device and a red light organic light emitting device on the surface of one side of the flat layer, which is far away from the driving back plate, wherein the green light organic light emitting device is electrically connected with the exposed first lapping electrode, and the red light organic light emitting device is electrically connected with the exposed second lapping electrode.
2. The method for preparing an OLED hybrid light-emitting panel according to claim 1, wherein forming the LED electrode, the first overlapping electrode and the second overlapping electrode on the driving back plate comprises:
sputtering a metal layer on the driving backboard;
and patterning the metal layer by adopting a photoetching process to form the LED electrode, the first lapping electrode and the second lapping electrode.
3. The method for preparing an OLED hybrid light-emitting panel according to claim 2, wherein the material of the metal layer comprises at least one of nickel, copper and gold.
4. The method for preparing an OLED hybrid light-emitting panel according to claim 1, wherein forming a protective layer on the driving backplane and removing the protective layer at the blue sub-pixel region, and the protective layer completely covers the first and second landing electrodes, comprises:
spin-coating photoresist on the driving back plate to cover the LED electrode, the first lapping electrode and the second lapping electrode;
and exposing and developing the photoresist positioned in the blue sub-pixel area, and removing the photoresist positioned in the blue sub-pixel area.
5. The method for preparing an OLED hybrid light-emitting panel according to claim 1, wherein forming a flat layer on the driving backplane and removing a portion of the flat layer to expose the blue LED chip, a portion of the first landing electrode and a portion of the second landing electrode comprises:
forming an organic material on the driving backboard until the thickness of the formed organic layer is greater than or equal to the distance from the surface of the blue LED chip far away from the driving backboard to the driving backboard;
standing for more than 5s, and drying the organic layer to form the flat layer;
and etching the flat layer by adopting a photoetching process to expose the blue LED chip, a part of the first lapping electrode and a part of the second lapping electrode.
6. The method for preparing the OLED hybrid light-emitting panel according to claim 1, wherein forming a green organic light-emitting device and a red organic light-emitting device on the surface of the flat layer on the side far away from the driving back plate comprises:
forming a first reflection electrode in a green sub-pixel area on the surface of the flat layer, which is far away from one side of the driving back plate, and forming a second reflection electrode and an optical adjusting layer which are stacked in a red sub-pixel area, wherein the first reflection electrode is electrically connected with the exposed first lapping electrode, and the second reflection electrode is electrically connected with the exposed second lapping electrode;
forming a pixel defining layer to define a blue light emitting region, a green light emitting region and a red light emitting region;
sequentially forming a whole layer of yellow light emitting functional layer and a whole layer of cathode layer, wherein the yellow light emitting functional layer at least comprises a light emitting layer;
the distance H between the light-emitting layer and the first reflecting electrode and the thickness Y of the optical adjusting layer satisfy the following relations:
Figure FDA0002407375350000031
Figure FDA0002407375350000032
wherein,gat the central wavelength of green light, λrIs the central wavelength of red light; thetagTheta is the sum of the phase shifts of the green light reflected from the surfaces of the first reflective electrode and the cathode layerrIs the sum of the reflected phase shifts of the red light at the second reflective electrode and the cathode layer surface; m is a modulus; n isgIs made of a material selected from the light emitting layer to the first reflective electrode at λgAverage refractive index ofrIs made of a material selected from the luminescent layer to the second reflective electrode at λrAverage refractive index ofYIs the refractive index of the optically modifying layer.
7. The method for preparing the OLED hybrid light-emitting panel according to claim 1, wherein a first reflective electrode is formed in a green sub-pixel region of the surface of the flat layer on the side far away from the driving back plate, and a second reflective electrode and an optical adjustment layer are stacked in a red sub-pixel region, and the method comprises the following steps:
forming a reflecting electrode layer on the surface of one side of the flat layer, which is far away from the driving back plate, wherein the reflecting electrode layer is a composite electrode layer comprising a silver layer, an aluminum layer or a molybdenum layer;
patterning the reflective electrode layer, etching away the reflective electrode layer outside the red sub-pixel region and the green sub-pixel region, and forming the first reflective electrode and the second reflective electrode;
forming a transparent conductive layer on one side of the reflecting electrode layer far away from the driving back plate;
and patterning the transparent conducting layer, and etching the transparent conducting layer outside the red sub-pixel area to form the optical adjusting layer.
8. The method for preparing the OLED hybrid light-emitting panel according to claim 7, wherein a first reflective electrode is formed in a green sub-pixel region of the surface of the flat layer on the side far away from the driving back plate, and a second reflective electrode and an optical adjustment layer are stacked in a red sub-pixel region, and the method comprises the following steps:
forming a reflecting electrode layer on the surface of one side, away from the driving back plate, of the flat layer;
patterning the reflective electrode layer, etching away the reflective electrode layer outside the red sub-pixel region and the green sub-pixel region, and forming the first reflective electrode and the second reflective electrode;
forming a transparent non-conductive layer on one side of the reflecting electrode layer far away from the driving back plate, wherein the transparent non-conductive layer is made of an inorganic material;
patterning the transparent non-conductive layer, and etching off part of the transparent non-conductive layer in the red sub-pixel region;
forming a transparent conductive layer on one side of the transparent non-conductive layer away from the driving back plate;
and patterning the transparent conductive layer and the transparent non-conductive layer respectively, etching off the transparent conductive layer and the transparent non-conductive layer outside the red sub-pixel region, forming the optical adjusting layer by the residual transparent conductive layer and the transparent non-conductive layer, and electrically connecting the residual transparent conductive layer with the second reflecting electrode through the etching hole in the residual transparent non-conductive layer.
9. The method for preparing the OLED hybrid light-emitting panel according to claim 6, wherein a first reflective electrode is formed in a green sub-pixel region of the surface of the flat layer on the side far away from the driving back plate, and a second reflective electrode and an optical adjustment layer are stacked in a red sub-pixel region, and the method comprises the following steps:
forming a reflecting electrode layer and a transparent conducting layer which are sequentially stacked on the surface of one side, away from the driving back plate, of the flat layer;
etching away the transparent conductive layer outside the red sub-pixel area to form the optical adjusting layer;
and etching the reflective electrode layers outside the red sub-pixel area and the green sub-pixel area to form the first reflective electrode and the second reflective electrode.
10. A light-emitting panel characterized by being produced by the production method of the OLED hybrid light-emitting panel according to any one of claims 1 to 9, the light-emitting panel comprising:
driving the back plate;
the LED electrode, the first lapping electrode and the second lapping electrode are positioned on the driving back plate, the LED electrode is positioned in the blue sub-pixel area, the first lapping electrode is positioned in the green sub-pixel area, and the second lapping electrode is positioned in the red sub-pixel area;
the blue LED chip is positioned in the blue sub-pixel area and is correspondingly and electrically connected with the LED electrode;
the flat layer is positioned on the driving back plate and exposes the blue LED chip, a part of the first lapping electrode and a part of the second lapping electrode;
and the green light organic light emitting device and the red light organic light emitting device are positioned on the surface of one side of the flat layer, which is far away from the driving back plate, the green light organic light emitting device is electrically connected with the exposed first lapping electrode, and the red light organic light emitting device is electrically connected with the exposed second lapping electrode.
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