CN111341798B - Sensing device and packaging method thereof - Google Patents
Sensing device and packaging method thereof Download PDFInfo
- Publication number
- CN111341798B CN111341798B CN202010295977.6A CN202010295977A CN111341798B CN 111341798 B CN111341798 B CN 111341798B CN 202010295977 A CN202010295977 A CN 202010295977A CN 111341798 B CN111341798 B CN 111341798B
- Authority
- CN
- China
- Prior art keywords
- layer
- metal grid
- grid structure
- mask layer
- photodiode chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 58
- 238000000151 deposition Methods 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 7
- 239000007769 metal material Substances 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000002207 thermal evaporation Methods 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 230000003667 anti-reflective effect Effects 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 13
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000010329 laser etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- -1 made of two elements Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention provides a sensing device and a packaging method thereof, wherein the method comprises the following steps: thinning the photodiode chip from the first surface of the photodiode chip, forming a laminated antireflection structure, forming a first mask layer, forming openings in the first mask layer to expose the stack anti-reflective structure, followed by forming a metal grid structure in the openings, then forming a patterned second mask layer, etching the first mask layer and the metal grid structure by using the second mask layer, forming a plurality of parallel-arranged grooves on each side wall of the metal grid structure, wherein the transverse width of each groove is larger than that of each side wall, then depositing a metal material in the grooves to form a plurality of bulges on each side wall of the metal grid structure, a color filter layer is then formed such that a plurality of the protrusions are embedded in the color filter layer, and a lens layer is then formed on the color filter layer.
Description
Technical Field
The present invention relates to the field of semiconductor packaging technology, and more particularly, to a sensing device and a packaging method thereof.
Background
The CMOS sensor adopts the most common CMOS process of a general semiconductor circuit, has the characteristics of high integration level, low power consumption, high speed, low cost, and the like, and has rapidly developed in the aspects of wide dynamics and low illumination in recent years. CMOS, which is a complementary metal oxide semiconductor, is a semiconductor mainly made of two elements, silicon and germanium, and achieves basic functions through negatively and positively charged transistors on CMOS. The currents generated by these two complementary effects can be recorded and interpreted as images by the processing chip.
Taking a Back-side Illumination (BSI) CMOS image sensor as an example, in an existing manufacturing process, a logic device, a pixel device, and a metal interconnection structure are formed in a semiconductor substrate, then a carrier wafer is used to bond with a front surface of the semiconductor substrate, so as to thin a Back surface of the semiconductor substrate, and further form a subsequent process of a CIS on a Back surface of the semiconductor substrate, for example, an anti-reflection film is formed on the Back surface of the semiconductor substrate of the pixel device, and further a color filter unit matrix is formed on a surface of the anti-reflection film, so how to improve stability of a color filter unit is a problem that people expect to solve.
Disclosure of Invention
The present invention is directed to overcome the above-mentioned deficiencies of the prior art and to provide a sensing device and a packaging method thereof.
In order to achieve the above object, the present invention provides a packaging method of an image sensor device, comprising the following steps:
(1) providing a photodiode chip, wherein the photodiode chip comprises a plurality of photosensitive units which are spaced from each other and an isolation structure which is positioned between the adjacent photosensitive units, the photodiode chip is provided with a first surface and a second surface which is opposite to the first surface, and the second surface of the photodiode chip is exposed out of the photosensitive units.
(2) And then thinning the photodiode chip from the first surface of the photodiode chip.
(3) And then forming a laminated antireflection structure on the first surface of the photodiode chip.
(4) Then, a first mask layer is formed on the laminated antireflection structure, an opening is formed in the first mask layer to expose the laminated antireflection structure, and then a metal grid structure is formed in the opening.
(5) And then forming a patterned second mask layer on the first mask layer and the metal grid structure, etching the first mask layer and the metal grid structure by using the second mask layer to form a plurality of parallel grooves on each side wall of the metal grid structure, wherein the transverse width of each groove is larger than that of each side wall, and then depositing a metal material in each groove to form a plurality of bulges on each side wall of the metal grid structure.
(6) And then removing the first mask layer and the second mask layer to form a groove in the metal grid structure, and forming a color filter layer in the groove so that the plurality of protrusions are embedded into the color filter layer.
(7) A lens layer is then formed on the color filter layer.
Preferably, the thickness of the photodiode chip after the thinning treatment is 50-100 micrometers.
Preferably, the laminated antireflection structure includes a first antireflection layer, a second antireflection layer and a third antireflection layer which are sequentially laminated on the photodiode chip, wherein a refractive index of the first antireflection layer is greater than a refractive index of the second antireflection layer, and a refractive index of the second antireflection layer is greater than a refractive index of the third antireflection layer.
Preferably, the material of the metal grid structure is one or more of copper, aluminum and tungsten, and the deposition mode of the metal grid structure is thermal evaporation, electron beam evaporation or magnetron sputtering.
Preferably, the height of the protrusion is 200-400 nm.
Preferably, the color filter layer is a resin material containing a dye.
The invention also provides an image sensing device which is formed by packaging by adopting the method.
Compared with the prior art, the invention has the following advantages:
in the preparation process of the image sensing device, a patterned second mask layer is formed on the first mask layer and the metal grid structure, the first mask layer and the metal grid structure are etched by utilizing the second mask layer, so that a plurality of parallel grooves are formed on each side wall of the metal grid structure, the transverse width of each groove is larger than the width of each side wall, then a metal material is deposited in each groove, a plurality of bulges are formed on each side wall of the metal grid structure, then the first mask layer and the second mask layer are removed, so that a groove is formed in the metal grid structure, a color filter layer is formed in the groove, so that the bulges are embedded into the color filter layer, in the image sensing device, the metal bulge structure is embedded into the corresponding color filter layer, the steadiness of the color filter layer is effectively improved, the color filter layer is prevented from expanding in the using process, and then the image sensing device can be ensured to be used under a high-temperature environment, so that the color filter layer can be inhibited from expanding, and the normal work of the image sensing device can be ensured.
Drawings
Fig. 1-6 are schematic structural diagrams illustrating a packaging process of an image sensor device according to an embodiment of the invention.
Detailed Description
The invention provides a packaging method of an image sensing device, which comprises the following steps:
(1) providing a photodiode chip, wherein the photodiode chip comprises a plurality of photosensitive units which are spaced from each other and an isolation structure which is positioned between the adjacent photosensitive units, the photodiode chip is provided with a first surface and a second surface which is opposite to the first surface, and the second surface of the photodiode chip is exposed out of the photosensitive units.
(2) And then thinning the photodiode chip from the first surface of the photodiode chip.
(3) And then forming a laminated antireflection structure on the first surface of the photodiode chip.
(4) Then, a first mask layer is formed on the laminated antireflection structure, an opening is formed in the first mask layer to expose the laminated antireflection structure, and then a metal grid structure is formed in the opening.
(5) And then forming a patterned second mask layer on the first mask layer and the metal grid structure, etching the first mask layer and the metal grid structure by using the second mask layer to form a plurality of parallel grooves on each side wall of the metal grid structure, wherein the transverse width of each groove is larger than that of each side wall, and then depositing a metal material in each groove to form a plurality of bulges on each side wall of the metal grid structure.
(6) And then removing the first mask layer and the second mask layer to form a groove in the metal grid structure, and forming a color filter layer in the groove so that the plurality of protrusions are embedded into the color filter layer.
(7) A lens layer is then formed on the color filter layer.
Further, the thickness of the photodiode chip after thinning treatment is 50-100 microns.
Further, the stromatolite antireflection structure is including range upon range of in proper order first antireflection layer, second antireflection layer and the third antireflection layer on the photodiode chip, wherein the refracting index of first antireflection layer is greater than the refracting index of second antireflection layer, the refracting index of second antireflection layer is greater than the refracting index of third antireflection layer.
Furthermore, the metal grid structure is made of one or more of copper, aluminum and tungsten, and the deposition mode of the metal grid structure is thermal evaporation, electron beam evaporation or magnetron sputtering.
Further, the height of the protrusion is 200-400 nm.
Further, the color filter layer is a resin material containing a dye.
The invention also provides an image sensing device which is formed by packaging by adopting the method.
The following describes in detail the structure schematic diagram of the image sensing device packaging process in fig. 1-6.
Referring to fig. 1, a photodiode chip 10 is provided, the photodiode chip 10 includes a plurality of spaced apart light sensing units 11 and an isolation structure 12 located between adjacent light sensing units, the photodiode chip 10 has a first surface and a second surface opposite to the first surface, and the light sensing units 11 are exposed from the second surface of the photodiode chip 10.
In the specific process of manufacturing the photodiode chip 10, a semiconductor substrate is provided, a photodiode photosensitive array region and a peripheral region are defined on the semiconductor substrate, a patterned photoresist layer is formed on the semiconductor substrate, an ion implantation process is performed with the photoresist layer as a mask, doped ions are implanted into the substrate to form a plurality of photosensitive cells 11, and then the photoresist layer is removed. And then, etching a groove in the peripheral area of the substrate by using a mask, and filling an insulating medium material to form a shallow trench isolation structure 12. The light sensing units 11 collect light and perform photoelectric conversion on the absorbed light, and the shallow trench isolation structure is used for preventing optical crosstalk between adjacent light sensing units 11.
The semiconductor base may be a silicon substrate, a germanium substrate, a silicon carbide substrate, a gallium arsenide substrate, gallium nitride, or other materials suitable for application to an image sensor, and may also be a silicon-on-insulator substrate, a germanium-on-insulator substrate, or an insulating substrate with an epitaxial layer.
The method further includes forming at least one dielectric layer (not shown) on the second surface of the photodiode chip 10, and then performing at least one metal interconnection process, forming a plurality of patterned metal layers on the dielectric layer on the surface of the light sensing unit 11 for electrically connecting the light sensing unit, wherein the plurality of patterned metal layers can increase the blocking effect of the scattered light, and prevent the ambient light from affecting the sensing effect of the light sensing unit 11.
Referring to fig. 2, the photodiode chip 10 is thinned from the first surface of the photodiode chip 10, and the thickness of the photodiode chip 10 after the thinning is 50 to 100 micrometers, more preferably, the thickness of the photodiode chip 10 after the thinning is 60 to 90 micrometers, and still more preferably, the thickness of the photodiode chip 10 after the thinning is 70 to 80 micrometers, so as to take sensitivity and yield into consideration.
Referring to fig. 3, a stacked anti-reflective structure is formed on the first surface of the photodiode chip 10, the laminated antireflection structure includes a first antireflection layer 21, a second antireflection layer 22, and a third antireflection layer 23 sequentially laminated on the photodiode chip, wherein the refractive index of the first anti-reflective layer 21 is greater than the refractive index of the second anti-reflective layer 22, the refractive index of the second anti-reflective layer 22 is greater than the refractive index 23 of the third anti-reflective layer, the refractive index of the first anti-reflection layer 21 is 2.1 to 2.3, the refractive index of the second anti-reflection layer 22 is 1.8 to 2.1, the refractive index of the third antireflection layer is 1.5-1.8, the first antireflection layer, the second antireflection layer and the third antireflection layer are made of one or more of silicon oxide, silicon nitride and silicon oxynitride, and the first antireflection layer, the second antireflection layer and the third antireflection layer are formed by deposition through a PECVD method. By the arrangement of the laminated structure, light reflection is effectively reduced, and the sensitivity of the photosensitive unit 11 is further improved.
Referring to fig. 4, a first mask layer 30 is formed on the stacked anti-reflective structure, an opening is formed in the first mask layer 30 to expose the stacked anti-reflective structure, and a metal grid structure 40 is formed in the opening, wherein the metal grid structure 40 is made of one or more of copper, aluminum and tungsten, and the metal grid structure is deposited by thermal evaporation, electron beam evaporation or magnetron sputtering. In a specific embodiment, a photoresist layer is first spin-coated on the stacked anti-reflective structure as a first mask layer 30, then an opening is formed in the photoresist layer through exposure, development and etching processes to expose the stacked anti-reflective structure 20, and then one or more of copper, aluminum and tungsten are deposited through thermal evaporation, electron beam evaporation or magnetron sputtering to obtain the metal grid structure 40. In addition, the first mask layer 30 may also be a dielectric material such as silicon nitride, silicon oxide, aluminum oxide, etc., and an opening is formed by a laser etching process.
Referring to fig. 5, which is a top view, a patterned second mask layer 50 is formed on the first mask layer 30 and the metal grid structure 40, the first mask layer 30 and the metal grid structure 40 are etched by using the second mask layer 50 to form a plurality of parallel trenches 41 on each sidewall of the metal grid structure 40, the lateral width of the trenches 41 is greater than the width of the sidewall, a metal material is deposited in the trenches 41, so that a plurality of protrusions 60 are formed on each sidewall of the metal grid structure 40, the height of the protrusions 60 is 200-. The material of the protrusion 60 is the same as that of the metal grid structure 40, and the trench 41 is formed by wet etching or dry etching, wherein the width of the trench is 100-300 nm, and more preferably, the width of the trench is 150-250 nm.
In a specific embodiment, a photoresist layer is spin-coated on the first mask layer 30 and the metal grid structure 40 to serve as a second mask layer 50, then an opening is formed in the photoresist layer through exposure, development and etching processes, the first mask layer 30 and the metal grid structure 40 are further etched by using the second mask layer 50 to form a plurality of parallel-arranged trenches 41 on each side wall of the metal grid structure 40, and then one or more of copper, aluminum and tungsten are deposited through thermal evaporation, electron beam evaporation or magnetron sputtering, so that a plurality of protrusions 60 are formed on each side wall of the metal grid structure 40. In addition, the second mask layer 50 may also be a dielectric material such as silicon nitride, silicon oxide, aluminum oxide, etc., and an opening is formed by a laser etching process.
Referring to fig. 6, which is a top view, the first mask layer and the second mask layer are removed to form a groove in the metal grid structure 40, a color filter layer 70 is formed in the groove, so that the plurality of protrusions 60 are embedded into the color filter layer 70, specifically, the color filter layer 70 is formed by spin-coating a material of the color filter layer, the color filter layer 70 is a resin material containing a dye, specifically, a photoresist material containing a dye, and then a lens layer 80 is formed on the color filter layer 70.
The invention also provides an image sensing device which is formed by packaging by adopting the method.
In the preparation process of the image sensing device, a patterned second mask layer is formed on the first mask layer and the metal grid structure, the first mask layer and the metal grid structure are etched by utilizing the second mask layer, so that a plurality of parallel grooves are formed on each side wall of the metal grid structure, the transverse width of each groove is larger than the width of each side wall, then a metal material is deposited in each groove, a plurality of bulges are formed on each side wall of the metal grid structure, then the first mask layer and the second mask layer are removed, so that a groove is formed in the metal grid structure, a color filter layer is formed in the groove, so that the bulges are embedded into the color filter layer, in the image sensing device, the metal bulge structure is embedded into the corresponding color filter layer, the steadiness of the color filter layer is effectively improved, the color filter layer is prevented from expanding in the using process, and then the image sensing device can be ensured to be used under a high-temperature environment, so that the color filter layer can be inhibited from expanding, and the normal work of the image sensing device can be ensured.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (6)
1. A packaging method of an image sensing device is characterized in that: the method comprises the following steps:
(1) providing a photodiode chip, wherein the photodiode chip comprises a plurality of light sensing units which are spaced from each other and an isolation structure which is positioned between the adjacent light sensing units, the photodiode chip is provided with a first surface and a second surface opposite to the first surface, and the second surface of the photodiode chip is exposed out of the light sensing units;
(2) then thinning the photodiode chip from the first surface of the photodiode chip;
(3) then, a laminated antireflection structure is formed on the first surface of the photodiode chip, wherein the laminated antireflection structure comprises a first antireflection layer, a second antireflection layer and a third antireflection layer which are sequentially laminated on the photodiode chip, the refractive index of the first antireflection layer is greater than that of the second antireflection layer, and the refractive index of the second antireflection layer is greater than that of the third antireflection layer;
(4) then forming a first mask layer on the laminated antireflection structure, forming an opening in the first mask layer to expose the laminated antireflection structure, and then forming a metal grid structure in the opening;
(5) then forming a patterned second mask layer on the first mask layer and the metal grid structure, etching the first mask layer and the metal grid structure by using the second mask layer to form a plurality of parallel grooves on each side wall of the metal grid structure, wherein the transverse width of each groove is larger than that of each side wall, and then depositing a metal material in each groove to form a plurality of bulges on each side wall of the metal grid structure;
(6) removing the first mask layer and the second mask layer to form a groove in the metal grid structure, and forming a color filter layer in the groove so that the plurality of protrusions are embedded into the color filter layer;
(7) a lens layer is then formed on the color filter layer.
2. The method of packaging an image sensing device according to claim 1, wherein: and the thickness of the photodiode chip is 50-100 microns after thinning treatment.
3. The method of packaging an image sensing device according to claim 1, wherein: the metal grid structure is made of one or more of copper, aluminum and tungsten, and the deposition mode of the metal grid structure is thermal evaporation, electron beam evaporation or magnetron sputtering.
4. The method of packaging an image sensing device according to claim 1, wherein: the height of the bump is 200-400 nm.
5. The method of packaging an image sensing device according to claim 1, wherein: the color filter layer is made of resin material containing dye.
6. An image sensing device prepared by the method of any one of claims 1 to 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010295977.6A CN111341798B (en) | 2020-04-15 | 2020-04-15 | Sensing device and packaging method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010295977.6A CN111341798B (en) | 2020-04-15 | 2020-04-15 | Sensing device and packaging method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111341798A CN111341798A (en) | 2020-06-26 |
| CN111341798B true CN111341798B (en) | 2022-08-05 |
Family
ID=71186678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010295977.6A Active CN111341798B (en) | 2020-04-15 | 2020-04-15 | Sensing device and packaging method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111341798B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114188496A (en) * | 2020-08-24 | 2022-03-15 | 北京芯海视界三维科技有限公司 | Method for manufacturing light conversion layer, light emitting device and electronic device |
| CN114093999A (en) * | 2020-08-24 | 2022-02-25 | 北京芯海视界三维科技有限公司 | Method and device for producing a light conversion layer |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105990384A (en) * | 2015-03-20 | 2016-10-05 | 台湾积体电路制造股份有限公司 | Composite grid structure to reduce crosstalk in back side illumination image sensors |
| TW201639135A (en) * | 2015-04-16 | 2016-11-01 | 台灣積體電路製造股份有限公司 | Back-side illumination (BSI) image sensor and method for forming thereof |
| CN107845652A (en) * | 2017-11-02 | 2018-03-27 | 德淮半导体有限公司 | A kind of imaging sensor and forming method thereof |
| CN108417595A (en) * | 2018-03-21 | 2018-08-17 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN109427831A (en) * | 2017-08-31 | 2019-03-05 | 台湾积体电路制造股份有限公司 | Image Sensor device |
| CN109560096A (en) * | 2018-11-15 | 2019-04-02 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140339615A1 (en) * | 2013-05-16 | 2014-11-20 | ViaEra Technologies Company Limited | Bsi cmos image sensor |
| KR20170128731A (en) * | 2016-05-13 | 2017-11-23 | 삼성전자주식회사 | Image sensor |
| CN107731860A (en) * | 2017-11-17 | 2018-02-23 | 德淮半导体有限公司 | A kind of back-illuminated cmos image sensors and forming method thereof |
| CN108321167A (en) * | 2018-04-04 | 2018-07-24 | 德淮半导体有限公司 | Imaging sensor and the method for forming imaging sensor |
-
2020
- 2020-04-15 CN CN202010295977.6A patent/CN111341798B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105990384A (en) * | 2015-03-20 | 2016-10-05 | 台湾积体电路制造股份有限公司 | Composite grid structure to reduce crosstalk in back side illumination image sensors |
| TW201639135A (en) * | 2015-04-16 | 2016-11-01 | 台灣積體電路製造股份有限公司 | Back-side illumination (BSI) image sensor and method for forming thereof |
| CN109427831A (en) * | 2017-08-31 | 2019-03-05 | 台湾积体电路制造股份有限公司 | Image Sensor device |
| CN107845652A (en) * | 2017-11-02 | 2018-03-27 | 德淮半导体有限公司 | A kind of imaging sensor and forming method thereof |
| CN108417595A (en) * | 2018-03-21 | 2018-08-17 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN109560096A (en) * | 2018-11-15 | 2019-04-02 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111341798A (en) | 2020-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7709872B2 (en) | Methods for fabricating image sensor devices | |
| US8283195B2 (en) | Method of manufacture of a backside illuminated image sensor | |
| TWI517368B (en) | Backside illuminated cmos image sensor and method for fabricating the same | |
| KR101489038B1 (en) | Methods and apparatus for an improved reflectivity optical grid for image sensors | |
| US20120153127A1 (en) | Image sensor with reduced crosstalk | |
| KR102699394B1 (en) | Backside structure for image sensor | |
| CN107240593B (en) | Stacked global exposure pixel unit structure and forming method thereof | |
| TWI760010B (en) | Image sensor, optical structure and methods of forming the same | |
| US20220367546A1 (en) | Photodetector using a buried gate electrode for a transfer transistor and methods of manufacturing the same | |
| CN111341798B (en) | Sensing device and packaging method thereof | |
| TWI476911B (en) | Method for increasing photodiode full well capacity | |
| CN105762160B (en) | Back-illuminated global pixel unit structure and preparation method thereof | |
| TWI820429B (en) | Semiconductor structure | |
| US11749700B2 (en) | Transparent refraction structure for an image sensor and methods of forming the same | |
| CN110061020B (en) | Image sensor, forming method and working method thereof | |
| CN108807449B (en) | Image sensor and forming method thereof | |
| US8652868B2 (en) | Implanting method for forming photodiode | |
| CN111370436B (en) | Sensor packaging structure and preparation method thereof | |
| CN111710686B (en) | Image sensor and forming method thereof | |
| US20240379704A1 (en) | Backside refraction layer for backside illuminated image sensor and methods of forming the same | |
| CN110137193B (en) | Image sensor, forming method and working method thereof | |
| WO2021131539A1 (en) | Semiconductor device and method for producing semiconductor device | |
| KR20110072518A (en) | Backside illumination image sensor and method for manufacturing the same | |
| CN118866915A (en) | Method for forming photoelectric sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20220721 Address after: 518000 2c508, West, building 2, SEG Science Park, No. 120, Zhenxing Road, Lichun community, Huaqiang North Street, Futian District, Shenzhen, Guangdong Applicant after: Shenzhen Yongnuo Electric Appliance Co.,Ltd. Address before: 250000 shop a-108, building 3, Wanxiang xintiansi District, Wangsheren street, Licheng District, Jinan City, Shandong Province Applicant before: Shandong Yanding Electronic Technology Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |