CN111313860A - Bulk acoustic wave resonator, filter and electronic device with protective structure layer - Google Patents
Bulk acoustic wave resonator, filter and electronic device with protective structure layer Download PDFInfo
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- CN111313860A CN111313860A CN201911198282.XA CN201911198282A CN111313860A CN 111313860 A CN111313860 A CN 111313860A CN 201911198282 A CN201911198282 A CN 201911198282A CN 111313860 A CN111313860 A CN 111313860A
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- 230000001681 protective effect Effects 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 238000002161 passivation Methods 0.000 description 5
- 238000004891 communication Methods 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006355 external stress Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a bulk acoustic wave resonator, comprising: a substrate; an acoustic mirror; a bottom electrode; a top electrode; a piezoelectric layer disposed between the bottom electrode and the top electrode. A first gap exists between a sandwich structure consisting of the bottom electrode, the top electrode and the piezoelectric layer and the upper surface of the substrate, and the first gap enables a main body resonance structure of the resonator to be free from contact with the substrate; a protective structure layer having a first portion and a second portion, the first portion being connected to the upper surface of the base, an outer end of the second portion being connected to an inner end of the first portion, the second portion extending above the piezoelectric layer along the piezoelectric layer and at least a portion of the second portion forming a second gap in a thickness direction with the piezoelectric layer, the second portion being spaced apart from the top electrode in a lateral direction; the second portion of the protective structure layer is discontinuously arranged in the circumferential direction of the resonator or has a through hole passing therethrough. The invention also discloses a filter with the resonator and electronic equipment with the filter or the resonator.
Description
Technical Field
The present invention relates to the field of semiconductors, and in particular, to a bulk acoustic wave resonator, a filter, and an electronic device having the resonator or the filter.
Background
Electronic devices have been widely used as basic elements of electronic equipment, and their application range includes mobile phones, automobiles, home electric appliances, and the like. In addition, technologies such as artificial intelligence, internet of things, 5G communication and the like which will change the world in the future still need to rely on electronic devices as a foundation.
Film Bulk Acoustic Resonator (FBAR, also called Bulk Acoustic Resonator, BAW for short) is playing an important role in the communication field as an important member of piezoelectric devices, especially FBAR filters have increasingly large market share in the field of radio frequency filters, FBARs have excellent characteristics of small size, high resonance frequency, high quality factor, large power capacity, good roll-off effect and the like, the filters gradually replace traditional Surface Acoustic Wave (SAW) filters and ceramic filters, play a great role in the radio frequency field of wireless communication, and the advantage of high sensitivity can also be applied to the sensing fields of biology, physics, medicine and the like.
The structural main body of the film bulk acoustic resonator is a sandwich structure consisting of an electrode, a piezoelectric film and an electrode, namely a layer of piezoelectric material is sandwiched between two metal electrode layers. By inputting a sinusoidal signal between the two electrodes, the FBAR converts the input electrical signal into mechanical resonance using the inverse piezoelectric effect, and converts the mechanical resonance into an electrical signal for output using the piezoelectric effect.
High frequency resonators with high quality factor and low dynamic impedance are preferred for integrated oscillators. In recent years, as the package size of the resonator is reduced, the frequency drift of the resonator caused by the influence of external stress is more serious, and the performance of the oscillator and the stability thereof are seriously influenced.
With the rapid development of integrated circuit technology, the frequency stability of FBAR resonators is increasingly important. In order to adapt to the trend of miniaturization, it is necessary to solve or alleviate the frequency stability problem of the FBAR resonator.
Disclosure of Invention
To alleviate or solve the above-mentioned problems in the prior art, the present invention proposes a bulk acoustic wave resonator whose frequency is not affected by external stress.
According to an aspect of an embodiment of the present invention, there is provided a bulk acoustic wave resonator including:
a substrate;
an acoustic mirror;
a bottom electrode having a bottom electrode pin;
a top electrode having a top electrode pin;
a piezoelectric layer disposed between the bottom electrode and the top electrode,
wherein:
a first gap exists between a sandwich structure consisting of the bottom electrode, the top electrode and the piezoelectric layer and the upper surface of the substrate, and the first gap enables a main resonance area formed by the bottom electrode, the piezoelectric layer and the top electrode of the resonator to be free from contact with the substrate;
a protective structure layer including a first portion connected to the upper surface of the base and a second portion whose outer end is connected to an inner end of the first portion, the second portion extending along the piezoelectric layer to above the piezoelectric layer with at least a portion of the second portion forming a second gap in a thickness direction with the piezoelectric layer, and the second portion being spaced apart from the top electrode in a lateral direction;
the second part of the protective structure layer is discontinuously arranged along the circumferential direction of the resonator or through holes passing through the second part exist.
Embodiments of the present invention also relate to a filter comprising the bulk acoustic wave resonator described above.
Embodiments of the invention also relate to an electronic device comprising a filter as described above or a resonator as described above.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout, and in which:
FIG. 1A is a schematic cross-sectional view (along the direction B-B of FIG. 1B or FIG. 1C) of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
figure 1B is a schematic top view of the bulk acoustic wave resonator of figure 1A, according to an exemplary embodiment of the present invention;
figure 1C is a schematic top view of the bulk acoustic wave resonator of figure 1A, according to an exemplary embodiment of the present invention;
FIG. 2A is a schematic cross-sectional view (along direction B-B of FIG. 2B) of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
figure 2B is a schematic top view of the bulk acoustic wave resonator of figure 2A, according to an exemplary embodiment of the present invention;
FIG. 2C is a schematic cross-sectional view (along the direction C-C of FIG. 2B) of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
FIG. 2D is a schematic cross-sectional view (along the line) of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
D-D direction of FIG. 2B);
FIG. 3 is a schematic cross-sectional view (similar to the direction B-B in FIG. 1B or FIG. 1C) of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
FIG. 4A is a schematic cross-sectional view (along direction B-B of FIG. 4B) of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
figure 4B is a schematic top view of the bulk acoustic wave resonator of figure 4A, according to an exemplary embodiment of the present invention;
fig. 5A to 5F are schematic top views of bulk acoustic wave resonators according to exemplary embodiments of the present invention, which respectively show different structural forms of the protective structure layer.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention.
Fig. 1A is a schematic cross-sectional view (along direction B-B of fig. 1B or fig. 1C) of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. Fig. 1B is a schematic top view of the bulk acoustic wave resonator of fig. 1A, according to an exemplary embodiment of the present invention. Fig. 1C is a schematic top view of the bulk acoustic wave resonator of fig. 1A, according to an exemplary embodiment of the present invention.
In fig. 1A-1C, the reference numerals denote the following:
101: substrates, e.g. silicon or the like
103: the cavity, or other acoustic mirror structures, e.g. Bragg reflector
105: a bottom electrode not in contact with the substrate 101 and having an air gap
107: the piezoelectric layer, the portion of the piezoelectric layer outside the bottom electrode (the portion within the main body resonance region) and the substrate 101 are not in contact with each other, and an air gap is present
109: top electrode
111: passivation layers, e.g. aluminium nitride (ALN), silicon nitride, etc
113: an air gap separating the bottom electrode 105 and the substrate 101, the piezoelectric layer 107 and the substrate 101, the guard structure 115 and the piezoelectric layer 107
115: the protection structure is composed of two parts: the portion connected to the substrate is a first portion 115a, and the portion that is free from connection to other layers is a second portion 115b, 115b being a suspended structure. The end point of the second portion is located between the bottom electrode and the top electrode in the horizontal direction. The material of the protection structure 115 may be a metal, such as gold, molybdenum, aluminum, etc., an alloy, or other materials. If the material is not easily oxidized, only one layer of the protection structure 115 is needed, and if the material is easily oxidized, a passivation layer should be added on the protection structure 115.
W1: the distance between the bottom electrode 105 and the top electrode 109. In the embodiment shown in fig. 1, the second end point (the inner end, in the present invention, the end or side near the center of the active area of the resonator is the inner end; correspondingly, the first end point is the outer end, in the present invention, the end or side far from the center of the active area of the resonator is the outer end) of the guard structure 115 is at a horizontal distance W from the top electrode 109 of 0< W ≦ W1. A specific range thereof is not more than 15 μm.
W2: the distance between the bottom electrode 105 and the end of the same side of the piezoelectric layer 107. The specific range is 3-50 μm:
h1: the distance between the guard structure 115 and the piezoelectric layer 107. The specific ranges are as follows:
optional
H2: the distance between the piezoelectric layer 107 and the base 101. The specific ranges are as follows:
optional
In the present invention, the numerical ranges mentioned may be, besides the end points, the median values between the end points or other values, and are within the protection scope of the present invention.
It is noted that in the embodiments of the present invention, the protection structure 115 is provided, but as can be understood by those skilled in the art, in the case where there is a gap between the main body resonance region of the resonator and the upper surface of the substrate, the protection structure 115 may not be provided. Here, the bulk resonance structure refers to a sandwich structure region of the resonator excluding the top and bottom electrode lead portions. In the present invention, the overlapping area of the bottom electrode, the piezoelectric layer, the top electrode, and the acoustic mirror in the thickness direction of the resonator constitutes an effective area of the resonator. In the present invention, the condition that a gap exists between the bulk resonator structure and the upper surface of the substrate means that a gap also exists between the bulk resonator structure and the upper surface of the substrate except for the effective region or the acoustic mirror region.
Because a gap is formed between the main body resonance structure of the sandwich structure of the resonator and the substrate, the frequency of the resonator is not influenced by the stress of the substrate. This contributes to the stability of the resonator frequency.
Under the condition that the protection structure 115 is arranged, if the resonator deforms during working, the protection structure 115 can limit the deformation amount of the resonator, so that the resonator is not easy to deform or break.
Fig. 1B and 1C respectively show the case where the electrode leads are arranged on different sides and the electrode leads are arranged on the same side.
In fig. 1B, the electrode pins 117 and 119 are located on different sides, and the protection structure 115 is divided into two parts. In fig. 1C, the electrode pins 117 and 119 are located on the same side, which is beneficial to the continuity of the protection structure, and the protection structure is a whole, so that the protection effect is better.
FIG. 2A is a schematic cross-sectional view (along the line) of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
In the direction B-B of fig. 2B). Fig. 2B is a schematic top view of the bulk acoustic wave resonator of fig. 2A, according to an exemplary embodiment of the invention. Fig. 2C and 2D are schematic cross-sectional views (along directions C-C and D-D of fig. 2B, respectively) of a bulk acoustic wave resonator according to further exemplary embodiments of the present invention.
In the embodiments shown in fig. 2A-2D and described subsequently, a passivation layer 116 is disposed on the protective structure 115. The material of the protective structure 115 may be, for example, molybdenum, and the material of the protective structure 115 may be the same as or different from the top electrode. The material of the passivation layer 116 may be the same as the material of the passivation layer 111, for example, AlN, or may be different.
In fig. 2A-2D, it can be seen that the protective structure 115 is located laterally outside the bottom electrode. This avoids an overlap of the inner end of the protective structure 115 and the bottom electrode in the thickness direction of the resonator, compared to the embodiment of fig. 1A, thus avoiding the formation of a small sandwich structure. In the embodiment shown in fig. 2A-2D, the protective structure 115 does not affect the performance of the resonator due to the additional sandwich structure.
Fig. 3 is a schematic cross-sectional view (similar to the direction B-B in fig. 1B or fig. 1C) of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. In order to further reduce the influence of the protective structure on the performance of the resonator, in fig. 3 a bottom electrode is arranged in projection in the thickness direction of the resonator, which bottom electrode is located within the acoustic mirror.
Fig. 4A is a schematic cross-sectional view (along direction B-B of fig. 4B) of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. Figure 4B is a schematic top view of the bulk acoustic wave resonator of figure 4A, according to an exemplary embodiment of the present invention.
As shown in fig. 4A-4B, the inner end of the second portion of the protective structure 115 is directly connected to the piezoelectric layer, so that the protective structure in the embodiment shown in fig. 4A and 4B is a semi-floating structure, as compared to the protective structure 115 in the previous embodiment being a floating structure.
In a further embodiment, as shown in fig. 4A, the connection of the inner end of the second portion of the protective structure 115 with the piezoelectric layer is located outside the edge of the bottom electrode in the lateral direction of the resonator.
In the embodiment shown in fig. 1A-4B, the second part of the protection structure layer is a continuous integral structure, in the manufacturing process, the releasing difficulty of the sacrificial layer with a long and narrow passage is large, and the self stress of the protection structure layer is not easy to release, so that the protection structure layer is easy to deform under the action of the self stress, and the gap between the protection structure layer and the main body resonance structure is not easy to control, and the attachment may be caused, or the gap is too large, so that the good protection effect on the main body resonance structure cannot be achieved, and therefore, the problems are solved by changing the shape and the distribution mode of the protection structure layer.
As shown in fig. 5A, holes may be drilled above the second portion of the protection structure, the holes may be square, triangular, trapezoidal, arc-shaped, or other shapes, and the size and number of the holes may be changed according to actual situations. Fig. 5A shows a rectangle.
As shown in fig. 5B, the first portion of the protection structure is a continuous structure, the second portion is a discontinuous structure, the discontinuous structure may be a rectangle, or a triangle, a trapezoid, an arc, or other shape, and finally a comb-shaped structure is formed, which is shown in fig. 5B as a rectangle.
As shown in fig. 5C, the protection structure is a separate structure, the first portion and the second portion of the protection structure are both separate structures, and the separate structure may be rectangular, or may be triangular, trapezoidal, arc-shaped, or other shapes.
Fig. 5C shows a rectangle.
As shown in fig. 5D, the protective structure may be disposed only in partial positions, such as only at the corners, on all or part of the edges, or a combination thereof, and may be a continuous structure or a separate structure. Fig. 5D is shown as disposed at the corners, with the structure being a discrete structure.
As shown in fig. 5E, the guard structure can be simplified, i.e., disposed only at the corners. The structure shown in fig. 5E may be used for a so-called semi-floating protective structure layer as shown in fig. 4A, for example, but may also be used for other types of protective structure layers.
In addition to simplifying the protective structure, the stability of the protective structure can also be increased by selecting a specific shape. As shown in fig. 5F, in top view, the individual protective structures are trapezoidal structures. For the protection structure layer shown in fig. 4A, the structure shown in fig. 5F can increase the stability of the protection structure layer and improve the shock absorption effect.
As can be appreciated by those skilled in the art, although in fig. 5A-5F the electrode pins are disposed on the same side, the guard structures of fig. 5A-5F may also be used in resonators in which the electrode pins are disposed on different sides.
As can be appreciated by those skilled in the art, bulk acoustic wave resonators according to the present invention can be used to form filters.
Based on the above, the invention provides the following technical scheme:
1. a bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode having a bottom electrode pin;
a top electrode having a top electrode pin;
a piezoelectric layer disposed between the bottom electrode and the top electrode,
wherein:
a first gap exists between a sandwich structure consisting of the bottom electrode, the top electrode and the piezoelectric layer and the upper surface of the substrate, and the first gap enables a main resonance area formed by the bottom electrode, the piezoelectric layer and the top electrode of the resonator to be free from contact with the substrate;
a protective structure layer including a first portion connected to the upper surface of the base and a second portion whose outer end is connected to an inner end of the first portion, the second portion extending along the piezoelectric layer to above the piezoelectric layer with at least a portion of the second portion forming a second gap in a thickness direction with the piezoelectric layer, and the second portion being spaced apart from the top electrode in a lateral direction;
the second part of the protective structure layer is discontinuously arranged along the circumferential direction of the resonator or through holes passing through the second part exist.
2. The resonator of claim 1, wherein:
the top electrode pin and the bottom electrode pin are positioned on opposite sides of the resonator in a transverse direction;
the protective structure layer is arranged along the periphery of the resonator active area and comprises a first circumferential portion and a second circumferential portion separated by a top electrode pin and a bottom electrode pin in the circumferential direction.
3. The resonator of claim 1, wherein:
the top electrode pin and the bottom electrode pin are positioned on the same side of the resonator in the transverse direction;
the protective structure layer is arranged along the periphery of the resonator effective area, and the top electrode pin and the bottom electrode pin are located at the notch of the protective structure layer in the circumferential direction in the top view of the resonator.
4. The resonator of claim 1, wherein:
the second gap extends over the entire portion of the second section, an inner end of the second section being spaced from the piezoelectric layer in a thickness direction of the resonator.
5. The resonator of claim 1, wherein:
the inner end of the second portion is contiguous with the piezoelectric layer.
6. The resonator of claim 5, wherein:
the inner end of the second portion and a projection of the bottom electrode in a thickness direction of the resonator are spaced apart from each other.
7. The resonator of claim 1, wherein:
the first gap is communicated with the second gap.
8. The resonator of claim 7, wherein:
the acoustic mirror is an acoustic mirror cavity, and the first gap is communicated with the acoustic mirror cavity.
9. The resonator of any of claims 1-8, wherein:
the second portion is provided with a plurality of through holes therethrough.
10. The resonator of claim 9, wherein:
the shape of the through hole is one or more of rectangle, triangle, trapezoid and circle.
11. The resonator of claim 9, wherein:
the plurality of through holes are arranged in a circumferential direction of the second portion.
12. The resonator of any of claims 1-8, wherein:
the second portion includes a plurality of discontinuities connected to the first portion, the plurality of discontinuities being spaced apart from one another in a circumferential direction of the second portion.
13. The resonator of claim 12, wherein:
the plurality of discontinuities form teeth connected to the first portion.
14. The resonator of any of claims 1-8, wherein:
the protective structure layer includes a plurality of sub-protective structures circumferentially spaced apart from one another.
15. The resonator of claim 14, wherein:
each sub-guard structure has a first sub-portion corresponding to the first portion and a second sub-portion corresponding to the second portion.
16. The resonator of claim 15, wherein:
the sub-protection structure is arranged at the corner of the effective area of the resonator; or
The sub-protection structure is disposed at a middle portion of an edge of the active region of the resonator.
17. The resonator of claim 16, wherein:
the width of the second sub-portion is less than the width of the first sub-portion.
18. The resonator of claim 17, wherein:
in a top view of the resonator, each sub-guard structure has a trapezoidal shape or a triangular shape with a large outer end and a small inner end of the sub-guard structure.
19. A filter comprising a bulk acoustic wave resonator according to any one of claims 1-18.
20. An electronic device comprising the filter of 19 or the bulk acoustic wave resonator of any one of claims 1-18.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (20)
1. A bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode having a bottom electrode pin;
a top electrode having a top electrode pin;
a piezoelectric layer disposed between the bottom electrode and the top electrode,
wherein:
a first gap exists between a sandwich structure consisting of the bottom electrode, the top electrode and the piezoelectric layer and the upper surface of the substrate, and the first gap enables a main body resonance structure formed by the bottom electrode, the piezoelectric layer and the top electrode of the resonator to be free from contact with the substrate;
a protective structure layer including a first portion connected to the upper surface of the base and a second portion whose outer end is connected to an inner end of the first portion, the second portion extending along the piezoelectric layer to above the piezoelectric layer with at least a portion of the second portion forming a second gap in a thickness direction with the piezoelectric layer, and the second portion being spaced apart from the top electrode in a lateral direction;
the second part of the protective structure layer is discontinuously arranged along the circumferential direction of the resonator or through holes passing through the second part exist.
2. The resonator of claim 1, wherein:
the top electrode pin and the bottom electrode pin are positioned on opposite sides of the resonator in a transverse direction;
the protective structure layer is arranged along the periphery of the resonator active area and comprises a first circumferential portion and a second circumferential portion separated by a top electrode pin and a bottom electrode pin in the circumferential direction.
3. The resonator of claim 1, wherein:
the top electrode pin and the bottom electrode pin are positioned on the same side of the resonator in the transverse direction;
the protective structure layer is arranged along the periphery of the resonator effective area, and the top electrode pin and the bottom electrode pin are located at the notch of the protective structure layer in the circumferential direction in the top view of the resonator.
4. The resonator of claim 1, wherein:
the second gap extends over the entire portion of the second section, an inner end of the second section being spaced from the piezoelectric layer in a thickness direction of the resonator.
5. The resonator of claim 1, wherein:
the inner end of the second portion is contiguous with the piezoelectric layer.
6. The resonator of claim 5, wherein:
the inner end of the second portion and a projection of the bottom electrode in a thickness direction of the resonator are spaced apart from each other.
7. The resonator of claim 1, wherein:
the first gap is communicated with the second gap.
8. The resonator of claim 7, wherein:
the acoustic mirror is an acoustic mirror cavity, and the first gap is communicated with the acoustic mirror cavity.
9. The resonator of any of claims 1-8, wherein:
the second portion is provided with a plurality of through holes therethrough.
10. The resonator of claim 9, wherein:
the shape of the through hole is one or more of rectangle, triangle, trapezoid and circle.
11. The resonator of claim 9, wherein:
the plurality of through holes are arranged in a circumferential direction of the second portion.
12. The resonator of any of claims 1-8, wherein:
the second portion includes a plurality of discontinuities connected to the first portion, the plurality of discontinuities being spaced apart from one another in a circumferential direction of the second portion.
13. The resonator of claim 12, wherein:
the plurality of discontinuities form teeth connected to the first portion.
14. The resonator of any of claims 1-8, wherein:
the protective structure layer includes a plurality of sub-protective structures circumferentially spaced apart from one another.
15. The resonator of claim 14, wherein:
each sub-guard structure has a first sub-portion corresponding to the first portion and a second sub-portion corresponding to the second portion.
16. The resonator of claim 15, wherein:
the sub-protection structure is arranged at the corner of the effective area of the resonator; or
The sub-protection structure is disposed at a middle portion of an edge of the active region of the resonator.
17. The resonator of claim 16, wherein:
the width of the second sub-portion is less than the width of the first sub-portion.
18. The resonator of claim 17, wherein:
in a top view of the resonator, each sub-guard structure has a trapezoidal shape or a triangular shape with a large outer end and a small inner end of the sub-guard structure.
19. A filter comprising the bulk acoustic wave resonator according to any one of claims 1-18.
20. An electronic device comprising the filter of claim 19 or the bulk acoustic wave resonator of any of claims 1-18.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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Citations (4)
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|---|---|---|---|---|
| US20170338799A1 (en) * | 2014-01-21 | 2017-11-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic wave resonator (fbar) having stress-relief |
| WO2019034442A1 (en) * | 2017-08-17 | 2019-02-21 | RF360 Europe GmbH | High q bulk acoustic resonator with dielectric flaps |
| CN109687835A (en) * | 2018-12-18 | 2019-04-26 | 开元通信技术（厦门）有限公司 | Thin film bulk acoustic wave resonator and preparation method thereof, filter |
| CN110504935A (en) * | 2018-05-17 | 2019-11-26 | 三星电机株式会社 | Bulk acoustic wave resonator and the method for manufacturing the bulk acoustic wave resonator |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170338799A1 (en) * | 2014-01-21 | 2017-11-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic wave resonator (fbar) having stress-relief |
| WO2019034442A1 (en) * | 2017-08-17 | 2019-02-21 | RF360 Europe GmbH | High q bulk acoustic resonator with dielectric flaps |
| CN110504935A (en) * | 2018-05-17 | 2019-11-26 | 三星电机株式会社 | Bulk acoustic wave resonator and the method for manufacturing the bulk acoustic wave resonator |
| CN109687835A (en) * | 2018-12-18 | 2019-04-26 | 开元通信技术（厦门）有限公司 | Thin film bulk acoustic wave resonator and preparation method thereof, filter |
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| CN111313860B (en) | 2023-05-12 |
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