CN111162058A - Gallium arsenide device metal protection ring - Google Patents
Gallium arsenide device metal protection ring Download PDFInfo
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- CN111162058A CN111162058A CN202010110737.4A CN202010110737A CN111162058A CN 111162058 A CN111162058 A CN 111162058A CN 202010110737 A CN202010110737 A CN 202010110737A CN 111162058 A CN111162058 A CN 111162058A
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Abstract
The invention relates to a metal protection ring of a gallium arsenide device. The metal guard ring of the gallium arsenide device is arranged around a tube core and comprises at least three metal layers, wherein the first metal layer is arranged on a substrate, the metal layers above the second metal layer comprise a continuous part and a disconnected part which are connected together, the continuous part surrounds the tube core, the upper part of the continuous part is connected with the upper metal layer, the disconnected part is arranged in sections, the lower part of the disconnected part is connected with the lower metal layer, the disconnected parts of the adjacent two metal layers above the second metal layer are arranged in a staggered mode, and dielectric materials are arranged on two sides of the metal guard ring and between the two adjacent disconnected parts. The invention ensures that BCB organic dielectric material is not easy to remain between the second metal layer and the third metal layer, thereby improving the reliability of the device. The continuous part and the broken part of the metal layer form a structure similar to a pier, so that the device is more stable at the protective ring, the yield of the device is improved, the usage amount of the electrogilding is reduced, and the cost is reduced.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a metal protection ring of a gallium arsenide device.
Background
The daily life of human beings is being changed by 5G communication, the Internet of things and smart homes, and high-frequency, high-power and function-diversified semiconductor components are key technologies for the development of the high-tech industries. Due to the characteristics of the materials, silicon devices cannot meet the performance requirements of high power and high frequency, and the compound semiconductor material represented by gallium arsenide has the physical characteristics of large forbidden band width, high electron mobility and the like, so that the application of components based on the compound semiconductor material in the fields of wireless network communication and the like shows outstanding advantages. Consumer demand for future communication products is increasingly moving towards higher power and faster speeds, making compound semiconductors the material of choice.
Besides the design of the epitaxial layer structure of the basic component and the improvement of the processing technology, the compound semiconductor also has various functional units in the chip, such as a transistor HBT with a vertical structure, a field effect transistor FET with a planar structure, a pseudo high electron mobility constant effect transistor pHEMT, a metal film resistor, a capacitor, an inductor and the like, and has higher and more complex integration, more and more diversified functional components contained in the same chip, more and more complex connections among various unit devices, and continuously improved reliability requirements of the devices, so that the connection integration of the devices in the chip faces the technical challenge with higher difficulty.
Inter Layer Dielectric Interconnect (ILD) technology replaces the traditional air bridge technology to make the die size design smaller and improve the mechanical resistance. The technology aims to ensure high-quality electrode communication among different functional components in a chip, increase the flexibility of metal wiring and further reduce the size of a tube core under the condition that the number of wires and connecting layers is increased continuously. Meanwhile, parasitic resistance and capacitance among metal wires laid between layers are further reduced, and further the transmission delay effect caused by the parasitic resistance and capacitance is minimized. The inter-layer dielectric Interconnect (ILD) technology has a substantial mechanical strength over conventional air-bridge technology, enabling flip-chip packaging processes.
Device guard rings in interlayer dielectric wire Interconnect (ILD) technology are indispensable structures in design. The design of guard rings on a die with an ILD structure requires that the guard ring have as many metal layers and ILD layers. The protection ring carries two important functions: 1. static electricity accumulated on the surface of the wafer in the process engineering can be effectively led out, the gallium arsenide device is prevented from being damaged by the static electricity high voltage, and the yield of the device is improved. 2. Preventing moisture ingress into the die area. Therefore, the reliability and the conduction performance of the metal guard ring are indispensable links in the design and manufacture of the GaAs chip.
The conventional guard ring process is illustrated in fig. 1 and consists of the same multiple metal layers and ILD layers: the bottom layer is metal wiring evaporated by an electron beam, a BCB (K is 2.8-3.3) organic dielectric material with the advantage of lower dielectric constant is adopted in the middle, the BCB is etched through a dry etching process, seed layer metal is sputtered, and gold is electroplated to ensure the conduction of the whole structure. When higher protection strength of devices is needed, one or more layers of similar structures, namely a third metal layer or more metal layers, need to be added, and the traditional process adopts two metal layers. The design stability of the protection ring can be influenced by the introduction of the third metal layer, the traditional design is that the third metal layer directly falls on the second metal layer, and the two metal layers are directly connected only by sputtering seed layer gold. The main reason is that the second metal layer may be recessed in the central region due to the filling property of the plating metal itself, and this may cause the phenomenon that the residual BCB cannot be removed during the etching of the third ILD layer. The result is that the residual BCB is wrapped between the connection of the third layer metal layer and the second layer metal layer, parasitic capacitance is formed, and the risk of cracking and separation exists in subsequent high-temperature process and packaging.
Disclosure of Invention
The invention aims to provide a metal protection ring of a gallium arsenide device, which has stronger static electricity conducting capability, no residual BCB, more stable mechanical property, less gold consumption and lower cost.
The metal guard ring is arranged around a tube core and comprises at least three metal layers, wherein a first metal layer of the metal guard ring is arranged on a substrate, more than a second metal layer of the metal guard ring comprises a continuous part and a disconnected part which are connected together, the continuous part surrounds the tube core, the upper part of the continuous part is connected with an upper metal layer, the disconnected part is arranged in sections, the lower part of the disconnected part is connected with a lower metal layer, the disconnected parts of the two adjacent metal layers are arranged in a mutually staggered mode, and dielectric materials are arranged on two sides of the metal guard ring and between the two adjacent disconnected parts.
Further, the width of the continuous portion is greater than the width of the breaking portion.
Further, the first metal layer is formed by evaporating metal on the substrate.
Furthermore, the first metal layer is formed by evaporating Ti, Pd and Au on the substrate, the thickness of Ti is 200-500 angstroms, the thickness of Pd is 500-800 angstroms, the thickness of Au is 5000-10000 angstroms, and the thickness of the first metal layer is 0.57-1.13 um.
Further, the thickness of the second layer metal layer is 2-6 um, and the thickness of the metal layer above the third layer is 3-6 um.
Furthermore, the metal layer above the second layer is formed by electroplating on the seed layer metal TiW/Au.
Further, the dielectric material is a BCB organic dielectric material.
Further, the BCB organic dielectric material has the same number of layers as the metal layers.
Further, the first layer of BCB organic dielectric material is subjected to a spin coating process and is cured at a high temperature of 240-300 ℃, and the thickness of the first layer of BCB organic dielectric material layer is 2.4-3.0 um; the thickness of the BCB organic dielectric material layer above the second layer is 2.6-4.0 um.
Further, the first metal layer is formed into an electrode by using a chemical stripping technology.
Compared with the prior art, the invention has the following advantages and effects:
1. the static electricity conducting capacity is stronger;
2. residual BCB does not influence the reliability of the device, and the mechanical property is more stable;
3. the gold consumption is less, and the cost is lower.
Drawings
FIG. 1 is a general schematic view and a partially enlarged top plan view of a conventional metal guard ring;
FIG. 2 is a front view of a conventional metal guard ring;
FIG. 3 is a side view of a conventional metal guard ring;
FIG. 4 is a schematic overall view and an enlarged partial top view of a metal guard ring of the present invention;
FIG. 5 is a front view of a metal guard ring of the present invention;
FIG. 6 is a schematic diagram of a metal layer above a second metal guard ring according to the present invention;
FIG. 7 is a cross-sectional view taken along line A-A of FIG. 5;
fig. 8 is a sectional view taken along line B-B in fig. 5.
Description of reference numerals:
1-die 2-dielectric material 3-metal guard ring 31-first level metal layer 32-second level metal layer 33-third level metal layer 4-substrate 301-continuous 302-disconnected.
Detailed Description
The present invention will be described in further detail below by way of examples with reference to the accompanying drawings, which are illustrative of the present invention and are not to be construed as limiting the present invention.
As shown in fig. 1, 2, and 3, a conventional metal guard ring is composed of the same multi-level metal layer and ILD layer: the bottom layer is a first metal layer evaporated by an electron beam, a BCB organic dielectric material with the advantage of lower dielectric constant is adopted in the middle, the K is 2.8-3.3, the BCB is etched through a dry etching process, seed layer metal is sputtered, and gold is electroplated to ensure the conduction of the whole structure. When higher device protection strength is needed, one or more layers of similar structures, namely, a third metal layer 33 or more metal layers, need to be added, and the conventional process is to use two metal layers: the design stability of the guard ring is affected by the introduction of the first metal layer 31 and the second metal layer 32, and the introduction of the third metal layer 33, the conventional design is that the third metal layer 33 directly falls on the second metal layer 32, as shown in fig. 1, the dotted line in the figure indicates that the second metal layer is below the third metal layer, and the two metal layers are directly connected only by sputtering seed layer gold, so the structure has high cost and large gold consumption, and BCB organic dielectric material is easily left between the third metal layer 33 and the second metal layer 32, which results in poor mechanical stability and poor static electricity conducting capability. The main reason is that due to the gap filling performance of the plated metal, the metal of the second metal layer 32 is recessed in the central region, which causes the phenomenon that the residual BCB organic dielectric material cannot be removed in the etching of the third ILD layer, so that the residual BCB is wrapped between the metal connection of the third metal layer 33 and the second metal layer 32 to form parasitic capacitance, and the risk of cracking and separation exists in the subsequent high-temperature process (arc welding) and packaging.
As shown in fig. 4, 5, and 6:
the structure of the metal ring is improved, the line structure of the metal layer with one line going to the bottom is replaced by a partial multilayer section disconnection design, the continuous part 301 and the disconnection part 302 are arranged on the metal layer, the disconnection parts 302 of the two adjacent metal layers are staggered, and the conduction of a conducting wire is guaranteed.
The first metal layer 31 is plated with a layer of Ti/Pd/Au by electron beam evaporation technology, which is called M1, and the thickness of the Ti: 200-500 angstroms, Pd:500-800 angstroms, Au: 5000-10000 angstrom, the thickness of the first metal layer is 0.57-1.13um, and then the electrode is formed by the chemical stripping technique (lift-off).
The metal layer above the second layer is arranged into two parts, namely a continuous part 301 and a disconnected part 302, the two parts are connected together, the continuous part 301 surrounds the tube core, the disconnected parts 302 are arranged below the continuous part at intervals and protrude out of the continuous part 301, the two disconnected parts 302 are in a tooth-shaped disconnected design, an opening is formed between the two disconnected parts 302, and the lower part of the disconnected part 302 is connected with the metal layer below the next layer, so that a structure similar to a pier is formed integrally. The upper part of the continuous part 301 of the second metal layer 32 is connected with the disconnected part 302 of the third metal layer 33, and the metal layers are ensured to be mutually conducted. If more metal layers are required, the structure is the same, and the broken parts 302 of two adjacent metal layers are designed in a staggered way. The width of the breaking portion 302 may be set smaller than that of the continuous portion 301, so that the conduction between the metal layers can be maintained, the consumption of metal can be saved, and the cost can be reduced.
The metal that switches on all adopts the plating machine to electroplate on seed layer metal TiW Au, and second layer metal level 32 thickness is 2 ~ 6um, the metal layer thickness more than third layer metal level 33 and the third layer is 3 ~ 6 um.
As shown in fig. 7, the broken portion of the third metal layer 33 and the continuous portion of the second metal layer 32 are connected in the cross section, and the second metal layer 32 and the broken portion 302 of the third metal layer 33 are offset from each other. The width of the disconnected portion 302 of the third metal layer 33 is smaller than the width of the continuous portion 301.
As shown in fig. 8, the broken portion 302 of the third metal layer 33 is not located above the broken portion 302 of the second metal layer 32 in the cross section, and an organic dielectric material is located between the continuous portion 301 of the third metal layer 33 and the continuous portion of the second metal layer 32. The width of the continuous portion 301 of the second metal layer 32 is greater than the width of the disconnected portion 302.
The dielectric material is also applied in layers, the number of layers is the same as the number of layers of the metal layer, the dielectric material is arranged on both sides of the metal layer and between the two breaks 302 of the metal layer above the second layer, and the uppermost layer of the metal guard ring is covered by the metal. The dielectric material is preferably a BCB organic dielectric material, the middle first layer of BCB organic dielectric material is subjected to a rotary coating process and is cured at a high temperature of 240-300 ℃, and the final thickness is 2.4-3.0 um; the thickness of the second layer or more layers of BCB is 2.6-4.0 um.
The structure of the invention ensures that the openings of the BCB organic dielectric materials of the second metal layer 32 and the third metal layer 33 are completely staggered in the processing process, is beneficial to the mutual connection of the metal layers, ensures the static electricity eliminating performance of the structure, is easier to realize the process, is not easy to leave the BCB organic dielectric materials between the second metal layer 32 and the third metal layer 33, and further improves the reliability of the device. The structure is the same if more metal layers need to be provided.
Meanwhile, the metal layer forms a structure similar to a pier type structure, so that the device is more stable at the protective ring, and the yield of the device is improved.
And due to the addition of the BCB organic dielectric material, the usage amount of the electrogilding is reduced, and the cost is further reduced under the condition of ensuring the stability of the device.
In addition, it should be noted that the specific embodiments described in the present specification may differ in the shape of the components, the names of the components, and the like. All equivalent or simple changes of the structure, the characteristics and the principle of the invention which are described in the patent conception of the invention are included in the protection scope of the patent of the invention. Various modifications, additions and substitutions for the specific embodiments described may be made by those skilled in the art without departing from the scope of the invention as defined in the accompanying claims.
Claims (10)
1. The metal protection ring is characterized by being arranged around a tube core and comprising at least three metal layers, wherein a first metal layer of the metal protection ring is arranged on a substrate, more than a second metal layer of the metal protection ring comprises a continuous part and a disconnected part which are connected together, the continuous part surrounds the tube core, the upper part of the continuous part is connected with the upper metal layer, the disconnected part is arranged in sections, the lower part of the disconnected part is connected with the lower metal layer, the disconnected parts of the two adjacent metal layers are arranged in a staggered mode, and dielectric materials are arranged on two sides of the metal protection ring and between the two adjacent disconnected parts.
2. The gallium arsenide device metal guard ring of claim 1, wherein the width of the continuous portion is greater than the width of the disconnected portion.
3. The gallium arsenide device metal guard ring of claim 2 wherein the first metal layer is formed by vapor deposition of metal on a substrate.
4. The metal guard ring of claim 3, wherein the first metal layer is formed by depositing Ti, Pd, and Au on the substrate by evaporation, the Ti thickness is 200-500A, the Pd thickness is 500-800A, the Au thickness is 5000-10000A, and the first metal layer thickness is 0.57-1.13 μm.
5. The GaAs device metal guard ring of claim 4, wherein the thickness of the second layer of metal layer is 2-6 um, and the thickness of the metal layer above the third layer is 3-6 um.
6. The GaAs device metal guard ring of claim 5, wherein said second or higher metal layer is formed by electroplating on a seed layer metal TiW/Au.
7. The gallium arsenide device metal guard ring of any of claims 1-6 wherein the dielectric material is a BCB organic dielectric material.
8. The gallium arsenide device metal guard ring of claim 7 wherein the BCB organic dielectric material has the same number of layers as the metal layer.
9. The metal guard ring of claim 8, wherein the first layer of BCB organic dielectric material is cured at a high temperature of 240-300 ℃ by spin coating, and the thickness of the first layer of BCB organic dielectric material is 2.4-3.0 μm; the thickness of the BCB organic dielectric material layer above the second layer is 2.6-4.0 um.
10. The gallium arsenide device metal guard ring of claim 9 wherein the first metal layer is formed on the electrode using a chemical lift-off technique.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010110737.4A CN111162058A (en) | 2020-02-24 | 2020-02-24 | Gallium arsenide device metal protection ring |
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| CN202010110737.4A CN111162058A (en) | 2020-02-24 | 2020-02-24 | Gallium arsenide device metal protection ring |
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| CN101373742A (en) * | 2007-08-22 | 2009-02-25 | 恩益禧电子股份有限公司 | Semiconductor device having seal ring structure and method of forming the same |
| CN105280568A (en) * | 2014-06-11 | 2016-01-27 | 中芯国际集成电路制造(上海)有限公司 | Sealing ring structure and manufacturing method thereof |
| CN106252297A (en) * | 2015-06-10 | 2016-12-21 | 台湾积体电路制造股份有限公司 | Semiconductor device and manufacture method thereof |
| CN106373960A (en) * | 2015-07-24 | 2017-02-01 | 台湾积体电路制造股份有限公司 | Semiconductor device and manufacturing method thereof |
| TWI675442B (en) * | 2018-09-20 | 2019-10-21 | 南亞科技股份有限公司 | Semiconductor device |
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2020
- 2020-02-24 CN CN202010110737.4A patent/CN111162058A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1499626A (en) * | 2002-10-30 | 2004-05-26 | ��ʿͨ��ʽ���� | Semiconductor device and its mfg. method |
| CN101373742A (en) * | 2007-08-22 | 2009-02-25 | 恩益禧电子股份有限公司 | Semiconductor device having seal ring structure and method of forming the same |
| CN105280568A (en) * | 2014-06-11 | 2016-01-27 | 中芯国际集成电路制造(上海)有限公司 | Sealing ring structure and manufacturing method thereof |
| CN106252297A (en) * | 2015-06-10 | 2016-12-21 | 台湾积体电路制造股份有限公司 | Semiconductor device and manufacture method thereof |
| CN106373960A (en) * | 2015-07-24 | 2017-02-01 | 台湾积体电路制造股份有限公司 | Semiconductor device and manufacturing method thereof |
| TWI675442B (en) * | 2018-09-20 | 2019-10-21 | 南亞科技股份有限公司 | Semiconductor device |
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Application publication date: 20200515 |
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