CN111146330A - Preparation method of passivation layer of copper film surface acoustic wave filter - Google Patents
Preparation method of passivation layer of copper film surface acoustic wave filter Download PDFInfo
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- CN111146330A CN111146330A CN201911397644.8A CN201911397644A CN111146330A CN 111146330 A CN111146330 A CN 111146330A CN 201911397644 A CN201911397644 A CN 201911397644A CN 111146330 A CN111146330 A CN 111146330A
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- photoresist
- copper film
- acoustic wave
- wave filter
- surface acoustic
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- 229910052802 copper Inorganic materials 0.000 title claims abstract description 55
- 239000010949 copper Substances 0.000 title claims abstract description 55
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 34
- 238000002161 passivation Methods 0.000 title claims abstract description 24
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 40
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 30
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000001704 evaporation Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 56
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 239000002346 layers by function Substances 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 3
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 239000005751 Copper oxide Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910000431 copper oxide Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a preparation method of a passivation layer of a copper film surface acoustic wave filter, which comprises the following steps: manufacturing a silicon dioxide layer on a piezoelectric substrate; coating photoresist on the silicon dioxide layer; exposing and developing the photoresist to form an interdigital transducer finger structure; carrying out high-temperature curing on the exposed and developed photoresist; etching the silicon dioxide layer; evaporating a metal film on the etched material; and removing the photoresist and the metal film on the photoresist by utilizing a stripping process. According to the invention, different passivation layers are filled in the upper surface and the gap of the copper film interdigital transducer, so that the protection of the copper film surface acoustic wave filter is realized, the performance stability of the copper film surface acoustic wave filter is improved, and the application field is expanded.
Description
Technical Field
The invention relates to the field of copper film surface acoustic wave filters, in particular to a preparation method of a passivation layer of a copper film surface acoustic wave filter.
Background
For the surface acoustic wave filter, the substrate material and the functional layer electrode material determine the application field thereof. The common electrode material of the surface acoustic wave filter is an aluminum film, which has very good conductivity and stability, but the electromechanical coupling coefficient is relatively small, and the relatively-limited bandwidth can be realized, so that the requirement of a communication system on large bandwidth is gradually difficult to meet. The copper film has a larger electromechanical coupling coefficient, can realize a larger relative bandwidth, and compared with the aluminum film, under the condition of realizing the same index, the film thickness is only approximate to 1/3, the process is simpler, and the copper film is more and more widely applied.
However, the copper film process has certain defects, most obviously, the device performance stability is poor, the copper film is very easy to react with oxygen in the air to generate copper oxide, and the copper oxide is loose and cannot prevent further oxidation reaction, so that the copper film device fails. The mainstream treatment method at home and abroad is to evaporate a silicon dioxide protective layer on the surface layer of a copper film, but the protective effect is poor when the coating is too thin, and the performance of the product is deteriorated when the coating is too thick; secondly, a multilayer film structure is used, but the multilayer film structure can only protect the surface of the copper film, and when the copper film is thin, the side oxidation is not negligible, so that how to improve the stability of the copper film device becomes a problem which needs to be solved urgently by a person skilled in the art.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides the preparation method of the passivation layer of the copper film surface acoustic wave filter, which improves the performance stability of the copper film surface acoustic wave filter and reduces the possibility of oxidation of the copper film.
The purpose of the invention is realized by the following technical scheme:
a preparation method of a passivation layer of a copper film surface acoustic wave filter comprises the following steps:
step 4, curing the exposed and developed photoresist at high temperature;
and 7, removing the photoresist and the metal film on the photoresist by utilizing a stripping process.
The metal film is of a three-layer structure and sequentially comprises a chromium film, a copper film and an aluminum film from bottom to top.
According to the technical scheme provided by the invention, the preparation method of the passivation layer of the copper film surface acoustic wave filter firstly manufactures the silicon dioxide layer on the piezoelectric substrate, etches the interdigital transducer finger structure on the silicon dioxide layer by using a dry etching technology, then evaporates and coats the metal film with the three-layer structure in the gap of the silicon dioxide layer, and uses the aluminum film as the upper surface protection layer, so that the copper film surface acoustic wave filter with the combined structure is obtained. According to the invention, the aluminum film is arranged on the upper surface of the copper film interdigital transducer to be used as the passivation layer, and the silicon dioxide layer is arranged in the gap of the copper film interdigital transducer to be used as the passivation layer, so that the stability of the copper film surface acoustic wave filter can be improved, the possibility of oxidation failure of the copper film surface acoustic wave filter is reduced, and the application field is expanded.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
Fig. 1 is a schematic flow chart of a method for manufacturing a passivation layer of a copper film surface acoustic wave filter according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a cleaned piezoelectric substrate provided by an embodiment of the present invention;
FIG. 3 is a schematic structural diagram illustrating a silicon dioxide layer after fabrication according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a structure after coating with a photoresist according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a developed image after exposure according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram after dry etching according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a metal film evaporated according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram after stripping the photoresist and the metal film on the photoresist according to an embodiment of the present invention.
In the drawings: 1-piezoelectric substrate, 2-silicon dioxide layer, 3-photoresist, 4-transition layer, 5-copper film and 6-aluminum film.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
The preparation method of the passivation layer of the copper film surface acoustic wave filter provided by the invention is described in detail below. Details which are not described in detail in the embodiments of the invention belong to the prior art which is known to the person skilled in the art.
As shown in fig. 1 to 8, a method for preparing a passivation layer of a copper film surface acoustic wave filter may include the following steps:
Specifically, the piezoelectric substrate 1 may be cleaned before the silicon dioxide layer 2 is fabricated on the piezoelectric substrate 1, and the piezoelectric substrate 1 is shown in fig. 2 after the cleaning. The silicon dioxide layer 2 can be fabricated on the piezoelectric substrate 1 by electron beam evaporation or magnetron sputtering, and the thickness of the silicon dioxide layer 2 should be the same as that of the metal film in step 6. Illustratively, LiTaO may be at 42 °3The structure of the silicon dioxide layer 2 sputtered on the piezoelectric substrate with the thickness of 200 nm-500 nm can be shown in figure 3.
And 2, coating photoresist 3 on the silicon dioxide layer 2.
Specifically, the coated photoresist 3 may employ a positive photoresist. Illustratively, the coated photoresist 3 may be an AZ series or SPR series positive photoresist, and the spin rate is 2000rpm to 3000rpm, as shown in fig. 4.
And 3, exposing and developing the photoresist 3 to enable the photoresist 3 to form an interdigital transducer finger structure.
Specifically, the shape of the interdigital transducer finger structure obtained after exposure and development is the shape required by the metal functional layer of the copper film surface acoustic wave filter; and after exposure and development, the upper surface of the silicon dioxide layer at the finger strip structure of the interdigital transducer is just exposed. Illustratively, a projection photoetching machine can be adopted for exposure and development, and the exposure time is 240 ms-500 ms; the developing solution can adopt NaOH solution with mass concentration of 7 per mill, and the developing time is 10-20 s, as shown in figure 5.
And 4, curing the exposed and developed photoresist 3 at high temperature.
For example, a high temperature oven may be used to cure the material, with a curing temperature of 110 ℃ ± 5 ℃.
And 5, etching the exposed silicon dioxide layer 2.
Illustratively, the exposed silicon dioxide layer may be etched using a dry etch technique to obtain a designed interdigital transducer topography, as shown in FIG. 6.
And 6, evaporating a metal film on the etched material.
Specifically, the metal film may be an integrally formed three-layer structure, and the metal film is a chromium film, a copper film 5, and an aluminum film 6 in sequence from bottom to top; the chromium film is a transition layer 4, so that the adhesive force is enhanced; the copper film 5 is a functional layer and realizes the product function of the copper film surface acoustic wave filter; the aluminum film 6 is a protective layer for preventing the upper surface of the copper film from being oxidized. For example, an electron beam coater may be used to deposit a metal film on the gap between the etched silicon dioxide layers and the upper surface of the photoresist, the structure of the film layer is, from bottom to top, a chromium film/a copper film/an aluminum film, the thickness of the chromium film is 1nm to 2nm, the thickness of the copper film is 100nm to 350nm, and the thickness of the aluminum film is 100nm to 150nm, as shown in fig. 7.
And 7, removing the photoresist and the metal film on the photoresist by utilizing a stripping process, so that a passivation layer can be manufactured on the upper surface and in the gap of the copper film interdigital transducer of the copper film surface acoustic wave filter.
Specifically, the photoresist and the metal film on the photoresist can be stripped by adopting acetone or N-methyl pyrrolidone, and the temperature of the solvent is 25-80 ℃. Illustratively, the photoresist and the metal film on the photoresist can be stripped in a water bath ultrasonic bath by using acetone and ethanol, the temperature of the solution is 25-35 ℃, and the structure of the obtained product is shown in fig. 8.
In conclusion, different passivation layers are filled in the upper surface and the gaps of the copper film interdigital transducer, so that the protection of the copper film surface acoustic wave filter is realized, the performance stability of the copper film surface acoustic wave filter is improved, and the application field is expanded.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (9)
1. A preparation method of a passivation layer of a copper film surface acoustic wave filter is characterized by comprising the following steps:
step 1, manufacturing a silicon dioxide layer on a piezoelectric substrate;
step 2, coating photoresist on the silicon dioxide layer;
step 3, exposing and developing the photoresist to enable the photoresist to form an interdigital transducer finger structure;
step 4, curing the exposed and developed photoresist at high temperature;
step 5, etching the silicon dioxide layer;
step 6, evaporating a metal film on the etched material;
and 7, removing the photoresist and the metal film on the photoresist by utilizing a stripping process.
2. The method for preparing the passivation layer of the copper film surface acoustic wave filter according to claim 1, wherein the metal film has a three-layer structure and comprises a chromium film, a copper film and an aluminum film in sequence from bottom to top.
3. The method for manufacturing a passivation layer for a copper film surface acoustic wave filter according to claim 2, wherein the three-layer structure of the metal film is integrally formed.
4. The method for preparing the passivation layer of the copper film surface acoustic wave filter as claimed in any one of claims 1 to 3, wherein the silicon dioxide layer is obtained by an electron beam evaporation method or a magnetron sputtering method, and the thickness of the silicon dioxide layer is the same as that of the metal film.
5. The method for preparing the passivation layer of the copper film surface acoustic wave filter according to any one of claims 1 to 3, wherein the coated photoresist is a positive photoresist.
6. The method for preparing the passivation layer of the copper film surface acoustic wave filter according to any one of claims 1 to 3, wherein the shape of the interdigital transducer finger structure obtained after exposure and development is the shape required by the metal functional layer of the copper film surface acoustic wave filter, and the upper surface of the silicon dioxide layer at the interdigital transducer finger structure is just exposed after exposure and development.
7. The method for preparing the passivation layer of the copper film surface acoustic wave filter according to any one of claims 1 to 3, wherein in the step 5, the exposed silicon dioxide layer is etched by using a dry etching technology.
8. The method for preparing the passivation layer of the copper film surface acoustic wave filter according to any one of claims 1 to 3, wherein in the step 6, a metal film is evaporated on the etched material by adopting an electron beam evaporation technology.
9. The method for preparing the passivation layer of the copper film surface acoustic wave filter according to any one of claims 1 to 3, wherein in the step 7, the photoresist and the metal film on the photoresist are stripped by acetone or N-methyl pyrrolidone, and the temperature of the solvent is 25 ℃ to 80 ℃.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911397644.8A CN111146330A (en) | 2019-12-30 | 2019-12-30 | Preparation method of passivation layer of copper film surface acoustic wave filter |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911397644.8A CN111146330A (en) | 2019-12-30 | 2019-12-30 | Preparation method of passivation layer of copper film surface acoustic wave filter |
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| CN111146330A true CN111146330A (en) | 2020-05-12 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112383287A (en) * | 2020-11-27 | 2021-02-19 | 广东省科学院半导体研究所 | Surface acoustic wave resonator and preparation method thereof |
| CN114640934A (en) * | 2022-04-20 | 2022-06-17 | 瑶芯微电子科技(上海)有限公司 | MEMS microphone and preparation method thereof |
| CN115242206A (en) * | 2022-09-22 | 2022-10-25 | 杭州左蓝微电子技术有限公司 | Interdigital transducer finger strip forming process and acoustic surface filter |
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| CN108461626A (en) * | 2018-04-28 | 2018-08-28 | 中国电子科技集团公司第二十六研究所 | Temperature compensation layer planarization method of temperature compensation type surface acoustic wave device |
| CN110011633A (en) * | 2019-04-25 | 2019-07-12 | 北京中科飞鸿科技有限公司 | A kind of SAW filter preparation method with positive photoresist high adhesion force |
| CN110086446A (en) * | 2019-04-26 | 2019-08-02 | 北京中科飞鸿科技有限公司 | A method of reducing L-band copper film SAW filter Denso crash rate |
-
2019
- 2019-12-30 CN CN201911397644.8A patent/CN111146330A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461626A (en) * | 2018-04-28 | 2018-08-28 | 中国电子科技集团公司第二十六研究所 | Temperature compensation layer planarization method of temperature compensation type surface acoustic wave device |
| CN110011633A (en) * | 2019-04-25 | 2019-07-12 | 北京中科飞鸿科技有限公司 | A kind of SAW filter preparation method with positive photoresist high adhesion force |
| CN110086446A (en) * | 2019-04-26 | 2019-08-02 | 北京中科飞鸿科技有限公司 | A method of reducing L-band copper film SAW filter Denso crash rate |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112383287A (en) * | 2020-11-27 | 2021-02-19 | 广东省科学院半导体研究所 | Surface acoustic wave resonator and preparation method thereof |
| CN114640934A (en) * | 2022-04-20 | 2022-06-17 | 瑶芯微电子科技(上海)有限公司 | MEMS microphone and preparation method thereof |
| CN114640934B (en) * | 2022-04-20 | 2024-04-02 | 瑶芯微电子科技(上海)有限公司 | MEMS microphone and preparation method thereof |
| CN115242206A (en) * | 2022-09-22 | 2022-10-25 | 杭州左蓝微电子技术有限公司 | Interdigital transducer finger strip forming process and acoustic surface filter |
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Application publication date: 20200512 |