CN111129356A - Method for preparing flexible substrate, flexible substrate and display device - Google Patents
Method for preparing flexible substrate, flexible substrate and display device Download PDFInfo
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- CN111129356A CN111129356A CN201811292587.2A CN201811292587A CN111129356A CN 111129356 A CN111129356 A CN 111129356A CN 201811292587 A CN201811292587 A CN 201811292587A CN 111129356 A CN111129356 A CN 111129356A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention relates to a method for preparing a flexible substrate, the flexible substrate and a display device. The method comprises the following steps: forming a peeling layer on one surface of a glass substrate, the peeling layer including at least a microcrystalline silicon thin film layer; forming a flexible substrate on the microcrystalline silicon thin film layer to obtain a substrate structure comprising the glass substrate, the stripping layer and the flexible substrate; applying an infrared laser irradiation treatment to the substrate structure to peel off the peeling layer on the substrate structure to obtain the flexible substrate.
Description
Technical Field
The invention relates to the technical field of display, in particular to a method for preparing a flexible substrate, the flexible substrate prepared by the method and a display device.
Background
In recent years, the display technology of the flexible OLED organic light emitting device is rapidly developed, and compared with the traditional glass rigid display device, the flexible display device has the advantages of impact resistance, strong shock resistance, light weight, small volume, wearability and the like.
Flexible display devices currently use flexible substrates widely, but flexible substrates are too flexible and pose a challenge to various film forming processes. Therefore, a glass substrate having good surface flatness and rigidity is generally required in the process of manufacturing a flexible substrate. After the flexible substrate is prepared, the flexible substrate needs to be peeled off from the glass substrate. Therefore, achieving effective peeling of the flexible substrate from the glass substrate is one of the key technologies for producing flexible display devices.
Currently, Laser Lift-off (LLO) technology is widely used to peel off the flexible substrate. The LLO device generally employs an ultraviolet Laser (UV Laser), and the flexible substrate is peeled by emitting ultraviolet light to irradiate the glass substrate, wherein the requirement for the transmittance of the glass substrate is high, and the specific glass substrate with high transmittance is generally selected, so as to facilitate the transmission of the ultraviolet light to realize the effective peeling of the flexible substrate. To obtain higher transmittance, it is necessary to reduce the reflection of light at the glass surface, absorption and scattering losses in the glass, which puts higher demands on the glass substrate and increases some manufacturing costs.
In addition, the ultraviolet laser is a device which is difficult to manufacture, has a more complex heterojunction structure and higher current density, and puts higher requirements on semiconductor materials. Therefore, laser sources such as uv lasers of LLO devices are very expensive, and the cost and time for maintaining the laser sources are also a great burden, which also results in a large increase in the investment cost of flexible OLEDs. Therefore, there is a need to provide a new technical solution to improve one or more of the problems in the above solutions.
It is noted that this section is intended to provide a background or context to the embodiments of the invention that are recited in the claims. The description herein is not admitted to be prior art by inclusion in this section.
Disclosure of Invention
An object of the present invention is to provide a method of manufacturing a flexible substrate, and a flexible substrate and a display device manufactured using the same, which overcome one or more of the problems due to the limitations and disadvantages of the related art, at least to some extent.
According to a first aspect of embodiments of the present invention, there is provided a method of manufacturing a flexible substrate, the method including:
forming a peeling layer on one surface of a glass substrate, the peeling layer including at least a microcrystalline silicon thin film;
forming a flexible substrate on the microcrystalline silicon thin film to obtain a substrate structure comprising the glass substrate, the stripping layer and the flexible substrate;
applying an infrared laser irradiation treatment to the substrate structure to peel off the peeling layer on the substrate structure to obtain the flexible substrate.
In the embodiment of the invention, the wavelength of the infrared laser is 808-1064 nm, and the laser energy is 200mJ/cm2～700mJ/cm2。
In the embodiment of the invention, the thickness of the microcrystalline silicon film is 500 nm-1000 nm.
In the embodiment of the invention, the thickness of the microcrystalline silicon film is 600 nm-900 nm.
In an embodiment of the present invention, the peeling layer further includes a metal protective layer between the microcrystalline silicon thin film and the flexible substrate; the method further comprises the following steps:
and forming a metal protection layer on the microcrystalline silicon thin film, and forming the flexible substrate on the metal protection layer.
In the embodiment of the invention, the thickness of the metal protective layer is 50 nm-100 nm.
In an embodiment of the present invention, the metal material of the metal protection layer is one or more of aluminum, silver, titanium and molybdenum.
According to a second aspect of the embodiments of the present invention, there is provided a flexible substrate manufactured by the method for manufacturing a flexible substrate according to any one of the above embodiments.
According to a third aspect of embodiments of the present invention, there is provided a method of manufacturing a display device, the method including:
forming a peeling layer on one surface of a glass substrate, the peeling layer including at least a microcrystalline silicon thin film;
forming a flexible substrate on the microcrystalline silicon thin film to obtain a substrate structure comprising the glass substrate, the stripping layer and the flexible substrate;
forming a display device structure on a flexible substrate of the substrate structure;
applying an infrared laser irradiation treatment to the substrate structure on which the display device structure is formed to peel the flexible substrate on which the display device structure is formed from the peeling layer on the substrate structure.
According to a fourth aspect of embodiments of the present invention, there is provided a display device manufactured by the method of manufacturing a display device described in the above embodiments.
The technical scheme provided by the embodiment of the invention can have the following beneficial effects:
in an embodiment of the present invention, a peeling layer including a microcrystalline silicon thin film is formed on a surface of a glass substrate, a flexible substrate is formed on the peeling layer, and then infrared laser light is applied to irradiate the peeling layer including the microcrystalline silicon thin film to break the peeling layer to realize peeling of the flexible substrate; thus, the peeling is realized through the infrared laser irradiation, compared with the ultraviolet laser, the infrared laser with lower cost can be adopted, no specific requirement is required for the glass substrate, the peeling can be realized through the common glass, and the cost is greatly reduced; in addition, the electron mobility and the hole mobility of the microcrystalline silicon are higher than those of amorphous silicon by more than two orders of magnitude, so that the microcrystalline silicon film is easier to break when irradiated by infrared laser, the stripping effect of the flexible substrate is better, and the product yield of the flexible substrate can be improved.
Drawings
FIG. 1 shows a flow chart of a method of preparing a flexible substrate in an exemplary embodiment of the invention;
FIG. 2 shows a schematic view of a substrate structure in an exemplary embodiment of the invention;
FIG. 3 shows a schematic view of another substrate structure in an exemplary embodiment of the invention;
FIG. 4 illustrates a flow chart of another method of preparing a flexible substrate in an exemplary embodiment of the invention;
FIG. 5 shows a schematic view of a further substrate structure in an exemplary embodiment of the invention;
FIG. 6 illustrates a flow chart of a method of fabricating a display device in an exemplary embodiment of the invention;
fig. 7 shows a schematic view of a display device in an exemplary embodiment of the invention.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
Furthermore, the drawings are merely schematic illustrations of the invention and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and thus their repetitive description will be omitted. Some of the block diagrams shown in the figures are functional entities and do not necessarily correspond to physically or logically separate entities.
First, a method of manufacturing a flexible substrate is provided in the present example embodiment. Referring to fig. 1, the method may include:
step S101: a peeling layer is formed on one surface of a glass substrate, the peeling layer including at least a microcrystalline silicon thin film.
Step S102: and forming a flexible substrate on the microcrystalline silicon thin film to obtain a substrate structure comprising the glass substrate, the stripping layer and the flexible substrate.
Step S103: applying an infrared laser irradiation treatment to the substrate structure to peel off the peeling layer on the substrate structure to obtain the flexible substrate.
According to the method for preparing the flexible substrate, the infrared laser is adopted for irradiation to realize peeling, compared with the ultraviolet laser, an infrared laser with lower cost can be adopted, no specific requirement is required for a glass substrate, the peeling can be realized by common glass, and the manufacturing cost is greatly reduced; in addition, the electron mobility and the hole mobility of the microcrystalline silicon are higher than those of amorphous silicon by more than two orders of magnitude, so that the microcrystalline silicon film is easier to break when irradiated by infrared laser, the stripping effect of the flexible substrate is better, and the product yield of the flexible substrate can be improved.
Hereinafter, the respective steps of the above-described method in the present exemplary embodiment will be described in more detail with reference to fig. 1 to 4.
In step S101, a peeling layer 20 is formed on one surface of the glass substrate 10, and the peeling layer 20 includes at least the microcrystalline silicon thin film 201.
Specifically, referring to fig. 2, in the embodiment of the present invention, there is no specific requirement for the transmittance of the glass substrate 10, and a general glass may be used. In addition, the flexible substrate 30 is peeled off by using an ultraviolet laser in the related art, and an amorphous silicon material is generally used for the peeling layer 20 (also referred to as a sacrificial layer) on the glass substrate 10. The embodiment of the present invention employs the peeling layer 20 constituted of the microcrystalline silicon thin film 201 different from the prior art.
Microcrystalline silicon (μ c-Si), also known as nanocrystalline silicon, is a polycrystalline silicon material with grains of about 10nm, and has properties different from large-grain polycrystalline silicon and amorphous silicon. Microcrystalline silicon has a better structural order than amorphous silicon (a-Si), which makes the carrier mobility relatively high. In this embodiment, the microcrystalline silicon thin film 201 may be formed on the surface of the glass substrate 10 by a chemical vapor deposition method, a reduced pressure chemical deposition method, a magnetron sputtering method, or the like.
In an embodiment of the invention, the microcrystalline silicon thin film 201 may have a thickness of 500nm to 1000 nm. Further, the thickness of the microcrystalline silicon thin film can be 600 nm-900 nm. Illustratively, the thickness may include, but is not limited to, 500nm, 600nm, 700nm, 800nm, 900nm, 1000nm, and the like. The inventor tests that when the thickness of the microcrystalline silicon film 201 is within the range of 500nm to 1000nm, the microcrystalline silicon film is more easily broken through infrared laser irradiation, effective stripping of the flexible substrate 30 is facilitated, the stripping effect is better, and the product yield of the flexible substrate 30 can be improved.
It should be noted that microcrystalline silicon is generally used as a solar cell window material, and the inventors have pioneered the application of microcrystalline silicon material in the preparation of flexible displays.
In step S102, a flexible substrate 30 is formed on the microcrystalline silicon thin film 201 to obtain a substrate structure including the glass substrate 10, the peeling layer 20, and the flexible substrate 30.
Specifically, the flexible substrate 30 may be a Polyimide (PI) film formed of PI resin. The PI resin is coated on the microcrystalline silicon thin film 201 of the glass substrate 10, and a high temperature may be applied by a PI curing apparatus to prepare and form the PI film, i.e., the flexible substrate 30. Alternatively, RGB (red, green, blue) pixel devices may be formed on the flexible substrate 30 by, for example, vapor deposition, and an encapsulation process for preventing air and moisture, for example, may be performed.
In step S103, an infrared laser irradiation treatment is applied to the substrate structure to peel off the peeling layer 20 on the substrate structure to obtain the flexible substrate 30.
Specifically, as shown in fig. 2, the glass substrate 10 is irradiated with infrared laser scanning on the side of the glass substrate 10 away from the peeling layer 20, light passes through the glass substrate 10 and reaches the microcrystalline silicon thin film 201, and the microcrystalline silicon thin film 201 is decomposed and broken under the irradiation of the infrared laser to peel the flexible substrate 30.
Specifically, in an embodiment of the present invention, the wavelength of the infrared laser is 808nm to 1064nm, and the laser energy is 200mJ/cm2～700mJ/cm2. Alternatively, the wavelengths may include, but are not limited to, 808nm, 860nm, 900nm, 915nm, 950nm, 975nm, 1000nm, 1064nm, and the like.
Alternatively, the laser energy may be 350mJ/cm2～700mJ/cm2E.g. 360mJ/cm2、400mJ/cm2、500mJ/cm2、600mJ/cm2And the like. The laser energy may further be 360mJ/cm2～650mJ/cm2. The inventors have found that when the laser wavelength and the energy are within the above values or ranges, the microcrystalline silicon thin film 201 is more easily decomposed and broken by irradiation with the infrared laser, which is advantageous for effective peeling of the flexible substrate 30 and provides a better peeling effect.
In an embodiment of the invention, referring to fig. 3, the peeling layer 20 may further include a metal protection layer 202 between the microcrystalline silicon thin film 201 and the flexible substrate 30. Accordingly, as shown in fig. 4, on the basis of the above embodiment, the method may further include the following steps:
step S401: and forming a metal protection layer on the microcrystalline silicon film.
Specifically, step S401 may be performed after step S101, that is, after the microcrystalline silicon thin film 201 is formed, for example, a plating metal protection layer 202 is formed on the microcrystalline silicon thin film 201.
In an embodiment of the present invention, the metal material of the metal protection layer 202 may adopt one or more of aluminum, silver, titanium and molybdenum, but is not limited thereto.
Step S402: forming the flexible substrate on the metal protection layer.
Illustratively, the flexible substrate 30 may be a Polyimide (PI) film formed of PI resin. The PI resin is coated on the metal protection layer 202 of the glass substrate 10, and a high temperature may be applied by a PI curing apparatus to prepare and form the PI film, i.e., the flexible substrate 30.
This step S402 may be followed by the step S103 of applying the above-mentioned infrared laser irradiation treatment to the substrate structure to peel off the flexible substrate 30 from the peeling layer 20 on the substrate structure. During infrared laser irradiation, the metal protection layer 202 is decomposed and broken along with the microcrystalline silicon thin film 201, so that the flexible substrate 30 is effectively peeled, and due to the existence of the metal protection layer 202, the flexible substrate 30 can be prevented from being damaged by laser irradiation such as burning, so that a protection effect is achieved, and the manufacturing yield of the flexible substrate 30 can be improved.
Further, the thickness of the metal protection layer 202 may be 50nm to 100nm, for example, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, and the like. The inventor tests that when the thickness of the metal protection layer 202 is within the above value or range, and the infrared laser irradiates the peeling layer 20 to decompose and break the microcrystalline silicon film 201, the metal protection layer 202 is decomposed and broken together with the microcrystalline silicon film 201, and the laser does not burn the surface of the flexible substrate 30, so that the metal protection layer can play a good role in protecting the flexible substrate 30 from being damaged by the laser, and the yield of the product is improved.
A second aspect of the embodiments of the present invention provides a flexible substrate, which is prepared by the method for preparing a flexible substrate according to any one of the above embodiments. For the method for preparing the flexible substrate, reference may be made to the description in the foregoing embodiments, and details are not repeated herein. The prepared flexible substrate 30 can refer to the flexible substrate 30 shown in fig. 2 or fig. 3.
In the embodiment, the flexible substrate prepared by the method for preparing the flexible substrate is stripped by adopting infrared laser irradiation, compared with the ultraviolet laser, an infrared laser with lower cost can be adopted, no specific requirement is required for a glass substrate, the stripping can be realized by common glass, and the manufacturing cost is greatly reduced; in addition, the electron mobility and the hole mobility of the microcrystalline silicon are higher than those of amorphous silicon by more than two orders of magnitude, so that the microcrystalline silicon film is easier to break when irradiated by infrared laser, the stripping effect of the flexible substrate is better, and the product yield of the flexible substrate can be improved.
A third aspect of embodiments of the present invention provides a method of manufacturing a display device, which may include, as shown in fig. 6, the steps of:
step S601: forming a peeling layer on one surface of a glass substrate, the peeling layer including at least a microcrystalline silicon thin film;
step S602: forming a flexible substrate on the microcrystalline silicon thin film to obtain a substrate structure comprising the glass substrate, the stripping layer and the flexible substrate;
step S603: forming a display device structure on a flexible substrate of the substrate structure;
step S604: applying an infrared laser irradiation treatment to the substrate structure on which the display device structure is formed to peel the flexible substrate on which the display device structure is formed from the peeling layer on the substrate structure.
Referring to fig. 5 in combination, the present embodiment is different from the embodiment of the method for manufacturing a flexible substrate described above in that: after the flexible substrate 30 is formed, a display device structure 40 is formed on the flexible substrate 30, for example, RGB (red, green, blue) pixel devices are formed on the flexible substrate 30 by vapor deposition, and an encapsulation process for preventing air and moisture, for example, may be performed to form an encapsulation film, and the like. Then, an infrared laser irradiation treatment is applied to the substrate structure on which the display device structure 40 is formed, so that the flexible substrate 30 on which the display device structure 40 is formed is peeled from the peeling layer 20 on the substrate structure.
For the same points of this embodiment as those of the above-mentioned method for manufacturing a flexible substrate, reference may be made to the detailed description of the foregoing embodiments, which are not repeated herein.
In the method for manufacturing the display device, the flexible substrate is peeled off by adopting infrared laser irradiation, and compared with the method adopting ultraviolet laser, an infrared laser with lower cost can be adopted, and no specific requirement is required for a glass substrate, so that peeling can be realized by common glass, and the manufacturing cost is greatly reduced; in addition, the electron mobility and the hole mobility of the microcrystalline silicon are higher than those of amorphous silicon by more than two orders of magnitude, so that the microcrystalline silicon film is easier to break when irradiated by infrared laser, the stripping effect of the flexible substrate is better, and the product yield of the flexible substrate can be improved.
An embodiment of the present invention further provides a display device, as shown in fig. 7, which is manufactured by the method for manufacturing a display device described in the above embodiment. The display device may be a flexible display device, such as a flexible OLED or the like. The method for manufacturing the display device may specifically refer to the description in the foregoing embodiments, and details are not repeated here.
In the embodiment, the display device is prepared by the method for preparing the display device, the flexible substrate is peeled by adopting infrared laser irradiation, and compared with the method adopting ultraviolet laser, an infrared laser with lower cost can be adopted, and no specific requirement is required on a glass substrate, so that peeling can be realized by common glass, and the manufacturing cost is greatly reduced; in addition, the electron mobility and the hole mobility of the microcrystalline silicon are higher than those of amorphous silicon by more than two orders of magnitude, so that the microcrystalline silicon film is easier to break when irradiated by infrared laser, the stripping effect of the flexible substrate is better, the product yield of the flexible substrate is improved, and the product yield of the prepared display device can be further improved.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by those skilled in the art.
Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
Claims (10)
1. A method of making a flexible substrate, the method comprising:
forming a peeling layer on one surface of a glass substrate, the peeling layer including at least a microcrystalline silicon thin film;
forming a flexible substrate on the microcrystalline silicon thin film to obtain a substrate structure comprising the glass substrate, the stripping layer and the flexible substrate;
applying an infrared laser irradiation treatment to the substrate structure to peel off the peeling layer on the substrate structure to obtain the flexible substrate.
2. The method of claim 1, wherein the infrared laser has a wavelength of 808nm to 1064nm and a laser energy of 200mJ/cm2～700mJ/cm2。
3. The method according to claim 1, wherein the microcrystalline silicon thin film has a thickness of 500nm to 1000 nm.
4. The method according to claim 3, wherein the microcrystalline silicon thin film has a thickness of 600nm to 900 nm.
5. The method according to any one of claims 1 to 4, wherein the peeling layer further comprises a metal protective layer between the microcrystalline silicon thin film and a flexible substrate; the method further comprises the following steps:
and forming a metal protection layer on the microcrystalline silicon thin film, and forming the flexible substrate on the metal protection layer.
6. The method of claim 5, wherein the metal protective layer has a thickness of 50nm to 100 nm.
7. The method of claim 5, wherein the metal material of the metal protection layer is one or more of aluminum, silver, titanium and molybdenum.
8. A flexible substrate produced by the method for producing a flexible substrate according to any one of claims 1 to 7.
9. A method of making a display device, the method comprising:
forming a peeling layer on one surface of a glass substrate, the peeling layer including at least a microcrystalline silicon thin film;
forming a flexible substrate on the microcrystalline silicon thin film to obtain a substrate structure comprising the glass substrate, the stripping layer and the flexible substrate;
forming a display device structure on a flexible substrate of the substrate structure;
applying an infrared laser irradiation treatment to the substrate structure on which the display device structure is formed to peel the flexible substrate on which the display device structure is formed from the peeling layer on the substrate structure.
10. A display device characterized by being produced by the method for producing a display device according to claim 9.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582576A (en) * | 2020-12-10 | 2021-03-30 | 深圳市华星光电半导体显示技术有限公司 | Flexible substrate preparation method and display panel |
| WO2022032838A1 (en) * | 2020-08-10 | 2022-02-17 | 深圳市华星光电半导体显示技术有限公司 | Substrate and separation method therefor, and display panel |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1497664A (en) * | 2002-10-08 | 2004-05-19 | 精工爱普生株式会社 | Circuit board and its manufacturing method, copy chip, copy source substrate, electro-optical device |
| CN103985665A (en) * | 2014-05-15 | 2014-08-13 | 深圳市华星光电技术有限公司 | Manufacturing method for flexible display |
| CN106098939A (en) * | 2016-08-26 | 2016-11-09 | 武汉华星光电技术有限公司 | The method of laser nondestructively peeling flexible base board |
| CN106340439A (en) * | 2015-07-06 | 2017-01-18 | 勤友光电股份有限公司 | Wafer structure for laser de-bonding processing |
-
2018
- 2018-11-01 CN CN201811292587.2A patent/CN111129356A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1497664A (en) * | 2002-10-08 | 2004-05-19 | 精工爱普生株式会社 | Circuit board and its manufacturing method, copy chip, copy source substrate, electro-optical device |
| CN103985665A (en) * | 2014-05-15 | 2014-08-13 | 深圳市华星光电技术有限公司 | Manufacturing method for flexible display |
| CN106340439A (en) * | 2015-07-06 | 2017-01-18 | 勤友光电股份有限公司 | Wafer structure for laser de-bonding processing |
| CN106098939A (en) * | 2016-08-26 | 2016-11-09 | 武汉华星光电技术有限公司 | The method of laser nondestructively peeling flexible base board |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022032838A1 (en) * | 2020-08-10 | 2022-02-17 | 深圳市华星光电半导体显示技术有限公司 | Substrate and separation method therefor, and display panel |
| CN112582576A (en) * | 2020-12-10 | 2021-03-30 | 深圳市华星光电半导体显示技术有限公司 | Flexible substrate preparation method and display panel |
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