CN110943181A - OLED device and preparation method thereof - Google Patents
OLED device and preparation method thereof Download PDFInfo
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- CN110943181A CN110943181A CN201911154616.3A CN201911154616A CN110943181A CN 110943181 A CN110943181 A CN 110943181A CN 201911154616 A CN201911154616 A CN 201911154616A CN 110943181 A CN110943181 A CN 110943181A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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Abstract
The invention discloses an OLED device and a preparation method thereof, wherein the OLED device comprises a color film substrate and an array substrate which are oppositely arranged; the packaging structure comprises a first water blocking structure and a second water blocking structure, wherein the first water blocking structure is covered on one surface, facing the array substrate, of the color film substrate; the second water-blocking structure is covered on one surface, facing the color film substrate, of the array substrate; and the packaging adhesive layer is packaged between the color film substrate and the array substrate and wraps the first water-blocking structure and the second water-blocking structure. The OLED device and the manufacturing method thereof have the advantages that the quantum dot layer and the water-blocking layer covering the quantum dot layer are manufactured on the color film substrate, the water-blocking layer is covered on the OLED layer of the array substrate to achieve the purpose of protecting the quantum dot hierarchical OLED device, meanwhile, the double-layer water-blocking layer is adopted on the OLED layer to enhance the water-blocking effect, the buffer layer is arranged between the double-layer water-blocking layer and used for buffering the stress caused by attaching the packaging adhesive in the subsequent packaging step, and the service life of the OLED device is prolonged.
Description
Technical Field
The invention relates to the field of OLED, in particular to an OLED device and a preparation method thereof.
Background
Quantum Dot (QD) is an inorganic nanoscale semiconductor material, can emit light of a specific frequency at a certain light pressure and electric field, and the light frequency thereof can be changed along with the change of the size of the QD, so that the QD can emit three primary colors of pure RGB by accurately controlling the size of the QD, thereby significantly improving the color gamut, and is widely applied to QD-LCD TVs at present. The OLED has the characteristics of self-luminescence, ultra-lightness, high response speed, wide viewing angle and the like. The QD and the OLED device are combined, so that the color gamut of the OLED can be effectively improved, the product performance is improved, and the quantum dot and the OLED need to be packaged, the influence of water vapor is reduced, and the service life is prolonged.
Disclosure of Invention
In order to solve the technical problems, the invention provides an OLED device and a preparation method thereof, which are used for solving the technical problems of quantum dot OLED devices and packaging thereof.
The technical scheme for solving the technical problems is as follows: the invention provides an OLED device, which comprises a color film substrate and an array substrate which are oppositely arranged; the packaging structure comprises a first water blocking structure and a second water blocking structure, wherein the first water blocking structure is covered on one surface, facing the array substrate, of the color film substrate; the second water-blocking structure is covered on one surface, facing the color film substrate, of the array substrate; and the packaging adhesive layer is packaged between the color film substrate and the array substrate and wraps the first water-blocking structure and the second water-blocking structure.
Furthermore, the second water-blocking structure comprises two water-blocking layers and a buffer layer arranged between the two water-blocking layers.
Further, the color film substrate comprises a first substrate; the color resistance layer is arranged on the first substrate; the barrier layer is arranged on the color resistance layer; the quantum dot layer is arranged on the barrier layer; the first water-blocking structure covers the color-blocking layer and the quantum layer and extends to the first substrate.
Furthermore, the color resistance layer comprises a plurality of color group units and a light shielding layer surrounding the color resistance units; the quantum layer comprises quantum dot units and a pixel defining layer surrounding the quantum dot units, wherein the quantum dot units correspond to the color resistance units.
Further, the array substrate comprises a second substrate; the thin film transistor structure layer is arranged on the second substrate; the OLED layer is arranged on the thin film transistor structure layer; the second water-blocking structure covers the OLED layer and extends to the thin film transistor structure layer.
Further, the material of the package structure is at least one of silicon nitride, silicon oxynitride, silicon oxide and aluminum oxide.
The invention also provides a preparation method of the OLED device, which comprises a preparation method of a color film substrate and an array substrate and an encapsulation method, wherein the encapsulation method comprises the steps of depositing a first water-blocking structure on one surface, facing the array substrate, of the color film substrate; depositing a second water blocking structure on one surface of the array substrate facing the color film substrate; and attaching the packaging adhesive material to the color film substrate and the array substrate, and curing the packaging adhesive material by heating or pressurizing to form a packaging adhesive layer.
Further, the preparation method of the color film substrate comprises the following steps: providing a first substrate; preparing a first substrate on the first substrate; preparing a color resistance layer on the first substrate, wherein the color resistance layer comprises a light shielding layer which is provided with a plurality of color resistance units and surrounds the color resistance units; preparing a barrier layer on the color resistance layer, wherein the barrier layer covers the color resistance layer; preparing a quantum layer on the barrier layer, wherein the quantum layer comprises a pixel defining layer on the barrier layer, a pixel opening is formed in the pixel defining layer corresponding to the color group unit, quantum dot units are prepared in the pixel opening through ink-jet printing, and each quantum dot unit corresponds to a color resistance unit; preparing a first blocking layer on the quantum layer, the first water-blocking structure covering the quantum layer and the color-blocking layer.
Further, the preparation method of the array substrate comprises the following steps: providing a second substrate; preparing a second substrate on the second substrate; preparing a thin film transistor structure layer on the second substrate; and preparing an OLED layer on the thin film transistor structure layer in an ink-jet printing mode.
Further, the packaging method specifically comprises the following steps: the first water blocking structure is prepared by the following steps: and depositing a layer of inorganic material on the color resistance layer, wherein the inorganic material covers the color resistance layer and the quantum layer and extends to the first substrate to form the first water blocking structure.
The second water-blocking structure comprises the following preparation steps: depositing a layer of inorganic material on the OLED layer, wherein the inorganic material covers the OLED layer and extends to the second substrate to form a first water-resistant layer; preparing a buffer layer on the first water-blocking layer, depositing an inorganic material on the buffer layer, covering the first water-blocking layer with the inorganic material and extending to the second substrate to form a second water-blocking layer, and combining the first water-blocking layer, the buffer layer and the second water-blocking layer to form the second water-blocking structure;
the preparation method of the packaging adhesive layer comprises the following steps: extruding one end of the packaging material from the side of the second water-blocking structure far away from the second substrate to the second substrate by a vacuum laminating technology, and completely laminating one end of the packaging material to the second substrate in a heating and pressurizing mode; attaching and pressing the side, far away from the second substrate, of the packaging material to the first substrate by a vacuum attaching technology; cutting and separating the first substrate from the first base plate, and attaching a first protective layer to one side, far away from the color resistance layer, of the first substrate; and cutting and separating the second substrate from the second base plate, and attaching a second protective layer to one side of the second substrate, which is far away from the thin film transistor structure layer.
The invention has the advantages that: according to the OLED device and the preparation method thereof, the quantum layer of the color film substrate is covered with the water-blocking layer, the OLED layer of the array substrate is covered with the water-blocking layer, so that the purpose of protecting the OLED device is achieved, meanwhile, the double-layer water-blocking layer is adopted on the OLED layer to enhance the water-blocking effect, the buffer layer is arranged between the double-layer water-blocking layer and used for buffering stress caused by attaching the packaging adhesive in the subsequent packaging step, and the service life of the OLED device is prolonged.
Drawings
The technical solution and other advantages of the present application will become apparent from the detailed description of the embodiments of the present application with reference to the accompanying drawings.
Fig. 1 is a schematic diagram of an OLED device in an embodiment.
Fig. 2 is a diagram of a first substrate preparation step in the embodiment.
FIG. 3 is a diagram showing the steps of preparing a color resist layer in the example.
FIG. 4 is a diagram illustrating a barrier layer manufacturing process in an example.
Fig. 5 is a diagram of a quantum layer preparation step in the example.
FIG. 6 is a diagram illustrating a first water blocking structure according to an embodiment.
Fig. 7 is a diagram of a second substrate preparation step in the embodiment.
Fig. 8 is a diagram illustrating a process for fabricating a structural layer of a thin film transistor in an embodiment.
FIG. 9 is a diagram of the OLED layer fabrication steps in the examples.
FIG. 10 is a diagram showing a first water-blocking layer preparation step in examples.
Fig. 11 is a diagram of a buffer layer preparation step in the example.
FIG. 12 is a diagram showing a second water-blocking layer production step in the example.
Fig. 13 is a diagram of a step of manufacturing a package structure in the embodiment.
In the drawings
10 an OLED device; 110 color film substrates;
120 array substrate; 130 a package structure;
101 a first protective layer; 111 a first substrate;
112 color resistance layer; 1121 color resistance unit;
1122 light-shielding layer; 113 a barrier layer;
114 a quantum layer; 1141 a pixel definition layer;
1142 quantum dot units; 11421 pixel openings;
102 a second protective layer; 121 a second substrate;
122 thin film transistor structure layer; 123 an OLED layer;
131 a first water-blocking structure; 132 a second water-blocking structure;
133 a packaging adhesive layer; 1321 a first water resistant layer;
1322 a buffer layer; 1323 a second water resistant layer;
1101 a first substrate; 1102 a second substrate;
Detailed Description
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. The directional terms used in the present invention, such as "up", "down", "front", "back", "left", "right", "top", "bottom", etc., refer to the directions of the attached drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention.
Examples
As shown in fig. 1, in this embodiment, the OLED device 10 includes a color film substrate 110, an array substrate 120 and an encapsulation structure 130, which are oppositely disposed.
The color filter substrate 110 includes a first substrate 111, a color resist layer 112, a barrier layer 113, and a quantum layer 114.
The first substrate 111 is a flexible substrate made of polyimide, so that the comprehensive performance is high, and the quality of the color film substrate 110 is ensured.
The color resistance layer 112 is disposed on the first substrate 111, specifically, the color resistance layer 112 includes a plurality of color resistance units, the color resistance units are red, green and blue color resistance units arranged in sequence, and after a light source passes through the color resistance units, light is filtered to correspond to colors of the color resistance units, so as to form a display picture of the OLED device in a combined manner.
The barrier layer 113 is disposed on the color resist layer 112 and covers the color resist layer 112, the quantum layer 114 is disposed on the barrier layer 113, and the quantum layer 114 includes a pixel definition layer 1141 and quantum dot units 1142, wherein the pixel definition layer 1141 is disposed on the barrier layer 113 and has a plurality of pixel openings corresponding to the color resist units, the quantum dot units 1142 are disposed in the pixel openings, each quantum dot unit 1142 corresponds to a color resist unit, and the quantum layer 114 promotes the color gamut of the OLED device 10 through quantum dot particles in the quantum dot units 1142.
The array substrate 120 includes a second substrate 121, a thin film transistor structure layer 122, and an OLED layer 123.
The second substrate 121 and the first substrate 111 are made of the same material and are made of flexible materials.
The thin film transistor structure layer 122 is disposed on the second substrate 121, and the thin film transistor structure layer 122 includes a plurality of circuit traces for transmitting electrical signals to provide electrical energy required by the OLED layer 123 for light emission.
The OLED layer 123 is disposed on the thin film transistor structure layer 122, and in this embodiment, the OLED layer 123 is a monochromatic blue OLED capable of emitting a stable blue light source.
The package structure 130 includes a first water blocking structure 131, a second water blocking structure 132, and a package adhesive layer 133.
The first water blocking structure 131 covers the color blocking layer 112 and the quantum layer 113 and extends to the first substrate 111, and the first water blocking structure 131 is made of an inorganic material and has a good ability of isolating water and oxygen, so that the color blocking layer 112 and the quantum layer 113 are prevented from being corroded by external water vapor, and the service life of the color film substrate 110 is prolonged.
The second water blocking structure 132 includes a first water blocking layer 1321, a buffer layer 1322, and a second water blocking layer 1323.
The first water blocking layer 1321 covers the OLED layer 123 and extends to the thin film transistor structure layer 122, so as to prevent the OLED layer 123 from being corroded by external water vapor.
The buffer layer 1322 is disposed on the first water blocking layer 1321, and protects the OLED layer 123 and the thin film transistor structure layer 122 when the array substrate 120 and the color filter substrate 110 are subsequently assembled, so as to prevent a circuit failure caused by an external force.
The second water blocking layer 1323 is disposed on the buffer layer 1322 to further prevent the OLED layer 123 from being corroded by external moisture.
The encapsulation adhesive layer 133 is encapsulated between the color film substrate 110 and the array substrate 120 and encapsulates the first water blocking structure 121 and the second water blocking structure 122, and the encapsulation adhesive layer 133 plays a role in connecting the color film substrate 110 and the array substrate 120, and can further protect the internal structures of the color film substrate 110 and the array substrate 120 from being invaded by external water vapor, so that the service life of the OLED device 10 is prolonged.
Each structure of the package structure 130 may be made of a material with a good waterproof property, such as silicon nitride, silicon oxynitride, silicon oxide, or aluminum oxide.
In order to protect the first substrate 111 and the second substrate 121, in this embodiment, the OLED device further includes a first protective layer 101 and a second protective layer 102 respectively attached to the outward facing sides of the first substrate 111 and the second substrate 121.
In order to better explain the present invention, the specific steps of the method for manufacturing an OLED device in this embodiment include a method for manufacturing a color filter substrate and an array substrate, and a method for encapsulating the color filter substrate and the array substrate, wherein,
the preparation method of the color film substrate 110 comprises the following steps:
a first substrate 1101 is provided.
As shown in fig. 2, a first substrate 111 is prepared on the first substrate 1101.
As shown in fig. 3, a color resistance layer 112 is formed on the first substrate 111, and includes a light-shielding layer 1122 surrounding the color resistance elements 1121, which is formed by forming a plurality of color resistance elements 1121.
As shown in fig. 4, a barrier layer 113 is prepared on the color resist layer 112, and the barrier layer 113 covers the color resist layer 112.
As shown in fig. 5, the step of preparing the quantum layer 114 on the barrier layer 113 includes preparing a pixel definition layer 1141 on the barrier layer 113, forming a pixel opening 11421 on the pixel definition layer corresponding to the color component unit 1121, and preparing quantum dot units 1142 in the pixel opening 11421 by inkjet printing, wherein each quantum dot unit 1143 corresponds to a color resistor unit 1121.
As shown in fig. 6, a first water-blocking structure 131 is prepared on the quantum layer, and the first water-blocking structure 131 covers the quantum layer 114 and the color-blocking layer 112.
The preparation method of the array substrate comprises the following steps:
a second substrate 1102 is provided.
As shown in fig. 7, a second substrate 121 is prepared on the second substrate 1102.
As shown in fig. 8, a thin film transistor structure layer 122 is prepared on the second substrate 121.
As shown in fig. 9, an OLED layer 123 is prepared on the thin film transistor structure layer 122 by an inkjet printing method.
The packaging method specifically comprises the following steps:
the first water blocking structure 131 includes:
a layer of inorganic material is deposited on the color-resist layer 112, covering the color-resist layer 112 and the quantum layer 114 and extending to the first substrate to form the first water-blocking structure 131.
The second water blocking structure 132 includes:
as shown in fig. 10, a layer of inorganic material is deposited on the OLED layer 123, covering the OLED layer 123 and extending to the second substrate 121 to form a first water blocking layer 1321.
As shown in fig. 11 and 12, a buffer layer 1322 is prepared on the first water-blocking layer 1321, an inorganic material is deposited on the buffer layer 1322, the inorganic material covers the first water-blocking layer 1321 and extends to the second substrate 121 to form a second water-blocking layer 1323, and the first water-blocking layer 1321, the buffer layer 1322 and the second water-blocking layer 1323 are combined to form the second water-blocking structure 132.
The preparation method of the packaging adhesive layer comprises the following steps:
as shown in fig. 13, one end of the packaging material is pressed from the side of the second water blocking structure 132 away from the second substrate 121 toward the second substrate 121 by a vacuum bonding technique, and one end of the packaging material is completely bonded to the second substrate 121 by heating and pressing.
Attaching and pressing the side of the packaging material away from the second substrate 121 to the first substrate 111 by a vacuum attaching technology; cutting and separating the first substrate 111 and the first substrate 1101, and attaching a first protective layer 101 to the side of the first substrate 111 away from the color resist layer 112.
And cutting and separating the second substrate 121 and the second substrate 1102, and attaching a second protective layer 102 to the side of the second substrate 121 far away from the thin film transistor structure layer 122.
The present invention is not limited to the above preferred embodiments, and any modifications, equivalent substitutions and improvements made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An OLED device, comprising
The color film substrate and the array substrate are oppositely arranged; and
a package structure comprising
The first water blocking structure is covered on one surface, facing the array substrate, of the color film substrate;
the second water-blocking structure is covered on one surface, facing the color film substrate, of the array substrate;
and the packaging adhesive layer is packaged between the color film substrate and the array substrate and wraps the first water-blocking structure and the second water-blocking structure.
2. The OLED device of claim 1,
the second water blocking structure comprises two layers of water blocking layers and a buffer layer arranged between the two layers of water blocking layers.
3. The OLED device of claim 1,
the color film substrate comprises
A first substrate;
the color resistance layer is arranged on the first substrate;
the barrier layer is arranged on the color resistance layer;
a quantum layer disposed on the barrier layer;
the first water-blocking structure covers the color-blocking layer and the quantum layer and extends to the first substrate.
4. The OLED device of claim 3,
the color resistance layer comprises a plurality of color group units and a light shielding layer surrounding the color resistance units;
the quantum layer comprises quantum dot units and a pixel defining layer surrounding the quantum dot units, wherein the quantum dot units correspond to the color resistance units.
5. The OLED device of claim 1, wherein the array substrate comprises
A second substrate;
the thin film transistor structure layer is arranged on the second substrate;
the OLED layer is arranged on the thin film transistor structure layer;
the second water-blocking structure covers the OLED layer and extends to the thin film transistor structure layer.
6. The OLED device of claim 1, wherein the material of the encapsulation structure is at least one of silicon nitride, silicon oxynitride, silicon oxide, and aluminum oxide.
7. The preparation method of the OLED device is characterized by comprising the preparation methods of a color film substrate and an array substrate and an encapsulation method, wherein the encapsulation method comprises the step of
Depositing a first water blocking structure on one surface, facing the array substrate, of the color film substrate;
depositing a second water blocking structure on one surface of the array substrate facing the color film substrate;
and attaching the packaging adhesive material to the color film substrate and the array substrate, and curing the packaging adhesive material by heating or pressurizing to form a packaging adhesive layer.
8. The method for manufacturing the OLED device according to claim 7, wherein the method for manufacturing the color film substrate comprises the following steps:
providing a first substrate;
preparing a first substrate on the first substrate;
preparing a color resistance layer on the first substrate, wherein the color resistance layer comprises a light shielding layer which is provided with a plurality of color resistance units and surrounds the color resistance units;
preparing a barrier layer on the color resistance layer, wherein the barrier layer covers the color resistance layer;
preparing a quantum layer on the barrier layer, wherein the quantum layer comprises a pixel defining layer on the barrier layer, a pixel opening is formed in the pixel defining layer corresponding to the color group unit, quantum dot units are prepared in the pixel opening through ink-jet printing, and each quantum dot unit corresponds to a color resistance unit;
preparing a first blocking layer on the quantum layer, the first water-blocking structure covering the quantum layer and the color-blocking layer.
9. The method for manufacturing an OLED device according to claim 8, wherein the method for manufacturing the array substrate includes:
providing a second substrate;
preparing a second substrate on the second substrate;
preparing a thin film transistor structure layer on the second substrate;
and preparing an OLED layer on the thin film transistor structure layer in an ink-jet printing mode.
10. The method of manufacturing an OLED device according to claim 9,
the packaging method specifically comprises the following steps:
the first water blocking structure is prepared by the following steps:
depositing a layer of inorganic material on the color resistance layer, wherein the inorganic material covers the color resistance layer and the quantum layer and extends to the first substrate to form the first water-blocking structure;
the second water-blocking structure comprises the following preparation steps:
depositing a layer of inorganic material on the OLED layer, wherein the inorganic material covers the OLED layer and extends to the second substrate to form a first water-resistant layer;
preparing a buffer layer on the first water-blocking layer, depositing an inorganic material on the buffer layer, covering the first water-blocking layer with the inorganic material and extending to the second substrate to form a second water-blocking layer, and combining the first water-blocking layer, the buffer layer and the second water-blocking layer to form the second water-blocking structure;
the preparation method of the packaging adhesive layer comprises the following steps:
extruding one end of the packaging material from the side of the second water-blocking structure far away from the second substrate to the second substrate by a vacuum laminating technology, and completely laminating one end of the packaging material to the second substrate in a heating and pressurizing mode;
attaching and pressing the side, far away from the second substrate, of the packaging material to the first substrate by a vacuum attaching technology; cutting and separating the first substrate from the first base plate, and attaching a first protective layer to one side, far away from the color resistance layer, of the first substrate;
and cutting and separating the second substrate from the second base plate, and attaching a second protective layer to one side of the second substrate, which is far away from the thin film transistor structure layer.
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| CN201911154616.3A CN110943181A (en) | 2019-11-22 | 2019-11-22 | OLED device and preparation method thereof |
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| CN201911154616.3A CN110943181A (en) | 2019-11-22 | 2019-11-22 | OLED device and preparation method thereof |
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| CN113193132A (en) * | 2021-04-26 | 2021-07-30 | 睿馨（珠海）投资发展有限公司 | Quantum dot OLED light-emitting device, display device and preparation method thereof |
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