CN110911357A - Intelligent power module and air conditioner - Google Patents
Intelligent power module and air conditioner Download PDFInfo
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- CN110911357A CN110911357A CN201911212350.3A CN201911212350A CN110911357A CN 110911357 A CN110911357 A CN 110911357A CN 201911212350 A CN201911212350 A CN 201911212350A CN 110911357 A CN110911357 A CN 110911357A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The invention discloses an intelligent power module and an air conditioner, wherein the intelligent power module comprises: the mounting substrate is provided with a plurality of mounting areas on one side surface, and a plurality of isolation grooves and mounting areas formed by the isolation grooves are arranged between any two adjacent mounting areas; and the plurality of driving power modules are arranged in the corresponding mounting areas and are isolated through isolation grooves. The invention reduces the possibility that the electric noise or pulse on the high-voltage side flees from the upper bridge power device and the lower bridge power device to the low-voltage driving module on the low-voltage side.
Description
Technical Field
The invention relates to the technical field of electronic circuits, in particular to an intelligent power module and an air conditioner.
Background
The intelligent power module is internally provided with a high-voltage driving circuit, a low-voltage driving circuit, an upper bridge arm switching tube and a lower bridge arm switching tube. The grid electrode of the switching tube is connected with the driving circuit, the collector electrode of the switching tube is coupled to high voltage, and the emitter electrode of the switching tube is coupled to a load. In an intelligent power module, a low-voltage side driving circuit and a high-voltage side driving circuit are generally integrated into one chip, and an upper arm switching tube and a lower arm switching tube are assembled on the same carrier, for example, a substrate, in a soldering manner. However, when the high voltage VH is larger than 1200V, this assembly does not meet the isolation requirement between the high voltage side and the low voltage side.
Disclosure of Invention
The invention mainly aims to provide an intelligent power module and an air conditioner, and aims to realize mutual isolation between a high-voltage side drive and a low-voltage side.
In order to achieve the above object, the present invention provides an intelligent power module, including:
the surface of one side of the mounting substrate is provided with a plurality of mounting areas, and an isolation groove is formed between any two adjacent mounting areas of the mounting substrate;
and the driving power modules are arranged in the corresponding mounting areas and are isolated from each other through the isolation grooves.
Optionally, each phase of the driving power module includes:
mounting a carrier;
the power switch tube is arranged on the base island of the mounting carrier, and the driving chip is stacked on the power switch tube; and the number of the first and second groups,
and the mounting carrier, the driving chip and the power switch tube are packaged in the plastic packaging part.
Optionally, each of the power switching transistors includes a controlled end pad, and each of the driving chips includes a driving end pad;
the driving end welding pad of the driving chip is connected with the controlled end welding pad of the power switch tube through a metal binding wire;
the power switch tube and the driving chip are fixedly connected through an insulating adhesive.
Optionally, the smart power module further includes an insulating medium filled between the driving power modules through a packaging mold to form a packaging case.
Optionally, the plastic package part of the driving power module is arranged outside the package housing in a protruding manner to form a boss;
the intelligent power module is further provided with a radiator, and the radiator is arranged on the boss.
Optionally, the smart power module further includes a housing, the mounting substrate and the plurality of driving power modules are disposed in the housing, and the housing is filled with an insulating medium.
Optionally, the isolation grooves are communicated with each other.
Optionally, the number of the driving power modules is four, and the four driving power modules form a single-phase three-level intelligent power module;
or the number of the driving power modules is twelve, and twelve driving power modules form a three-phase three-level intelligent power module.
Optionally, each phase of the three-level intelligent power module comprises an upper bridge arm driving power module, a lower bridge arm driving power module and a middle bridge arm driving power module, wherein the upper bridge arm driving power module and the lower bridge arm driving power module are arranged in series; the middle bridge arm driving power module is connected with the common end of the upper bridge arm driving power module and the common end of the lower bridge arm driving power module.
The invention also provides an air conditioner which comprises the intelligent power module.
The intelligent power module is provided with a plurality of mounting areas on the surface of one side of the mounting substrate, and an isolation groove is formed between any two adjacent mounting areas of the mounting substrate; and arranging the plurality of driving power modules in the corresponding mounting areas, so that the plurality of driving power modules are isolated through the isolation grooves. The invention reduces the possibility that the electric noise or pulse on the high-voltage side flees from the upper bridge power device and the lower bridge power device to the low-voltage driving module on the low-voltage side.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an embodiment of an intelligent power module according to the present invention;
FIG. 2 is a schematic diagram of a driving power module of the smart power module;
FIG. 3 is a schematic cross-sectional view of an embodiment of a smart power module of the present invention;
fig. 4 is a schematic structural diagram of a one-phase driving power module in the smart power module.
The reference numbers illustrate:
| reference numerals | Name (R) | Reference numerals | Name (R) |
| 10 | |
25 | |
| 11 | |
261 | Upper bridge arm |
| 20 | |
262 | Lower bridge arm |
| 21 | |
263、264 | Middle bridge arm |
| 22 | Driving chip | 30 | |
| 23 | |
40 | |
| 24 | |
50 | |
| 241 | Boss |
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides an intelligent power module.
An intelligent Power module, i.e., ipm (intelligent Power module), is a Power driving product combining Power electronics and integrated circuit technology. The intelligent power module integrates a power switch device and a high-voltage driving circuit and is internally provided with fault detection circuits such as overvoltage, overcurrent and overheat. The intelligent power module receives a control signal of the MCU to drive a subsequent circuit to work on one hand, and sends a state detection signal of the system back to the MCU on the other hand. Compared with the traditional discrete scheme, the intelligent power module wins a bigger and bigger market with the advantages of high integration degree, high reliability and the like, is particularly suitable for a frequency converter of a driving motor and various inverter power supplies, and is an ideal power electronic device for variable-frequency speed regulation, metallurgical machinery, electric traction, servo drive and variable-frequency household appliances.
The intelligent power module is internally provided with a high-voltage driving circuit, a low-voltage driving circuit, an upper bridge arm switching tube and a lower bridge arm switching tube. The grid electrode of the switching tube is connected with the driving circuit. The collector C of the switching tube is coupled to a high voltage. The emitter of the switch tube is coupled to the load. According to the control signal Sc of the low voltage, the driving circuit can correspondingly control the conduction state of the switch tube. When the switching tube is turned on, the high voltage VH may supply power to a load (e.g., a motor) via the switch. The switching tube needs to be resistant to high voltage and large current. Generally, the operating voltage of the driving circuit is low, and the operating voltage of the switching tube is high. In practical application, electrical noise or pulse on the high-voltage side can flow back from the lower bridge arm switching tube to the low-voltage driving circuit through a current loop between the upper bridge arm switching tube and the lower bridge arm switching tube. The electrical noise or pulse may affect the normal operation of the low voltage driving circuit, and even burn out the driving circuit. In addition, in the smart power module, a low-voltage side driving circuit and a high-voltage side driving circuit are usually integrated into one chip, and the upper arm switch tube and the lower arm switch tube are assembled on the same carrier, for example, a substrate, by soldering. However, when the high voltage VH is larger than 1200V, the low voltage side circuit and the high voltage side circuit are easily configured on the same circuit board, which may cause the switch tube to generate the electrical back-flushing phenomenon, resulting in the damage of the driving chip.
In order to solve the above problem, referring to fig. 1, in an embodiment of the present invention, the smart power module includes:
the mounting structure comprises a mounting substrate 10, wherein a plurality of mounting areas are arranged on one side surface of the mounting substrate 10, and an isolation groove 11 is arranged between any two adjacent mounting areas of the mounting substrate 10;
and the plurality of driving power modules 20 are arranged in the corresponding mounting areas, and the plurality of driving power modules 20 are isolated through the isolation grooves 11.
In this embodiment, the mounting substrate 10 may be implemented by a circuit substrate made of a DBC board, a PCB board, a half-glass fiber board, a glass fiber board, or any one of an aluminum substrate, an aluminum alloy substrate, a copper substrate, or a copper alloy substrate. The shape of the mounting substrate 10 may be determined according to the specific position, number and size of the driving power modules 20, and may be a square shape, but is not limited thereto. The mounting substrate 10 is realized by adopting a ceramic copper-clad plate, wherein the ceramic copper-clad plate comprises a circuit wiring layer and an insulating heat dissipation layer, and the circuit wiring layer is arranged on the insulating heat dissipation layer; the driving power module 20 is disposed on a pad formed on the circuit wiring layer.
In the case of implementation using a PCB, the mounting substrate 10 includes an insulating layer and a circuit wiring layer formed on the insulating layer, and in the present embodiment, the mounting substrate 10 may be a single-sided wiring board. The insulating layer is used for realizing electrical isolation and electromagnetic shielding between the circuit wiring layer and the metal mounting substrate 10 and reflecting external electromagnetic interference, so that the normal work of an external electromagnetic radiation interference power device is avoided, and the interference influence of electromagnetic radiation in the surrounding environment on electronic elements in the intelligent power module is reduced. The insulating layer may be made of thermoplastic glue or thermosetting glue, so as to realize the fixed connection and insulation between the mounting substrate 10 and the circuit wiring layer. The insulating layer can be realized by a high-heat-conductivity insulating layer which is realized by mixing one or more materials of epoxy resin, aluminum oxide and high-heat-conductivity filling material. In the process of manufacturing the mounting substrate 10, a copper foil may be laid on the insulating layer and etched according to a circuit design preset for the smart power module, thereby forming a circuit wiring layer. The mounting substrate 10 may further include a main control MCU, a capacitor, a resistor, and other components, and the main control MCU, the capacitor, the resistor, the driving power module 20, and the driving power module 20 are electrically connected to each other through a circuit wiring layer.
Each driving power module 20 is an independent single package, and the high-side driving power module 20 and the low-side driving power module 20 are separately arranged, that is, the driving chips 22 in the high-side driving power module 20 and the low-side driving power module 20 are independently packaged in the respective driving power modules 20, so as to form package isolation. Because the electrical connection between the high-voltage driving module and the low-voltage driving module is reduced, the possibility that the electric noise or pulse on the high-voltage side flees from the upper bridge power device and the lower bridge power device to the low-voltage driving module on the low-voltage side can be reduced.
Among the plurality of driving power modules 20, including the high-voltage side driving power module 20 and the low-voltage side driving power module 20, an isolation groove 11 is provided between the high-voltage side driving power module 20 and the low-voltage side driving power module 20, and an isolation groove 11 is also provided between the high-voltage side and the high-voltage side. The isolation grooves 11 can be selectively arranged between the low-voltage side driving power modules 20 according to the actual application requirements.
In another embodiment, the plurality of driving power modules 20 may also include a high-side driving power module 20, a low-side driving power module 20, and a middle-point driving power module 20. The intelligent power module can be a three-level intelligent power module, and in the three-level intelligent power module, the four driving power modules 20 form a phase bridge arm circuit. Isolation grooves 11 are provided between the four driving power modules 20 to realize isolation between the high-voltage side and the low-voltage side.
The depth, width and length of the isolation groove 11 formed on the mounting substrate 10 can be set according to the isolation requirement between high and low voltages, and the higher the load voltage driven by the intelligent power module is, the larger the depth, width and length of the isolation groove 11 are. The creepage distance between the high-voltage side driving power module 20 and the low-voltage side driving power module 20 can be increased by the arrangement of the isolation groove 11, thereby increasing the electrical safety distance of the low-voltage side driving power module 20. The driving power modules 20 are arranged at intervals through the isolation grooves 11, and the isolation grooves 11 can realize electrical isolation among the driving power modules 20, so that the situation that the high-voltage driving damages the low-voltage driving due to overlarge pressure difference to the low-voltage driving, the normal work of the low-voltage driving is influenced, and the interference influence of the internal high-voltage driving and the low-voltage driving is reduced is avoided. Further, the isolation grooves 11 communicate with each other, so that the creepage distance between the driving power modules 20 can be increased. So set up, be favorable to increasing the isolation effect between each drive power module 20 to realize mutual isolation between high pressure side drive power module 20 and the low pressure side drive power module 20, produce noise interference to the low pressure side with the signal of avoiding the high pressure side.
The intelligent power module is provided with a plurality of mounting areas on one side surface of a mounting substrate 10, and an isolation groove 11 is arranged between any two adjacent mounting areas of the mounting substrate 10; the plurality of driving power modules 20 are disposed in the corresponding mounting regions, so that the plurality of driving power modules 20 are isolated from each other by the isolation grooves 11. The invention reduces the possibility that the electric noise or pulse on the high-voltage side flees from the upper bridge power device and the lower bridge power device to the low-voltage driving module on the low-voltage side.
Referring to fig. 2, in an embodiment, each phase of the driving power module 20 includes:
a mounting carrier 21;
a driving chip 22 and a power switch tube 23; the power switch tube 23 is arranged on the base island of the mounting carrier 21, and the driving chip 22 is superposed on the power switch tube 23; and the number of the first and second groups,
and the plastic package 24, the mounting carrier 21, the driving chip 22 and the power switch tube 23 are packaged in the plastic package 24.
In this embodiment, the mounting carrier 21 may be implemented by a lead frame, a corresponding line and a corresponding pad and a corresponding line for fixedly mounting the driving chip 22 and the power switch tube 23 are formed on the lead frame according to the circuit design of the driving chip 22 and the power switch tube 23, and a metal layer is disposed on the power switch tube 23. The metal layers are connected to the wiring of the mount carrier 21 by wire bonding to achieve electrical connection. The lead frame is further provided with a pin 25, power ends, signal ends, input ends and the like of the power switch tubes 23 and the driving chip 22 are connected to external working signals through the lead and the pin 25 to work, and the driving chip 22 generates corresponding power driving signals according to received control signals based on the control of the external signals, so as to drive the respective power switch tubes 23 to work. Of course, in other embodiments, the mounting carrier may also be implemented by using a carrier such as a ceramic copper clad substrate, which is not limited herein.
The power switch tube 23 may be a gallium nitride (GaN) power switch tube 23, a Si-based power switch tube 23, or a SiC-based power switch tube 23, and may specifically be an IGBT tube or a high voltage MOSFET, a HEMT, or the like. When the RC-IGBT is adopted for realization, the structure of the intelligent power module can be simplified due to no need of a secondary anti-parallel diode, so that the size of the intelligent power module is reduced, the use of elements can be reduced, and the elements are more conveniently pasted and packaged. When the intelligent power module works, the driving chip 22 outputs a corresponding PWM control signal to drive and control the power switching tube 23 to be turned on/off, so as to output driving power to drive the motor and other loads to work. The plastic package body is used for integrating the driving chip 22, the power device and the mounting carrier 21 into a single package body, so that the single package body is isolated from the single package body. The driving chip 22 and the power device are packaged into a whole, so that the high-voltage driving chip 22 and the high-voltage power tube can be packaged into a single body, and the low-voltage driving chip 22 and the low-voltage power tube can be packaged into a single body, so that the isolation between high voltage and low voltage can be met. Compared with the space between the high-voltage driving chip 22 and the low-voltage driving chip 22; between the high-voltage power tube and the low-voltage power tube; between the high-voltage driving chip 22 and the low-voltage power tube; between high voltage driver chip 22 and high voltage driver chip 22 to and between high voltage power tube and the high voltage power tube, all need carry out among the isolation scheme of keeping apart, this embodiment only needs keep apart each drive power module 20, thereby can reduce the process of keeping apart, and be favorable to improving the isolation effect.
Referring to fig. 2, in an embodiment, each of the power switch transistors 23 includes a controlled terminal pad, and each of the driving chips 22 includes a driving terminal pad;
the driving end welding pad of the driving chip 22 is connected with the controlled end welding pad of the power switch tube 23 through a metal binding wire;
the power switch tube 23 and the driving chip 22 are fixedly connected through an insulating adhesive.
In this embodiment, the controlled end pad of the power switch tube 23 is located on a side of the power switch tube 23 away from the mounting substrate 10, the driving end pad of the driving chip 22 is located on a side of the driving chip 22 away from the mounting substrate 10, and the driving end pad of the driving chip 22 is connected to the controlled end pad of the power switch tube 23 through a metal binding wire.
All the welding pads of the controlled end of the power switch tube 23, the driving chip 22 including the welding pad of the driving end are arranged upward relative to the mounting carrier 21, that is, away from the mounting carrier 21, and the welding pad of the driving end of the driving chip 22 and the welding pad of the controlled end of the power switch tube 23 are fixedly connected through a metal binding wire and soldering tin, wherein the metal binding wire can be silver, gold metal wire or copper wire. The input terminal pad and the output terminal pad of the power switch tube 23 may be disposed upward or downward, and in this embodiment, the power switch tube 23 and the other pads of the driving chip 22 are disposed upward and connected to the mounting locations and pads formed by the circuit wiring layer of the mounting substrate 10 through metal binding wires. It is understood that the driving chip 22 and the power switch tube 23 may be implemented by a bare wafer, or may be implemented by a packaged patch element. The lead frame is further provided with a pin 25, power ends, signal ends, input ends and the like of the power switch tube 23 and the driving chip 22 are connected to external working signals through the lead and the pin 25 to work, and the driving chip 22 generates corresponding power driving signals according to received control signals based on control of the external signals, so that the power switch tube 23 in the intelligent power module is driven to work.
Each driving chip 22 is stacked on a power switch tube 23, so that the power switch tube 23 and the driving chip 22 form a stacked structure and are integrally disposed, and the spatial distance between the power switch tube 23 and the driving chip 22 can be shortened. The installation position of the driving chip 22 can be reduced on the installation substrate 10, so that the layout area of each driving power module on the installation substrate is increased, the creepage distance between the high-voltage side and the low-voltage side can be further increased, the safety distance between the high-voltage side and the low-voltage side is further increased, and the problem of interference caused by too small distance between the high-voltage side and the low-voltage side is favorably solved. Driver chip 22 piles up on power switch 23, and the circuit between driver chip 22 and the power switch 23 is walked the line and is shorter for driver chip 22 can be faster more effective control power switch 23's operating condition, whether for example generate heat seriously, and then in time act, in order to avoid intelligent power module to be damaged, improve the reliability of system. The physical connection distance between the bonding wires and the leads between the power switch tube 23 and the driving chip 22 is shortened, and the parasitic inductance introduced by the bonding wires and the leads is reduced.
Referring to fig. 3, in an embodiment, the smart power module further includes an insulating medium filled between the driving power modules 20 through a packaging mold to form a packaging case 30.
In this embodiment, the package housing 30 may be made of epoxy resin, alumina, silica, or other materials. When the package case 30 is manufactured, materials such as epoxy resin, aluminum oxide, boron nitride, aluminum nitride and the like can be mixed, and then the mixed package material is heated; after cooling, the packaging material is crushed, and then the packaging shell 30 material is rolled and formed by an ingot particle forming process to form the packaging shell 30, and then the driving power module 20 is packaged in the packaging shell 30. The smart power module may package the driving power module 20 and the mounting substrate 10 in a full package or a half package.
In the invention, each driving chip 22 is stacked on a power switch tube 23, and is packaged once through a plastic package 24 to form a driving power module 20, and after the driving power module 20 is mounted on a mounting substrate 10, the driving power modules 20 are dielectrically insulated through an insulating medium, and a secondary packaged intelligent power module is formed. According to the arrangement, through the insulation isolation of secondary packaging, the anti-interference capacity of the intelligent power module can be effectively improved, and the intelligent power module is suitable for high-voltage driven motor drive, frequency converters and various inverter power supplies, so that the functions of variable frequency speed regulation, metallurgical machinery, electric traction, servo drive and the like are realized, and the intelligent power module is particularly suitable for driving motors of compressors and fans such as air conditioners and refrigerators to work.
Referring to fig. 3, in an embodiment, the plastic package 24 of the driving power module 20 is partially protruded out of the package housing 30 to form a boss 241;
the intelligent power module is further provided with a radiator 40, and the radiator 40 is arranged on the boss 241.
In this embodiment, in order to improve the heat dissipation efficiency of the intelligent power module, a semi-encapsulation package may be adopted, that is, the driving power module 20 of the intelligent power module is partially exposed outside the package housing 30, and when the intelligent power module is further provided with the heat sink 40, the surface of the driving power module 20 exposed outside the package housing 30 of the intelligent power module may be better attached to the heat sink 40. The heat sink 40 may be made of high thermal conductive material such as aluminum, aluminum alloy, etc. with good heat dissipation effect, so that the heat generated by the power switch tube 23 in the driving power module 20 is conducted to the heat sink 40 through the mounting substrate 10, thereby further increasing the contact area between the heat generated by the power device 40 and the air and increasing the heat dissipation rate. The heat sink 40 may further include a heat sink 40 body and a plurality of heat dissipating fins disposed on one side of the heat sink 40 body at intervals. With such an arrangement, the contact area between the heat sink 40 and the air can be increased, that is, the contact area between the heat on the heat sink 40 and the air can be increased when the heat sink 40 operates, so as to increase the heat dissipation rate of the heat sink 40. Meanwhile, the material of the radiator 40 can be reduced, and the over-high cost of the radiating fins 30 caused by the excessive application of the material can be avoided.
Referring to fig. 3, in an embodiment, the smart power module further includes a housing 50, and the housing 50 is disposed outside the package housing 30.
In this embodiment, the housing 50 may be implemented by a casing formed by PPS material, PBT material, or other plastics. When the intelligent power module is subjected to plastic packaging, the mounting substrate 10 provided with the driving power module 20 is placed in the shell 50, then a packaging material is injected into the shell 50, so that a packaging shell 30 is formed after molding, and the driving power module 20 and the mounting substrate 10 are packaged in the packaging shell 30. In this way, the driving chip 22 can be insulated and the EMI performance of the smart power module can be improved. Through filling the plastic package glue in the shell 50, can form a holistic intelligent power module with drive power module 20, mounting substrate 10 etc. and through the insulating packing of plastic package glue, can realize that drive power module 20 can realize the isolation between high pressure side drive power module 20 and the low pressure side drive power module 20.
Referring to fig. 1 and 4, in an embodiment, the number of the driving power modules 20 is four, and four driving power modules 20 form a single-phase three-level intelligent power module.
Or, the number of the driving power modules 20 is twelve, and twelve driving power modules 20 constitute a three-phase three-level intelligent power module.
In this embodiment, the intelligent power module may include a bridge arm circuit formed by two switching tubes, namely, an upper bridge arm switching tube and a lower bridge arm switching tube, in this embodiment, the three-phase bridge arm circuit may include six power switching tubes 23, and the six power switching tubes 23 form a three-phase inverter circuit, so that the intelligent power module is applied to electrical equipment, such as an inverter power supply, a frequency converter, refrigeration equipment, metallurgical mechanical equipment, and electric traction equipment, and particularly applied to frequency conversion household appliances.
The three-phase three-level intelligent power module also comprises a bridge arm circuit consisting of four switching tubes, namely an upper bridge arm switching tube, a lower bridge arm switching tube and a transverse bridge arm switching tube (or a middle bridge arm switching tube), namely each phase three-level intelligent power module comprises four power switching tubes 23. In this embodiment, the single-phase three-level four driving power modules 20, the package casing 30 and the housing 50 may be packaged into a single-phase intelligent power module. Twelve driving power modules 20 can also be integrated on the same mounting substrate 10, and then packaged with the packaging shell 30 and the casing 50 to form an intelligent power module whole of a three-phase bridge arm circuit, which can be specifically set according to the requirements of practical application, and is not limited here. The three-level intelligent power module can be selected as a T-type three-level intelligent power module.
In the above embodiment, each phase of the three-level intelligent power module includes an upper bridge arm driving power module 261, a lower bridge arm driving power module 262 and two middle bridge arm driving power modules 263, where the upper bridge arm driving power module 261 and the lower bridge arm driving power module 262 are connected in series; the two middle bridge arm driving power modules 263 and 264 are connected to a common end of the upper bridge arm driving power module 261 and the lower bridge arm driving power module 262. The two middle-arm driving power modules include two power switching tubes 263 and 264 arranged in anti-parallel and a driving chip 22 for driving the two power switching tubes 23 and 24 to operate respectively. The IGBT chip can integrate the FRD tube or not according to practical application, the drive chip 22 and the IGBT chip are assembled into a unit in a lamination assembly mode, the unit is packaged into the drive power module 20 through a plastic package process, the drive power module 20 is assembled on a PCB, the creepage distance of the PCB is increased through slotting, the PCB is assembled on an IPM module shell 50 suite and is internally filled with a dielectric insulating material, and the insulation and withstand voltage of more than 1200V is realized in a dielectric insulation mode to assemble the IPM module. The two power switch tubes 23 may be implemented by using RB-IGBT (Reverse blocking insulated Gate Bipolar Transistor) as an option. And a connecting point between the two direct current bus capacitors C1 and C2 is connected to the middle point of the bridge arm through two anti-parallel reverse blocking type insulated gate bipolar transistors, and due to the technological structure characteristics of the RB-IGBT, the loss is lower. In order to better illustrate the operation process of the three-level intelligent power module, the present embodiment takes the operation process of a one-phase three-level intelligent power module as an example, wherein the three-level intelligent power module includes power switches Q1, Q3, Q3 and Q4, and driving chips IC1, IC2, IC3 and IC 4. The working principle is as follows: the switching tubes Q3 and Q4 are opened in the positive half cycle, the output voltage is increased from 0 to U/2, and then the switching tube Q3 is closed; the switching tubes Q1 and Q4 are opened, the output voltage is increased from U/2 to U, and then the switching tube Q1 is closed; the switching tubes Q3 and Q4 are opened, the output voltage is reduced from U to U/2, and then the switching tube Q3 is closed; the switching tube Q4 is opened and the output voltage decreases from U/2 to 0. The switching tubes Q3 and Q4 are opened in the negative half cycle, the output voltage is reduced to-U/2 from 0, and then the switching tube Q4 is closed; the switching tubes Q2 and Q3 are opened, the output voltage is reduced from-U/2 to-U, and then the switching tube Q2 is closed; the switching tubes Q3 and Q4 are opened, the output voltage is increased from-U to-U/2, and then the switching tube Q4 is closed; the switching tube Q3 opens and the output voltage increases from-U/2 to 0. In the whole process, the voltage is divided into three levels of 0, U/2 and U no matter in the positive half cycle or the negative half cycle.
The invention also provides an air conditioner which comprises the intelligent power module. The invention also provides an air conditioner which comprises the intelligent power module. The detailed structure of the intelligent power module can refer to the above embodiments, and is not described herein again; it can be understood that, because the intelligent power module is used in the air conditioner of the present invention, the embodiment of the air conditioner of the present invention includes all technical solutions of all embodiments of the intelligent power module, and the achieved technical effects are also completely the same, and are not described herein again.
The above description is only an alternative embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A smart power module, comprising:
the surface of one side of the mounting substrate is provided with a plurality of mounting areas, and an isolation groove is formed between any two adjacent mounting areas of the mounting substrate;
and the driving power modules are arranged in the corresponding mounting areas and are isolated from each other through the isolation grooves.
2. The smart power module of claim 1 wherein each phase of the drive power module comprises:
mounting a carrier;
the power switch tube is arranged on the base island of the mounting carrier, and the driving chip is stacked on the power switch tube; and the number of the first and second groups,
and the mounting carrier, the driving chip and the power switch tube are packaged in the plastic packaging part.
3. The intelligent power module as recited in claim 2, wherein each of the power switching transistors comprises a controlled terminal pad, each of the driver chips comprises a driving terminal pad;
the driving end welding pad of the driving chip is connected with the controlled end welding pad of the power switch tube through a metal binding wire;
the power switch tube and the driving chip are fixedly connected through an insulating adhesive.
4. The smart power module as claimed in claim 2, further comprising an insulating medium filled between the driving power modules through a packaging mold to form a packaging case.
5. The intelligent power module as claimed in claim 4, wherein the plastic package part of the driving power module is protruded outside the package housing to form a boss;
the intelligent power module is further provided with a radiator, and the radiator is arranged on the boss.
6. The smart power module of claim 1 further comprising a housing, the mounting substrate and the plurality of drive power modules being disposed within the housing, the housing being filled with an insulating medium.
7. The smart power module of claim 1 wherein each of said isolation slots are in communication with one another.
8. The intelligent power module according to any one of claims 1 to 7, wherein the number of the driving power modules is four, and four driving power modules constitute a single-phase three-level intelligent power module;
or the number of the driving power modules is twelve, and twelve driving power modules form a three-phase three-level intelligent power module.
9. The intelligent power module as recited in claim 8, wherein each phase of the three-level intelligent power module comprises an upper leg drive power module, a lower leg drive power module, and a middle leg drive power module, the upper leg drive power module being arranged in series with the lower leg drive power module; the middle bridge arm driving power module is connected with the common end of the upper bridge arm driving power module and the common end of the lower bridge arm driving power module.
10. An air conditioner characterized by comprising the smart power module as recited in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201911212350.3A CN110911357A (en) | 2019-11-28 | 2019-11-28 | Intelligent power module and air conditioner |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911212350.3A CN110911357A (en) | 2019-11-28 | 2019-11-28 | Intelligent power module and air conditioner |
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| CN110911357A true CN110911357A (en) | 2020-03-24 |
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| CN201911212350.3A Pending CN110911357A (en) | 2019-11-28 | 2019-11-28 | Intelligent power module and air conditioner |
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| WO2022036993A1 (en) * | 2020-08-21 | 2022-02-24 | 广东美的白色家电技术创新中心有限公司 | Smart power module |
| WO2022127008A1 (en) * | 2020-12-17 | 2022-06-23 | 广东美的制冷设备有限公司 | Device for controlling air conditioner, and air conditioner |
| CN114665718A (en) * | 2020-12-24 | 2022-06-24 | 新疆金风科技股份有限公司 | Solid-state transformer power unit and transformer substation |
| CN114679033A (en) * | 2020-12-24 | 2022-06-28 | 新疆金风科技股份有限公司 | Energy router power unit and transformer substation |
| CN114679032A (en) * | 2020-12-24 | 2022-06-28 | 新疆金风科技股份有限公司 | Energy router power unit and transformer substation |
| CN114679031A (en) * | 2020-12-24 | 2022-06-28 | 新疆金风科技股份有限公司 | Solid-state transformer power unit and transformer substation |
| WO2024183515A1 (en) * | 2023-03-09 | 2024-09-12 | 华为数字能源技术有限公司 | Power converter, packaging structure and heat dissipation structure |
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| WO2024183515A1 (en) * | 2023-03-09 | 2024-09-12 | 华为数字能源技术有限公司 | Power converter, packaging structure and heat dissipation structure |
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Application publication date: 20200324 |