CN110890393A - Micro light emitting diode display panel - Google Patents
Micro light emitting diode display panel Download PDFInfo
- Publication number
- CN110890393A CN110890393A CN201910616515.7A CN201910616515A CN110890393A CN 110890393 A CN110890393 A CN 110890393A CN 201910616515 A CN201910616515 A CN 201910616515A CN 110890393 A CN110890393 A CN 110890393A
- Authority
- CN
- China
- Prior art keywords
- display panel
- micro
- led display
- substrate
- area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 239000010409 thin film Substances 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 26
- 238000005516 engineering process Methods 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 14
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 6
- 150000004706 metal oxides Chemical class 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- -1 acryl Chemical group 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 101001045744 Sus scrofa Hepatocyte nuclear factor 1-beta Proteins 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Device Packages (AREA)
Abstract
A micro light emitting diode display panel comprises a plurality of micro light emitting diodes; the substrate is used for bearing the micro light-emitting diode, and the surface of the substrate is divided into a plurality of sub-areas; and a plurality of thin film flip chip packages respectively arranged on the surface of the sub-area, and a plurality of drivers respectively arranged on the thin film flip chip packages. The technical scheme of the invention can effectively reduce the load of the driver so as to realize the single large-size high-resolution micro light-emitting diode display panel.
Description
Technical Field
The present invention relates to a display panel, and more particularly, to a micro light emitting diode (micro led) display panel.
Background
A micro light emitting diode (micro LED, mLED or mu LED) display panel is one of flat panel displays (flat panel displays), and is composed of individual micro (micro) light emitting diodes with the size grade of 1-10 micrometers. Compared with the conventional liquid crystal display panel, the micro light emitting diode display panel has larger contrast ratio and faster response time, and consumes less power. Although micro light emitting diodes have the same characteristics of low power consumption as Organic Light Emitting Diodes (OLEDs), micro light emitting diodes have higher brightness, higher light emission efficiency and longer lifetime than organic light emitting diodes because they use iii-v diode technology (e.g., gan).
An active driving method using a Thin Film Transistor (TFT) is a commonly used driving mechanism, which can be combined with a micro light emitting diode to manufacture a display panel. However, the thin film transistor is manufactured by a Complementary Metal Oxide Semiconductor (CMOS) process, and the micro light emitting diode is manufactured by a flip chip (flip chip) technology, which causes a thermal mismatch problem and the manufacturing process of the thin film transistor is complicated. In low gray scale display, the driving current is very small, which affects the gray scale display by the leakage current of the micro-LED.
Passive drive is another drive mechanism. In a conventional passive driving display panel, the column driving circuit and the row driving circuit are disposed at the edge of the display panel. However, when the size of the display panel becomes large or the resolution becomes high, the output load of the driver becomes excessive, and the display panel cannot be normally driven due to the excessive delay time. Therefore, the passive driving mechanism is not suitable for a large-sized micro led display panel.
Therefore, it is desirable to provide a novel micro-led display panel, especially a large-sized or high-resolution display panel, which retains the advantages of the micro-leds and improves the disadvantages of the conventional driving scheme.
Disclosure of Invention
In view of the foregoing, an objective of the present invention is to provide a micro led display panel, which effectively reduces the load of a driver to realize a single large-sized high-resolution micro led display panel.
The purpose of the invention and the technical problem to be solved are realized by adopting the following technical scheme.
According to an embodiment of the invention, the micro light emitting diode display panel comprises a plurality of micro light emitting diodes, a substrate and a plurality of chip-on-film packages. The substrate is used for bearing the micro light-emitting diode, and the surface of the substrate is divided into a plurality of sub-areas. The thin film flip chip packages are respectively arranged on the surfaces of the sub-areas, and the drivers are respectively arranged on the thin film flip chip packages.
The object of the present invention and the technical problems solved thereby can be further achieved by the following technical measures.
Preferably, the chip-on-film package includes a flexible printed circuit board including at least a main region and a bonding region, and the driver is disposed in the main region.
Preferably, the size of the bonding region is smaller than that of the main region, and the bonding region is adjacent to one side of the main region.
Preferably, the pins of the driver are disposed on four sides of the driver, and the pins are electrically connected to the finger connectors of the bonding area in a winding manner.
Preferably, the bonding region is bent along the boundary between the bonding region and the main region and then bonded to the substrate.
Preferably, the flexible printed circuit board stands on the substrate, and the angle between the flexible printed circuit board and the substrate is between 0 and 180 degrees.
Preferably, the micro led display panel is a back-side light emitting micro led display panel, and the light generated by the micro led display panel is emitted downward from the back side of the substrate.
Preferably, the substrate comprises an insulating material.
Preferably, the substrate comprises glass or acryl.
Preferably, the chip on film package includes a main region, a first bonding area and a second bonding area, and the first bonding area and the second bonding area are respectively adjacent to two opposite sides of the main region.
Preferably, the first bonding area uses an outer lead bonding technique, and the second bonding area uses an inner lead bonding technique.
Preferably, some of the drivers are located in the edge sub-area using chip-on-glass technology or chip-on-film technology, and others of the drivers are located in the center sub-area using chip-on-film technology.
Compared with the prior art, the invention has obvious advantages and beneficial effects. By the technical scheme, the micro light-emitting diode display panel at least has the following advantages: the invention relates to a micro light emitting diode display panel, in particular to a large-size or high-resolution display panel, which can keep the advantages of a micro light emitting diode and improve the defects of the traditional driving mechanism. Specifically, the present invention effectively reduces the load of the driver to realize a single large-sized high-resolution micro-led display panel.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.
Drawings
Fig. 1A is a top view of a micro led display panel according to an embodiment of the invention.
FIG. 1B shows a side view of the micro LED display panel of FIG. 1A.
Fig. 2 is a schematic diagram of a micro led display panel with a passive driving method.
FIG. 3 is a cross-sectional view of a front-emitting micro LED display panel according to a first specific embodiment of the present invention.
FIG. 4 shows a cross-sectional view of a back-side illuminated micro-LED display panel in accordance with a second specific embodiment of the present invention.
Fig. 5 illustrates a current-voltage curve of a micro light emitting diode.
Fig. 6 shows a system block diagram of a drive according to an embodiment of the invention.
Fig. 7A is a schematic diagram of a chip-on-film package of a driver according to an embodiment of the invention.
Fig. 7B is a side view of the chip-on-film package of fig. 7A disposed on a substrate of a micro led display panel according to an embodiment of the invention.
Fig. 8A to 8C respectively show a top view, a front view and a right side view of a chip on film of a micro led display panel.
Fig. 9A to 9C respectively show a top view, a front view and a right side view of a micro led display panel using a wafer glass technology for disposing drivers.
Fig. 10A is a schematic diagram of a chip-on-film package of a driver according to another embodiment of the invention.
Fig. 10B is a side view of the chip-on-film package of fig. 10A, disposed on the substrate and the printed circuit board of the micro led display panel according to the embodiment of the invention.
FIG. 11 is a top view of a micro LED display panel.
[ description of main element symbols ]
100: micro light emitting diode display panel
101: sub-region
300: front-side luminous micro-LED display panel
400: back-side-emitting micro-LED display panel
11: substrate
11B: printed circuit board
12: driver
120: driving circuit
121: row driving circuit
1211: row conductor
122: column driving circuit
1221: column conductor
123: low dropout voltage regulator
13: time sequence controller
14: micro light emitting diode
14R: red micro-LED
14G: green micro light-emitting diode
14B: blue micro light-emitting diode
15: wiring layer
16: photoresist fault
17: light guide layer
18: cover plate
700: thin film flip chip package
700B: thin film flip chip package
711: main area
712: bonding region
712A: first bonding region
712B: second bonding region
713: pin
714: finger connector
800: micro light emitting diode display panel
900: micro light emitting diode display panel
1100: micro light emitting diode display panel
VDDA: system power supply
VR: voltage-stabilized power supply
C: voltage-stabilizing capacitor
TCON: time sequence controller
LDO: low dropout voltage regulator
OLB: outer lead bonding
ILB: inner lead bonding
COG: wafer glass
COF: thin film flip chip
Detailed Description
Fig. 1A shows a top view of a micro light emitting diode (micro led) display panel 100 according to an embodiment of the invention, and fig. 1B shows a side view of the micro led display panel 100 of fig. 1A. The structure of the micro led display panel 100 of the present embodiment is preferably suitable for a large-sized high-resolution display panel, such as a display panel with a resolution of 3840RGBx 2160. In the specification, the size of the micro light emitting diode is 1-10 microns. However, it is smaller due to the application field of the product or the development of the future technology. In the present specification, a "large-sized" display panel is defined as a display panel of 10 inches or more according to the current practice in the industry. However, the definition of the "large-sized" display panel may be changed according to the application field of the product or the development of the future technology. In the present specification, a "high resolution" display panel is defined as a display panel having a scanning line of 1080 or more, according to the conventional practice in the industry. However, the definition of "high resolution" display panel is also changed by the application field of the product or the development of the future technology.
In the present embodiment, the micro led display panel 100 includes a substrate 11 for carrying a plurality of micro leds (not shown). The substrate 11 is preferably made of an insulator (e.g., glass, acryl), and may be made of other materials suitable for carrying micro-leds.
According to one of the features of the present embodiment, the surface of the substrate 11 is divided into a plurality of sub-regions 101. The divided sub-regions 101 are not physically cut, and the substrate 11 is not formed by integrating a plurality of small blocks, so that the substrate 11 is a complete and uncut entity. In other words, the micro led display panel 100 of the present embodiment is a single (or hollow) or undivided (undivided) display panel. Fig. 1A shows only a simplified sub-area 101 division example. Taking the micro led display panel 100 with a resolution of 3840RGBx2160 as an example, the substrate 11 can be divided into 80 × 54 sub-regions 101, and each sub-region 101 has a resolution of 48RGBx40, but can be divided into more or less sub-regions 101.
According to another feature of the present embodiment, the micro led display panel 100 includes a plurality of drivers (drivers) 12 respectively disposed on the surface (e.g., the top surface) of the sub-region 101. The driver 12 shown in fig. 1A is provided at the center of the surface of the corresponding sub-region 101, but is not limited thereto. Fig. 1A illustrates that each sub-region 101 is provided with a driver 12, however, in other embodiments, each sub-region 101 may also be provided with a plurality of drivers 12. The driver 12 of the present embodiment can be fabricated as an integrated circuit in a chip form, and the driver 12 is bonded (bond) to the surface of the sub-region 101 by a Surface Mount Technology (SMT), such as a chip-on-glass (COG) or a flip chip (flip chip) technology. In one example, the driver 12 and the micro light emitting diode are disposed on the same surface of the sub-region 101 of the substrate 11.
The micro led display panel 100 of the present embodiment further includes a plurality of Timing Controllers (TCONs) 13 electrically connected to the substrate 11 by wires (e.g., flexible printed circuit (fpc) (not shown), and electrically connected to the corresponding drivers 12 by wires (not shown) disposed on the surface of the substrate 11. In the present embodiment, one timing controller 13 may be electrically connected to at least two drivers 12. In other words, the number of the timing controller 13 is less than the number of the drivers 12. The timing controller 13 can be directly connected to the corresponding drivers 12 by wires; or connected to one driver 12 by wires, and then connected to another driver 12 by wires after signal buffering.
According to another feature of the present embodiment, the micro led display panel 100 employs a passive driving method to drive the micro leds. Fig. 2 shows a schematic diagram of a micro led display panel 100 in a passive driving mode. The timing controller 13 transmits timing control signals and display data signals to the driver 12. The driver 12 includes a row (column) driving circuit 121 and a column (row or scan) driving circuit 122, wherein the row driving circuit 121 is connected to a row lead 1211 and transmits a row driving signal to a first electrode (e.g., an anode) of the micro led 14 in the same row, and the column driving circuit 122 is connected to a column lead 1221 and transmits a column driving signal to a second electrode (e.g., a cathode) of the micro led 14 in the same column. In the present embodiment, the column driving circuit 121 and the row driving circuit 122 are fabricated as a single integrated circuit.
According to the above embodiment, since the substrate 11 of the micro led display panel 100 is divided into the sub-regions 101, and each sub-region 101 is provided with the corresponding driver 12, the load of the row driving circuit 121 and the column driving circuit 122 can be effectively reduced, so as to realize a single large-sized high-resolution micro led display panel. In addition, compared to an active driving method using a Thin Film Transistor (TFT), the micro led display panel 100 of the present embodiment adopts a passive driving method to drive the micro leds 14, so that the manufacturing process of the display panel can be simplified, the turn-on time of the micro leds 14 can be shortened, the driving current can be increased, and the influence of the leakage current of the micro leds 14 on the gray scale display can be effectively reduced.
Fig. 3 is a cross-sectional view of a front-emitting micro led display panel 300 according to a first specific embodiment of the present invention. In the present embodiment, the micro light emitting diodes 14 and the driver 12 are disposed on the top surface of the substrate 11. The light generated by the micro-leds 14 is mainly emitted upward from the top surface of the substrate 11 (i.e., front side emission), as indicated by the arrows.
As illustrated in fig. 3, each pixel includes a red micro-led 14R, a green micro-led 14G, and a blue micro-led 14B. A wiring layer 15 is disposed between the surface (e.g., top surface) of the substrate 11 and the micro leds 14 and the driver 12 for electrically connecting the driver 12, the micro leds 14 and the timing controller 13. Between the micro-leds 14 of adjacent pixels, a light blocking (light blocking) layer 16 is formed above the wiring layer 15. The material of the photoresist layer 16 in this embodiment may be a Black Matrix (BM) or other suitable materials capable of shielding light. In one embodiment, the light blocking layer 16 may be formed between the red micro-led 14R, the green micro-led 14G and the blue micro-led 14B of the same pixel, but it is not necessary to form them.
The red micro light emitting diode 14R, the green micro light emitting diode 14G and the blue micro light emitting diode 14B may further have a light guiding layer 17 thereon. The front-emitting micro led display panel 300 of the present embodiment further includes a cover plate 18 disposed on the bottom surface of the substrate 11. The cover plate 18 of the present embodiment may be made of opaque material.
Fig. 4 is a cross-sectional view of a backside-illuminated (backsides-illuminating) micro led display panel 400 according to a second specific embodiment of the present invention. In the present embodiment, the micro light emitting diodes 14 and the driver 12 are disposed on the top surface of the substrate 11. The light generated by the micro-leds 14 is mainly emitted downward from the back surface of the substrate 11 (i.e., back-side emission), as indicated by the arrows.
As illustrated in fig. 4, each pixel includes a red micro-led 14R, a green micro-led 14G, and a blue micro-led 14B. Between the micro light emitting diodes 14 of adjacent pixels, a light blocking layer 16 is formed on the surface (e.g., top surface) of the substrate 11. The material of the photoresist layer 16 in this embodiment may be a Black Matrix (BM) or other suitable material capable of blocking light. A wiring layer 15 is disposed above the photoresist layer 16 for electrically connecting the driver 12, the micro-LED 14 and the timing controller 13. In one embodiment, the light blocking layer 16 may be formed between the red micro-led 14R, the green micro-led 14G and the blue micro-led 14B of the same pixel, but it is not necessary to form them.
The red micro light emitting diode 14R, the green micro light emitting diode 14G and the blue micro light emitting diode 14B may further have a light guiding layer 17 thereon. The back-illuminated micro led display panel 400 of the present embodiment further includes a cover plate 18 disposed above the driver 12, the routing layer 15, the photoresist layer 16, and the light guide layer 17. The cover plate 18 of the present embodiment may be made of opaque material.
Fig. 5 illustrates a current-voltage curve of the micro-leds 14. When the operating voltage is greater than the turn-on voltage Vf (e.g., 3 v), the current is greater than the predetermined current value, so that the micro led 14 can be normally operated to light up. In the micro led display panel 100 shown in fig. 1A, the rated system power of the driver 12 is VDDA. However, due to the impedance in the metal lines for transmitting power, a voltage drop Δ V is generated at the center of the micro led display panel 100. Therefore, the driver 12 actually obtains the power value of VDDA- Δ V at the center of the micro LED display panel 100, and the driver 12 obtains the power value of VDDA at the edge of the micro LED display panel 100. For example, assuming that the voltage drop Δ V is 1V and the turn-on voltage Vf is 3V, VDDA-1>3 is satisfied if the driver 12 is to operate normally, and VDDA is therefore greater than 4V (e.g., 5V is used). In this case, the driver 12 may be fabricated using a low voltage Metal Oxide Semiconductor (MOS) fabrication process.
However, as the number of micro-leds 14 increases, the required current becomes larger, the voltage drop Δ V increases more significantly, for example, to 4 volts. For the driver 12 to operate properly, VDDA-4>3 is satisfied, and VDDA is therefore greater than 7 volts (e.g., 8 volts is used). In this case, the driver 12 needs to be manufactured by a high voltage Metal Oxide Semiconductor (MOS) manufacturing process, so that the area of the circuit chip is significantly increased, which is not favorable for manufacturing a large-sized or high-resolution (e.g., 3840RGBx2160) display panel. To solve the above problem, a novel driver 12 architecture is proposed as follows.
Fig. 6 shows a system block diagram of the drive 12 of an embodiment of the present invention. In the present embodiment, the driver 12 includes a low-dropout (LDO) regulator 123, which receives the system power VDDA to generate a regulated power VR (e.g., 5 volts) for supplying to the driving circuit 120. The Low Dropout (LDO) regulator 123 of the present embodiment may be implemented using the circuit design of a conventional Low Dropout (LDO) regulator, and the details thereof are therefore omitted. The driving circuit 120 of the present embodiment can include a row driving circuit 121 and a column driving circuit 122. The Low Dropout (LDO) regulator 123 is a kind of direct current linear regulator (DC linear regulator), and allows the regulator VR to be very close to the system power supply VDDA. Compared to a switching regulator (switching regulator), the low dropout regulator 123 has the advantages of small area, simple design, and no switching noise. In the present embodiment, a voltage stabilizing capacitor (smoothing capacitor) C may be connected between the voltage stabilizing power supply VR and the ground for filtering out high frequency noise. The stabilivolt capacitor C can be formed using the fabrication process technology of the metal layer in the display panel fabrication process without additional fabrication process technology.
According to the driver 12 of the present embodiment, only the Low Dropout (LDO) regulator 123 needs to be manufactured using a high voltage (e.g., greater than 8 volts) Metal Oxide Semiconductor (MOS) manufacturing process, and the rest of the driving circuit 120 can be manufactured using a low voltage (e.g., less than 8 volts) Metal Oxide Semiconductor (MOS) manufacturing process. In contrast to the architecture described above, which does not use a Low Dropout (LDO) regulator 123, the entire driver 12 is fabricated using a high voltage Metal Oxide Semiconductor (MOS) fabrication process. Therefore, the driver 12 of the present embodiment can greatly reduce the circuit area, which is beneficial for manufacturing large-sized or high-resolution display panels.
Fig. 7A shows a schematic diagram of a chip-on-film (COF) package (package)700 of a driver 12 (e.g., a Display Driver Integrated Circuit (DDIC)) according to an embodiment of the invention. The chip-on-film package 700 may include a Flexible Printed Circuit Board (FPCB)71, which may include at least one main region 711 and a bonding region 712. The size of the junction region 712 is smaller than the main region 711, and the junction region 712 is adjacent to one side of the main region 711.
The chip-on-film package 700 of the present embodiment may include a driver 12 disposed in the main area 711. The chip (e.g., driver 12) has pins 713, which are disposed on four sides of the chip. The pins 713 of the chip are electrically routed to finger (finger) connectors 714 of the land 712 via traces of the main region 711. Thereby, the pins 713 on the four sides of the chip are thus converted into finger connectors 714 on the single side (i.e., the bonding area 712) of the FPC 71.
Fig. 7B is a side view of the chip-on-film package 700 of fig. 7A disposed on the substrate 11 of the micro led display panel according to the embodiment of the invention. In the present embodiment, the bonding region 712 is bent along the boundary between the bonding region 712 and the main region 711 and then bonded to the substrate 11. Thereby, the driver 12 is suspended above the substrate 11. Although fig. 7B illustrates the main area 711 of the fpc 71 standing at a right angle on the substrate 11, generally, the angle between the fpc 71 and the substrate 11 may be between 0 and 180 degrees.
Fig. 8A to 8C respectively show a top view, a front view and a right side view of the chip-on-film package 700 of the micro led display panel 800. In the present embodiment, the micro led display panel 800 is preferably a back-light emitting micro led display panel (as illustrated in fig. 4), and the generated light is emitted downward from the back surface of the substrate 11.
In the present embodiment, the micro led display panel 800 may include a substrate 11 for carrying a plurality of micro leds (not shown). The substrate 11 is preferably made of an insulator (e.g., glass, Acrylic), and may be made of other materials suitable for carrying micro-leds. The surface of the substrate 11 is divided into a plurality of sub-regions 101. According to one feature of the present embodiment, the micro led display panel 800 may include a plurality of flip-chip on film packages 700 respectively disposed on the upper surfaces of the sub-regions 101 of the substrate 11. The micro led display panel 800 of the present embodiment may include a plurality of drivers 12 respectively disposed in the main area 711 of the chip-on-film package 700. As shown in fig. 7B, the chip-on-film package 700 is mounted (or bonded) on the substrate 11 via the bonding area 712, such that the driver 12 is suspended above the substrate 11. Since the bonding area 712 requires a smaller area than the main area 711 or the driver 12, the COF package 700 occupies only a very small area of the substrate 11, so that a precious area of the substrate 11 can be provided for more micro LEDs.
Compared to other embodiments in which the chip-on-glass (COG) technology is used to directly mount the pins of the chip (e.g., the driver 12) on the substrate 11, the chip-on-film package 700 of the present embodiment occupies a smaller area than the COG embodiment. Fig. 9A to 9C respectively show a top view, a front view and a right side view of a micro led display panel 900 using a Chip On Glass (COG) technology for disposing the driver 12. Since the driver 12 is directly disposed on the substrate 11, the driver 12 occupies a considerable area of the substrate 11, and thus, no extra area is left for disposing more micro leds. Accordingly, the driver 12 needs to be made smaller, but this increases the technical difficulty and cost. In addition, the COF package 700 can overcome the voltage drop effect caused by the long wires of the large-sized micro LED display panel. Furthermore, the width of the wiring can be reduced, thereby effectively improving the resolution of the micro light emitting diode display panel.
Fig. 10A is a schematic diagram of a chip-on-film package 700B of a driver 12 according to another embodiment of the invention. The COF package 700B is similar to the COF package 700 of FIG. 7A, except that the FPC 71 of the COF package 700B may include a main region 711, a first bonding area 712A and a second bonding area 712B. The first bonding region 712A and the second bonding region 712B are adjacent to two opposite sides of the main region 712, respectively. In the present embodiment, the first bonding region 712A uses an Outer Lead Bonding (OLB) technique to bond to glass, and the second bonding region 712B uses an Inner Lead Bonding (ILB) technique to bond to a printed circuit board.
Fig. 10B is a side view of the chip-on-film package 700B of fig. 10A, which is disposed on the substrate 11 (e.g., glass) of the micro led display panel according to the embodiment of the invention via the first bonding area 712A, and disposed on the printed circuit board 11B (e.g., flexible printed circuit board) via the second bonding area 712B. In one example, the printed circuit board 11B is electrically connected to a control system, such as a Timing Controller (TCON).
Fig. 11 shows a top view of the micro led display panel 1100. In the present embodiment, drivers (not shown) may be disposed in the (non-diagonal) edge sub-area 101 using Chip On Glass (COG) or Chip On Film (COF) technology, while other drivers may be disposed in the (diagonal) central sub-area 101 using Chip On Film (COF) technology. Thereby, the drivers of the central sub-area 101 can be connected to the timing controller.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the scope of the present invention; it is intended that all such equivalent changes and modifications be included within the scope of the present invention as defined by the appended claims.
Claims (12)
1. A micro light emitting diode display panel, comprising:
a plurality of micro light emitting diodes;
the substrate is used for bearing the micro light-emitting diode, and the surface of the substrate is divided into a plurality of sub-areas; and
and the plurality of thin film flip chip packages are respectively arranged on the surface of the secondary area, and the plurality of drivers are respectively arranged on the thin film flip chip packages.
2. The micro-led display panel of claim 1, wherein: the COF package comprises a flexible printed circuit board (FPC) including at least one main region and a bonding region, and the driver is disposed in the main region.
3. The micro-led display panel of claim 2, wherein: the size of the bonding area is smaller than that of the main area, and the bonding area is adjacent to one side of the main area.
4. The micro-led display panel of claim 2, wherein: the pins of the driver are arranged on four sides of the driver, and the pins are electrically wound to the finger connector of the joint area.
5. The micro-led display panel of claim 2, wherein: wherein the bonding region is bent along the boundary between the bonding region and the main region and then bonded to the substrate.
6. The micro-led display panel of claim 2, wherein: the flexible printed circuit board stands on the substrate, and the angle between the flexible printed circuit board and the substrate is between 0 and 180 degrees.
7. The micro-led display panel of claim 1, wherein: the micro light-emitting diode display panel is a back-side light-emitting micro light-emitting diode display panel, and light generated by the micro light-emitting diode display panel is emitted downwards from the back side of the substrate.
8. The micro-led display panel of claim 1, wherein: wherein the substrate comprises an insulating material.
9. The micro-led display panel of claim 8, wherein: wherein the substrate comprises glass or acrylic.
10. The micro-led display panel of claim 1, wherein: the chip-on-film package comprises a main area, a first bonding area and a second bonding area, wherein the first bonding area and the second bonding area are respectively adjacent to two opposite sides of the main area.
11. The micro-led display panel of claim 10, wherein: wherein the first bonding region uses an outer lead bonding technique and the second bonding region uses an inner lead bonding technique.
12. The micro-led display panel of claim 1, wherein: some of the drivers are located in the edge sub-area using chip-on-glass technology or chip-on-film technology, while others are located in the center sub-area using chip-on-film technology.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/128,287 US10529701B2 (en) | 2016-09-26 | 2018-09-11 | MicroLED display panel |
| US16/128,287 | 2018-09-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110890393A true CN110890393A (en) | 2020-03-17 |
Family
ID=69745832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910616515.7A Pending CN110890393A (en) | 2018-09-11 | 2019-07-09 | Micro light emitting diode display panel |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110890393A (en) |
| TW (1) | TWI711199B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113176688A (en) * | 2021-04-26 | 2021-07-27 | Tcl华星光电技术有限公司 | Miniature light-emitting diode backlight driving assembly and display panel |
| CN113257173A (en) * | 2021-03-29 | 2021-08-13 | 北海惠科光电技术有限公司 | Active light-emitting device, display panel and splicing display device |
| CN114758610A (en) * | 2020-12-28 | 2022-07-15 | 矽创电子股份有限公司 | Driving structure of display panel |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI733551B (en) | 2020-08-10 | 2021-07-11 | 錼創顯示科技股份有限公司 | Micro led display |
| CN112967660B (en) * | 2020-08-25 | 2022-03-01 | 重庆康佳光电技术研究院有限公司 | Display control method and device and display equipment |
| US11810499B2 (en) * | 2022-01-28 | 2023-11-07 | Prilit Optronics, Inc. | Micro-light-emitting diode display panel |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2453561Y (en) * | 2000-10-27 | 2001-10-10 | 陈财福 | Soft type circuit plate connector |
| US20030060062A1 (en) * | 2001-09-27 | 2003-03-27 | Olympus Optical Co., Ltd. | Flexible Printed Circuit Board Having Conductor Lands Formed Thereon |
| CN201285648Y (en) * | 2008-09-16 | 2009-08-05 | 奇信电子股份有限公司 | Improved structure for display |
| CN101503025A (en) * | 2008-02-08 | 2009-08-12 | 精工爱普生株式会社 | Liquid ejecting head and liquid ejecting apparatus |
| CN103325317A (en) * | 2013-05-15 | 2013-09-25 | 京东方科技集团股份有限公司 | Display panel and display device thereof |
| CN107422553A (en) * | 2017-09-05 | 2017-12-01 | 深圳市华星光电技术有限公司 | A kind of array base palte and display panel |
| CN107871454A (en) * | 2016-09-26 | 2018-04-03 | 启端光电股份有限公司 | micro light emitting diode display panel |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3158583B1 (en) * | 2014-06-18 | 2022-01-26 | X Display Company Technology Limited | Micro assembled led displays |
| US9930277B2 (en) * | 2015-12-23 | 2018-03-27 | X-Celeprint Limited | Serial row-select matrix-addressed system |
| KR102583781B1 (en) * | 2016-11-30 | 2023-10-05 | 엘지디스플레이 주식회사 | Chip on film and display device comprising the same |
-
2019
- 2019-06-28 TW TW108122743A patent/TWI711199B/en active
- 2019-07-09 CN CN201910616515.7A patent/CN110890393A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2453561Y (en) * | 2000-10-27 | 2001-10-10 | 陈财福 | Soft type circuit plate connector |
| US20030060062A1 (en) * | 2001-09-27 | 2003-03-27 | Olympus Optical Co., Ltd. | Flexible Printed Circuit Board Having Conductor Lands Formed Thereon |
| CN101503025A (en) * | 2008-02-08 | 2009-08-12 | 精工爱普生株式会社 | Liquid ejecting head and liquid ejecting apparatus |
| CN201285648Y (en) * | 2008-09-16 | 2009-08-05 | 奇信电子股份有限公司 | Improved structure for display |
| CN103325317A (en) * | 2013-05-15 | 2013-09-25 | 京东方科技集团股份有限公司 | Display panel and display device thereof |
| CN107871454A (en) * | 2016-09-26 | 2018-04-03 | 启端光电股份有限公司 | micro light emitting diode display panel |
| CN107422553A (en) * | 2017-09-05 | 2017-12-01 | 深圳市华星光电技术有限公司 | A kind of array base palte and display panel |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114758610A (en) * | 2020-12-28 | 2022-07-15 | 矽创电子股份有限公司 | Driving structure of display panel |
| CN113257173A (en) * | 2021-03-29 | 2021-08-13 | 北海惠科光电技术有限公司 | Active light-emitting device, display panel and splicing display device |
| CN113176688A (en) * | 2021-04-26 | 2021-07-27 | Tcl华星光电技术有限公司 | Miniature light-emitting diode backlight driving assembly and display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI711199B (en) | 2020-11-21 |
| TW202011629A (en) | 2020-03-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10356858B2 (en) | MicroLED display panel | |
| CN110890393A (en) | Micro light emitting diode display panel | |
| CN109994585B (en) | Light emitting diode chip and micro display device | |
| US10529701B2 (en) | MicroLED display panel | |
| US11444066B2 (en) | Display apparatus and manufacturing method thereof | |
| US11430705B2 (en) | Display panel and method of manufacturing thereof | |
| CN109686720A (en) | Flip chip encapsulating structure and display device | |
| US12132037B2 (en) | Display apparatus | |
| US10199362B1 (en) | MicroLED display panel | |
| EP3499592B1 (en) | Electronic device | |
| CN114747013A (en) | Display device and method for manufacturing the same | |
| US11719974B2 (en) | Self-luminous body for display apparatus, self-luminous display apparatus, backlight, liquid crystal display apparatus, and method for manufacturing self-luminous body for display apparatus | |
| CN112567522B (en) | Display device using semiconductor light emitting diode and method of manufacturing the same | |
| KR20190071277A (en) | Light emitting device, and micor display device | |
| US20230197898A1 (en) | Display Device | |
| US20230055746A1 (en) | Displays with dual-pixel drivers | |
| US20240027834A1 (en) | Backlight source and display device | |
| US20230307597A1 (en) | Display device using micro led | |
| KR102101422B1 (en) | Low power display board with surplus voltage control | |
| TWI641108B (en) | Microled display panel | |
| EP4435874A1 (en) | Light-emitting diode | |
| US12061395B2 (en) | Flat lighting device and display device using light-emitting diode | |
| US20240332475A1 (en) | Display device | |
| US20240379902A1 (en) | Light-emitting diode | |
| KR20240065862A (en) | Display device including semiconductor light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200317 |