CN110832620A - Adhesive sheet for stealth dicing and method for manufacturing semiconductor device - Google Patents
Adhesive sheet for stealth dicing and method for manufacturing semiconductor device Download PDFInfo
- Publication number
- CN110832620A CN110832620A CN201880044028.1A CN201880044028A CN110832620A CN 110832620 A CN110832620 A CN 110832620A CN 201880044028 A CN201880044028 A CN 201880044028A CN 110832620 A CN110832620 A CN 110832620A
- Authority
- CN
- China
- Prior art keywords
- adhesive sheet
- stealth dicing
- adhesive
- semiconductor wafer
- energy ray
- Prior art date
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- 238000002360 preparation method Methods 0.000 description 1
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- 239000002516 radical scavenger Substances 0.000 description 1
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- 238000004381 surface treatment Methods 0.000 description 1
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Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
Landscapes
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Adhesive Tapes (AREA)
Abstract
The present invention provides an adhesive sheet 1 for stealth dicing, which is used for cutting and separating a semiconductor wafer at least having a modified layer formed therein into chips in an environment of-20 ℃ to 10 ℃, and which comprises: when the adhesive sheet 1 for stealth dicing is bonded to a silicon wafer via the adhesive layer 12 between the substrate 11 and the adhesive layer 12 laminated on one surface side of the substrate 11, the shear force at 0 ℃ at the interface between the adhesive layer 12 and the silicon wafer is 190N/(3 mm. times.20 mm) or more and 400N/(3 mm. times.20 mm) or less. Even when the obtained chip size is small, the adhesive sheet for stealth dicing 1 can favorably singulate a semiconductor wafer into chips by cooling and spreading.
Description
Technical Field
The present invention relates to an adhesive sheet for stealth dicing used for stealth dicing (registered trademark) processing, and a method for manufacturing a semiconductor device using the same.
Background
In the case of manufacturing a chip-shaped semiconductor device from a semiconductor wafer, conventionally, a blade dicing process has been generally performed in which the semiconductor wafer is cut by a rotary blade to obtain chips while spraying a liquid for cleaning. However, in recent years, stealth dicing processing capable of dry dicing into chips has been employed. As an example of the stealth dicing process, a semiconductor wafer attached to a dicing sheet is irradiated with a laser beam having a large aperture (NA) to minimize damage to the vicinity of the surface of the semiconductor wafer, and a modified layer is formed in advance inside the semiconductor wafer. Then, by expanding the dicing sheet, a force is applied to the semiconductor wafer to cut it and separate it into individual chips.
In recent years, it has been required to laminate a chip manufactured as described above with another chip or to bond the chip to a film substrate. In some fields, the front-up (face-up) type package in which a circuit of a chip is connected to a circuit on another chip or a substrate Via a wire is changed to a Flip chip (TSV) package in which an electrode formation surface of a chip provided with a protruding electrode is opposed to a circuit on another chip or a substrate and directly connected to the other chip or the substrate Via the electrode, or a Through Silicon Via (TSV). In accordance with the requirements for lamination and adhesion of chips in such flip chip packaging, a method of fixing an electrode-carrying chip to another chip or a film substrate using an adhesive has been proposed.
In order to facilitate the application to such an application, it has been proposed that, in the course of the above-described manufacturing method, a film-like adhesive is laminated on the electrode-forming surface of an electrode-carrying semiconductor wafer or an electrode-carrying modified semiconductor wafer having a dicing sheet attached to the surface opposite to the electrode-forming surface, and chips with electrodes divided in a spreading step are provided with an adhesive layer on the electrode-forming surface. As the adhesive layer, an adhesive Film called a Die Attach Film (DAF) or an insulating adhesive Film (NCF) is used.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2005-019962
Disclosure of Invention
Technical problem to be solved by the invention
Since the DAF and NCF have the characteristic of embrittlement in a low-temperature region, the above expansion is often performed in a low-temperature environment of about-20 to 10 ℃ in order to improve the separability of the DAF and NCF.
In recent years, miniaturization of products equipped with semiconductor devices and development of MEMS (Micro electro mechanical System 1 System) have been advanced, and the required chip size has been reduced. However, as the chip size obtained by stealth dicing decreases, problems such as unexpected cutting and separation of the semiconductor wafer, division of DAF or NCF, and breakage of the obtained chip with an adhesive layer tend to occur in the cooling and spreading step.
The present invention has been made in view of the above circumstances, and an object thereof is to provide a pressure-sensitive adhesive sheet for stealth dicing and a method for manufacturing a semiconductor device, which can favorably singulate a semiconductor wafer into chips by cooling expansion even when the size of the obtained chips is small.
Means for solving the problems
In order to achieve the above object, the present invention provides an adhesive sheet for stealth dicing, which is used for cutting and separating at least a semiconductor wafer having a modified layer formed therein into individual chips in an environment of-20 ℃ to 10 ℃, the adhesive sheet comprising: when the adhesive sheet for stealth dicing is attached to a silicon wafer via the adhesive layer, the shear force at 0 ℃ at the interface between the adhesive layer and the silicon wafer is 190N/(3mm × 20mm) or more and 400N/(3mm × 20mm) or less (invention 1).
When the shear force at 0 ℃ of the adhesive sheet for stealth dicing of the invention (invention 1) is in the above range, the adhesive sheet for stealth dicing is less likely to be displaced at the interface between the adhesive sheet for stealth dicing and the semiconductor wafer laminated on the adhesive sheet for stealth dicing when the adhesive sheet is cooled and expanded. Thus, the force for pulling the semiconductor wafer in the peripheral edge direction, which is generated when the adhesive sheet for stealth dicing is expanded, is easily concentrated on the modified layer, and as a result, the semiconductor wafer can be favorably divided in the modified layer. Therefore, even when the size of the obtained chip is small, the occurrence of problems such as defective division and chip breakage can be suppressed, and a good chip can be obtained.
In the above invention (invention 1), the length of the shortest side of the chip is preferably 0.5mm to 20mm (invention 2).
In the above inventions (inventions 1 and 2), the thickness of the semiconductor wafer is preferably 10 μm or more and 1000 μm or less (invention 3).
In the above inventions (inventions 1 to 3), the adhesive agent layer is preferably made of an energy ray curable adhesive (invention 4).
In the above inventions (inventions 1 to 4), the storage modulus of the base material at 0 ℃ is preferably 100MPa or more and 1500MPa or less (invention 5).
A second aspect of the present invention provides a method for manufacturing a semiconductor device, including: a step of bonding the adhesive layer of the adhesive sheet for stealth dicing (inventions 1 to 5) to a semiconductor wafer; a modified layer forming step of forming a modified layer in the semiconductor wafer; and a cooling and expanding step (invention 6) of expanding the adhesive sheet for stealth dicing in an environment of-20 ℃ to 10 ℃ to cut the semiconductor wafer having the modified layer formed therein and separate the semiconductor wafer into individual chips.
The above invention (invention 6) preferably further comprises the steps of: and a laminating step (invention 7) of laminating a bonding film on a surface of the semiconductor wafer bonded to the stealth dicing adhesive sheet, the surface being on the opposite side to the stealth dicing adhesive sheet side.
Effects of the invention
According to the present invention, it is possible to provide an adhesive sheet for stealth dicing and a method for manufacturing a semiconductor device, which can favorably separate a semiconductor wafer into chips by cooling spread even when the obtained chip size is small.
Drawings
Fig. 1 is a plan view illustrating a method of measuring a shear force in test example 1.
FIG. 2 is a sectional view showing a method of measuring a shear force in test example 1.
Detailed Description
Hereinafter, embodiments of the present invention will be described.
[ adhesive sheet for stealth dicing ]
The adhesive sheet for stealth dicing according to one embodiment of the present invention is used for cutting and separating a semiconductor wafer having at least a modified layer formed therein into individual chips in a low-temperature environment. Here, the low temperature environment is a temperature environment in which DAF or NCF is sufficiently embrittled, and is, for example, an environment of 10 ℃ or less, preferably an environment of 6 ℃ or less, and more preferably an environment of 4 ℃ or less. The lower limit of the temperature in the low-temperature environment is not particularly limited, and for example, the low-temperature environment is an environment of-20 ℃ or higher, particularly preferably an environment of-15 ℃ or higher, and more preferably an environment of-10 ℃ or higher. In an environment exceeding 10 ℃, embrittlement of DAF or NCF is insufficient, and there is a possibility that favorable division cannot be performed. In addition, in an environment of less than-20 ℃, since the DAF, NCF, or adhesive sheet is left in an environment of a glass transition temperature (Tg) or less thereof, there is a possibility that the adhesiveness thereof to the semiconductor wafer is lowered, and the adhesive sheet may be broken when being expanded. The step of forming the modified layer (modified layer forming step) in the semiconductor wafer may be performed in a state where the semiconductor wafer is bonded to the concealed dicing adhesive sheet, or may be performed before the semiconductor wafer is bonded to the concealed dicing adhesive sheet. In addition, "sheet" in the present specification also includes the concept of "tape".
The adhesive sheet for stealth dicing of the present embodiment includes: the adhesive layer is laminated on one surface side of the base material. The base material and the adhesive layer are preferably directly laminated, but the present invention is not limited thereto.
When the adhesive sheet for stealth dicing of the present embodiment is bonded to a silicon wafer via the adhesive layer included in the adhesive sheet for stealth dicing of the present embodiment, the shear force at 0 ℃ at the interface between the adhesive layer and the silicon wafer is 190N/(3mm × 20mm) or more, preferably 195N/(3mm × 20mm) or more, and particularly preferably 200N/(3mm × 20mm) or more. The shear force is 400N/(3 mm. times.20 mm) or less, preferably 300N/(3 mm. times.20 mm) or less, and particularly preferably 200N/(3 mm. times.20 mm) or less. If the shear force is less than 190N/(3mm × 20mm), the adhesive sheet for stealth dicing is likely to be displaced at the interface with the semiconductor wafer during cooling expansion, and the semiconductor wafer cannot be cut and separated satisfactorily particularly when the chip size is small. On the other hand, if the shear force exceeds 400N/(3 mm. times.20 mm), the chip spacing cannot be sufficiently enlarged by cooling expansion. The method of measuring the shear force is shown in the test examples described below.
When the semiconductor wafer having the modified layer formed therein is cut and separated into individual chips in a low-temperature environment using the adhesive sheet for stealth dicing of the present embodiment, the shortest side of the obtained chip preferably has a length of 0.5mm to 20mm, more preferably 0.7mm to 18mm, and even more preferably 1.0mm to 16 mm. As described above, the adhesive sheet for stealth dicing of the present embodiment can suppress the occurrence of misalignment at the interface between the adhesive sheet for stealth dicing and the semiconductor wafer, and can favorably cut and separate the semiconductor wafer, and therefore, the semiconductor wafer can favorably be cut and separated, and small chips having the chip size as described above can be obtained.
When the semiconductor wafer having the modified layer formed therein is cut and separated into individual chips in a low-temperature environment using the pressure-sensitive adhesive sheet for stealth dicing of the present embodiment, the thickness of the semiconductor wafer is preferably 10 μm to 1000 μm, more preferably 20 μm to 950 μm, and still more preferably 30 μm to 900 μm. In general, the thicker the semiconductor wafer is, the more difficult it is to cut and separate the semiconductor wafer into chips properly when performing cooling expansion. However, as described above, the adhesive sheet for stealth dicing of the present embodiment can suppress the occurrence of misalignment at the interface between the adhesive sheet for stealth dicing and the semiconductor wafer, and can cut and separate the semiconductor wafer satisfactorily, and therefore, even a semiconductor wafer having a large thickness as described above can be cut and separated satisfactorily.
1. Adhesive layer
The adhesive layer of the adhesive sheet for stealth dicing of the present embodiment is not particularly limited as long as the adhesive layer satisfies the shear force. The adhesive layer may be composed of a non-energy ray-curable adhesive or an energy ray-curable adhesive. As the non-energy ray-curable adhesive, adhesives having desired adhesive force and removability are preferable, and for example, acrylic adhesives, rubber adhesives, silicone adhesives, urethane adhesives, polyester adhesives, polyvinyl ether adhesives, and the like can be used. Among these, acrylic adhesives are preferable which can effectively prevent the semiconductor wafer, chip, and the like from coming off in the modified layer forming step, the cooling and spreading step, and the like.
On the other hand, since the energy ray-curable adhesive is cured by irradiation with an energy ray to reduce the adhesive force, when the chips obtained by dividing the semiconductor wafer are to be separated from the adhesive sheet for stealth dicing, the chips can be easily separated by irradiation with an energy ray.
The energy ray-curable adhesive constituting the adhesive layer may contain, as a main component, a polymer having energy ray-curability, or a mixture of a non-energy ray-curable polymer (a polymer having no energy ray-curability) and a monomer and/or oligomer having at least one or more energy ray-curable groups. The curable composition may be a mixture of a polymer curable with energy rays and a non-energy-ray-curable polymer, a mixture of a polymer curable with energy rays and a monomer and/or oligomer having at least one energy-ray-curable group, or a mixture of these 3 substances.
First, a case where the energy ray-curable adhesive contains a polymer having energy ray-curability as a main component will be described.
The polymer having energy ray curability is preferably a (meth) acrylate (co) polymer (a) having an energy ray-curable functional group (energy ray-curable group) introduced into a side chain thereof (hereinafter, sometimes referred to as "energy ray-curable polymer (a)"). The energy ray-curable polymer (a) is preferably a polymer obtained by reacting an acrylic copolymer (a1) having a functional group-containing monomer unit with an unsaturated group-containing compound (a2) having a functional group bonded to the functional group. In the present specification, the term (meth) acrylate refers to acrylate and methacrylate. Other similar terms are also the same.
It is preferable that the acrylic copolymer (a1) contains a constituent unit derived from a functional group-containing monomer and a constituent unit derived from a (meth) acrylate monomer or a derivative thereof.
The functional group-containing monomer as a constituent unit of the acrylic copolymer (a1) is preferably a monomer having a polymerizable double bond and a functional group such as a hydroxyl group, a carboxyl group, an amino group, a substituted amino group, or an epoxy group in the molecule.
Examples of the hydroxyl group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl acrylate, and 4-hydroxybutyl (meth) acrylate, and these hydroxyl group-containing monomers may be used alone or in combination of two or more.
Examples of the carboxyl group-containing monomer include ethylenically unsaturated carboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, and citraconic acid. These carboxyl group-containing monomers may be used alone or in combination of two or more.
Examples of the amino group-containing monomer or substituted amino group-containing monomer include aminoethyl (meth) acrylate, n-butylaminoethyl (meth) acrylate, and the like. These amino group-containing monomers or substituted amino group-containing monomers may be used alone, or two or more thereof may be used in combination.
The (meth) acrylate ester monomer constituting the acrylic copolymer (a1) is preferably a monomer having an alicyclic structure in the molecule (alicyclic structure-containing monomer), for example, in addition to an alkyl (meth) acrylate ester having an alkyl group with 1 to 20 carbon atoms.
The alkyl (meth) acrylate is particularly preferably an alkyl (meth) acrylate having an alkyl group with 1 to 18 carbon atoms, such as methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, n-butyl (meth) acrylate, and 2-ethylhexyl (meth) acrylate. These alkyl (meth) acrylates may be used alone or in combination of two or more.
Examples of the alicyclic structure-containing monomer include cyclohexyl (meth) acrylate, dicyclopentanyl (meth) acrylate, adamantyl (meth) acrylate, isobornyl (meth) acrylate, dicyclopentenyl (meth) acrylate, and dicyclopentenyloxyethyl (meth) acrylate. These alicyclic structure-containing monomers may be used alone or in combination of two or more.
The acrylic copolymer (a1) preferably contains the constituent unit derived from the functional group-containing monomer in an amount of 1 to 35% by mass, particularly preferably 5 to 30% by mass, and further preferably 10 to 25% by mass. The acrylic copolymer (a1) preferably contains a constituent unit derived from a (meth) acrylate monomer or a derivative thereof in an amount of 50 to 99% by mass, particularly preferably 60 to 95% by mass, and more preferably 70 to 90% by mass.
The acrylic copolymer (a1) can be obtained by copolymerizing the functional group-containing monomer described above with a (meth) acrylate monomer or a derivative thereof by a conventional method, and besides these monomers, dimethylacrylamide, vinyl formate, vinyl acetate, styrene, and the like can be copolymerized.
The energy ray-curable polymer (a) can be obtained by reacting the acrylic copolymer (a1) having the functional group-containing monomer unit with the unsaturated group-containing compound (a2) having a functional group bonded to the functional group.
The functional group of the unsaturated group-containing compound (a2) can be appropriately selected depending on the kind of the functional group-containing monomer unit of the acrylic copolymer (a 1). For example, when the functional group of the acrylic copolymer (a1) is a hydroxyl group, an amino group, or a substituted amino group, the functional group of the unsaturated group-containing compound (a2) is preferably an isocyanate group or an epoxy group, and when the functional group of the acrylic copolymer (a1) is an epoxy group, the functional group of the unsaturated group-containing compound (a2) is preferably an amino group, a carboxyl group, or an aziridine group.
Examples of the unsaturated group-containing compound (a2) include 2-methacryloyloxyethyl isocyanate, m-isopropenyl- α -dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1- (bisacryloxymethyl) ethyl isocyanate, an acryloyl monoisocyanate compound obtained by the reaction of a diisocyanate compound or a polyisocyanate compound with hydroxyethyl (meth) acrylate, an acryloyl monoisocyanate compound obtained by the reaction of a diisocyanate compound or a polyisocyanate compound with a polyol compound and hydroxyethyl (meth) acrylate, glycidyl (meth) acrylate, 2- (1-aziridinyl) ethyl (meth) acrylate, 2-vinyl-2-oxazoline, 2-isopropenyl-2-oxazoline and the like.
The unsaturated group-containing compound (a2) is used in an amount of 50 to 95 mol%, particularly preferably 60 to 93 mol%, and further preferably 70 to 90 mol% based on the number of moles of the functional group-containing monomer in the acrylic copolymer (a 1).
In the reaction of the acrylic copolymer (a1) and the unsaturated group-containing compound (a2), the reaction temperature, pressure, solvent, time, presence or absence of a catalyst, and the type of a catalyst can be appropriately selected depending on the combination of the functional group of the acrylic copolymer (a1) and the functional group of the unsaturated group-containing compound (a 2). Thus, the functional group present in the acrylic copolymer (a1) was reacted with the functional group in the unsaturated group-containing compound (a2), and an unsaturated group was introduced into the side chain of the acrylic copolymer (a1), thereby obtaining an energy ray-curable polymer (a).
The weight average molecular weight (Mw) of the energy ray-curable polymer (a) obtained in this manner is preferably 1 ten thousand or more, particularly preferably 15 to 150 ten thousand, and more preferably 20 to 100 ten thousand. The weight average molecular weight (Mw) in the present specification is a value converted to standard polystyrene measured by Gel Permeation Chromatography (GPC).
The energy ray-curable adhesive may further contain an energy ray-curable monomer and/or oligomer (B) even if the energy ray-curable adhesive contains, as a main component, a polymer having energy ray curability such as the energy ray-curable polymer (a).
Examples of the energy ray-curable monomer and/or oligomer (B) include esters of polyhydric alcohols and (meth) acrylic acid.
Examples of the energy ray-curable monomer and/or oligomer (B) include monofunctional acrylates such as cyclohexyl (meth) acrylate and isobornyl (meth) acrylate, multifunctional acrylates such as trimethylolpropane tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1, 4-butanediol di (meth) acrylate, 1, 6-hexanediol di (meth) acrylate, polyethylene glycol di (meth) acrylate, and dimethylol tricyclodecane di (meth) acrylate, polyester oligo (meth) acrylate, and polyurethane oligo (meth) acrylate.
When the energy ray-curable monomer and/or oligomer (B) is blended with the energy ray-curable polymer (a), the content of the energy ray-curable monomer and/or oligomer (B) in the energy ray-curable adhesive is preferably 0.1 to 180 parts by mass, and particularly preferably 60 to 150 parts by mass, based on 100 parts by mass of the energy ray-curable polymer (a).
When ultraviolet rays are used as the energy rays for curing the energy ray-curable adhesive, it is preferable to add a photopolymerization initiator (C) and use the photopolymerization initiator (C) can reduce the polymerization curing time and the irradiation amount of light.
Specific examples of the photopolymerization initiator (C) include benzophenone, acetophenone, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin dimethyl ketal, 2, 4-diethylthioxanthone, 1-hydroxycyclohexyl phenyl ketone, benzyl diphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, bibenzyl, diacetyl, β -chloroanthraquinone, (2,4, 6-trimethylbenzyldiphenyl) phosphine oxide, 2-benzothiazole-N, N-diethyldithiocarbamate, oligo { 2-hydroxy-2-methyl-1- [4- (1-propenyl) phenyl ] acetone, 2-dimethoxy-1, 2-diphenylethane-1-one, and the like, and these photopolymerization initiators may be used alone or in combination of 2 or more.
When the energy ray-curable monomer and/or oligomer (B) is blended with the energy ray-curable polymer (a), the photopolymerization initiator (C) is used in an amount of 0.1 to 10 parts by mass, particularly preferably 0.5 to 6 parts by mass, based on 100 parts by mass of the total amount of the energy ray-curable copolymer (a) and the energy ray-curable monomer and/or oligomer (B).
In addition to the above components, other components may be appropriately blended in the energy ray-curable adhesive. Examples of the other components include a non-energy ray-curable polymer component or oligomer component (D), a crosslinking agent (E), and a polymerizable branched polymer (F).
Examples of the non-energy ray-curable polymer component or oligomer component (D) include polyacrylates, polyesters, polyurethanes, polycarbonates, polyolefins, and hyperbranched polymers, and polymers or oligomers having a weight average molecular weight (Mw) of 3000 to 250 ten thousand are preferable. When the component (D) is blended in an energy ray-curable adhesive, adhesiveness and releasability before curing, strength after curing, easy releasability from an adherend, adhesiveness to another layer, storage stability and the like can be improved. The blending amount of the component (D) is not particularly limited, and can be appropriately determined within a range of 0.01 to 50 parts by mass per 100 parts by mass of the energy ray-curable copolymer (A).
As the crosslinking agent (E), a polyfunctional compound reactive with a functional group of the energy ray-curable polymer (a) or the like can be used. Examples of such polyfunctional compounds include isocyanate compounds, epoxy compounds, amine compounds, melamine compounds, aziridine compounds, hydrazine compounds, aldehyde compounds, oxazoline compounds, metal alkoxide compounds, metal chelate compounds, metal salts, ammonium salts, reactive phenol resins, and the like. The shear force can be adjusted by blending the energy ray-curable adhesive with the crosslinking agent (E).
The amount of the crosslinking agent (E) blended is preferably 0.01 to 8 parts by mass, particularly preferably 0.04 to 5 parts by mass, and further preferably 0.05 to 3.5 parts by mass, based on 100 parts by mass of the energy ray-curable polymer (A).
The polymerizable branched polymer (F) is a polymer having an energy ray-polymerizable group and a branched structure. By incorporating the polymerizable branched polymer in the energy ray-curable adhesive, it is possible to suppress transfer of organic substances from the adhesive layer to a semiconductor wafer or a semiconductor chip stacked on the stealth dicing adhesive sheet, and at the same time, to reduce a mechanical load applied to the semiconductor chip in a step of picking up the semiconductor chip from the stealth dicing adhesive sheet alone. Although it is not clear how the polymerizable branched polymer (F) contributes to such an effect, it is considered that the polymerizable branched polymer (F) tends to be present in the vicinity of the interface of the semiconductor wafer or the semiconductor chip in the adhesive layer, or the polymerizable branched polymer (F) is likely to be affected by, for example, polymerization with the energy ray-curable polymer (a) or the energy ray-curable monomer and/or oligomer (B) by irradiation with an energy ray.
The specific structure of the polymerizable branched polymer (F) such as the molecular weight, the degree of branched structure, and the number of energy ray-polymerizable groups in one molecule is not particularly limited. As an example of a method for obtaining such a polymerizable branched polymer (F), first, a monomer having 2 or more radically polymerizable double bonds in the molecule, a monomer having active hydrogen and 1 radically polymerizable double bond in the molecule, and a monomer having 1 radically polymerizable double bond in the molecule are polymerized to obtain a polymer having a branched structure. Then, the resultant polymer is reacted with a compound having in its molecule a functional group capable of forming a bond by reacting with an active hydrogen of the polymer and at least 1 radical polymerizable double bond, whereby a polymerizable branched polymer (F) can be obtained. As a commercially available product of the polymerizable branched polymer (F), "OD-007" manufactured by Nissan chemical Industries, Ltd. can be used, for example.
The weight average molecular weight (Mw) of the polymerizable branched polymer (F) is preferably 1000 or more, and particularly preferably 3000 or more, from the viewpoint of easily suppressing interaction between the energy ray-curable polymer (a) and the energy ray-curable monomer and/or oligomer (B) to a suitable degree. The weight average molecular weight (Mw) is preferably 100,000 or less, and particularly preferably 30,000 or less.
The content of the polymerizable branched polymer (F) in the adhesive layer is not particularly limited, and is usually preferably 0.01 parts by mass or more, and preferably 0.1 parts by mass or more, per 100 parts by mass of the energy ray-curable polymer (a), from the viewpoint of obtaining the above-described effects well by containing the polymerizable branched polymer (F). Since the polymerizable branched polymer (F) has a branched structure, the above-described effects can be obtained favorably even if the content in the adhesive agent layer is small.
Depending on the type of the polymerizable branched polymer (F), the polymerizable branched polymer (F) may remain as particles on the contact surface between the adhesive layer and the semiconductor wafer or semiconductor chip. Since the particles may lower the reliability of a product including a semiconductor chip, it is preferable that the number of particles remaining is small. Specifically, the number of particles having a particle diameter of 0.20 μm or more remaining on a silicon wafer as a semiconductor wafer is preferably less than 100, and particularly preferably 50 or less. From the viewpoint of easily satisfying such a requirement for particles, the content of the polymerizable branched polymer (F) is preferably less than 3.0 parts by mass, particularly preferably 2.5 parts by mass or less, and further preferably 2.0 parts by mass or less, with respect to 100 parts by mass of the energy ray-curable polymer (a).
Next, a case where the energy ray-curable adhesive contains a mixture of a non-energy ray-curable polymer component and a monomer and/or oligomer having at least 1 or more energy ray-curable groups as main components will be described.
As the non-energy ray-curable polymer component, for example, the same components as those of the acrylic copolymer (a1) can be used.
The monomer and/or oligomer having at least 1 or more energy ray-curable groups may be selected from the same monomers and/or oligomers as the component (B). The blending ratio of the non-energy ray-curable polymer component and the monomer and/or oligomer having at least one or more energy ray-curable groups is preferably 1 to 200 parts by mass, and particularly preferably 60 to 160 parts by mass, based on 100 parts by mass of the non-energy ray-curable polymer component.
In this case, the photopolymerization initiator (C), the crosslinking agent (E), and the like may be appropriately blended as described above.
The thickness of the adhesive layer is not particularly limited as long as the adhesive sheet can properly function in each step using the invisible dicing adhesive sheet of the present embodiment. Specifically, the particle size is preferably 1 to 50 μm, particularly preferably 3 to 40 μm, and further preferably 5 to 30 μm.
The adhesive layer of the adhesive sheet for stealth dicing of the present embodiment preferably has a storage modulus at 0 ℃ of 0.02 to 40.0MPa, particularly preferably 0.10 to 30.0MPa, and more preferably 0.50 to 20.0 MPa. The method of measuring the storage modulus is shown in test examples described below.
2. Base material
The storage modulus of the base material of the pressure-sensitive adhesive sheet for stealth dicing of the present embodiment at 0 ℃ is preferably 100MPa or more and 1500MPa or less. In general, when the storage modulus of the base material is too low, the region of the adhesive sheet for stealth dicing, on which the semiconductor wafer is not stacked, is likely to be stretched preferentially over the region on which the semiconductor wafer is stacked in the expanding step. However, when the storage modulus is within the above range, the region of the adhesive sheet for stealth dicing, on which the semiconductor wafers are stacked, can be also satisfactorily stretched, and as a result, the individual chips can be effectively cut and separated. The method of measuring the storage modulus is shown in test examples described below.
Further, when the storage modulus is 100MPa or more, the substrate exhibits a predetermined rigidity, and therefore, the adhesive layer formed on a release sheet or the like can be laminated on the substrate by transfer, and the adhesive sheet for stealth dicing can be efficiently produced. Further, the workability of the adhesive sheet for stealth dicing is also improved. On the other hand, if the storage modulus is 1500MPa or less, the adhesive sheet for stealth dicing can be expanded by cooling and can be stretched well. Further, the semiconductor wafer can be supported well by the invisible dicing adhesive sheet mounted on the ring frame.
From the above viewpoint, the lower limit of the storage modulus is more preferably 120MPa or more, and particularly preferably 150MPa or more. The upper limit of the storage modulus is more preferably 1200MPa or less, and particularly preferably 1000MPa or less.
In the modified layer forming step of irradiating a semiconductor wafer bonded to a stealth dicing adhesive sheet with a laser light through the stealth dicing adhesive sheet, the base material of the stealth dicing adhesive sheet of the present embodiment preferably exhibits excellent light transmittance to light having a wavelength of the laser light.
When the adhesive layer is cured using an energy ray, the base material preferably has optical transparency to the energy ray. The energy ray will be described below.
The base material of the pressure-sensitive adhesive sheet for stealth dicing of the present embodiment preferably includes a film (resin film) mainly composed of a resin-based material, and particularly preferably is formed only of a resin film. Specific examples of the resin film include ethylene-vinyl acetate copolymer films; ethylene copolymer films such as ethylene- (meth) acrylic acid copolymer films, ethylene- (meth) acrylic acid methyl ester copolymer films, and other ethylene- (meth) acrylic acid ester copolymer films; polyolefin films such as polyethylene films, polypropylene films, polybutylene films, polybutadiene films, polymethylpentene films, ethylene norbornene copolymer films, and norbornene resin films; polyvinyl chloride films such as polyvinyl chloride films and vinyl chloride copolymer films; polyester-based films such as polyethylene terephthalate film, polybutylene terephthalate film, and polyethylene naphthalate film; a (meth) acrylate copolymer film; a polyurethane film; a polyimide film; a polystyrene film; a polycarbonate film; fluororesin films, and the like. Examples of the polyethylene film include a Low Density Polyethylene (LDPE) film, a Linear Low Density Polyethylene (LLDPE) film, and a High Density Polyethylene (HDPE) film. Further, modified membranes such as crosslinked membranes and ionic polymer membranes can also be used. The substrate may be a film composed of 1 kind of the above-described film, or may be a film composed of a material in which 2 or more kinds of the above-described films are combined. Further, the multilayer structure may be a multilayer film in which a plurality of layers made of 1 or more of the above materials are laminated. In the laminated film, the materials constituting the respective layers may be the same or different.
When the use in the cooling and stretching step is considered, among the above films, polyolefin films such as ethylene-methacrylic acid copolymer films, polyethylene films, polypropylene films, ionomer films of such polyolefins, polyvinyl chloride films, polyurethane films, or (meth) acrylate copolymer films are preferably used as the base material.
The base material may contain various additives such as a filler, a flame retardant, a plasticizer, an antistatic agent, a lubricant, an antioxidant, a colorant, an infrared absorber, an ultraviolet absorber, and an ion scavenger in the film. The content of these additives is not particularly limited, and is preferably within a range in which the base material can exhibit a desired function.
In the case where the substrate and the adhesive layer are directly laminated in the adhesive sheet for stealth dicing of the present embodiment, the surface of the substrate on the adhesive layer side may be subjected to surface treatment such as primer treatment, corona treatment, plasma treatment or the like in order to improve adhesion to the adhesive layer.
The thickness of the base material is not limited as long as it can function properly in the step of using the adhesive sheet for stealth dicing. The thickness is preferably 20 to 450 μm, particularly preferably 25 to 250 μm, and further preferably 50 to 150 μm.
3. Release sheet
In order to protect the adhesive layer, a release sheet may be laminated on the surface of the adhesive layer of the adhesive sheet for stealth dicing of the present embodiment opposite to the substrate side until the use of the adhesive sheet for stealth dicing.
The release sheet is not particularly limited, and examples thereof include a polyethylene film, a polypropylene film, a polybutylene film, a polybutadiene film, a polymethylpentene film, a polyvinyl chloride film, a vinyl chloride copolymer film, a polyethylene terephthalate film, a polyethylene naphthalate film, a polybutylene terephthalate film, a polyurethane film, an ethylene vinyl acetate film, an ionomer resin film, an ethylene- (meth) acrylic acid copolymer film, an ethylene- (meth) acrylate copolymer film, a polystyrene film, a polycarbonate film, a polyimide film, and a fluororesin film. In addition, crosslinked films thereof may also be used. Further, a laminated film obtained by laminating a plurality of these films may be used.
The release surface (surface having releasability; particularly, surface in contact with the adhesive layer) of the release sheet is preferably subjected to a release treatment. Examples of the release agent used for the release treatment include alkyd based, silicone based, fluorine based, unsaturated polyester based, polyolefin based, and wax based release agents.
The thickness of the release sheet is not particularly limited, and is usually about 20 μm to 100 μm.
4. Adhesive force
The adhesive sheet for stealth dicing of the present embodiment preferably has an adhesive force to a silicon mirror wafer at 0 ℃ of 0.5N/25mm or more, and particularly preferably 1.0N/25mm or more. The adhesion is preferably 30N/25mm or less, particularly preferably 25N/25mm or less. By setting the adhesive force at 0 ℃ within the above range, when the adhesive sheet is spread in the cooling-spreading step, a predetermined position of the semiconductor wafer or the obtained semiconductor chip is easily maintained, and the modified layer portion of the semiconductor wafer can be favorably divided. When the adhesive layer is made of an energy ray-curable adhesive, the adhesive force refers to the adhesive force before irradiation with an energy ray. The adhesive force is measured by the method described later.
When the adhesive layer in the pressure-sensitive adhesive sheet for stealth dicing of the present embodiment is composed of an energy ray-curable adhesive, the adhesive force to a silicon mirror wafer after irradiation with an energy ray at 23 ℃ is preferably 10mN/25mm or more, and particularly preferably 20mN/25mm or more. The adhesive force is preferably 1000mN/25mm or less, and particularly preferably 900mN/25mm or less. After the semiconductor wafer is singulated, the adhesive sheet for stealth dicing is irradiated with an energy ray to reduce the adhesive force to the above range, whereby the obtained semiconductor chip can be easily picked up. The adhesive force is measured by the method described later.
The above-mentioned adhesive force at 0 ℃ and the adhesive force after irradiation with an energy ray at 23 ℃ can be measured by the following methods. First, a semiconductor processing sheet was cut into a width of 25mm, and the surface on the adhesive layer side was attached to a silicon mirror wafer. The attachment can be performed using a laminator (product name "RAD-3510F/12", manufactured by LINTECCORPORATION) under conditions of an attachment speed of 10mm/s, a wafer protrusion amount of 20 μm, and a roller pressure of 0.1 MPa. Then, the obtained laminate of the semiconductor wafer and the silicon mirror wafer is laminatedThen, the mixture was left at 23 ℃ and 50% RH for 20 minutes. Here, when the adhesive force after irradiation with energy rays at 23 ℃ was measured, after leaving for 20 minutes, the laminate was irradiated with ultraviolet rays (UV) from the substrate side of the sheet in a nitrogen atmosphere using an ultraviolet irradiation apparatus (product name "RAD-2000 m/12" manufactured by LINTECCORPORATION) (illuminance 230 mW/cm)2Light quantity 190mJ/cm2). The sheet was left to stand for 20 minutes or UV irradiation was continued, and the sheet was peeled from the silicon mirror wafer at a peeling angle of 180 ℃ and a peeling speed of 300mm/min using an universal tensile tester (manufactured by ADVANCED MICRO DEVICES, INC, product name "RTG-1225") based on JIS Z0237, and the measured value was taken as the adhesion (mN/25 mm). Here, when the adhesive force at 0 ℃ is measured, the above-mentioned universal tensile testing machine is used to measure the adhesive force at 0 ℃ and when the adhesive force at 23 ℃ is measured, the above-mentioned universal tensile testing machine is used to measure the adhesive force at 23 ℃.
5. Method for producing adhesive sheet for stealth dicing
The method for producing the adhesive sheet for stealth dicing of the present embodiment is not particularly limited, and a conventional method can be used. As a first example of the production method, first, a coating composition is prepared, which contains an adhesive composition containing an adhesive layer material and, if necessary, a solvent or a dispersant. Next, the coating composition is applied to the release surface of the release sheet by a die coater, a curtain coater, a spray coater, a slit coater, a blade coater, or the like, thereby forming a coating film. Further, the coating film is dried to form an adhesive layer. Then, the adhesive layer on the release sheet and the base material are bonded to each other to obtain the adhesive sheet for stealth dicing. The properties of the coating composition are not particularly limited as long as the coating composition can be coated. The component for forming the adhesive layer may be contained in the coating composition as a solute and also contained in the coating composition as a dispersion medium.
When the coating composition contains the crosslinking agent (E), the drying conditions (temperature, time, etc.) may be changed or a heating treatment may be separately provided in order to form a crosslinked structure at a desired density. In order to sufficiently progress the crosslinking reaction, the adhesive layer is generally laminated on the substrate by the above-mentioned method or the like, and the obtained pressure-sensitive adhesive sheet for stealth dicing is subjected to aging by standing for several days at 23 ℃ under an environment of a relative humidity of 50%, for example.
As a second example of the method for producing the pressure-sensitive adhesive sheet for stealth dicing of the present embodiment, first, the coating composition is applied to one surface of a substrate to form a coating film. Then, the coating film is dried to form a laminate composed of a base material and an adhesive layer. Further, the surface of the laminate on which the adhesive layer is exposed is bonded to the release surface of the release sheet. Thus, a pressure-sensitive adhesive sheet for stealth dicing, in which a release sheet is laminated on a pressure-sensitive adhesive layer, can be obtained.
[ method for manufacturing semiconductor device ]
A method for manufacturing a semiconductor device according to an embodiment of the present invention includes: a bonding step of bonding the adhesive layer of the adhesive sheet for stealth dicing (the adhesive sheet for stealth dicing according to the present embodiment) to a semiconductor wafer; a modified layer forming step of forming a modified layer in the semiconductor wafer; and a cooling and expanding step of expanding the adhesive sheet for stealth dicing in a low-temperature environment, cutting the semiconductor wafer having the modified layer formed therein, and separating the semiconductor wafer into individual chips.
In the above-described manufacturing method, the bonding step may be performed before the modified layer forming step, or conversely, the modified layer forming step may be performed before the bonding step. In the former case, in the modified layer forming step, the semiconductor wafer bonded with the pressure-sensitive adhesive sheet for stealth dicing of the present embodiment is irradiated with laser light. In the latter modified layer forming step, for example, a semiconductor wafer bonded to another adhesive sheet (e.g., a back grinding sheet) is irradiated with laser light.
According to the method for manufacturing a semiconductor device of the present embodiment, since the adhesive sheet for stealth dicing is used at least in the cooling and expanding step, the adhesive sheet for stealth dicing and the semiconductor wafer interface are less likely to be displaced in the cooling and expanding step. Thus, the force of pulling the semiconductor wafer in the peripheral direction thereof, which is generated when the adhesive sheet for stealth dicing is expanded, is easily concentrated on the modified layer, and as a result, the semiconductor wafer can be favorably divided on the modified layer. Therefore, even when the size of the obtained chip is small, problems such as defective division and chip breakage can be suppressed, and a good chip can be obtained.
The method for manufacturing a semiconductor device according to the present embodiment may further include: and a laminating step of laminating a bonding film (DAF, NCF, or the like) on the surface of the semiconductor wafer bonded to the stealth dicing adhesive sheet, the surface being opposite to the stealth dicing adhesive sheet side. According to the method for manufacturing a semiconductor device of the present embodiment, since the cooling expansion step is performed, the adhesive film can be favorably divided in a low-temperature environment.
A preferred specific example of the method for manufacturing a semiconductor device according to one embodiment of the present invention will be described below.
(1) Bonding step
First, a bonding step of bonding the adhesive layer of the pressure-sensitive adhesive sheet for stealth dicing of the present embodiment to a semiconductor wafer is performed. In general, the surface of the adhesive layer side of the stealth dicing adhesive sheet is mounted on one surface of a semiconductor wafer, but the surface is not limited thereto. In this bonding step, generally, a ring frame is bonded to a region on the outer peripheral side of a region to which the semiconductor wafer is bonded on the surface of the adhesive layer side of the stealth dicing adhesive sheet. In this case, a region where the adhesive layer is exposed exists as a peripheral region between the ring frame and the semiconductor wafer in a plan view.
(2) Lamination process
Next, a laminating step of laminating the adhesive film may be performed on the surface of the semiconductor wafer bonded to the stealth dicing adhesive sheet, the surface being opposite to the stealth dicing adhesive sheet side. The lamination is generally performed by heat lamination (thermal lamination). When the surface of the semiconductor wafer has an electrode, the adhesive film is generally laminated on the electrode side of the semiconductor wafer because the electrode is present on the surface of the semiconductor wafer opposite to the invisible dicing pressure-sensitive adhesive sheet side.
The adhesive film may be any of DAF, NCF, and the like, and generally has heat adhesiveness. The material is not particularly limited, and specific examples thereof include a film-shaped member formed of a pressure-sensitive adhesive composition containing a heat-resistant resin material such as a polyimide resin, an epoxy resin, or a phenol resin, and a curing accelerator.
(3) Modified layer formation step
After the bonding step or the laminating step, a modified layer forming step of forming a modified layer in the semiconductor wafer is preferably performed, or the modified layer forming step may be performed before these steps. The modified layer forming step is generally performed by irradiating the semiconductor wafer with laser light in an infrared region so as to focus on a focal point set in the semiconductor wafer (stealth dicing). The laser light may be irradiated from any side of the semiconductor wafer. When the modified layer forming step is performed after the laminating step, the laser beam is preferably irradiated through the invisible cutting adhesive sheet. In addition, when the modified layer forming step is performed between the bonding step and the laminating step or when the laminating step is not performed, it is preferable that the semiconductor wafer is directly irradiated with the laser light without interposing the stealth dicing adhesive sheet therebetween.
(4) Cooling expansion process
After the modified layer forming step, a cooling and expanding step of expanding the stealth dicing adhesive sheet in a low-temperature environment to cut and separate the semiconductor wafer is performed. Thus, the semiconductor chips obtained by dividing the semiconductor wafer are bonded to the adhesive layer of the invisible dicing adhesive sheet. When the adhesive film is laminated on the semiconductor wafer, the adhesive film is also divided by the spreading step together with the divided semiconductor wafer, and the chips with the adhesive layer are obtained.
The specific conditions of the cooling expansion step are not limited. For example, the temperature at which the adhesive sheet for stealth dicing is expanded may be a normal temperature for cooling expansion, and as described above, is usually 10 ℃ or less, preferably 6 ℃ or less, and more preferably 4 ℃ or less. The lower limit of the temperature of the cooling expansion is not particularly limited, and is usually-20 ℃ or higher, particularly preferably-15 ℃ or higher, and further preferably-10 ℃ or higher. As described above, by performing the cooling and spreading step using the invisible dicing adhesive sheet of the present embodiment, the semiconductor wafer can be cut and separated into chips well, and even when the adhesive film is laminated, the adhesive film can be divided well.
(5) Re-expansion procedure
After the cooling and expanding step, the stealth dicing adhesive sheet and the semiconductor chip or the chip with the adhesive layer stacked thereon may be returned to a room temperature environment, and the expanding step (re-expanding step) may be performed again in the room temperature environment. Specific conditions in the re-expansion step are not particularly limited, except for the expansion at room temperature (e.g., 23 ℃).
In addition, in the re-expanding step, the peripheral edge region of the concealed dicing adhesive sheet (the region between the ring frame and the chip group in a plan view) is generally loosened.
(6) Shrinking process
In the step of re-expanding, when the peripheral edge region of the adhesive sheet for stealth dicing is loosened, it is preferable to perform a shrinking step of heating the peripheral edge region. By heating the peripheral region of the adhesive sheet for stealth dicing, the base material located in the peripheral region shrinks, and the amount of slack in the adhesive sheet for stealth dicing caused by the re-expansion step can be reduced. The heating method in the shrinking step is not limited. The infrared ray and microwave can be irradiated by blowing hot air or by irradiating infrared ray.
(7) Picking up process
When the re-expanding step is performed and the re-expanding step is not performed after the subsequent shrinking step, the pick-up step of picking up the chips attached to the adhesive sheet for stealth dicing individually from the adhesive sheet for stealth dicing to obtain chips as the semiconductor device is performed after the cooling and expanding step.
Here, when the adhesive layer of the adhesive sheet for stealth dicing is made of an energy ray-curable adhesive, it is preferable that the adhesive layer is cured by irradiating the adhesive layer with an energy ray at any stage after the bonding step and before the pickup step, thereby reducing the adhesive force. This makes it easier to pick up the chip.
The energy ray includes ionizing radiation, i.e., X-ray, ultraviolet ray, electron beam, and the like. Among them, ultraviolet rays which are easily introduced by the irradiation equipment are preferable.
Since handling is easy when using ultraviolet rays as ionizing radiation, near ultraviolet rays including ultraviolet rays having a wavelength of about 200 to 380nm may be used. The amount of ultraviolet light may be appropriately selected depending on the type of the energy ray-curable adhesive contained in the adhesive layer and the thickness of the adhesive layer, and is usually 50 to 500mJ/cm2About, preferably 100 to 450mJ/cm2More preferably 150 to 400mJ/cm2. In addition, the ultraviolet light intensity is usually 50-500 mW/cm2About, preferably 100-450 mW/cm2More preferably 150-400 mW/cm2. The ultraviolet source is not particularly limited, and for example, a high-pressure mercury lamp, a halogen lamp, or a light-emitting diode (LED) can be used.
When an electron beam is used as the ionizing radiation, the acceleration voltage thereof may be appropriately selected depending on the energy ray-polymerizable group contained in the adhesive agent layer, the kind of the energy ray-polymerizable compound, and the thickness of the adhesive agent layer, and is preferably about 10 to 1000kV in general. The dose of irradiation may be appropriately selected depending on the type of the energy ray-curable adhesive contained in the adhesive layer and the thickness of the adhesive layer, and is usually selected in the range of 10 to 1000 krad. The electron beam source is not particularly limited, and various electron beam accelerators such as a Cockcroft-Walton (Cockcroft-Walton) type, a Van de graff (van der Waff) type, a resonant transformer type, an insulated core transformer type, a linear type, a denami (Dynamitron) type, and a high frequency type can be used.
By performing the above-described manufacturing method, a semiconductor device can be manufactured using the adhesive sheet for stealth dicing of the present embodiment.
The embodiments described above are described for easy understanding of the present invention, and are not described for limiting the present invention. Therefore, each element disclosed in the above embodiments also covers all design changes and equivalents that fall within the technical scope of the present invention.
Examples
The present invention will be described in more detail with reference to examples and the like, but the scope of the present invention is not limited to these examples and the like.
[ example 1]
(1) Preparation of adhesive composition
An acrylic copolymer obtained by reacting lauryl acrylate/methyl methacrylate/2-hydroxyethyl acrylate (mass ratio) of 42/30/28 was reacted with methacryloyloxyethyl isocyanate (MOI) in an amount of 80 mol% based on the 2-hydroxyethyl acrylate to obtain an energy ray-curable polymer (Mw: 40 ten thousand).
100 parts by mass of the obtained energy ray-curable polymer, 3 parts by mass of 1-hydroxycyclohexyl phenyl ketone (product name "Irgacure 184", manufactured by BASF) as a photopolymerization initiator, and 1.07 parts by mass of a toluene diisocyanate-based crosslinking agent (TOYO INK co., manufactured by ltd., product name "CORONATE L") as a crosslinking agent were mixed in a solvent to obtain an adhesive composition.
(2) Production of pressure-sensitive adhesive sheet for stealth dicing
On the release surface of the release sheet (manufactured by linec corporation, product name "SP-PET 3811"), the above adhesive composition was coated. Subsequently, the coating film of the adhesive composition is dried by heating to form an adhesive layer. The thickness of the adhesive layer was 10 μm. Then, the adhesive layer on the obtained release sheet was bonded to a corona-treated surface of an ethylene-methacrylic acid copolymer (EMAA) film (thickness: 80 μm, surface tension of corona-treated surface: 54mN/m) having one surface subjected to corona treatment as a base material, to obtain an adhesive sheet for stealth dicing.
[ example 2]
An acrylic copolymer obtained by reacting 2-ethylhexyl acrylate/methyl methacrylate/2-hydroxyethyl acrylate (mass ratio) of 42/30/28 was reacted with methacryloyloxyethyl isocyanate (MOI) in an amount of 80 mol% based on the 2-hydroxyethyl acrylate to obtain an energy ray-curable polymer (Mw: 40 ten thousand).
100 parts by mass of the obtained energy ray-curable polymer, 3 parts by mass of 1-hydroxycyclohexyl phenyl ketone (product name "Irgacure 184", manufactured by BASF) as a photopolymerization initiator, and 1.07 parts by mass of a toluene diisocyanate-based crosslinking agent (TOYO INK co., manufactured by ltd., product name "CORONATE L") as a crosslinking agent were mixed in a solvent to obtain an adhesive composition. An adhesive sheet for stealth dicing was produced in the same manner as in example 1, except for using the obtained adhesive composition.
[ example 3]
An acrylic copolymer obtained by reacting butylacrylate/methyl methacrylate/2-hydroxyethyl acrylate (mass ratio) at 42/30/28 was reacted with methacryloyloxyethyl isocyanate (MOI) in an amount of 80 mol% based on the 2-hydroxyethyl acrylate to obtain an energy ray-curable polymer (Mw: 40 ten thousand).
100 parts by mass of the obtained energy ray-curable polymer, 3 parts by mass of 1-hydroxycyclohexyl phenyl ketone (product name "Irgacure 184", manufactured by BASF) as a photopolymerization initiator, and 1.07 parts by mass of a toluene diisocyanate-based crosslinking agent (TOYO INK co., manufactured by ltd., product name "CORONATE L") as a crosslinking agent were mixed in a solvent to obtain an adhesive composition. An adhesive sheet for stealth dicing was produced in the same manner as in example 1, except for using the obtained adhesive composition.
[ example 4]
An acrylic copolymer obtained by reacting butyl acrylate/methyl methacrylate/2-hydroxyethyl acrylate (mass ratio) of 42/30/28 was reacted with methacryloyloxyethyl isocyanate (MOI) in an amount of 70 mol% based on the 2-hydroxyethyl acrylate to obtain an energy ray-curable polymer (Mw: 40 ten thousand).
100 parts by mass of the obtained energy ray-curable polymer, 3 parts by mass of 1-hydroxycyclohexyl phenyl ketone (product name "Irgacure 184", manufactured by BASF) as a photopolymerization initiator, and 0.43 part by mass of a toluene diisocyanate-based crosslinking agent (TOYO INK co., manufactured by ltd., product name "CORONATE L") as a crosslinking agent were mixed in a solvent to obtain an adhesive composition. An adhesive sheet for stealth dicing was produced in the same manner as in example 1, except for using the obtained adhesive composition.
Comparative example 1
An acrylic copolymer obtained by reacting butylacrylate/methyl methacrylate/2-hydroxyethyl acrylate (mass ratio) at 80/5/15 was reacted with methacryloyloxyethyl isocyanate (MOI) in an amount of 80 mol% based on the 2-hydroxyethyl acrylate to obtain an energy ray-curable polymer (Mw: 40 ten thousand).
An adhesive composition was obtained by mixing 100 parts by mass (in terms of solid content; the same shall apply hereinafter) of the obtained energy ray-curable polymer with 3 parts by mass of 1-hydroxycyclohexyl phenyl ketone (product name "Irgacure 184" manufactured by BASF) as a photopolymerization initiator and 0.49 parts by mass of a toluene diisocyanate-based crosslinking agent (product name "CORONATE L" manufactured by Nippon Polyurethane industrial co., ltd.) as a crosslinking agent in a solvent. An adhesive sheet for stealth dicing was produced in the same manner as in example 1, except for using the obtained adhesive composition.
Comparative example 2
An acrylic copolymer obtained by reacting 2-ethylhexyl acrylate/vinyl acetate/2-hydroxyethyl acrylate (mass ratio) of 60/20/20 was reacted with methacryloyloxyethyl isocyanate (MOI) in an amount of 80 mol% based on the 2-hydroxyethyl acrylate to obtain an energy ray-curable polymer (Mw: 40 ten thousand).
100 parts by mass of the obtained energy ray-curable polymer, 3 parts by mass of 1-hydroxycyclohexyl phenyl ketone (product name "Irgacure 184", manufactured by BASF) as a photopolymerization initiator, and 0.31 part by mass of a toluene diisocyanate-based crosslinking agent (TOYO INK co., manufactured by ltd., product name "CORONATE L") as a crosslinking agent were mixed in a solvent to obtain an adhesive composition. An adhesive sheet for stealth dicing was produced in the same manner as in example 1, except that the obtained adhesive composition was used.
Comparative example 3
An acrylic copolymer obtained by reacting butylacrylate/methyl methacrylate/2-hydroxyethyl acrylate (mass ratio) at 62/10/28 was reacted with methacryloyloxyethyl isocyanate (MOI) in an amount of 80 mol% based on the 2-hydroxyethyl acrylate to obtain an energy ray-curable polymer (Mw: 40 ten thousand).
100 parts by mass of the obtained energy ray-curable polymer, 3 parts by mass of 1-hydroxycyclohexyl phenyl ketone (product name "Irgacure 184", manufactured by BASF) as a photopolymerization initiator, and 1.61 parts by mass of a toluene diisocyanate-based crosslinking agent (TOYO INK co., manufactured by ltd., product name "CORONATE L") as a crosslinking agent were mixed in a solvent to obtain an adhesive composition. An adhesive sheet for stealth dicing was produced in the same manner as in example 1, except that the obtained adhesive composition was used.
Comparative example 4
An acrylic copolymer obtained by reacting 2-ethylhexyl acrylate/isobornyl acrylate/2-hydroxyethyl acrylate (mass ratio) of 42/30/28 was reacted with methacryloyloxyethyl isocyanate (MOI) in an amount of 80 mol% based on the 2-hydroxyethyl acrylate to obtain an energy ray-curable polymer (Mw: 40 ten thousand).
100 parts by mass of the obtained energy ray-curable polymer, 3 parts by mass of 1-hydroxycyclohexyl phenyl ketone (product name "Irgacure 184", manufactured by BASF) as a photopolymerization initiator, and 1.07 parts by mass of a toluene diisocyanate-based crosslinking agent (TOYO INK co., manufactured by ltd., product name "CORONATE L") as a crosslinking agent were mixed in a solvent to obtain an adhesive composition. An adhesive sheet for stealth dicing was produced in the same manner as in example 1, except that the obtained adhesive composition was used.
[ test example 1] (measurement of shear force)
A polyethylene terephthalate film (thickness: 100 μm) as a backing material was bonded to the surface of the base material of the pressure-sensitive adhesive sheet for stealth dicing obtained in examples and comparative examples, which was opposite to the adhesive layer, using an instant adhesive (TOAGOSEI co., ltd., product name, "Aron Alpha"), to obtain a laminate.
The obtained laminate was cut into a length of 23 ℃ under an atmosphere of a relative humidity of 50%After the thickness was 50mm and the width was 30mm, the release sheet was peeled off from the adhesive layer to prepare a sample. The sample was attached to the mirror surface of a silicon mirror wafer (thickness: 350 μm) via an adhesive layer under an atmosphere of 23 ℃ and 50% relative humidity. At this time, the sample was reciprocated 1 time by a 2kg roller to apply a load, and the sample was attached so that a portion of 3mm in the longitudinal direction of the sample was in close contact with the silicon wafer. Then, on the silicon mirror wafer, only the sample was cut with a dicing tool so that the sample width became 20mm, and unnecessary cut pieces of the sample were peeled off from the silicon mirror wafer. Thus, as shown in FIGS. 1 and 2, the sample and the silicon mirror wafer were obtained at 20mm X3 mm (60 mm)2) The test object obtained by sticking the region(s) of (1). In fig. 1 and 2, reference numeral 1 denotes a stealth dicing adhesive sheet (sample) with a backing material, reference numeral 2 denotes a silicon mirror wafer, reference numeral 11 denotes a base material, reference numeral 12 denotes an adhesive layer, and reference numeral 13 denotes a backing material.
Immediately after the above-described sticking, the obtained test object was moved to an environment of 0 ℃ and, after 20 minutes of sticking, a tensile test was carried out under an environment of 0 ℃ at a tensile speed of 1mm/min using a tensile compression tester (manufactured by IMADA-SScorporation, product name "SDT-203 NB-50R 3") to measure a shear force (N/(3 mm. times.20 mm)). The results are shown in Table 1.
[ test example 2] (measurement of storage modulus of substrate)
The storage modulus (MPa) of the substrate used in examples and comparative examples at 0 ℃ was measured under the following conditions and devices. The results are shown in Table 1.
A measuring device: manufacture of TA instruments, dynamic thermomechanical Analyzer "DMA Q800"
Test start temperature: 0 deg.C
Test end temperature: 200 deg.C
Temperature rise rate: 3 ℃/min
Frequency: 11Hz
Amplitude: 20 μm
[ test example 3] (measurement of storage modulus of adhesive agent layer)
The adhesive compositions used in examples and comparative examples were applied to the release surface of a release sheet to form an adhesive layer, and the release surface of a separately prepared release sheet was pressure-bonded to the exposed adhesive layer to produce an adhesive sheet composed of a release sheet/adhesive layer/release sheet. The release sheet was peeled from the adhesive sheet, and a plurality of layers were stacked so that the thickness of the adhesive layer became 200 μm. A rectangular 30mm X4 mm (thickness: 200 μm) was punched out of the obtained laminate of the adhesive layer to obtain a measurement sample. The storage modulus (MPa) of the adhesive layer at 0 ℃ was measured for the measurement sample by the following apparatus and conditions. The results are shown in Table 1.
A measuring device: manufacturing TA instruments, dynamic elastic modulus measuring device "ARES"
Measuring the distance: 20mm
Test start temperature: -30 deg.C
Test end temperature: 120 deg.C
Temperature rise rate: 3 ℃/min
Frequency: 11Hz
Amplitude: 20 μm
[ test example 4] (evaluation of Segmentability)
The surfaces of the 6-inch ring frame and the mirror surface of the 6-inch silicon mirror wafer (thickness: 150 μm) were attached to the adhesive layers of the pressure-sensitive adhesive sheets for stealth dicing obtained in examples and comparative examples. Next, using a stealth dicing apparatus (product name "DFL 7360" manufactured by DISCO corporation), a laser beam was irradiated from the surface of the 6-inch silicon mirror wafer surface opposite to the stealth dicing adhesive sheet under the following conditions, thereby forming a modified layer in the 6-inch silicon mirror wafer. At this time, the laser irradiation was performed 4 times so that the sizes of the obtained chips became 16mm square, 8mm square, 4mm square and 1mm square, respectively.
< conditions for irradiation >
Irradiation height: 100 μm from the tape side
Frequency: 90Hz
And (3) outputting: 0.25W
Processing speed: 360mm/sec
Then, the work was expanded at a pull-down rate of 100mm/sec and a pull-down amount of 10mm in an environment of 0 ℃ using an expanding apparatus (product name "ME-300B" manufactured by JCM Co.). Next, the number of chips that were well separated at the position of the modified layer and completely separated from the surrounding chips was measured, and the ratio (%) with respect to the total number of chips theoretically available was calculated. The separability was evaluated according to the following criteria. The results are shown in Table 1.
○, the proportion is 100 percent.
△, the ratio is less than 100% and more than 80%.
X: the above proportion is less than 80%.
[ Table 1]
As is clear from table 1, the adhesive sheet for stealth dicing obtained in the example can be spread by cooling to satisfactorily break the wafer on which the modified layer is formed, and particularly exhibits excellent separability even when the chip size is as small as 4mm square or 1mm square.
Industrial applicability
The adhesive sheet for stealth dicing of the present invention is applicable to a method for manufacturing a semiconductor device in which cooling expansion is performed.
Description of the reference numerals
1: an adhesive sheet for stealth dicing (sample) with a backing material; 11: a substrate; 12: an adhesive layer; 13: a backing material; 2: a silicon mirror wafer.
Claims (7)
1. An adhesive sheet for stealth dicing, which is used for cutting and separating at least a semiconductor wafer having a modified layer formed therein into individual chips in an environment of-20 ℃ to 10 ℃, the adhesive sheet comprising:
a base material and an adhesive layer laminated on one surface side of the base material,
when the pressure-sensitive adhesive sheet for stealth dicing is attached to a silicon wafer via the pressure-sensitive adhesive layer, the shear force at 0 ℃ at the interface between the pressure-sensitive adhesive layer and the silicon wafer is 190N/(3 mm. times.20 mm) or more and 400N/(3 mm. times.20 mm) or less.
2. The adhesive sheet for stealth dicing according to claim 1, wherein the length of the shortest side of the chip is 0.5mm to 20 mm.
3. The pressure-sensitive adhesive sheet for stealth dicing according to claim 1 or 2, wherein the thickness of the semiconductor wafer is 10 μm or more and 1000 μm or less.
4. The pressure-sensitive adhesive sheet for stealth dicing according to any one of claims 1 to 3, characterized in that the pressure-sensitive adhesive layer is composed of an energy ray-curable pressure-sensitive adhesive.
5. The pressure-sensitive adhesive sheet for stealth dicing according to any one of claims 1 to 4, wherein the storage modulus of the base material at 0 ℃ is 100MPa or more and 1500MPa or less.
6. A method for manufacturing a semiconductor device, comprising:
a bonding step of bonding the adhesive layer of the adhesive sheet for stealth dicing of any one of claims 1 to 5 to a semiconductor wafer;
a modified layer forming step of forming a modified layer in the semiconductor wafer; and
and a cooling and expanding step of expanding the adhesive sheet for stealth dicing in an environment of-20 ℃ to 10 ℃ to cut and separate the semiconductor wafer having the modified layer formed therein into individual chips.
7. The method for manufacturing a semiconductor device according to claim 6, further comprising: and a laminating step of laminating a bonding film on a surface of the semiconductor wafer bonded to the stealth dicing adhesive sheet, the surface being on the opposite side to the stealth dicing adhesive sheet side.
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| JP2017130299 | 2017-07-03 | ||
| JP2017-130299 | 2017-07-03 | ||
| PCT/JP2018/003592 WO2019008808A1 (en) | 2017-07-03 | 2018-02-02 | Adhesive sheet for stealth dicing, and production method for semiconductor device |
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| CN110832620B CN110832620B (en) | 2024-01-02 |
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| JP (1) | JP7062653B2 (en) |
| KR (1) | KR102560370B1 (en) |
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| WO2019008807A1 (en) * | 2017-07-03 | 2019-01-10 | リンテック株式会社 | Adhesive sheet for stealth dicing, and production method for semiconductor device |
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| JPWO2019008808A1 (en) | 2020-05-07 |
| WO2019008808A1 (en) | 2019-01-10 |
| KR102560370B1 (en) | 2023-07-27 |
| JP7062653B2 (en) | 2022-05-06 |
| CN110832620B (en) | 2024-01-02 |
| KR20200024126A (en) | 2020-03-06 |
| TWI762576B (en) | 2022-05-01 |
| TW201906957A (en) | 2019-02-16 |
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