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CN110820023A - Method for preparing ultra-precise microstructure radiating fin - Google Patents

Method for preparing ultra-precise microstructure radiating fin Download PDF

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Publication number
CN110820023A
CN110820023A CN201911036539.1A CN201911036539A CN110820023A CN 110820023 A CN110820023 A CN 110820023A CN 201911036539 A CN201911036539 A CN 201911036539A CN 110820023 A CN110820023 A CN 110820023A
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China
Prior art keywords
microstructure
silicon wafer
metal layer
photoresist
ultra
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CN201911036539.1A
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Chinese (zh)
Inventor
李延钢
许鑫
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Suzhou Shengli Precision Manufacturing Technology Co Ltd
Suzhou Victory Precision Manufacture Co Ltd
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Suzhou Shengli Precision Manufacturing Technology Co Ltd
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Priority to CN201911036539.1A priority Critical patent/CN110820023A/en
Publication of CN110820023A publication Critical patent/CN110820023A/en
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2029—Modifications to facilitate cooling, ventilating, or heating using a liquid coolant with phase change in electronic enclosures
    • H05K7/20336—Heat pipes, e.g. wicks or capillary pumps
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • C25D5/022—Electroplating of selected surface areas using masking means
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4871—Bases, plates or heatsinks
    • H01L21/4882—Assembly of heatsink parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Thermal Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Weting (AREA)

Abstract

The invention discloses a preparation method of an ultra-precise microstructure radiating fin, which comprises the following steps: etching a projection or a concave hole of a microstructure on the surface of a silicon wafer to obtain a silicon wafer mold; transferring the microstructure on the silicon wafer mold to a transparent substrate; transferring the microstructure on the transparent substrate onto a metal layer, wherein the microstructure transferred by the adhesive layer is obtained on the surface of the metal layer; etching the glue layer at the bottom of the microstructure, which is in contact with the metal layer; and depositing a metal microstructure which is made of the same material as the metal layer at the bottom of the concave hole of the microstructure of the metal layer by adopting an electrochemical deposition method, and removing the redundant glue layer to obtain the metal radiating fin with the ultra-precise microstructure on the surface. The prepared microstructure has good consistency, the effective area of the capillary structure can be effectively increased, and the generation of thermal resistance in the heat conduction process of the capillary structure is reduced.

Description

Method for preparing ultra-precise microstructure radiating fin
Technical Field
The invention relates to a production process of a radiating fin, in particular to a preparation method of an ultra-precise micro-structure radiating fin.
Background
With the development of LED and microelectronic technologies, the integration of chips is continuously improved, and the heating power thereof is continuously increased, and in order to effectively realize the heat dissipation of these high heat flux heating devices in high power heating elements in some semiconductor manufacturing equipment, not only efficient heat absorption at relatively low temperature is required, but also the absorbed heat needs to be effectively transported to a heat layer and efficiently released, and meanwhile, a passive heat dissipation element satisfying these functions is a heat pipe, wherein a flat heat pipe is increasingly applied to the heat dissipation of chips due to its advantages such as good heat absorption property and shape being easily attached to the chips.
Patent No. CN 104142087 a discloses a method for manufacturing a heat sink for improving the thermal efficiency of a heat sink, comprising the following steps: drawing a film by using a film machine and outputting the film, coating a photosensitive adhesive layer on two sides of a metal material by using a printing machine for silk screen printing or a coating machine, drying the photosensitive adhesive layer by using an oven, placing the film and the metal material with the photosensitive adhesive layer into an exposure machine for exposure to form a new photosensitive adhesive layer, placing the exposed metal material with the new photosensitive adhesive layer into a developing solution for development and spraying, removing an unexposed photosensitive adhesive area to form a microstructure texture, drying by using the oven, placing the dried metal material with the microstructure texture into a spraying etching machine for etching or dipping etching, forming the etched metal material with the new structure, and anodizing or spraying a coating on the surface of the metal material to form a protective layer after etching. Although the surface area of the radiating fin manufactured by the method is increased by one time or more, the contact area of the capillary structure of the existing radiating fin and the evaporation cavity is small, and the generation of thermal resistance in the heat conduction process of the capillary structure is increased.
Disclosure of Invention
In order to solve the technical problems, the invention provides a preparation method of an ultra-precise microstructure radiating fin, the prepared microstructure has good consistency, the effective area of a capillary structure can be effectively increased, and the generation of thermal resistance in the heat conduction process of the capillary structure is reduced.
The technical scheme of the invention is as follows:
a preparation method of an ultra-precise microstructure radiating fin comprises the following steps:
s01: etching a projection or a concave hole of a microstructure on the surface of a silicon wafer to obtain a silicon wafer mold;
s02: transferring the microstructure on the silicon wafer mold to a transparent substrate;
s03: transferring the microstructure on the transparent substrate onto a metal layer, wherein the microstructure transferred by the adhesive layer is obtained on the surface of the metal layer;
s04: etching the glue layer at the bottom of the microstructure, which is in contact with the metal layer;
s05: and depositing a metal microstructure which is made of the same material as the metal layer at the bottom of the concave hole of the microstructure of the metal layer by adopting an electrochemical deposition method, and removing the redundant glue layer to obtain the metal radiating fin with the ultra-precise microstructure on the surface.
In a preferred technical solution, the preparation of the silicon wafer mold in step S01 includes the following steps:
s11: after cleaning and baking the silicon wafer, preparing a hexamethyl diamine silane base film on the surface of the silicon wafer;
s12: preparing a mask with an array microstructure;
s13: rotationally coating photoresist on a silicon wafer to obtain a uniform photoresist film covering layer;
s14: after the photoresist is coated, soft baking is carried out on the silicon wafer, and residual solvent in the photoresist is removed;
s15: after the surface of the silicon wafer is aligned and focused with the mask, ultraviolet light is used for irradiating, and the photoresist which is not shielded by the mask is subjected to exposure reaction;
s16: dissolving a photoresist dissoluble area caused by exposure by using a chemical developing solution to enable a visible pattern to appear on a silicon chip, distinguishing an area needing etching and an area protected by the photoresist, spinning off the redundant developing solution after the development is finished, cleaning by using high-purity water and spin-drying;
s17: carrying out heat drying treatment on the developed silicon wafer;
s18: and (3) carrying out dry etching on the silicon wafer, removing the residual photoresist on the surface of the silicon wafer after the etching is finished, and etching a projection or a concave hole of the microstructure on the surface of the silicon wafer.
In a preferred technical solution, the step S02 specifically includes the following steps:
s21: placing a silicon wafer die on a platform, dispensing shadowless glue above a silicon wafer pattern area, then placing a PET film above the silicon wafer pattern area, and rolling from the dispensing side to the other side by using a rubber roller to coat the entire pattern area with the shadowless glue;
s22: curing the imprinted silicon wafer mold;
s23: and (3) tearing the PET on the cured silicon wafer mold off the silicon wafer, and transferring the pattern on the silicon wafer onto the PET film to obtain the soft film.
In a preferred technical solution, the step S03 specifically includes the following steps:
s31: placing a metal layer on a platform, dispensing the shadowless glue on the metal layer, then placing a soft film on the metal layer, and rolling from the dispensing side to the other side by using a rubber roller to coat the shadowless glue on the whole pattern area;
s32: curing the imprinted flexible film and the metal layer;
s33: and tearing the cured flexible film from the metal layer, and transferring the pattern on the flexible film onto the metal layer.
In a preferred embodiment, in step S04, the glue layer at the bottom of the microstructure and in contact with the metal layer is etched away by an anisotropic method.
In a preferred technical solution, in the step S05, the obtained metal heat sink with ultra-precise microstructure is immersed in an alkaline solution to remove an excess adhesive layer.
Compared with the prior art, the invention has the advantages that:
the microstructure prepared by the process has good consistency, and the process can be used for manufacturing various microstructures, so that the heat dissipation efficiency of the heat dissipation plate is better improved, the effective area of the capillary structure can be effectively increased, and the generation of thermal resistance in the heat conduction process of the capillary structure is reduced.
Drawings
The invention is further described with reference to the following figures and examples:
FIG. 1 is a flow chart of a method for manufacturing an ultra-precise microstructure heat sink according to the present invention;
FIG. 2 is a cross-sectional view of an ultra-precise micro-structure heat sink of the present invention;
FIG. 3 is a schematic view of an ultra-precise microstructure heat sink of the present invention;
FIG. 4 is a schematic structural view of a silicon wafer mold;
FIG. 5 is a cross-sectional view of a silicon wafer mold;
FIG. 6 is a schematic diagram of an imprint for soft film fabrication;
FIG. 7 is a schematic diagram of the separation of the soft membrane;
FIG. 8 is a schematic view of copper foil transfer printing imprint;
FIG. 9 is a schematic view of the delamination of a copper foil transfer;
FIG. 10 is a schematic view of a UV glue etching process;
FIG. 11 is a schematic view of an electroformed copper foil process.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
Example (b):
the preferred embodiments of the present invention will be further described with reference to the accompanying drawings.
As shown in fig. 1, a method for manufacturing an ultra-precise microstructure heat sink includes the following steps:
s01: etching a projection or a concave hole of a microstructure on the surface of a silicon wafer to obtain a silicon wafer mold;
s02: transferring the microstructure on the silicon wafer mold to a transparent substrate;
s03: transferring the microstructure on the transparent substrate onto a metal layer, wherein the microstructure transferred by the adhesive layer is obtained on the surface of the metal layer;
s04: etching the glue layer at the bottom of the microstructure, which is in contact with the metal layer;
s05: and depositing a metal microstructure which is made of the same material as the metal layer at the bottom of the concave hole of the microstructure of the metal layer by adopting an electrochemical deposition method, and removing the redundant glue layer to obtain the metal radiating fin with the ultra-precise microstructure on the surface.
The microstructure is that the volume of the convex block is very small or the volume of the concave hole is very small; the gaps between the bumps are narrow; the wall plate between the concave holes is very thin. The shape may be triangular or circular or polygonal, etc. The present embodiment is illustrated by taking a circular shape as an example, the metal layer may be stainless steel, copper, tin, etc., and the present embodiment is illustrated by taking a copper foil as an example. The heat sink 100 of the metal heat sink having the ultra-precise microstructure is prepared as shown in fig. 2 and 3. The aperture of the manufactured microstructure is 3 +/-0.5 um, the distance between the two apertures is 5 +/-0.5 um, and the precision is ultrahigh.
The invention mainly combines the silicon wafer mold preparation, soft film preparation, UV transfer printing, plasma etching and electroplating processes, and the specific process is as follows:
first, silicon chip mould making
1. Gas phase film forming base film of silicon wafer
After the silicon wafer is cleaned and baked, hexamethyl diamine alkane is used to form a base film by the processes of soaking, spraying or Chemical Vapor Deposition (CVD) and the like, and the base film enables the surface of the silicon wafer to be hydrophobic and has strong binding force to photoresist. The nature of the carrier film is to act as a linker for the silicon wafer and photoresist, and to be chemically compatible with these materials.
2. Making a mask
And manufacturing a positive mask according to the shape of the microstructure to be manufactured, wherein the aperture of the microstructure is 3 +/-0.5 um, and the distance between the two apertures is 5 +/-0.5 um.
3. Rotary gluing of silicon wafer
After the base film is formed, the surface of the silicon wafer is uniformly covered with photoresist. And placing the silicon wafer on a vacuum chuck of spin coating equipment, wherein the bottom of the chuck is connected with a rotating motor. The photoresist is dispensed onto the wafer while the wafer is stationary or rotating very slowly. And then accelerating the rotation of the silicon wafer to a certain rotation speed, stretching the photoresist to the surface of the whole silicon wafer by virtue of centrifugal action, continuously rotating to remove redundant photoresist, obtaining a uniform photoresist film covering layer on the silicon wafer, and rotating until the solvent is volatilized, wherein the photoresist film is stopped after being almost dried.
4. Soft baking
After the photoresist is coated, the silicon wafer is subjected to soft baking, residual solvent in the photoresist is removed, and the adhesion and uniformity of the photoresist are improved. The photoresist that is not soft-baked is easily tacky and contaminated with particles, adhesion is insufficient, and a difference in dissolution occurs during development due to an excessively high solvent content, making it difficult to distinguish between exposed and unexposed photoresist.
5. Exposure method
After the surface of the silicon wafer is aligned and focused with a manufactured mask plate (quartz mask), ultraviolet light is used for irradiating, and the photoresist at the part which is not shielded by the mask is subjected to exposure reaction, so that the transfer from the mask to the silicon wafer is realized.
6. Development
And dissolving the photoresist dissoluble area caused by exposure by using a chemical developing solution to enable a visible pattern to appear on the silicon chip, and distinguishing the area needing etching and the area protected by the photoresist. After the development is finished, surplus developing solution is spun off by rotation, and the developing solution is dried after being cleaned by high-purity water.
7. Hard coating
The developed silicon wafer is subjected to heat baking treatment, the temperature is higher than that of soft baking, the purpose is to evaporate the residual solvent to harden the photoresist and improve the adhesion of the photoresist to the surface of the silicon wafer, and the step is very key to the processes of photoresist stabilization, subsequent etching and the like.
8. Dry etching
Exposing the surface of the silicon wafer in inert gas, bombarding a window formed by the photoresist through plasma generated by the gas, and reacting with the silicon wafer to remove the photoresist in the groove.
9. Resist stripping
After etching is completed, residual photoresist on the surface of the silicon wafer is removed through soaking in a photoresist removing solution, the structure of the obtained silicon wafer mold 10 is shown in fig. 4 and 5, and the surface of a silicon wafer 11 is provided with an array of cylindrical holes 12.
Second, soft film fabrication (transfer the pattern on the silicon wafer to the PET film process, to achieve the soft film preparation)
1. Embossing
The silicon wafer die 10 is placed on a platform, UV glue 21 is dispensed above the silicon wafer pattern area, then a PET film 22 is placed above the silicon wafer pattern area, and a rubber roller is used for rolling from the dispensing side to the other side, so that the UV glue 21 coats the whole pattern area, as shown in FIG. 6.
2. Curing
And (4) placing the imprinted silicon wafer mold under a UV lamp for irradiation, and taking out after the UV glue is cured.
3. Film separation
The cured PET on the silicon wafer mold 10 is peeled off from the silicon wafer, and the pattern on the silicon wafer is transferred to the PET film, so that the obtained flexible film 20 is shown in fig. 7.
Third, copper foil impression (transfer the pattern on the soft film to the copper foil to obtain the copper foil with microstructure)
1. Embossing
The copper foil 30 was placed on a stage, UV glue 31 was dotted on the copper foil 30, and then a PET film 32 was placed on the copper foil 30, and a rubber roller was rolled from the glue-dotted side to the other side, so that the UV glue was coated over the entire pattern area, as shown in fig. 8.
2. Curing
And (4) placing the printed copper foil and the flexible film under a UV lamp for irradiation, and taking out after the UV glue is cured.
3. Film separation
The cured copper foil and the soft film are torn off from the copper foil, and the pattern on the soft film is transferred to the copper foil, so that the dense cylindrical pores 33 transferred by the UV glue layer on the surface of the copper foil are obtained, as shown in FIG. 9.
Four, plasma photoresist removing process
Plasma etching is performed to etch away the UV glue 31 at the bottom of the cylindrical hole by an anisotropic method, as shown in fig. 10.
Fifth, electroplating
The copper sheet is placed in a plating bath and a copper cylinder 41 is grown from the round hole of the copper foil 40 by controlling the plating conditions using an electrochemical deposition method, as shown in fig. 11.
And sixthly, after electroplating, putting the copper sheet into an alkaline solution to soak, removing the UV glue 42 between the surface and the electroplated and grown copper column 101, and then obtaining the copper foil radiating fin 100 with the surface covered with the ultra-precise copper column and the bottom provided with the copper substrate 102, as shown in figures 11, 2 and 3.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.

Claims (6)

1. A preparation method of an ultra-precise microstructure radiating fin is characterized by comprising the following steps:
s01: etching a projection or a concave hole of a microstructure on the surface of a silicon wafer to obtain a silicon wafer mold;
s02: transferring the microstructure on the silicon wafer mold to a transparent substrate;
s03: transferring the microstructure on the transparent substrate onto a metal layer, wherein the microstructure transferred by the adhesive layer is obtained on the surface of the metal layer;
s04: etching the glue layer at the bottom of the microstructure, which is in contact with the metal layer;
s05: and depositing a metal microstructure which is made of the same material as the metal layer at the bottom of the concave hole of the microstructure of the metal layer by adopting an electrochemical deposition method, and removing the redundant glue layer to obtain the metal radiating fin with the ultra-precise microstructure on the surface.
2. The method for manufacturing an ultra-precise microstructure heat sink according to claim 1, wherein the manufacturing of the silicon wafer mold in the step S01 includes the steps of:
s11: after cleaning and baking the silicon wafer, preparing a hexamethyl diamine silane base film on the surface of the silicon wafer;
s12: preparing a mask with an array microstructure;
s13: rotationally coating photoresist on a silicon wafer to obtain a uniform photoresist film covering layer;
s14: after the photoresist is coated, soft baking is carried out on the silicon wafer, and residual solvent in the photoresist is removed;
s15: after the surface of the silicon wafer is aligned and focused with the mask, ultraviolet light is used for irradiating, and the photoresist which is not shielded by the mask is subjected to exposure reaction;
s16: dissolving a photoresist dissoluble area caused by exposure by using a chemical developing solution to enable a visible pattern to appear on a silicon chip, distinguishing an area needing etching and an area protected by the photoresist, spinning off the redundant developing solution after the development is finished, cleaning by using high-purity water and spin-drying;
s17: carrying out heat drying treatment on the developed silicon wafer;
s18: and (3) carrying out dry etching on the silicon wafer, removing the residual photoresist on the surface of the silicon wafer after the etching is finished, and etching a projection or a concave hole of the microstructure on the surface of the silicon wafer.
3. The method for manufacturing an ultra-precise microstructure heat sink according to claim 1, wherein the step S02 specifically includes the steps of:
s21: placing a silicon wafer die on a platform, dispensing shadowless glue above a silicon wafer pattern area, then placing a PET film above the silicon wafer pattern area, and rolling from the dispensing side to the other side by using a rubber roller to coat the entire pattern area with the shadowless glue;
s22: curing the imprinted silicon wafer mold;
s23: and (3) tearing the PET on the cured silicon wafer mold off the silicon wafer, and transferring the pattern on the silicon wafer onto the PET film to obtain the soft film.
4. The method for manufacturing an ultra-precise microstructure heat sink according to claim 3, wherein the step S03 specifically includes the steps of:
s31: placing a metal layer on a platform, dispensing the shadowless glue on the metal layer, then placing a soft film on the metal layer, and rolling from the dispensing side to the other side by using a rubber roller to coat the shadowless glue on the whole pattern area;
s32: curing the imprinted flexible film and the metal layer;
s33: and tearing the cured flexible film from the metal layer, and transferring the pattern on the flexible film onto the metal layer.
5. The method for manufacturing an ultra-precise microstructure heat sink as claimed in claim 1, wherein the step S04 is to etch away the glue layer at the bottom of the microstructure contacting the metal layer by using an anisotropic method.
6. The method for manufacturing an ultra-precise microstructure heat sink sheet according to claim 1, wherein the ultra-precise microstructure metal heat sink sheet obtained in step S05 is immersed in an alkaline solution to remove the excess glue layer.
CN201911036539.1A 2019-10-29 2019-10-29 Method for preparing ultra-precise microstructure radiating fin Pending CN110820023A (en)

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CN114193925A (en) * 2021-12-10 2022-03-18 青岛天仁微纳科技有限责任公司 Automatic copying and imprinting integrated equipment and use method thereof
CN114551702A (en) * 2022-02-25 2022-05-27 连云港杰瑞电子有限公司 LED lamp radiator, manufacturing method of radiator and LED lamp
CN114561672A (en) * 2022-02-18 2022-05-31 南京工业大学 Electrochemical additive manufacturing method and device for preparing limited-area pattern based on photoetching layering

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