CN110828433A - Elastic compression joint packaging structure - Google Patents
Elastic compression joint packaging structure Download PDFInfo
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- CN110828433A CN110828433A CN201910941745.0A CN201910941745A CN110828433A CN 110828433 A CN110828433 A CN 110828433A CN 201910941745 A CN201910941745 A CN 201910941745A CN 110828433 A CN110828433 A CN 110828433A
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- 229910052802 copper Inorganic materials 0.000 claims abstract description 60
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- 229910052751 metal Inorganic materials 0.000 claims description 65
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- 238000002788 crimping Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
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- 238000001746 injection moulding Methods 0.000 claims description 4
- 229920001778 nylon Polymers 0.000 claims description 4
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L2224/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention provides an elastic compression joint packaging structure which comprises a subunit (1), a shell (2), a grid circuit board (3) and an emitter copper plate (4); the sub-unit (1) is positioned in the shell (2), the grid circuit board (3) is positioned at the bottom of the sub-unit (1), and the shell (2) and the grid circuit board (3) are fixed on the emitter copper plate (4); the subunit (1) includes semiconductor power device (6) and location frame (12), location frame (12) are located semiconductor power device (6) outside, and not only the reliability is high, and can satisfy high voltage level encapsulation demand. According to the invention, the encapsulation protection of the semiconductor power device is completed by matching the double-sided welding or sintering technology of the semiconductor power device with the insulating medium, the 20kV insulating matching of the elastic compression joint packaging structure is met by the design of the creepage distance and the electric clearance, the number of subunits can be selected according to the current level, the design flexibility is high, the universality is good, and the processing is easy.
Description
Technical Field
The invention relates to the technical field of microelectronic packaging, in particular to an elastic compression joint packaging structure.
Background
At present, semiconductor power devices are developed to new power electronic devices with higher voltage, larger capacity, higher efficiency and higher junction temperature, and the semiconductor power devices are receiving attention due to their superior physicochemical properties. Firstly, the single device of the semiconductor power device has high withstand voltage (the withstand voltage capability of the single device exceeds 27kV is realized at present), the loss is low (about one tenth of that of a silicon device of the same grade), and the total number of series-parallel devices required for realizing the high-voltage power electronic device can be greatly reduced, so that the design of the device can be simplified, and the reliability of the system can be improved. Secondly, due to the high carrier mobility and the saturation drift velocity of the semiconductor power device, the working frequency of the semiconductor power device can reach more than 10 times of that of a silicon power electronic device, the energy conversion loss of the device per se is greatly reduced due to high-frequency work, and a novel topological structure which cannot be realized by the traditional silicon power electronic device can be realized. In addition, the SiC power electronic device can normally work in a high-temperature environment (more than 150 ℃), the heat conductivity is as high as 4.9W/(cm.K), the heat dissipation design of the system can be greatly simplified, and the whole system becomes more compact.
The semiconductor power device can be divided into a soldering package and a crimping package according to a packaging mode, wherein the crimping package realizes thermodynamic and electrical connection by using pressure, and compared with the soldering package, the crimping package has the following characteristics: double-sided heat dissipation is realized, so that a better heat dissipation channel and stronger heat dissipation capacity are realized; the failure mode is short circuit failure, and the modules are easy to be applied in series; the power cycle capability is greatly enhanced without interconnecting wires, and the parasitic parameters are small. The compression joint packaging is divided into elastic compression joint packaging and rigid compression joint packaging, and compared with rigid compression joint packaging, the elastic compression joint packaging adopts grouping packaging, so that the implementation is convenient, meanwhile, the tolerance of a disc spring in the elastic compression joint packaging to parts of a packaging structure is higher, the balance of bearing pressure of a semiconductor power device is easier to realize, and the compression joint packaging is particularly suitable for the semiconductor power device with high power density and small chip area.
The semiconductor power device of high voltage level has brought bigger challenge for packaging structure design and realization, insulating cooperation problem during the encapsulation is especially outstanding, the external insulation of encapsulation needs ceramic or resin composite material and the more complicated umbrella crowd structure of high relative electric leakage index to satisfy the requirement of high-pressure application to electric clearance and creepage distance, simultaneously inside packaging structure, the insulating embedment protection of chip needs the embedment material of higher electric field endurance on the one hand, on the other hand needs carry out the embedment technology development of high reliability.
The defects of the packaging structure for the semiconductor power device in the prior art are mainly as follows:
1. the failure mode of the welding packaging structure is open circuit and is not suitable for large-scale series connection application; the chips are interconnected by using a bonding aluminum wire, and the bonding wire bears a transverse acting force in the process of periodic switching of a device, so that the bonding point is fatigued, and the phenomena of falling and breaking of the bonding wire occur, so that the reliability of a packaging structure is low.
2. Aiming at a compression joint packaging structure, the highest voltage grade of the existing silicon IGBT is 6.5kV, the highest voltage grade of the existing thyristor is 8.5kV, and the structure design, the insulation matching, the insulation encapsulation process and the like of the silicon IGBT can not meet the packaging requirements of higher voltage grade.
Disclosure of Invention
In order to overcome the defects of low reliability and incapability of meeting the requirement of high-voltage-level packaging in the prior art, the invention provides an elastic compression joint packaging structure, which comprises a subunit (1), a shell (2), a grid circuit board (3) and an emitter copper plate (4); the sub-unit (1) is positioned in the shell (2), the grid circuit board (3) is positioned at the bottom of the sub-unit (1), and the shell (2) and the grid circuit board (3) are fixed on the emitter copper plate (4); the subunit (1) includes semiconductor power device (6) and location frame (12), and location frame (12) are located semiconductor power device (6) outside, and not only the reliability is high, and can satisfy high voltage level encapsulation demand.
In order to achieve the purpose of the invention, the invention adopts the following technical scheme:
the invention provides an elastic compression joint packaging structure which comprises a subunit (1), a shell (2), a grid circuit board (3) and an emitter copper plate (4);
the sub-unit (1) is positioned in the shell (2), the grid circuit board (3) is positioned at the bottom of the sub-unit (1), and the shell (2) and the grid circuit board (3) are fixed on the emitter copper plate (4);
the subunit (1) comprises a semiconductor power device (6) and a positioning frame (12), wherein the positioning frame (12) is positioned outside the semiconductor power device (6).
The positioning frame (12) comprises an inner groove, an E pole upright post, a G pole upright post, a guide clapboard and an umbrella skirt;
the guide partition plate and the umbrella skirt are respectively positioned at the lower side and the outer side of the inner groove, and the E pole stand column and the G pole stand column are both vertically arranged in the inner groove;
the umbrella skirt comprises at least two layers of L-shaped umbrella skirt pieces which are arranged in sequence.
The positioning frame (12) adopts nylon as a base material, is added with a flame retardant and a stabilizer, and is molded by die sinking and injection molding.
The subunit (1) further comprises a collector molybdenum plate (5), a bonding wire (7), an emitter metal column (8), a substrate (9), a gate metal column (10) and a spring assembly (11);
the upper edge of the positioning frame (12) is fixed with the lower edge of the collector electrode molybdenum plate (5), the collector electrode of the semiconductor power device (6) is fixed with the lower surface of the collector electrode molybdenum plate (5), the emitter electrode of the semiconductor power device is fixed with the upper end of the emitter electrode metal column (8), and the grid electrode of the semiconductor power device is fixed with the substrate (9) through a bonding wire (7);
the upper surface of the substrate (9) is fixed with the lower surface of the collector electrode molybdenum plate (5), and the lower surface of the substrate is fixed with the upper end of the grid electrode metal column (10);
the spring assembly (11) is positioned at the lower parts of the emitter metal column (8) and the grid metal column (10) and positioned inside the positioning frame (12), and is transversely fixed through the positioning frame (12).
The spring assembly (11) comprises a directional inserted bar (14), a through-flow copper bar (15), a spring set (16), a guide sleeve (17) and a bus copper plate (18);
the spring assembly (11) is transversely fixed by the positioning frame (12);
the upper end of the directional inserted bar (14) is aligned and contacted with the lower ends of the emitting electrode metal column (8) and the grid electrode metal column (10), the guide sleeve (17) is of a hollow structure, the lower end of the directional inserted bar (14) sequentially penetrates through the upper end of the through-flow copper bar (15), the spring group (16), the lower end of the through-flow copper bar (15) and the guide sleeve (17) and is inserted into the confluence copper plate (18), and the lower end of the directional inserted bar (14) is fixed with the confluence copper plate (18).
The spring group (16) comprises a plurality of disc springs which are combined in an involutory mode;
the number of the disc springs is even and is not less than six.
And grooves are formed in the side surfaces of the emitting electrode metal column (8) and the grid electrode metal column (10).
The subunit (1) is filled with an insulating medium (13), and the height of the insulating medium (13) is lower than the sum of the heights of the emitter metal column (8) and the semiconductor power device (6);
the sum of the heights of the emitter metal column (8) and the semiconductor power device (6) is equal to the sum of the heights of the gate metal column (10) and the substrate.
The insulating medium (13) adopts silicone gel or epoxy resin.
The directional inserted bar (14) is connected with the bus copper plate (18) in a riveting mode.
The collector of the semiconductor power device (6) is fixed with the collector molybdenum plate (5), the emitter of the semiconductor power device (6) is fixed with the emitter metal column (8), the substrate (9) is fixed with the collector molybdenum plate (5), and the substrate (9) is fixed with the grid metal column (10) in a welding mode or a sintering mode; the positioning frame (12) and the collector electrode molybdenum plate (5) are fixed through sealant.
The substrate (9) is made of ceramic, and the ceramic is made of aluminum nitride ceramic;
the emitter metal column (8) and the grid metal column (10) are made of molybdenum or copper, the surfaces of the emitter metal column (8) and the grid metal column (10), the surface of the semiconductor power device (6) and the lower surface of the collector molybdenum plate (5) are plated with silver, copper layers are coated on two sides of the substrate (9), the directional inserted rod (14), the guide sleeve (17) and the confluence copper plate (18) are made of copper, and the copper layers, the surfaces of the directional inserted rod (14), the guide sleeve (17) and the confluence copper plate (18) are sequentially plated with nickel and silver.
The shell (2) is made of sheet molded plastic, and the sheet molded plastic is made of unsaturated polyester glass fiber;
the relative leakage indexes of the shell (2) and the positioning frame (12) are both larger than 600, the electrical clearance between the shell and the positioning frame is larger than 34mm, and the creepage distance between the shell and the positioning frame is larger than 100 mm;
the heat distortion temperature of the positioning frame (12) is higher than 200 ℃.
The shell (2) and the emitter copper plate (4) are fixed through a sealant, and the grid electrode circuit board (3) and the emitter copper plate (4) are fixed in a welding mode or a bonding mode.
The number of the subunits (1) is determined according to the current level, and one or more subunits are selected;
when the number is larger than 1, the plurality of subunits (1) are connected in parallel.
Compared with the closest prior art, the technical scheme provided by the invention has the following beneficial effects:
the invention provides an elastic compression joint packaging structure which comprises a subunit (1), a shell (2), a grid circuit board (3) and an emitter copper plate (4); the sub-unit (1) is positioned in the shell (2), the grid circuit board (3) is positioned at the bottom of the sub-unit (1), and the shell (2) and the grid circuit board (3) are fixed on the emitter copper plate (4); the subunit (1) comprises a semiconductor power device (6) and a positioning frame (12), wherein the positioning frame (12) is positioned outside the semiconductor power device (6), so that the reliability is high, and the high-voltage-level packaging requirement can be met;
the positioning frame (12) adopts nylon as a base material, is added with a flame retardant and a stabilizer, and is molded by mold opening and injection molding, so that the insulation effect of the elastic compression joint packaging structure is ensured, and the reliability of the elastic compression joint packaging structure is improved;
the invention utilizes the double-sided welding or sintering technology of the semiconductor power device (namely, the collector electrode and the collector electrode molybdenum plate of the semiconductor power device, and the emitter electrode metal column of the semiconductor power device are fixed in a welding form or a sintering form), and is matched with an insulating medium to complete encapsulation protection of the semiconductor power device, and the design of creepage distance and electric clearance meets the insulating matching of 20 kV;
according to the invention, the semiconductor power device and the emitter metal column are welded or sintered, so that the fretting wear of the contact surface of the semiconductor power device and the collector molybdenum plate caused by the transverse acting force generated by temperature change in the repeated switching-on and switching-off process of the semiconductor power device is avoided, and the reliability of the semiconductor power device is improved; in addition, micro-gaps are prevented from being formed on the contact surface of the semiconductor device and the insulating medium in the impact or vibration process, and the stability of the elastic compression joint packaging structure is improved;
in the invention, the side surfaces of the emitting electrode metal column and the grid electrode metal column are provided with grooves, so that an insulating medium can be more firmly fixed;
the spring assembly comprises an even number of disc springs which are combined in an involution mode and are mutually independent, and the disc springs play a role in compensating size errors, so that the pressure of each semiconductor power device is basically consistent, the packaging reliability is improved, the processing difficulty of parts is reduced, and the disc spring assembly is particularly suitable for parallel application of a plurality of large-capacity semiconductor power devices;
the invention realizes the electrical connection between the chip and the electrode and the uniform pressure distribution of the semiconductor power device through the spring assembly and the high-precision positioning frame;
the invention can select the number of the subunits according to the current grade, has high design flexibility, good universality and easy processing.
Drawings
FIG. 1 is a side view of an elastic crimp package in an embodiment of the invention;
FIG. 2 is a perspective view of an elastic crimp package structure in an embodiment of the invention;
FIG. 3 is a perspective view of a subunit in an embodiment of the invention;
FIG. 4 is a bottom view of a subunit of an embodiment of the present invention;
FIG. 5 is a cross-sectional view of a subunit in an embodiment of the invention;
FIG. 6 is a top view of a spring assembly in an embodiment of the present invention;
FIG. 7 is a perspective view of a spring assembly in an embodiment of the present invention;
FIG. 8 is a cross-sectional view of a spring assembly in an embodiment of the present invention;
in the figure, 1-subunit, 2-shell, 3-grid circuit board, 4-emitter copper plate, 5-collector molybdenum plate, 6-semiconductor power device, 7-bonding wire, 8-emitter metal column, 9-substrate, 10-grid metal column, 11-spring component, 12-positioning frame, 13-insulating medium, 14-orientation inserted rod, 15-through copper bar, 16-spring group, 17-guide sleeve and 18-confluence copper plate.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
The embodiment of the invention provides an elastic compression joint packaging structure, as shown in fig. 1 and fig. 2, which specifically comprises a subunit 1, a shell 2, a grid circuit board 3 and an emitter copper plate 4;
the sub-unit 1 is positioned in the shell 2, the grid circuit board 3 is positioned at the bottom of the sub-unit 1, and the shell 2 and the grid circuit board 3 are both fixed on the emitter copper plate 4;
as shown in fig. 3 to 5, the subunit 1 includes a semiconductor power device 6 and a positioning frame 12, and the positioning frame 12 is located outside the semiconductor power device 6.
The positioning frame 12 comprises an inner groove, an E pole upright post, a G pole upright post, a guide clapboard and an umbrella skirt;
the guide partition plate and the umbrella skirt are respectively positioned at the lower side and the outer side of the inner groove, and the E pole stand column and the G pole stand column are both vertically arranged in the inner groove;
the umbrella skirt comprises at least two layers of L-shaped umbrella skirt pieces which are arranged in sequence.
The positioning frame 12 is made of nylon as a base material, a flame retardant and a stabilizer are added, and the size deviation of the positioning frame 12 is not more than 0.1mm through mold opening injection molding.
The subunit 1 further comprises a collector molybdenum plate 5, a bonding wire 7, an emitter metal column 8, a substrate 9, a gate metal column 10 and a spring assembly 11;
the upper edge of the positioning frame 12 is fixed with the lower edge of the collector molybdenum plate 5, the collector of the semiconductor power device 6 is fixed with the lower surface of the collector molybdenum plate 5, the emitter of the semiconductor power device is fixed with the upper end of the emitter metal column 8, and the grid of the semiconductor power device is fixed with the substrate 9 through the bonding wire 7;
the upper surface of the substrate 9 is fixed with the lower surface of the collector electrode molybdenum plate 5, and the lower surface of the substrate is fixed with the upper end of the grid metal column 10;
the spring assembly 11 is located at the lower portion of the emitter metal pillar 8 and the gate metal pillar 10, and is located inside the positioning frame 12, which is laterally fixed by the positioning frame 12.
The specific structure of the spring assembly is shown in fig. 6 to 8, and the spring assembly 11 comprises an orientation inserted bar 14, a through-flow copper bar 15, a spring group 16, a guide sleeve 17 and a bus copper plate 18;
the spring assembly 11 is fixed transversely by a positioning frame 12;
the upper end of the directional inserted bar 14 is aligned and contacted with the respective lower ends of the emitting electrode metal column 8 and the grid electrode metal column 10, the guide sleeve 17 is of a hollow structure, the lower end of the directional inserted bar 14 sequentially penetrates through the upper end of the through-flow copper bar 15 (the upper end of the through-flow copper bar 15 is in press-contact with the position between the directional inserted bar 14 and the spring group 16), the spring group 16, the lower end of the through-flow copper bar 15 (namely the lower end of the through-flow copper bar 15 is in press-contact with the position between the spring group 16 and the guide sleeve 17) and the guide sleeve 17, the confluence copper plate 18.
The spring set 16 comprises a plurality of disc springs which are combined in an involution mode, the disc springs are made of 50CrVA, the number of the disc springs is even, the number of the disc springs is not less than six, and the influence of less dimensional tolerance on pressure uniformity is achieved.
The side surfaces of the emitter metal column 8 and the gate metal column 10 are both provided with grooves.
The subunit 1 is filled with an insulating medium 13, and the height of the insulating medium 13 is lower than the sum of the heights of the emitter metal column 8 and the semiconductor power device 6;
the sum of the heights of the emitter metal pillar 8 and the semiconductor power device 6 is equal to the sum of the heights of the gate metal pillar 10 and the substrate.
The insulating medium 13 is required to have excellent electrical insulating properties, low moisture absorption rate, low gas permeability, and chemical resistance, and is made of silicone gel having high insulating properties or epoxy resin having a high glass transition temperature.
The directional inserted bar 14 is connected with the bus copper plate 18 in a riveting mode.
The collector of the semiconductor power device 6 is fixed with the collector molybdenum plate 5, the emitter of the semiconductor power device 6 is fixed with the emitter metal column 8, the substrate 9 is fixed with the collector molybdenum plate 5, and the substrate 9 is fixed with the grid metal column 10 in a welding mode or a sintering mode; the positioning frame 12 and the collector molybdenum plate 5 are fixed by sealant.
The substrate 9 is made of ceramic, and the ceramic is made of aluminum nitride ceramic with high insulating strength and high reliability;
the emitter metal column 8 and the gate metal column 10 need to have good thermal conductivity, the thermal expansion coefficients of the emitter metal column 8 and the gate metal column 10 should have good consistency with the thermal expansion coefficient of the semiconductor power device 6, the respective surfaces are plated with silver for completing sintering or welding with the semiconductor power device 6 and the substrate 9, and the emitter metal column 8 and the gate metal column 10 are made of molybdenum or copper.
The surface of the semiconductor power device 6 and the lower surface of the collector electrode molybdenum plate 5 are plated with silver, copper layers are coated on two sides of the substrate 9, the directional inserting rod 14, the guide sleeve 17 and the bus copper plate 18 are made of copper, and the copper layers, the surfaces of the directional inserting rod 14, the guide sleeve 17 and the bus copper plate 18 are sequentially plated with nickel and silver, so that the contact resistance is small, and the stability is high.
The shell 2 is made of sheet molded plastic, and the sheet molded plastic is made of unsaturated polyester glass fiber; relative electric leakage index of shell 2 is greater than 600, satisfies the requirement of electric clearance and creepage distance through high design and the design of the horizontal slot of multilayer, and shell 2 satisfies the insulating cooperation requirement of 20kV, and electric clearance is greater than 34mm, and creepage distance is greater than 100 mm.
The relative leakage index of the positioning frame 12 is larger than 600, the thermal deformation temperature is higher than 200 ℃, the positioning frame 12 is used for positioning the spring assembly 11, the requirements of electrical clearance and creepage distance are met through height design and multi-layer longitudinal groove design, the positioning frame 12 meets the requirement of 20kV insulation fit, the electrical clearance is larger than 34mm, and the creepage distance is larger than 100 mm.
The shell 2 and the emitter copper plate 4 are fixed through a sealant (namely, the shell 2 is glued on the emitter copper plate 4 through the sealant), and the grid electrode circuit board 3 and the emitter copper plate 4 are fixed in a welding mode or a bonding mode.
The number of the subunits 1 can be determined according to the current level, one or more subunits are selected, in the embodiment of the invention, one subunit 1 is selected, and when the number of the subunits 1 is larger than 1, the subunits 1 are connected in parallel.
Compared with a semiconductor power device made of a Si material, the SiC semiconductor power device has smaller active area capable of bearing pressure, the SiC semiconductor power device is easy to have dislocation to cause short circuit failure, a positioning frame with high precision and high stability is required to support and fix in the design of a crimping and packaging structure, pressure distribution balance is realized, meanwhile, the SiC semiconductor power device is high in power density, the phenomenon of heat concentration is easy to occur, and the heat dissipation path of the device is required to be optimized to improve the heat dissipation capacity of a module. The elastic compression joint packaging structure provided by the embodiment of the invention is used for packaging a semiconductor device, and is more suitable for packaging an IGBT made of high-voltage SiC.
Finally, it should be noted that: the above embodiments are only intended to illustrate the technical solution of the present invention and not to limit the same, and a person of ordinary skill in the art can make modifications or equivalents to the specific embodiments of the present invention with reference to the above embodiments, and such modifications or equivalents without departing from the spirit and scope of the present invention are within the scope of the claims of the present invention as set forth in the claims.
Claims (15)
1. An elastic compression joint packaging structure is characterized by comprising a subunit (1), a shell (2), a grid circuit board (3) and an emitter copper plate (4);
the sub-unit (1) is positioned in the shell (2), the grid circuit board (3) is positioned at the bottom of the sub-unit (1), and the shell (2) and the grid circuit board (3) are fixed on the emitter copper plate (4);
the subunit (1) comprises a semiconductor power device (6) and a positioning frame (12), wherein the positioning frame (12) is positioned outside the semiconductor power device (6).
2. The elastic crimp encapsulation structure according to claim 1, wherein the positioning frame (12) comprises an inner groove, an E pole column, a G pole column, a guide spacer and a shed;
the guide partition plate and the umbrella skirt are respectively positioned at the lower side and the outer side of the inner groove, and the E pole stand column and the G pole stand column are both vertically arranged in the inner groove;
the umbrella skirt comprises at least two layers of L-shaped umbrella skirt pieces which are arranged in sequence.
3. The elastic crimping encapsulation structure according to claim 1, wherein the positioning frame (12) is made of nylon as a base material, a flame retardant and a stabilizer are added, and the positioning frame is formed by mold opening injection molding.
4. The elastic crimp packaging structure according to claim 1, wherein the subunit (1) further comprises a collector molybdenum plate (5), a bonding wire (7), an emitter metal pillar (8), a substrate (9), a gate metal pillar (10) and a spring assembly (11);
the upper edge of the positioning frame (12) is fixed with the lower edge of the collector electrode molybdenum plate (5), the collector electrode of the semiconductor power device (6) is fixed with the lower surface of the collector electrode molybdenum plate (5), the emitter electrode of the semiconductor power device is fixed with the upper end of the emitter electrode metal column (8), and the grid electrode of the semiconductor power device is fixed with the substrate (9) through a bonding wire (7);
the upper surface of the substrate (9) is fixed with the lower surface of the collector electrode molybdenum plate (5), and the lower surface of the substrate is fixed with the upper end of the grid electrode metal column (10);
the spring assembly (11) is positioned at the lower parts of the emitter metal column (8) and the grid metal column (10) and positioned inside the positioning frame (12), and is transversely fixed through the positioning frame (12).
5. The elastic crimp encapsulation according to claim 3, characterized in that the spring assembly (11) comprises an orientation plunger (14), a through-flow copper bar (15), a spring pack (16), a guide sleeve (17) and a busbar plate (18);
the spring assembly (11) is transversely fixed by the positioning frame (12);
the upper end of the directional inserted bar (14) is aligned and contacted with the lower ends of the emitting electrode metal column (8) and the grid electrode metal column (10), the guide sleeve (17) is of a hollow structure, the lower end of the directional inserted bar (14) sequentially penetrates through the upper end of the through-flow copper bar (15), the spring group (16), the lower end of the through-flow copper bar (15) and the guide sleeve (17) and is inserted into the confluence copper plate (18), and the lower end of the directional inserted bar (14) is fixed with the confluence copper plate (18).
6. The elastic crimp packaging structure according to claim 4, wherein the spring set (16) comprises a plurality of disc springs, and the disc springs are combined in an involutory manner;
the number of the disc springs is even and is not less than six.
7. The elastic crimp encapsulation structure according to claim 3, wherein the sides of the emitter metal pillar (8) and the gate metal pillar (10) are provided with grooves.
8. The elastic crimp packaging structure according to claim 6, wherein the subunit (1) is filled with an insulating medium (13), the height of the insulating medium (13) being lower than the sum of the heights of the emitter metal stud (8) and the semiconductor power device (6);
the sum of the heights of the emitter metal column (8) and the semiconductor power device (6) is equal to the sum of the heights of the gate metal column (10) and the substrate.
9. The elastic crimp encapsulation structure according to claim 7, wherein the insulating medium (13) is silicone gel or epoxy resin.
10. The elastic crimp encapsulation according to claim 4, characterized in that the connection between the orientation plug rod (14) and the busbar plate (18) is in the form of a rivet.
11. The elastic crimping packaging structure according to claim 3, wherein the collector of the semiconductor power device (6) and the collector molybdenum plate (5), the emitter of the semiconductor power device (6) and the emitter metal pillar (8), the substrate (9) and the collector molybdenum plate (5), and the substrate (9) and the grid metal pillar (10) are fixed in a welding mode or a sintering mode; the positioning frame (12) and the collector electrode molybdenum plate (5) are fixed through sealant.
12. The elastic crimp packaging structure according to claim 3, wherein the substrate (9) is made of ceramic, and the ceramic is made of aluminum nitride ceramic;
the emitter metal column (8) and the grid metal column (10) are made of molybdenum or copper, the surfaces of the emitter metal column (8) and the grid metal column (10), the surface of the semiconductor power device (6) and the lower surface of the collector molybdenum plate (5) are plated with silver, copper layers are coated on two sides of the substrate (9), the directional inserted rod (14), the guide sleeve (17) and the confluence copper plate (18) are made of copper, and the copper layers, the surfaces of the directional inserted rod (14), the guide sleeve (17) and the confluence copper plate (18) are sequentially plated with nickel and silver.
13. The elastic crimping encapsulation structure according to claim 1, characterized in that the housing (2) is made of sheet molded plastic, which is made of unsaturated polyester glass fiber;
the relative leakage indexes of the shell (2) and the positioning frame (12) are both larger than 600, the electrical clearance between the shell and the positioning frame is larger than 34mm, and the creepage distance between the shell and the positioning frame is larger than 100 mm;
the heat distortion temperature of the positioning frame (12) is higher than 200 ℃.
14. The elastic crimping encapsulation structure according to claim 1, wherein the outer shell (2) and the emitter copper plate (4) are fixed by a sealant, and the grid circuit board (3) and the emitter copper plate (4) are fixed in a welding manner or a bonding manner.
15. The elastic crimping encapsulation structure according to claim 1, characterized in that the number of the subunits (1) is determined according to current level, and one or more subunits are selected;
when the number is larger than 1, the plurality of subunits (1) are connected in parallel.
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