CN110819940B - Evaporation mechanism - Google Patents
Evaporation mechanism Download PDFInfo
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- CN110819940B CN110819940B CN201911201896.9A CN201911201896A CN110819940B CN 110819940 B CN110819940 B CN 110819940B CN 201911201896 A CN201911201896 A CN 201911201896A CN 110819940 B CN110819940 B CN 110819940B
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- crucible
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- vapor deposition
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- 230000007246 mechanism Effects 0.000 title claims abstract description 32
- 238000001704 evaporation Methods 0.000 title claims abstract description 27
- 230000008020 evaporation Effects 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000006185 dispersion Substances 0.000 claims abstract description 9
- 238000010438 heat treatment Methods 0.000 claims abstract description 7
- 238000007740 vapor deposition Methods 0.000 claims description 30
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 abstract description 12
- 238000005452 bending Methods 0.000 abstract description 8
- 238000005253 cladding Methods 0.000 abstract description 2
- 238000005507 spraying Methods 0.000 abstract 1
- 239000000428 dust Substances 0.000 description 8
- 239000011368 organic material Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention provides an evaporation mechanism, which comprises a crucible and a dustproof device, wherein the crucible is arranged above the dustproof device, the interior of the crucible is used for filling evaporation materials, a heating device is arranged on the outer wall of the crucible in a cladding way, a porous dispersion plate is arranged in the middle of the crucible, a nozzle for spraying vapor of the evaporation materials is arranged on the side wall of the upper part of the crucible, the nozzle is communicated with the interior of the crucible, the nozzle is obliquely downwards directed to a substrate placing platform at one side below the dustproof device, the bottom surface of the substrate placing platform is a plane, and the substrate placing platform is used for placing a mask plate and a substrate to be evaporated from top to bottom in sequence. The scheme adopts an evaporation mode that the substrate is arranged at the bottom and the evaporation mechanism is arranged at the top, and the substrate is integrally supported by the substrate placement platform to avoid bending of the substrate, so that the limitation of bending on the thickness and the size of the substrate is avoided; meanwhile, particles can be effectively prevented from falling through the dustproof device, so that the mask plate is prevented from being plugged.
Description
Technical Field
The invention relates to the technical field of vapor deposition equipment, in particular to a vapor deposition mechanism.
Background
Organic Light-Emitting diodes (OLEDs) have been invented and are attracting attention by the industry, and after decades of development, the OLEDs are widely used in the display field due to their characteristics of thinness, flexibility, etc., and are currently the most promising display technology.
The core of an OLED is composed of multiple layers of organic layers of different functions, the thickness of these layers being generallyTo->Between, the thickness of each layer must be precisely controlled; currently, physical vapor deposition is the dominant technique for fabricating organic layers: the organic material is heated in the vacuum cavity to enable the material to be gasified or sublimated, and the organic material is deposited on the substrate with relatively low temperature to form the OLED device with the multilayer film.
The more common practice is: the substrate is arranged at the upper part of the vacuum cavity, the coating surface is downward, the crucible containing the organic material is arranged at the lower part of the cavity, and the organic material is heated and sublimated or gasified in the crucible and deposited on the substrate; because the thickness of the substrate is generally within 1mm and the coating surface is downward, the substrate can only be supported at the non-coating area at the boundary of the substrate, and the middle coating area of the substrate can not be supported, so that the substrate is easy to produce bending under the action of gravity; in order to reduce the substrate's bonding, the size of the substrate must be controlled and a relatively thick thickness maintained, limiting the improvement in production efficiency and cost savings.
Disclosure of Invention
Therefore, it is necessary to provide a vapor deposition mechanism to solve the problem that the conventional vapor deposition mechanism requires a thicker substrate.
In order to achieve the above object, the inventor provides an evaporation mechanism, including crucible and dust keeper, the crucible is arranged in dust keeper top, and the inside coating of crucible is provided with heating device, and the crucible outer wall cladding is provided with porous dispersion board, and crucible upper portion lateral wall is provided with the nozzle that supplies evaporation material steam to spout, and the nozzle communicates with the crucible inside, the nozzle slope is directed downwards at the base plate place platform of dust keeper below one side, and the bottom surface of base plate place platform is the plane, and base plate place platform is used for placing mask plate and the base plate that waits to evaporate from top to bottom in proper order.
Further, the dustproof device comprises a bottom plate and a dustproof plate, the dustproof plate is arranged on the bottom plate, the dustproof plate is provided with a tilting part at the side of the nozzle, the nozzle is arranged at the edge of the side of the crucible, the edge of the tilting part and the edge of the bottom plate at the side of the nozzle are sequentially arranged from the center to the outside in the vertical direction, and the edge of the bottom plate at the side of the nozzle is arranged below the connecting line of the edge of the side of the crucible and the edge of the tilting part of the nozzle.
Further, the edge of the bottom plate on the nozzle side and the edge of the raised portion are spaced apart by one centimeter or more in the vertical direction.
Further, the nozzle is spaced apart from the edge of the raised portion by one centimeter or more in the vertical direction from the edge of the crucible side.
Further, the plurality of nozzles are arranged on the same horizontal plane.
Further, the device also comprises a horizontal reciprocating mechanism, wherein the horizontal reciprocating mechanism is used for driving the crucible and the dustproof device to reciprocate above the substrate placing platform, or: the horizontal reciprocating motion mechanism is used for driving the substrate placing platform to reciprocate below the crucible and the dustproof device.
Further, the crucible is a linear evaporation source crucible.
Further, the porous dispersion plate is made of a high temperature resistant metal material or alloy.
Further, the dust-proof device is made of a high-temperature-resistant metal material or alloy.
Compared with the prior art, the technical scheme adopts an evaporation mode that the substrate is arranged downwards and the evaporation mechanism is arranged upwards, and the substrate is integrally supported by the substrate placement platform so as to avoid bending of the substrate, thereby avoiding the limitation of bending on the thickness and the size of the substrate; meanwhile, particles can be effectively prevented from falling through the dustproof device, so that the mask plate is prevented from being plugged.
Drawings
FIG. 1 is a schematic diagram of a conventional vapor deposition method before modification;
fig. 2 is a schematic diagram of an evaporation mechanism according to an embodiment of the present invention;
FIG. 3 is a schematic view of the position of a crucible and dust guard according to an embodiment of the present invention.
Reference numerals illustrate:
100. a substrate before modification; 101. A substrate support prior to modification; 102. A crucible before improvement;
201. a nozzle; 202. A heating device; 203. Evaporating a material;
204. a porous dispersion plate; 206. A dust-proof device; 2061. A dust-proof plate;
2062. a bottom plate; 2063. 2064 is a raised portion at the boundary of the dust guard;
207. vapor of the evaporation material; 208/209/210, boundaries of vapor at the time of evaporation;
211. a crucible; 212. The movement direction of the substrate placement platform;
213. the movement direction of the crucible and the dust-proof device; 301. A substrate placement platform;
302. a substrate on the substrate placement platform; 303. A mask plate;
401/406 are boundaries of the dust-proof plate in the vertical direction;
402/405, is the boundary of the bottom plate in the vertical direction;
403/404 are boundaries of the crucible in the vertical direction.
Detailed Description
In order to describe the technical content, constructional features, achieved objects and effects of the technical solution in detail, the following description is made in connection with the specific embodiments in conjunction with the accompanying drawings.
Referring to fig. 1, in the prior art, during vapor deposition, a substrate 100 is generally used in a manner that a crucible 102 of a vapor deposition source is arranged at the upper part; since only the edge non-vapor deposition area of the substrate is supported by the substrate holder 101, there is no support structure in the middle, and therefore, bending is unavoidable. The larger the substrate size, the thinner the substrate thickness, and the greater the bending; bending limits the size and thickness of the substrate, which is detrimental to cost savings for improved production efficiency.
Referring to fig. 2, the present invention provides a new vapor deposition mechanism featuring a substrate below and a vapor deposition mechanism above the substrate, which should be placed in a vacuum chamber. The vapor deposition mechanism mainly includes a crucible 211, which is preferably a linear evaporation source crucible, and a dust-proof device 206. The substrate is placed on the substrate placement stage 301, and the mask 303 is placed on the substrate 302. Inside the crucible 211 is an evaporation material (such as organic material) 203, and a heating device 202 is arranged outside the crucible 211, and the heating device is coated on the crucible, so that the whole crucible can be heated. 204 are porous dispersion plates inside, so that vapor of the vapor deposition material can be uniformly discharged, and the porous dispersion plates 204 are generally made of a metal material or alloy (titanium, aluminum, iron, copper, etc.) resistant to high temperatures (> 500 ℃). The crucible 211 has one or more nozzles 201 (gas outlet holes) through which vapor of the vapor deposition material is discharged. The lower part of the vapor deposition mechanism is a dust-proof device 206, and the dust-proof device 206 is generally made of a metal material or alloy (titanium, aluminum, iron, copper, etc.) resistant to high temperatures (> 500 ℃). The dustproof device realizes shielding of steam and avoids steam evaporation to the substrate placing platform. The dust guard should be larger in area than the crucible and nozzle and may be a single plate. Or in some embodiments, the dust-proof device 206 is formed by two parts of the dust-proof plate 2061 and the bottom plate 2062, wherein the dust-proof plate 2061 is arranged at the upper part of the bottom plate 2062 with a certain gap between the two parts; the dust-proof plate 2061 has upward raised portions 2063 and 2064 at the edge, and the raised portion 2063 is a raised portion on the side close to the nozzle. And referring to fig. 2, 301 is a substrate placement stage at the bottom of the chamber, 302 is a substrate placed on the stage, and 303 is a mask plate on 302.
When the invention is used, the substrate 302 can be horizontally placed on the bottom surface of the substrate placing platform 301, and the coating surface of the substrate faces upwards. Because the film plating surface faces upwards, the back surface of the substrate can be supported by a plane, the substrate can not bend, the substrate and the mask plate can be better attached together, the substrate is not limited by the size and the thickness, and a thicker substrate is not needed. And then, when in evaporation, the nozzle arranged downwards on the crucible can enable steam to be evaporated onto the substrate from top to bottom, so that evaporation is completed.
Referring to fig. 2, the heating device 202 heats the vapor deposition material 203, the vapor deposition material 203 is vaporized to form vapor 207, the vapor 207 is ejected from the nozzle 201 at a certain angle, and the height and angle of the raised portion 2063 are appropriately designed, so that vapor deposition of the vapor deposition material 207 on the bottom plate 2062 can be avoided. 208/209/210 is a schematic diagram of the boundary of the steam formation.
Referring to fig. 2, the dust-proof plate 2061 is on the upper surface, the vapor 207 can be evaporated on the dust-proof plate 2061, and along with the accumulation of the vapor 207 on the dust-proof plate 2061, the dust-proof plate 2061 easily generates particles, and the generated particles easily fall off, if falling onto the upper surface of the 303 mask plate, the mask plate is plugged, so that point defects are caused; to improve the drop of particles, a bottom plate 2062 is added; because of the shielding of the dust-proof plate 2061, the vapor 207 cannot be directly evaporated on the bottom plate 2062, so that the bottom plate 2062 can be kept clean, thereby avoiding dropping of particles.
As shown in fig. 3, broken lines 401, 402, 403, 404, 405, 406 are schematic views showing boundary (edge) positions of the crucible 211, the dust-proof plate 2061, and the bottom plate 2062 in the vertical direction; 401 and 406 are the boundaries of the bottom plate 2062, 402 and 405 are the boundaries of the dust plate 2061, and 403 and 404 are the boundaries of the crucible 211 and the nozzle 201. 401 on the right side of 402 and a distance of 1cm or more therebetween, it is ensured that particles on the bottom plate 2062 fall on the dust-proof plate 2061 and do not fall on the mask plate 303; by properly designing the height and angle of the rocker 2063, and the distance between 402 and 403, it is ensured that the dust guard 2061 blocks the material vapor 207 and the bottom plate 2062 is not plated with material; 402 on the right side of 403 and at a distance of 1cm or more, particles falling on the crucible 211 may be caught by the dust-proof plate 2061 and not fall on the bottom plate 2062; the other side is similar principle, 404, 405, 406 are all above 1cm from right to left in turn. As set forth above, it is possible to ensure that: the bottom plate 2062 is not plated with the vapor 207, and the particles falling from the crucible can only fall on the dust-proof plate 2061, so that the bottom plate 2062 is kept in a clean state; the floor 2062 remains clean and the chance of particles falling onto the 303 mask is greatly reduced. Therefore, particles can be effectively prevented from falling on the mask plate (the falling particles can block holes on the mask plate to cause point defects).
Referring to fig. 2, in order to achieve uniform evaporation, either the evaporation mechanism or the substrate must reciprocate; 212 is the movement direction of the substrate placement stages 301, 302, 303, 213 is the movement direction of the vapor deposition mechanism (crucible and dust-proof device); as long as one of the two can realize reciprocating motion, the uniform evaporation of the material can be realized. In the embodiment where the nozzles are plural, the nozzles are preferably located on a straight line, and the direction of the back-and-forth movement is preferably perpendicular to the direction of the straight line where the nozzles are located, so that the vapor deposition of a square plane can be realized. When the reciprocating motion is realized through the reciprocating motion mechanism (such as an electric track), the boundary of nozzle steam is positioned in the plane of the substrate, so that the evaporation of structures outside the substrate is avoided.
It should be noted that, although the foregoing embodiments have been described herein, the scope of the present invention is not limited thereby. Therefore, based on the innovative concepts of the present invention, alterations and modifications to the embodiments described herein, or equivalent structures or equivalent flow transformations made by the present description and drawings, apply the above technical solutions directly or indirectly to other relevant technical fields, all of which are included in the scope of protection of the present patent.
Claims (9)
1. An evaporation mechanism, characterized in that: the device comprises a crucible and a dustproof device, wherein the crucible is arranged above the dustproof device, the inside of the crucible is used for filling vapor deposition materials, a heating device is arranged on the outer wall of the crucible in a coating manner, a porous dispersion plate is arranged in the middle of the crucible, a nozzle for ejecting vapor of the vapor deposition materials is arranged on the side wall of the upper part of the crucible, the nozzle is communicated with the inside of the crucible, the nozzle is obliquely downwards directed to a substrate placement platform at one side below the dustproof device, the bottom surface of the substrate placement platform is a plane, and the substrate placement platform is used for sequentially placing a mask plate and a substrate to be vapor deposited from top to bottom;
the dustproof device comprises a bottom plate and a dustproof plate, the dustproof plate is arranged on the bottom plate, a tilting part is arranged on the dustproof plate at the side of the nozzle, the nozzle is arranged at the edge of the side of the crucible, the edge of the tilting part and the edge of the bottom plate at the side of the nozzle are sequentially arranged from the center to the outside in the vertical direction, and the edge of the bottom plate at the side of the nozzle is positioned below a connecting line of the edge of the side of the crucible and the edge of the tilting part;
the plurality of nozzles are arranged on the same horizontal plane.
2. The vapor deposition mechanism of claim 1, wherein: the edge of the bottom plate on the nozzle side and the edge of the tilting part are spaced by more than one centimeter in the vertical direction.
3. The vapor deposition mechanism of claim 1, wherein: the nozzle is spaced by more than one centimeter between the side edge of the crucible and the edge of the tilting part in the vertical direction.
4. The vapor deposition mechanism of claim 1, wherein: the device also comprises a horizontal reciprocating mechanism, wherein the horizontal reciprocating mechanism is used for driving the crucible and the dust-proof device to reciprocate above the substrate placing platform, or: the horizontal reciprocating motion mechanism is used for driving the substrate placing platform to reciprocate below the crucible and the dustproof device.
5. A vapor deposition mechanism according to any one of claims 1 to 4, wherein: the crucible is a linear evaporation source crucible.
6. The vapor deposition mechanism of claim 1, wherein: the porous dispersion plate is made of a high temperature resistant metallic material.
7. The vapor deposition mechanism of claim 1, wherein: the porous dispersion plate is made of a high temperature resistant alloy.
8. The vapor deposition mechanism of claim 1, wherein: the dust-proof device is made of high-temperature-resistant metal material.
9. The vapor deposition mechanism of claim 1, wherein: the dust-proof device is made of high-temperature resistant alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911201896.9A CN110819940B (en) | 2019-11-29 | 2019-11-29 | Evaporation mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911201896.9A CN110819940B (en) | 2019-11-29 | 2019-11-29 | Evaporation mechanism |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110819940A CN110819940A (en) | 2020-02-21 |
| CN110819940B true CN110819940B (en) | 2024-04-16 |
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| CN201911201896.9A Active CN110819940B (en) | 2019-11-29 | 2019-11-29 | Evaporation mechanism |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111334755B (en) * | 2020-03-18 | 2022-06-07 | 福建华佳彩有限公司 | Evaporation plating device |
| CN111364007B (en) * | 2020-04-26 | 2021-09-28 | 昆明理工大学 | Method and device for vacuum evaporation of magnesium on surface of high-temperature-resistant particle |
| CN115449756A (en) * | 2022-09-21 | 2022-12-09 | 京东方科技集团股份有限公司 | Evaporation plating device |
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| CN1396301A (en) * | 2001-06-22 | 2003-02-12 | 阿尔卑斯电气株式会社 | Vacuum steam coating polymerization device and method for forming organic envelope using the device |
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| Publication number | Publication date |
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| CN110819940A (en) | 2020-02-21 |
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