CN110739398A - Micro-display device anode silver reflecting layer and etching method of anode structure - Google Patents
Micro-display device anode silver reflecting layer and etching method of anode structure Download PDFInfo
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- 238000005530 etching Methods 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 34
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 28
- 239000004332 silver Substances 0.000 title claims abstract description 28
- 239000007789 gas Substances 0.000 claims abstract description 41
- 238000001312 dry etching Methods 0.000 claims abstract description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052786 argon Inorganic materials 0.000 claims abstract description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- 230000000694 effects Effects 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 description 10
- 238000001039 wet etching Methods 0.000 description 7
- 238000002310 reflectometry Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 125000003636 chemical group Chemical group 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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Abstract
本发明公开了一种微显示器件阳极银反射层及阳极结构的蚀刻方法，微显示器件阳极银反射层蚀刻方法是采用氩气作为蚀刻气体，以干法蚀刻对银进行物理轰击蚀刻。本发明中，干法蚀刻利用Ar的电离对银膜进行轰击，可达到对银膜的蚀刻效果。
The invention discloses an etching method for an anode silver reflection layer of a microdisplay device and an anode structure. The etching method for the anode silver reflection layer of a microdisplay device adopts argon gas as an etching gas to perform physical bombardment etching on silver by dry etching. In the present invention, dry etching utilizes Ar ionization to bombard the silver film, so that the effect of etching the silver film can be achieved.
Description
技术领域technical field
本发明属于OLED微显示技术领域，具体涉及一种微显示器件阳极银反射层及阳极结构的蚀刻方法。The invention belongs to the technical field of OLED microdisplay, in particular to an etching method for an anode silver reflection layer and an anode structure of a microdisplay device.
背景技术Background technique
随着显示技术的飞速发展，更轻薄、视角宽、亮度高、响应快、功耗低、柔性好、使用温度宽、清晰度高、发光效率高的显示屏才能适应消费者的新需求；在此几项性能方面，有机发光二极管(OrganicLight-Emitting Diode，OLED)均优于LCD，故目前许多企业投入OLED的研发中，OLED技术也在飞速发展。目前主流OLED工艺为顶发射和底发射两种，其中顶发射因为具备高的开口度、高亮度的优势，而被广泛应用。顶发射，即光由器件上方发出，基板的线路设计不会影响器件的出光面积，相同亮度下OLED的工作电压更低，其寿命相对的也就越高。顶发射需求阳极材料要具备高功函数及良好的化学及形态稳定性，且有良好的导电性，另需求阳极部分具有高的反射率，这样才能够保证发光效率。目前Micro-OLED器件主流阳极部分结构主体为：ITO(导电性好、透明度高、功函数高)作为像素电极的阳极+缓冲层TiN、Ti(避免反射层金属与ITO直接黏附后易peeling及变形的问题)+反射层Al(反射率高，导电性好，延展性能优)+缓冲层TiN、Ti，结构示意如图1；为提高反射层的反射率，可用Ag(反光率极高，可达99％)代替Al(反射率为90％)，且Ag的导电性能及延展性和化学形态稳定性均优于Al，此对Micro-OLED器件性能来说，将是一巨大突破。但目前Ag蚀刻均为湿法蚀刻，湿法蚀刻的精度(线宽＞3μm)，而硅基Micro-OLED器件的精度需求为0.25μm，湿法蚀刻无法达成此精度需求。另一方面，对于所有的湿法蚀刻来说，实质都是通过蚀刻液与待蚀刻材料之间的化学反应来进行蚀刻，故其蚀刻是等方性的，湿法蚀刻银膜后，其Profile不可控制，容易存在底切及内切现象；反射层taper硅基Micro-OLED器件性能影响较大，如taper过大，易造成后续成膜在taper过大处过薄或者缺失，造成线路断路；如taper过小，整体线宽会大于实际测量线宽，线路短路风险高。只能通过干法蚀刻(线宽精度0.1μm～0.5μm)来进行蚀刻，故目前来说对于Ag的干法蚀刻的研究比较迫切。With the rapid development of display technology, thinner and lighter displays, wide viewing angles, high brightness, fast response, low power consumption, good flexibility, wide operating temperature, high definition and high luminous efficiency can meet the new needs of consumers; In terms of these performances, Organic Light-Emitting Diodes (OLEDs) are superior to LCDs. Therefore, many companies are currently investing in the research and development of OLEDs, and OLED technology is also developing rapidly. At present, the mainstream OLED processes are top emission and bottom emission. Among them, top emission is widely used because of its advantages of high aperture and high brightness. Top emission means that the light is emitted from the top of the device. The circuit design of the substrate will not affect the light-emitting area of the device. Under the same brightness, the operating voltage of the OLED is lower, and its lifespan is relatively higher. Top emission requires anode materials with high work function, good chemical and morphological stability, and good electrical conductivity. In addition, the anode part needs to have high reflectivity, so as to ensure luminous efficiency. At present, the main structure of the mainstream anode part of Micro-OLED devices is: ITO (good conductivity, high transparency, high work function) as the anode of the pixel electrode + buffer layer TiN, Ti (to avoid direct adhesion between the reflective layer metal and ITO, easy to peel and deform problem) + reflective layer Al (high reflectivity, good conductivity, excellent ductility) + buffer layer TiN, Ti, the structure is shown in Figure 1; in order to improve the reflectivity of the reflective layer, Ag (high reflectivity, can be (up to 99%) instead of Al (reflectivity of 90%), and Ag's conductivity, ductility and chemical form stability are better than Al, which will be a huge breakthrough for the performance of Micro-OLED devices. However, Ag etching is currently wet etching, and the precision of wet etching (line width > 3 μm), while the precision requirement of silicon-based Micro-OLED devices is 0.25 μm, which cannot be achieved by wet etching. On the other hand, for all wet etching, the essence is to etch through the chemical reaction between the etching solution and the material to be etched, so the etching is isotropic. After wet etching the silver film, its Profile Uncontrollable, undercutting and undercutting are prone to occur; reflective layer taper silicon-based Micro-OLED devices have a great impact on the performance. If the taper is too large, it is easy to cause the subsequent film formation to be too thin or missing where the taper is too large, resulting in circuit breakage; If the taper is too small, the overall line width will be larger than the actual measured line width, and the risk of line short circuit is high. Etching can only be performed by dry etching (with a line width accuracy of 0.1 μm to 0.5 μm), so currently, research on dry etching of Ag is urgent.
发明内容SUMMARY OF THE INVENTION
本发明旨在解决现有技术中存在的技术问题。为此，本发明提供一种微显示器件阳极银反射层及阳极结构的蚀刻方法，目的是实现微显示器中的银作为反射层后的蚀刻。The present invention aims to solve the technical problems existing in the prior art. Therefore, the present invention provides an etching method for an anode silver reflection layer of a microdisplay device and an anode structure, in order to realize the etching after silver in the microdisplay is used as the reflection layer.
为了实现上述目的，本发明采取的技术方案为：In order to achieve the above object, the technical scheme adopted in the present invention is:
一种微显示器件阳极银反射层的蚀刻方法，所述蚀刻方法是采用氩气作为蚀刻气体，以干法蚀刻对银进行物理轰击蚀刻。An etching method for an anode silver reflection layer of a microdisplay device, the etching method uses argon gas as an etching gas, and performs physical bombardment etching on silver by dry etching.
所述干法蚀刻中，蚀刻的气流量控制在100～200sccm，压力控制在1～5mTorr，Source Power(源射频功率)控制在500～800W，Bias power(偏置射频功率)控制在150～200W。In the dry etching, the gas flow of the etching is controlled at 100-200 sccm, the pressure is controlled at 1-5 mTorr, the Source Power (source radio frequency power) is controlled at 500-800W, and the Bias power (bias radio frequency power) is controlled at 150-200W .
一种微显示器件阳极结构的蚀刻方法，包括如下步骤：A method for etching an anode structure of a microdisplay device, comprising the following steps:
步骤一、依次对阳极结构由上到下依次进行干法蚀刻像素层及第二缓冲层；Step 1: Dry etching the pixel layer and the second buffer layer sequentially from top to bottom on the anode structure;
步骤二、采用氩气作为蚀刻气体，以干法蚀刻对银反射层进行物理轰击蚀刻；Step 2, using argon gas as the etching gas to perform physical bombardment etching on the silver reflective layer by dry etching;
步骤三、对第一缓冲层进行干法蚀刻。Step 3, dry etching the first buffer layer.
所述步骤一中干法蚀刻采用Cl2与BCl3作为蚀刻气体，流量大小控制在20～40sccm，压力控制在3～10mTorr，Source Power(源射频功率)控制在500～800W，Biaspower(偏置射频功率)控制在100～150W。In the step 1, dry etching adopts Cl 2 and BCl 3 as etching gas, the flow rate is controlled at 20-40sccm, the pressure is controlled at 3-10mTorr, Source Power (source radio frequency power) is controlled at 500-800W, Biaspower (bias power) is controlled at 500-800W. RF power) is controlled at 100-150W.
所述Cl2与BCl3的气体流量比为1:1。The gas flow ratio of Cl 2 to BCl 3 is 1:1.
所述步骤三中干法蚀刻采用Cl2与BCl3作为蚀刻气体，流量大小控制在50～80sccm，压力控制在3～10mTorr，Source Power(源射频功率)控制在500～800W，Biaspower(偏置射频功率)控制在100～150W。In the step 3, dry etching adopts Cl 2 and BCl 3 as etching gas, the flow rate is controlled at 50-80sccm, the pressure is controlled at 3-10mTorr, Source Power (source radio frequency power) is controlled at 500-800W, Biaspower (bias power) is controlled at 500-800W. RF power) is controlled at 100-150W.
所述像素层为像素电极ITO，像素电极ITO的厚度为
所述第一缓冲层包括Ti层和TiN层，Ti层的厚度为
所述银反射层的厚度为
所述微显示器件为硅基Micro-OLED微显示器件。The micro-display device is a silicon-based Micro-OLED micro-display device.
本发明的有益效果：本发明中，干法蚀刻利用Ar的电离对银膜进行轰击，可达到对银膜的蚀刻效果。此种干法蚀刻方法，对Ag的蚀刻速率可达30nm/min～100nm/min。且为物理轰击，CD(线宽)可做到0.1μm～0.25μm，profile(形貌)较优，能控制在70°～90°，均优于传统湿法蚀刻。此种方式对银膜的蚀刻效果，可满足硅基micro-OLED微显示器件阳极反射层的需求。Beneficial effects of the present invention: In the present invention, dry etching utilizes Ar ionization to bombard the silver film, which can achieve the effect of etching the silver film. In this dry etching method, the etching rate of Ag can reach 30 nm/min to 100 nm/min. And for physical bombardment, CD (line width) can reach 0.1μm ~ 0.25μm, profile (shape) is better, can be controlled at 70 ° ~ 90 °, are better than traditional wet etching. The etching effect of the silver film in this way can meet the requirements of the anode reflection layer of the silicon-based micro-OLED microdisplay device.
附图说明Description of drawings
本说明书包括以下附图，所示内容分别是：This manual includes the following drawings, which are as follows:
图1是现有阳极结构的结构示意图；Fig. 1 is the structural representation of the existing anode structure;
图2是PVD成膜后的结构示意图；Fig. 2 is the structural schematic diagram after PVD film formation;
图3是成膜后的阳极结构上涂布掩膜的结构示意图；Fig. 3 is the structural schematic diagram of coating mask on the anode structure after film formation;
图4是干法蚀刻像素层、第二缓冲层、银膜层和第一缓冲层后的结构示意图；4 is a schematic structural diagram after dry etching the pixel layer, the second buffer layer, the silver film layer and the first buffer layer;
图5是去除掩膜的结构示意图。FIG. 5 is a schematic diagram of the structure of removing the mask.
图中标记为：The figure is marked as:
100、CMOS驱动电路的硅基衬底，110、第一缓冲层，120、反射层，130、第二缓冲层，140、像素层，150、显影后的基板整体结构，160、三次蚀刻后的结构，170，硅基衬底及阳极结构。100. Silicon-based substrate for CMOS drive circuit, 110, first buffer layer, 120, reflective layer, 130, second buffer layer, 140, pixel layer, 150, overall structure of the developed substrate, 160, after three etchings Structure, 170, Si-based substrate and anode structure.
具体实施方式Detailed ways
下面对照附图，通过对实施例的描述，对本发明的具体实施方式作进一步详细的说明，目的是帮助本领域的技术人员对本发明的构思、技术方案有更完整、准确和深入的理解，并有助于其实施。需要说明的是，术语“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对发明的限制。在下述的实施方式中，所述的“第一”、“第二”并不代表结构和/或功能上的绝对区分关系，也不代表先后的执行顺序，而仅仅是为了描述的方便。Below with reference to the accompanying drawings, through the description of the embodiments, the specific embodiments of the present invention will be described in further detail, the purpose is to help those skilled in the art to have a more complete, accurate and in-depth understanding of the concept and technical solutions of the present invention, and contribute to its implementation. It should be noted that the orientation or positional relationship indicated by the terms "up", "down", "front", "rear", "left", "right", "vertical", "inside", "outside", etc. Based on the orientation or positional relationship shown in the drawings, it is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood to limit the invention. In the following embodiments, the “first” and “second” do not represent an absolute distinction relationship in structure and/or function, nor a sequential execution sequence, but are only for the convenience of description.
如图2至图5所示，将已完成阴极制作且含有Drive CMOS电路的硅基衬底100清洗后，进行阳极层成膜：具体是在CMOS驱动电路的硅基衬底上采用PVD电镀工艺依次形成第一缓冲层110；Ag反射层120；第二缓冲层130；像素层140；其中，第一缓冲层中Ti层的厚度为
上述成膜后的像素电极140及第二缓冲层130可采用已有成熟干法蚀刻方法，可得到需求的图形。由于Ag的化学性质稳定，在干法蚀刻时，不易与radical(活性化学基)反应，化学反应不足，故为得到高的Etch rate(蚀刻速率)，可通过控制Ion(离子)，进行物理轰击蚀刻。基于此，干法蚀刻时，利用氩气的电离，通过调整Ar gas Flow(气体流量)、RF power(射频功率)、蚀刻pressure(制程压力)对Ag进行物理轰击，以达到蚀刻效果。The above-mentioned
采用上述蚀刻方法适用于硅基Micro-OLED微显示器件的阳极图形化蚀刻，对硅基Micro-OLED微显示器件阳极图形化蚀刻方法选择干法蚀刻ICP mode(电感耦合等离子体蚀刻方法)。蚀刻的方法是在成膜完成像素电极ITO上进行涂胶、曝光、显影，得到显影后的基板整体结构150；然后对显影后的基板整体结构150进行三次干法蚀刻，得到三次蚀刻后的结构160；对三次蚀刻后的结构160进行STR(湿法去胶，选用常规去胶液，对160结构上的光刻胶进行去除)，得到最终的阳极图形(硅基衬底及阳极结构170)；其中，对阳极结构蚀刻通过三个主蚀刻步骤实现。The above etching method is suitable for anodic patterning etching of silicon-based Micro-OLED microdisplay devices, and dry etching ICP mode (inductively coupled plasma etching method) is selected for the anodic patterning etching method of silicon-based Micro-OLED microdisplay devices. The etching method is to apply glue, expose and develop on the pixel electrode ITO after film formation, so as to obtain the overall structure of the
具体蚀刻步骤如下：The specific etching steps are as follows:
步骤一、完成对像素层140及第二缓冲层130的蚀刻，此步骤蚀刻气体选用Cl2与BCl3，气体流量1：1，流量大小控制在20sccm～40sccm，压力控制在3mTorr～10mTorr，Source Power控制在500W～800W，Bias power控制在100W～150W。Step 1. Complete the etching of the
步骤二，完成对反射层银膜120的蚀刻，此步骤蚀刻气体选用Ar，气流量大小控制在100sccm～200sccm，压力控制在1mTorr～5mTorr，Source Power控制在500W～800W，Biaspower控制在150W～200W。Step 2: Complete the etching of the
步骤三、完成对缓冲层110的蚀刻，此步骤蚀刻气体选用Cl2与BCl3，气体流量1：1，气流量大小控制在50sccm～80sccm，压力控制在3mTorr～10mTorr，Source Power控制在500W～800W，Bias power控制在100W～150W。Step 3: Complete the etching of the
下面通过具体的优选实例进行说明：Described below through specific preferred examples:
实施例1Example 1
在CMOS驱动电路的硅基衬底上采用PVD电镀工艺形成的阳极结构中，第一缓冲层中Ti层的厚度为
对硅基Micro-OLED微显示器件阳极图形化蚀刻方法包括如下步骤：The anode patterned etching method for a silicon-based Micro-OLED microdisplay device includes the following steps:
步骤一、完成对像素层140及第二缓冲层130的蚀刻，此步骤蚀刻气体选用Cl2与BCl3，气体流量1：1，流量大小控制在30sccm，压力控制在5mTorr，Source Power控制在600W，Bias power控制在120W。Step 1. Complete the etching of the
步骤二，完成对反射层银膜的蚀刻，此步骤蚀刻气体选用Ar，气流量大小控制在150sccm，压力控制在3mTorr，Source Power控制在600W，Bias power控制在170W。In step 2, the etching of the silver film of the reflective layer is completed. In this step, Ar is selected as the etching gas, the gas flow is controlled at 150sccm, the pressure is controlled at 3mTorr, the source power is controlled at 600W, and the Bias power is controlled at 170W.
步骤三、完成对第一缓冲层110的蚀刻，此步骤蚀刻气体选用Cl2与BCl3，气体流量1：1，气流量大小控制在60sccm，压力控制在5mTorr，Source Power控制在600W，Bias power控制在120W。Step 3: Complete the etching of the
实施例2Example 2
在CMOS驱动电路的硅基衬底上采用PVD电镀工艺形成的阳极结构中，第一缓冲层中Ti层的厚度为
对硅基Micro-OLED微显示器件阳极图形化蚀刻方法包括如下步骤：The anode patterned etching method for a silicon-based Micro-OLED microdisplay device includes the following steps:
步骤一、完成对像素层140及第二缓冲层130的蚀刻，此步骤蚀刻气体选用Cl2与BCl3，气体流量1：1，流量大小控制在40sccm，压力控制在10mTorr，Source Power控制在500W，Bias power控制在150W。Step 1. Complete the etching of the
步骤二，完成对反射层银膜的蚀刻，此步骤蚀刻气体选用Ar，气流量大小控制在200sccm，压力控制在5mTorr，Source Power控制在800W，Bias power控制在200W。In step 2, the etching of the silver film of the reflection layer is completed. In this step, the etching gas is Ar, the gas flow is controlled at 200sccm, the pressure is controlled at 5mTorr, the Source Power is controlled at 800W, and the Bias power is controlled at 200W.
步骤三、完成对第一缓冲层110的蚀刻，此步骤蚀刻气体选用Cl2与BCl3，气体流量1：1，气流量大小控制在80sccm，压力控制在10mTorr，Source Power控制在500W，Biaspower控制在150W。Step 3: Complete the etching of the
对比例：以铝作为反射层，最终形成阳极结构。Comparative example: The anode structure is finally formed by using aluminum as the reflective layer.
结果表明，反射层由银替代铝后，反射率提升5％以上。而湿法蚀刻银后的线宽精度只能达到3.5μm；以上实施例线宽均可达成0.25μm；The results show that after the reflective layer is replaced by silver, the reflectivity is increased by more than 5%. However, the line width accuracy after wet etching of silver can only reach 3.5 μm; the line width of the above embodiments can all reach 0.25 μm;
以上结合附图对本发明进行了示例性描述。显然，本发明具体实现并不受上述方式的限制。只要是采用了本发明的方法构思和技术方案进行的各种非实质性的改进；或未经改进，将本发明的上述构思和技术方案直接应用于其它场合的，均在本发明的保护范围之内。The present invention has been exemplarily described above with reference to the accompanying drawings. Obviously, the specific implementation of the present invention is not limited by the above manner. As long as the method concept and technical solution of the present invention are adopted for various non-substantial improvements; or the above-mentioned concept and technical solution of the present invention are directly applied to other occasions without improvement, they are all within the protection scope of the present invention. within.
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