[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CN110707665B - Method for protecting short circuit of medium-high voltage IGBT module based on instantaneous power loss - Google Patents

Method for protecting short circuit of medium-high voltage IGBT module based on instantaneous power loss Download PDF

Info

Publication number
CN110707665B
CN110707665B CN201910853379.3A CN201910853379A CN110707665B CN 110707665 B CN110707665 B CN 110707665B CN 201910853379 A CN201910853379 A CN 201910853379A CN 110707665 B CN110707665 B CN 110707665B
Authority
CN
China
Prior art keywords
igbt module
power loss
voltage
instantaneous power
instantaneous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201910853379.3A
Other languages
Chinese (zh)
Other versions
CN110707665A (en
Inventor
孟昭亮
艾胜胜
高勇
杨媛
卢志鹏
方正鹏
吕亚茹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Polytechnic University
Original Assignee
Xian Polytechnic University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Polytechnic University filed Critical Xian Polytechnic University
Priority to CN201910853379.3A priority Critical patent/CN110707665B/en
Publication of CN110707665A publication Critical patent/CN110707665A/en
Application granted granted Critical
Publication of CN110707665B publication Critical patent/CN110707665B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)

Abstract

The invention discloses a method for protecting a short circuit of a high-voltage IGBT (insulated gate bipolar transistor) module based on instantaneous power loss, which comprises the steps of collecting instantaneous collector current and instantaneous collector-emitter voltage of the IGBT module, multiplying the collected collector current and collector-emitter voltage to obtain instantaneous power loss P (t) of the IGBT module, and comparing the instantaneous power loss P (t) with the highest instantaneous power loss P (t) of the IGBT module capable of normally workingmaxMaking a comparison when P (t)>2PmaxAnd in time, short-circuit protection is carried out on the IGBT module. The method for protecting the short circuit of the medium-high voltage IGBT module has small test error and small external interference, and can prolong the service life of the IGBT module.

Description

Method for protecting short circuit of medium-high voltage IGBT module based on instantaneous power loss
Technical Field
The invention belongs to the technical field of IGBT module protection, and relates to a method for protecting a short circuit of a medium-high voltage IGBT module based on instantaneous power loss.
Background
The IGBT module is a semiconductor module formed by bridging and packaging an insulated gate bipolar transistor and a freewheeling diode through a specific circuit, and the packaged IGBT module is directly applied to equipment such as a frequency converter, a UPS (uninterrupted power supply) and the like. The IGBT as a power switching element combines the advantages of a high current density, a low saturation voltage, and a high withstand voltage of the GTR, and the advantages of a MOSFET with a high input impedance, a high switching frequency, a unipolar voltage drive, and a low drive power. The IGBT gains a bigger and bigger market with high reliability and convenient use, is particularly suitable for a frequency converter of a driving motor and various inverter power supplies, and is an ideal power electronic device for variable frequency speed regulation, metallurgical machinery, electric traction and servo driving.
Because the high-power IGBT module usually works under the condition of high voltage and large current, the IGBT module can have the problem of short circuit damage in the running process of a system, and the application of the IGBT module is seriously influenced. Therefore, IGBT module short circuit detection and protection are one of the key technologies. At present, an instantaneous power loss early warning function is not designed in an IGBT driving board, and IGBT short-circuit protection generally comprises the following steps:
(1) VCE desaturation detection is used, and then a proper soft turn-off circuit is matched for protection. When the VCE desaturation detection is used, a long time (1-8 mu s) is needed for detecting a dead zone and a high collector-emitter voltage detection threshold. However, when the IGBT module is short-circuited, the collector current rises rapidly, and the IGBT module always operates in the linear region, so that the long dead zone time for short-circuit detection is not only unfavorable for limiting the short-circuit current and power consumption of the IGBT module, but also may cause the IGBT module to be short-circuited for more than 10 μ s of safe operation time, and thus the IGBT module is damaged.
(2) When the current sensor is used for detecting the current of the collector electrode or the current of a bus of the IGBT module, the performance of the Hall sensor can be influenced by the material for manufacturing the Hall sensor, so that the Hall sensor generates a magnetic resistance effect, temperature drift, unequal potential and the like. The frame of the Rogowski coil deforms due to temperature, large measurement errors are generated due to non-uniform winding of the coil, and an external magnetic field interferes with output signals.
(3) The di/dt detection method realizes dynamic monitoring, has no blind zone, and the corresponding protection circuit has low cost and is easy to integrate, but in the high-power IGBT module, the value of the parasitic inductance LeE is small and is difficult to determine.
Disclosure of Invention
The invention aims to provide a method for protecting a short circuit of a medium-high voltage IGBT module based on instantaneous power loss, and solves the problems that the short circuit detection of the IGBT module has a detection blind area and high power loss in the existing method.
The invention adopts the technical scheme that a method for protecting the short circuit of a medium-high voltage IGBT module based on instantaneous power loss comprises the following steps:
step 1, collecting instantaneous collector current ic (t) of an IGBT module;
step 2, collecting instantaneous collector-emitter voltage Uce (t) of the IGBT module;
step 3, multiplying the collected collector current and collector-emitter voltage to obtain the instantaneous power loss P (t) of the IGBT module,
P(t)＝Uce(t)×Ic(t)；
step 4, comparing the instantaneous power loss P (t) with the highest instantaneous power loss P of the IGBT module capable of working normallymaxMaking a comparison when P (t)>2PmaxAnd in time, short-circuit protection is carried out on the IGBT module.
The present invention is also technically characterized in that,
the IGBT module comprises two bridged insulated gate bipolar transistors and a shunt, wherein the shunt and the insulated gate bipolar transistors are mutually connected in series.
The specific method of the step 1 is that a voltage sampling circuit is used for collecting the voltage U at two ends of the instantaneous shunt of the IGBT moduleV1+V1-Then collector current ic (t) is:
Figure BDA0002197557160000031
wherein R is the resistance value of the shunt.
In step 2, the instantaneous collector-emitter voltage Uce (t) of the IGBT module is collected through a differential probe.
Maximum instantaneous power loss P of IGBT module capable of working normallymaxComprises the following steps:
Figure BDA0002197557160000032
Figure BDA0002197557160000033
Figure BDA0002197557160000034
in the formula, t1The time point t when the collector current in the IGBT module rises to 10% Ie2When the collector-emitter voltage in the IGBT module is reduced to 5% Ue, Ie is the rated working current of the IGBT module, Ue is the rated working voltage of the IGBT module, and E is1Operating for IGBT module to t1Energy loss in time, E2Operating for IGBT module to t2The energy loss in time.
The method has the advantages that the instantaneous power loss P is calculated by collecting the collector current Ic and the collector-emitter voltage Uce, and then the instantaneous power loss P (t) and the highest instantaneous power loss P with which the IGBT module can normally work are comparedmaxCompared with the prior art, the short-circuit protection is carried out on the IGBT module, the blind area detection of the desaturation short-circuit protection is overcome, the power protection is relatively obvious to the over-current protection, the threshold value is more obvious, the protection can be carried out in advance, the service life of the IGBT is well protected, and the power loss is lower; in addition, the values of the collector current Ic and the collector-emitter voltage Uce are easy to determine, the two short circuits can be quickly protected, the test error is small, the external interference is small, and the precision of the measurement result is high.
Drawings
Fig. 1 is a schematic circuit diagram of a driver according to an embodiment of the present invention;
FIG. 2 is a schematic circuit topology diagram of an IGBT module in the method for protecting the short circuit of the high-voltage IGBT module based on the instantaneous power loss according to the invention;
FIG. 3 is a graph of the trend of the instantaneous collector current of an IGBT module over time in the practice of the present invention;
FIG. 4 is a graph of the trend of the instantaneous collector-emitter voltage of an IGBT module over time in the practice of the present invention;
FIG. 5 is a power loss trend graph for an IGBT module in the practice of the invention;
fig. 6 is a graph of the energy loss trend of an IGBT module in the practice of the invention.
In the figure, 1, an IGBT module, 2, a comparator, 3, a multiplier, 4, a main control unit FPGA, 5, a driving structure, 6, a control signal, 7, a fiber isolator, 8, a short pulse suppression circuit, 9, a driving and protection suppression circuit, 10, a Uce voltage acquisition circuit, 11, an Ic current acquisition circuit, 12, an insulated gate bipolar transistor, 13, a current divider, 14, a desaturation protection circuit, 15, a di/dt protection circuit, 16, a Uce overvoltage protector and 17, a Uge overvoltage protector.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention relates to a method for protecting a short circuit of a medium-high voltage IGBT module based on instantaneous power loss, which specifically comprises the following steps:
step 1, collecting instantaneous collector current ic (t) of an IGBT module 1;
the specific method is that a voltmeter is used for collecting the voltage U at two ends of the current divider 13 when the IGBT module 1 worksV1+V1-，
Figure BDA0002197557160000051
Wherein R is the resistance value of the shunt 13;
step 2, collecting instantaneous collector-emitter voltage Uce (t) of the IGBT module 1 through a differential probe;
step 3, multiplying the collected collector current and collector-emitter voltage to obtain the instantaneous power loss P (t) of the IGBT module 1,
P(t)＝Uce(t)×Ic(t)；
step 4, comparing the instantaneous power loss P (t) with the highest instantaneous power loss P of the IGBT module 1 capable of working normallymaxMaking a comparison when P (t)>2PmaxIn this case, short-circuit protection is performed on the IGBT module 1.
Maximum instantaneous power loss P of IGBT module 1 capable of working normallymaxComprises the following steps:
Figure BDA0002197557160000052
Figure BDA0002197557160000053
Figure BDA0002197557160000054
in the formula, t1Is the time at which the collector current starts to rise in the IGBT module 1, t2At the moment when the collector-emitter voltage in the IGBT module 1 drops to 5% Ue, Ue is the rated operating voltage of the IGBT module 1.
Examples
Taking an IGBT module for a driver as an example, referring to fig. 1 and 2, the driver includes a main control unit FPGA4, and a control signal 6 is transmitted to an input end of the main control unit FPGA4 through a fiber isolator 7; the main control unit FPGA4 is respectively and electrically connected with a short pulse suppression circuit 8 and a drive and protection suppression circuit 9 in a bidirectional way; the output end of the main control unit FPGA4 is connected with the input end of the IGBT module 1 through a driving structure 5; the IGBT module 1 comprises two bridged IGBT's 12 and a shunt 13, the shunt 13 being connected in series with the IGBT's 12.
The current divider 13 is connected with a current acquisition circuit 11 and a voltage acquisition circuit 10, the current acquisition circuit 11 is used for acquiring a real-time current value of the current divider, the voltage acquisition circuit 10 is used for acquiring real-time voltage values at two ends of the current divider, an output end of the voltage acquisition circuit 10 and an output end of the current acquisition circuit 11 are respectively connected with an input end of the multiplier 3, and the multiplier 3 calculates a product of the current value and the voltage value of the current divider, namely instantaneous power loss P (t) of the IGBT module 1; the output end of the multiplier 3 is connected with a power comparator 2, the input end of the main control unit FPGA4 is provided with a CAP capture interface, and the CAP capture interface is in communication connection with the output end of the power comparator 2.
The output end of the IGBT module 1 is respectively connected with a desaturation protection circuit 14, a di/dt protection circuit 15, a Uce overvoltage protector 16 and a Vge overvoltage protector 17.
The power comparator 2 can compare the instantaneous power loss P (t) with the highest instantaneous power loss P of the IGBT module 1 which can normally workmaxPerforming comparison when the main control unitUnit FPGA receives P (t)>2PmaxWhen the information is received, the main control unit FPGA carries out short-circuit protection on the IGBT module through the driving structure 5.
Maximum instantaneous power loss P of IGBT module 1 capable of working normallymaxComprises the following steps:
Figure BDA0002197557160000061
Figure BDA0002197557160000062
Figure BDA0002197557160000063
in the formula, t1Is the time when the collector current starts to rise in the IGBT module 1, i.e. the time when the instantaneous collector current in the IGBT module is 10% Ie, t2At the moment when the instantaneous collector-emitter voltage in the IGBT module 1 is reduced to 5% Ue, Ie is the rated working current of the IGBT module, and Ue is the rated working voltage of the IGBT module 1; e1Operating for IGBT module to t1Energy loss in time, E2Operating for IGBT module to t2The energy loss in time.
In the process of using the IGBT module, the temporal change law of the instantaneous collector current ic (t) is shown in fig. 3, the temporal change law of the instantaneous collector-emitter voltage uce (t) is shown in fig. 4, the temporal change law of the instantaneous power loss P is shown in fig. 5, and the temporal change law of the energy loss E is shown in fig. 6. As can be seen from fig. 3-6, when the IGBT module is not turned on, the collector-emitter voltage Uce is at a high level, Ic is at a low level, and both the power loss P and the energy loss E are almost zero; when the IGBT module is switched on, the collector current Ic starts to rise after reaching 10% Ie, namely t1At the same time, the collector-emitter voltage Uce starts to fall; when the collector-emitter voltage Uce drops to 5% Ue, i.e. t2When the IGBT is normally switched on, the normal switching-on of the IGBT is completed; in the normal turn-on of IGBT moduleThen, the collector-emitter voltage Uce is almost zero, the collector current Ic is high, the power loss P is almost zero, and the energy loss E tends to be flat.

Claims (5)

1. A method for protecting a short circuit of a high-voltage IGBT module based on instantaneous power loss is characterized by comprising the following steps:
step 1, collecting instantaneous collector current ic (t) of an IGBT module (1);
step 2, collecting the instantaneous collector-emitter voltage Uce (t) of the IGBT module (1);
step 3, multiplying the collected instantaneous collector current ic (t) and the instantaneous collector-emitter voltage Uce (t) to obtain the instantaneous power loss P (t) of the IGBT module (1),
P(t)＝Uce(t)×Ic(t)；
wherein t represents time;
step 4, comparing the instantaneous power loss P (t) with the highest instantaneous power loss P of the IGBT module (1) which can normally workmaxMaking a comparison when P (t)>2PmaxAnd in the meantime, short-circuit protection is carried out on the IGBT module (1).
2. The method for short-circuiting a high-voltage IGBT module in transient power loss based protection according to claim 1, characterized in that said IGBT module (1) comprises two bridged IGBT (12) and a shunt (13), the shunt (13) and the IGBT (12) being connected in series.
3. The method for protecting the short circuit of the high-voltage IGBT module based on the instantaneous power loss as claimed in claim 2, characterized in that the specific method of step 1 is to use a voltage sampling circuit to collect the voltage U at two ends of the current divider (13) when the IGBT module (1) worksV1+V1-Then collector current ic (t) is:
Figure FDA0003023669260000011
wherein R is the resistance value of the shunt (13).
4. The method for short-circuiting a high-voltage IGBT module in instantaneous power loss protection according to claim 1, characterized in that in step 2, the instantaneous collector-emitter voltage Uce (t) of the IGBT module (1) is collected by a differential probe.
5. Method for short-circuiting high-voltage IGBT module in protection based on instantaneous power loss according to claim 1, characterized by the fact that the highest instantaneous power loss P for the normal operation of the IGBT module (1)maxComprises the following steps:
Figure FDA0003023669260000021
Figure FDA0003023669260000022
Figure FDA0003023669260000023
in the formula, t1Is the time when the collector current in the IGBT module (1) rises to 10% Ie, t2At the moment when the collector-emitter voltage in the IGBT module (1) is reduced to 5% Ue, Ie is the rated working current of the IGBT module, Ue is the rated working voltage of the IGBT module (1), and E is1Operating for IGBT module to t1Energy loss in time, E2Operating for IGBT module to t2The energy loss in time.
CN201910853379.3A 2019-09-10 2019-09-10 Method for protecting short circuit of medium-high voltage IGBT module based on instantaneous power loss Active CN110707665B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910853379.3A CN110707665B (en) 2019-09-10 2019-09-10 Method for protecting short circuit of medium-high voltage IGBT module based on instantaneous power loss

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910853379.3A CN110707665B (en) 2019-09-10 2019-09-10 Method for protecting short circuit of medium-high voltage IGBT module based on instantaneous power loss

Publications (2)

Publication Number Publication Date
CN110707665A CN110707665A (en) 2020-01-17
CN110707665B true CN110707665B (en) 2021-06-22

Family

ID=69194593

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910853379.3A Active CN110707665B (en) 2019-09-10 2019-09-10 Method for protecting short circuit of medium-high voltage IGBT module based on instantaneous power loss

Country Status (1)

Country Link
CN (1) CN110707665B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113497440A (en) * 2020-03-19 2021-10-12 广州汽车集团股份有限公司 IGBT drive circuit and motor controller

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102263544A (en) * 2011-07-15 2011-11-30 武汉理工大学 IGBT driving circuit with electrification protection
CN202160154U (en) * 2011-07-15 2012-03-07 武汉理工大学 Insulated gate bipolar transistor (IGBT) driving circuit with energizing protection
CN102983844A (en) * 2012-12-15 2013-03-20 合肥同智机电控制技术股份有限公司 Protection device for high-voltage power switch
EP2899886A1 (en) * 2014-01-22 2015-07-29 Hitachi, Ltd. Semiconductor drive device and power conversion device using the same
CN104917164A (en) * 2014-03-11 2015-09-16 北京动力源科技股份有限公司 Driving protection circuit
CN105098730A (en) * 2014-04-18 2015-11-25 南京南瑞继保电气有限公司 Device and method for detecting overcurrent of IGBT (insulated gate bipolar transistor)
CN105337513A (en) * 2014-08-07 2016-02-17 力林科技股份有限公司 power conversion device and over-power protection method thereof
CN106160438A (en) * 2015-05-13 2016-11-23 英飞凌科技奥地利有限公司 The Method and circuits of punching is crossed for reducing the collector emitter voltage in igbt
CN107612294A (en) * 2017-09-30 2018-01-19 上海瑞衡机电有限公司 Drive Protecting Circuit and aero-ground power device
CN109995350A (en) * 2019-03-20 2019-07-09 上海交通大学 A kind of driving stage short-circuit protection of power field effect pipe and guard method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7087373B2 (en) * 2017-12-20 2022-06-21 富士電機株式会社 Current detection circuit and current detection method for semiconductor devices
CN109450269B (en) * 2018-12-13 2020-07-28 北京金风科创风电设备有限公司 Junction temperature detection method and device for power module of wind power converter and storage medium

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102263544A (en) * 2011-07-15 2011-11-30 武汉理工大学 IGBT driving circuit with electrification protection
CN202160154U (en) * 2011-07-15 2012-03-07 武汉理工大学 Insulated gate bipolar transistor (IGBT) driving circuit with energizing protection
CN102983844A (en) * 2012-12-15 2013-03-20 合肥同智机电控制技术股份有限公司 Protection device for high-voltage power switch
EP2899886A1 (en) * 2014-01-22 2015-07-29 Hitachi, Ltd. Semiconductor drive device and power conversion device using the same
CN104917164A (en) * 2014-03-11 2015-09-16 北京动力源科技股份有限公司 Driving protection circuit
CN105098730A (en) * 2014-04-18 2015-11-25 南京南瑞继保电气有限公司 Device and method for detecting overcurrent of IGBT (insulated gate bipolar transistor)
CN105337513A (en) * 2014-08-07 2016-02-17 力林科技股份有限公司 power conversion device and over-power protection method thereof
CN106160438A (en) * 2015-05-13 2016-11-23 英飞凌科技奥地利有限公司 The Method and circuits of punching is crossed for reducing the collector emitter voltage in igbt
CN107612294A (en) * 2017-09-30 2018-01-19 上海瑞衡机电有限公司 Drive Protecting Circuit and aero-ground power device
CN109995350A (en) * 2019-03-20 2019-07-09 上海交通大学 A kind of driving stage short-circuit protection of power field effect pipe and guard method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
关于IGBT模块损耗的研究;王烨等;《仪器仪表与分析监测》;20110331(第3期);全文 *

Also Published As

Publication number Publication date
CN110707665A (en) 2020-01-17

Similar Documents

Publication Publication Date Title
CN101344572B (en) Chopped wave test circuit and method for semiconductor power device
CN111371293B (en) IGBT driving circuit with state monitoring and fault recording functions
CN111781482B (en) Method and device for detecting health state of bonding wire of high-power SIC MOSFET module
CN109510176B (en) Intelligent power module driving protection circuit
CN106556791A (en) A kind of high-power IGBT dynamic test circuit and its control method
CN102457163A (en) Driving circuit and semiconductor device with the driving circuit
EP3641113B1 (en) Control device and semiconductor apparatus
CN110492439B (en) Protection circuit suitable for high-power SiCMOS field effect transistor
JP2015032984A (en) Device for driving semiconductor element, and power conversion device using the same
CN111884536A (en) Intelligent power module
CN112865767B (en) Circuit for improving response speed of short circuit fault of SiC MOSFET device
CN110572011B (en) IGBT drive circuit soft switching device with short-circuit protection
CN110707665B (en) Method for protecting short circuit of medium-high voltage IGBT module based on instantaneous power loss
CN115078942B (en) On-line monitoring method for IGBT of converter by utilizing self-excitation short circuit
CN110611298A (en) IPM protection system for flywheel energy storage device
CN112366658A (en) IGBT over-current and over-voltage protection circuit and IGBT over-current and over-voltage protection method
CN117092549A (en) Power module short circuit detection device and detection method
US20110234127A1 (en) Current limiting device for vehicle
CN109212433B (en) Inverter IGBT fault early warning and protection circuit
CN115201649B (en) Driving circuit for realizing IGBT state monitoring by spontaneous short-circuit current
CN113595536A (en) IGBT active overcurrent protection device and protection method
CN114660433A (en) Silicon carbide MOSFET short circuit and overcurrent combined detection method and system
CN111969561A (en) SiC MOSFET IPM rapid short-circuit protection circuit
CN112255522A (en) Bipolar transistor short circuit detection device and method
CN220525956U (en) Solid state circuit breaker fault detection device and solid state circuit breaker comprising same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant