CN110688899B - Fingerprint identification device - Google Patents
Fingerprint identification device Download PDFInfo
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- CN110688899B CN110688899B CN201910789892.0A CN201910789892A CN110688899B CN 110688899 B CN110688899 B CN 110688899B CN 201910789892 A CN201910789892 A CN 201910789892A CN 110688899 B CN110688899 B CN 110688899B
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- thin film
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- 239000010409 thin film Substances 0.000 claims abstract description 100
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 239000010408 film Substances 0.000 claims description 37
- 230000001681 protective effect Effects 0.000 claims description 22
- 239000011521 glass Substances 0.000 claims description 11
- 239000004973 liquid crystal related substance Substances 0.000 claims description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 25
- 230000003287 optical effect Effects 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- -1 IZO) Chemical compound 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- LFKMKZZIPDISEK-UHFFFAOYSA-L magnesium;4-carboxy-2,6-dihydroxyphenolate Chemical compound [Mg+2].OC1=CC(C([O-])=O)=CC(O)=C1O.OC1=CC(C([O-])=O)=CC(O)=C1O LFKMKZZIPDISEK-UHFFFAOYSA-L 0.000 description 2
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000484 niobium oxide Inorganic materials 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 238000012905 input function Methods 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Geometry (AREA)
- Human Computer Interaction (AREA)
- Multimedia (AREA)
- Theoretical Computer Science (AREA)
- Image Input (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
Abstract
The invention relates to a fingerprint identification device, which comprises a thin film transistor substrate with a first side and a second side, a plurality of fingerprint thin film transistor switches, a plurality of sensing electrodes, a plurality of signal lines and a plurality of data lines, wherein the fingerprint thin film transistor switches are arranged on the first side; cost reduction can be achieved by this design.
Description
Technical Field
The present invention relates to a fingerprint identification apparatus, and more particularly, to a fingerprint identification apparatus capable of reducing cost.
Background
The fingerprint identification module is one of the standard equipments of the electronic device, and the user can identify the identity through the fingerprint identification module to unlock the electronic device or can be used for the operation of the application program.
In order to make the user use the electronic device more conveniently, simplifying the input operation on the electronic device has become a trend, so the touch input module gradually replaces the keyboard input module. In some electronic devices, for example: the smart phone (smart phone) has the touch input function, and the display module completely replaces the key input. Under the design without keys, the electronic device generally sets the fingerprint identification module below the display module, so that a user can place a finger at the display area of the display module to identify the fingerprint.
In the prior art, as in U.S. patent publication No. 2018239941A1, it relates to a semiconductor fingerprint sensor (i.e., an optical fingerprint sensor) mounted below a display. In its specification, a display-under optical fingerprint sensor arrangement for mitigating moire effects is presented, the electronic device comprising: a display, such as an OLED display, comprising rows of picture element elements parallel to a first main direction along a first axis; and an optical sensor mounted below the display to receive light reflected from a user's finger fingerprint through the optical sensor to sense fingerprint imaging.
However, another problem is that the optical fingerprint sensor is mounted below the display panel, so that the optical fingerprint sensor must pass through the light generated by the light emitting diode RGB in the OLED display above, and after the optical fingerprint sensor is projected onto the finger fingerprint above and touches the upper surface of the OLED display, the optical fingerprint sensor needs to wait for reflection from the finger fingerprint, and then the fingerprint imaging can be sensed by the optical fingerprint sensor, so that the whole light source path in the process of obtaining the fingerprint imaging is long and complicated, and further the light source is easily interfered by other internal or external factors (such as the interference of the internal structure of the OLED display or the interference of external light), and the finger of the user directly touches the OLED display panel instead of directly touching the optical fingerprint sensor, so that the identification accuracy is poor and the identification time is increased. In addition, the optical fingerprint sensor is additionally assembled and combined under the OLED display, the manufacturing convenience is poor and the overall structure is rather complicated.
Disclosure of Invention
An object of the present invention is to provide a fingerprint identification apparatus capable of reducing cost.
Another object of the present invention is to provide a fingerprint identification apparatus capable of achieving interference reduction.
Another object of the present invention is to provide a display panel that can be integrally formed on a fingerprint identification device, so as to effectively achieve a fingerprint identification device with simple structure and good manufacturing convenience.
In order to achieve the above object, the present invention provides a fingerprint identification device, comprising a tft substrate, a plurality of tft switches, a plurality of sensing electrodes, a plurality of signal lines and a plurality of data lines, wherein the tft substrate has a first side and a second side, the plurality of tft switches are disposed on the first side, each tft switch has a gate terminal, a source terminal and a drain terminal, each of the two sensing electrodes corresponds to at least two tft switches, a first sensing electrode of each of the two sensing electrodes is electrically connected to the drain terminal of a first tft switch of the at least two tft switches, a second sensing electrode of each of the two sensing electrodes is electrically connected to a ground terminal, the drain terminal of a second tft switch of the at least two tft switches is electrically connected to the source terminal of the first tft switch, each signal line is electrically connected to the drain terminal of the at least two tft switches, and each of the signal lines is electrically connected to the drain terminal of the at least two tft switches; by the design of the fingerprint identification device, the cost is effectively reduced, the structure is simple, and the manufacturing convenience is good.
Further, the plurality of sensing electrodes are disposed above the plurality of fingerprint thin film transistor switches, the first sensing electrode of each two sensing electrodes is disposed above the at least two fingerprint thin film transistor switches and is provided with a first insulating film therebetween, the second sensing electrode of each two sensing electrodes is disposed above the first sensing electrode and is provided with a second insulating film therebetween, one side of a protective film is disposed adjacent to one side of the second sensing electrode of each two sensing electrodes, and the protective film is disposed above the second sensing electrode.
Further, the plurality of sensing electrodes and the plurality of fingerprint thin film transistor switches are correspondingly arranged on the first side of the thin film transistor substrate, each two sensing electrodes are respectively positioned on one side corresponding to the at least two fingerprint thin film transistor switches, and one side of a protective film is attached to one side corresponding to the plurality of fingerprint thin film transistors and the plurality of sensing electrodes.
Further, the plurality of sensing electrodes are disposed above the plurality of fingerprint thin film transistor switches, each two sensing electrodes are disposed above the at least two fingerprint thin film transistor switches and are provided with a first insulating film therebetween, each two sensing electrodes are disposed on the first insulating film corresponding to the at least two fingerprint thin film transistor switches, and one side of a protective film is attached to one side of each two sensing electrodes.
Further, a color filter substrate, a plurality of upper electrodes, a liquid crystal layer, a plurality of lower electrodes and a thin film transistor array substrate are sequentially laminated on the other side of the protective film to integrally form a display panel with fingerprint identification.
Further, a color filter substrate, a plurality of upper electrodes, a liquid crystal layer, a plurality of lower electrodes and a thin film transistor array substrate are sequentially laminated on the second side of the thin film transistor substrate to integrally form a display panel with fingerprint identification.
Further, a glass substrate, a plurality of second electrodes, an organic light-emitting layer, a plurality of first electrodes and a thin film transistor array substrate are sequentially laminated on the other side of the protective film, so as to integrally form a display panel with fingerprint identification.
Further, the second side of the thin film transistor substrate is sequentially laminated with a glass substrate, a plurality of second electrodes, an organic light-emitting layer, a plurality of first electrodes and a thin film transistor array substrate, so as to integrally form a display panel with fingerprint identification.
Further, the plurality of signal lines and the plurality of data lines are respectively electrically connected to a controller.
Further, the plurality of signal lines and the plurality of data lines are respectively and electrically connected with one side of at least one selector, and the other side of the at least one selector is electrically connected with a controller.
Further, the fingerprint thin film transistor switches are amorphous silicon thin film transistors or low temperature polysilicon thin film transistors.
Further, the thin film transistor substrate is a polymer thin film substrate, a glass substrate, a ceramic substrate or a metal substrate.
Drawings
Fig. 1 is an exploded view of a fingerprint identification apparatus according to a first embodiment of the present invention.
Fig. 2 is a schematic combination diagram of a fingerprint identification apparatus according to a first embodiment of the invention.
Fig. 3A is a schematic diagram illustrating a fingerprint identification apparatus according to an alternative embodiment of the present invention.
Fig. 3B is a schematic diagram illustrating a fingerprint recognition device according to another alternative embodiment of the present invention.
Fig. 4A is an equivalent circuit schematic diagram of a fingerprint identification apparatus according to a first embodiment of the present invention.
Fig. 4B is an equivalent circuit diagram of a fingerprint identification apparatus according to an embodiment of the invention.
Fig. 5A is a schematic diagram illustrating an implementation manner of finger touch on a fingerprint recognition device according to a first embodiment of the present invention.
Fig. 5B is a schematic diagram illustrating another embodiment of the finger touch of the user on the fingerprint recognition device according to the first embodiment of the present invention.
Fig. 5C is a schematic diagram illustrating the operation of touching the fingerprint recognition device with the finger of the user according to the first embodiment of the present invention.
Fig. 6A is a schematic combination diagram of an integrated fingerprint recognition device and a display panel according to a second embodiment of the present invention.
Fig. 6B is a schematic combination diagram of an integrated fingerprint recognition device and a display panel according to an alternative embodiment of the present invention.
Fig. 7A is a schematic diagram illustrating an integrated combination of a fingerprint recognition device and a display panel according to another alternative embodiment of the present invention.
Fig. 7B is a schematic diagram illustrating an integrated combination of a fingerprint recognition device and a display panel according to another alternative embodiment of the present invention.
Fig. 8 is a schematic diagram illustrating the operation of the fingerprint recognition device according to the second embodiment of the present invention when a user touches the display panel with his finger.
Description of the reference numerals
Fingerprint identification device … 2
Fingerprint identification sensing element … 20
Thin film transistor substrate … 21
First side … 211
Second side … 212
Fingerprint Thin Film Transistor (TFT) switch … 22
First fingerprint Thin Film Transistor (TFT) switch … 221
Second finger thin film transistor … and 222
Gate terminal … 223
Source terminal … 224,224
Drain terminal … 225
Sense electrode … 23
First sense electrode … 231
Second sensing electrode … 232
Signal line … 24
Data line … 25
First insulating film … 26
Second insulating film … 27
Protective film … 28
Ground terminal … 29
Display panel …, 4
Thin film transistor array substrate …, 41
Upper electrode … 32
Liquid crystal layer … 33
Lower electrode … 34
Color filter substrate … 35
First electrode … 42
Second electrode … 44
Organic light emitting layer … 43
… 45 glass substrates
Display area …, 37
Non-display area …, 48
Controller … 5
Selector … 51
Selector … 7
Electrostatic capacity … CS
Capacitor … C1
User … 8
Finger ….
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present invention is not limited to the specific embodiments disclosed below.
The above objects of the present invention, as well as the structural and functional characteristics thereof, will be described in terms of the preferred embodiments of the present invention as illustrated in the accompanying drawings.
The present invention provides a fingerprint identification apparatus, please refer to fig. 1 for an exploded schematic diagram of a fingerprint identification apparatus according to a first embodiment of the present invention; fig. 2 is a schematic combination diagram of a fingerprint identification apparatus according to a first embodiment of the present invention; FIG. 3A is a schematic diagram showing a fingerprint identification apparatus according to an alternative embodiment of the present invention; FIG. 3B is a schematic diagram showing a fingerprint identification apparatus according to another alternative embodiment of the present invention; fig. 4A is an equivalent circuit schematic diagram of a fingerprint identification apparatus according to a first embodiment of the present invention; FIG. 5A is a schematic diagram illustrating an embodiment of a finger touch of a user on a fingerprint recognition device according to a first embodiment of the present invention; fig. 5B is a schematic diagram illustrating another embodiment of the finger touch of the user on the fingerprint recognition device according to the first embodiment of the present invention. As shown in fig. 1, 2 and 4A, the fingerprint recognition device 2 may be applied to an electronic device (not shown) or a display device (not shown), and the electronic device may be a mobile phone, a notebook computer, an industrial computer, a server or any type of electronic device, or the display device may be a Liquid Crystal Display (LCD) or an Organic Light Emitting Diode (OLED) display, but the invention is not limited thereto.
The fingerprint recognition device 2 comprises a thin film transistor substrate 21, a plurality of fingerprint thin film transistor switches 22, a plurality of sensing electrodes 23, a plurality of signal lines 24 and a plurality of data lines 25, wherein the thin film transistor substrate 21 is shown as a glass substrate in the present embodiment, the thin film transistor substrate 21 is provided with a first side 211 and a second side 212, the plurality of fingerprint Thin Film Transistor (TFT) switches are an amorphous silicon (a-Si TFT) or a low temperature polysilicon thin film transistor (LTPS-TFT), the plurality of fingerprint thin film transistors are provided on the first side 211 of the thin film transistor substrate 21, and each fingerprint thin film transistor switch is provided with a gate terminal 223, a source terminal 224 and a drain terminal 225. In one embodiment, the thin film transistor substrate 21 is a polymer thin film substrate (e.g., a silicon thin film substrate), a ceramic substrate, or a metal substrate.
The plurality of sensing electrodes 23 are shown as a transparent sensing electrode in this embodiment, and the plurality of sensing electrodes 23 are formed of a transparent conductive material selected from one of the following groups, indium Tin Oxide (ITO), indium zinc oxide (indium zinc oxide, IZO), cadmium tin oxide (cadmium tin oxide, CTO), aluminum zinc oxide (aluminum zinc oxide, AZO), indium zinc tin oxide (indium tin zinc oxide, ITZO), zinc oxide (zinc oxide), cadmium oxide (cam ium oxide), hafnium oxide (hafnium oxide, hfO), indium gallium zinc oxide (indium gallium zinc oxide, inGaZnO), indium gallium zinc magnesium oxide (indium gallium zinc magnesium oxide, znmgo), indium gallium magnesium oxide (indium gallium magnesium oxide, inGaMgO) or indium gallium aluminum oxide (indium gallium aluminum oxide, inGaAlO)), conductive polymer, carbon nanotubes, and the like. The plurality of sensing electrodes 23 are disposed above the plurality of fingerprint thin film transistor switches 22, and each of the two sensing electrodes 23 corresponds to the at least two fingerprint thin film transistor switches 22, in this embodiment, two sensing electrodes 23 correspond to two fingerprint thin film transistor switches 22 to form a group of fingerprint identification sensing devices 20, as shown in fig. 5C, a plurality of groups of fingerprint identification sensing devices 20 are disposed on the first side 211 of the thin film transistor substrate 21. In implementation, two sensing electrodes corresponding to at least two (e.g., three or five) fingerprint identification sensing devices 20 may also be provided.
Each signal line 24 is electrically connected to the gate terminals 223 of the first and second fingerprint thin-film transistor switches 221 and 222 corresponding to the at least two transistor switches, each data line 25 is electrically connected to the source terminal 224 of the second fingerprint thin-film transistor switch 222 corresponding to the at least two fingerprint thin-film transistor switches 22, that is, as shown in fig. 4A, each signal line 24 of the present embodiment is electrically connected to the gate terminals 223 of the first and second fingerprint thin-film transistor switches 221 and 222 corresponding to each row of the plurality of fingerprint identification sensing devices 20 along the first direction (e.g., X direction), and each data line 25 is electrically connected to the source terminal 224 of the second fingerprint thin-film transistor switch 222 corresponding to each column of the plurality of fingerprint identification sensing devices 20 along the second direction (e.g., Y direction). The plurality of signal lines 24 and the plurality of data lines 25 are electrically connected to a controller 5, wherein the controller 5 is a Micro Controller Unit (MCU), a processor, a single chip or a Digital Signal Processor (DSP), and the controller 5 of the present embodiment is disposed on the first side 211 of the tft substrate 21, but not limited thereto, and in the embodiment, the controller 5 may be electrically connected to the plurality of signal lines 24 through a signal line 24 (such as a flexible signal flat cable) and the corresponding plurality of signal lines 24, or may be shared with the controller 5 on a display panel (not shown).
In one embodiment, referring to fig. 4B, the plurality of signal lines 24 and the plurality of data lines 25 are electrically connected to one side of at least one selector 51 (e.g., multiplexer, MUX; data selector), and the selector 51 in one embodiment is a 2-to-1 selector. But is not limited thereto, the selector in other embodiments may be selected as a 3-to-1 selector or a 4-to-1 selector, and so on; the other side of the selector 51 is electrically connected to the controller 5, and the circuits for connecting the plurality of signal lines 24 and the plurality of data lines 25 to the controller 5 through the selector 51 are greatly reduced, so that the controller 5 can be further provided with more pins for other control, and the controller 5 with a single specification or model can be further applied to the fingerprint identification devices 2 with different sizes, thereby achieving the effects of no need of replacement and cost saving. In another embodiment, the plurality of signal lines 24 are electrically connected to the controller 5, one side of the selector 51 is electrically connected to the plurality of data lines 25, and the other side of the selector 52 is electrically connected to the controller 5.
For convenience of description, the following description will be given with respect to a single set of fingerprint sensing devices 20:
a first sensing electrode 231 of each two sensing electrodes 23 is electrically connected to a drain terminal 225 of a first fingerprint thin film transistor switch 221 of the at least two fingerprint thin film transistor switches 22, a second sensing electrode 232 of each two sensing electrodes 23 is electrically connected to a ground terminal 29, the drain terminal 225 of a second fingerprint thin film transistor switch 222 of the at least two fingerprint thin film transistor switches 22 is electrically connected to the source terminal 224 of the first fingerprint thin film transistor switch 221, the first sensing electrode 231 of each two sensing electrodes 23 is located above the at least two fingerprint thin film transistor switches 22 as the X-direction sensing electrode, and a first insulating film 26 is disposed between the first sensing electrode 231 of each two sensing electrodes 23 and the corresponding two fingerprint thin film transistor switches 23, the second sensing electrode 232 of every two sensing electrodes 23 is located above the corresponding first sensing electrode 231, and the first sensing electrode 231 and the second sensing electrode 232 are provided with a second insulating film 27 therebetween, one side of a protective film 28 is attached to one side of the second sensing electrode 232 of every two sensing electrodes 23, and the protective film 28 is located above the second sensing electrode 232, and the materials of the first insulating film 26, the second insulating film 27 and the protective film 28 are silicon oxide (SiOx), titanium oxide (TiOx), niobium oxide (NbOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), aluminum oxide (AlOx), aluminum oxynitride (AlOxNy), magnesium difluoride (MgF 2) and tantalum oxide (TaOx)) or any suitable transparent organic material. In the implementation, a through hole (not shown) for electrical connection is formed at the first insulating film 26 and the positions corresponding to the first sensing electrode 231 and the two fingerprint thin film transistor switches 23, so that the first sensing electrode 231 is electrically connected to the corresponding two fingerprint thin film transistor switches 22 through the through hole, and another through hole (not shown) for electrical connection is formed at the positions corresponding to the first sensing electrode 231 and the second sensing electrode 232, so that the second sensing electrode 232 is electrically connected to the corresponding first sensing electrode 231 through the other through hole. In one embodiment, the protective film 28 may also be a glass material.
In addition, referring to fig. 5A, 5B, and 5C, with reference to fig. 4A; as shown, when the second side 212 of the thin film transistor substrate 21 is touched by a finger of a user 8, an electrostatic capacitance CS is present between the first sensing electrodes 231 corresponding to each two sensing electrodes 23, and a capacitance C1 is also formed between each two sensing electrodes 23. Therefore, when the fingerprint recognition device 2 does not recognize a fingerprint, the gate terminals 223 of the first fingerprint recognition transistor switch 221 and the second fingerprint recognition transistor switch 222 in the fingerprint recognition sensing device 20 receive a driving signal transmitted by the controller 5 through the corresponding signal lines 24 as a high voltage signal, and after the first fingerprint recognition transistor switch 221 and the second fingerprint recognition transistor switch 222 are turned on (or turned on), the capacitor C1 is charged to saturation by the data voltage of the data line 25, and when the driving signal is a low voltage signal, the first fingerprint recognition transistor switch 221 and the second fingerprint recognition transistor switch 222 are not turned on (or turned off), and at this time, the data line 25 is in a floating (floating) state. If a finger 81 of the user 8 touches the second side 212 (or the other side of the protective film 28) of the tft substrate 21 of the fingerprint recognition device 2 to perform fingerprint recognition, the driving signal is a high voltage signal to turn on the first and second fingerprint recognition switches 221 and 222, and then the data voltage of the data line 25 charges the capacitance CS and the capacitance C1 to saturation, when the driving signal is a low voltage signal, the first and second fingerprint recognition switches 221 and 222 are not turned on (or turned off), the data line 25 is in a floating state, and when the driving signal is a high voltage signal to turn on the first and second fingerprint recognition switches 221 and 222 again, the capacitance CS and the capacitance C1 are discharged, and at this time, the controller 5 can obtain a fingerprint image (such as a fingerprint image) through the data voltage variation on the corresponding data line 25. In an alternative embodiment, referring to fig. 3A and 5C, the sensing electrodes 23 and the fingerprint thin film transistor switches 22 are disposed on the first side 211 of the thin film transistor substrate 21, each two sensing electrodes 23 of each set of fingerprint identification sensing devices 20 are respectively located on one side of the at least two fingerprint thin film transistor switches 22 and parallel to each other, and one side of the protective film 28 is attached to one side of the at least two fingerprint thin film transistor switches 22 and one side of the at least two sensing electrodes 23.
In another alternative embodiment, referring to fig. 3B and 5C, each two sensing electrodes 23 of each set of fingerprint identification sensing devices 20 are located above the corresponding at least two fingerprint thin film transistor switches 22, the first insulating film 26 is disposed between each of the two sensing electrodes 23 and the corresponding at least two fingerprint thin film transistor switches 22, and the first sensing electrode 231 and the second sensing electrode 232 of each of the two sensing electrodes 23 are disposed in parallel on one side of the first insulating film 26 corresponding to the at least two fingerprint thin film transistor switches 22, and one side of the protective film 28 is attached to one side of the corresponding at least two sensing electrodes 23.
Therefore, by the design of the fingerprint identification apparatus 2, the cost reduction, the simple structure and the good manufacturing convenience can be effectively achieved.
Fig. 6A is a schematic diagram illustrating an integrated combination of a fingerprint recognition device and a display panel according to a second embodiment of the present invention; FIG. 6B is a schematic diagram illustrating an integrated combination of a fingerprint recognition device and a display panel according to an alternative embodiment of the present invention; FIG. 7A is a schematic diagram illustrating an integrated combination of a fingerprint recognition device and a display panel according to another alternative embodiment of the present invention; FIG. 7B is a schematic diagram illustrating an integrated combination of a fingerprint recognition device and a display panel according to another alternative embodiment of the present invention; fig. 8 is a schematic diagram illustrating the operation of the fingerprint recognition device according to the second embodiment of the present invention, wherein the fingerprint recognition device is touched by a finger of a user on the display panel, with reference to fig. 1 and 4A. The fingerprint recognition device 2 of the first embodiment is mainly applied to a display panel 3, and the fingerprint recognition device 3 is manufactured in an integrated manner, that is, a color filter substrate 35 (Color Filter Substrate), a plurality of upper electrodes 32 (such as ITO), a liquid crystal layer 33 (Liquid Crystal Layer), a plurality of lower electrodes 34 (such as ITO) and a thin film transistor array substrate 31 (TFT Array Substrate) are sequentially stacked on the other side of the protective film 28 of the fingerprint recognition device 2, so as to integrally form the fingerprint recognition display panel 3 (such as a liquid crystal display panel; LCD panel), and the fingerprint recognition device 2 of the first embodiment is disposed in a display area 37 of the display panel 3, and a plurality of signal lines 24, a plurality of data lines 25 and a controller 5 are disposed in a non-display area 38 of the display panel 3, so that a finger 81 of a user 8 can directly touch a second side 212 of the thin film transistor substrate 21 on the display area 37 corresponding to the display panel 3 to perform fingerprint recognition. And in particular, the area of the fingerprint recognition device 1 may be equal to or smaller than the area of the display panel 3.
In an alternative embodiment, referring to fig. 6B, the color filter substrate 35, the plurality of upper electrodes 32, the liquid crystal layer 33, the plurality of lower electrodes 34 and the thin film transistor array substrate 31 are sequentially stacked on the second side 212 of the fingerprint recognition device 2 to integrally form the display panel 3 (e.g. a liquid crystal display panel) with fingerprint recognition, so that the user 8 can directly touch the other side of the protective film 28 on the display area 37 corresponding to the display panel 3 to perform fingerprint recognition.
In another alternative embodiment, referring to fig. 7A, a glass substrate 45, a plurality of second electrodes 44 (e.g. ITO), an organic light emitting layer 43, a plurality of first electrodes 42 (e.g. ITO) and a thin film transistor array substrate 41 (TFT Array Substrate) are sequentially stacked on the other side of the protective film 28 to integrally form a display panel 4 (e.g. organic light emitting display panel; OLED panel) with fingerprint recognition, so that a finger 81 of a user 8 can directly touch the second side 212 of the thin film transistor substrate 21 on the display area 47 corresponding to the display panel 4 for fingerprint recognition, and a plurality of signal lines 24, a plurality of data lines 25 and a controller 5 are disposed on the non-display area 48 of the display panel 4, and the first electrode 42 in this other embodiment is an anode electrode and is an opaque indium-tin-oxide (ITO) electrode, and the second electrode 44 is a cathode electrode and is a transparent or semitransparent electrode (e.g. ITO).
In another alternative embodiment, referring to fig. 7B, the glass substrate 45, the plurality of second electrodes 44 (e.g. ITO), the organic light emitting layer 43, the plurality of first electrodes 42 (e.g. ITO) and the thin film transistor array substrate 41 are sequentially stacked on the second side 212 of the thin film transistor substrate 21 to integrally form a display panel 4 (e.g. OLED panel) with fingerprint recognition, so that the user 8 can directly touch the other side of the protective film 28 on the display area 47 corresponding to the display panel 4 for fingerprint recognition.
Therefore, by the design of the integrated combination of the fingerprint identification device 2 and the display panels 3 and 4, the finger 81 of the user 8 directly touches the fingerprint identification device 2 to perform fingerprint identification, so as to effectively improve fingerprint identification accuracy, identification speed and reduce interference, and further effectively achieve good manufacturing convenience, simple structure and cost reduction.
It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Claims (9)
1. A fingerprint identification device, comprising:
a thin film transistor substrate having a first side and a second side;
a plurality of fingerprint thin film transistor switches arranged on the first side, each fingerprint thin film transistor switch having a gate terminal, a source terminal and a drain terminal;
the sensing electrodes are respectively corresponding to at least two fingerprint thin film transistor switches, a first sensing electrode in each sensing electrode is electrically connected with the drain end of a first fingerprint thin film transistor switch in the at least two fingerprint thin film transistor switches, a second sensing electrode in each sensing electrode is electrically connected with a grounding end, and the drain end of a second fingerprint thin film transistor switch in the at least two fingerprint thin film transistor switches is electrically connected with the source end of the first fingerprint thin film transistor switch; the plurality of sensing electrodes are arranged above the plurality of fingerprint thin film transistor switches, the first sensing electrode of each two sensing electrodes is arranged above the fingerprint thin film transistor switches, a first insulating film is arranged between the first sensing electrode and the second sensing electrode of each two sensing electrodes, a second insulating film is arranged between the second sensing electrode and the first sensing electrode, one side of a protective film is attached to one side of the second sensing electrode of each two sensing electrodes, and the protective film is arranged above the second sensing electrode;
a plurality of signal lines, each of which is electrically connected with the gate terminals of the first fingerprint thin film transistor switch and the second fingerprint thin film transistor switch corresponding to the at least two fingerprint thin film transistor switches; and
And a plurality of data lines, each of the data lines being electrically connected to the source terminal of the second fingerprint thin film transistor switch of the at least two fingerprint thin film transistor switches.
2. The fingerprint identification apparatus of claim 1, wherein a color filter substrate, a plurality of upper electrodes, a liquid crystal layer, a plurality of lower electrodes and a thin film transistor array substrate are sequentially laminated on the other side of the protective film to integrally form a display panel with fingerprint identification.
3. The fingerprint recognition device according to claim 1, wherein a color filter substrate, a plurality of upper electrodes, a liquid crystal layer, a plurality of lower electrodes and a thin film transistor array substrate are sequentially laminated on the second side of the thin film transistor substrate to integrally form a display panel with fingerprint recognition.
4. The fingerprint identification apparatus of claim 1, wherein a glass substrate, a plurality of second electrodes, an organic light emitting layer, a plurality of first electrodes and a thin film transistor array substrate are sequentially laminated on the other side of the protective film to integrally form a display panel with fingerprint identification.
5. The fingerprint recognition device according to claim 1, wherein the glass substrate, the plurality of second electrodes, the organic light emitting layer, the plurality of first electrodes and a thin film transistor array substrate are sequentially stacked on the second side of the thin film transistor substrate to integrally form a display panel with fingerprint recognition.
6. The fingerprint identification device according to claim 1, wherein the plurality of signal lines and the plurality of data lines are electrically connected to a controller, respectively.
7. The fingerprint identification device of claim 1, wherein the plurality of signal lines and the plurality of data lines are electrically connected to one side of at least one selector, respectively, and the other side of the at least one selector is electrically connected to a controller.
8. The fingerprint identification device of claim 1, wherein the plurality of fingerprint thin film transistor switches are an amorphous silicon thin film transistor or a low temperature polysilicon thin film transistor.
9. The fingerprint recognition device according to claim 1, wherein the thin film transistor substrate is a polymer thin film substrate, a glass substrate, a ceramic substrate or a metal substrate.
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| CN104106030A (en) * | 2011-12-22 | 2014-10-15 | 纳米技术方案公司 | Switched-electrode capacitive-measurement device for touch-sensitive and contactless interfaces |
| TWI603244B (en) * | 2016-09-21 | 2017-10-21 | 關鍵禾芯科技股份有限公司 | Liquid crystal device with fingerprint identification function |
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| JP6171997B2 (en) * | 2014-03-14 | 2017-08-02 | ソニー株式会社 | Solid-state imaging device, driving method thereof, and electronic apparatus |
| US9436845B2 (en) * | 2014-03-25 | 2016-09-06 | Globalfoundries Inc. | Physically unclonable fuse using a NOR type memory array |
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| CN104106030A (en) * | 2011-12-22 | 2014-10-15 | 纳米技术方案公司 | Switched-electrode capacitive-measurement device for touch-sensitive and contactless interfaces |
| TWI603244B (en) * | 2016-09-21 | 2017-10-21 | 關鍵禾芯科技股份有限公司 | Liquid crystal device with fingerprint identification function |
| CN108987605A (en) * | 2017-06-02 | 2018-12-11 | 三星显示有限公司 | Show equipment |
| CN209044568U (en) * | 2017-12-30 | 2019-06-28 | 深圳信炜科技有限公司 | Photosensitive driving circuit, photosensitive device and electronic equipment |
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