CN110658683A - Wafer carrier system and immersion lithographic apparatus - Google Patents
Wafer carrier system and immersion lithographic apparatus Download PDFInfo
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- CN110658683A CN110658683A CN201810690347.1A CN201810690347A CN110658683A CN 110658683 A CN110658683 A CN 110658683A CN 201810690347 A CN201810690347 A CN 201810690347A CN 110658683 A CN110658683 A CN 110658683A
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- 238000007654 immersion Methods 0.000 title claims abstract description 45
- 239000007788 liquid Substances 0.000 claims abstract description 252
- 238000005286 illumination Methods 0.000 claims abstract description 6
- 238000011084 recovery Methods 0.000 claims description 17
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 3
- 238000000671 immersion lithography Methods 0.000 abstract description 13
- 230000001133 acceleration Effects 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 8
- 238000001259 photo etching Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 238000001704 evaporation Methods 0.000 description 10
- 230000008020 evaporation Effects 0.000 description 10
- 238000005057 refrigeration Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 238000003911 water pollution Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000003915 air pollution Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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- 239000000758 substrate Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
- G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention provides a wafer bearing system and immersion lithography equipment, wherein the wafer bearing system comprises a workpiece table, a plurality of liquid flow path cavities are arranged in the workpiece table, the liquid flow path cavities are distributed in a mode of being centrosymmetric about a horizontal plane central point of the workpiece table, and temperature control liquids in opposite directions flow through two adjacent liquid flow path cavities. The immersion lithographic apparatus comprises a main frame, an illumination system, a projection objective, an immersion head. The invention can solve the defect of temperature fluctuation of liquid in the workbench caused by the slippage of immersion liquid due to the acceleration and deceleration movement of the workbench in the exposure process, and has the effect of improving the exposure performance of the photoetching equipment.
Description
Technical Field
The invention relates to the technical field of photoetching, in particular to a wafer bearing system and immersion photoetching equipment.
Background
Modern lithographic apparatus are based on optical lithography, which uses optical systems to project and expose patterns on a reticle precisely onto a photoresist-coated substrate (e.g., a silicon wafer). Immersion lithography refers to filling water or a higher refractive immersion liquid between an exposure lens and a silicon wafer to replace the corresponding air in the conventional dry lithography technique. Since the refractive index of water is larger than that of air, the numerical aperture of the lens group is increased, and further smaller characteristic line width can be obtained. Referring to fig. 1, a conventional immersion lithography machine includes a main frame 1 supporting an illumination system 2, a projection objective 4 and a stage 8, and a silicon wafer 7 coated with photosensitive resist is placed on the stage 8. In the immersion lithography machine, an immersion liquid (water) is filled between a projection objective 4 and a silicon wafer 7 by an immersion liquid limiting mechanism 6. Wherein the immersion liquid confinement mechanism is also referred to as an immersion head. During working, the workpiece table 8 drives the silicon wafer 7 to perform high-speed scanning and stepping actions, the immersion head 6 provides a stable immersion flow field 5 in the immersion head 6 within the field range of the projection objective 4 according to the motion state of the workpiece table 8, and meanwhile, the immersion flow field 5 is ensured to be sealed with the outside, and liquid is ensured not to leak. The image of the integrated circuit on the mask 3 is transferred to a silicon wafer 7 coated with photosensitive photoresist by imaging exposure through an illumination system 2 and a projection objective 4 and the immersion liquid in an immersion liquid flow field 5, thereby completing the exposure.
Referring to fig. 2, the conventional immersion lithography machine operates according to the following principle: a liquid supply device 11 is provided to supply immersion liquid to the immersion head 6 via a line 12 to form an immersion liquid flow field 5. The liquid supply device 11 is provided with a liquid pressure unit and a flow rate control unit, and the pressure and the flow rate of the immersion liquid supply are limited within a certain range. By arranging the water pollution treatment unit in the liquid supply equipment 11, the water pollution is treated to meet the requirement of immersion liquid cleanness. By providing a temperature control unit in the liquid supply apparatus 11, the supply of water is treated to meet the immersion liquid temperature requirement. An air supply device 13 is arranged and communicated with the immersion head 6 through a pipeline 14 and is used for ultra-clean wet air compensation of the immersion liquid flow field 5 and the silicon wafer 7. A gas-liquid recovery device 15 is provided for recovering gas and liquid through a line 16 communicating with the immersion head 6. Ultra-clean wet air pressure and flow control units are arranged in the air supply equipment 13 and the gas-liquid recovery equipment 15, the air supply pressure and the flow are controlled within a certain range, and the gas-liquid recovery pressure and the flow control units are arranged, the gas-liquid recovery pressure and the flow are controlled within a certain range; arranging an ultra-clean wet air pollution control unit, and treating the pollution in the ultra-clean wet air until the pollution meets the requirement; and arranging an ultra-clean wet air temperature and humidity control unit, and processing the ultra-clean wet air until the ultra-clean wet air meets the temperature and humidity requirements.
Referring to fig. 2, the conventional immersion head 6 has a different outer contour but an inner contour which is a tapered structure matching the lens geometry of the projection objective 4. The immersion liquid supplied from the liquid supply device 11 flows out through an immersion liquid supply flow passage in the immersion head 6 and then fills the space between the projection objective 4 and the silicon wafer 7, and the immersion liquid flows out through an immersion liquid recovery flow passage in the immersion head 6 and then is recovered by a gas-liquid recovery device. Therefore, an immersion flow field 5 is formed between the objective lens 4 and the silicon wafer 7, and the liquid in the immersion flow field 5 is required to be in a continuous flowing state without backflow, and the transient and steady changes of the components, the pressure field, the velocity field and the temperature field of the liquid are less than a certain range.
Referring to fig. 3, in the immersion lithography, when the silicon wafer 7 moves relative to the immersion flow field 5, the meniscus at the edge of the immersion flow field 5 is stretched out, a liquid film 51 is formed on the surface of the silicon wafer 7, and the stretched liquid film 51 is continuously evaporated and generates an evaporation refrigeration effect during the evaporation process. The evaporation of the liquid film 51 is a result of the thermal motion of the molecules on the surface of the liquid, and the average kinetic energy of the molecular motion is reduced to lower the temperature of the liquid surface as the molecules with the greater kinetic energy are lost by the evaporation. The liquid film 51 is required to continuously absorb latent heat of vaporization in the process of evaporation phase change; for example, 1kg of water to steam at one atmosphere absorbs 2256kJ of heat. The continuous evaporation and heat absorption of the liquid film 51 can lower the temperature of the silicon wafer 7, and directly cause the silicon wafer 7 to generate thermal deformation; thermal deformation of the silicon wafer 7 may cause positioning errors (such as Overlay) of the silicon wafer 7, and ultimately affect the exposure performance of the apparatus.
Aiming at the defects, a series of temperature control liquid flow path cavities are arranged in the workpiece table 8, and the temperature control liquid flow path cavities are internally filled with temperature control fluid to be used for controlling the temperature of the workpiece table 8 and compensating the adverse effect generated by the evaporation refrigeration of a liquid film on the surface of the silicon wafer 7; however, in the exposure process, the workpiece stage 8 continuously performs acceleration and deceleration movements in different directions in a horizontal plane, the movement direction is 81, which causes slippage of liquid in the workpiece stage 8 relative to the workpiece stage 8, that is, fluctuation of the flow velocity of the liquid in the workpiece stage 8 relative to the workpiece stage 8, which causes fluctuation of compensation of evaporation refrigeration of a liquid film on the surface of the silicon wafer 7, and analysis shows that the local temperature change of the silicon wafer 7 caused by the fluctuation of the flow velocity is about 0.001 ℃, which causes a positioning error of the silicon wafer 7, and finally affects the exposure performance of the equipment.
Disclosure of Invention
The invention aims to solve the technical problem of providing a wafer bearing system and immersion lithography equipment so as to solve the defect of temperature fluctuation of liquid in a workbench caused by the slippage of immersion liquid due to acceleration and deceleration movement of the workbench in the exposure process.
In order to solve the technical problem, the invention provides a wafer bearing system which comprises a workpiece table, wherein a plurality of liquid flow path cavities are arranged in the workpiece table, the liquid flow path cavities are distributed in a mode of taking a horizontal plane central point of the workpiece table as a center symmetry, and temperature control liquids in opposite directions flow through two adjacent liquid flow path cavities.
Furthermore, the wafer bearing system provided by the invention has a circular liquid flow path cavity when viewed from the vertical direction in a plane.
Furthermore, in the wafer carrying system provided by the invention, the vertical cross sections of the liquid flow path cavities are the same.
Further, in the wafer carrying system provided by the invention, the distance between the central points of two adjacent liquid flow path cavities in the horizontal plane direction is less than four times of the width of the liquid flow path cavity in the horizontal plane direction.
Furthermore, in the wafer carrying system provided by the invention, each liquid flow path cavity has a rectangular vertical cross section.
Furthermore, in the wafer carrying system provided by the invention, the inner side surface of each liquid flow path cavity is provided with a plurality of enhanced heat transfer structures.
Furthermore, in the wafer carrying system provided by the invention, the heat transfer enhancement structure is a rib or a bump.
Furthermore, in the wafer carrying system provided by the present invention, each of the liquid flow path cavities has a supply flow path for providing the temperature control liquid and a recovery flow path for recovering the temperature control liquid, and the supply flow paths of different liquid flow path cavities are independent from each other, and the recovery flow paths of different liquid flow path cavities are independent from each other.
Further, in the wafer carrying system provided by the present invention, a branch flow rate adjusting device is disposed on the supply flow path of each liquid flow path cavity, and is used for adjusting the flow rate of the temperature control liquid supplied to each liquid flow path cavity.
Further, in the wafer carrying system of the present invention, the temperature control liquid in the supply flow path of each liquid flow path chamber is divided from the external temperature control liquid supply source by a splitter.
Further, in the wafer carrying system provided by the present invention, a main flow regulating device is disposed between the splitter and the external temperature-controlled liquid supply source.
In order to solve the above technical problem, the present invention further provides an immersion lithography apparatus comprising a main frame, an illumination system, a projection objective, an immersion head, and a wafer carrying system as described above.
Compared with the prior art, the wafer bearing system and the immersion lithography equipment provided by the invention have the advantages that the temperature of the workpiece platform is controlled by the temperature control liquid circulating in the cavities of the liquid flow paths which is arranged in the workpiece platform and is distributed in a mode of taking the horizontal plane central point of the workpiece platform as the center, so that the temperature loss generated by the evaporation refrigeration of the liquid film on the surface of the wafer is compensated. Temperature control liquid with opposite directions flows in the two adjacent liquid flow path cavities, so that when the workpiece table moves in an acceleration and deceleration manner in the exposure process and slides relative to the workbench, the temperature control liquid with the opposite flowing directions exists in the liquid flow path cavities, the sliding direction of the liquid is always the same as one flowing direction in the liquid flow path cavity, and the flow direction of the temperature control liquid in the liquid flow path cavity with the same sliding direction of the liquid offsets the fluctuation of compensation temperature caused by the liquid sliding caused by the acceleration and deceleration movement of the workpiece table in different directions in the horizontal plane. Thereby overcoming the positioning error of the wafer and improving the exposure performance of the photoetching equipment.
Drawings
FIG. 1 is a schematic diagram of a prior art immersion lithography machine;
FIG. 2 is a schematic diagram of an immersion liquid control system of a conventional immersion lithography machine;
FIG. 3 is a schematic diagram showing the relationship between the immersion liquid and the stage of a conventional exposure process;
FIG. 4 is a schematic view of the workpiece table of the present invention;
FIG. 5 is an enlarged cross-sectional view taken along line A-A or line B-B of FIG. 4;
FIG. 6 is a schematic view of an enhanced heat transfer structure within a liquid flow path cavity;
fig. 7 to 8 are schematic structural views of a liquid control system of the liquid flow path chamber;
fig. 9 is a schematic view of another enhanced heat transfer structure within a liquid flow path cavity.
Detailed Description
The invention is described in detail below with reference to the attached drawing figures:
fig. 4 is a schematic structural diagram of the workpiece stage of the present invention. Referring to fig. 4 and 5, a wafer supporting system according to an embodiment of the present invention includes a workpiece stage 81, where a plurality of liquid flow path cavities are uniformly distributed IN the workpiece stage 81, where each liquid flow path cavity is provided with an independent inlet IN and an independent outlet OUT, and two adjacent liquid flow path cavities are flowed with temperature control liquids IN opposite directions. Fig. 4 shows that 6 liquid flow path cavities are not limited to 6, and may be increased or decreased according to actual needs, including a plurality of odd liquid flow path cavities 8101, 8103, and 8105 and a plurality of even liquid flow path cavities 8102, 8204, and 8106, where temperature control liquid in a first direction flows through the odd liquid flow path cavities; temperature control liquid in a second direction flows in the even number of liquid flow path cavities, and the first direction is opposite to the second direction. That is, the liquid flow direction in the odd-numbered liquid flow path cavities 8101, 8103 and 8105 of the embodiment of the present invention is counterclockwise, and the liquid flow direction in the even-numbered liquid flow path cavities 8202, 8104 and 8106 is clockwise, as shown by the arrow direction in the corresponding liquid flow path cavities.
In the embodiment of the invention, the temperature of the workpiece table 81 is controlled by the temperature control liquid circulating in the cavities of the liquid flow paths arranged in the workpiece table 81, so as to compensate the temperature loss generated by the evaporation refrigeration of the liquid film of the immersion liquid on the surface of the wafer in the immersion lithography equipment, namely compensate the heat loss. By circulating temperature control liquids in opposite directions in two adjacent liquid flow path cavities, when the workpiece table 81 moves in an acceleration and deceleration manner in the exposure process and the liquid in the liquid flow path cavity of the workpiece table 81 slides relative to the workbench 81, the temperature control liquids in opposite circulating directions exist in the liquid flow path cavities, so that the sliding direction of the liquid is always the same as one circulating direction of the liquid in the liquid flow path cavity, and the flowing direction of the temperature control liquid in the liquid flow path cavity, which is the same as the sliding direction of the liquid, counteracts the fluctuation of compensation temperature caused by the liquid sliding when the workpiece table 81 moves in the acceleration and deceleration manner in different directions in a horizontal plane. That is, when the liquid slides counterclockwise, the flowing direction of the liquid generating the sliding is the same as the flowing direction of the temperature control liquid in the odd-numbered liquid flow path cavities, and when the liquid slides clockwise, the flowing direction of the liquid generating the sliding is the same as the flowing direction of the temperature control liquid in the even-numbered liquid flow path cavities, so that the temperature fluctuation caused by the liquid sliding when the workpiece table 81 performs acceleration and deceleration movement in different directions in the horizontal plane is offset. Therefore, the embodiment of the invention overcomes the positioning error of the wafer and improves the exposure performance of the photoetching equipment.
Referring to fig. 4, in order to obtain better temperature uniformity and stability of the wafer, a plurality of liquid flow path cavities are distributed in a manner of being centered symmetrically with respect to a center point of a horizontal plane of the workpiece stage 81.
Referring to fig. 4, in order to improve the manufacturing accuracy and obtain better temperature uniformity and stability, the liquid flow path cavity of the embodiment of the invention has a circular shape when viewed from the vertical plane. The plurality of circular liquid flow cavities are distributed outwards in a concentric circle at the center point of the horizontal plane of the workbench 81, and the liquid flow cavities outwards from the center point of the horizontal plane of the workbench 81 sequentially comprise a liquid flow cavity 8106, a liquid flow cavity 8105, a liquid flow cavity 8104, a liquid flow cavity 8103, a liquid flow cavity 8102 and a liquid flow cavity 8101. That is, the circular size of the liquid flow path chamber outward from the center point of the horizontal plane of the table 81 increases in order. Alternatively, the liquid flow path cavity in the embodiment of the present invention may have a shape of a regular polygon such as a regular hexagon and a regular octagon when viewed from above in the vertical direction.
Fig. 5 is an enlarged cross-sectional view taken along line a-a or line B-B of fig. 4. Referring to fig. 5, in order to further obtain better temperature uniformity of the wafer, the vertical cross-section of each liquid flow path cavity is the same and rectangular. That is, the inlet IN and the outlet OUT of the 6 liquid flow path chambers have the same vertical cross section. The liquid flow path comprises an outlet section 8101a and an inlet section 8101b of the liquid flow path cavity 8101, an outlet section 8102a and an inlet section 8102b of the liquid flow path cavity 8102, an outlet section 8103a and an inlet section 8103b of the liquid flow path cavity 8103, an outlet section 8104a and an inlet section 8104b of the liquid flow path cavity 8104, an outlet section 8105a and an inlet section 8105b of the liquid flow path cavity 8105, and an outlet section 8106a and an inlet section 8106b of the liquid flow path cavity 8106. The cross section shapes and the cross section areas of the outlet cross section and the inlet cross section are completely the same, and the vertical cross section of the liquid flow path cavity body is rectangular, so that the liquid flow path cavity body has the advantages of simple structure and convenience in manufacturing. Wherein the rectangle includes a rectangle and a square. Of course, the shape of the vertical cross section of the liquid flow path cavity may be circular or regular polygon, as the manufacturing process allows.
Referring to fig. 5, in order to make the temperature of the horizontal surface of the worktable more uniform and to obtain better temperature uniformity of the wafer, when the vertical cross-sectional shape of the liquid flow path cavity of the embodiment of the present invention is rectangular, the distance L between the center points of two adjacent liquid flow path cavities in the horizontal surface direction is less than four times the width B of the liquid flow path cavity in the horizontal surface direction, that is, L is less than or equal to 4B. When L >4B, when the temperature control liquid flowing in the liquid flow path chamber moves in an acceleration and deceleration manner on the table 81, due to the inertia, the flow gap of the generated temperature control liquid becomes large when the direction of the temperature control liquid in the liquid flow path chamber changes, so that a large temperature fluctuation occurs at the instant of acceleration and deceleration, thereby adversely affecting the temperature uniformity of the wafer.
Fig. 6 is a schematic view of an enhanced heat transfer structure within a liquid flow path cavity, and fig. 9 is a schematic view of another enhanced heat transfer structure within the liquid flow path cavity. Referring to fig. 6 and 9, in the wafer carrying system according to the embodiment of the invention, the inner side surface of each liquid flow path cavity is provided with a plurality of enhanced heat transfer structures, wherein the enhanced heat transfer structures may be discrete structures or continuous structures. For a more clear description of the scheme of the enhanced heat transfer structure, the following description uses the 7 th liquid flow path cavity 8107 different from the above 6 liquid flow path cavities 8101 to 8106, and actually, the enhanced heat transfer structure may be disposed in each fluid flow path cavity, and the 7 th liquid flow path cavity 8107 is only an example of an embodiment of the present invention and is not to be taken as a limitation of the present invention. Referring to fig. 6, the enhanced heat transfer structure according to the embodiment of the present invention is a discrete structure, and includes fins 8112 that are uniformly spaced and distributed are disposed on a left inner side surface 8108 and a right inner side surface 8109 of a liquid flow path cavity 8107, the fins 8112 are rectangular, and no fins are disposed on an upper surface 8110 and a lower surface 8111 of the liquid flow path cavity 8107. Referring to fig. 9, the enhanced heat transfer structure of the embodiment of the invention is a discrete structure, which is a plurality of bumps 8122 distributed at uniform intervals, and is only disposed on the left inner side surface 8108 and the right inner side surface 8109 of the liquid flow path cavity 8107, and no bumps are disposed on the upper surface 8110 and the lower surface 8111 of the liquid flow path cavity 8107. The nubs 8122 have an arcuate surface that creates little resistance to the flow of liquid through the cavity 8107.
The liquid flow path cavity (hereinafter, referred to as cavity) with the enhanced heat transfer structure can increase the contact surface area between the temperature control liquid and the cavity, so that the temperature of the liquid in the cavity is uniformly and rapidly transferred to the worktable 81 through the enhanced heat transfer structure on the side surface, and the upper surface of the worktable rapidly forms uniform and stable temperature. The heat transfer enhancement structure is substantially a heat exchange structure, and the temperature of the circulating liquid is rapidly exchanged with the temperature of the worktable through the heat transfer enhancement structure, so that the temperature of the worktable 81 is more stable and uniform. The enhanced heat transfer structure is only arranged on the side surface of the cavity, and is not arranged on the upper surface and the lower surface of the cavity, so that the condition that when the upper surface is arranged, and when the suddenly-cooled or suddenly-heated liquid which forms a contrast with the temperature of the upper surface of the working table 81 flows through, the unfavorable temperature difference phenomenon is caused on the upper surface of the working table 81, and the wafer is damaged is avoided. In addition, the enhanced heat transfer structure can realize the anisotropy of heat transfer coefficients, the heat transfer coefficients in the horizontal direction and the vertical direction are different, and the enhanced heat transfer structure is arranged on the left inner side surface and the right inner side surface of the liquid flow path cavity distributed in concentric circles, so that the heat transfer coefficients of the liquid flow path cavity in the horizontal direction are larger, and the temperature distribution in the horizontal plane is uniform.
Embodiments of the present invention further provide an immersion lithography apparatus, including a main frame, an illumination system, a projection objective, an immersion head, and the wafer carrying system as described above.
Fig. 7 to 8 are schematic structural views of a liquid control system of the liquid flow path chamber. Referring to fig. 7 and 8, the liquid flow path cavities provided by the embodiment of the invention include each liquid flow path cavity having a supply flow path 81131 for supplying the temperature control liquid and a recovery flow path 81132 for recovering the temperature control liquid, and the supply flow paths 81131 of different liquid flow path cavities are independent from each other, and the recovery flow paths 81132 of different liquid flow path cavities are independent from each other. A branch flow rate adjusting device 81133 is provided on the supply flow path of each liquid flow path chamber for adjusting the flow rate of the temperature control liquid supplied to each liquid flow path chamber. The temperature-controlled liquid in the supply channel 81131 of each liquid channel chamber is branched from the external temperature-controlled liquid supply source by a splitter. A primary flow regulating device 81103 is provided between the flow divider and an external temperature controlled liquid supply.
Fig. 7 shows a separate control scheme of the liquid control system for each liquid flow path chamber. Fig. 8 is a hybrid control scheme of a combination of an overall control scheme and a separate control scheme of a liquid control system of several liquid flow path chambers.
The embodiment of the present invention describes a mixing control scheme with three liquid flow path chambers, but is not limited to three. The three liquid flow path chambers are denoted by reference numerals 8114, 8115, and 8116, respectively, which are distinguished from the above-described embodiments. The method comprises the following steps:
a liquid supply path 81141 and a liquid recovery path 81142 communicating with the liquid flow path chamber 8114, and a branch flow rate adjusting device 81143 for the liquid supply path 81141;
a liquid supply flow path 81151 and a liquid recovery flow path 81152 communicating with the liquid flow path chamber 8115, and a branch flow rate adjusting device 81153 provided in the liquid supply flow path 81151;
a liquid supply path 81161 and a liquid recovery path 81162 communicating with the liquid flow path chamber 8116, and a branch flow rate adjusting device 81163 for the liquid supply path 81161;
all the liquid supply flow paths are communicated with a total liquid supply flow path 81101 through a flow divider, all the liquid recovery flow paths are communicated with a total liquid recovery flow path 81102 through a return device, and the total liquid supply flow path 81101 is provided with a main flow rate adjusting device 81103. The flow divider and the reflux device are of the same structure with different installation directions, for example, the flow divider and the reflux device can be multi-way pipelines such as a tee joint and the like.
It is of course also possible to provide a temperature regulator and/or a flow rate regulator in each liquid supply flow path and/or in the liquid main supply flow path. The temperature regulator is used for regulating the temperature of the temperature control liquid. The flow rate regulator may be pressure regulated to provide different liquid flow rates through different pressure settings.
The overall control scheme in the liquid control system with several liquid flow path cavities according to the embodiment of the present invention is to remove all the branch flow rate adjusting devices on the liquid flow path cavities in the mixing control scheme, and only remain the main flow rate adjusting device 81103 on the liquid main supply flow path 81101.
The present invention is not limited to the above-described embodiments, and various changes and modifications within the scope of the present invention are within the scope of the present invention.
Claims (12)
1. The wafer bearing system is characterized by comprising a workpiece table, wherein a plurality of liquid flow path cavities are arranged in the workpiece table, the liquid flow path cavities are distributed in a mode of taking the horizontal plane central point of the workpiece table as the center symmetry, and temperature control liquids in opposite directions flow through the adjacent two liquid flow path cavities.
2. The wafer carrier system of claim 1, wherein the liquid flow path chamber is circular when viewed from a vertical top view.
3. The wafer carrier system of claim 1, wherein each of the liquid flow path chambers has the same vertical cross-section.
4. The wafer carrier system of claim 3, wherein the distance in the horizontal plane between the center points of two adjacent liquid flow path chambers is less than four times the width in the horizontal plane of the liquid flow path chambers.
5. The wafer carrier system of claim 3, wherein each of the liquid flow path cavities has a rectangular vertical cross-section.
6. The wafer carrier system of claim 1, wherein the interior surface of each of the fluid flow chambers is provided with a plurality of enhanced heat transfer structures.
7. The wafer carrier system of claim 6, wherein the enhanced heat transfer structure is a fin or a bump.
8. The wafer carrier system of claim 1, wherein each of the liquid flow path chambers has a supply flow path for providing the temperature control liquid and a recovery flow path for recovering the temperature control liquid, and wherein the supply flow paths of different liquid flow path chambers are independent of each other and the recovery flow paths of different liquid flow path chambers are independent of each other.
9. The wafer carrier system of claim 8, wherein a branch flow regulator is provided in the supply flow path of each liquid flow path chamber for regulating the flow of temperature controlled liquid supplied to the respective liquid flow path chamber.
10. The wafer carrier system of claim 9, wherein the temperature controlled liquid in the supply flow path of each liquid flow path chamber is diverted from the external temperature controlled liquid supply by a diverter.
11. The wafer carrier system of claim 10, wherein a main flow regulating device is disposed between the flow splitter and an external temperature controlled liquid supply.
12. An immersion lithographic apparatus comprising a main frame, an illumination system, a projection objective, an immersion head and a wafer carrier system as claimed in any one of claims 1 to 11.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810690347.1A CN110658683A (en) | 2018-06-28 | 2018-06-28 | Wafer carrier system and immersion lithographic apparatus |
| TW108122718A TWI729426B (en) | 2018-06-28 | 2019-06-27 | Wafer carrier system and immersion lithography equipment |
| PCT/CN2019/093323 WO2020001550A1 (en) | 2018-06-28 | 2019-06-27 | Wafer carrier system and immersion lithography apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810690347.1A CN110658683A (en) | 2018-06-28 | 2018-06-28 | Wafer carrier system and immersion lithographic apparatus |
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| Publication Number | Publication Date |
|---|---|
| CN110658683A true CN110658683A (en) | 2020-01-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810690347.1A Pending CN110658683A (en) | 2018-06-28 | 2018-06-28 | Wafer carrier system and immersion lithographic apparatus |
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| Country | Link |
|---|---|
| CN (1) | CN110658683A (en) |
| TW (1) | TWI729426B (en) |
| WO (1) | WO2020001550A1 (en) |
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- 2019-06-27 WO PCT/CN2019/093323 patent/WO2020001550A1/en active Application Filing
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| CN1781181A (en) * | 2003-03-31 | 2006-05-31 | 兰姆研究公司 | Substrate support having temperature controlled surface |
| CN101819388A (en) * | 2005-06-21 | 2010-09-01 | Asml荷兰有限公司 | Lithographic equipment and device making method |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW202001448A (en) | 2020-01-01 |
| TWI729426B (en) | 2021-06-01 |
| WO2020001550A1 (en) | 2020-01-02 |
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Application publication date: 20200107 |