CN110620087A - Heat dissipation bottom plate, heat dissipation element and IGBT module - Google Patents
Heat dissipation bottom plate, heat dissipation element and IGBT module Download PDFInfo
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- CN110620087A CN110620087A CN201810639793.XA CN201810639793A CN110620087A CN 110620087 A CN110620087 A CN 110620087A CN 201810639793 A CN201810639793 A CN 201810639793A CN 110620087 A CN110620087 A CN 110620087A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a heat dissipation bottom plate, a heat dissipation element and an IGBT module, wherein the heat dissipation bottom plate comprises an aluminum silicon carbide plate and a heat dissipation column, the aluminum silicon carbide plate is provided with a first main surface and a second main surface which are oppositely arranged, at least part of the first main surface is covered with a first copper spraying layer, the heat dissipation column is welded on the first copper spraying layer, and the thickness of the first copper spraying layer is 20-250 mu m; the heat dissipation column is a copper-containing heat dissipation column. The heat dissipation bottom plate comprises the aluminum silicon carbide plate and the copper-containing heat dissipation column welded on the aluminum silicon carbide plate, so that the heat dissipation bottom plate has a linear expansion coefficient which is more matched with that of the ceramic circuit substrate, the stability of the module packaging performance can be improved, and the service life can be prolonged; the copper-containing heat dissipation column with high heat conductivity in the heat dissipation bottom plate further improves the heat dissipation performance; meanwhile, the welding position between the copper-containing heat dissipation column and the aluminum silicon carbide plate is provided with the copper spraying layer, a bonding layer with a melting point, a thermal expansion coefficient and high mechanical strength is provided, and the bonding force between the copper-containing heat dissipation column and the aluminum silicon carbide plate can be further improved.
Description
Technical Field
The disclosure relates to the field of power modules, in particular to a heat dissipation bottom plate, a heat dissipation element and an IGBT module.
Background
At present, the packaging bottom plate for the high-power IGBT module is mainly a Cu (copper) bottom plate and an AlSiC (aluminum silicon carbon) bottom plate. Compared with a Cu base plate, the linear expansion coefficient of the AlSiC base plate is more excellent in thermal matching with the ceramic circuit substrate and the chip, the thermal stress is smaller, the AlSiC specific strength is high, the module packaging performance can be more stable, and the service life is prolonged. However, the thermal conductivity of the high thermal conductivity AlSiC prepared at present is 200W/(m.K), which is different from the thermal conductivity of copper 380W/(m.K), and the heat dissipation Pin of the AlSiC bottom plate is made of Al (aluminum), so that the efficiency of heat dissipation in contact with the cooling liquid is more limited by only 150W/(m.K) of thermal conductivity. Meanwhile, in the production process of the conventional AlSiC radiating bottom plate, an Al Pin needle is directly cast and formed through a mold, and the mold is high in friction force and easy to damage when the Pin needle is demolded, so that the mold is high in cost.
Disclosure of Invention
The purpose of the present disclosure is to provide a heat-dissipating substrate having good thermal conductivity, high matching between the coefficient of linear expansion and the ceramic circuit substrate and the chip, and high bonding force between the heat-dissipating stud and the substrate.
In order to achieve the above object, a first aspect of the present disclosure provides a heat dissipation base plate, including an aluminum silicon carbide plate and a heat dissipation column, wherein the aluminum silicon carbide plate has a first main surface and a second main surface which are oppositely arranged, at least a part of the first main surface is covered with a first copper-sprayed layer, the heat dissipation column is welded on the first copper-sprayed layer, and the thickness of the first copper-sprayed layer is 20-250 μm; the heat dissipation column is a copper-containing heat dissipation column.
Optionally, the heat-dissipating stud is a copper metal heat-dissipating stud or a copper alloy heat-dissipating stud.
Optionally, the heat dissipation column is formed into a cylinder or a truncated cone, the axial direction of the heat dissipation column is perpendicular to the first main surface of the aluminum silicon carbide plate, one end of the heat dissipation column is welded to the first copper spraying layer, and the other end of the heat dissipation column is a free end.
Optionally, the diameter of the heat dissipation column is 1-6 mm, the axial height is 3-10 mm, and the draft angle of the heat dissipation column is 0-5 °.
Optionally, the heat dissipation base plate includes a plurality of heat dissipation pillars, and the plurality of heat dissipation pillars are welded to the first copper-sprayed layer in parallel at intervals.
Optionally, the distance between two adjacent heat dissipation columns is 2.5-15 mm.
Optionally, the heat dissipation base plate includes a solder layer disposed between the heat dissipation pillar and the first copper spraying layer.
Optionally, the solder layer contains solder, and the solder comprises lead-based solder and/or lead-free solder; the lead-based solder comprises PbSn and/or PbSnAg, and the lead-free solder comprises at least one of SnAg, SnSb, SnAgCu, Sn-Ag-Bi-Cu-Ge and Sn-Cu-Ni.
A second aspect of the present disclosure provides a heat dissipating element comprising the heat dissipating base plate according to the first aspect of the present disclosure.
Optionally, the heat dissipation element further comprises a copper-clad ceramic substrate welded to the second main surface of the aluminum silicon carbide sheet.
The third aspect of the present disclosure provides an IGBT module including an IGBT circuit board and the heat dissipation element according to the second aspect of the present disclosure.
Through the technical scheme, the heat dissipation bottom plate comprises the aluminum silicon carbide plate and the copper-containing heat dissipation column welded on the aluminum silicon carbide plate, so that the heat dissipation bottom plate has a linear expansion coefficient which is more matched with that of the ceramic circuit substrate, the stability of the module packaging performance can be improved, and the service life is prolonged; the copper-containing heat dissipation column with high heat conductivity in the heat dissipation bottom plate further improves the heat dissipation performance; meanwhile, the welding position between the copper-containing heat dissipation column and the aluminum silicon carbide plate is provided with the copper spraying layer, a bonding layer with a melting point, a thermal expansion coefficient and high mechanical strength is provided, and the bonding force between the copper-containing heat dissipation column and the aluminum silicon carbide plate can be further improved.
Additional features and advantages of the disclosure will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure without limiting the disclosure. In the drawings:
fig. 1 is a schematic structural diagram of an embodiment of a heat dissipation element of the present disclosure.
Description of the reference numerals
1 aluminum silicon carbide plate 2 first copper spraying layer
3 solder layer 4 heat dissipation column
51 first metallic nickel layer
6 DBC solder layer 7 copper-clad ceramic substrate
71 second copper layer 72 first copper layer
73 ceramic insulating plate
Detailed Description
The following detailed description of specific embodiments of the present disclosure is provided in connection with the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present disclosure, are given by way of illustration and explanation only, not limitation.
In the present disclosure, the use of directional words such as "up and down" generally means up and down in the normal use state of the device, unless stated to the contrary. The "inner and outer" are with respect to the outline of the device itself.
As shown in fig. 1, a first aspect of the present disclosure provides a heat dissipation base plate, which includes an aluminum silicon carbide plate 1 and a heat dissipation pillar, wherein the aluminum silicon carbide plate 1 has a first main surface and a second main surface that are oppositely disposed, at least a portion of the first main surface is covered with a first copper-sprayed layer 2, the heat dissipation pillar 4 is welded to the first copper-sprayed layer 2, and a thickness of the first copper-sprayed layer 2 is 20 to 250 μm; the heat-dissipating stud 4 is a copper-containing heat-dissipating stud.
The heat dissipation bottom plate comprises the aluminum silicon carbide plate and the copper-containing heat dissipation column welded on the aluminum silicon carbide plate, so that the heat dissipation bottom plate has a linear expansion coefficient which is more matched with that of the ceramic circuit substrate, the stability of the module packaging performance can be improved, and the service life is prolonged; the copper-containing heat dissipation column with high heat conductivity in the heat dissipation bottom plate further improves the heat dissipation performance; meanwhile, the welding position between the copper-containing heat dissipation column and the aluminum silicon carbide plate is provided with the copper spraying layer, a bonding layer with a melting point, a thermal expansion coefficient and high mechanical strength is provided, and the bonding force between the copper-containing heat dissipation column and the aluminum silicon carbide plate can be further improved.
According to the present disclosure, the copper-containing heat-dissipating stud means a heat-dissipating stud known to those skilled in the art, that is, the material of the heat-dissipating stud contains metallic copper, and the heat-dissipating stud may also contain inorganic non-metallic material and/or metallic material, for example, one or more of metallic zinc, manganese, aluminum, tin, lead, silicon and silver, and further, in order to enhance the heat-dissipating effect of the heat-dissipating stud, the heat-dissipating stud may be a metallic copper heat-dissipating stud or a copper alloy heat-dissipating stud, for example, at least one of a red copper heat-dissipating stud, a brass heat-dissipating stud, a bronze heat-dissipating stud and a white copper heat-dissipating stud. The content of copper in the heat-dissipating stud can vary within a wide range, for example, the content of metallic copper can be 60 to 100% by weight, preferably 90 to 100% by weight.
According to the present disclosure, the shape of the heat dissipation pillar is not particularly required, for example, the heat dissipation pillar may be a pillar with one end welded to the aluminum silicon carbide plate and the other end being a free end, in an embodiment of the present disclosure, the heat dissipation pillar may be formed as a cylinder or a truncated cone, the axial direction of the heat dissipation pillar may be perpendicular to the first main surface of the aluminum silicon carbide plate, so as to facilitate the welding operation and improve the heat dissipation effect, one bottom surface of the cylinder or the truncated cone may be welded to the first copper spraying layer, and the other end opposite thereto may be a free end, wherein in an embodiment of the truncated cone heat dissipation pillar, the large end of the truncated cone heat dissipation pillar may be welded to the first copper spraying layer, and the small end may be a free end, so as to facilitate the mold drawing and further improve the heat dissipation effect. Furthermore, the diameter of the heat dissipation column can be 1-6 mm, and preferably 2.5-4.5 mm; the axial height can be 3-10 mm, and preferably 5-8 mm; the draft angle of the heat-dissipating stud may be 0 ° to 5 °, preferably 0 ° to 2 °. In other embodiments of the present disclosure, the heat dissipation pillar may be a prism such as at least one of a triangular prism, a quadrangular prism, and a pentagonal prism.
According to the present disclosure, the number of the heat dissipation pillars in the heat dissipation base plate is not limited, and may be one or more, further, in order to improve the heat dissipation effect, the heat dissipation base plate may include a plurality of heat dissipation pillars, and the plurality of heat dissipation pillars may be welded on the first copper spraying layer in parallel at intervals. The number and the distribution form of the heat dissipation columns are not particularly limited, and can be selected according to the heat dissipation area and the product weight requirement, for example, the number of the heat dissipation columns can be 150-1500, and preferably 300-1100; among a plurality of heat dissipation posts, the distance of two adjacent heat dissipation posts can be 2.5 ~ 15mm, preferably 3.5 ~ 10mm, and in this disclosure, the distance of two adjacent heat dissipation posts means the post heart interval, the interval at two adjacent heat dissipation post bottom surface centers promptly. The shape of the plurality of heat-dissipating studs may be the same or different, and is preferably the same for ease of preparation.
Aluminum silicon carbide plates (AlSiC plates) may be known to those skilled in the art in light of this disclosure as composites formed by aluminum composited with silicon carbide.
According to the present disclosure, the first copper spraying layer can effectively improve the bonding strength of the first copper spraying layer with the aluminum silicon carbide plate and the heat dissipation column, and the thickness of the first copper spraying layer is preferably 30-150 μm. Within the above preferable range, the mechanical strength of the first copper-sprayed layer is more suitable, and the bonding force to the aluminum silicon carbide plate and the heat dissipation post is stronger.
According to the present disclosure, in order to improve the soldering strength between the heat dissipation pillar and the aluminum silicon carbide plate, in one embodiment of the present disclosure, the heat dissipation base plate may include a solder layer disposed between the heat dissipation pillar and the first copper spray layer. The thickness of the solder layer can vary within a wide range, for example, from 20 to 150 μm. The solder layer may contain solder, the kind of solder may be conventional in the art, preferably, the solder may include lead-based solder and/or lead-free solder, preferably lead-free solder for environmental protection; the lead-based solder may include PbSn and/or PbSnAg, and the lead-free solder may include at least one of SnAg, SnSb, SnAgCu, Sn-Ag-Bi-Cu-Ge, and Sn-Cu-Ni.
According to the present disclosure, in order to protect the heat dissipation base plate and prevent corrosion, at least a portion of the surface of the aluminum silicon carbide plate in the present disclosure may be covered with a protective layer, and preferably, the surface of the aluminum silicon carbide plate may include a heat dissipation pillar welding area located on the first main surface and a non-heat dissipation pillar welding area other than the heat dissipation pillar welding area, at least the non-heat dissipation pillar welding area may be covered with the protective layer, and the heat dissipation pillar welding area may be covered or not covered with the protective layer; in the case that the heat-dissipating stud land is coated with a protective layer, as shown in fig. 1, the first copper-spraying layer 2 may be covered on the protective layer; under the condition that the welding area of the heat dissipation column is not coated with the protective layer, the first copper spraying layer can directly cover the surface of the aluminum silicon carbide plate. That is, as shown in fig. 1, the protective layer may cover the entire surface of the aluminum silicon carbide plate 1, in which case there is a protective layer between the first copper-sprayed layer 2 and the aluminum silicon carbide plate 1; in another case, the protection layer covers the surface of the aluminum silicon carbide plate except the welding area of the heat dissipation column, the aluminum silicon carbide plate of the welding area of the heat dissipation column is exposed, and the first copper-spraying layer covers the surface of the exposed welding area of the heat dissipation column. The protective layer may be a first metal nickel layer 51, preferably a nickel plating layer, which are known to those skilled in the art and will not be described herein. The protective layer of the above preferred kind is distributed with micropores with appropriate number and pore diameter, and in the embodiment that the first copper spraying layer covers the protective layer, the copper in the first copper spraying layer can enter the micropores on the surface of the protective layer, thereby further improving the bonding force between the first copper spraying layer and the aluminum silicon carbide plate and the weldability of the heat dissipation copper column.
Furthermore, the thickness of the first metal nickel layer can be 4-20 μm, preferably 5-15 μm. The protective layer with the preferable thickness range can effectively protect and prevent the aluminum silicon carbide plate from corrosion and has proper mechanical property and welding property.
Further, in order to protect the heat dissipation post and prevent corrosion, in one embodiment of the present disclosure, the surface of the heat dissipation post may include a welding surface and a non-welding surface other than the welding surface, and at least the non-welding surface may be coated with a second nickel metal layer; can cladding or not cladding on the face of weld have the second metallic nickel layer, under the circumstances that the cladding has the second metallic nickel layer on the face of weld, can also have the second metallic nickel layer between first copper spraying layer and the heat dissipation post, under the circumstances that the face of weld does not have the cladding of second metallic nickel layer, first copper spraying layer can be directly with face of weld welded connection. In other words, the second metal nickel layer can wrap all surfaces of the heat dissipation post, and the second metal nickel layer is arranged between the heat dissipation post and the first copper spraying layer; under another kind of circumstances, the non-welding face of the surface except that the welding face of heat dissipation post covers has the second metal nickel layer, and the welding face of heat dissipation post is exposed, and this exposed welding face is direct to spout the copper layer welding with first after the welding, in the implementation that this disclosed radiating bottom plate has the solder layer, this exposed welding face can be direct and solder contact and welding, because the wettability of copper-containing material and solder is better, the welding combines better, can further improve the cohesion of heat dissipation post and aluminium carborundum board. The welding surface of the heat dissipation column refers to the surface which is in welding contact with the aluminum silicon carbide plate when the heat dissipation column is welded with the aluminum silicon carbide plate.
Wherein, the thickness of the second metal nickel layer can be 2 to 20 μm, preferably 5 to 15 μm. The second metal nickel layer with the preferable thickness range can effectively protect and prevent the heat dissipation column from corrosion and has proper mechanical property and welding property.
In another specific embodiment of the present disclosure, the heat-dissipating base plate may further include a third nickel metal layer, where the third nickel metal layer may wrap part or all of the surface of the heat-dissipating base plate, and preferably, the third nickel metal layer wraps the surface of the heat-dissipating base plate not covered by the first nickel metal layer, so that all of the surface of the heat-dissipating base plate is wrapped by the first nickel metal layer and/or the third nickel metal layer; further preferably, the third metallic nickel layer may wrap all surfaces of the heat-dissipating base plate. At this moment, the heat dissipation column may be covered or not covered with the second metal nickel layer, preferably, the heat dissipation column is not covered with the second metal nickel layer, in this embodiment, the whole heat dissipation bottom plate after the aluminum silicon carbide plate is welded with the heat dissipation column is covered with the third metal nickel layer, which is more convenient for nickel plating operation.
Wherein, the thickness of the third metal nickel layer can be 2 to 20 μm, preferably 5 to 15 μm. The third metal nickel layer with the preferable thickness range can effectively protect the whole radiating bottom plate from corrosion and does not influence the overall performance of the radiating bottom plate.
As shown in fig. 1, a second aspect of the present disclosure provides a heat dissipating element including the heat dissipating base plate of the first aspect of the present disclosure.
Further, the heat dissipation element may further include a copper-clad ceramic substrate 7, and the copper-clad ceramic substrate 7 may be conformably welded to the second main surface of the aluminum silicon carbide board 1.
According to the present disclosure, a copper-clad ceramic substrate is understood to mean an electronic base material made by directly sintering a copper foil on a ceramic surface using a dbc (direct Bond coater) technique. Further, as shown in fig. 1, the copper-clad ceramic substrate 7 may include a ceramic insulating plate 73, the ceramic insulating plate 73 may have a first surface and a second surface that are oppositely disposed, the first surface and the second surface may be provided with a first copper layer 72 and a second copper layer 71, respectively, and the first copper layer 72 may be soldered to the second main surface of the aluminum silicon carbide plate 1.
According to the present disclosure, the thicknesses of the first copper layer 72 and the second copper layer 71 may vary within a wide range, and preferably, the ratio of the thicknesses of the first copper layer and the second copper layer may be (0.3 to 1.2): 1, preferably (0.5-0.9): 1, the thicknesses of the first copper layer and the second copper layer can be equal or different, preferably different, and the thickness of the second copper layer can be 0.1-0.5 mm.
According to the present disclosure, the ceramic insulating plate may be of a kind conventional in the art, and is preferably at least one of an alumina plate, an aluminum nitride plate, and a silicon nitride plate.
According to the present disclosure, the copper-clad ceramic substrate may be soldered to the heat sink base plate by a conventional method in the art, for example, by soldering, i.e., the copper-clad ceramic substrate 7 and the heat sink base plate may have a DBC solder layer 6 therebetween as shown in fig. 1.
In order to further improve the welding strength of the copper-clad ceramic substrate and the heat dissipation base plate, in one embodiment of the disclosure, the second main surface of at least part of the aluminum silicon carbide plate may be covered with a second copper-sprayed layer, and the first copper layer of the copper-clad ceramic substrate may be welded to the surface of the second copper-sprayed layer. The thickness of the second copper-sprayed layer may be the same as or different from that of the first copper-sprayed layer, and may be 10 to 300 μm, preferably 20 to 250 μm, and more preferably 30 to 150 μm. Within the above preferable range, the second copper-clad layer has more suitable mechanical strength and stronger bonding force to the copper-clad ceramic substrate and the aluminum silicon carbide plate.
In the embodiment of the present disclosure in which the surface of the heat dissipation base plate is covered with the protective layer, further, the second copper-sprayed layer may cover the second main surface of the heat dissipation base plate covered with the protective layer. In another embodiment, the surface of the heat dissipation base plate may be composed of a heat dissipation pillar welding area, a copper-clad ceramic substrate welding area and a non-welding area, the non-welding area may be covered with a protective layer, the first copper-sprayed layer may directly cover the surface of the heat dissipation pillar welding area, and the second copper layer may directly cover the surface of the copper-clad ceramic substrate welding area.
The heat dissipation element disclosed by the invention has the heat dissipation bottom plate with a proper thermal expansion coefficient, the heat matching performance with the copper-clad ceramic substrate is good, and the heat dissipation performance of the bottom plate is further enhanced by the copper-clad heat dissipation column.
The heat dissipation base plate of the present disclosure may be prepared by a method comprising the steps of: s1, spraying copper on the first main surface of the aluminum silicon carbide plate to form a first copper spraying layer; and S2, welding the heat dissipation column on the surface of the first copper-spraying layer.
According to the method, the copper-containing heat dissipation column is welded on the aluminum silicon carbide plate, so that the linear expansion coefficient matching of the aluminum silicon carbide plate and the ceramic circuit substrate after packaging can be ensured, the module packaging performance is more stable, the service life is prolonged, and the heat dissipation performance of the bottom plate is improved by using the copper-containing heat dissipation column with high heat conductivity; simultaneously, through the welding department setting between copper-containing heat dissipation post and aluminium carborundum board spout the copper layer, provide a fusing point and the suitable and high tie layer of mechanical strength of coefficient of thermal expansion, can further improve the cohesion between copper-containing heat dissipation post and the aluminium carborundum board
In one embodiment of the present disclosure, the method of forming the first copper-sprayed layer may be cold spraying, and the conditions of the cold spraying may include: the temperature is 20-200 ℃, preferably 50-150 ℃, and the pressure can be 30-40 MPa, preferably 35-38 MPa; the bonding strength of the first copper-sprayed layer obtained by cold spraying under the above conditions may be 100 to 300MPa, further 150 to 295MPa, the oxidation rate may be 0 to 0.3%, further 0 to 0.1%, the porosity may be 0 to 0.5%, further 0 to 0.3%, and the thermal conductivity may be greater than 80% of that of oxygen-free copper, specifically 320 to 400W/(m · K). In this embodiment, by the cold spraying method, a further optimized first copper-sprayed layer can be obtained, which has better bonding strength, lower oxidation rate, and more appropriate porosity and thermal conductivity, and can further promote the strength of the heat-dissipating copper pillar and the aluminum silicon carbide plate bonded by welding. Under the above preferred cold spray operating conditions, the overall properties of the resulting first copper-sprayed layer can be further improved. In other embodiments of the present disclosure, the method of forming the first copper-sprayed layer may be thermal spraying or copper plating.
The method of soldering may be conventional in the art, for example, a heat sink stud may be soldered to the first copper sprayed layer surface of an aluminum silicon carbide board by solder in accordance with the present disclosure. Specifically, in one embodiment of the present disclosure, a method of welding may include: and (3) loading the heat dissipation column into the guide plate, enabling the welding surface of the guide plate to face upwards, then sequentially loading and stacking the solder and the aluminum silicon carbide plate (the first copper spraying layer faces the solder), and finally covering the guide plate with a pressing block and feeding the guide plate into a welding furnace to be heated for welding. The welding conditions can also be conventional in the art, and for example, the preheating temperature is 150-270 ℃, the welding temperature is 270-450 ℃, and the welding can be carried out in a reducing atmosphere or an inert atmosphere. The amount of the solder may be such that the thickness of the solder layer is 20 to 150 μm. The solder species may be conventional in the art, preferably the solder may comprise a lead-based solder and/or a lead-free solder, preferably a lead-free solder for environmental protection; the lead-based solder may include PbSn and/or PbSnAg, and the lead-free solder may include at least one of SnAg, SnSb, SnAgCu, Sn-Ag-Bi-Cu-Ge, and Sn-Cu-Ni.
According to the present disclosure, in order to protect the heat dissipation base plate and prevent corrosion, a protective layer may be formed on at least a portion of the surface of the aluminum silicon carbide plate, and preferably, the method may include, before step S1, performing a first nickel plating on the surface of the aluminum silicon carbide plate to obtain the aluminum silicon carbide plate wrapped with the protective layer, and then performing a copper spraying on at least a portion of a first main surface of the aluminum silicon carbide plate wrapped with the protective layer to form a first copper spraying layer; the protective layer is wrapped on the surface of the aluminum silicon carbide plate, so that the aluminum silicon carbide plate can be effectively protected from corrosion, and the first copper spraying layer is favorably combined with the aluminum silicon carbide plate; further, before the copper spraying, a sand blasting pretreatment may be performed or not performed on at least a portion of the first main surface of the aluminum silicon carbide plate wrapped with the protective layer, that is, before the copper spraying, the method may further optionally include performing a sand blasting pretreatment on at least a portion of the region of the protective layer wrapped on the surface of the aluminum silicon carbide plate, where in an embodiment in which the sand blasting pretreatment is performed, at least a portion of the protective layer on the first main surface may be removed, so as to obtain a bare aluminum silicon carbide plate surface on at least a portion of the first main surface, and the bare aluminum silicon carbide plate surface may be used to be directly covered by the first copper spraying layer.
The term "blasting pretreatment" may be used to refer to a process of cleaning and roughening the surface of a substrate by the impact of a high-velocity sand stream, and in the method of the present disclosure, may be used to remove the protective layer from the first major surface to expose at least a portion of the first major surface.
The method and the operation conditions for performing the first nickel plating are well known to those skilled in the art, for example, the method for performing the first nickel plating may be electroplating or chemical plating, and the amount of the metal nickel used for performing the first nickel plating may be such that the thickness of the first metal nickel layer is 4 to 20 μm, preferably 5 to 15 μm.
According to the present disclosure, the first copper spraying layer obtained by first copper spraying can effectively improve the bonding strength with the aluminum silicon carbide plate and the heat dissipation column, wherein the amount of copper in the first copper spraying layer is such that the thickness of the first copper spraying layer is further preferably 30-150 μm. Within the above preferable range, the mechanical strength of the first copper-sprayed layer is more suitable, and the bonding force to the aluminum silicon carbide plate and the heat dissipation post is stronger.
According to the disclosure, in order to improve the welding effect, the heat dissipation pillar may be subjected to a surface cleaning treatment before welding, and the surface cleaning treatment may include a method that is conventional in the art, such as an ultrasonic cleaning method, and specifically, may include steps of ultrasonic cleaning with a cleaning oil powder solution, then ultrasonic cleaning with clear water, and drying.
In one embodiment of the present disclosure, to protect the heat-dissipating stud from corrosion, the method may include: before step S2, a second nickel plating is performed on the surface of the heat-dissipating stud to form a second nickel metal layer, which may wholly or partially include the heat-dissipating stud.
In order to further improve the welding strength between the heat dissipation column and the aluminum silicon carbide plate, in a preferred embodiment of the present disclosure, the method may further include: before step S2, the portion of the second metallic nickel layer on the surface of the bonding surface of the heat-dissipating stud is removed to expose the bonding surface of the heat-dissipating stud, and the exposed bonding surface is directly bonded to the first copper-spraying layer. The method of removing the second metallic nickel layer may be well known to those skilled in the art, such as grinding or cutting.
For example, in a preferred embodiment of the present disclosure, the aluminum silicon carbide board may be first nickel-plated to obtain a protective layer-covered aluminum silicon carbide board, the surface of the protective layer-covered aluminum silicon carbide board is copper-plated to form a first copper-plated layer, the surface of the heat dissipation pillar is second nickel-plated to form a second metal nickel layer, the second metal nickel layer covered on the surface of the bonding surface of the heat dissipation pillar is removed to expose the bonding surface, and the exposed bonding surface is then welded to the first copper-plated layer to obtain the heat dissipation base plate. Wherein, before the surface of the aluminum silicon carbide plate covered with the protective layer is sprayed with copper to form the first copper spraying layer, part of the protective layer on the first main surface can be removed by sand spraying. The term "blasting pretreatment" is used herein to mean a process of cleaning and roughening the surface of a substrate by the impact of a high-velocity sand stream, and the specific method and operating conditions thereof are conventional in the art and will not be described herein.
The method for forming the second nickel metal layer may be conventional in the art, and for example, includes electroplating or chemical plating, and the amount of the metal nickel used for the second nickel plating may be such that the thickness of the second nickel metal layer is 2 to 20 μm, preferably 5 to 15 μm.
In another embodiment of the present disclosure, to further protect the integrated heat sink base plate from corrosion, the method may comprise: after step S2, the heat-dissipating substrate is subjected to third nickel plating to form a third metallic nickel layer. For example, in a preferred embodiment, first nickel plating may be performed on an aluminum silicon carbide plate to obtain an aluminum silicon carbide plate covered with a protective layer, copper spraying is performed on the surface of the aluminum silicon carbide plate covered with the protective layer to form a first copper spraying layer, then a copper-containing heat dissipation column is welded to the first copper spraying layer to obtain a heat dissipation base plate, and finally, third nickel plating is performed on the entire heat dissipation base plate to obtain a heat dissipation base plate with a third metal nickel layer on the surface, where the third metal nickel layer may wrap all or part of the surface of the heat dissipation base plate, and preferably, the third metal nickel layer wraps all the surface of the heat dissipation base plate. Wherein, before the surface of the aluminum silicon carbide plate covered with the protective layer is sprayed with copper to form the first copper spraying layer, part of the protective layer on the first main surface can be removed by sand spraying. The method of performing the third nickel plating may be the same or different, preferably the same, as the first nickel plating, and the thickness of the third nickel metal layer may be the same or different, preferably the same, as the first nickel metal layer.
Aluminum silicon carbide plates may be known to those skilled in the art in light of this disclosure as composites of aluminum and silicon carbide having properties of low density, high thermal conductivity, and tunable coefficient of thermal expansion. The aluminum silicon carbide plates of the present disclosure may be commercially available or homemade. In a specific embodiment of the present disclosure, the method may further include a step of preparing the aluminum silicon carbide plate by a pressure aluminizing method, and the specific steps include, for example, placing the silicon carbide substrate in a mold, preheating the silicon carbide substrate to 500 to 700 ℃, then pouring molten aluminum liquid into the mold, removing gas by vacuum pumping, pressurizing the molten aluminum liquid to 4 to 10MPa by nitrogen gas, filling the mold with the molten aluminum liquid uniformly, cooling, and demolding to obtain the aluminum silicon carbide plate.
The heat dissipating element of the present disclosure may be prepared by a method comprising: the heat-dissipating base plate is prepared by the method of the third aspect of the present disclosure.
According to the present disclosure, the heat dissipating element may further include a copper-clad ceramic substrate, and the method may include: s3, soldering the copper-clad ceramic substrate to the second main surface of the aluminum silicon carbide board, wherein the soldering method is conventional in the art, and can be performed by soldering, for example.
Further, in order to improve the welding strength of the copper-clad ceramic substrate and the heat dissipation base plate, the method may further include, before step S3, performing a second copper spraying on the second main surface to form a second copper-sprayed layer, and then welding the copper-clad ceramic substrate to the surface of the second copper-sprayed layer. The method and operating conditions for performing the second copper spray may be the same as or different from, and preferably the same as, the first copper spray layer.
A third aspect of the present disclosure provides an IGBT module including an IGBT circuit board and the heat dissipating element of the second aspect of the present disclosure.
The present disclosure is further described below by way of examples, but the present disclosure is not particularly limited thereto. In the following examples of the present disclosure, the thickness of the film was measured using a film thickness meter (Fischer MPOR, germany), and the thickness measurement results were the average of the thickness values of 4 test positions taken in the film.
Example 1
This embodiment is used to illustrate the heat dissipation base plate and the manufacturing method thereof of the present disclosure. The method comprises the following steps:
1. and (3) air pressure casting infiltration forming of an AlSiC plate: adopting air pressure infiltration cabin body equipment, filling a SiC matrix into a mold, preheating the SiC matrix to 500-700 ℃, pouring aluminum, vacuumizing (removing gas to prevent the product from generating air holes), filling nitrogen for pressurizing (4-10 MPa to promote the aluminum liquid to uniformly fill the mold), and cooling to obtain an AlSiC plate;
2. plating nickel on the surface of the AlSiC plate, wherein the thickness of the nickel layer is 12 mu m;
3. welding a heat dissipation column region on the first main surface of the AlSiC plate with the nickel plated surface, and performing cold spraying copper to form a first copper spraying layer with the thickness of 100 mu m;
4. cleaning the surface of the heat dissipation column: ultrasonically cleaning by using a metal copper heat dissipation column through a washing oil powder solution, ultrasonically cleaning by using clear water, and drying; the shape of the copper heat dissipation column is a cylinder (draft angle is 0 degree), the diameter is 4.18mm, and the height is 8 mm; the distance between two adjacent heat dissipation columns is 5.8 mm;
5. welding: and (3) sequentially stacking the guide plate filled with the copper heat dissipation column, the solder and the AlSiC plate (the first main surface faces the solder), covering a pressing block, putting the pressing block into a welding furnace in inert atmosphere, preheating to 150-270 ℃, and welding at 270-450 ℃ to obtain the heat dissipation bottom plate (368 column) of the embodiment.
6. Coating copper on ceramic substrate (Al)2O3DBC) is soldered to the second main surface of the heat-dissipating substrate, thereby obtaining the heat-dissipating device of the present embodiment.
Examples 2 to 7
Using the method and materials of example 1, heat-dissipating studs of different sizes and arrangements than example 1 were used, as shown in Table 2.
Example 8
The method and material of example 2 were used except that the first copper-sprayed layer had a thickness of 200 μm.
Comparative example 1
The method and material of example 1 were used except that the heat-dissipating stud was replaced with an Al heat-dissipating stud.
Comparative example 2
The method and material of example 1 were used except that the copper spray treatment of step 3 was not included.
Comparative example 3
The method and material of example 1 were used except that the first copper-sprayed layer had a thickness of 300 μm.
Comparative example 4
The method and material of example 1 were used except that the first copper-sprayed layer had a thickness of 10 μm.
Test example 1
Testing the packaging heat dissipation performance:
the heat dissipation elements of examples 1 and 8 and comparative examples 1 to 4 were respectively manufactured into packaged IGBT modules, and the packaged heat dissipation performance was tested on a TiX500Fluke thermal infrared imager/reactive rack. Temperature rise test conditions: VDC bus voltage 750V; the carrier frequency is 8 kHz; the output frequency is 100 Hz; the flow rate of the cooling liquid is 8L/min; the cooling liquid was cooled to 55 ℃.
And (3) testing the welding bonding force of the heat dissipation column: and (3) respectively testing the bonding force between the 30 heat dissipation columns and the aluminum silicon carbide plate in the examples 1 and 8 and the comparative examples 1-4 by adopting a micro-welding point strength tester.
The test results are shown in Table 1.
TABLE 1
The data in table 1 results show that: with the increase of current, the packaging heat dissipation performance of the heat dissipation bottom plate disclosed by the invention has more obvious advantages, the temperature of a packaging module of the heat dissipation bottom plate is lower by more than 25 ℃ than that of a packaging module of the heat dissipation bottom plate of a comparative example 1 under the condition of 300A, and the heat dissipation performance is obviously improved;
compared with the AlSiC board surface directly welded with the Cu radiating column of the comparative example 2, the area of the AlSiC board surface welded with the radiating column of the example 1 is welded with the Cu radiating column after cold spraying copper, and the bonding force between the radiating column and the bottom board is obviously improved.
The first copper-sprayed layers of examples 1 and 8, which are within the thickness range of the present disclosure, combine more excellent heat dissipation performance and bonding force with the heat dissipation stud at the same time, as compared to comparative examples 3 and 4.
Test example 2
The packaged IGBT modules manufactured by the heat dissipation elements of the embodiments 1-7 and the comparative example 1 are subjected to simulation analysis respectively, and the simulation process is as follows: establishing a model, dividing grids, setting parameters, operating calculation and reporting a result;
the parameters used for the simulation were: the ambient temperature was 85 ℃, and this analysis did not take into account the natural convection between the module and the outside air at 85 ℃. The fluid was water, the initial temperature of the fluid was 65 ℃ and the inlet flow rate was 0.735 m/s. The power is loaded on the upper surface of the chip, the total loss of the system is 2kW, the distribution ratio of the loss of the two chips, namely the FRD is 3:1, the junction temperature of the chip is calculated, and the test result is listed in Table 2.
TABLE 2
368-pillar Al heat-dissipating pillar + AlSiC plate + Al of comparative example 12O3In contrast to DBC, the 368-pillar Cu heat-dissipating pillar + AlSiC plate + Al of example 12O3The packaging junction temperature of the DBC is lower by more than 2.5 ℃ under the same use condition; comparing example 1 with example 2, it can be seen that, on the premise of 368 columns of AlSiC-Cu (phi 4.18, 4 degree taper) heat dissipation bottom plate packaging, AlN DBC is greater than Al2O3The DBC junction temperature is about 7 ℃; on the premise that the number of the Cu radiating columns is the same, the larger the diameter of the Cu radiating column is, the lower the junction temperature is; on the premise that the diameters of the Cu radiating columns are the same, the junction temperature is low when the number of the Cu radiating columns is large; comparing the embodiment 3 with the embodiment 4, it can be seen that the larger the heat dissipation area of the Cu heat dissipation column is, the lower the junction temperature is; however, generally speaking, the heat dissipation area is large, the weight of the Cu heat dissipation pillars is also large, and the arrangement and selection of the Cu heat dissipation pillars need to be reasonably performed according to the product requirements.
The preferred embodiments of the present disclosure are described in detail with reference to the accompanying drawings, however, the present disclosure is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present disclosure within the technical idea of the present disclosure, and these simple modifications all belong to the protection scope of the present disclosure.
It should be noted that the various features described in the above embodiments may be combined in any suitable manner without departing from the scope of the invention. In order to avoid unnecessary repetition, various possible combinations will not be separately described in this disclosure.
In addition, any combination of various embodiments of the present disclosure may be made, and the same should be considered as the disclosure of the present disclosure, as long as it does not depart from the spirit of the present disclosure.
Claims (11)
1. The heat dissipation bottom plate is characterized by comprising an aluminum silicon carbide plate and a heat dissipation column, wherein the aluminum silicon carbide plate is provided with a first main surface and a second main surface which are oppositely arranged, at least part of the first main surface is covered with a first copper spraying layer, the heat dissipation column is welded on the first copper spraying layer, and the thickness of the first copper spraying layer is 20-250 micrometers; the heat dissipation column is a copper-containing heat dissipation column.
2. The heat spreader plate of claim 1, wherein the heat spreader beam is a copper metal or copper alloy heat spreader beam.
3. The heat dissipating base plate according to claim 1, wherein the heat dissipating stud is formed in a cylindrical shape or a truncated cone shape, an axial direction of the heat dissipating stud is perpendicular to the first main surface of the aluminum silicon carbide plate, and one end of the heat dissipating stud is welded to the first copper-sprayed layer and the other end is a free end.
4. The heat dissipating base plate of claim 3, wherein the heat dissipating stud has a diameter of 1 to 6mm, an axial height of 3 to 10mm, and a draft angle of 0 to 5 °.
5. The heat spreader plate of claim 1, wherein the heat spreader plate comprises a plurality of the heat spreader posts, the heat spreader posts being soldered to the first copper-sprayed layer in parallel and spaced apart.
6. The heat dissipation base plate according to claim 5, wherein the distance between two adjacent heat dissipation columns is 2.5-15 mm.
7. The heat spreading base plate according to claim 1, wherein the heat spreading base plate comprises a solder layer disposed between the heat spreading posts and the first copper-sprayed layer.
8. The heat spreading base plate according to claim 7, wherein the solder layer contains solder, the solder comprising lead-based solder and/or lead-free solder; the lead-based solder comprises PbSn and/or PbSnAg, and the lead-free solder comprises at least one of SnAg, SnSb, SnAgCu, Sn-Ag-Bi-Cu-Ge and Sn-Cu-Ni.
9. A heat dissipating component, comprising the heat dissipating base plate according to any one of claims 1 to 8.
10. The heat dissipating element of claim 9, further comprising a copper clad ceramic substrate bonded to the second major surface of the aluminum silicon carbide sheet.
11. An IGBT module characterized in that it comprises an IGBT circuit board and a heat dissipating element according to claim 9 or 10.
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