CN110504246A - Luminescent device and light emitting device - Google Patents
Luminescent device and light emitting device Download PDFInfo
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- CN110504246A CN110504246A CN201810483397.2A CN201810483397A CN110504246A CN 110504246 A CN110504246 A CN 110504246A CN 201810483397 A CN201810483397 A CN 201810483397A CN 110504246 A CN110504246 A CN 110504246A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
- H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
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-
- H01L33/60—
-
- H01L33/62—
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Led Device Packages (AREA)
Abstract
The present invention provides a kind of luminescent device and light emitting device, LED support used by LED includes substrate and the circuit layer that is set on substrate, is dielectrically separated from substrate, namely LED support itself is just laid with circuit layer, the circuit layer includes the circuit for the LED chip in the lamp bead region on substrate to be connect with the tie point of other devices on other lamp beads and/or substrate, the connection with other lamp beads or device directly can be realized by the circuit layer of LED support itself, not need additionally to use circuit board;LED component provided by the invention is also provided with secondary optics reflective lens on LED, to be diffused control to the light that LED chip emits, so that the light that LED launches can be uniformly distributed in broader region, so that having better light distribution property and light utilization efficiency using back light unit made from the light emitting device.
Description
Technical field
The present invention relates to (Light Emitting Diode, the light emitting diode) field LED more particularly to a kind of photophores
Part and light emitting device.
Background technique
With the development of LED technology and the various scenes of every field application, produce the LED junction for meeting various demands
Structure.In various LED structures, can all use substantially and arrive LED support, and in order to meet various demands, also derived various sizes,
The LED support of structure and material.But the setting of current LED support structure is all only carrying LED chip, to LED chip
Play the role of protection, and the positive and negative electrode of LED chip is drawn.Current various LED supports do not undertake wiring,
It, can only be by additional when needing to be electrically connected LED with other LED or be electrically connected with other devices in application scenes
Pcb board circuit realize the electrical connection.
In addition, when the LED core for needing to be arranged in a LED support more serial or parallel connections or series-parallel Hybrid connections
When piece, current way also can only be that multiple LED chips are arranged on the substrate of bracket, then additional again to be realized by gold thread
Connection between each LED chip, for example, with reference to the existing typical LED structure of Fig. 1-one kind shown in Fig. 2, wherein Fig. 1 is LED
Ignore except the top view after fluorescent glue, Fig. 2 is the cross-sectional view of the LED of Fig. 1, in Fig. 1-Fig. 2, it is assumed that need in LED support
It is current to do rule and successively realize series circuit by gold thread in 1 when the more LED chips 11 being sequentially connected in series of setting
Electrical connection between upper 11 positive and negative anodes of adjacent LED chip.From shown in Fig. 1 it is found that by additionally using gold in LED support bottom
Line realizes the connection between each LED chip 11, and the route for needing to connect is more and miscellaneous, realizes the welding process inefficiency of connection,
And be limited to the limitation of LED support size and be easy to appear the situation that desoldering, rosin joint even weld mistake, cause product cost high, produces
Quality yields and poor reliability, and it is only to require to realize simplest series connection between LED chip 11 that Fig. 1-is shown in Fig. 2
Connection, if necessary to realize series-parallel Hybrid connections or other complicated connection sides between LED chip in a LED bracket
When formula, it can not achieve substantially in current LED support structure.
And LED be used as light source when, light often be emitted while being limited to finite region.Therefore, in order to by LED
Planar light source applied to display device etc., it is also necessary to be evenly distributed in light on broader region.
Summary of the invention
Luminescent device and light emitting device provided by the invention, mainly solving the technical problems that: solving existing LED cannot
Undertake wiring and problem that the light distributed areas launched are too small and uneven.
In order to solve the above technical problems, the present invention provides a kind of luminescent device, including LED and encapsulating in the LED is completed
Later, the reflective lens being arranged on the LED, the LED include substrate, be located at the substrate front side on and with it is described
The circuit layer and an at least LED chip that substrate is dielectrically separated from are equipped with lamp bead region, the LED on the substrate front side
Chip is set in the lamp bead region, and the circuit layer includes for by the LED chip in the lamp bead region on the substrate
The circuit being connect with the tie point of other devices in other lamp beads and/or the substrate;
The reflective lens are located on the substrate, and the reflective lens include lens body, are located at described
The light incident surface of mirror body lower part, positioned at the light-emitting face of the lens body side and positioned at the lens body top
The light of light reflection surface, the LED chip transmitting injects the lens body from the light incident surface, with the LED chip optical axis
Between angle be less than or equal to the first predetermined angle threshold value light after the reflective surface from the light-emitting face project.
In an embodiment of the present invention, the light incident surface is that the bottom that concaves from the lens body bottom is recessed
The light of the inner wall in cave, the LED chip transmitting is incident upon in the bottom depression, and the inner wall through the bottom depression is injected
The lens body;
The light reflection surface is the inner wall of the top depression to concave at the top of the lens body, is incident upon the lens
Angle in ontology and between the optical axis is less than or equal to the light of first predetermined angle threshold value in the light reflection surface
It reflects, and is projected from the light-emitting face.
In an embodiment of the present invention, the light-emitting face includes to the more of lens body side outside extension
A convex surface.
In an embodiment of the present invention, it is provided with a LED chip in the lamp bead region, or is provided at least two
Spacing is less than default first distance threshold value to form the plurality of LEDs chip of point light source, or be provided with more spacing be greater than it is default
Second distance threshold value is to form the plurality of LEDs chip of area source.
In an embodiment of the present invention, corresponding one of all lamp bead regions on the substrate are described reflective
The corresponding reflective lens in the lamp bead region on mirror or the substrate or one in the lamp bead region
The corresponding reflective lens of the described LED chip.
In an embodiment of the present invention, when being provided with plurality of LEDs chip in the lamp bead region, the plurality of LEDs
It include the LED chip of at least two different peak luminous wavelengths in chip.
In an embodiment of the present invention, the LED further includes being set to the LED chip and the reflective lens
Between luminescent conversion layer, substratum transparent or diffusion glue-line.
In an embodiment of the present invention, the LED include be set to the LED chip and the refraction type lens it
Between luminescent conversion layer, the LED chip in the lamp bead region includes the group of any one or at least two in following chip
It closes:
Peak luminous wavelength is the blue-light LED chip of 440nm to 500nm;
Peak luminous wavelength is the green LED chip of 510nm to 540nm;
Peak luminous wavelength is the yellow light LED chip of 550nm to 570nm;
Peak luminous wavelength is the red LED chip of 620nm or more;
The luminescent conversion layer is that the light that the LED chip issues is converted into default colour mixture light luminescent conversion layer.
In an embodiment of the present invention, the default colour mixture light includes white light.
In an embodiment of the present invention, the reflective lens be the round reflective lens to form circular light spot,
It forms the rectangular reflective lens of square focus spot or forms the oval reflective lens of ellipse.
In an embodiment of the present invention, the substrate front side is additionally provided with is dielectrically separated from substrate itself, and with institute
The first function electrical connection area of circuit layer electrical connection is stated, and/or, the substrate back is provided with to be dielectrically separated from substrate, and with
Second function of the circuit layer electrical connection is electrically connected area.
In an embodiment of the present invention, the circuit layer further includes driving circuit and/or is used to carry out LED chip
The control circuit of control.
It in an embodiment of the present invention, include at least two lamp bead regions on the substrate, the circuit layer includes
Anode pin welding section corresponding with the positive pin of LED chip to be placed in each lamp bead region and negative pin
With negative pin welding section, and the circuit that at least two lamp bead region is electrically connected.
In an embodiment of the present invention, there is a lamp bead region, the circuit layer includes and institute on the substrate
State the positive pin and the corresponding positive pin welding section of negative pin and cathode of LED chip to be placed in lamp bead region
Pin welding section;For placing a LED chip or at least two LED chips in the lamp bead region.
In an embodiment of the present invention, at least two LED chips are provided at least one described lamp bead region,
The circuit layer further includes realizing the chip connection circuit being electrically connected between each LED chip in lamp bead region;Described at least two
Circuit is connected by the chip between LED chip and realizes connection.
To solve the above-mentioned problems, the present invention also provides a kind of light emitting device, including luminescent device as described above, institutes
Stating light emitting device is lighting device, optical signal instruction device, light compensating apparatus or back lighting device.
The beneficial effects of the present invention are:
Luminescent device and light emitting device provided by the invention, firstly, LED support used by LED includes substrate and setting
It is just laid with circuit layer in the circuit layer namely LED support itself being dielectrically separated from substrate, with substrate, which includes using
In the electricity for connecting the LED chip in the lamp bead region on substrate with the tie point of other devices on other lamp beads and/or substrate
Road can directly pass through LED support itself in this way when needing to be electrically connected LED with other LED or be electrically connected with other devices
Circuit layer realizes the connection with other lamp beads or device, does not need additionally to use circuit board, can simplify connection structure and
It avoids preferably being applied to various application scenarios using the increase of size and cost caused by circuit board;
In addition, LED component provided by the invention also LED encapsulate after the completion of, be arranged on LED reflective lens (
Secondary optics reflective lens are set), to be diffused control to the light that LED chip emits, so that the light that LED launches can
It is uniformly distributed in broader region, so that there is better light distribution property using back light unit made from the LED component
And light utilization efficiency.
Detailed description of the invention
Fig. 1 is a kind of top view of LED structure;
Fig. 2 is the top view of the LED structure in Fig. 1;
Fig. 3 is the LED support structural schematic diagram that the circuit layer that the embodiment of the present invention one provides is higher than substrate front side;
Fig. 4 is the LED support structural schematic diagram that the circuit layer that the embodiment of the present invention one provides is flushed with substrate front side;
Fig. 5 is that the insulating layer that the embodiment of the present invention one provides is integrally-built LED support structural schematic diagram;
Fig. 6 is the insulating layer LED support structural schematic diagram compatible with circuit layer shape that the embodiment of the present invention one provides;
Fig. 7-1 is a kind of LED structure schematic diagram that the embodiment of the present invention one provides;
Fig. 7-2 is the width direction cross-sectional view that a reflective lens are arranged in Fig. 7-1;
Fig. 7-3 is the length direction cross-sectional view that a reflective lens are arranged in Fig. 7-1;
Fig. 7-4 is the width direction cross-sectional view that 3 reflective lens are arranged in Fig. 7-1;
Fig. 7-5 is the length direction cross-sectional view that 3 reflective lens are arranged in Fig. 7-1;
Fig. 7-6 is the width direction cross-sectional view that 9 reflective lens are arranged in Fig. 7-1;
Fig. 7-7 is the length direction cross-sectional view that 9 reflective lens are arranged in Fig. 7-1;
Fig. 8-1 is that the reflective lens that the embodiment of the present invention three provides and LED junction close schematic diagram;
Fig. 8-2 is the stereoscopic schematic diagram of the reflective lens in Fig. 8-1;
Fig. 8-3 is the stereoscopic schematic diagram of another reflective lens in Fig. 8-1;
Fig. 8-4 is the diagrammatic cross-section of the reflective lens in Fig. 8-2;
Fig. 8-5 is the hot spot schematic diagram of the reflective lens in Fig. 8-2 launched;
Fig. 9-1 is that the reflective lens that the embodiment of the present invention three provides and LED junction close schematic diagram;
Fig. 9-2 is the light path schematic diagram of the reflective lens in Fig. 9-1;
Figure 10-1 is the main view for another reflective lens that the embodiment of the present invention three provides;
Figure 10-2 is that the reflective lens and LED junction in Figure 10-1 close schematic diagram;
Figure 10-3 is the light path schematic diagram of the reflective lens in Figure 10-2;
Figure 11-1 is that another reflective lens that the embodiment of the present invention three provides and LED junction close schematic diagram;
Figure 11-2 is the stereoscopic schematic diagram of the reflective lens in Figure 11-1;
Figure 11-3 is the stereoscopic schematic diagram of another reflective lens in Figure 11-1;
Figure 11-4 is the diagrammatic cross-section of the reflective lens in Figure 11-2;
Figure 12-1 is the LED structure schematic diagram connected in series and parallel with multi-chip that the embodiment of the present invention three provides;
Figure 12-2 is LED cross-sectional view shown in Figure 12-1;
Wherein, the appended drawing reference 1 in Fig. 1-Fig. 2 is LED support, and 11 be LED chip;Appended drawing reference 31 in Fig. 3 is base
Plate, 32 be circuit layer;Appended drawing reference 41 in Fig. 4 is substrate, and 42 be circuit layer;Appended drawing reference 51 in Fig. 5 is substrate, and 52 are
Circuit layer, 53 be insulating layer;Appended drawing reference 61 in Fig. 6 is substrate, and 62 be circuit layer, and 63 be insulating layer;Fig. 7-1- Fig. 7-7
In, 911 be substrate, and 912 be LED chip, and 913 be reflective lens;In Fig. 8-1- Fig. 8-4,90 be lens body, and 901 be bottom
Portion's depression, 9011 be light incident surface, and 902 be the light reflection surface in the depression of top, and 903 be light-emitting face, and 904 be stabilizer blade, and 91 are
Substrate, 911 be illumination region;In Fig. 9-1- Fig. 9-2,100 be lens body, and 1001 be light incident surface, and 1002 be light reflection surface,
1003 be light-emitting face, and 101 be substrate, and 1011 be illumination region;In Figure 10-1- Figure 10-3,110 be lens body, and 1101 be light
The plane of incidence, 1102 be light reflection surface, and 1103 be light-emitting face, and 111 be substrate, and 1111 be illumination region;In Figure 11-1- Figure 11-4,
120 be lens body, and 1201 be light incident surface, and 1202 be light reflection surface, and 1203 be light-emitting face, and 1204 be stabilizer blade, and 121 are
Substrate, 1211 be illumination region;Appended drawing reference 181 in Figure 12-1- Figure 12-2 is electrically-conductive backing plate, and 182 be circuit layer, and 183 be exhausted
Edge layer, 1813 be box dam, and 180 be LED chip, and 1821 be pin welding section, and 187 be white oil layer.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, below by specific embodiment knot
Attached drawing is closed to be described in further detail the embodiment of the present invention.It should be appreciated that specific embodiment described herein is only used to
It explains the present invention, is not intended to limit the present invention.
Embodiment one:
It is only capable of playing the positive and negative electrode extraction for playing protection conjunction for LED chip to LED chip to solve existing LED support
Effect, and various problems caused by wiring cannot be undertaken, present embodiments provide a kind of LED support, the present embodiment
The LED support of offer carries circuit, included circuit can satisfy by LED chip to be placed in the lamp bead region on substrate with
Other lamp beads (can be other lamp beads on same substrate, be also possible to the lamp bead formed on other substrates) and/or substrate
Other upper devices (theoretically can be any other device, including but not limited to various chips, resistance, capacitor and other electricity
The device etc. that road is constituted, and these devices can be set and be encapsulated into an entirety with LED on substrate, can also be not arranged in
On substrate, and can be located at LED support outside) tie point (can be the various contacts that are electrically connected) connection circuit.When need by LED with
When other LED are electrically connected or are electrically connected with other devices, can directly it be realized and other lamp beads by the circuit layer of LED support itself
Or the connection of device, it does not need additionally to use circuit board, connection structure can be simplified and using caused by circuit board
The increase of size and cost.
In addition, LED component provided in this embodiment is arranged in obtained LED lamp bead also after LED encapsulation finishes
Reflective lens (namely setting secondary optics reflective lens), to be diffused control to the light that LED chip emits, so that
The light that LED launches can be uniformly distributed in broader region, so that having more using back light unit made from the LED component
Good light distribution property and light utilization efficiency.
In the present embodiment, when needing that plurality of LEDs chip is arranged in a lamp bead region, circuit layer may also include reality
The circuit being electrically connected between LED chip in existing lamp bead region, without additionally using pcb board outside LED or in LED support
The interior additional electrical connection realized between LED chip by gold thread, the use of the LED bracket can largely promote LED production
Reliability, versatility and the yields of product reduce the cost of LED product.
In the present embodiment, a lamp bead region on substrate front side refer on substrate front side be arranged LED chip with
Form the region of a lamp bead, and it should be understood that the lamp bead region on substrate front side in the present embodiment refers to space
Above substrate front side, including lamp bead region is directly arranged on substrate, the insulating layer or circuit layer being also included on substrate
Upper setting lamp bead region, and specifically can flexibly be set according to application scenarios.
In order to make it easy to understand, the structure of the LED first used to LED component below the present embodiment illustrates.
LED support provided in this embodiment includes substrate and the circuit layer that is set on substrate and is dielectrically separated from substrate,
Set circuit layer include for by the lamp bead region on substrate LED chip and other lamp beads and/or substrate on other
The circuit of the tie point connection of device optionally may also include and connect just with LED chip anode pin and negative pin respectively
Pole pin welding section and negative pin welding section;In this way when LED chip is arranged, the positive and negative of LED chip need to only can also be drawn
Foot positive pin welding section corresponding on circuit layer and the connection of negative pin welding section respectively, and between LED chip
Connection relationship can also then be realized by the circuit pre-set in circuit layer.Certainly, in the present embodiment, circuit layer can not also
Comprising positive pin welding section and negative pin welding section, and positive pin welding section and the setting of negative pin welding section are being propped up
In frame on other layer structures (such as substrate), as long as these positive pin welding sections and negative pin welding section and circuit layer are real
Existing corresponding electrical connection.
It should be understood that in the present embodiment, being dielectrically separated from mode and can flexibly set between circuit layer and substrate.
For example, then circuit layer can be arranged directly on substrate, at this time between circuit layer and substrate when substrate itself is insulating substrate
It has been just to be dielectrically separated from state;Certainly, when substrate is insulating substrate, one layer can also be arranged again between substrate and circuit layer
Insulating layer.In another example one layer insulating can be then set between substrate and circuit layer when substrate is electrically-conductive backing plate, or
It is realized absolutely by other any modes (such as setting specific structure keeps the interval of circuit layer and substrate front side empty) that are dielectrically separated from
Edge isolation.
In the present embodiment, the substrate that electrically-conductive backing plate can be constituted for various conductive materials, may be, for example, various metals and leads
Electric substrate, including but not limited to copper base, aluminum substrate, iron substrate;Electrically-conductive backing plate may be the mixing material comprising conductive material
Expect electrically-conductive backing plate, such as conductive rubber etc..
In the present embodiment, the substrate that insulating substrate can be constituted for various insulating materials, naturally it is also possible to include inside
Containing conductive material, outside is made of insulating materials, whole nonconducting substrate.Such as insulative type material may include but unlimited epoxy
Resinae (EP, Epoxide resin), high temperature resistant nylon (PPA plastics), polyphthalamide (PPA,
Polyphthalamide), poly terephthalic acid 1,4-CHDM ester (PCT, Poly1,4-cyclohexylene
Dimethylene terephthalate), epoxy molding plastic (EMC, Epoxy molding compound), unsaturated polyester (UP)
(UP) resin, liquid crystal polymer (LCP, Liquid Crystal Polymer), sheet molding compound (SMC, Sheet molding
Compound), polyester resin (PET, Polyethylene terephthalate), polycarbonate (PC,
Polycarbonate), polyhexamethylene adipamide (nylon 66).
In the present embodiment, substrate can be planar substrates, or front has bulge-structure or concave configuration
Non-planar substrate, and corresponding elevated regions and recessed area can be used for being arranged LED chip namely elevated regions or concave region
Domain can be used as crystal bonding area.And in the present embodiment, circuit layer can be covered in whole or in part in elevated regions or recessed area,
Circuit layer can not also be covered, specifically can flexibly be set with application scenarios according to actual needs.Additionally, it should be appreciated that
It is that the circuit layer in the present embodiment may be that the generally circuit layer of plane or partial region is bulge-structure or recessed
The entirety of structure is in nonplanar circuit layer, and these elevated regions or recessed area can be used for placing LED chip, namely
As crystal bonding area.
In the present embodiment, the circuit layer upper surface on substrate and setting can be flushed between substrate front side, it can also
To be higher than substrate front side, or it is lower than substrate front side, it specifically can be according to technique, the concrete application scene etc. using production LED support
Factor flexible setting.
For example, circuit layer is higher than substrate front side, and shown in Figure 3, circuit layer 32 is high in Fig. 3 in a kind of exemplary construction
In the upper surface (namely substrate front side) of substrate 31.It is shown referring to fig. 4 in another example, circuit layer 42 and base in Fig. 4
The upper surface of plate 41 flushes.Specifically select which kind of structure that can flexibly determine.
In addition, it is to be understood that in the present embodiment, when needing to increase insulating layer between substrate and circuit layer, and
When the insulating layer is for by being dielectrically separated between substrate and circuit layer, set insulating layer can directly will be on substrate
Region corresponding with circuit layer entirely covers, and insulating layer at this time is an overall structure;For example, with reference to shown in Fig. 5, in substrate
Insulating layer 53 is provided between 51 and circuit layer 52, insulating layer 53 covers region corresponding with circuit layer 52 on substrate 51.At this
In embodiment, which can also be adapted with the shape of circuit layer, as long as can reliably carry out circuit layer and substrate exhausted
Edge isolation.For example, with reference to shown in Fig. 6, being provided with insulating layer 63 between substrate 61 and circuit layer 62, insulating layer 63 with
The geomery of circuit layer 62 matches, and the unlapped region insulation layer 63 of circuit layer 62 does not also cover;Certainly, in the present embodiment
The set-up mode of insulating layer is not limited to mode shown in Fig. 5 and Fig. 6, realize circuit layer and substrate reliably insulate every
From on the basis of, the area and specific shape covered can be arbitrarily arranged.
In addition, it is to be understood that used technique can be flexible when insulating layer is disposed on the substrate in the present embodiment
Selection, for example including but be not limited to printing, pressing, paste etc..Correspondingly, the combination between circuit layer and insulating layer can also
Including but not limited to pressing, stickup and direct printed circuit layer etc. on the insulating layer.In the present embodiment, insulating layer can be used
The various insulating materials for being dielectrically separated from, for example including but be not limited to insulated paint, insulating cement, insulating paper, non-conductive fibre
Product, plastics, rubber, varnished cloth paper, glass, ceramics etc..
In the present embodiment, when circuit layer includes positive pin welding section and negative pin welding section, positive pin welding
Area and negative pin welding section specific distributing position and distribution mode on circuit layer can flexibly be set.In addition, circuit
Circuit between realization LED chip included by layer may include realizing be connected in series between LED chip, be connected in parallel, go here and there simultaneously
Join at least one of circuits such as Hybrid connections, and specifically can flexibly be set according to the application scenarios and demand of LED support.
LED used by LED component in the present embodiment can be obtained by the LED support of the included circuit of above-mentioned example
LED.And it should be understood that LED chip in the number in the lamp bead region in the present embodiment on substrate and each lamp bead region
Number etc. can flexibly set, and may include a crystal bonding area in a lamp bead region, can also according to demand include more
A crystal bonding area.For example, LED is point light source in a kind of example, settable LED chip is constituted in lamp bead region at this time
Point light source, or at least two LED chips are set in lamp bead region, but set at least two LED chips (such as two
Or three etc.) between spacing be less than default first distance threshold value to form point light source.In another example in some instances, LED
It provides area source (or referred to as block smooth surface), it at this time can be more in lamp bead region between (such as two, five, ten etc.)
Away from the plurality of LEDs chip for forming area source greater than default second distance threshold value.
For example, may include at least two lamp bead regions in a kind of example, on substrate, circuit layer includes and each lamp bead region
The corresponding positive pin welding section of the positive pin and negative pin of interior LED chip to be placed and negative pin welding
Area, and the circuit that at least two lamp bead regions are electrically connected.
In another example in a kind of example, a lamp bead region is set on substrate, circuit layer include in the lamp bead region to
The corresponding positive pin welding section of the positive pin and negative pin of the LED chip of placement and negative pin welding section.
In another example being provided at least two LED chips at least one lamp bead region, circuit layer is also in a kind of example
It may include realizing the chip connection circuit being electrically connected between each LED chip in lamp bead region;Pass through between at least two LED chips
The chip connection circuit realizes connection.
The number for the reflective lens being arranged on substrate in the present embodiment can also flexibly be set, it should be understood that
It is that lens are set on substrate in the present embodiment, not only refers to and lens are directly in contact with substrate to a kind of this setting
Mode, and the main body of the spatially lens referred to be located at substrate on, lens can be set up directly on substrate or
Perhaps on insulating layer or luminescent conversion glue-line or lens lower end contacts to form fixation with lens profile for circuit layer on substrate
Deng.
The reflective lens being arranged on LED in the present embodiment are secondary optics reflective lens, that is to say and seal in LED
It installs and finishes and then individually paste in obtained LED lamp bead a lens.Specific mounting method includes but is not limited to the side such as stickup
Formula.And in the present embodiment, reflective lens can choose the round reflective lens to form circular light spot, formation side according to demand
The rectangular reflective lens of shape hot spot or the oval reflective lens etc. for forming ellipse.
Material used by various types of lens, shape and size etc. also all can be determined flexibly in the present embodiment.Such as
Silica-gel lens, PMMA (polymethyl methacrylate is commonly called as: acrylic) lens, PC can be used, and (Polycarbonate gathers
Carbonic ester) lens, glass lens etc..
In addition, in the present embodiment, on substrate in lamp bead region other than the number of LED chip can flexibly be set, institute
Peak luminous wavelength (i.e. color) and peak luminous wavelength (i.e. the combination of color) combination of the LED chip of setting etc. also all may be used
Flexibly setting.For example, the LED chip being arranged on substrate in the present embodiment may include any one in following chip,
Or two or more any combination:
Blue chip of the peak luminous wavelength in 440nm to 500nm;
Green light chip of the peak luminous wavelength in 510nm to 540nm;
Yellow light chip of the peak luminous wavelength in 550nm to 570nm;
Peak luminous wavelength is greater than the red light chips of 620nm or more.
But it is to be understood that above-mentioned four kinds of chips are only one of the present embodiment example, however it is not limited to above-mentioned four
Kind chip.
In the present embodiment, the LED chip being arranged on substrate is one of four kinds of chips of above-mentioned example, and substrate
When the number of the LED chip of upper setting is at least two, the peak luminous wavelength of this at least two LED chip can identical (example
Such as all it is the blue chip that peak luminous wavelength is 440nm, 445nm or 450nm), it can also different (such as a part be luminous
Peak wavelength be 440nm, 445nm or 450nm blue chip, another part be peak luminous wavelength be 455nm, 465nm or
The blue chip etc. of 480nm).
In the present embodiment, the LED chip being arranged on substrate be above-mentioned example four kinds of chips in it is two or more when,
It may include specifically two kinds, three kinds or four kinds, and specific combination includes but is not limited to appointing for four kinds of chips of above-mentioned example
Meaning combination.When for example including two kinds, blue chip and green light chip can be, be also possible to blue chip and red light chips, or
Green light chip and yellow light chip;When including three kinds, it can be blue chip, green light chip and red light chips, be also possible to yellow light
Chip, blue chip and red light chips or blue chip, green light chip and yellow light chip etc..And according to above-mentioned analysis it is found that every
A kind of chip light emitting peak wavelength also may be the same or different.In order to make it easy to understand, the present embodiment is below with reference to several specific examples
It is illustrated.
In a kind of example, a kind of chip is arranged in the LED chip in lamp bead region and peak luminous wavelength is identical, for example,
Using the blue-light LED chip of peak luminous wavelength 500nm or the green LED chip of peak luminous wavelength 530nm.
In a kind of example, a kind of chip is arranged in the LED chip in lamp bead region and peak luminous wavelength includes at least two
The LED chip of kind, for example, using peak luminous wavelength for the blue-ray LED chip or peak luminous wavelength of 450nm and 500nm
For the yellow light chip of 550nm, 560nm and 570nm.
In another example, two kinds of chips and the luminescence peak of each chip is arranged in the LED chip in lamp bead region
Wavelength is identical, for example, using red LED chip and blue-light LED chip, the peak luminous wavelength of red LED chip is all
650nm, the peak luminous wavelength of blue-light LED chip are all 450nm.
In another example, the glow peak of two kinds of chips and at least one chip is arranged in the LED chip in lamp bead region
It is different to be worth wavelength, for example, using yellow light LED chip and green LED chip, the peak luminous wavelength of yellow light LED chip is all
560nm, the peak luminous wavelength of a part of green LED chip are 530nm, the luminescence peak wave of another part green LED chip
A length of 540nm.
In another example, three kinds of chips and the luminescence peak of each chip is arranged in the LED chip in lamp bead region
Wavelength is identical, for example, using blue-light LED chip, green LED chip and red LED chip, the luminescence peak of blue-light LED chip
Wavelength is all 480nm, and the peak luminous wavelength of green LED chip is all 535nm, and the peak luminous wavelength of red LED chip is all
For 620nm.
In another example, the glow peak of three kinds of chips and at least one chip is arranged in the LED chip in lamp bead region
It is different to be worth wavelength, for example, using blue-light LED chip, green LED chip and red-light LED chip, the glow peak of blue-light LED chip
Value wavelength is all 480nm, and the peak luminous wavelength of a part of green LED chip is 535nm, another part green LED chip
Peak luminous wavelength is 540nm, and the peak luminous wavelength of a part of red LED chip is 620nm, another part red-light LED core
The peak luminous wavelength of piece is 650nm.
In another example, four kinds of chips and the luminescence peak of each chip is arranged in the LED chip in lamp bead region
Wavelength is identical, for example, using blue-light LED chip, green LED chip, yellow light LED chip and red LED chip, blue-ray LED core
The peak luminous wavelength of piece is all 480nm, and the peak luminous wavelength of green LED chip is all 536nm, the hair of yellow light LED chip
Peak wavelength is all 570nm, and the peak luminous wavelength of red LED chip is all 625nm.
In LED encapsulation process, hair can be also formed between LED chip and lens by modes such as molding, spraying, dispensings
Light conversion layer, substratum transparent or diffusion glue-line.Namely the face that the illumination of LED provided in this embodiment shoots out, is presented to the user
Color can carry out flexible setting with application scenarios according to actual needs.It is that the illumination of LED shoots out, is presented to the user for which kind of face
Color, can be according to LED chip itself peak luminous wavelength, the luminescent conversion layer specifically used in the luminescent conversion layer of use
It determines.
In order to make it easy to understand, being illustrated below with the combination example of several LED chips and luminescent conversion layer.
As above analysis is it is found that the LED chip in the present embodiment in lamp bead region can be in four kinds of chips of above-mentioned example
Any one or at least two combination, therefore using any one in above-mentioned four kinds of chips or at least in the present embodiment
Two kinds of combination generates default colour mixture light in conjunction with luminescent conversion layer and is illustrated for example.And it should be understood that this implementation
Default colour mixture light in example can flexibly be set according to specific requirements, such as can be white light, can also be with magenta light, green light, indigo plant
White light etc..It is illustrated below by example of white light.
For example, when the LED chip in lamp bead region is any one in four kinds of chips of above-mentioned example, if it is blue light
Chip (such as peak luminous wavelength is 450nm), luminescent conversion layer at this time can use yellow fluorescent powder glue-line, yellow fluorescence
Film or yellow quantum dot QD film;If it is green light chip, luminescent conversion layer at this time can be glimmering using blue colour fluorescent powder and red
Manufactured QD film after manufactured fluorescent powder glue-line, fluorescent film or blue quantum dot and red quantum dot mix after the mixing of light powder;Such as
Fruit is yellow light chip, and luminescent conversion layer at this time can be using fluorescent powder glue-line, fluorescent film or blue made of blue colour fluorescent powder
QD film made of quantum dot, if it is red light chips, luminescent conversion layer at this time can use blue colour fluorescent powder and green fluorescence
Manufactured QD film after manufactured fluorescent powder glue-line, fluorescent film or blue quantum dot and green quantum dot mix after powder mixing.
In another example when the LED chip in lamp bead region is any two kinds of combination in four kinds of chips of above-mentioned example, such as
Fruit is the combination of blue chip and green light chip, and luminescent conversion layer at this time can be using phosphor gel made of red fluorescence powder
QD film made of layer, fluorescent film or red quantum dot;If it is the combination of blue chip and red light chips, luminescent conversion at this time
Layer can be using QD film made of fluorescent powder glue-line, fluorescent film made of green emitting phosphor or green quantum dot;If it is blue light
The combination of chip and yellow light chip, luminescent conversion layer at this time can use blue colour fluorescent powder, green emitting phosphor and red fluorescence
It is made after manufactured fluorescent powder glue-line, fluorescent film or blue quantum dot, green quantum dot and red quantum dot mixing after powder mixing
QD film, and so on.
In another example when the LED chip in lamp bead region is any three kinds of combination in four kinds of chips of above-mentioned example, such as
Fruit is the combination of blue chip, green light chip and red light chips, and luminescent conversion layer at this time can use blue colour fluorescent powder, green
Manufactured fluorescent powder glue-line, fluorescent film or blue quantum dot, green quantum dot and red after fluorescent powder and red fluorescence powder mixing
Manufactured QD film after quantum dot mixing;If it is the combination of red light chips, green light chip and yellow light chip, luminescent conversion at this time
Layer can be using QD film made of fluorescent powder glue-line, fluorescent film made of blue colour fluorescent powder or blue quantum dot.Certainly, some
In example, colour mixture light directly can also be mixed to get by chip self color, such as can directly pass through blue chip, green light chip
With red light chips combination without obtaining white light using luminescent conversion layer.Specific setting can flexibly be determined according to application scenarios.
In another example when the LED chip in lamp bead region is the combination of four kinds of chips of above-mentioned example, luminescent conversion at this time
Layer can be using QD film made of fluorescent powder glue-line, fluorescent film made of blue colour fluorescent powder or blue quantum dot;It is of course also possible to
It is additional in the white light obtained after the light mixing issued for direct blue chip, green light chip and red light chips itself and lamp bead region
The white light that the white light unit of setting issues remixes to obtain white light, which can pass to a few LED chip and illuminating rotary
It changes layer combination to obtain, can specifically use but be not limited to what any one of the above mode obtained.
In the present embodiment, the type for the light that LED chip itself issues can be macroscopic visible light, be also possible to
Visually sightless ultraviolet light, infrared light;When the type for the light that LED chip itself issues is the sightless ultraviolet light of naked eyes, red
When outer smooth, luminescent conversion layer can also be set on LED chip, naked eyes black light is converted into naked eyes visible light, so that
The light that LED illumination comes out is the visible light of user.For example, if thinking, LED is in when the light that LED chip itself issues is ultraviolet light
The current visible white light in family, then luminescent conversion layer can be red, green, blue fluorescent powder is mixed after be fabricated to.
In the present embodiment be arranged luminescent conversion layer when, can at least play the role of following: be LED illumination shoot out,
One of determinant of color being presented to the user, while the protective effect to LED chip can also be played, such as dust-proof, waterproof,
It is grease proofing etc..When being provided with substratum transparent on LED chip, the color that the illumination of LED shoots out, is presented to the user is
The mixed color of light that plurality of LEDs chip issues;For example, LED includes 3 chips, respectively blue-light LED chip, red-light LED
Chip, green light LED chip, then when being provided with substratum transparent on 3 LED chips, the illumination of LED shoots out, is presented to use
The color at family, be blue light, feux rouges, green light these three colors light mixing after color, i.e., it is white.Substratum transparent is to play
Protective effect to LED chip, such as dust-proof, Water-proof and oil-proof etc..When being provided with diffusion glue-line on LED chip, expand
Scattered glue-line can be made of inorganic type light diffusing agent and organic type light diffusing agent;The setting diffusion glue-line on LED chip
When, the scattering and transmission of light can be increased, while covering LED chip light emitting source and dazzling light source, and entire resin can be made
Softer, beautiful, graceful light is issued, the opaque comfortable effect of light transmission is reached;Certainly the present embodiment can also as needed
Corresponding spread powder is added in luminescent conversion glue-line.
In the present embodiment, luminescent conversion layer flexibly used according to concrete application scene fluorescent powder glue-line, fluorescent film or
Quantum dot QD (Quantum Dots) film.In the present embodiment, luminescent conversion layer includes fluorescent powder glue-line, fluorescent film or quantum
Point QD film;Inorganic fluorescent powder production can be used in fluorescent powder glue-line, fluorescent film, can be the inorganic fluorescent for being doped with rare earth element
Powder, wherein inorganic fluorescent powder is at least one of silicate, aluminate, phosphate, nitride, fluorination matter fluorescent powder.Fluorescence
Arogel layer can be fluorescent powder and glue are uniformly mixed after be formed by curing, glue can be using Photosetting glue
Body, photoresists etc..The production of fluorescent film can be first uniformly to mix fluorescent powder and glue forms fluorescent powder colloid later, then
Using printing technology by fluorescent powder colloid even print in support mode, finally from branch after heat drying or room temperature dry
It removes to be formed on hold mode tool.It should be understood that a kind of above-mentioned production method for only illustrating fluorescent powder glue-line, fluorescent film,
The production of the fluorescent powder glue-line, fluorescent film of the present embodiment is not limited in above-mentioned mode.
The production of quantum dot fluorescence powder can be used in quantum dot QD film;Quantum dot fluorescence powder be BaS, AgInS2, NaCl,
Fe2O3、In2O3、InAs、InN、InP、CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、GaAs、GaN、GaS、GaSe、
InGaAs、MgSe、MgS、MgTe、PbS、PbSe、PbTe、 Cd(SxSe1-x)、BaTiO3、PbZrO3、CsPbCl3、
At least one of CsPbBr3, CsPbI3.Quantum dot QD film can be quantum dot fluorescence powder and glue are uniformly mixed it is laggard
What row was formed by curing, glue can be using Photosetting colloid, photoresists etc..It should be understood that above-mentioned only illustrate
The production of a kind of production method of quantum dot QD film, the quantum dot QD film of the present embodiment is not limited in above-mentioned mode.
In the present embodiment, the set-up mode of reflective lens can also flexibly be set according to specific requirements on substrate.For example,
The corresponding reflective lens in lamp bead region all on substrate, all placement LED cores at this time namely on substrate can be set
The region of piece forms a big lamp bead region, and uses a reflective lens at this time.Base is also optionally set
The corresponding reflective lens in a lamp bead region on plate then finally exist at this time when having multiple lamp bead regions on substrate
The plurality of LEDs with reflective lens is formed on one substrate.A LED chip in lamp bead region is also optionally set
A corresponding reflective lens, can then regard as at this time finally form more single LED chips on substrate there are reflective lens
LED.
In order to make it easy to understand, the present embodiment with a specific topology example to the setting combinations of reflective lens into
Row illustrates.
Refer to shown in Fig. 7-1, it is assumed that be provided with three column LED chips 912 on substrate 911, each column LED chip by
Red LED chip, green LED chip and blue-light LED chip composition.In figure circuit layer, insulating layer or luminescent conversion glue-line or
The structures such as substratum transparent do not show that, it is only for illustrate that combination is arranged in lens convenient for simple.In Fig. 7-1 shown in X
The length direction of substrate, Y show the width direction of substrate;And assume to be divided on substrate by the direction of column in this example
The tri- lamp bead regions A1, A2, A3.
In a kind of example, all lamp bead regions on substrate share a reflective lens.For example, see Fig. 7-2 and
Shown in Fig. 7-3, wherein 7-2 is Fig. 7-1 provided with the cross-sectional view in width direction after reflective lens, and Fig. 7-3 is in Fig. 7-1
Provided with the cross-sectional view on length direction after reflective lens, from Fig. 7-2 and 7-3 it is found that lamp bead region A1, A2, A3 share one
One reflective lens 913 is set on substrate 911 in a reflective lens 913 namely the example.
A kind of corresponding reflective lens in a lamp bead region in example, on substrate.For example, see Fig. 7-4 and
Shown in Fig. 7-5, wherein 7-4 is Fig. 7-1 provided with the cross-sectional view in width direction after reflective lens, and Fig. 7-6 is in Fig. 7-1
Provided with the cross-sectional view on length direction after reflective lens, from Fig. 7-4 and 7-5 it is found that lamp bead region A1, A2, A3 are respectively right
One reflective lens 913 should be set, be provided with 3 reflective lens on substrate 911 at this time, this 3 reflective lens can
Think mutually independent lens, the lens module that can also be combined into one according to demand.
In a kind of example, the LED chip on substrate in lamp bead region is (it should be understood that the number can be flexible
Setting, herein only a kind of example) corresponding reflective lens.For example, see shown in Fig. 7-6 and Fig. 7-7, wherein 7-5
It is Fig. 7-1 provided with the cross-sectional view in width direction after reflective lens, Fig. 7-7 is that reflective lens are provided in Fig. 7-1
Cross-sectional view on length direction later, from Fig. 7-4 and 7-5 it is found that each LED chip respectively corresponds in lamp bead region A1, A2, A3
A reflective lens 913 are provided with, are provided with 9 reflective lens on substrate 911 at this time, this 9 reflective lens can
, can also be mutually indepedent with the lens module being combined into one, or by unit is classified as using three lens modules, each is thoroughly
Mirror mould group has in a column direction there are three lens.
It should be understood that the lens setting combination of above-mentioned example is only a kind of example, and according to concrete application
Scene can be used alone or in combination with flexible choice.
Embodiment two:
In order to make it easy to understand, the present embodiment combines several reflective lens exemplary constructions, further example is done to the present invention
Explanation.
It should be understood that reflective lens structure shown in the present embodiment is only used for illustrating thinking of the present invention
Exemplary construction, however it is not limited to structure in detail below.And it should be understood that the specific size of lens, material in the present embodiment
And it all can flexible choice with the combination of LED etc..
Reflective lens exemplified by the present embodiment include lens body, light incident surface, position positioned at lens body lower part
The LED chip of light-emitting face in lens body side and the light reflection surface LED positioned at lens body top transmitting light from
The light that the angle that light incident surface is injected between lens body, with LED chip optical axis is less than or equal to the first predetermined angle threshold value passes through
It is projected after reflective surface from the light-emitting face;And the angle between LED chip optical axis is greater than the first predetermined angle threshold value
Light generally directly from light-emitting face project.
It should be understood that the first predetermined angle threshold value is can flexibly to be set according to concrete application demand in the present embodiment
, such as can be set to 60 °, 59 °, 58 °, 55 °, 50 °, 40 ° etc., it can also be set greater than 60 ° of value according to demand.This reality
Apply in example claim LED chip transmitting light from light incident surface inject lens body, and the angle between LED chip optical axis be less than etc.
It is low-angle light in this some light of the first predetermined angle threshold value, the part light greater than the first predetermined angle threshold value is
High angle scattered light.
The optical axis of LED chip in the present embodiment, as soon as when LED chip is only arranged on substrate, then the optical axis herein
For the optical axis of the LED chip;When being provided with plurality of LEDs chip on substrate, then the hair that can be constituted jointly with plurality of LEDs chip
Optical axis of the optical axis of smooth surface as each LED chip.
It is not limited to the above example for the setting position of the light incident surfaces of lens, light reflection surface and light-emitting face position.
And it should be understood that in the present embodiment, light that LED is issued can also be with by being formed by light spot shape after lens
It is flexibly set according to concrete application scene, such as circular light spot can be formed as, lens at this time can also be round using being formed
The round lens of hot spot can also form square focus spot according to demand, and lens at this time can then use and form square focus spot
Square-lens;Can also be formed as the hot spot of other shapes according to demand, it is corresponding at this time to the corresponding planform of lens into
The corresponding adjustment of row.
In the present embodiment, the concrete shape of the generation type of the light incident surface of lens body lower part and light incident surface
It can flexibly set.For example, lens body bottom has the depression of an indent in a kind of example, the present embodiment is referred to as bottom
Depression, the inner wall of the bottom depression is as light incident surface, and the light of LED chip transmitting is incident upon in the depression of bottom, through light incidence
Face is injected in lens body.But it is to be understood that lens body bottom can also be not provided with depression, it is directly disposed as plane, with
The corresponding area surface of LED light incident area is then light incident surface.
In a kind of example of the present embodiment, light reflection surface is the inner wall of the top depression to concave at the top of lens body
Face, the light being incident upon in lens body are reflected in light reflection surface, and are projected from light-emitting face.Light-emitting face in the present embodiment
At least part being chosen as in the side of connection lens body bottom surface and top surface;And in order to further to being incident upon light
The shooting angle of light on exit facet is adjusted, and light-emitting face may also include to the multiple convex of lens body side outside extension
Face, further to adjust the shooting angle of light, so that light is more uniformly spread.
In order to make it easy to understand, several specific structures shown in reference to the accompanying drawing are done further example to the present invention and are said
It is bright.
It refers to shown in Fig. 8-1 to Fig. 8-5, wherein 90 be lens body, 901 be bottom depression, and 9011 is incident for light
Face, 902 be the light reflection surface in the depression of top, and 903 be light-emitting face, and 91 can be substrate, or for carrying LED's
Loading plate, 904 be stabilizer blade;Wherein 91 can be substrate 911 be (originally showing for luminous LED chip part of being arranged on substrate
Example be referred to as illumination region namely lamp bead region corresponding part), which may include luminescent conversion glue-line, in some instances its
Can not also have luminescent conversion glue-line.
In Fig. 8-1, the illumination region 911 on substrate 91 is set in bottom depression 901.In being inside bottom depression 901
Sky is also not precluded within inside bottom depression 901 in some instances certainly and fills corresponding medium.The inner wall of bottom depression 901
Face then constitutes light incident surface 9011, which can be using the benchmark optical axis of LED as axis center rotational symmetry;It certainly can also
It is set as dissymmetrical structure.Light reflection surface 902 also has with benchmark optical axis for axisymmetric curved surface.90 side of lens body is extremely
Few a part is light-emitting face 903, light-emitting face 903 on side specific distributing position and area size by light reflection surface,
The factors such as light incident surface and used lens material influence, therefore can flexibly be confirmed according to concrete application scene.
When work, the light that illumination region 911 emits is incident upon in bottom depression 901, and injects lens through light incident surface 9011
Low-angle light reflexes to light-emitting face 903 at reflecting surface 902 in ontology, projects lens body through light-emitting face 903
Outside.High angle scattered light directly projects outside lens body from light-emitting face 903.Wherein light path schematic diagram referring to shown in Fig. 8-5 namely
Lens change the direction from the LED light being emitted, i.e., by making light turn to the direction for being approximately perpendicular to LED benchmark optical axis,
To make light spread.
It refers to shown in Fig. 8-2 to Fig. 8-5, the reflective lens with cross section structure shown in Fig. 8-1 shown in the figure
A kind of product schematic diagram, when lens shown in Fig. 8-2 to Fig. 8-4 are arranged on LED, can pass through stabilizer blade in a kind of example
904 realize the fixation of lens with corresponding adhesive layer on substrate or loading plate or corresponding block button hole or other structures cooperation.But
It is, it should be appreciated that stabilizer blade 904 is not a necessary structure, can also be not provided with stabilizer blade 904.And it is a set by 904
Several and 904 specific structure etc. also all can flexibly change according to concrete application scene.It is reflective shown in Fig. 8-1 to 8-4
The hot spot schematic diagram that mirror issues is referring to shown in Fig. 8-5.
It refers to shown in Fig. 9-1 to Fig. 9-2, is then the reflective lens schematic diagram of another cross section structure shown in the figure.
Wherein 100 be lens body, and 1001 be light incident surface (can also be formed by the depression of lens body bottom), and 1002 reflect for light
Face (can also be formed) by the depression at the top of lens body, and 1003 be light-emitting face, and 101 be substrate, and 1011 be to be arranged on substrate
For luminous LED chip part (this example is referred to as illumination region).
In Fig. 9-1, the illumination region 1011 of the LED on substrate 101 is set in the depression of bottom.During bottom pocket interiors are
Sky is also not precluded within bottom pocket interiors in some instances certainly and fills corresponding medium.The inner wall of bottom depression then structure
At light incident surface 1001.At least part of 100 side of lens body is light-emitting face 1003, and light-emitting face 1003 is on side
Specific distributing position and area size are influenced by factors such as light reflection surface, light incident surface and used lens materials, because
This can flexibly set according to concrete application scene, such as it is all light-emitting face that entire side, which may be arranged, it is also possible to part side
Face is light-emitting face.
When work, it is incident upon in the depression of bottom referring to the light that shown in Fig. 9-2, the illumination region 1011 of LED emits, and enter through light
Face 1001 is penetrated to inject in lens body, then low-angle light reflexes to light-emitting face 1003 at light reflection surface 1002,
It is projected outside lens body through light-emitting face 1003, high angle scattered light directly projects outside lens body from light-emitting face 1003.Pass through
The reflective lens change the direction from the LED light being emitted, to make what LED launched uniformly to divide in broader range
Cloth.
It is the reflection of another cross section structure provided in this embodiment referring to Figure 1 shown in 0-1 to Figure 10-3, shown in the figure
Formula lens schematic diagram.Wherein 110 be lens body, and 1101 (can also pass through the depression shape of lens body bottom for light incident surface
At), 1102 be light reflection surface (can also be formed by the depression at the top of lens body), and 1103 be light-emitting face, and 111 be substrate,
1111 is are arranged for luminous LED chip part (this example is referred to as illumination region) on substrate, which may include shining
Glue-line is converted, it can not also have luminescent conversion glue-line in some instances.Lens body shown in Figure 10-1 to Figure 10-3
Having on light-emitting face 1103 includes the multiple convex surfaces extended on the outside of lens body side.
When work, it is incident upon in the depression of bottom referring to the light that shown in Figure 10-3, the illumination region 1111 of LED emits, and through light
The plane of incidence 1101 is injected in lens body, and light-emitting face 1103 is then reflexed at light reflection surface 1102, is emitted through light
It projects outside lens body in face 1103.By the reflective lens direction from the LED light being emitted is changed, so that LED be made to send out
That projects is uniformly distributed in broader range.
It is the reflection of another cross section structure provided in this embodiment referring to Figure 1 shown in 1-1 to Figure 11-4, shown in the figure
Formula lens schematic diagram.Wherein 120 be lens body, and 1201 be light incident surface, and 1202 (can also pass through lens body for light reflection surface
The depression at top is formed), 1203 be light-emitting face, and 1204 be stabilizer blade, and 121 be substrate, and 1211 are used to send out for what is be arranged on substrate
The LED chip part (this example is referred to as illumination region) of light, the part may include luminescent conversion glue-line, in some instances its
Can not have luminescent conversion glue-line.
When work, the light that the illumination region 1211 of LED emits is incident upon in the depression of bottom, and is injected through light incident surface 1201
In lens body, reflection setting light-emitting face 1203 then occurs at light reflection surface 1202, is projected through light-emitting face 1203
Mirror sheet is external.By the reflective lens direction from the LED light being emitted is changed, thus make that LED launches wider
Range be uniformly distributed.
As it can be seen that the LED component that the present embodiment combination LED and reflective lens obtain, can obtain in wider range
The light being more uniformly distributed.Therefore it can use the light source module that the LED component is made into back light unit, to be applied to various backlights
Application scenarios, to provide better visual effect and experience for user.
In addition, it is to be understood that in the various embodiments described above when lens are arranged on LED, it can under certain application scenarios
When the light non-uniform Distribution that LED can be needed to issue, then the structure of lens can be adjusted correspondingly.
Embodiment three:
In order to make it easy to understand, the present embodiment carries out further illustration to the structure for the LED that LED component uses.
What the present embodiment also provided utilizes LED made from the LED support in above-described embodiment comprising is set on substrate
An at least LED chip in lamp bead region.
In the present embodiment, LED may also include the luminescent conversion glue, lens glue-line or diffusion being set on LED chip
Glue-line, it should be appreciated that the luminescent conversion glue in the present embodiment can be the fluorescent glue comprising fluorescent powder, be also possible to include
The colloid of the photic material of quantum dot or other can realize the luminescent conversion glue of luminescent conversion, and also may include as needed
Spread powder or silicon powder etc.;Luminescent conversion glue, lens glue-line or the mode packet for spreading glue-line are formed in the present embodiment in LED chip
Include but be not limited to dispensing, molding, spraying, stickup etc..
For example, needing to be arranged in LED support the LED chip of four rows series connection in a kind of application scenarios, then again will
The LED chip that this four row is connected in series is in parallel again.For the application scenarios, the present embodiment provides a kind of LED branch of metal substrate
Frame framework, referring to shown in Figure 12-1 to Figure 12-2, being disposed with insulating layer 183 on the metal substrate 181 of the LED support, electricity
Road floor 182 and the white oil layer 187 being set on circuit layer 182, and metal substrate 181 have be exposed to 182 He of circuit layer
Crystal bonding area except white oil layer 187, white oil layer 187 do not cover pin welding section 1821, and 181 periphery of electrically-conductive backing plate is provided with box dam
1813.Structure in parallel again after the series connection that LED chip 180 in bracket passes through circuit layer four row LED chips 180 of realization,
Circuit layer i.e. at this time includes circuit in parallel again that four row LED chips are first connected.In a kind of application scenarios, it can will scheme
LED shown in 12-1 to be cut to obtain four LED lamp beads shown in dotted line frame in scheming, or according to shown in dotted line frame in metal
The division in 181 enterprising portable lighter pearl region of substrate, obtains four lamp bead regions, and setting four is concatenated in each lamp bead region
LED chip, the circuit realization provided between each lamp bead region by circuit layer are connected in parallel.And the division in lamp bead region can be flexible
It determines, such as can also vertically divide.
As it appears from the above, in the present embodiment, the number in the lamp bead region on substrate can flexibly be set, and each lamp bead region
Interior set LED chip number can also flexibly be set.Such as can be set includes at least two lamp bead regions, electricity on substrate
Road floor can also be set including realizing the circuit connected between each lamp bead region, and settable LED chip in a lamp bead region
At least two LED chips are set, include the pin welding section being connect with the LED chip in each lamp bead region on circuit layer.And it is optional
Ground, the LED support in the present embodiment can use box dam, can not also use box dam, specifically all can pattern actual demand it is flexible
Setting.For example, in a kind of example box dam can be used, and a box dam can be set in a lamp bead region at this time.
When multiple box dams being arranged on substrate, the LED chip in a box dam and the box dam, which is equivalent to, at this time utilizes existing LED
A LED made from bracket namely LED support provided in this embodiment can realize the multiple lamp beads of setting on one substrate,
And the connection that can be realized serial or parallel connection between multiple lamp bead by the circuit layer built in LED support or combine in series and parallel, phase
To existing LED support, further improve integrated level, and the mode that relatively existing more LED combinations use, reduce product at
This, reduces product size.
According to above-mentioned example it is found that in the present embodiment, set circuit layer is in addition to can be achieved between lamp bead on substrate
Connection and/or lamp bead and other devices connection, can also be achieved the connection in lamp bead region between each LED chip.
According to demand, the circuit layer in the present embodiment can be also configured in the entire front of substrate, or at least part
Extend the lamp bead region on substrate to lay the circuit connecting with other lamp beads and/or device, for example including but be not limited to
(driving circuit can be the driving circuit of driving LED chip to driving circuit, can also be entire circuit layer or the drive of other devices
Dynamic circuit), control the control circuit etc. of LED chip.
That is, in the present embodiment, circuit achieved by circuit layer, can also be according to specific other than above-mentioned example circuit
Application scenarios etc. are flexibly set, such as above-mentioned for controlling the control circuit of LED chip, for driving the driving electricity of LED chip
Road etc..In the present embodiment, above-mentioned control circuit and driving circuit can be only base required when realizing control and driving
Plinth route, without include realize control and driving needed for various electronic components (such as resistance, capacitor, various chips (such as
Driving chip)), the point that various components connect on these ground lines is the tie point of above-mentioned device.And in the present embodiment
Realize control or driving needed for various electronic components can be set on substrate front side according to demand, also can be set in
Substrate back, or be set to except substrate.Such as when circuit layer includes driving circuit, the driving of bare die form can be used
Chip, and the driving chip can be set to substrate back or front, it also can be realized driving chip and/or other yuan of device
Part is integrated into LED support.
As it can be seen that being laid in the present embodiment by the extension of above-mentioned route, in the case where LED support size meets, can incite somebody to action
At least part of driving circuit and/or control circuit is integrated on LED support, is further improved integrated level, is more conducively contracted
The size of small LED application module and assembly etc..Such as the control circuit in the present embodiment may include but be not limited to region adjustment
(local dimming) circuit.
In the present embodiment, it is provided with circuit layer on the substrate of LED support, therefore LED chip is set in LED support
When, can be can be arranged directly on LED chip on circuit layer according to specific requirements (includes at least one use on circuit layer at this time
In the chip rest area for placing LED chip, and lamp bead region may include at least one chip rest area), or by LED chip
Be set up directly on substrate (substrate includes at least one crystal bonding area being exposed to except circuit layer at this time), or circuit layer with
When being provided with insulating layer between substrate, it (includes at least one use on insulating layer that LED chip is set up directly on insulating layer at this time
In the chip rest area for placing LED chip).
For example, in some instances, when substrate substrate lower for thermal conductivity ratio, if circuit layer is neat with substrate front side
When putting down or being lower than basic front, and the thermal coefficient of material used by circuit layer is greater than or equal to the thermal coefficient of the substrate
When, LED chip can be set up directly on circuit layer, at least one can be set on circuit layer at this time for placing LED core
The chip rest area of piece, and a chip rest area can place one or more LED chips according to actual needs.In another example
If circuit layer is higher than substrate front side, in order to realize the quick export of the heat distributed to LED chip, substrate can be set
There is at least one to be exposed to for placing the crystal bonding area of LED chip except circuit layer in front, and such LED chip can directly be set
It sets on substrate, is in contact with substrate, the heat that LED is distributed can be directly delivered to substrate, be transmitted outward by substrate, with reality
Existing rapid cooling.And in the present embodiment, it can be mutually isolated, be also possible to mutually between the crystal bonding area of each LED chip
Connection, interconnected structure setting is then more conducive to the synthesis Quick diffusing of thermoelectricity.
In the present embodiment, when substrate is electrically-conductive backing plate, then insulation is necessarily provided between electrically-conductive backing plate and circuit layer
Layer, in a kind of example, and the insulating layer does not cover crystal bonding area, due to electrically-conductive backing plate while being metal substrate (such as electrically-conductive backing plate)
Thermal coefficient is generally bigger, therefore after LED chip is directly placed on the electrically-conductive backing plate, what which was distributed
Heat can then be distributed outward with prestissimo, various adverse effects caused by avoiding LED temperature excessively high.
In the present embodiment, when substrate be insulating substrate when, and circuit layer be higher than insulating substrate front when, directly general
LED chip is arranged on insulating substrate, opposite that LED is arranged on circuit layer, and the thermoelectricity that LED chip generates passes through circuit layer
The mode being transmitted on substrate, heat dissipation effect are more preferable.In the present embodiment, it in order to further enhance radiating efficiency, is insulating
In the crystal bonding area of substrate can also pre-buried thermal conductivity ratio insulating substrate thermal coefficient big heat carrier in advance, to pass through heat carrier
It promotes heat and distributes speed and efficiency.
In the present embodiment, circuit layer and bracket outer are attached or in order to realize convenient in circuit layer and bracket
Device or circuit layer in each module between connection, can flexibly substrate back side and/or face side setting and base
Plate is dielectrically separated from, and the function electrical connection area being electrically connected with the circuit layer on substrate.And set function electricity in the present embodiment
Bonding pad can be electrically connected the specific function to be realized in area with the position that circuit layer is specifically connect according to function and specifically determine.
In the present embodiment, the setting in function electrical connection area on LED support can flexibly be set.For example, can not
Function is drawn in substrate back side and is electrically connected area, and is arranged in substrate front side side and is electrically connected area with the function that substrate is dielectrically separated from
(area of function electrical connection at this time may be directly disposed on substrate, it is also possible to be located on circuit layer), or according to demand in substrate
Function electrical connection area is arranged in the back side and front simultaneously.It in the present embodiment, can when in substrate front side side, setting function is electrically connected area
It is referred to as the first function electrical connection area to be set to the function electrical connection area of substrate front side side, and the tie point of other devices can also be set
It is placed in first function electrical connection area;When setting function is electrically connected area in substrate back side, the function of substrate back can be claimed
Being electrically connected area is that the second function is electrically connected area, and according to demand, the tie point of other devices can also be electrically connected with second function
Area's connection.In the present embodiment, function electrical connection area for the interface of external connection be referred to as electrical connection interface (as it appears from the above,
May be the tie point of other devices), electrical connection interface may be configured as the jointing holes that are electrically connected, PIN foot terminal, golden finger or pad knot
Interface of structure etc..
In the present embodiment, when basic back side is arranged the second function and is electrically connected area, the second function of substrate back setting
The position that electrical connection area is specifically connect with circuit layer can be specific according to the specific function to be realized in the second function electrical connection area
It determines.And in the present embodiment, the second function of back side electricity is realized in the path that the back side can be then arrived along substrate front side to side
The connection of bonding pad and circuit layer directly rearwardly can also open up through-hole from substrate front side, pass through setting and circuit in through-hole
The electric conductor that the corresponding position of floor is electrically connected realizes the setting in the second function electrical connection area.
It should be understood that in the present embodiment, being electrically connected when the first function is respectively set simultaneously in substrate front side and the back side
When meeting area and the second function electrical connection area, the corresponding realization in set the first function electrical connection area and the second function electrical connection area
Function may be the same or different, be also possible to the first function electrical connection area and the second function electrical connection area cooperation realize
A kind of function.Such as first function electrical connection area include bracket positive electrode bonding pad and bracket negative electrode bonding pad;Second function
Electrical connection area includes the device bonding pad for connecting with the device outside LED support.In another example the first function is electrically connected Qu Weizhi
Frame positive electrode bonding pad, it is bracket negative electrode bonding pad that the second function, which is electrically connected area, and LED support and external electrical are realized in the two cooperation
The connection in source;In another example the first function electrical connection area includes bracket positive electrode bonding pad and bracket negative electrode bonding pad, the second function
It includes that bracket positive electrode bonding pad and bracket negative electrode bonding pad in actual use can be according to current that area, which can be electrically connected, also
Application scenarios flexibly select the bracket positive electrode bonding pad of substrate front side or the back side and bracket negative electrode bonding pad carry out using.
In the present embodiment, it for reliability, the light extraction efficiency etc. that promote LED support, optionally, can also be set on substrate
On the circuit layer set, at least one of protective layer and the coat of metal are set, and the protective layer in the present embodiment includes but unlimited
In at least one of protective coating and insulating protective film;The setting of the coat of metal can also be convenient for device company in the present embodiment
Make contact when connecing.
For example, various protective coatings can be arranged on circuit layer, it should be appreciated that the protective coating does not cover circuit
Welding section on layer, which can play the role of protecting circuit layer, and may also function as according to actual needs
The effects of circuit structure on circuit layer is identified, and/or promotes LED support light extraction efficiency.For example, in the present embodiment
Protective coating can be set to anti-solder ink coating, which may include in white oil layer, green oil layer and dirty oil layer
At least one.Such as white oil layer can be set in some regions, some region setting green oil layers or the setting of some regions are white
Dirty oil layer is arranged in oil reservoir, some regions, or white oil layer, green oil layer or dirty oil layer is only arranged, or even multilayer is arranged according to demand
Ink layer etc..The ink layer and specific combination etc. for being specifically chosen which type all can flexibly be set.Dirty oil layer is set
It sets and part light can be absorbed, the light finally launched can be adjusted again.In another example can be arranged on circuit layer
Various insulating protective films (namely being protected by way of overlay film), the insulating protective film in the present embodiment can be using insulation
Reflective membrane, for example including but be not limited to reflective flexible membrane, to promote the light emission rate of LED support.Reflective flexible membrane in the present embodiment
It also should not welding section on circuit layer.And it should be understood that insulating protective layer and protective coating can also be tied in a kind of example
Setting is closed, such as protective coating can be first set on circuit layer, then insulating protective layer is set in protective coating.In this implementation
, can also be using the coat of metal be directly arranged on circuit layer in example, which can be single metal layer, can also be for by extremely
The composite-layer metal layer of few two kinds of metal layers composition;For example, single metal layer when, can be single layer silver coating;For complex metal layer
When, it can be the composite-layer metal layer being made of silver layer and layer gold or other metal layers.
The present embodiment also provides light emitting device a kind of, which includes LED exemplified by above-described embodiment.This
Light emitting device in embodiment can be lighting device, optical signal instruction device, light compensating apparatus or back lighting device etc..For lighting device
When, it is specifically as follows the lighting device applied to various fields, such as desk lamp, fluorescent lamp, ceiling lamp, cylinder in daily life
Lamp, street lamp, projecting lamp etc., in another example high beam, dipped headlight, atmosphere lamp etc. in automobile, in another example operating lamp in medical,
The headlamp of low electromagnetism headlamp, various medical apparatus, in another example answering the various color lamps in furnishing fields illumination, Landscape Lighting
Lamp, advertising lamp etc.;When for optical signal instruction device, it is specifically as follows the optical signal instruction device applied to various fields, example
Various signal condition indicator lamps such as the signal lamp of field of traffic, in the communications field on communication equipment;When for light compensating apparatus,
It can be the light compensating lamp of photography, such as flash lamp, light compensating lamp, or agriculture field is the plant light compensation of plant light compensation
Lamp etc.;It can be the backlight module applied to various field of backlights, such as can be applied to display, TV when for back lighting device
In the equipment such as the mobile terminals such as machine, mobile phone, advertisement machine.
It should be understood that above-mentioned application is only several applications exemplified by the present embodiment, it should be appreciated that LED device
Application several fields that it is not limited to the above example of part.
The above content is combining specific embodiment to be further described to made by the embodiment of the present invention, cannot recognize
Fixed specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs,
Without departing from the inventive concept of the premise, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to the present invention
Protection scope.
Claims (16)
1. a kind of luminescent device, which is characterized in that including LED and after LED encapsulation is completed, be arranged on the LED
Reflective lens, the LED includes substrate, the circuit layer being dielectrically separated from the substrate front side and with the substrate
And an at least LED chip, lamp bead region is equipped on the substrate front side, the LED chip is set to the lamp bead area
In domain, the circuit layer include for by the lamp bead region on the substrate LED chip and other lamp beads and/or the base
The circuit of the tie point connection of other devices on plate;
The reflective lens are located on the substrate, and the reflective lens include lens body, are located at the lens sheet
The light incident surface of body lower part, the light positioned at the light-emitting face of the lens body side and positioned at the lens body top are anti-
Face is penetrated, the light of the LED chip transmitting injects the lens body from the light incident surface, between the LED chip optical axis
Angle be less than or equal to the first predetermined angle threshold value light after the reflective surface from the light-emitting face project.
2. luminescent device as described in claim 1, which is characterized in that the light incident surface be from the lens body bottom to
The light of the inner wall of the bottom depression of indent, the LED chip transmitting is incident upon in the bottom depression, through the bottom depression
Inner wall inject the lens body;
The light reflection surface is the inner wall of the top depression to concave at the top of the lens body, is incident upon the lens body
The light that interior and between the optical axis angle is less than or equal to first predetermined angle threshold value occurs in the light reflection surface
Reflection, and projected from the light-emitting face.
3. luminescent device as claimed in claim 2, which is characterized in that the light-emitting face includes to the lens body side
Multiple convex surfaces that outside extends.
4. luminescent device as described in any one of claims 1-3, which is characterized in that be provided with one in the lamp bead region
LED chip, or be provided at least two spacing and be less than default first distance threshold value to form the plurality of LEDs chip of point light source, or
It is provided with more spacing and is greater than default second distance threshold value to form the plurality of LEDs chip of area source.
5. luminescent device as claimed in claim 4, which is characterized in that the corresponding institute in all lamp bead regions on the substrate
State the corresponding reflective lens in the lamp bead region or the lamp bead on reflective lens or the substrate
The corresponding reflective lens of a LED chip in region.
6. luminescent device as claimed in claim 5, which is characterized in that when being provided with plurality of LEDs chip in the lamp bead region,
It include the LED chip of at least two different peak luminous wavelengths in the plurality of LEDs chip.
7. luminescent device as described in any one of claims 1-3, which is characterized in that the LED further includes being set to the LED
Luminescent conversion layer, substratum transparent or diffusion glue-line between chip and the reflective lens.
8. luminescent device as claimed in claim 7, which is characterized in that the LED include be set to the LED chip with it is described
Luminescent conversion layer between refraction type lens, the LED chip in the lamp bead region include in following chip any one or
At least two combination:
Peak luminous wavelength is the blue-light LED chip of 440nm to 500nm;
Peak luminous wavelength is the green LED chip of 510nm to 540nm;
Peak luminous wavelength is the yellow light LED chip of 550nm to 570nm;
Peak luminous wavelength is the red LED chip of 620nm or more;
The luminescent conversion layer is that the light that the LED chip issues is converted into default colour mixture light luminescent conversion layer.
9. luminescent device as claimed in claim 8, which is characterized in that the default colour mixture light includes white light.
10. luminescent device as described in any one of claims 1-3, which is characterized in that the reflective lens are to form circle
The round reflective lens of hot spot, the rectangular reflective lens for forming square focus spot or the ellipse for forming ellipse are reflective
Mirror.
11. luminescent device as described in any one of claims 1-3, which is characterized in that the substrate front side is additionally provided with and base
Plate is dielectrically separated from itself, and the first function electrical connection area being electrically connected with the circuit layer, and/or, the substrate back setting
The the second function electrical connection area for having and being dielectrically separated from substrate, and be electrically connected with the circuit layer.
12. luminescent device as described in any one of claims 1-3, which is characterized in that the circuit layer further includes driving circuit
And/or the control circuit for being controlled LED chip.
13. luminescent device as described in any one of claims 1-3, which is characterized in that include at least two lamps on the substrate
Pearl region, the circuit layer include and the positive pin of LED chip to be placed in each lamp bead region and negative pin point
Not corresponding positive pin welding section and negative pin welding section, and at least two lamp bead region is electrically connected
Circuit.
14. luminescent device as described in any one of claims 1-3, which is characterized in that have a lamp bead area on the substrate
Domain, the circuit layer include respectively corresponding with the positive pin of LED chip to be placed in the lamp bead region and negative pin
Positive pin welding section and negative pin welding section;
For placing a LED chip or at least two LED chips in the lamp bead region.
15. luminescent device as described in any one of claims 1-3, which is characterized in that set at least one described lamp bead region
At least two LED chips are equipped with, the circuit layer further includes realizing that the chip being electrically connected between each LED chip in lamp bead region connects
Connect circuit;Circuit is connected by the chip between at least two LED chips and realizes connection.
16. a kind of light emitting device, which is characterized in that including such as described in any item luminescent devices of claim 1-15, the hair
Electro-optical device is lighting device, optical signal instruction device, light compensating apparatus or back lighting device.
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