CN110460787A - A monolithic active pixel detector and method thereof - Google Patents

Abstract

The present invention relates to a single-chip active pixel detector and its method, which includes a pixel circuit, and a column readout circuit is located between two column pixel circuits; the digitized energy amplitude information and the hit signal output by the column readout circuit are transmitted to In the column ADC, the particle concentrated position information and hit signal output by the column readout circuit are transmitted to the top layer readout circuit; the row and column selection signal and the Strobe signal output by the pixel configuration and readout control circuit are transmitted to the pixel circuit, and the generated chip The data flag bit, the Readout Start signal is transmitted to the top-level readout circuit; the column ADC and its bias circuit are used to detect the particle energy amplitude; the top-level readout circuit receives the particle hit position information output by the column readout circuit, and the output of the column ADC. The energy amplitude information and the data flag corresponding to the same data frame complete the data frame packaging, and output to the outside of MAPS through the serial data link, so as to realize the simultaneous detection of particle hitting position and energy amplitude. The invention has the advantages of high resolution, high charge collection efficiency, high filling factor, high sensitivity, low power consumption and the like.

Description

A monolithic active pixel detector and method thereof

technical field

The invention relates to the design field of semiconductor integrated circuits, in particular to a single-chip active pixel detector with track detection and energy amplitude ΔE detection capabilities and a method thereof.

Background technique

At present, there are a large number of different types of particles with different energy amplitudes in applications such as high-energy physics experiments, space particle detection, and intelligent digital medical care. If you want to accurately measure the energy spectrum of these particles, identify element types, and explore their flux The characteristics and their changes, and the study of major fundamental physical issues such as the origin of cosmic elements require a monolithic active pixel detector (Monolitich Active Pixel Sensor, MAPS) chip with both track detection and energy amplitude ΔE detection capabilities. At present, for such applications in the world, the high-speed ADC (Analog to Digital Converter) outside the track detection chip is used to digitize the analog output of the pixel, and the digitized data is processed in the subsequent readout electronics. However, due to the large number of pixels in MAPS, a single chip contains about 130,000 pixels, even with 8 analog outputs, the maximum readout can only reach the order of 1kHz, which limits the amplitude readout rate of the system. At the same time, using an off-chip ADC for digitization will reduce the integration level of the system and increase system noise.

Contents of the invention

In view of the above problems, the object of the present invention is to provide a single-chip active pixel detector and its method capable of both track detection and energy amplitude ΔE detection, which can realize track detection and energy amplitude ΔE detection at the same time. It has the advantages of low power consumption, high spatial resolution, high sensitivity, low hardware overhead, high-speed track detection and energy amplitude ΔE readout.

In order to achieve the above object, the present invention adopts the following technical solutions: a single-chip active pixel detector, which includes a pixel circuit, a column readout circuit, a column ADC and its bias circuit, a pixel configuration and a readout control circuit, and a top layer readout circuit. output circuit; the pixel circuits are set to several, and are divided into 2M columns, M is an integer, the column readout circuits are set to M, and the M column readout circuits and several pixel circuits form a pixel array of ^2N rows×2M columns , N is an integer; the input end of each column readout circuit is connected to two columns of pixel circuits, and is located between the two columns of pixel circuits; the digitized energy amplitude output by each column readout circuit The ΔE information and the hit signal are all transmitted to one of the column ADCs, and the particle concentration position information and the hit signal output by each column readout circuit are transmitted to the top layer readout circuit; the pixel configuration and readout The row selection signal, column selection signal and Strobe signal output by the control circuit are all transmitted to each of the pixel circuits, and the pixel configuration and readout control circuit generates chip data flags Chip Data Header and Chip Data Trailer, and outputs The ReadoutStart signal is transmitted to the top-level readout circuit; the column ADC and its bias circuit are used to detect the particle energy amplitude ΔE to realize the digital output of the energy analog signal; the top-level readout circuit receives the column readout The particle hit position information output by the circuit, the energy amplitude ΔE information output by the column ADC, and the data flag corresponding to the same data frame complete the data frame packaging and output to the outside of MAPS through the serial output link to realize simultaneous detection of particle hit Mid-position and energy magnitude ΔE.

Further, each of the pixel circuits includes a PMOS reset circuit, a charge collection diode, a test capacitor, an amplifier circuit, a comparator with adjustable upper and lower thresholds, a source follower circuit, a hit register and an analog buffer; wherein, the The comparator and the hit register form a digital path, and the source follower circuit and the analog buffer form an analog path; after the particles are incident on the pixel circuit, the charges of the particles are collected by the charge collection diode to generate carriers, Form an output current to change the node voltage V_PIX between the test capacitor and the charge collection diode to obtain a node voltage change value ΔV_PIX; the collected particle energy amplitude ΔE in the charge is stored in the PMOS reset circuit, and After the energy amplitude ΔE is output, the node voltage V_PIX after being bombarded by particles is restored; the node voltage change value ΔV_PIX is processed by the amplifier circuit and output voltage signal A_PIX, which is transmitted to the digital channel and the analog channel respectively.

Further, in the digital path, the voltage signal A_PIX passes through the comparator with adjustable upper and lower thresholds to judge whether a pixel is hit by a particle, and outputs a status signal to the hit register, and the hit register stores the The status signal output by the comparator, and the status signal is transmitted to the column readout circuit by the hit register; the RESET signal and the Strobe signal generated by the pixel configuration and readout control circuit are transmitted to the hit register , the RESET signal is used to reset the hit register, and the Strobe signal stores the output signal of the comparator in the hit register.

Further, if the signal A_PIX is between the upper and lower thresholds, it outputs a low level to indicate that the pixel is hit by a particle, and the STATE signal output by the comparator is a high level, otherwise it is a low level.

Further, the hit register has three working modes: normal mode, masking and testing.

Further, in the normal mode, the hit register is controlled by the Strobe signal to store the output of the comparator to represent hit information.

Further, in the shielding mode, the STATE output is at a constant low level, thereby shielding the hit information of the pixel.

Further, the test mode includes two kinds of digital pulse and analog pulse test, the digital pulse test is when the test voltage is high level, without considering the output of the front-end signal of the analog path, STATE is set to high level; the analog pulse test is The test voltage is tested by injecting test charge into the input node V_PIX through the test capacitor.

Further, in the analog channel, after passing through the source follower circuit, the signal A_PIX is output to the column ADC through the analog buffer under the control of the row and column selection signal output by the pixel configuration and readout control circuit, After being digitized by the ADC of the column, it is output.

A single-chip active pixel detection method of the above-mentioned detector, which includes the following steps: 1) Pixel configuration and readout control circuit generate effective Strobe signal, and simultaneously output Readout Start signal to control the top-level readout circuit to start particle hit position Information and energy information are read out. During this time, particles bombard the pixel circuit to generate a large amount of charge, which is amplified and compared by the front-end circuit of the analog channel to obtain the hit information. The hit information is locked in the hit register by the Strobe signal control, and the output The STATE signal is sent to the column readout circuit; 2) The column readout circuit receives the STATE signal, generates a Valid signal and outputs it to the top-level readout circuit, and the top-level readout circuit controls the operation of the encoding circuit in it, and sequentially outputs the hits according to the encoding sequence The particle hit position information of the pixel is stored in the top-level readout circuit; 3) the Valid signal controls the column ADC to turn on at the same time, and the pixel configuration and readout control circuit decodes the particle hit position information of the pixel hit, and the obtained Row selection signal Row_select and column selection signal Col_select; 4) The voltage stored in the middle node of the front-end circuit of the analog path is controlled by the row selection signal Row_select and the column selection signal Col_select, and is output to the cyclic algorithm column ADC through the source follower circuit for analog-to-digital conversion. After the amount is sampled by the column ADC, the row selection and column selection signals will be turned off, and the PMOS reset circuit will be turned on to reset the input node voltage, waiting for the next particle bombardment; 5) The column ADC will output the particle energy amplitude ΔE information to the top read The output circuit corresponds to the particle hit position information of the hit pixel, and realizes the detection of the particle hit position and the energy amplitude ΔE at the same time; the top readout circuit packs the particle hit position and the energy amplitude ΔE into a data frame, It is transmitted to the outside of MAPS through a serial output link; 6) After the same Strobe signal controls the output of the stored hitting particle hitting position information and energy amplitude ΔE, the top-level readout circuit returns the Readout Done signal to the pixel configuration and readout control circuit , the Strobe signal becomes invalid this time, it can be configured to generate the next Strobe signal, and repeat the above steps 1) to 5).

Because the present invention adopts the above technical scheme, it has the following advantages: 1. The structure of the monolithic active pixel detector (MAPS) of the present invention has track detection and energy amplitude ΔE detection capabilities simultaneously, and the pixel unit has high resolution, high Charge collection efficiency, 100% fill factor, etc., can realize low power consumption, high sensitivity voltage amplification and comparison function, can save the energy amplitude ΔE signal analog quantity waiting for digital output, and realize the reset controllable of the charge sensitive node. 2. The track readout circuit of the present invention has the characteristics of high speed and low power consumption. According to the track information of the hit pixel, the corresponding analog signal is output to the pixel row cycle algorithm ADC for digital output of the energy amplitude ΔE. 3. The ADC of the pixel row cycle algorithm of the present invention has lower requirements on the chip area, and can obtain a relatively high working speed under the same power consumption and hardware consumption. 4. The pixel column ADC of the present invention combines the input signal sampling period with the conversion period, reduces the conversion delay, and then improves the conversion speed. At the same time, the ADC adopts a single-cycle 1.5-bit output quantization structure and a digital correction module, which can effectively solve the problem. Amplifier misalignment problem. Compared with the traditional mainstream scheme of using an external ADC chip, it has a higher energy amplitude ΔE readout rate.

In summary, the present invention has broad application prospects in the fields of space science engineering and basic physics research, and provides an accurate and efficient method and means for the detection and identification of particles in related fields such as high-energy physics and space detection .

Description of drawings

Fig. 1 is the MAPS block diagram of the present invention;

2 is a schematic structural diagram of a pixel circuit of the present invention;

Fig. 3 is a timing diagram of MAPS of the present invention.

Detailed ways

The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

As shown in Figure 1, the present invention provides a monolithic active pixel detector with track detection and energy amplitude ΔE detection capabilities, which includes a pixel circuit, a column readout circuit, a column ADC and its bias circuit, Pixel configuration and readout control circuit and top layer readout circuit.

The number of pixel circuits is set to be several, and divided into 2M columns, M is an integer, and the number of column readout circuits is set to M, and the M column readout circuits and several pixel circuits form a pixel array of 2 ^N rows×2M columns, and N is an integer; The input end of each column readout circuit is connected to two columns of pixel circuits, and is located between the two columns of pixel circuits. The digitized energy amplitude ΔE information and the hit signal Valid output by each column readout circuit are transmitted to a column ADC, and the particle concentration position information (N-bit hit position code TRACK) and hit position information output by each column readout circuit The signal Valid is passed to the top-level readout circuitry. The row selection signal Row_select, column selection signal Col_select and Strobe signal output by the pixel configuration and readout control circuit are all transmitted to each pixel circuit in the pixel array, and the pixel configuration and readout control circuit will generate the chip data flag Chip Data Header and ChipDataTrailer, and the output Readout Start signal is transmitted to the top-level readout circuit. The column ADC and its bias circuit are used to detect the particle energy amplitude ΔE, and realize the digital output of the energy analog signal. The top-level readout circuit receives the particle hit position information output by the column readout circuit, the energy amplitude ΔE information output by the column ADC, and the data flag corresponding to the same data frame, etc., completes the data frame packaging, and outputs it through the serial output link To the outside of MAPS, and then realize the simultaneous detection of particle hit position and energy amplitude ΔE.

In the above embodiment, as shown in FIG. 2, each pixel circuit includes a PMOS reset circuit, a charge collection diode, a test capacitor C_test, an amplifier circuit, a comparator with adjustable upper and lower thresholds, a source follower circuit, a hit register and an analog Buffer (buffer); wherein, the comparator and the hit register form the digital path, and the source follower circuit and the analog buffer form the analog path. After the particles are incident on the pixel circuit, the charges of the particles are collected by the charge collection diode to generate carriers to form an output current, which changes the node voltage V_PIX between the test capacitor C_test and the charge collection diode to obtain the node voltage change value ΔV_PIX; The final particle energy amplitude ΔE in the charge is saved to the PMOS reset circuit, and the node voltage V_PIX after being bombarded by the particles is restored after the energy amplitude ΔE is output. The node voltage change value ΔV_PIX is processed by the amplifier circuit to output a voltage signal A_PIX, which is transmitted to the digital channel and the analog channel respectively. In the digital channel, the voltage signal A_PIX judges whether the pixel is hit by a particle through a comparator with adjustable upper and lower thresholds, and outputs a state (STATE) signal to the hit register, and the hit register stores the state signal output by the comparator, and The state signal is transmitted to the column readout circuit by the hit register; if A_PIX is between the upper and lower thresholds, the output low level indicates that the pixel is hit by the particle, and the STATE signal output by the comparator is high level, otherwise it is low level flat. The RESET signal and the Strobe signal generated by the pixel configuration and readout control circuit are transmitted to the hit register, the RESET signal is used to reset the hit register, and the Strobe signal stores the output signal of the comparator in the hit register. The hit register has three working modes: normal mode, MASK (masking) and PULSE (testing). In the normal mode, the hit register is controlled by the Strobe signal to control the storage of the output of the comparator to represent the hit information; in the MASK mode, the STATE output is a constant low level, thereby shielding the hit information of the pixel; the PULSE mode includes digital pulse and analog pulse testing Two, digital pulse test is when the test voltage V_test is high level, no need to consider the output of the front-end signal of the analog channel, STATE is set to high level, and the analog pulse test is to test the voltage V_test to the input node V_PIX through the test capacitor C_test Inject a test charge for testing. In the analog channel, the signal A_PIX is output to the column ADC through the analog buffer under the control of the row and column selection signals col_select and row_select output by the pixel configuration and readout control circuit after passing through the source follower circuit, and then output after digital processing by the column ADC.

Based on the above-mentioned detector, the present invention also provides a single-chip active pixel detection method with both track detection and energy amplitude ΔE detection capabilities, as shown in Figure 3, which includes the following steps:

1) The pixel configuration and readout control circuit generates an effective Strobe signal, and at the same time outputs the Readout Start signal to control the top-level readout circuit to start reading out the particle hitting position information and energy information. During this time, the particle bombards the pixel circuit to generate a large amount of charge , through the amplification and comparison of the front-end circuit of the analog channel, the hit information is obtained, and the hit information is locked in the hit register by the Strobe signal control, and the STATE signal is output to the column readout circuit;

2) The column readout circuit receives the STATE signal, generates a Valid signal and outputs it to the top-level readout circuit, and the top-level readout circuit controls the operation of the coding circuit inside it, and outputs the particle hit position information of the hit pixel in sequence according to the coding sequence, This information is stored in the top-level readout circuitry.

3) The Valid signal controls the column ADC to be turned on at the same time, and the pixel configuration and readout control circuit decodes the hit position information of the particle hitting the pixel to obtain the row selection signal Row_select and the column selection signal Col_select;

4) The voltage stored in the middle node of the front-end circuit of the analog path is controlled by the row selection signal Row_select and the column selection signal Col_select, and is output to the loop algorithm column ADC through the source follower circuit for analog-to-digital conversion. After the analog quantity is sampled by the column ADC, the row will be turned off Select and select signals, and turn on the PMOS reset circuit to reset the input node voltage, waiting for the next particle bombardment.

5) The column ADC outputs the particle energy amplitude ΔE information to the top-level readout circuit, and corresponds to the particle hitting position information of the hitting pixel, and realizes particle hitting position detection and energy amplitude ΔE detection at the same time. The top-level circuit packs the hit position and energy amplitude ΔE information into a data frame, which is output to the outside of MAPS through a serial output link.

6) After the same Strobe signal controls the output of the stored hitting particle’s hitting position information and energy amplitude ΔE, the top-level readout circuit returns the Readout Done signal to the pixel configuration and readout control circuit. This time, the Strobe signal becomes invalid and can be configured to generate For the next Strobe signal, repeat the above steps 1) to 5).

Example:

The pixel circuit is used to collect the charge generated by the particle bombardment, and compare the ΔE information of the particle energy amplitude ΔE saved after amplification with the external adjustable threshold value to generate the hit information and store it in the hit memory, and the output is connected to the column readout circuit for particle The hit position information output and the energy amplitude ΔE are simultaneously connected to the column ADC for digital output. When particles are incident on the pixel circuit, the generated electron-hole pairs are depleted and collected by the charge collection diode, which reduces the input voltage of the front-end circuit of the analog channel by tens of millivolts. In the analog path front-end circuit, the voltage of the input node is amplified and passed to the intermediate node, which will increase the voltage of the intermediate node by several hundred millivolts. The particle energy amplitude ΔE information is controlled by the row selection signal Row_select and the column selection signal Col_select, and is output to the column ADC for analog-to-digital conversion through the source follower circuit. After the analog quantity is sampled by the column ADC, the row and column selection signal will be turned off, and the PMOS reset will be turned on The circuit resets the input node voltage. If the charge generated by the particle bombardment is large enough to overcome the externally set current value, the output hit signal becomes low level and lasts for about 1-3us. The output hit signal is connected to the hit register, and the register is written in under the control of the Strobe signal output by the pixel configuration and readout control circuit, and the hit information is stored in the hit register for output to the column readout circuit.

The column readout circuit is used to output particle hit position information to the top layer readout circuit, the input of the column readout circuit is connected to the output hit signal of the pixel circuit, and the output particle hit position information is connected to the top layer readout circuit. Only when pixels in the pixel circuits on both sides of the column readout circuit are hit, the column readout circuit will work, and output the hit signal Valid to the top layer readout circuit. The output particle hit position information is controlled by the top-level readout circuit. If multiple pixel units are hit at the same time, the particle hit position information of the pixels will be output in sequence according to the coding sequence. The output pixel status register is reset, and the unoutput pixel lock The information in storage is waiting to be read out.

The input end of the column ADC and its bias circuit is connected to the output end of the source follower circuit in the pixel circuit, and the energy amplitude ΔE information output by the column ADC and its bias circuit is transmitted to the top readout circuit, which is related to the particle hitting position information. Corresponding, so as to realize particle hit position detection and energy amplitude ΔE detection at the same time; and the hit signal Valid control column ADC is started, and the output pixel particle hit position information is decoded by pixel configuration and readout control circuit to obtain the corresponding The row selection signal Row_select and the column selection signal Col_select control the output of the analog signal stored in the intermediate node after the voltage amplifying circuit to the column ADC of the loop algorithm. The column ADC converts the particle energy amplitude ΔE analog value into a digital value, and then outputs it to the top-level readout circuit, corresponding to the particle hitting position information. The top-level readout circuit packs the particle hitting position information and the digitized energy amplitude ΔE into a data frame, and outputs it to the outside of MAPS through a serial link.

The pixel configuration and readout control circuit configures different working modes of the pixel circuit: the pixel configuration and readout control circuit generates the chip data flags Chip Data Header and Chip Data Trailer and transmits them to the top layer readout circuit, and generates a Strobe signal and transmits it to the pixel circuit , used to latch the particle bombardment information, and at the same time generate the Readout Start signal to control the top-level readout circuit to start reading the particle hit position information and energy amplitude ΔE. After the particle hit position information and energy amplitude ΔE readout, Input the ReadoutDone signal, the Strobe signal is invalid this time, and it can be configured to generate the next Strobe signal.

In summary, the present invention has the advantages of high resolution, high charge collection efficiency, high fill factor, high sensitivity, low power consumption, and low hardware consumption.

The above-mentioned embodiments are only used to illustrate the present invention, and the structure, size, location and shape of each component can be changed. On the basis of the technical solution of the present invention, all improvements to individual components according to the principles of the present invention and equivalent transformations shall not be excluded from the protection scope of the present invention.

Claims (10)

1. a kind of monolithic active pixel detector, it is characterised in that: including pixel circuit, row reading circuit, column ADC and its biasing Circuit, pixel configuration and read-out control circuit and top layer reading circuit；

The pixel circuit is set as several, and is divided into 2M column, and M is integer, and row reading circuit is set as M, and M column are read Circuit and several pixel circuits constitute 2^NThe pixel array of row × 2M column, N is integer；The input terminal of each row reading circuit It connect, is located between the two column pixel circuits with the two column pixel circuits；The number of each row reading circuit output It word energy magnitude Δ E information and hits signal and is transmitted in a column ADC, the grain that each row reading circuit exports It location information and hits signal in subset and is transmitted to the top layer reading circuit；The pixel configuration and read-out control circuit output Row selection signal, array selecting signal and Strobe signal be transmitted in each pixel circuit, the pixel configuration and reading Control circuit is by chip data flag bit Chip Data Header and Chip the Data Trailer of generation out, and exports Readout Start signal be transmitted to the top layer reading circuit；The column ADC and its biasing circuit are used for particle detection energy Amplitude Δ E is measured, realizes the Digital output of Energy Simulation signal；The top layer reading circuit receives the row reading circuit output Particle hit location information, column ADC output energy magnitude Δ E information and the corresponding Data Labels position of same data frame, It completes data frame to be packaged, and is exported by serial output link to MAPS, realize that particle detection hits position and energy simultaneously Measure amplitude Δ E.

2. detector as described in claim 1, it is characterised in that: each pixel circuit includes PMOS reset circuit, electricity Lotus collection diode, testing capacitor, amplifying circuit, the comparator with adjustable upper lower threshold value, source follow circuit, hit register And analogue buffer；Wherein, it by the comparator and hits register and constitutes digital channel, circuit and simulation are followed by the source Buffer constitutes analog channel；After particle is incident on the pixel circuit, by the charge of the charge collection diode pair particle It is collected generation carrier, output electric current is formed, makes the node between the testing capacitor and the charge collection diode Voltage V_PIX generates variation and obtains node voltage changing value Δ V_PIX；Particle energy amplitude Δ E is saved in charge after collection The extremely PMOS reset circuit, and restore after energy magnitude Δ E output by the node voltage V_PIX after particle bombardment；It is described Node voltage changing value Δ V_PIX output voltage signal A_PIX after amplifying circuit processing, is transmitted separately to the number Access and analog channel.

3. detector as claimed in claim 2, it is characterised in that: in the digital channel, voltage signal A_PIX is by having The comparator of adjustable upper lower threshold value judges whether pixel is hit by particle, and output status signal hits deposit to described Device, by the status signal for hitting register and storing the comparator output, and by the register that hits by status signal It is transmitted to the row reading circuit；

The RESET signal and Strobe signal that the pixel configuration and read-out control circuit generate hit deposit described in being transmitted to Device, RESET signal hit register for resetting this, and the output signal of the comparator is stored in described hit by Strobe signal In middle register.

4. detector as claimed in claim 3, it is characterised in that: if the signal A_PIX between the upper and lower thresholds if export Low level indicates that the pixel is hit by particle, then the STATE signal of the comparator output is high level, otherwise is low level.

5. detector as claimed in claim 4, it is characterised in that: the register that hits has normal mode, shielding and test three Kind operating mode.

6. detector as claimed in claim 5, it is characterised in that: the normal mode is that the register that hits is believed by Strobe The storage of number control comparator output hits information to represent.

7. detector as claimed in claim 5, it is characterised in that: the mask pattern is that STATE output is permanent low level, in turn Shield the pixel hits information.

8. detector as claimed in claim 5, it is characterised in that: the test pattern includes digit pulse and analog pulse test Two kinds, digit pulse test is to be not required to consider the output of analog channel front end signal, STATE when test voltage is high level It is set to high level；Analog pulse test is that test voltage injects test by the testing capacitor into input node V_PIX Charge is tested.

9. detector as claimed in claim 2, it is characterised in that: in the analog channel, signal A_PIX is followed through the source After circuit, through described simulated cushioned under the control for the ranks selection signal that the pixel configuration and read-out control circuit export Device is exported to the column ADC, is exported after carrying out digitized processing by the column ADC.

10. a kind of monolithic active pixel detection method of the detector as described in any one of claim 1 to 9, it is characterised in that packet Include following steps:

1) pixel configuration and read-out control circuit generate effective Strobe signal, while exporting Readout Start signal control Top layer reading circuit processed starts progress particle and hits location information and energy information reading, within the time, particle bombardment pixel Circuit generates a large amount of charges, amplifies by analog channel front-end circuit and compares to obtain and hit information, is controlled by Strobe signal It this is hit into information is latched in and hit in register, output STATE signal to row reading circuit；

2) row reading circuit receives STATE signal, generates Valid signal and exports to top layer reading circuit, by top layer reading circuit The coding circuit work in it is controlled, and is sequentially output according to coded sequence and to be hit the particle of pixel and hit location information, it should Information is stored in top layer reading circuit；

3) Valid signal controls column ADC simultaneously and opens, and pixel configuration and read-out control circuit hit position to the particle for hitting pixel Confidence breath is decoded, obtained row selects signal Row_select and column selection signal Col_select；

4) it is stored among analog channel front-end circuit by row selects signal Row_select and column selection signal Col_select control The voltage of node through source follow circuit output to round-robin algorithm column ADC carry out analog-to-digital conversion, the analog quantity by column ADC sample after, It by closing rows choosing, column selection signal, and opens PMOS reset circuit and input node voltage is resetted, wait particle next time Bombardment；

5) column ADC exports particle energy amplitude Δ E information to top layer reading circuit, and hits position with the particle for hitting pixel Information is corresponding, while realizing that particle hits position sensing and energy magnitude Δ E detection；Particle is hit position by top layer reading circuit It sets and is packaged into data frame with energy magnitude Δ E, be transmitted to outside MAPS by serial output link；

6) same Strobe signal control storage is hit after particle hits location information and energy magnitude Δ E output, and top layer is read Circuit returns to Readout Done signal to pixel configuration and read-out control circuit out, and this time Strobe signal neutralizes, and can match The Strobe signal generated next time is set, is repeated the above steps 1) to step 5).