CN110459654A - Ultraviolet LED epitaxial structure - Google Patents
Ultraviolet LED epitaxial structure Download PDFInfo
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- CN110459654A CN110459654A CN201910723657.3A CN201910723657A CN110459654A CN 110459654 A CN110459654 A CN 110459654A CN 201910723657 A CN201910723657 A CN 201910723657A CN 110459654 A CN110459654 A CN 110459654A
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- led epitaxial
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- 230000004888 barrier function Effects 0.000 claims abstract description 23
- 238000005036 potential barrier Methods 0.000 claims abstract description 10
- 230000000737 periodic effect Effects 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 14
- 230000007547 defect Effects 0.000 abstract description 9
- 239000013078 crystal Substances 0.000 abstract description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 15
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 4
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
Abstract
The present invention provides a kind of ultraviolet LED epitaxial structures, comprising: in stress control layer, N-shaped current extending, active area luminescent layer and the p-type current extending that growth substrates surface is successively grown；Wherein, active area luminescent layer is by InaGa1‑aN quantum well layer and GaN/InbAl1‑bThe periodic structure that N superlattices barrier layer is formed, period are 5~8；GaN/InbAl1‑bN superlattices barrier layer is InbAl1‑bThe N layers of periodic structure formed with GaN layer, the period is 4~8, and 0.01 < a < 0.05,0.16 <b < 0.18, effectively solves the technical problems such as crystal defect present in the interface occurred in existing ultraviolet LED epitaxial structure missing, AlGaN potential barrier.
Description
Technical field
The present invention relates to LED technology field, especially a kind of ultraviolet LED epitaxial structure.
Background technique
In the GaN base ultraviolet LED structure of 365nm-370nm wave-length coverage, active light emitting area generally uses multiple quantum wells
Structure, wherein well layer uses InGaN material, and barrier layer uses AlGaN material, and AlGaN potential barrier must have higher Al group
Divide (> 12%) carrier is limited in Quantum Well, improves the internal quantum efficiency of multi-quantum pit structure.But high Al contents
The case where there are obvious lattice mismatches between AlGaN potential barrier and InGaN Quantum Well causes to generate boundary defect and coarse
Epitaxial surface.In addition, InGaN Quantum Well is destroyed at high temperature in order to prevent, the growth temperature of AlGaN potential barrier generally cannot
It is too high, and there are a large amount of point defects in the AlGaN potential barrier of the high Al contents of grown at low temperature, restrict low band ultraviolet LED
Internal quantum efficiency.
Summary of the invention
In order to overcome the above deficiency, the present invention provides a kind of ultraviolet LED epitaxial structures, effectively solve existing ultraviolet LED
The technical problems such as crystal defect present in the boundary defect that occurs in epitaxial structure, AlGaN potential barrier.
Technical solution provided by the invention are as follows:
A kind of ultraviolet LED epitaxial structure, comprising: expand in stress control layer, the N-shaped electric current that growth substrates surface is successively grown
Open up layer, active area luminescent layer and p-type current extending；Wherein, active area luminescent layer is by InaGa1-aN quantum well layer and GaN/
InbAl1-bThe periodic structure that N superlattices barrier layer is formed, period are 5~8；GaN/InbAl1-bN superlattices barrier layer is
InbAl1-bThe N layers of periodic structure formed with GaN layer, the period is 4~8, and 0.01 < a < 0.05,0.16 <b < 0.18.
It is further preferred that InaGa1-aN quantum well layer with a thickness of 1~5nm, GaN/InbAl1-bN superlattices barrier layer
With a thickness of 10~20nm.
It is further preferred that GaN/InbAl1-bN superlattices barrier layer is doped with concentration 5 × 1016~5 × 1018cm-2It
Between silicon.
In ultraviolet LED epitaxial structure provided by the invention, with short-period GaN/InbAl1-bN superlattice structure replaces former
The AlGaN potential barrier of high Al contents, obtain high Al contents quasi- AlGaN potential barrier while, efficiently solve high Al contents with
Contradiction between boundary defect, crystal defect and surface topography realizes high-crystal quality ultraviolet LED multi-quantum pit structure, subtracts
The boundary of the crystal defect of high Al contents barrier layer itself and high Al contents barrier layer and InGaN Quantum Well in ultraviolet LED is lacked
While planar defect, the luminous efficiency of ultraviolet LED is improved.
Detailed description of the invention
Fig. 1 is ultraviolet LED epitaxial structure schematic diagram in the present invention；
Fig. 2 is GaN/In in an examplebAl1-bN superlattices barrier layer construction schematic diagram；
Fig. 3 is the surface A FM picture of active area luminescent layer.
Appended drawing reference:
1- growth substrates layer, 2- stress control layer, 3-n type current extending, 4- active area luminescent layer, 5-p type electric current expand
Open up layer, 41-InaGa1-aN quantum well layer, 42-GaN/InbAl1-bN superlattices barrier layer.
Specific embodiment
In order to illustrate more clearly of case study on implementation of the present invention or technical solution in the prior art, control attached drawing is said below
Bright a specific embodiment of the invention.It should be evident that drawings in the following description are only some embodiments of the invention, it is right
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings
His attached drawing, and obtain other embodiments.
It is as shown in Figure 1 ultraviolet LED (emission wavelength 365-370nm) epitaxial structure schematic diagram provided by the invention, from figure
In find out, include: to be answered what growth substrates (in diagram, be silicon substrate layer 1) surface was successively grown in the ultraviolet LED epitaxial structure
Power control layer 2, N-shaped current extending 3, active area luminescent layer 4 and p-type current extending 5；Wherein, active area luminescent layer 4 is served as reasons
InaGa1-aN quantum well layer 41 and GaN/InbAl1-bThe periodic structure that N superlattices barrier layer 42 is formed, period are 5~8；GaN/
InbAl1-bN superlattices barrier layer is InbAl1-bThe N layers of periodic structure formed with GaN layer, period are 4~8, and 0.01 < a <
The Lattice Matching with GaN (is realized) in 0.05 (emission wavelength according to demand is adjusted), 0.16 <b < 0.18.In this configuration,
InaGa1-aN quantum well layer 41 with a thickness of 1~5nm, GaN/InbAl1-bN superlattices barrier layer 42 with a thickness of 10~20nm, and
GaN/InbAl1-bN superlattices barrier layer is doped with concentration 5 × 1016~5 × 1018cm-2Between silicon.In one example, such as
Shown in Fig. 2, GaN/InbAl1-bN superlattices barrier layer is the In by 4 periodsbAl1-bThe N layers of periodic structure formed with GaN layer.
It in one example, the use of MOCVD growth apparatus, selection Si (111) substrate is silicon substrate layer 1, undoped AlN/
AlGaN layer is stress control layer 2, and the AlGaN layer of Si doping is as N-shaped current extending 3, InaGa1-aN quantum well layer and GaN/
InbAl1-bThe multi-quantum pit structure of N superlattices barrier layer composition is as active area luminescent layer 4, and the AlGaN layer of Mg doping is as p
Type current extending 5, specific:
Firstly, silicon substrate layer 1 is placed into MOCVD reaction chamber, 1100 DEG C are warming up to, and be passed through H2Carry out high temperature surface
Cleaning treatment.
Then, reaction chamber temperature is set in 800~1200 DEG C, trimethyl aluminium (TMAl), ammonia is passed through into reaction chamber
(NH3), in H2As one layer of AlN is grown under conditions of carrier gas, pass through trimethyl aluminium (TMAl), front three on AlN under the same terms
Base gallium (TMGa), ammonia (NH3) one layer of AlGaN of growth, form stress control layer 2.
And then, with silane (SiH4) it is used as dopant, doping concentration is 8 × 1018cm-3, growth temperature is 900~1100
DEG C, realize the growth of N-shaped current extending 3, the N-shaped current extending 3 to grow out is the N-shaped of Al component 7%
Al0.07Ga0.93N layers, thickness 3000nm.
Later, reaction chamber temperature is 750 DEG C, with nitrogen (N2) it is used as carrier gas, it is passed through trimethyl indium (TMIn), triethyl-gallium
(TEGa), ammonia (NH3) growth thickness be 3nm In0.02Ga0.98N quantum well layer；Then reaction chamber temperature is increased to 850
DEG C, it is passed through trimethyl aluminium (TMAl), trimethyl indium (TMIn), ammonia (NH3) growth thickness be 1.5nm In0.17Al0.83N layers,
It is passed through triethyl-gallium (TEGa), ammonia (NH at the same temperature later3) growth 1nm GaN layer, In0.17Al0.83N layers and GaN
It is passed through silane (SiH4) in layer to be doped, doping concentration 2 × 1018cm-3.GaN/ is prepared in 6 periods of repeated growth
In0.17Al0.83The In in 5 periods of N superlattices barrier layer and repeated growth0.02Ga0.98N quantum well layer and GaN/In0.17Al0.83N
Superlattices barrier layer obtains active area luminescent layer 4.The emission wavelength 365nm of the quantum well structure, belongs near ultraviolet band.
Finally, with H2Or N2As carrier gas, it is passed through TMAl, TMGa and NH3, and with two luxuriant magnesium (Cp2Mg) it is used as dopant
P-type current extending 5 is grown, under conditions of epitaxial growth temperature is 900 DEG C~1000 DEG C with a thickness of 80nm.
It is illustrated in figure 3 the surface A FM picture of active area luminescent layer 4, wherein Fig. 3 (a) is in this example by InaGa1-aN
Quantum well layer and GaN/InbAl1-bThe surface A FM picture for the active area luminescent layer that N superlattices barrier layer is formed；Fig. 3 (b) is existing
There is the surface A FM picture for the active area luminescent layer that high component AlGaN potential barrier is formed in technology, it can be seen from the figure that Fig. 3
(a) there is apparent change compared to Fig. 3 (b) surface topography.
UV LED chip (including LED chip and high Al contents LED chip in this example) is cut into 1.125*
1.125mm size carries out measuring light power under 350mA electric current, and the optical power of LED chip is 422mW, high Al group in this example
The optical power for dividing LED chip is 403mW, it is seen then that the optical power for the UV LED chip being prepared using the method for the present invention is obtained
It is promoted.
It should be noted that above-described embodiment can be freely combined as needed.The above is only of the invention preferred
Embodiment, it is noted that for those skilled in the art, in the premise for not departing from the principle of the invention
Under, several improvements and modifications can also be made, these modifications and embellishments should also be considered as the scope of protection of the present invention.
Claims (3)
1. a kind of ultraviolet LED epitaxial structure characterized by comprising the stress control layer that successively grows on growth substrates surface,
N-shaped current extending, active area luminescent layer and p-type current extending；Wherein, active area luminescent layer is by InaGa1-aN Quantum Well
Layer and GaN/InbAl1-bThe periodic structure that N superlattices barrier layer is formed, period are 5~8；GaN/InbAl1-bN superlattices potential barrier
Layer is InbAl1-bThe N layers of periodic structure formed with GaN layer, the period is 4~8, and 0.01 < a < 0.05,0.16 <b < 0.18.
2. ultraviolet LED epitaxial structure as described in claim 1, which is characterized in that InaGa1-aN quantum well layer with a thickness of 1~
5nm, GaN/InbAl1-bN superlattices barrier layer with a thickness of 10~20nm.
3. ultraviolet LED epitaxial structure as claimed in claim 1 or 2, which is characterized in that GaN/InbAl1-bN superlattices barrier layer
Doped with concentration 5 × 1016~5 × 1018cm-2Between silicon.
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|---|---|---|---|
| CN201910723657.3A CN110459654A (en) | 2019-08-07 | 2019-08-07 | Ultraviolet LED epitaxial structure |
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| CN201910723657.3A CN110459654A (en) | 2019-08-07 | 2019-08-07 | Ultraviolet LED epitaxial structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111933757A (en) * | 2020-06-28 | 2020-11-13 | 北京大学 | AlGaN-based deep ultraviolet quantum well and preparation method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090065762A1 (en) * | 2007-09-10 | 2009-03-12 | Seoul Opto Device Co., Ltd. | Light emitting diode with improved structure |
| CN105070805A (en) * | 2015-08-17 | 2015-11-18 | 晶能光电（常州）有限公司 | Silicon-based nitride UV LED epitaxial structure and realizing method thereof |
| CN108682719A (en) * | 2018-04-24 | 2018-10-19 | 河源市众拓光电科技有限公司 | A kind of multiple quantum well layer, LED epitaxial structure and preparation method thereof |
| CN109786522A (en) * | 2019-01-07 | 2019-05-21 | 华灿光电（浙江）有限公司 | A kind of GaN base light emitting epitaxial wafer and preparation method thereof |
-
2019
- 2019-08-07 CN CN201910723657.3A patent/CN110459654A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090065762A1 (en) * | 2007-09-10 | 2009-03-12 | Seoul Opto Device Co., Ltd. | Light emitting diode with improved structure |
| CN105070805A (en) * | 2015-08-17 | 2015-11-18 | 晶能光电（常州）有限公司 | Silicon-based nitride UV LED epitaxial structure and realizing method thereof |
| CN108682719A (en) * | 2018-04-24 | 2018-10-19 | 河源市众拓光电科技有限公司 | A kind of multiple quantum well layer, LED epitaxial structure and preparation method thereof |
| CN109786522A (en) * | 2019-01-07 | 2019-05-21 | 华灿光电（浙江）有限公司 | A kind of GaN base light emitting epitaxial wafer and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111933757A (en) * | 2020-06-28 | 2020-11-13 | 北京大学 | AlGaN-based deep ultraviolet quantum well and preparation method and application thereof |
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Address after: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Applicant after: Jingneng optoelectronics Co.,Ltd. Address before: 330096 No. 699, Aixi Hubei Road, Nanchang High-tech Development Zone, Jiangxi Province Applicant before: LATTICE POWER (JIANGXI) Corp. |
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Application publication date: 20191115 |