CN110444617A - A kind of photodetector and its manufacturing method based on InGaAs material - Google Patents
A kind of photodetector and its manufacturing method based on InGaAs material Download PDFInfo
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- CN110444617A CN110444617A CN201910816576.8A CN201910816576A CN110444617A CN 110444617 A CN110444617 A CN 110444617A CN 201910816576 A CN201910816576 A CN 201910816576A CN 110444617 A CN110444617 A CN 110444617A
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 title claims abstract description 138
- 239000000463 material Substances 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 230000003287 optical effect Effects 0.000 claims abstract description 61
- 230000008859 change Effects 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000005247 gettering Methods 0.000 claims abstract description 16
- 230000007704 transition Effects 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 229910004205 SiNX Inorganic materials 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 8
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 239000002131 composite material Substances 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 230000004044 response Effects 0.000 abstract description 9
- 230000005540 biological transmission Effects 0.000 abstract description 8
- 238000004891 communication Methods 0.000 abstract description 8
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 238000010521 absorption reaction Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 8
- 230000033001 locomotion Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000004043 responsiveness Effects 0.000 description 3
- 239000011358 absorbing material Substances 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
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- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The embodiment of the present invention provides a kind of photodetector and its manufacturing method based on InGaAs material, which successively includes: substrate, InP buffer layer, N from bottom to up+- InGaAs contact layer, N-type InP, InGaAsP band gap transition zone, InGaAs Intrinsic Gettering layer, p-type adulterate gradual change InGaAs optical window layer, in which: the concentration that InGaAs material is adulterated in p-type doping gradual change InGaAs optical window layer gradually changes, in N-type layer of InP through N+- InGaAs contact layer draws N-type Ohmic electrode, draws p-type Ohmic electrode in p-type doping gradual change InGaAs optical window layer.A kind of photodetector provided in an embodiment of the present invention and its manufacturing method, optical window is using the InGaAs material of doping gradual change as P plot structure, the structure can establish diffusion built-in field in the area P, built-in field effectively overcomes the self-absorption problem of photo-generated carrier, to effectively improve the quantum efficiency and response speed of photodetector, meet the transmission demand of high-speed communication system.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of photodetectors and its system based on InGaAs material
Make method.
Background technique
With the gradually intensification and the aggravation of economical globalization tendency of human informationization construction, human society life each side
Constantly increasing in face of acquisition of information and the quantity of exchange, the need of the mobile access of the long distance transmission and bandwidth to mass data
Ask increasingly prominent.At a high speed, Ultra-High Speed Optical Communication technology and broadband light carry wireless technology as the main side solved these problems
Method, has obtained great concern, and an optical fiber telecommunications system includes the photoelectricity such as semiconductor laser, semiconductor detector and optical fiber
Device, wherein photodetector is the core of photoreceiver, and optical signal is reduced to electric signal by detector and is carried out at signal
Reason, its performance directly affect speed and bandwidth of fiber optic communication etc..In other fields, photodetector is also answered more and more
For in the systems such as precise measurement, Fibre Optical Sensor, spectrometer and remote sensing.
Photodetector is a kind of sensitive device, has the function of photoelectricity variation, and photodetector is many kinds of, in order to suitable
It answers optic communication to bandwidth direction growth requirement, various types of high-speed photodetector occurs, as avalanche optoelectronic detects
Device (abbreviation APD), MSM-PD with low (abbreviation MSM), PIN photoelectric detector etc., APD have both spy simultaneously
It surveys and amplifies two kinds of functions, but structure is complicated；MSM is incorporated into the semiconductor material for being difficult to adulterate, it is the same as electricity without manufacturing pn-junction
The manufacturing process of sub- device is fully compatible, but performance is poor, and PIN structural and manufacture craft are fairly simple, have excellent performance, cost
It is lower, therefore be most widely used.
Especially obtained great development by the photodetector of absorbing material of InGaAs, in the prior art with
InGaAs is that the photodetector of absorbing material generally uses p-InP/i-InGaAs/n-InP structure, due to p-InP/i-
For InGaAs there are potential barrier of heterogenous junction, potential barrier will affect the transmission speed of carrier, so as to cause the sound of existing photodetector
Answer speed slow.
Summary of the invention
In view of the above-mentioned problems, the embodiment of the present invention provides a kind of photodetector based on InGaAs material and its manufacturer
Method.
In a first aspect, the embodiment of the present invention provides a kind of photodetector based on InGaAs material, the photodetection
Device epitaxial structure successively includes: substrate, InP buffer layer, N from bottom to up+- InGaAs contact layer, N-type InP, InGaAsP band gap
Transition zone, InGaAs Intrinsic Gettering layer, p-type adulterate gradual change InGaAs optical window layer, in which:
The concentration that InGaAs material is adulterated in the p-type doping gradual change InGaAs optical window layer gradually changes, in the N-type
Layer of InP is through the N+- InGaAs contact layer draws N-type Ohmic electrode, draws P in p-type doping gradual change InGaAs optical window layer
Type Ohmic electrode.
Preferably, the upper surface of the p-type doping gradual change InGaAs optical window layer covers one layer of anti-reflection film, and the anti-reflection film is
SiNxMonofilm or SiO2/SiNxComposite membrane.
Preferably, the concentration of InGaAs material is adulterated by 2e in the p-type doping gradual change InGaAs optical window layer17cm-3Increase
To 2e19cm-3。
Preferably, the substrate is the InP material for adulterating Fe, and the thickness range of the substrate is 330 μm -370 μm.
Preferably, the material of the InP buffer layer is i-InP, and the thickness range of the InP buffer layer is 0.1 μm of -0.5 μ
The concentration of m, i-InP are less than 1015cm-3。
Preferably, the N+The thickness range of-InGaAs contact layer is 0.5 μm -1.5 μm, concentration range 1018cm-3~
1019cm-3。
Preferably, the N-type layer of InP is current extending, and material thickness range is 0.2 μm -0.5 μm, doping concentration model
Enclose is 1017cm-3~1019cm-3。
Preferably, the thickness range of the InGaAsP band gap transition zone is 20nm-50nm, and concentration is less than 1015cm-3。
Preferably, the thickness range of the InGaAs Intrinsic Gettering layer is 1.0 μm -3.5 μm, and concentration is less than 1015cm-3。
Second aspect, the embodiment of the present invention provide a kind of manufacturing method of photodetector based on InGaAs material, packet
It includes:
One layer of eigen I nP buffer layer is grown on substrate；
One layer of N is grown on the InP buffer layer+- InGaAs contact layer；
In the N+One layer of N-type InP is grown on-InGaAs contact layer；
InGaAsP band gap transition zone is grown on the N-type InP；
InGaAs Intrinsic Gettering layer is grown on the InGaAsP band gap transition zone；
Growing P-type adulterates gradual change InGaAs optical window layer on the InGaAs Intrinsic Gettering layer, and the p-type adulterates gradual change
The concentration that InGaAs material is adulterated in InGaAs optical window layer gradually changes；
SiN is deposited in p-type doping gradual change InGaAs optical window layer upper surface PECVDxMonofilm or SiO2/SiNxIt is compound
Film；
Mesa etch is carried out on p-type doping gradual change InGaAs optical window layer, exposes the N+- InGaAs contact layer,
And corrode 0.5 μm -1.5 μm of the substrate layer downwards；
The electron beam evaporation plating p-type Ohmic electrode on p-type doping gradual change InGaAs optical window layer, and to described p-type ohm
Electrode carries out RTA annealing；
In the N+E-v evaporates N-type Ohmic electrode on-InGaAs contact layer, and carries out RTA to the N-type Ohmic electrode
Annealing.
A kind of photodetector and its manufacturing method based on InGaAs material provided in an embodiment of the present invention, optical window use
The InGaAs material of gradual change is adulterated as P plot structure, which can establish diffusion built-in field in the area P, and built-in field is effective
Ground overcomes the self-absorption problem of photo-generated carrier, so that photo-generated carrier is spread-drift motion in this layer, and due to diffusion
The effect of built-in field, photo-generated carrier will based on drift motion, thus effectively improve photodetector quantum efficiency and
Response speed meets the transmission demand of high-speed communication system.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is this hair
Bright some embodiments for those of ordinary skill in the art without creative efforts, can be with root
Other attached drawings are obtained according to these attached drawings.
Fig. 1 is the structural schematic diagram of photodetector in the prior art；
Fig. 2 is a kind of structural schematic diagram of the photodetector based on InGaAs material provided in the embodiment of the present invention；
Fig. 3 is a kind of process of the manufacturing method of the photodetector based on InGaAs material provided in an embodiment of the present invention
Figure.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without creative efforts, shall fall within the protection scope of the present invention.
Fig. 1 is the structural schematic diagram of photodetector in the prior art, as shown in Figure 1, Si-InP (Fe) indicates substrate, N-
InP indicates that N-type InP, i-InGaAs indicate that i type InGaAs, P-InP indicate p-type InP, and existing photodetector is by substrate, N
Type InP, i type InGaAs and p-type InP composition, since the material of p-type InP and i type InGaAs is different, in p-type InP and i type
There are hetero-junctions between InGaAs, the photo-generated carrier of the photodetector is easy to accumulate in p-type InP and i type InGaAs interface,
Cause the response speed of photodetector lower.
In view of the above-mentioned problems, the embodiment of the present invention proposes a kind of photodetector, photodetection in the prior art has been solved
The problem that device carrier accumulation causes response speed slow, Fig. 2 are that the one kind provided in the embodiment of the present invention is based on InGaAs material
Photodetector structural schematic diagram, as shown in Fig. 2, the epitaxial structure of the photodetector from bottom to up successively include: lining
Bottom, InP buffer layer, N+- InGaAs contact layer, N-type InP, InGaAsP band gap transition zone, InGaAs Intrinsic Gettering layer, p-type are mixed
Miscellaneous gradual change InGaAs optical window layer, in which:
The concentration that InGaAs material is adulterated in the p-type doping gradual change InGaAs optical window layer gradually changes, in the N-type
Layer of InP is through the N+- InGaAs contact layer draws N-type Ohmic electrode, draws P in p-type doping gradual change InGaAs optical window layer
Type Ohmic electrode.
In Fig. 2, Si-InP (Fe) indicates that substrate, 1-i-InP indicate buffer layer, 2-N+- InGaAs indicates N+- InGaAs connects
Contact layer, 3-N-InP indicate that N-type InP, 4-InGaAs indicate that InGaAsP band gap transition zone, 5-i-InGaAs indicate that InGaAs is intrinsic
Absorbed layer, 6-P+- InGaAs indicates that p-type adulterates gradual change InGaAs optical window layer, and BCB indicates that passivation layer, TiPtAu indicate electrode material
Material, AR-SiNxIndicate that anti-reflection film, P-pad indicate p-type Ohmic electrode contact point, N-pad indicates N-type Ohmic electrode contact point.
In the embodiment of the present invention, gradual change InGaAs optical window layer is adulterated by increasing p-type, the composition material of the optical window layer is
InGaAs, and the concentration of InGaAs is gradual change in the optical window layer, and in N-type layer of InP through N+- InGaAs contact layer is drawn
N-type Ohmic electrode draws p-type Ohmic electrode in p-type doping gradual change InGaAs optical window layer.
In the embodiment of the present invention, p-type Ohmic electrode is Ti/Pt/Au alloy electrode, and N-type Ohmic electrode is Ti/Pt/Au conjunction
Gold electrode.
In general, InP optical window layer does not absorb extraneous incident photon, when optical window layer uses InGaAs, InGaAs can be absorbed into
Penetrate photon, resulting photo-generated carrier, which needs first to be diffused into depletion region and drifts about again, can just be collected generation electric current, due to light
Raw carrier is very slow in p type island region diffusion velocity, directly affects the response speed and responsiveness of photodetector.
But in the embodiment of the present invention, for optical window using the InGaAs material of doping gradual change as P plot structure, which can
Diffusion built-in field is established in the area P, built-in field effectively overcomes the self-absorption problem of photo-generated carrier, makes photo-generated carrier
Spread-drift motion in the layer, and the effect due to spreading built-in field, photo-generated carrier will based on drift motion,
To effectively improve the quantum efficiency and response speed of photodetector, meet the transmission demand of high-speed communication system.
Also, the material of optical window layer and InGaAs Intrinsic Gettering layer is InGaAs in the embodiment of the present invention, only dense
Degree is different, and therefore, optical window layer and InGaAs Intrinsic Gettering layer belong to homojunction in the embodiment of the present invention, do not have gesture in interface
The formation at base, such photo-generated carrier are easier to quickly through substantially increasing the response speed of photodetector.
On the basis of the above embodiments, it is preferable that the upper surface covering one of the p-type doping gradual change InGaAs optical window layer
Layer anti-reflection film, the anti-reflection film are SiNxMonofilm or SiO2/SiNxComposite membrane.
Specifically, one layer of anti-reflection film is covered in the upper surface of optical window layer, which can be SiNxMonofilm, can also be with
For SiO2/SiNxComposite membrane.The transmissivity of light can be improved in the anti-reflection film.Entire device is mesa structure, is passivated using BCB.
On the basis of the above embodiments, it is preferable that adulterate InGaAs material in the p-type doping gradual change InGaAs optical window layer
The concentration of material is by 2e17cm-3Increase to 2e19cm-3。
In order to improve photodetector response speed and responsiveness, the embodiment of the present invention, which is proposed, is grown to tool for optical window layer
There is the optical window layer of doping roll-off characteristic InGaAs material, doping concentration is by 2e17cm-3Increase to 2e19cm-3.Since optical window layer adulterates
The gradual change of concentration causes to form diffusion built-in field in the area P doped layer, which can make photo-generated carrier drift about in the layer
Movement, this just effectively improves the transmission speed and quantum efficiency of device, is suitble to the application of high-speed transfer network.
Specifically, the substrate is the InP material for adulterating Fe, and the thickness range of the substrate is 330 μm -370 μm.
Specifically, the material of the InP buffer layer is i-InP, and the thickness range of the InP buffer layer is 0.1 μm of -0.5 μ
The concentration of m, i-InP are less than 1015cm-3。
Specifically, the N+The thickness range of-InGaAs contact layer is 0.5 μm -1.5 μm, concentration range 1018cm-3~
1019cm-3。
Specifically, the N-type layer of InP is current extending, and material thickness range is 0.2 μm -0.5 μm, doping concentration model
Enclose is 1017cm-3~1019cm-3。
Specifically, the thickness range of the InGaAsP band gap transition zone is 20nm-50nm, and concentration is less than 1015cm-3。
Specifically, the thickness range of the InGaAs Intrinsic Gettering layer is 1.0 μm -3.5 μm, and concentration is less than 1015cm-3。
Fig. 3 is a kind of process of the manufacturing method of the photodetector based on InGaAs material provided in an embodiment of the present invention
Figure, as shown in figure 3, this method comprises:
S1 grows one layer of eigen I nP buffer layer on substrate；
S2 grows one layer of N on the InP buffer layer+- InGaAs contact layer；
S3, in the N+One layer of N-type InP is grown on-InGaAs contact layer；
S4 grows InGaAsP band gap transition zone on the N-type InP；
S5 grows InGaAs Intrinsic Gettering layer on the InGaAsP band gap transition zone；
S6, growing P-type adulterates gradual change InGaAs optical window layer on the InGaAs Intrinsic Gettering layer, and the p-type doping is gradually
The concentration for becoming doping InGaAs material in InGaAs optical window layer gradually changes；
SiN is deposited in p-type doping gradual change InGaAs optical window layer upper surface PECVD in S7xMonofilm or SiO2/SiNxIt is multiple
Close film；
S8 carries out mesa etch on p-type doping gradual change InGaAs optical window layer, exposes the N+- InGaAs contact
Layer, and corrode 0.5 μm -1.5 μm of the substrate layer downwards；
S9, the electron beam evaporation plating p-type Ohmic electrode on p-type doping gradual change InGaAs optical window layer, and to the p-type Europe
Nurse electrode carries out RTA annealing；
S10, in the N+E-v evaporates N-type Ohmic electrode on-InGaAs contact layer, and carries out to the N-type Ohmic electrode
RTA annealing.
Specifically, when manufacturing the photodetector, one layer of eigen I nP buffer layer is grown on substrate first；Then in InP
One layer of N is grown on buffer layer+- InGaAs contact layer is adulterated using Si or Sn；Then in N+One layer is grown on-InGaAs contact layer
N-type InP is adulterated using Si or Sn；InGaAsP band gap transition zone is grown on N-type InP；It is raw on InGaAsP band gap transition zone
Long InGaAs Intrinsic Gettering layer；On InGaAs Intrinsic Gettering layer growing P-type adulterate gradual change InGaAs optical window layer, using Zn, C,
One of Be, Cd doping, the concentration that p-type adulterates doping InGaAs material in gradual change InGaAs optical window layer gradually change；In p-type
It adulterates gradual change InGaAs optical window layer upper surface PECVD and SiN is depositedxMonofilm or SiO2/SiNxComposite membrane；Gradual change is adulterated in p-type
Mesa etch is carried out on InGaAs optical window layer, exposes the N+- InGaAs contact layer, and corrode 0.5 μm of the substrate layer-downwards
1.5μm；The electron beam evaporation plating p-type Ohmic electrode on p-type doping gradual change InGaAs optical window layer, and RTA is carried out to p-type Ohmic electrode
Annealing；In N+E-v evaporates N-type Ohmic electrode on-InGaAs contact layer, and carries out at RTA annealing to N-type Ohmic electrode
Reason.
To sum up, the embodiment of the present invention provide it is a kind of based on InGaAs/InP it is reproducible, responsiveness is high, reliable and stable suitable
The photodetector of PIN structural for high speed optical communication system.Using the InGaAs material of doping gradual change as the area P doped region
The structure of optical window layer, the structure can establish diffusion built-in field in the area P, efficiently solve photo-generated carrier optical window layer from
Absorption problem, and the high speed drift of photo-generated carrier improves the collection efficiency of p-type doped layer photo-generated carrier by the area,
It is homojunction since optical window layer and absorbed layer are InGaAs to effectively improve the quantum efficiency and response speed of PIN device,
There is no photoholes in the accumulation of junction, this effectively improves the transmission rate of device, meet high-speed communication system high-speed,
The transmission demand of high-responsivity.
The apparatus embodiments described above are merely exemplary, wherein described, unit can as illustrated by the separation member
It is physically separated with being or may not be, component shown as a unit may or may not be physics list
Member, it can it is in one place, or may be distributed over multiple network units.It can be selected according to the actual needs
In some or all of the modules achieve the purpose of the solution of this embodiment.Those of ordinary skill in the art are not paying creativeness
Labour in the case where, it can understand and implement.
Through the above description of the embodiments, those skilled in the art can be understood that each embodiment can
It realizes by means of software and necessary general hardware platform, naturally it is also possible to pass through hardware.Based on this understanding, on
Stating technical solution, substantially the part that contributes to existing technology can be embodied in the form of software products in other words, should
Computer software product may be stored in a computer readable storage medium, such as ROM/RAM, magnetic disk, CD, including several fingers
It enables and using so that a computer equipment (can be personal computer, server or the network equipment etc.) executes each implementation
Method described in certain parts of example or embodiment.
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used
To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features；
And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and
Range.
Claims (10)
1. a kind of photodetector based on InGaAs material, which is characterized in that the photodetector epitaxial structure from down toward
On successively include: substrate, InP buffer layer, N+- InGaAs contact layer, N-type InP, InGaAsP band gap transition zone, InGaAs are intrinsic
Absorbed layer, p-type adulterate gradual change InGaAs optical window layer, in which:
The concentration that InGaAs material is adulterated in the p-type doping gradual change InGaAs optical window layer gradually changes, in the N-type layer of InP
Through the N+- InGaAs contact layer draws N-type Ohmic electrode, draws p-type ohm in p-type doping gradual change InGaAs optical window layer
Electrode.
2. photodetector according to claim 1, which is characterized in that the p-type adulterates the upper of gradual change InGaAs optical window layer
Surface covers one layer of anti-reflection film, and the anti-reflection film is SiNxMonofilm or SiO2/SiNxComposite membrane.
3. photodetector according to claim 1, which is characterized in that mixed in the p-type doping gradual change InGaAs optical window layer
The concentration of miscellaneous InGaAs material is by 2e17cm-3Increase to 2e19cm-3。
4. photodetector according to claim 1, which is characterized in that the substrate is the InP material for adulterating Fe, the lining
The thickness range at bottom is 330 μm -370 μm.
5. photodetector according to claim 1, which is characterized in that the material of the InP buffer layer is i-InP, described
The thickness range of InP buffer layer is 0.1 μm -0.5 μm, and the concentration of i-InP is less than 1015cm-3。
6. photodetector according to claim 1, which is characterized in that the N+The thickness range of-InGaAs contact layer is
0.5 μm -1.5 μm, concentration range 1018cm-3~1019cm-3。
7. photodetector according to claim 1, which is characterized in that the N-type layer of InP is current extending, and material is thick
Spending range is 0.2 μm -0.5 μm, doping concentration range 1017cm-3~1019cm-3。
8. photodetector according to claim 1, which is characterized in that the thickness range of the InGaAsP band gap transition zone
For 20nm-50nm, concentration is less than 1015cm-3。
9. photodetector according to claim 1, which is characterized in that the thickness range of the InGaAs Intrinsic Gettering layer is
1.0 μm -3.5 μm, concentration is less than 1015cm-3。
10. a kind of manufacturing method of the photodetector based on InGaAs material characterized by comprising
One layer of eigen I nP buffer layer is grown on substrate；
One layer of N is grown on the InP buffer layer+- InGaAs contact layer；
In the N+One layer of N-type InP is grown on-InGaAs contact layer；
InGaAsP band gap transition zone is grown on the N-type InP；
InGaAs Intrinsic Gettering layer is grown on the InGaAsP band gap transition zone；
Growing P-type adulterates gradual change InGaAs optical window layer on the InGaAs Intrinsic Gettering layer, and the p-type adulterates gradual change InGaAs
The concentration that InGaAs material is adulterated in optical window layer gradually changes；
SiN is deposited in p-type doping gradual change InGaAs optical window layer upper surface PECVDxMonofilm or SiO2/SiNxComposite membrane；
Mesa etch is carried out on p-type doping gradual change InGaAs optical window layer, exposes the N+- InGaAs contact layer, and downwards
Corrode 0.5 μm -1.5 μm of the substrate layer；
The electron beam evaporation plating p-type Ohmic electrode on p-type doping gradual change InGaAs optical window layer, and to the p-type Ohmic electrode
Carry out RTA annealing；
In the N+E-v evaporates N-type Ohmic electrode on-InGaAs contact layer, and carries out at RTA annealing to the N-type Ohmic electrode
Reason.
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