CN110411483A - The reading circuit and its sensor array of novel large scale sensor array - Google Patents
The reading circuit and its sensor array of novel large scale sensor array Download PDFInfo
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- CN110411483A CN110411483A CN201910790765.2A CN201910790765A CN110411483A CN 110411483 A CN110411483 A CN 110411483A CN 201910790765 A CN201910790765 A CN 201910790765A CN 110411483 A CN110411483 A CN 110411483A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/24—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45264—Complementary cross coupled types
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017509—Interface arrangements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017545—Coupling arrangements; Impedance matching circuits
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018557—Coupling arrangements; Impedance matching circuits
- H03K19/018571—Coupling arrangements; Impedance matching circuits of complementary type, e.g. CMOS
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Abstract
The invention discloses a kind of reading circuits of novel large scale sensor array, if including main line parallel channel, include the Differential Detection module being sequentially connected in series, signal cross coupling module and difference integration module per parallel channel all the way；The charge signal that large scale sensor array exports is converted to first voltage signal and up-delivering signal cross-coupling module by Differential Detection module；First voltage signal is converted to positive phase voltage signal all the way and all the way minus phase voltage signal and uploads difference integration module by signal cross coupling module；Positive phase voltage signal and minus phase voltage signal are carried out difference integral and are output to the subsequent peripheral signal processing circuit of large scale sensor array by difference integration module.The invention also discloses the large scale sensor arrays for the reading circuit for including the novel large scale sensor array.The intensity of read output signal greatly improved in the present invention, so that the touching signals of large scale sensor array are more easy to identify；And circuit is simple and reliable, and it is low in cost.
Description
Technical field
Present invention relates particularly to the reading circuits and its sensor array of a kind of novel large scale sensor array.
Background technique
The sensor technology of array important role of performer in modern electronic product and equipment.In recent years, array
The sensors such as the mechanical-electric coupling of formula, microcomputer are electrically coupled, photoelectric coupling, acoustic-electric couple all achieve biggish progress.Especially, base
In thin-film capacitor array or the touch sensing, fingerprint sensor, acceleration sensing of micro-electromechanical technology (MEMS) capacitor array
It device and is obtained in the consumption electronic products such as mobile phone, plate, smart camera based on photodiode/triode imaging sensor
Obtained a large amount of successful application.Due to controlling and sensing the continuous promotion of precision, the requirement of the reading circuit of sensor array is got over
Come higher.It is contemplated that 5G Internet of Things, car networking application scenarios in, array-type sensor will be applied even more extensively.
Due to the expansion of sensor array scale, the intensity of coupling amount is reduced between multiple physical field, interference volume and noisiness increase, these are all
It is required that the reading circuit of novel sensor array designs.Fig. 1 illustrate the driving circuit of array-type sensor, reading circuit and its
Connection relationship.Although the specific implementation of sensor, even sensor mechanism are multifarious, they all generally use array
Arrangement, driving and reading circuit substantially communicate.
By taking capacitance touching control array technique as an example.Touch screen technology makes human-computer interaction more convenient, it is widely applied to
Consumer electronics, industrial control equipment, in automobile electronics.Currently, capacitance touching control is the touch screen technology of most mainstream.Compared to electricity
Resistive touch-control or infrared type touch-control, the advantage of capacitance touching control are to support that multi-point touch, noise resisting ability be strong, technology maturation
Degree is high, preparation cost is cheap etc..At this stage, in the applications such as automotive electronics, electronic whiteboard, electronic meeting system, big ruler
Very little high-resolution touch technology is important developing direction.Fig. 2 illustrates the driving circuit (TX) of capacity sensor array, reads
Circuit (RX) and its connection relationship (TX1~TXn, Rx1~Rxm) out.Line (TX) and sense line (RX) is driven to be located at two gold
Belong to layer, form to square crossing coupling array structure；The electrode material of TX and RX generally requires not only conductive but also transparent, indium oxide
Tin (ITO) is common selection.There are several diamond shape electrodes on every line, mutual electricity can be generated between two neighboring diamond shape electrode
Hold.When a finger is touching the screen, it will affect the field distribution at each intersection point (i.e. mutual capacitance)；Since a part of power line passes through
Human body flows into ground, this will cause mutual capacitance amount and becomes smaller, and the quantity of electric charge in sense line also tails off.Therefore, by this mutual capacitance size
Variable quantity be converted into variable quantity and the reading of voltage signal, by reference axis (TX, RX) can positioning touch location hair
It is raw.
After the size of touch screen increases, the length of TX and RX line all increases therewith, thus, on TX and RX line
Dead resistance-capacitor (RC) value also will increase.Due to the charge/discharge loss on driving line TX, touch-control reading circuit output letter
Number intensity will reduce.Again due to the increase of touch-control screen dimensions, the corresponding quantity for driving channel TX and read-out channel RX
It will increase.In order to guarantee certain refreshing frequency, the detection time in each driving channel can be reduced, at this time the integral of read-out channel
Time can also tail off, and the reading intensity of signal can further reduce.
Photoelectric image sensor array and the principle of capacitance touching control array are more similar.Fig. 3 illustrates photoelectric sensor battle array
Driving circuit (TX), reading circuit (RX), pixel circuit and its connection relationship (TX1~TXn, Rx1~Rxm) of column.Here sharp
With the difference of photodiode/triode photoelectricity leakage current, sensing external environment and image can be formed.Similar to capacitive touch
Array is controlled, when image spatial resolution improves, array scale is bigger, the reading circuit of photoelectric image sensor array also faces product
The problems such as reduction, signal read strength reduction between timesharing.
Traditional sensor array readout circuit design have been relatively mature.Entire read-out system includes driving signal
The parts such as device, capacitance variations reading circuit, analog to digital conversion circuit (ADC), data processor.Driving signal be generally square wave or
Other waveforms, the inductive signal that read-out channel is transmitted out by reading circuit are adjusted by a switch metal-oxide-semiconductor, are extracted with phase
Semiperiodic signal integrate and is read using ADC.However, this traditional reading circuit design can not solve large scale, height
The problem that the RC retardation ratio amount that resolution ratio, high refresh rate sensor array are faced is big, signal strength is low.
Summary of the invention
One of the objects of the present invention is to provide one kind to be suitable for large scale sensor array, and high reliablity, is quick on the draw
Novel large scale sensor array reading circuit.
The second object of the present invention be to provide it is a kind of include the novel large scale sensor array reading circuit
Large scale sensor array.
The reading circuit of this novel large scale sensor array provided by the invention, if including main line parallel channel, it is each
Road parallel channel includes Differential Detection module, all the way signal cross coupling module and difference integration module all the way all the way；Difference
Detection module, signal cross coupling module and difference integration module are sequentially connected in series；The input terminal of Differential Detection module connects big ruler
The output end of very little sensor array；Differential Detection module is used to being converted to the charge signal that large scale sensor array exports into the first electricity
It presses signal and is uploaded to signal cross coupling module again after carrying out noise elimination；Signal cross coupling module be used to upload the
One voltage signal is converted to positive phase voltage signal and all the way minus phase voltage signal all the way, and is uploaded to difference integral mould simultaneously
Block；The positive phase voltage signal and minus phase voltage signal that difference integration module is used to upload carry out difference integral, and export
To the subsequent peripheral signal processing circuit of large scale sensor array.
The Differential Detection module is made of calculus of differences amplifying circuit.
The Differential Detection module includes the first input capacitance of Differential Detection, the second input capacitance of Differential Detection, difference
Detect the first input resistance, the second input resistance of Differential Detection, the first filter capacitor of Differential Detection, the second filtered electrical of Differential Detection
Appearance and differential check amplifier；The two paths of signals of large scale sensor array output, it is defeated by concatenated Differential Detection first all the way
Enter input terminal one end that capacitor is input to Differential Detection operational amplifier, another way inputs electricity by concatenated Differential Detection second
Hold the input terminal other end for being input to Differential Detection operation amplifier, the first input resistance of Differential Detection is connected to Differential Detection amplification
Between input terminal one end of device and the output end of differential check amplifier, the second input resistance of Differential Detection is connected to Differential Detection
Between the input terminal other end and ground of amplifier；The first filter capacitor of Differential Detection is connected in parallel on the first input resistance of Differential Detection
Both ends, the second filter capacitor of Differential Detection are connected in parallel on the both ends of the second input resistance of Differential Detection；Differential check amplifier it is defeated
Outlet is the output end of Differential Detection module.
The difference integration module is the difference integrating circuit being made of operational amplifier.
The difference integration module includes difference integral first resistor, difference integral second resistance, difference integral first
Capacitor, difference integrate the second capacitor and difference integral operation amplifier；The input cathode series connection of difference integral operation amplifier is poor
Divide integral the first input resistance；The input anode series connection difference of difference integral operation amplifier integrates the second input resistance；Difference
Difference integral first capacitor is concatenated between input cathode and the output end of difference integral operation amplifier of integral operation amplifier；
The input anode of difference integral operation amplifier integrates the second capacitor with difference is concatenated between ground；The output of signal cross coupling module
Minus phase voltage signal connection difference integrate first resistor, signal cross coupling module output positive phase voltage signal connection
Difference integrates second resistance.
The signal cross coupling module include the first rectification circuit of signal cross, the second rectification circuit of signal cross and
Signal cross negater circuit；The first voltage signal of Differential Detection module output passes through after the first rectifier circuit rectifies of signal cross
Minus phase voltage signal is converted to, and is output to difference integration module；The first voltage signal of Differential Detection module output is also logical
After crossing the progress reversely of signal cross negater circuit, then by being converted to positive phase voltage after the second rectifier circuit rectifies of signal cross
Signal, and it is output to difference integrating circuit.
First rectification circuit of signal cross is the inactive rectification circuit being made of diode.
Second rectification circuit of signal cross is the inactive rectification circuit being made of diode.
First rectification circuit of signal cross is the active rectifying circuit being made of switching tube.
Second rectification circuit of signal cross is the active rectifying circuit being made of switching tube.
The invention also discloses a kind of large scale sensor array, the large scale sensor array includes described novel big
The reading circuit of size sensor array.
The reading circuit and its large scale sensor array of this novel large scale sensor array provided by the invention, pass through difference
Sorting is surveyed, signal cross couples and the mode of difference integral, the signal that large scale sensor array is exported carry out cross-coupling simultaneously
The intensity of read output signal greatly improved in difference output, so that the touching signals of large scale sensor array are more easy to identify；And
And circuit of the invention is simple and reliable, it is low in cost.
Detailed description of the invention
Fig. 1 is the schematic diagram of sensor array column drive circuit, reading circuit and its connection relationship.
Fig. 2 be the driving circuit (TX) of capacitive sensor array, reading circuit (RX) and its connection relationship (TX1~
TXn, Rx1~Rxm) schematic diagram.
Fig. 3 is driving circuit (TX), reading circuit (RX), pixel circuit and its connection relationship of photoelectric sensor array
The schematic diagram of (TX1~TXn, Rx1~Rxm).
Fig. 4 is the composition signal of two row reading circuits (RX [n] and RX [n+1]) of the neighbour of existing sensor array
Figure.
Fig. 5 is the composition schematic diagram of the row reading circuit of the neighbour of the sensor array of existing correlated sampling technology.
Fig. 6 is the composition schematic diagram of the row reading circuit of the neighbour of the sensor array of existing correlated sampling technology.
Fig. 7 is the composition schematic diagram of the row reading circuit for the sensor array that four multiplying power of correlated sampling of the application integrates.
Fig. 8 is in the row reading circuit for the sensor array that four multiplying power of correlated sampling of the application integrates, based on capacitor reality
Existing coupling link schematic diagram.
Fig. 9 is in the row reading circuit for the sensor array that four multiplying power of correlated sampling of the application integrates, based on double CMOS
The coupling link schematic diagram that cross-coupling switch is realized.
Figure 10 is cross-coupling ring in the row reading circuit for the sensor array that four multiplying power of correlated sampling of the application integrates
The first embodiment schematic diagram of section.
Figure 11 is cross-coupling ring in the row reading circuit for the sensor array that four multiplying power of correlated sampling of the application integrates
Save the timing schematic illustration of first embodiment.
Figure 12 is cross-coupling ring in the row reading circuit for the sensor array that four multiplying power of correlated sampling of the application integrates
The second embodiment schematic diagram of section.
Figure 13 is cross-coupling ring in the row reading circuit for the sensor array that four multiplying power of correlated sampling of the application integrates
Save the timing schematic illustration of second embodiment.
Figure 14 is the 3rd embodiment of the row reading circuit for the sensor array that four multiplying power of correlated sampling of the application integrates
Schematic diagram.
Figure 15 is the 3rd embodiment of the row reading circuit for the sensor array that four multiplying power of correlated sampling of the application integrates
Timing schematic illustration.
The simulation result schematic diagram of the reading circuit of Figure 16 the application.
Figure 17 is the experimental result schematic diagram of the reading circuit of the application.
Specific embodiment
Fig. 4 is the composition signal of two row reading circuits (RX [n] and RX [n+1]) of the neighbour of existing sensor array
Figure, wherein single-row reading circuit includes amplifying circuit (k times), integrating circuit, adc circuit；Driving circuit output signal (TX)
Since dead resistance-capacitor (RC) is decayed on line；Noise causes to disturb to the signal of RX [n] and RX [n+1] in array.Its
In, it include amplifying circuit, integrating circuit, adc circuit etc. in the reading circuit of each column.Column can be read letter by amplifying circuit
Number amplification k times；The effect of integrating circuit is to inhibit noisiness, enhancing useful signal by the superposition of the signal in time domain；ADC electricity
The effect on road is the analog quantity digitlization that will be exported, in favor of being further processed for subsequent conditioning circuit and system.Illustrated in Figure 4 this
The reading circuit of kind of classical sensor array is array scale is smaller, resolution ratio is not high, the lower occasion of refresh rate widely uses.
But after the scale increase of sensor array, dead resistance-capacitor (RC) effect on driving circuit output signal (TX) line will
It dramatically increases.As shown in figure 4, driving the signal generation decaying on line TX, drive waveforms to occur tighter after the value increase of RC
The distortion of weight.For extensive sensor array, such as large size capacitive touch screen, this is easy for causing different location
(the driving direction line TX is proximally and distally；The direction sense line RX is proximally and distally) sensor output differ greatly.Especially
It is that large scale sensor array internal noise source is more, such as in large-sized photoelectric sensing array, with RX [n] and RX [n+1] line
The increase of upper pixel unit, the noisiness caused by device leakage current that opens the light in pixel are obviously improved, these noise currents may
It can compare with photoelectric current.To sum up seeing, transducing signal intensity is improved, the heterogeneity of read output signal is reduced and reduces reading
The noise signal in channel is the critical issue of high-performance sensor array design.
Fig. 5 illustrates the row reading circuit of the neighbour of the sensor array of existing correlated sampling technology, wherein neighbour
Two column read pixel and share amplifying circuit (k times), integrating circuit, adc circuit.Here starting point is the neighbour of sensor array
Two column read-out channels sense equal noise signal, and the hypothesis is for noise caused by sensor array preparation, driving method etc.
It is set up substantially with interference signal.Two column of this neighbour read pixel and share amplifying circuit (k times), integrating circuit and adc circuit, lead to
It crosses and the two sensor signals of this neighbour is made with poor residual quantity between detection sensor array physical quantity, such as capacitance touching control array
In, the difference of the capacitor of corresponding pixel portion is arranged with a line neighbour two.This sensor array sense architecture can be solved preferably
The problem of reading noisiness, but the problem that read output signal homogeneity question and read output signal intensity for caused by RC retardation ratio are weak
Do not act on.
Fig. 6 illustrates the framework of the row reading circuit of the neighbour of the sensor array for existing correlated sampling technology, leads to
It crosses and increases the influence that coupling ring reduces few RC retardation ratio；Increase integrated intensity by phase inverter feedback control loop.The framework is in sensing battle array
Coupling link is increased between column and reading circuit, while increasing phase inverter feedback control loop in integrator front-end.Pass through coupling
The synergistic effect of link and the not overlapping clock signal of this two-way of CK and XCK, rising edge and failing edge corresponding to TX signal sample
The sensor output arrived, is respectively completed signal integration.This sensor array sense architecture is for inhibiting to read noisiness, being promoted and read
Signal strength has certain effect out, but read output signal homogeneity question caused by RC retardation ratio and how further to promote reading
Signal strength out, it is also necessary to new circuit design.
Fig. 7 illustrates the structure of the row reading circuit of the sensor array of four multiplying power of the correlated sampling integral of the application, newly
Cross-coupling link respond the rising edge and failing edge of TX signal respectively so that the rising edge of TX signal and failing edge are real respectively
Existing 2 multiplying powers integral realizes that four multiplying powers of sensor array signal integrate output in total.The structure has cross-coupling link, leads to
The time cooperation of overcoupling link and cross-coupling link, the sensor that the rising edge corresponding to TX signal samples, which exports, to be realized
2 multiplying powers integral, while the sensor output that the failing edge for corresponding to TX signal samples also realizes that 2 multiplying powers integrate, thus in total
Realize that four multiplying powers of sensor array signal integrate output.
Fig. 8 is in the row reading circuit for the sensor array that four multiplying power of correlated sampling of the application integrates, based on capacitor reality
A kind of specific embodiment of existing coupling link.It is not only in that structure is simple using capacity coupled advantage, and capacitive coupling
Fast speed, the non-uniform problem of read output signal caused by RC retardation ratio can be inhibited to a certain extent.Capacitive coupling may
It is disadvantageous in that the whole of signal amplitude is reduced；But for the entirety of signal amplitude reduce, entire sensor array it is equal
Evenness is higher.
Fig. 9 is in the row reading circuit for the sensor array that four multiplying power of correlated sampling of the application integrates, based on double CMOS
A kind of specific embodiment for the coupling link that cross-coupling switch is realized.CMOS cross-coupling switch can cooperate TX signal,
By overturning the polarity of sensor array reading circuit input signal, the output valve of sensor array reading circuit is promoted.
Below will be by taking large scale capacitance touching control array as an example, the specific specific implementation side for illustrating other links of reading circuit
Method.
The first of the row reading circuit for the sensor array that four multiplying power of correlated sampling that Figure 10 illustrates the application integrates is real
Apply example.The reading circuit of this novel large scale sensor array provided by the invention, if including main line parallel channel, per all the way simultaneously
Row of channels includes Differential Detection module, all the way signal cross coupling module and difference integration module all the way all the way；Differential Detection
Module, signal cross coupling module and difference integration module are sequentially connected in series；The input terminal connection large scale of Differential Detection module passes
Feel the output end of array；Differential Detection module is used to being converted to the charge signal that large scale sensor array exports into first voltage letter
Number and be uploaded to signal cross coupling module again after carrying out noise elimination；The first electricity that signal cross coupling module is used to upload
Pressure signal is converted to positive phase voltage signal and all the way minus phase voltage signal all the way, and is uploaded to difference integration module simultaneously；
The positive phase voltage signal and minus phase voltage signal that difference integration module is used to upload carry out difference integral, and are output to big
The subsequent peripheral signal processing circuit of size sensor array.
In the specific implementation, Differential Detection module can be made of calculus of differences amplifying circuit；Difference integration module is served as reasons
The difference integrating circuit that operational amplifier is constituted.
As shown in Figure 10 for the circuit theory schematic diagram of the first embodiment of reading circuit, the MOS based on clock control
Switch: in the present embodiment, it is touch screen equivalent circuit, the Differential Detection of the leftmost side respectively that circuit, which includes four parts, in figure
Modular circuit, signal cross coupling module circuit and difference integration module circuit.
Touch screen equivalent circuit is for simulating the signal for having latter two read-out channel of touch behavior to be exported on screen, i.e.,
Vin1 and Vin2.
Differential Detection module includes the first input capacitance of Differential Detection C1, the second input capacitance of Differential Detection C2, difference inspection
The first input resistance R1, the second input resistance of Differential Detection R2, the first filter capacitor of Differential Detection C3, Differential Detection second is surveyed to filter
Wave capacitor C4 and differential check amplifier OP1；The two paths of signals of large scale sensor array output, (Vin1) passes through concatenated all the way
The first input capacitance of Differential Detection is input to input terminal one end of Differential Detection operational amplifier, and another way (Vin2) passes through series connection
The second input capacitance of Differential Detection be input to the input terminal other end of Differential Detection operation amplifier, Differential Detection first inputs electricity
Resistance is connected between input terminal one end of differential check amplifier and the output end of differential check amplifier, and Differential Detection second is defeated
Enter resistance to be connected between the input terminal other end of differential check amplifier and ground；The first filter capacitor of Differential Detection is connected in parallel on difference
Sorting surveys the both ends of the first input resistance, and the second filter capacitor of Differential Detection is connected in parallel on the two of the second input resistance of Differential Detection
End；The output end of differential check amplifier is the output end of Differential Detection module.
Difference integration module includes difference integral first resistor R5, difference integral second resistance R6, the first electricity of difference integral
Hold C5, difference integrates the second capacitor C6 and difference integral operation amplifier OP3；The input cathode string of difference integral operation amplifier
Join difference and integrates the first input resistance；The input anode series connection difference of difference integral operation amplifier integrates the second input resistance；
Difference integral first is concatenated between input cathode and the output end of difference integral operation amplifier of difference integral operation amplifier
Capacitor；The input anode of difference integral operation amplifier integrates the second capacitor with difference is concatenated between ground；Signal cross coupled mode
The minus phase voltage signal connection difference of block output integrates first resistor, the positive phase voltage letter of signal cross coupling module output
Number connection difference integrate second resistance.
Signal cross coupling module then includes the first rectification circuit of signal cross (including switch transistor T 1 and T2 in figure), signal
Intersect the second rectification circuit (in figure include switch transistor T 3 and T4) and signal cross negater circuit (including amplifier OP2 in figure, and
Resistance R3 and R4)；The first voltage signal of Differential Detection module output after the first rectifier circuit rectifies of signal cross by converting
Be negative phase voltage signal (voltage signal of D point in figure), and is output to difference integration module；The of Differential Detection module output
One voltage signal, which also passes through the progress of signal cross negater circuit, reversely (can zoom in or out while reversed, specifically may be used
To adjust the resistance value of R3 and R4) after, then by being converted to positive phase voltage signal (figure after the second rectifier circuit rectifies of signal cross
The voltage signal of middle C point), and it is output to difference integrating circuit；In figureWithFor the driving signal of switching tube.
In the present embodiment, the first rectification circuit of signal cross and the second rectification circuit of signal cross are all made of by transistor
The active rectifying circuit of composition.
It is as shown in figure 11 the circuit sequence schematic illustration of the first embodiment of reading circuit of the invention: works as sensitive face
When having touch behavior generation on plate, the size of mutual capacitance cm1 and cm2 are unequal, two-way detection at this time signal Vin1's and Vin2
Amplitude is unequal, amplifies again after being subtracted each other by amplifier OP1, obtains a touch signal in node A (as shown in the A in Figure 10).
Touch signal is divided into two-way, and another way obtains a reverse phase after the see-saw circuit being made of amplifier OP2, in node B
Signal, setting resistance R3 and resistance R4 is equal in magnitude, so the amplitude of inversion signal is also equal (as shown in the B in Figure 11).In
In a cycle, whenFor high level,When for low level, the positive spiking of node A is input to by switch transistor T 2
The negative sense spiking of node D, node B are input to node C by switch transistor T 3；WhenFor low level,When for high level,
The negative sense spiking of node A is input to node C by switch transistor T 1, and the positive spiking of node B is defeated by switch transistor T 4
Enter to node D.Therefore, in one cycle, there are two negative sense spikings to be input to integrator by node C, and there are two just by node D
Integrator is input to spiking.After handling touch signal by signal cross coupling module, by positive point in same time
Peak-to-peak signal and negative sense spiking quantity increase to original twice, and after being integrated by difference, integrator output value increase is original
4 times.In the same time, by increasing integrated signal amount to increase the scheme of integrator output value, the big ruler of effective solution
For very little sensor array after RC retardation ratio increase the problem of quantity of electric charge reduction, sensitivity is higher, is suitable for large scale sensor array.
It is as shown in figure 12 the circuit theory schematic diagram of the second embodiment of reading circuit of the invention, is based on more two poles
Control system: equally including touch screen equivalent circuit, Differential Detection modular circuit, the signal cross coupling module for being the leftmost side in figure
Circuit and difference integration module circuit.Moreover, touch screen equivalent circuit, Differential Detection modular circuit and difference integration module circuit
It is identical as the circuit in Figure 10.
Signal cross coupling module then includes the first rectification circuit of signal cross (including diode D1 and D2 in figure), signal
Intersect the second rectification circuit (in figure include diode D3 and D4) and signal cross negater circuit (including amplifier OP2 in figure, and
Resistance R3 and R4)；The first voltage signal of Differential Detection module output after the first rectifier circuit rectifies of signal cross by converting
Be negative phase voltage signal (voltage signal of D point in figure), and is output to difference integration module；The of Differential Detection module output
One voltage signal, which also passes through the progress of signal cross negater circuit, reversely (can zoom in or out while reversed, specifically may be used
To adjust the resistance value of R3 and R4) after, then by being converted to positive phase voltage signal (figure after the second rectifier circuit rectifies of signal cross
The voltage signal of middle C point), and it is output to difference integrating circuit；In figureWithFor the driving signal of switching tube.
In the present embodiment, the first rectification circuit of signal cross and the second rectification circuit of signal cross are all made of by diode
The inactive rectification circuit of composition.
It is as shown in figure 13 the circuit sequence schematic illustration of the second embodiment of reading circuit of the invention: when sensing battle array
When having trigger event generation on column, the size of mutual capacitance cm1 and cm2 are unequal, two-way detection at this time signal Vin1's and Vin2
Amplitude is unequal, amplifies again after being subtracted each other by amplifier OP1, obtains a touch signal in node A (as shown in the A in Figure 12).
Touch signal is divided into two-way, and another way obtains a reverse phase after the see-saw circuit being made of amplifier OP2, in node B
Signal, setting resistance R3 and resistance R4 is equal in magnitude, so the amplitude of inversion signal is also equal (as shown in the B in Figure 12).In
In a cycle, the positive spiking of node A is input to node C by diode D1, and the negative sense spiking of node B passes through
Diode D4 is input to node D；The negative sense spiking of node A is input to node D, the forward direction point of node B by diode D2
Peak-to-peak signal is input to node C by diode D3.Therefore, in one cycle, node C is input to there are two negative sense spiking
Integrator, there are two positive spikings to be input to integrator by node D.Touch signal is handled by signal cross coupling module
Afterwards, positive spiking and negative sense spiking quantity are increased into original twice in same time, after being integrated by difference,
It is original 4 times that integrator output value, which increases,.In the same time, by increasing integrated signal amount to increase the side of integrator output value
Case, the effective solution large scale sensor array the problem of quantity of electric charge is reduced after the RC retardation ratio increase, sensitivity is higher, is applicable in
In the high-resolution sensor array of large scale.
It is as shown in figure 14 the circuit theory schematic diagram of the 3rd embodiment of reading circuit of the invention: first with Figure 10
Unlike embodiment, the driving signal (driving signal of sensor array) of the embodiment in this figure is sine wave.
It is as shown in figure 15 the circuit sequence schematic illustration of the 3rd embodiment of reading circuit of the invention: when sensing battle array
When having triggering behavior on column, the size of mutual capacitance cm1 and cm2 are unequal, the amplitude of two-way detection at this time signal Vin1 and Vin2
It is unequal, amplify again after being subtracted each other by amplifier OP1, obtain a touch signal in node A (as shown in the A in Figure 14).It touches
Signal is divided into two-way, and another way obtains an inversion signal after the see-saw circuit being made of amplifier OP2, in node B,
It is equal in magnitude that resistance R3 and resistance R4 is set, so the amplitude of inversion signal is also equal (as shown in the B in Figure 14).In a week
In phase, whenFor high level,When for low level, the positive spiking of node A is input to node D by switch transistor T 2,
The negative sense spiking of node B is input to node C by switch transistor T 3；WhenFor low level,When for high level, node A
Negative sense spiking node C is input to by switch transistor T 1, the positive spiking of node B is input to section by switch transistor T 4
Point D.Therefore, in one cycle, there are two negative sense spikings to be input to integrator by node C, and there are two positive spikes by node D
Signal is input to integrator.After handling touch signal by signal cross coupling module, by positive spiking in same time
Increase to original twice with negative sense spiking quantity, after integrating by difference, it is original 4 times that integrator output value, which increases,.
The advantage of the embodiment of the present invention three is:
1) by cross-coupling module, the integrator output value of reading circuit in same time is effectively increased, so that greatly
The sensitivity of size sensor array is higher, output intensity is bigger.
2) by sinusoidal signal driving method, pass through the cooperation of cross-coupling module, it is suppressed that in large scale sensor array
Read output signal intensity problem of non-uniform caused by RC retardation ratio.It influences, can be equivalent to caused by RC retardation ratio on TX and RX line
Low-pass filtering.Due to including spectrum information abundant in TX square-wave signal, therefore it be easy to cause in sensor array different corners and passes
Feel the difference of signal.And in sinusoidal signal driving method, the frequency spectrum that RX can be made to receive is more pure, this is advantageous for subtracting
The heterogeneity of few sensor array.
3) in the reading out structure of traditional sensor array, as schematically shown in Figure 6, due to sinusoidal signal and non-overlapping sampling
ClockWithTiming alignment issues, be readily incorporated the wave distortion of read output signal.The cross-coupling module of the present embodiment,
No matter forSample phase, stillSample phase, input signal and its inversion signal are synchronously input to integral
Positive-negative input end of device.The negative function of the positive-negative input end of integrator is then passed through, the reading of sensor array can be overcome
The problem of dtmf distortion DTMF of signal, this advantageously reduces the heterogeneity of sensor array.
As shown in figure 16 it is the simulation result schematic diagram of reading circuit of the invention: as can be seen that in the same time, this
The circuit that invention proposes has integrated 2 times more than traditional circuit, while integrated value improves 4 times, effective solution large scale biography
Array is felt after RC retardation ratio increase the problem of quantity of electric charge reduction, and sensitivity is higher, is suitable for large-sized high-resolution and senses
Array.
It is as shown in figure 17 the experimental result schematic diagram of reading circuit of the invention: as can be seen that electricity proposed by the present invention
Road has integral to export in each half period, has integrated than traditional circuit 2 times more, has been consistent with simulation result.This circuit is effective
Solve the problems, such as large scale sensor array after RC retardation ratio increase the quantity of electric charge reduce, sensitivity is higher, be suitable for big ruler
Very little high-resolution sensor array.
Claims (9)
1. a kind of reading circuit of novel large scale sensor array, it is characterised in that if including main line parallel channel, often all the way simultaneously
Row of channels includes Differential Detection module, all the way signal cross coupling module and difference integration module all the way all the way；Differential Detection
Module, signal cross coupling module and difference integration module are sequentially connected in series；The input terminal connection large scale of Differential Detection module passes
Feel the output end of array；Differential Detection module is used to being converted to the charge signal that large scale sensor array exports into first voltage letter
Number and be uploaded to signal cross coupling module again after carrying out noise elimination；The first electricity that signal cross coupling module is used to upload
Pressure signal is converted to positive phase voltage signal and all the way minus phase voltage signal all the way, and is uploaded to difference integration module simultaneously；
The positive phase voltage signal and minus phase voltage signal that difference integration module is used to upload carry out difference integral, and are output to big
The subsequent peripheral signal processing circuit of size sensor array.
2. the reading circuit of novel large scale sensor array according to claim 1, it is characterised in that the difference inspection
Module is surveyed to be made of calculus of differences amplifying circuit.
3. the reading circuit of novel large scale sensor array according to claim 2, it is characterised in that the difference inspection
Surveying module includes the first input capacitance of Differential Detection, the second input capacitance of Differential Detection, the first input resistance of Differential Detection, difference
Detect the second input resistance, the first filter capacitor of Differential Detection, the second filter capacitor of Differential Detection and differential check amplifier；Greatly
The two paths of signals of size sensor array output is input to Differential Detection fortune by concatenated the first input capacitance of Differential Detection all the way
Input terminal one end of amplifier is calculated, another way is input to Differential Detection operation by concatenated the second input capacitance of Differential Detection and puts
The big input terminal other end, the first input resistance of Differential Detection is connected to input terminal one end of differential check amplifier and difference is examined
Between the output end of amplifier, the second input resistance of Differential Detection be connected to the input terminal other end of differential check amplifier with
Between ground；The first filter capacitor of Differential Detection is connected in parallel on the both ends of the first input resistance of Differential Detection, and Differential Detection second filters
Capacitor is connected in parallel on the both ends of the second input resistance of Differential Detection；The output end of differential check amplifier is Differential Detection module
Output end.
4. the reading circuit of novel large scale sensor array according to claim 1, it is characterised in that the difference product
Sub-module is the difference integrating circuit being made of operational amplifier.
5. the reading circuit of novel large scale sensor array according to claim 4, it is characterised in that the difference product
Sub-module includes difference integral first resistor, difference integral second resistance, difference integral first capacitor, difference the second capacitor of integral
With difference integral operation amplifier；The input cathode series connection difference of difference integral operation amplifier integrates the first input resistance；Difference
The input anode series connection difference of integral operation amplifier is divided to integrate the second input resistance；The input of difference integral operation amplifier is negative
Difference integral first capacitor is concatenated between pole and the output end of difference integral operation amplifier；Difference integral operation amplifier it is defeated
Enter anode and integrates the second capacitor with difference is concatenated between ground；The minus phase voltage signal connection of signal cross coupling module output is poor
Divide integral first resistor, the positive phase voltage signal connection difference of signal cross coupling module output integrates second resistance.
6. the reading circuit of novel large scale sensor array described according to claim 1~one of 5, it is characterised in that described
Signal cross coupling module includes that the first rectification circuit of signal cross, the second rectification circuit of signal cross and signal cross are reversely electric
Road；The first voltage signal of Differential Detection module output is by being converted to minus phase electricity after the first rectifier circuit rectifies of signal cross
Signal is pressed, and is output to difference integration module；It is reversed that the first voltage signal of Differential Detection module output also passes through signal cross
After circuit carries out reversely, then by being converted to positive phase voltage signal after the second rectifier circuit rectifies of signal cross, and it is output to
Difference integrating circuit.
7. the reading circuit of novel large scale sensor array according to claim 6, it is characterised in that the signal is handed over
Pitching the first rectification circuit is the inactive rectification circuit being made of diode；Second rectification circuit of signal cross is by two poles
The inactive rectification circuit that pipe is constituted.
8. the reading circuit of novel large scale sensor array according to claim 6, it is characterised in that the signal is handed over
Pitching the first rectification circuit is the active rectifying circuit being made of switching tube；Second rectification circuit of signal cross is by switching
The active rectifying circuit that pipe is constituted.
9. a kind of large scale sensor array, it is characterised in that sense battle array including novel large scale described in one of claim 1~8
The reading circuit of column.
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