CN110391324A - Light-emitting component and electronic device - Google Patents
Light-emitting component and electronic device Download PDFInfo
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- CN110391324A CN110391324A CN201811133544.XA CN201811133544A CN110391324A CN 110391324 A CN110391324 A CN 110391324A CN 201811133544 A CN201811133544 A CN 201811133544A CN 110391324 A CN110391324 A CN 110391324A
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- 239000000758 substrate Substances 0.000 claims abstract description 49
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- 238000005538 encapsulation Methods 0.000 description 3
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- 239000002096 quantum dot Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a kind of light-emitting components comprising a package substrate, one first light-emitting diode chip for backlight unit, an encapsulating material and a photoresist layer.Wherein, light-emitting diode chip for backlight unit is arranged on package substrate, and encapsulating material is set on light-emitting diode chip for backlight unit and package substrate, and photoresist layer is set on encapsulating material and has one first aperture.In overlook direction, the area of the first aperture of photoresist layer is less than the area of light-emitting component.
Description
Technical field
The present invention relates to a kind of light-emitting component and relevant electronic device, in particular to a kind of hair that can improve luminous efficiency
Optical element and relevant electronic device.
Background technique
Public's display (public information display, PID) is a kind of display equipment for being usually used in open air,
In order to improve the case where causing picture contrast to reduce because of reflection sunlight, shine used in general public's display
Diode (light emitting diode, LED) all uses black encapsulation material.However, since LED chip is by black encapsulation
Material covering, generated light has considerable proportion and is absorbed by black encapsulating material, thus reduces luminous efficiency, makes
The overall brightness of public's display is lower.Therefore the side that the light service efficiency of public's display is still industry research and development how is improved
To.
Summary of the invention
One embodiment of the invention provides a kind of light-emitting component comprising a package substrate, one first light emitting diode
Chip, an encapsulating material and a photoresist layer.Wherein, light-emitting diode chip for backlight unit is arranged on package substrate, and encapsulating material is set
It is placed on light-emitting diode chip for backlight unit and package substrate, and photoresist layer is set on encapsulating material and has one first aperture.In
In overlook direction, the area of the first aperture of photoresist layer is less than the area of light-emitting component.
Another embodiment of the present invention provides a kind of electronic device comprising a main substrate and an at least light-emitting component.
Main substrate includes a circuit and multiple connection gaskets, and circuit and multiple connection gaskets are arranged at main substrate surface.Light-emitting component setting
On main substrate and it is electrically connected at least one of which of multiple connection gaskets.Light-emitting component includes a package substrate, one luminous two
Pole pipe chip, an encapsulating material and a photoresist layer.Wherein, light-emitting diode chip for backlight unit is arranged on package substrate, package material
Material is set on light-emitting diode chip for backlight unit and package substrate, and photoresist layer is set on encapsulating material and has an aperture.In
In overlook direction, the area of the aperture of photoresist layer is less than the area of light-emitting component.
Detailed description of the invention
Fig. 1 is the diagrammatic cross-section of the first embodiment of light-emitting component of the present invention
Fig. 2 is the schematic top plan view of the first embodiment of light-emitting component of the present invention.
Fig. 3 is the diagrammatic cross-section of the second embodiment of light-emitting component of the present invention.
Fig. 4 is the schematic top plan view of the alternate embodiment of the second embodiment of light-emitting component of the present invention.
Fig. 5 is the schematic top plan view of another alternate embodiment of the second embodiment of light-emitting component of the present invention.
Fig. 6 is the schematic top plan view of the 3rd embodiment of light-emitting component of the present invention.
Fig. 7 is the diagrammatic cross-section of the fourth embodiment of light-emitting component of the present invention.
Fig. 8 is the diagrammatic cross-section of the 5th embodiment of light-emitting component of the present invention.
Fig. 9 is the schematic top plan view of electronic device of the present invention.
Figure 10 is the partial enlargement diagram of electronic device of the present invention.
Description of symbols: 100- light-emitting component；102- package substrate；The upper surface 102s-；104,104R,104G,
104B- light-emitting diode chip for backlight unit；106- encapsulating material；106a- micro-structure；108- photoresist layer；1081- reflection layer；1082-
Light absorbing layer；108a, 108b, 108c- aperture；108s- inner sidewall；110- particle；200- electronic device；202- main substrate；
204- circuit；206- connection gasket；A1, A2, A3- area；L1- forward direction light；The side L2- is to light；The direction Z-；θ-within angle.
Specific embodiment
The contents of the present invention are described in detail below in conjunction with specific embodiments and the drawings, and in order to make in of the invention
Appearance is more clear and understandable, and hereafter each attached drawing may be simplified schematic diagram, and element therein may be not necessarily drawn to scale.
Also, the quantity of each element in attached drawing and size are only to illustrate, and are not intended to limit the scope of the present invention.
The present invention will use some vocabulary in the whole text to censure particular element in specification and the attached claims.This field
It should be understood to the one skilled in the art that electronic equipment set manufacturer may censure identical element with different titles, and herein do not anticipate
Figure distinguishes the element that those functions are identical but title is different.When in the present specification use term " including ", " including " and/or "
With " when, which specify the presence of the feature, region, step, operation and/or element, but be not precluded it is one or more its
The presence or increase of his feature, region, step, operation, element and/or combination thereof.When the element of such as layer or region is referred to as
In another element (or its modification) " upper " or when extending to another element " upper ", it can directly prolong on another element or directly
There may also be the elements of insertion between reaching on another element, or both.On the other hand, when title one element " directly existing " is another
On one element (or its modification) or when " direct " extends to another element " upper ", insertion element is not present between the two.Also, work as
One element is referred to as " coupling " to when another element (or its modification), it can be directly connected to another element or by one or more
A interelement grounding connection (such as electrical connection) arrives another element.
It should be noted that hereinafter technical solution provided by different embodiments can be replaced mutually, combines or be used in mixed way,
To be constituted another embodiment in the case where not violating spirit of that invention.
Fig. 1 and Fig. 2 are please referred to, Fig. 1 is the diagrammatic cross-section of the first embodiment of light-emitting component of the present invention, and Fig. 2 is this hair
The schematic top plan view of the first embodiment of bright light-emitting component.The light-emitting component 100 of the present embodiment is a LED encapsulation body,
It includes a package substrate 102, a light emitting diode (LED) chip 104, an encapsulating material 106 and a photoresist layer 108.
Package substrate 102 may include insulation material layer and conductive material layer (not drawing), and wherein conductive material layer can be in package substrate
Conducting wire, electrode, connection gasket or other suitable elements are formed in 102, but not limited to this.The package substrate 102 of the present embodiment
Surface color be exemplified as light color or white etc. can improve light reflectance color or package substrate 102 surface it is main
With the production of high reflection material, but not limited to this.Light-emitting diode chip for backlight unit 104 is arranged on 102 surface of package substrate, and bottom can
The conducting wire in package substrate 102 is electrically connected by solder or other suitable conductive materials.The covering of encapsulating material 106 luminous two
Pole pipe chip 104 and 102 surface of package substrate, can protect or fix light-emitting diode chip for backlight unit 104,.Encapsulating material 106 can wrap
Transparent or high-penetration rate material is included, transparent or high-penetration rate material herein refers to and emitted in respective leds chip
Wave-length coverage be transparent or high-penetration rate material, such as may include epoxy (epoxy based resin), silicon
Or other suitable materials, the range of refractive index can be between 1.4 to 1.7 (1.4≤refractive index≤1.7), or between 1.5
Between to 1.6 (1.5≤refractive index≤1.6), but not limited to this.Photoresist layer 108 covers and surrounds encapsulating material 106, and
Photoresist layer 108 has an aperture 108a in the upper surface relative to encapsulating material 106.In overlook direction, the present embodiment
The aperture 108a of photoresist layer 108 overlaps at least partially with light-emitting diode chip for backlight unit 104, that is, at least part is by luminous two
The light that pole pipe chip 104 issues directly is projected from aperture 108a without reflection.In the present embodiment, the area of aperture 108a
(being indicated in Fig. 1 with symbol A1) is less than the area (indicating in Fig. 1 with symbol A2) of package substrate 102, and in other embodiments,
Area A1 of the aperture 108a in overlook direction is less than the area of 100 packaging body of light-emitting component.In the present embodiment, aperture 108a
For circle, but not limited to this, and in other embodiments, aperture 108a can have other various suitable geometries, example
Such as square.
In the present embodiment, photoresist layer 108 has double-layer structure, including a reflection layer 1081 and a light absorbing layer
1082, wherein reflection layer 1081 is arranged between light absorbing layer 1082 and encapsulating material 106.Reflection layer 1081 includes to have
The material of high reflectance, such as reflectivity can be between 70% to 100% (70%≤reflectivity < 100%), in other reality
It applies in example, reflectivity then can be between 90% to 100% (90%≤reflectivity < 100%).Highly reflective material can be effectively
The light reflection on its surface will be marched to, color is exemplified as light color or white, and but not limited to this.
The material of light absorbing layer 1082 is exemplified as low reflectivity material, can effectively inhale the light for marching to its surface
It receives, color is exemplified as dark or black, may be, for example, black glue, but not limited to this.For example, light absorbing layer 1082 is anti-
The rate of penetrating can be between 0% to 30% (0% < reflectivity≤30%), in a further embodiment, and reflectivity then can be between
Between 10% to 0% (0% < reflectivity≤10%), but not limited to this.In certain embodiments, 1082 surface of light absorbing layer
The rough surface that light can be allowed to scatter can also be generated via roughening treatment, to further decrease light reflectance.Light reflection
Layer 1081 can be formed in 106 surface of encapsulating material via twice ejaculating forming or respectively with spraying method with light absorbing layer 1082,
But reflection layer 1081 and the generation type of light absorbing layer 1082 are without being limited thereto.It can be seen from the above, the double-deck knot of photoresist layer 108
Structure has internal layer and outer layer, and wherein internal layer is reflection layer 1081, and outer layer is light absorbing layer 1082.Since photoresist layer 108 has
Having aperture 108a and internal layer is reflection layer 1081, some light L1 that light-emitting diode chip for backlight unit 104 is issued can directly from
The aperture 108a of photoresist layer 108 is projected, and another part light L2 that light-emitting diode chip for backlight unit 104 is issued can be anti-via light
Primary event, secondary reflection or the multiple reflections of layer 1081 are penetrated, then are projected via aperture 108a.Therefore, it is arranged in photoresist layer
Light utilization efficiency can be improved in the reflection layer 1081 of 108 internal layers, then area of arranging in pairs or groups is designed less than the aperture 108a of package substrate 102
Light can be made to concentrate at aperture 108a light out, further increase light utilization efficiency.On the other hand, light-emitting component 100 is outermost
The light for exposing to 100 outer surface of light-emitting component can be absorbed in the light absorbing layer 1082 of side, when 100 element of light-emitting component is applied
In public's display or any outdoor display equipment or the strong electronic device of environment light source, light absorbing layer 1082 can effectively subtract
The reflection of few environment light improves picture comparison.
Light-emitting diode mentioned by the present invention (LED) include inorganic light-emitting diode element (normal LED),
Secondary millimeter inorganic light-emitting diode element (mini LED), miniature inorganic light-emitting diode element (micro LED), organic light emission
Diode element (OLED), light emitting diode with quantum dots element (QLED) or combinations thereof, but not limited to this.In the present embodiment
Be by taking secondary millimeter inorganic light-emitting diode element as an example, and in following other embodiments and change type, light-emitting diode
LED also by taking secondary millimeter inorganic light-emitting diode element as an example, is repeated no more.
Electronic device of the invention is not limited with above-described embodiment.It will hereafter continue to disclose other embodiments of the invention
Or variation shape, it to simplify the explanation and highlights each embodiment or changes the difference between shape, hereinafter marked using identical label
Similar elements, and the repeated section will not be repeated repeats.In addition, each film material and thickness and processing procedure in subsequent embodiment of the present invention
The condition of step all can refer to first embodiment, therefore repeat no more.
Referring to FIG. 3, Fig. 3 is the diagrammatic cross-section of the second embodiment of light-emitting component of the present invention.The present embodiment and first
The main difference of embodiment be in the present embodiment light-emitting component 100 include three light-emitting diode chip for backlight unit 104R, 104G,
104B is set to 102 surface of package substrate, and light-emitting diode chip for backlight unit 104R, 104G, 104B are that can produce different colours respectively
The light-emitting diode chip for backlight unit of light, such as feux rouges, green light and blue light can be generated respectively, but not limited to this.When the present embodiment
Light-emitting component 100 is applied in electronic device, and light-emitting diode chip for backlight unit 104R, 104G, 104B can be made via package substrate 102
In conductive material layer be electrically connected external circuit, it is same respectively with external circuit control light-emitting diode chip for backlight unit 104R, 104G, 104B
When or do not shine simultaneously, such as light-emitting component 100 is made to generate feux rouges, green light or blue light respectively in different time, alternatively, can make
The two of them of light-emitting diode chip for backlight unit 104R, 104G, 104B or three shine simultaneously.In the present embodiment, in overlook direction
On, the area A1 of the aperture 108a of photoresist layer 108 is less than the area of light-emitting component 100 (with the area A2 table of package substrate 102
Show), then the setting of arrange in pairs or groups reflection layer 1081 and encapsulating material 106, when its of light-emitting diode chip for backlight unit 104R, 104G, 104B
In two or three simultaneously shine when, the light issued can be reflected back encapsulating material 106 via reflection layer 1081, then pass through
It is projected by the lesser aperture 108a of area, therefore light can be carried out light mixing before being projected by light-emitting component 100, improves color table
It is existing.The area A1 of the aperture 108a of the present embodiment be designed as in overlook direction be greater than light-emitting diode chip for backlight unit 104R, 104G or
The area A3 of 104B, but in other embodiments, the area A1 of aperture 108a is also smaller than light-emitting diode chip for backlight unit 104R, 104G
Or the area A3 of 104B.Furthermore, it is possible to according to the luminous efficiency of light-emitting diode chip for backlight unit 104R, 104G, 104B, color representation or
The difference of human eye perceived effect designs the position of light-emitting diode chip for backlight unit 104R, 104G, 104B relative to aperture 108a.Example
Such as, if the luminous efficiency of light-emitting diode chip for backlight unit 104G is relatively lower than light-emitting diode chip for backlight unit 104R, 104B or human eye for hair
The light color perceptibility that luminous diode chip 104G is issued is lower, then may be designed to the light-emitting diodes tube core in overlook direction
Piece 104G has biggish area and aperture 108a to overlap, and light-emitting diode chip for backlight unit 104R, 104B in overlook direction with aperture
The area that 108a overlaps is smaller, and most of light that light-emitting diode chip for backlight unit 104G is issued is directly by aperture 108a
It projects, and most of in the light that light-emitting diode chip for backlight unit 104R, 104B are issued is then first to reflect via reflection layer 1082
It is just projected afterwards by aperture 108a, the color representation of different colours can be homogenized accordingly.
Referring to FIG. 4, Fig. 4 is the schematic top plan view of the alternate embodiment of the second embodiment of light-emitting component of the present invention.In
In this alternate embodiment, at least part of the projection of aperture 108a and light-emitting diode chip for backlight unit 104R, 104G, 104B overlaps.
Referring to FIG. 5, Fig. 5 is the schematic top plan view of another alternate embodiment of the second embodiment of light-emitting component of the present invention.It is sent out in Fig. 5
The aperture 108a of optical element 100 can be greater than the area summation of light-emitting diode chip for backlight unit 104R, 104G, 104B, and in vertical view side
Upward light-emitting diode chip for backlight unit 104R, 104G, 104B are all located in aperture 108a.This design can make light-emitting diode chip for backlight unit
Most of light that 104R, 104G, 104B are issued directly is projected by aperture 108a and therefore improves emitting brightness.
Referring to FIG. 6, Fig. 6 is the schematic top plan view of the 3rd embodiment of light-emitting component of the present invention.The present embodiment and Fig. 3,
Fig. 4 and embodiment illustrated in fig. 5 and the difference of change type essentially consist in photoresist layer 108 include three aperture 108a, 108b,
108c, position are corresponding with light-emitting diode chip for backlight unit 104G, 104B, 104R respectively.Also, in the present embodiment, aperture 108a,
The area of 108b, 108c in overlook direction is all greater than the area of light-emitting diode chip for backlight unit 104G, 104B, 104R, and aperture
108a, 108b, 108c and light-emitting diode chip for backlight unit 104G, 104B, 104R at least partly overlap.Therefore light-emitting diode chip for backlight unit
The most of light of 104G, 104B, 104R issued can directly be projected by aperture 108a, 108b, 108c, least a portion of light
It is projected again by aperture 108a, 108b, 108c after first being reflected via the reflection layer 1081 of photoresist layer 108, this design can be with
Improve whole emitting brightness.In the alternate embodiment of the present embodiment, the area of aperture 108a, 108b, 108c are smaller than luminous
The projected area of diode chip for backlight unit 104G, 104B, 104R.When aperture 108a, 108b, 108c are shared by the top of light-emitting component 100
Area is smaller, that is, indicates larger in 1082 occupied area of light absorbing layer at 100 top of light-emitting component, this design can reduce reflection
The probability of ambient light improves picture contrast.
Referring to FIG. 7, Fig. 7 is the diagrammatic cross-section of the fourth embodiment of light-emitting component of the present invention.The present embodiment shines
Diode chip for backlight unit 104G, 104B, 104R can refer to Fig. 4 in the relative arrangement of overlook direction.The present embodiment and aforementioned implementation
The main difference point of example is in encapsulating material 106 can be doped with particle 110, to further increase light in encapsulating material 106
In light mixing effect, this particle 110 may include that scattering particles, diffusion particle, reflective particle, refracting particles, other are adjustable
The combination of the particle of light type or above-mentioned particle, but not limited to this.In some embodiments, it can also be adulterated in encapsulating material 106
The material of the adjustable light color such as quantum dot, fluorescent powder or phosphor powder.In addition, the encapsulating material 106 of the present embodiment is in quilt
The part of the surface of aperture 108a exposure can have micro-structure 106a, such as with rule or irregular texture or relief pattern.
Micro-structure 106a can increase dispersion effect, so that being less susceptible to reflection environment light at aperture 108a.The particle 110 of the present embodiment
Can individually or simultaneously it be applied in other embodiments of the invention and change type with micro-structure 106a, such as in some embodiments
In, the encapsulating material 106 of light-emitting component 100 may include particle 110 but surface does not have micro-structure 106a, and in other realities
It applies in example, 106 surface of encapsulating material of light-emitting component 100 can have micro-structure 106a, but without doping particle 110.
Referring to FIG. 8, Fig. 8 is the diagrammatic cross-section of the 5th embodiment of light-emitting component of the present invention.With previous embodiment phase
Compared with the main difference of the present embodiment is the inner sidewall 108s of the photoresist layer 108 of light-emitting component 100 relative to package substrate
Upper surface 102s has an inclination angle, and in some embodiments, the upper surface 102s and photoresist layer of package substrate 102
Within angle θ between 108 inner sidewall 108s can be greater than 90 degree and be less than 180 degree.This design can reduce light in package material
Order of reflection in material 106, can be projected via less order of reflection by aperture 108a, thus improve luminous efficiency.Another
In outer embodiment, the within angle θ between the upper surface 102s of package substrate 102 and the inner sidewall 108s of photoresist layer 108 can
Between 0 degree and 90 degree (0 degree < within angle θ≤90 degree).
Fig. 9 and Figure 10 are please referred to, Fig. 9 is the schematic top plan view of electronic device of the present invention, and Figure 10 is electronics of the present invention dress
The partial enlargement diagram set.Aforementioned light-emitting component 100 of the invention can be applied in various electronic devices 200.Electronic device
200 can be a display, such as spliced display or flexible display, and but not limited to this.In certain embodiments, originally
The electronic device 200 of invention can be a LED display panel, for example, public's display.In certain embodiments, electric
Sub-device 200 can be a light emitting device, such as can be used as the backlight or backlight module of non-spontaneous smooth display panel.However,
Electronic device 200 of the invention is not exemplified as limiting with above-mentioned.It is that public's display is that the present embodiment, which is with electronic device 200,
Example.Electronic device 200 of the invention includes a main substrate 202 and an at least light-emitting component 100.Main substrate 202 includes at least
One circuit 204 and multiple connection gaskets 206, circuit 204 and multiple connection gaskets 206 are arranged at 202 surface of main substrate.Circuit 204
It may include thin film transistor (TFT), conducting wire, capacitor or other suitable electronic components, be with transistor symbol indication circuit in Fig. 9
204.In Figure 10, connection gasket 206 can be made of metal material or any suitable conductive material.The setting of light-emitting component 100 exists
Circuit 204 is electrically connected on main substrate 202 and via connection gasket 206.Light-emitting component 100 in Fig. 9 and Figure 10 be with Fig. 1 with
For that shown in Figure 2, but not limited to this, and the aforementioned light-emitting component 100 mentioned in each embodiment and alternate embodiment all may be used
Applied to electronic device 200 of the invention, in the detailed construction that this repeats no more light-emitting component 100.In the present embodiment, electronics
Device 200 may include a plurality of light-emitting elements 100, be arranged at array pattern on 202 surface of main substrate.100 bottom of light-emitting component
Connection gasket can be electrically connected connection gasket 206 below via solder or other connection types.According to the present invention, connection gasket 206
Setting range be less than projected area of the corresponding light-emitting component 100 on main substrate 202, in other words, in overlook direction,
Light-emitting component 100 overlaps with the connection gasket 206 being electrically connected, and connection gasket 206 is covered by light-emitting component 100 without in vertical view side
Appear upwards, in other embodiments, connection gasket 206 is then that major part is covered by light-emitting component 100.This design can be reduced
The not shielded part of connection gasket 206 comprising metal material improves picture contrast to reduce the probability of reflection environment light.
It can be seen from the above, the encapsulating material periphery that there is light-emitting component of the invention photoresist layer high-penetration rate is arranged in,
And there is photoresist layer aperture light can be allowed to pass through, and the light of light-emitting component is concentrated and is projected by aperture.Light blocking
The internal layer of layer is reflection layer, can improve light by probability that aperture is projected to improve light utilization efficiency, and in light-emitting component packet
Promote light mixing when light-emitting diode chip for backlight unit containing multiple capable of emitting different colours light.The outer layer of photoresist layer is light absorbing layer,
The reflectivity of ambient light can be reduced, and then reduces ambient light to the interference of light-emitting component emitted light to improve contrast
Degree.When light-emitting component of the invention is using in an electronic, due to that can reduce the reflection of ambient light, raising light is utilized
Rate, or improve picture contrast.In addition, it is located at the connection gasket on the main substrate surface of electronic device because covered by light-emitting component,
The reflection of ambient light can also be reduced and improve Findings.
The above description is only an embodiment of the present invention, is not intended to restrict the invention, for those skilled in the art
For member, the invention may be variously modified and varied.All within the spirits and principles of the present invention, it is made it is any modification,
Equivalent replacement, improvement etc. should all include within protection scope of the present invention.
Claims (10)
1. a kind of light-emitting component characterized by comprising
One package substrate；
One first light-emitting diode chip for backlight unit, setting is on the package substrate；
One encapsulating material is set on the light-emitting diode chip for backlight unit and the package substrate；And
One photoresist layer is set on the encapsulating material, and the photoresist layer has one first aperture；
Wherein in overlook direction, the area of first aperture is less than the area of the light-emitting component.
2. light-emitting component according to claim 1, which is characterized in that the photoresist layer includes a reflection layer and a light
Absorbed layer, wherein the reflection layer is arranged between the light absorbing layer and the encapsulating material.
3. light-emitting component according to claim 1, which is characterized in that the position of first aperture corresponds to described first
The position of light-emitting diode chip for backlight unit.
4. light-emitting component according to claim 1, which is characterized in that further include one second light-emitting diode chip for backlight unit, be arranged
On the package substrate, in overlook direction, first aperture and first light-emitting diode chip for backlight unit and described second
At least part of light-emitting diode chip for backlight unit overlaps.
5. light-emitting component according to claim 1, which is characterized in that further include one second light-emitting diode chip for backlight unit, be arranged
On the package substrate, the photoresist layer includes one second aperture, and second aperture corresponds to described second and shines
Diode chip for backlight unit setting.
6. light-emitting component according to claim 1, which is characterized in that further include multiple scattering particles, diffusion particle, reflection
Particle, refracting particles, particle of other adjustable light type or combinations thereof are set in the encapsulating material.
7. light-emitting component according to claim 1, which is characterized in that first aperture exposes the envelope of a part
Package material, and the sheet encapsulating material face of the part has micro-structure.
8. light-emitting component according to claim 1, which is characterized in that between the package substrate and the photoresist layer
Within angle is greater than 90 degree.
9. a kind of electronic device characterized by comprising
One main substrate, including a circuit and multiple connection gaskets, the circuit and multiple connection gaskets are arranged at the main base
Plate surface；And
One light-emitting component is arranged on the main substrate and is electrically connected at least one of which of multiple connection gaskets, described
Light-emitting component includes:
One package substrate；
One light-emitting diode chip for backlight unit, setting is on the package substrate；
One encapsulating material is set on the light-emitting diode chip for backlight unit and the package substrate；And
One photoresist layer is set on the encapsulating material and has an aperture；
Wherein in overlook direction, the area of the aperture is less than the area of the light-emitting component.
10. electronic device according to claim 9, which is characterized in that in overlook direction, the light-emitting component and institute's electricity
Multiple connection gaskets of connection overlap.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16/355,854 US11018284B2 (en) | 2018-04-19 | 2019-03-18 | Light emitting element and electronic device |
| EP19165871.5A EP3557636B1 (en) | 2018-04-19 | 2019-03-28 | Electronic device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862659790P | 2018-04-19 | 2018-04-19 | |
| US62/659,790 | 2018-04-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110391324A true CN110391324A (en) | 2019-10-29 |
Family
ID=68284873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811133544.XA Pending CN110391324A (en) | 2018-04-19 | 2018-09-27 | Light-emitting component and electronic device |
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| Country | Link |
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| CN (1) | CN110391324A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114824142A (en) * | 2022-05-23 | 2022-07-29 | 重庆惠科金渝光电科技有限公司 | Display panel and display device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102356479A (en) * | 2009-03-19 | 2012-02-15 | 皇家飞利浦电子股份有限公司 | Illumination device with remote luminescent material |
| CN102694103A (en) * | 2011-03-25 | 2012-09-26 | 展晶科技(深圳)有限公司 | Led packaging structure |
| US20140175491A1 (en) * | 2012-12-25 | 2014-06-26 | Nichia Corporation | Light emitting device |
| TW201513401A (en) * | 2013-09-23 | 2015-04-01 | 弘凱光電（深圳）有限公司 | LED package structure for preventing lateral light leakage and method of manufacturing the same |
| JP2016149386A (en) * | 2015-02-10 | 2016-08-18 | パイオニア株式会社 | Semiconductor device, electronic device and semiconductor device manufacturing method |
-
2018
- 2018-09-27 CN CN201811133544.XA patent/CN110391324A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102356479A (en) * | 2009-03-19 | 2012-02-15 | 皇家飞利浦电子股份有限公司 | Illumination device with remote luminescent material |
| CN102694103A (en) * | 2011-03-25 | 2012-09-26 | 展晶科技(深圳)有限公司 | Led packaging structure |
| US20140175491A1 (en) * | 2012-12-25 | 2014-06-26 | Nichia Corporation | Light emitting device |
| TW201513401A (en) * | 2013-09-23 | 2015-04-01 | 弘凱光電（深圳）有限公司 | LED package structure for preventing lateral light leakage and method of manufacturing the same |
| JP2016149386A (en) * | 2015-02-10 | 2016-08-18 | パイオニア株式会社 | Semiconductor device, electronic device and semiconductor device manufacturing method |
Non-Patent Citations (1)
| Title |
|---|
| 文尚胜: "LED制备技术", 《半导体照明技术》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114824142A (en) * | 2022-05-23 | 2022-07-29 | 重庆惠科金渝光电科技有限公司 | Display panel and display device |
| CN114824142B (en) * | 2022-05-23 | 2023-08-08 | 重庆惠科金渝光电科技有限公司 | Display panel and display device |
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Application publication date: 20191029 |