CN110379709A - The manufacturing method of hafnia film - Google Patents
The manufacturing method of hafnia film Download PDFInfo
- Publication number
- CN110379709A CN110379709A CN201910676281.5A CN201910676281A CN110379709A CN 110379709 A CN110379709 A CN 110379709A CN 201910676281 A CN201910676281 A CN 201910676281A CN 110379709 A CN110379709 A CN 110379709A
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- hafnia film
- manufacturing
- semiconductor substrate
- hafnia
- layer
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- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 241000588731 Hafnia Species 0.000 title claims abstract description 76
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 238000004381 surface treatment Methods 0.000 claims abstract description 31
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 25
- 238000009826 distribution Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910001868 water Inorganic materials 0.000 claims description 10
- 229910052735 hafnium Inorganic materials 0.000 claims description 7
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910010038 TiAl Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229910003865 HfCl4 Inorganic materials 0.000 claims 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical group Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 claims 1
- 239000010410 layer Substances 0.000 description 61
- 239000010408 film Substances 0.000 description 51
- 238000000231 atomic layer deposition Methods 0.000 description 16
- 229910000449 hafnium oxide Inorganic materials 0.000 description 14
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a kind of manufacturing methods of hafnia film, comprising steps of Step 1: be surface-treated for the first time to semiconductor substrate and forming hydroxyl distribution on a semiconductor substrate；Step 2: semiconductor substrate is placed into hafnia film growth chamber, second of surface treatment in place is carried out, so that the hydroxyl in semiconductor substrate is evenly distributed for the characteristics of processing in place using second of surface treatment；Step 3: carrying out hafnia film growth.The present invention can improve the uniformity of hafnia film, and electric leakage of the grid can be reduced when hafnia film is as gate dielectric layer.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit, in particular to a kind of hafnium oxide (HfO2) film manufacturing method.
Background technique
Relative to silica, hafnium oxide has higher dielectric constant (HK), therefore in the art of semiconductor manufacturing, in 28nm
The high dielectric constant material that is made of hafnium oxide is generallyd use in logic circuit below as gate dielectric layer, and Gate Electrode Conductive material
The bed of material then generallys use metal gates (MG), the grid knot of gate dielectric layer and metal gate composition with high dielectric constant material
Structure is commonly abbreviated as HKMG in the art.
In existing HKMG technique, hafnium oxide material is because of dielectric coefficient with higher, so hafnium oxide is as gate dielectric layer
It can solve gate dielectric layer and bring leakage current problems of too be thinned.
In existing method, atomic layer deposition (ALD) technique manufacture hafnium oxide material layer is generallyd use.Technique in ALD technique
Gas is filled into reaction chamber and each reaction all forms one layer of monatomic material layer using pulsed, repeatedly formed by
The structure that the monatomic material layer of multilayer is formed by stacking.
Between carrying out ALD layer before hafnium oxide, it usually needs using No.1 liquid (SC1) to semiconductor substrate such as silicon substrate table
Face is handled, and the semiconductor substrate surface after SC1 cleaning can be distributed hydroxyl (- OH).But SC1 cleaning process is to be located at oxidation
It is a kind of displacement (ex-situ) processing outside the ALD growth position of hafnium.It is moved again after semiconductor substrate is cleaned and completed
Into ALD board carry out hafnium oxide ALD growth when, the environment in moving process will affect the hydroxyl of semiconductor substrate surface
The distribution of base finally will affect the uniformity of hafnium oxide growth so that the hydroxyl of semiconductor substrate surface can be made to be unevenly distributed,
Increase hafnium oxide surface roughness, is easy to produce grid drain electrode when as gate dielectric layer.It is existing as shown in Figure 1A to Fig. 1 E
There is the device junction composition in each step of the manufacturing method of hafnia film, the manufacturing method of existing hafnia film includes following step
It is rapid:
Step 1: as shown in Figure 1A, semiconductor substrate 101 is provided, the semiconductor substrate 101 is surface-treated,
The surface treatment is shifting processing, and the surface treatment forms hydroxyl distribution in the semiconductor substrate 101.
The semiconductor substrate 101 is silicon substrate.Boundary layer 102 is also formed on 101 surface of semiconductor substrate.
In general, the material of the boundary layer 102 is silica.
The surface treatment is cleaned using No.1 liquid.
Step 2: the semiconductor substrate 101 is placed into 103 growth chamber of hafnia film and to carry out hafnium oxide thin
Film 103 is grown.
In general, growing the hafnia film 103 using ALD technique.
HfCl is in the hafnium source used in the ALD technique4。
The oxygen source used in the ALD technique is H2O。
It is found that the hafnia film 103 is one atomic layer growth of an atomic layer as shown in Figure 1B to Fig. 1 D, first three
Layer atomic layer structure is respectively as shown in label 103a, 103b and 103c.In existing method, due to carrying out the table in step 1
After surface treatment, the surface of the semiconductor substrate, which will receive environment, to be influenced and makes the boundary in the semiconductor substrate 101
The hydroxyl distribution on 102 surface of surface layer becomes uneven, therefore the first atomic layer 103a also has non-uniform structure, this but also after
Continuous the second atomic layer 103b formed and third atomic layer 103c has non-uniform structure, finally makes the oxygen to be formed
It is in uneven thickness to change hafnium film 103.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of manufacturing methods of hafnia film, and it is thin to improve hafnium oxide
The uniformity of film.
In order to solve the above technical problems, the manufacturing method of hafnia film provided by the invention includes the following steps:
Step 1: providing semiconductor substrate, first time surface treatment, the first time table are carried out to the semiconductor substrate
Surface treatment is shifting processing, and the first time surface treatment forms hydroxyl distribution on the semiconductor substrate.
Step 2: the semiconductor substrate is placed into hafnia film growth chamber, it is raw carrying out hafnia film
Second of surface treatment in place is carried out before long, makes described half using second of surface treatment for the characteristics of processing in place
Hydroxyl on conductor substrate is evenly distributed, to eliminate the hafnia film growth chamber external environment to the semiconductor substrate
On hydroxyl distribution influence.
Step 3: carrying out hafnia film growth.
A further improvement is that the semiconductor substrate is silicon substrate.
A further improvement is that being also formed with boundary layer in the semiconductor substrate surface.
A further improvement is that the material of the boundary layer is silica.
A further improvement is that the first time surface treatment is cleaned using No.1 liquid.
A further improvement is that second of surface treatment uses H2O is cleaned.
A further improvement is that the water used that is surface-treated for the second time is deionized water.
A further improvement is that growing the hafnia film using ALD technique in step 3.
A further improvement is that HfCl is in the hafnium source used in the ALD technique4。
A further improvement is that the oxygen source used in the ALD technique is H2O。
A further improvement is that the hafnia film is as gate dielectric layer.
A further improvement is that further including in the hafnia film after hafnia film formation
Surface formed grid conducting layer the step of.
A further improvement is that the grid conducting layer is made of polysilicon layer or is made of metal gate.
A further improvement is that the oxidation between the grid conducting layer and the hafnia film
The surface of hafnium film is also sequentially formed with metal work function layer.
A further improvement is that the metal work function layer includes two kinds, the first work-function layer is the work function of PMOS
Layer, the work-function layer that second of work-function layer is NMOS, the material that the first described work-function layer is is TiN, described second
The material that work-function layer is is TiAl.
Semiconductor substrate is being placed into hafnia film growth chamber before progress hafnia film growth by the present invention,
A step second of surface treatment in place is increased, is distributed the hydroxyl on semiconductor substrate surface by second of surface treatment
Uniformly, since second surface treatment is to handle in place, therefore until carrying out hafnia film growth after second is surface-treated
Starting, the hydroxyl distribution of semiconductor substrate surface not will receive the influence of external environment, therefore be able to maintain uniform hydroxyl distribution,
Uniform hydroxyl distribution can make hafnia film homoepitaxial, so as to improve the uniformity of hafnia film.
And when using hafnia film as when the gate dielectric layer of semiconductor devices such as MOSFET, the good hafnium oxide of uniformity is thin
Film can reduce the electric leakage of the grid of device, so as to improve device performance.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments:
Figure 1A-Fig. 1 E is the device junction composition in each step of manufacturing method of existing hafnia film；
Fig. 2 is the flow chart of the manufacturing method of hafnia film of the embodiment of the present invention；
Fig. 3 A- Fig. 3 E is the device junction composition in each step of manufacturing method of hafnia film of the embodiment of the present invention.
Specific embodiment
It is the device architecture in each step of manufacturing method of hafnia film of the embodiment of the present invention as shown in Fig. 3 A to Fig. 3 E
Figure, the manufacturing method of hafnia film of the embodiment of the present invention include the following steps:
Step 1: as shown in Figure 3A, providing semiconductor substrate 1, the semiconductor substrate 1 is carried out at the first subsurface
Reason, the first time surface treatment is shifting processing, and the first time surface treatment forms hydroxyl in the semiconductor substrate 1
Distribution.
The semiconductor substrate 1 is silicon substrate.Boundary layer 2 is also formed on 1 surface of semiconductor substrate.
It is preferably selected as, the material of the boundary layer 2 is silica.
The first time surface treatment is cleaned using No.1 liquid.
Step 2: the semiconductor substrate 1 is placed into 3 growth chamber of hafnia film, hafnia film 3 is being carried out
Second in place is carried out before growth to be surface-treated, and is made the characteristics of processing in place using second of surface treatment described
Hydroxyl in semiconductor substrate 1 is evenly distributed, to eliminate the 3 growth chamber external environment of hafnia film to the semiconductor
The influence of hydroxyl distribution on substrate 1.
In present invention method, second of surface treatment uses H2O is cleaned.At second subsurface
The water used is managed as deionized water.
It is grown Step 3: carrying out hafnia film 3.
The hafnia film 3 is grown using ALD technique in step 3.
HfCl is in the hafnium source used in the ALD technique4。
The oxygen source used in the ALD technique is H2O。
It is found that the hafnia film 3 is one atomic layer growth of an atomic layer, three first layers as shown in Fig. 3 B to Fig. 3 D
Atomic layer structure is respectively as shown in label 3a, 3b and 3c.In present invention method, due in growth first layer atomic layer 3a
Before, the hydroxyl on 2 surface of the boundary layer in the semiconductor substrate 1 is evenly distributed, therefore the first atomic layer 3a has
Even structure, this finally makes but also the second atomic layer 3b and third atomic layer 3c that are subsequently formed have uniform structure
3 thickness of the hafnia film that must be formed is uniform.
In present invention method, the hafnia film 3 is used as gate dielectric layer.In the hafnia film 3
Further include the steps that forming grid conducting layer on the surface of the hafnia film 3 after being formed.
The grid conducting layer is made of polysilicon layer or is made of metal gate.
The surface of the hafnia film 3 between the grid conducting layer and the hafnia film 3
Also it is sequentially formed with metal work function layer.
The metal work function layer includes two kinds, the first work-function layer is the work-function layer of PMOS, second of work function
Layer is the work-function layer of NMOS, and the material that the first described work-function layer is is TiN, the material that second of work-function layer is
For TiAl.
Present invention method carries out hafnium oxide semiconductor substrate 1 to be placed into 3 growth chamber of hafnia film
Before film 3 is grown, a step second of surface treatment in place is increased, semiconductor substrate 1 is made by second of surface treatment
Hydroxyl on surface is evenly distributed, due to second surface treatment be handle in place, therefore after second is surface-treated until into
The growth of row hafnia film 3 starts, and the distribution of the hydroxyl on 1 surface of semiconductor substrate not will receive the influence of external environment, therefore energy
Uniform hydroxyl is kept to be distributed, uniform hydroxyl distribution can make 3 homoepitaxial of hafnia film, so as to improve hafnia film
3 uniformity.
And when the gate dielectric layer by hafnia film 3 as semiconductor devices such as MOSFET, the good hafnium oxide of uniformity
Film 3 can reduce the electric leakage of the grid of device, so as to improve device performance.
The present invention has been described in detail through specific embodiments, but these are not constituted to limit of the invention
System.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these are also answered
It is considered as protection scope of the present invention.
Claims (15)
1. a kind of manufacturing method of hafnia film, which comprises the steps of:
Step 1: providing semiconductor substrate, first time surface treatment is carried out to the semiconductor substrate, at first subsurface
Reason is shifting processing, and the first time surface treatment forms hydroxyl distribution on the semiconductor substrate；
Step 2: the semiconductor substrate is placed into hafnia film growth chamber, it is grown carrying out hafnia film
It is preceding to carry out second of surface treatment in place, make the semiconductor using second of surface treatment for the characteristics of processing in place
Hydroxyl on substrate is evenly distributed, to eliminate the hafnia film growth chamber external environment in the semiconductor substrate
The influence of hydroxyl distribution；
Step 3: carrying out hafnia film growth.
2. the manufacturing method of hafnia film as described in claim 1, it is characterised in that: the semiconductor substrate is silicon lining
Bottom.
3. the manufacturing method of hafnia film as claimed in claim 2, it is characterised in that: the semiconductor substrate surface also
Form interfacial TCO layer.
4. the manufacturing method of hafnia film as claimed in claim 3, it is characterised in that: the material of the boundary layer is oxidation
Silicon.
5. the manufacturing method of hafnia film as described in claim 1, it is characterised in that: the first time surface treatment uses
No.1 liquid is cleaned.
6. the manufacturing method of hafnia film as claimed in claim 5, it is characterised in that: second of surface treatment uses
H2O is cleaned.
7. the manufacturing method of hafnia film as claimed in claim 6, it is characterised in that: second of surface treatment uses
Water be deionized water.
8. the manufacturing method of hafnia film as described in claim 1, it is characterised in that: raw using ALD technique in step 3
The long hafnia film.
9. the manufacturing method of hafnia film as claimed in claim 8, it is characterised in that: the hafnium used in the ALD technique
Source is HfCl4。
10. the manufacturing method of hafnia film as claimed in claim 8, it is characterised in that: the oxygen used in the ALD technique
Source is H2O。
11. the manufacturing method of hafnia film as described in claim 1, it is characterised in that: the hafnia film is as grid
Dielectric layer.
12. the manufacturing method of hafnia film as claimed in claim 11, it is characterised in that: in the hafnia film
Further include the steps that forming grid conducting layer on the surface of the hafnia film after being formed.
13. the manufacturing method of hafnia film as claimed in claim 12, it is characterised in that: the grid conducting layer is by polycrystalline
Silicon layer is formed or is made of metal gate.
14. the manufacturing method of hafnia film as claimed in claim 13, it is characterised in that: in the grid conducting layer and institute
The surface for stating the hafnia film between the hafnia film is also sequentially formed with metal work function layer.
15. the manufacturing method of hafnia film as claimed in claim 14, it is characterised in that: the metal work function layer includes
Two kinds, the first work-function layer is the work-function layer of PMOS, and second work-function layer is the work-function layer of NMOS, it is described the first
The material that work-function layer is is TiN, and the material that second of work-function layer is is TiAl.
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| CN201910676281.5A CN110379709A (en) | 2019-07-25 | 2019-07-25 | The manufacturing method of hafnia film |
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| CN201910676281.5A CN110379709A (en) | 2019-07-25 | 2019-07-25 | The manufacturing method of hafnia film |
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ID=68255907
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113643980A (en) * | 2021-07-27 | 2021-11-12 | 上海华力集成电路制造有限公司 | Semiconductor device and forming method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101248212A (en) * | 2005-06-24 | 2008-08-20 | 应用材料股份有限公司 | Plasma treatment of hafnium-containing materials |
| WO2012133433A1 (en) * | 2011-03-28 | 2012-10-04 | 独立行政法人産業技術総合研究所 | Method for forming gate insulating film and method for manufacturing semiconductor device |
| CN103430286A (en) * | 2011-02-04 | 2013-12-04 | 应用材料公司 | In situ vapor phase surface activation of silica |
| CN109103087A (en) * | 2018-07-13 | 2018-12-28 | 上海华力集成电路制造有限公司 | The manufacturing method of hafnium oxide gate dielectric layer |
-
2019
- 2019-07-25 CN CN201910676281.5A patent/CN110379709A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101248212A (en) * | 2005-06-24 | 2008-08-20 | 应用材料股份有限公司 | Plasma treatment of hafnium-containing materials |
| CN103430286A (en) * | 2011-02-04 | 2013-12-04 | 应用材料公司 | In situ vapor phase surface activation of silica |
| WO2012133433A1 (en) * | 2011-03-28 | 2012-10-04 | 独立行政法人産業技術総合研究所 | Method for forming gate insulating film and method for manufacturing semiconductor device |
| CN109103087A (en) * | 2018-07-13 | 2018-12-28 | 上海华力集成电路制造有限公司 | The manufacturing method of hafnium oxide gate dielectric layer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113643980A (en) * | 2021-07-27 | 2021-11-12 | 上海华力集成电路制造有限公司 | Semiconductor device and forming method thereof |
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