CN110335816A - Aluminium interconnection structure and forming method thereof - Google Patents
Aluminium interconnection structure and forming method thereof Download PDFInfo
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- CN110335816A CN110335816A CN201910618451.4A CN201910618451A CN110335816A CN 110335816 A CN110335816 A CN 110335816A CN 201910618451 A CN201910618451 A CN 201910618451A CN 110335816 A CN110335816 A CN 110335816A
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- aluminium
- material layer
- metal material
- interconnection structure
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- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 151
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 150
- 239000004411 aluminium Substances 0.000 title claims abstract description 141
- 238000000034 method Methods 0.000 title claims abstract description 72
- 239000007769 metal material Substances 0.000 claims abstract description 110
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000003643 water by type Substances 0.000 claims abstract description 3
- 238000005530 etching Methods 0.000 claims description 38
- 238000004544 sputter deposition Methods 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 19
- VZGDMQKNWNREIO-UHFFFAOYSA-N carbon tetrachloride Substances ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 15
- 229910015844 BCl3 Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 6
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 229910018182 Al—Cu Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 35
- 239000000460 chlorine Substances 0.000 description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 19
- 238000004140 cleaning Methods 0.000 description 16
- 229910001868 water Inorganic materials 0.000 description 12
- 239000008367 deionised water Substances 0.000 description 11
- 229910021641 deionized water Inorganic materials 0.000 description 11
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 9
- 229910052801 chlorine Inorganic materials 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 4
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000004380 ashing Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 125000001309 chloro group Chemical group Cl* 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ILXDAXZQNSOSAE-UHFFFAOYSA-N [AlH3].[Cl] Chemical compound [AlH3].[Cl] ILXDAXZQNSOSAE-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000007560 sedimentation technique Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geometry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A kind of aluminium interconnection structure and forming method thereof, which comprises provide semiconductor substrate, the semiconductor substrate surface is sequentially formed with metal material layer and patterned mask layer, and the metal material layer includes aluminium-containing metal material layer；Etch the metal material layer；Remove the patterned mask layer；The aluminium interconnection structure is cleaned in 25 DEG C to 40 DEG C of temperature condition deionised waters.The structure and method reduce a possibility that hole is generated in the aluminum metallic material layer, improve the electrical connection properties and reliability of aluminium interconnection structure.
Description
Technical field
This application involves field of semiconductor manufacture, it particularly relates to a kind of aluminium interconnection structure and forming method thereof.
Background technique
In integrated circuit fabrication, chip interior connects semiconductor devices using metal interconnecting wires, current common use
The metal material for making metal interconnecting wires includes aluminium, copper, tungsten etc..
Fig. 1 to Fig. 3 is the structural schematic diagram for forming each step of aluminium interconnection structure method in the prior art, the method packet
It includes: with reference to Fig. 1, semiconductor substrate 110 being provided, the first barrier layer 120 is sequentially formed in the semiconductor substrate 110, contain aluminium
Metal material layer 130 and the second barrier layer 140, wherein first barrier layer 120 is titanium layer, titanium nitride layer or titanium layer
With perhaps a variety of combination aluminium-containing metal material the layer 130 such as metallic aluminium or aluminium of any one in titanium nitride layer
Alloy material, second barrier layer 140 be titanium layer, in titanium nitride layer or titanium layer and titanium nitride layer any one or it is more
The combination of kind.Mask layer 150 then is formed on 140 surface of the second barrier layer, the mask layer 150 is, for example, to pattern
Photoresist layer.The mask layer 150 is used to define the positions and dimensions of the aluminium interconnection structure.
With reference to Fig. 2, under the protection of mask layer 150, it is sequentially etched second barrier layer 140, aluminium-containing metal material layer
130 and first barrier layer 120 with continued reference to Fig. 3 the mask layer 150 is removed using cineration technics, form the aluminium interconnection
Structure.
However, as shown in figure 4, the method that the prior art forms the aluminium interconnection structure, is easy in the aluminiferous metals material
The side wall of the bed of material 130 forms hole 160, influences the electrical connection properties of the aluminium interconnection structure.Accordingly, it is desirable to provide a kind of new
The forming method of aluminium interconnection structure.
Summary of the invention
Technical scheme technical problems to be solved are: being easy containing for the forming method of existing aluminium interconnection structure
Aluminum metallic material layer side wall generates the defect of hole, provides a kind of forming method of improved aluminium interconnection structure, contains described in elimination
The hole of aluminum metallic material layer side wall.
The one side of the application provides a kind of forming method of aluminium interconnection structure, comprising:
Semiconductor substrate is provided, the semiconductor substrate surface is sequentially formed with metal material layer and patterned exposure mask
Layer, the metal material layer includes aluminium-containing metal material layer；Etch the metal material layer；Remove the patterned mask layer；
The aluminium interconnection structure is cleaned in 25 DEG C to 40 DEG C of temperature condition deionised waters.
In some embodiments of the present application, the technique for removing the patterned mask layer is cineration technics, wherein is carried out
The gas of the cineration technics includes H2O and O2。
In some embodiments of the present application, the aluminium-containing metal material layer is formed using sputter deposition craft, wherein institute
State sputter deposition craft 350 DEG C to 380 DEG C at a temperature of carry out.
In some embodiments of the present application, the metal material layer is etched using dry etch process, wherein described dry
The etching gas of method etching technics includes Cl2, CCl4And BCl3One or more of.
In some embodiments of the present application, the etching gas of the dry etch process further includes N2And CHF3In one
Kind is a variety of.
In some embodiments of the present application, the etching pressure range of the dry etch process is from 8mt to 20mt.
In some embodiments of the present application, the Cl2Or CCl4Or BCl3Range of flow from 30sccm to
50sccm, the N2Or CHF3Range of flow be 5sccm to 15sccm.
In some embodiments of the present application, the aluminium-containing metal material layer is made of Al-Cu alloy.
In some embodiments of the present application, the metal material layer includes being sequentially formed in the semiconductor substrate surface
The first barrier layer, aluminium-containing metal material layer and the second barrier layer.
The another aspect of the application provides a kind of aluminium interconnection structure, what the aluminium interconnection structure was provided by above-mentioned first aspect
Any one method is formed.
Aluminium interconnection structure and forming method thereof described in the embodiment of the present application, has adjusted the cleaning process of the deionized water,
The aluminium interconnection structure is cleaned under the conditions of 25 DEG C to 40 DEG C of temperature, is reduced in the aluminium-containing metal material layer and is generated hole
A possibility that.Further, H is used in the technique for being ashed the photoetching agent pattern2O/O2As podzolic gas；At 350 DEG C extremely
The sputter deposition craft of aluminium-containing metal material layer is carried out in the range of 380 DEG C；In the technique for etching the metal material layer, adjust
Nitrogen or CHF is added in the component of the whole etching gas3Equal gases, and the flow of etching gas is adjusted, etching temperature etc.,
A possibility that generating hole in the aluminum metallic material layer is further decreased, the electrical connection properties of aluminium interconnection structure and reliable are improved
Property.
Other feature will be set forth in part in the description in the application.By the elaboration, make the following drawings and
The content of embodiment narration becomes apparent for those of ordinary skills.Inventive point in the application can pass through
Practice is sufficiently illustrated using method described in detailed example discussed below, means and combinations thereof.
Detailed description of the invention
Exemplary embodiment disclosed in this application is described in detail in the following drawings.Wherein identical appended drawing reference is in attached drawing
Several views in indicate similar structure.Those of ordinary skill in the art will be understood that these embodiments be non-limiting,
Exemplary embodiment, the purpose that attached drawing is merely to illustrate and describes, it is no intended to it limits the scope of the present disclosure, other modes
Embodiment may also similarly complete the intention of the invention in the application.It should be appreciated that the drawings are not drawn to scale.Wherein:
Fig. 1 to Fig. 3 is a kind of structural schematic diagram of each step of aluminium interconnection structure production method of the prior art；
Fig. 4 is the structural schematic diagram for the aluminium interconnection structure side wall hole that the prior art is formed；
Fig. 5 is the schematic diagram of the used tool of sputtered aluminum depositing operation in the disclosure；
Fig. 6 is the schematic diagram that aluminium-containing metal material layer side wall generates AlCl.
Fig. 7 is for the process flow chart of the forming method of aluminium interconnection structure described in the embodiment of the present application.
Specific embodiment
Following description provides the specific application scene of the application and requirements, it is therefore an objective to those skilled in the art be enable to make
It makes and using the content in the application.To those skilled in the art, to the various partial modifications of the disclosed embodiments
Be it will be apparent that and without departing from the spirit and scope of the disclosure, the General Principle that will can be defined here
Applied to other embodiments and application.Therefore, the embodiment the present disclosure is not limited to shown in, but it is consistent most wide with claim
Range.
Technical solution of the present invention is described in detail below with reference to embodiment and attached drawing.
The method for forming aluminium interconnection structure is included in the semiconductor substrate surface and sequentially forms metal material layer and pattern
The mask layer of change, wherein the metal material layer includes aluminium-containing metal material layer；And the etching metal material layer, remove institute
State patterned mask layer.After etching the metal material layer, and the removal patterned mask layer and etc. after,
It further include cleaning step, with the pollution of film layer or aluminium interconnection structure surface after the removal progress step and impurity.Wherein, shape
Technique at the metal material layer is, for example, gas-phase deposition, for example, sputter deposition craft；Etch the metal material
The technique of layer is, for example, dry etch process；The patterned mask layer is, for example, photoresist layer, removes the patterned mask
The technique of layer is, for example, cineration technics.The cleaning step is, for example, deionized water cleaning.
Inventor is the study found that the hole that the method is generated in aluminium-containing metal material layer side wall has with Multiple factors
It closes.
It is found in the research of inventor, described hole is primarily generated at the side wall of the aluminium-containing metal material layer, described
Aluminium-containing metal material layer be, for example, metallic aluminium or aluminium alloy, the alloy of the aluminium such as made of Al-Cu alloy.Contain described in formation
The technique of aluminum metallic material layer is, for example, sputter deposition craft, and Fig. 5 show a kind of schematic diagram of sputtering deposition device, including chamber
Body 20, the semiconductor substrate 21 are arranged on the plummer 22 of 20 bottom of cavity, pass through coil at the top of the cavity 20
Electric and magnetic fields are generated, the intracorporal sputter gas of the chamber will be passed through and be changed into plasma, thereby executing the sputtering sedimentation
Technique.The sputter deposition craft is related to power, pressure, the parameters such as temperature.
Inventor is the study found that the formation of aluminium-containing metal material layer Hole is related with the temperature of sputter deposition craft.Phase
High sputtering sedimentation temperature can lead to and form more holes on the side wall of aluminium-containing metal material layer, and therefore cause higher
Aperture density.This is because, the granularity for being formed by aluminium grain in aluminium-containing metal material layer is smaller when sputter temperature increases,
Therefore the specific surface area (gross area possessed by unit mass substance) of aluminium grain is larger, this can dramatically increase chlorine, the substances such as fluorine
The time that area and chlorine for contacting and interact with aluminium etc. pass through between aluminium grain.As a result in aluminiferous metals
Material layer side wall forms more readily soluble impurity (such as AlCl), so as to cause more holes in aluminium-containing metal material layer
It is formed.
Inventor is the study found that etch the technique also formation with aluminium-containing metal material layer Hole of the metal material layer
There is substantial connection.For example, in dry etch process, when the aluminium-containing metal material layer being etched is aluminium or acieral (such as Al-
When Cu), the etching gas generally includes chlorine (Cl2)。
And Cl2It may be a key factor of hole formation on the side wall for cause aluminium-containing metal material layer.Such as Fig. 6 institute
Show, Cl2Gas can enter the boundary of the aluminium grain on the side wall of aluminium-containing metal material layer, make on aluminium-containing metal material layer side wall
Aluminium grain be changed into the (amount of the chlorine of or compound, concrete form and infiltration and in the position of conjugate 280 containing AlCl
It is related with the ratio of aluminium element to set chlorine element).AlCl is generally formed by ionic bond, therefore water-soluble or aqueous solution
In, cause to generate hole on the side wall of the aluminium-containing metal material layer.
In addition, in etching technics and subsequent cleaning process, etching and some impurity or dirt in cleaning environment
Dye object (such as oxygen (O2) and moisture (H2O the combination that)) also can promote or help Cl atom or ion and metallic aluminium, makes institute
The aluminium atom and Cl atom or ions binding for stating aluminium-containing metal material layer side wall cause in the aluminium-containing metal material layer that makes
Hole is formed on side wall.For example, inventors have found that in the case that other conditions are constant, if also containing oxygen in environment, moisture etc.
When, the density of the hole formed on aluminium-containing metal material layer side wall dramatically increases.
In the technique for being ashed the patterned mask layer, the gas including oxygen and fluorine is generallyd use, for example including CF4With
O2Podzolic gas.However, inventor is the study found that CF4Presence the formation of hole on side wall can be made more serious.This may
Caused by being since following procedure has occurred on the side wall of aluminium-containing metal material layer: the aluminium grain on side wall or by proximal wall
The AlCl of upper formation is in CF4Under the action of can be further converted to AlF.Compared with AlCl, AlF is more soluble in water
Or in aqueous solution.Moreover, under certain conditions, such as at high temperature, the migration of AlF may accelerate, this makes hole type
At the problem of it is more serious.Therefore, CF4Presence may cause and form more holes in aluminium-containing metal material layer.
In addition, inventor is the study found that the temperature of deionized water cleaning has the formation of aluminium-containing metal material layer Hole
There is highly important influence.Higher temperature can be such that the reactivity of many substances increases, and such as penetrate into etching process containing aluminium
Chlorine in metal material layer, the elements such as fluorine can have higher reactivity, therefore be easier to dissolve under high temperature water environment, cause
More holes are formed in aluminium-containing metal material layer.
In view of above description, the formation of aluminium-containing metal material layer Hole is the coefficient result of many factors.To institute
The improvement and optimization for stating technique in various factors can effectively reduce the formation of aluminium-containing metal material layer Hole.
Therefore, the embodiment of the present application provides a kind of forming method of aluminium interconnection structure, and the method can be reduced containing aluminium
The formation of metal material layer Hole.It is the forming method of aluminium interconnection structure described in the embodiment of the present application with reference to shown in attached drawing 7
Process flow chart, the method includes step S1 provides semiconductor substrate, and the semiconductor substrate surface is sequentially formed with gold
Belong to material layer and patterned mask layer, the metal material layer include aluminium-containing metal material layer；Step S2 etches the metal
Material layer；Step S3 removes the patterned mask layer；Step S4, deionized water under the conditions of 25 DEG C to 40 DEG C of temperature
Clean the aluminium interconnection structure.
The aluminium interconnection structure formed is with reference to shown in attached drawing 6, including semiconductor substrate 210, is located at the semiconductor and serves as a contrast
Metal material layer on bottom 210, wherein the metal material layer includes first be sequentially located in the semiconductor substrate 210
Barrier layer 220, aluminium-containing metal material layer 230 and the second barrier layer 240, it is described wherein, first barrier layer 220 be titanium
Any one in layer, titanium nitride layer or titanium layer and titanium nitride layer or a variety of combinations, the aluminium-containing metal material layer 230
Such as metallic aluminium perhaps aluminium alloy material second barrier layer 240 be titanium layer, titanium nitride layer or titanium layer and titanium nitride layer
In any one or a variety of combinations.
As previously mentioned, temperature increases, the chlorine in aluminium-containing metal material layer, the elements such as fluorine can have higher reactivity,
Therefore it is easier to dissolve under high temperature water environment, causes to form more holes in aluminium-containing metal material layer, therefore appropriate reduction
The temperature of deionized water cleaning can substantially reduce the formation of hole.Therefore the process of deionized water cleaning will be in temperature low as far as possible
Lower progress, and also to guarantee the effect of cleaning simultaneously.In the embodiment of the present application, the temperature of deionized water cleaning should be controlled at 25 DEG C
To in the range of 40 DEG C, preferably 30 DEG C to 35 DEG C, to reduce the formation of hole to the greatest extent, and guarantee the effect of cleaning simultaneously.Hair
The study found that when the temperature of deionized water cleaning is greater than 40 DEG C, the quantity that hole is formed in aluminium-containing metal material layer increases bright people
Add, moreover, temperature is higher, the hole formed in aluminium-containing metal material layer is more.Such as the temperature of deionized water cleaning is at 60 DEG C
When aluminium-containing metal material layer in the hole that is formed be significantly more than the temperature of deionized water cleaning at 40 DEG C.
In some embodiments of the present application, the technique of the patterned mask layer is removed for cineration technics, described in progress
The gas of cineration technics includes H2O and O2.Wherein, the H2O is vaporous water.The embodiment of the present application is it has been noted that in grey chemical industry
Skill gas includes CF4And O2In the case where, CF4The aluminium-containing metal material layer side wall can be made to form AlF and promote the shape of hole
At.Therefore, it includes H that the present embodiment, which uses,2O and O2Podzolic gas, it is entirely avoided in the aluminium-containing metal material layer side wall shape
At AlF, the formation of the aluminium-containing metal material layer side wall hole can be substantially reduced.
In some embodiments of the application, in addition to using H2O/O2To replace CF4/O2Except, control cineration technics
Temperature can also limit the formation of hole in an appropriate low-level, such as ashing temperature is 180 degrees Celsius to 250 Celsius
Degree, optionally, for example, 180 degrees Celsius, 200 degrees Celsius, 225 degrees Celsius, 250 degrees Celsius.Inventor is the study found that when ashing
When temperature is greater than 250 degrees Celsius, the aluminium-containing metal material layer side wall hole increases.
In one embodiment of the application, using including H2O and O2Podzolic gas, wherein the H2O and O2Flow
Than being 2-4: 1, such as 3: 1 generations that can preferably limit aluminium-containing metal material layer side wall cavity.
In the specific embodiment of the application, using including H2O and O2Podzolic gas, wherein the H2The stream of O
Amount range is 450-500sccm, O2Flow be 150-200sccm, ashing temperature be 200 degrees Celsius, reaction cavity pressure be
700mt to 1000mt.The technique limits the generation in aluminium-containing metal material layer side wall cavity.
In some embodiments of the application, the metal material layer, the metal material are etched using dry etch process
Layer includes aluminium-containing metal material layer.The etching gas for etching the metal material layer includes Cl base gas, the Cl base gas
Including chlorine, carbon tetrachloride (CCl4), boron chloride (BCl3) one or more of mixing.Optionally, the etching gas
Body includes Cl2With carbon tetrachloride (CCl4), boron chloride (BCl3) one of or two kinds of mixing.
Due to Cl2Presence may be in conjunction with the Al atom of aluminium-containing metal material layer side wall to forming ease of solubility
Therefore the substances such as AlCl in some embodiments of the present disclosure, have advanced optimized the dry etch process.It is specific next
It says, the etching gas for etching the metal material layer should have than pressure lower under regular situation and higher etching temperature,
The combination of Cl in aluminium atom and environment to reduce the aluminium-containing metal material layer side wall.In some embodiments of the present application,
Pressure in above-mentioned etching technics can be in the range of 8mt to 20mt, and preferably 10mt to 15mt.Inventor studies hair
Existing, in the case that other technological parameters of etching technics are constant, etching pressure is smaller, and the cavity of aluminium-containing metal material layer side wall is got over
It is few.
In some embodiments of the present application, the etching temperature is between 30 degrees Celsius to 50 degrees Celsius, in addition, institute
The flow for stating chlorine can be in 30sccm (standard cubic centimeters per minute) to the range of 50sccm
It is interior, and preferably from 35sccm to 45sccm, the carbon tetrachloride (CCl4) or boron chloride (BCl3) flow can be
In the range of 30sccm to 50sccm.In the case that inventor is the study found that other technological parameters of etching technics are constant, chlorine
Flow it is smaller, aluminium-containing metal material layer side wall cavity it is fewer.
In some embodiments of the present application, the etching gas can be Cl2With the group of one or more other gases
It closes, such as Cl2And BCl3Combination.In a specific embodiment, the etching gas includes Cl2And BCl3, wherein instead
Answering cavity pressure is 12-15mt, Cl2Flow be 40sccm, BCl3Flow be 45sccm, in an inert atmosphere, for example,
Under the helium atmosphere of 8sccm, dry etching is carried out, the aperture density on the aluminium-containing metal material layer side wall can be made further to drop
It is low.
In addition, the etching gas can also include other gases, such as nitrogen in some embodiments of the present application
(N2), fluoroform (CHF3) in any one or a variety of combinations, the N2Or CHF3Range of flow be
5sccm to 15sccm.In some embodiments of the present application, the etching gas may include Cl2And N2；Or Cl2With
BCl3And N2；Or Cl2And BCl3And N2And CHF3, the side of the aluminium-containing metal material layer can be significantly reduced in the etching gas
Aperture density on wall.
The sputter deposition craft of the aluminium-containing metal material layer also will affect the shape of the aluminium-containing metal material layer Hole
At, therefore the parameter by optimizing the aluminium-containing metal material layer sputter deposition craft, the especially temperature of sputter deposition craft,
The formation of hole can be further reduced.Inventor is the study found that sputter temperature raising can lead in the aluminium-containing metal material layer
It is middle to form more holes.Therefore, in some embodiments, the sputter temperature of the aluminium-containing metal material layer is 350 DEG C to 380
DEG C, and preferably 360 DEG C to 370 DEG C of range.It is splashed by carrying out the aluminium-containing metal material layer under the conditions of temperature
Depositing operation is penetrated, the aluminium grain in the aluminium-containing metal material layer can keep relatively large granularity, this leads to aluminium grain
Specific surface area is relatively small.In this way, C12The time passed through between aluminium grain is reduced, and the contact with aluminium grain is also less, therefore
The chance of the formation such as AlCl, AlF is reduced, therefore reduces a possibility that hole is formed in the aluminium-containing metal material layer.
In the specific embodiment of the application, inert gas, example are used in the sputter deposition craft of the aluminium-containing metal material layer
Auxiliary gas such as Ar gas as sputter deposition craft, sputtering power are, for example, 1kw to 2kw, such as 1.2kw, 1.5kw,
1.8kw.Other technological parameters can be selected in the prior art in the sputter deposition craft of the aluminium-containing metal material layer
Some known technologies.
The application also provides a kind of aluminium interconnection structure, using the forming method shape of aluminium interconnection structure described in the embodiment of the present application
At.
Aluminium interconnection structure and forming method thereof described in the embodiment of the present application, has adjusted the cleaning process of the deionized water,
The aluminium interconnection structure is cleaned under the conditions of 25 DEG C to 40 DEG C of temperature, is reduced in the aluminium-containing metal material layer and is generated hole
A possibility that.Further, H is used in the technique for being ashed the photoetching agent pattern2O/O2As podzolic gas；At 350 DEG C extremely
The sputter deposition craft of aluminium-containing metal material layer is carried out in the range of 380 DEG C；In the technique for etching the metal material layer, adjust
Nitrogen or CHF is added in the component of the whole etching gas3Equal gases, and the flow of etching gas is adjusted, etching temperature etc.,
Further decrease a possibility that hole is generated in the aluminum metallic material layer.
It should be noted that in practice, the sequence of above-mentioned optimization is only applicable to some embodiments, rather than the disclosure is all
Embodiment.That is, in the case that certain other embodiments or, some factor with lower influence or priority may be
It is more important than the factor of certain high influences or priority to reduce hole formation aspect.In addition, according to actual needs, may be implemented
State one or more of optimization or adaptation step or all, it or they can independently carry out or suitable with any other
Method improves combination progress.
In addition, in some embodiments, aluminium interconnection structure is manufactured using in above-mentioned one or more Optimized Measures.With
It is compared by the aluminium interconnection structure that common process manufactures, the aluminium interconnection structure of constructed according to the present disclosure has the hole significantly reduced
Formation and lower aperture density, to improve the electrical connection properties and reliability of aluminium interconnection structure.
In conclusion after reading this detailed disclosures, it will be understood by those skilled in the art that aforementioned detailed disclosure
Content can be only presented in an illustrative manner, and can not be restrictive.Although not explicitly described or shown herein, this field skill
Art personnel are understood that improve and modify it is intended to include the various reasonable changes to embodiment.These change, improve and
It modifies and is intended to be proposed by the disclosure, and in the spirit and scope of the exemplary embodiment of the disclosure.
It should be appreciated that term that the present embodiment uses " and/or " it include associated listing one or more of project
It is any or all combination.It, can be with it should be appreciated that when an element is referred to as " connection " or " coupling " to another element
It is directly connected or is coupled to another element, or there may also be intermediary elements.
Similarly, it should be understood that when the element of such as layer, region or semiconductor substrate etc is referred to as in another yuan
, can directly on the other element when part " upper ", or there may also be intermediary elements.In contrast, term is " directly
Ground " indicates no intermediary element.It is also understood that term " including ", " including ", " including " and/or " including ", makes herein
Used time indicates that there are documented feature, entirety, step, operation, element and/or component, but presence or additional one is not precluded
Other a or multiple features, entirety, step, operation, element, component and/or their group.
It is also understood that although term first, second, third, etc. can be used herein to describe various elements, these
Element should not be limited by these terms.These terms are only used to distinguish an element with another element.Therefore, exist
In the case where not being detached from the teachings of the present invention, first element in some embodiments can be referred to as in other embodiments
Second element.Identical reference label or identical reference designator indicate identical element throughout the specification.
In addition, by reference to as Utopian graphical representation of exemplary cross sectional view and/or plane diagram example is described
Property embodiment.Therefore, because with the shape illustrated not being both foreseeable caused by such as manufacturing technology and/or tolerance.Cause
Exemplary embodiment, should not be interpreted as being limited to the shape in region out shown here, but should include by for example making by this
The deviation in shape caused by making.For example, the etching area for being shown as rectangle would generally have circular or curved spy
Sign.Therefore, region shown in figure is substantially schematical, and shape is not configured to show the practical shape in the region of device
Shape is also not to limit the range of exemplary embodiment.
In conclusion after reading this detailed disclosures, it will be understood by those skilled in the art that aforementioned detailed disclosure
Content can be only presented in an illustrative manner, and can not be restrictive.Although not explicitly described or shown herein, this field skill
Art personnel are understood that improve and modify it is intended to include the various reasonable changes to embodiment.These change, improve and
It modifies and is intended to be proposed by the disclosure, and in the range of the exemplary embodiment of the disclosure.
Claims (10)
1. a kind of forming method of aluminium interconnection structure, comprising:
Semiconductor substrate is provided, the semiconductor substrate surface is sequentially formed with metal material layer and patterned mask layer, institute
Stating metal material layer includes aluminium-containing metal material layer；
Etch the metal material layer；
Remove the patterned mask layer；
The aluminium interconnection structure is cleaned in 25 DEG C to 40 DEG C of temperature condition deionised waters.
2. the forming method of aluminium interconnection structure as described in claim 1, which is characterized in that remove the patterned mask layer
Technique is cineration technics, wherein the gas for carrying out the cineration technics includes H2O and O2。
3. the forming method of aluminium interconnection structure as described in claim 1, which is characterized in that form institute using sputter deposition craft
State aluminium-containing metal material layer, wherein the sputter deposition craft 350 DEG C to 380 DEG C at a temperature of carry out.
4. the forming method of aluminium interconnection structure as described in claim 1, which is characterized in that etch institute using dry etch process
State metal material layer, wherein the etching gas of the dry etch process includes Cl2, CCl4And BCl3One of or it is more
Kind.
5. the forming method of aluminium interconnection structure as claimed in claim 4, which is characterized in that the etching of the dry etch process
Gas further includes N2And CHF3One or more of.
6. the forming method of aluminium interconnection structure as claimed in claim 5, which is characterized in that the etching of the dry etch process
Pressure range is from 8mt to 20mt.
7. the forming method of aluminium interconnection structure as claimed in claim 6, which is characterized in that the Cl2Or CCl4Or BCl3
Range of flow from 30sccm to 50sccm, the N2Or CHF3Range of flow be 5sccm to 15sccm.
8. the forming method of aluminium interconnection structure as described in claim 1, which is characterized in that the aluminium-containing metal material layer is
Made of Al-Cu alloy.
9. the forming method of aluminium interconnection structure as described in claim 1, which is characterized in that the metal material layer includes successively
It is formed in the first barrier layer of the semiconductor substrate surface, aluminium-containing metal material layer and the second barrier layer.
10. a kind of aluminium interconnection structure, which is characterized in that formed using any one method in claim 1-9.
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| US5946589A (en) * | 1997-10-09 | 1999-08-31 | Chartered Semiconductor Manufacturing, Ltd. | Elimination of void formation in aluminum based interconnect structures |
| CN100521071C (en) * | 2003-07-11 | 2009-07-29 | Nxp股份有限公司 | Method of manufacturing a semiconductor device and an apparatus for use in such a method |
| CN102738064A (en) * | 2011-04-12 | 2012-10-17 | 南亚科技股份有限公司 | Method for fabricating metal redistribution layer |
| CN102782113A (en) * | 2010-03-05 | 2012-11-14 | 朗姆研究公司 | Cleaning solution for sidewall polymer of damascene processes |
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2019
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5946589A (en) * | 1997-10-09 | 1999-08-31 | Chartered Semiconductor Manufacturing, Ltd. | Elimination of void formation in aluminum based interconnect structures |
| CN100521071C (en) * | 2003-07-11 | 2009-07-29 | Nxp股份有限公司 | Method of manufacturing a semiconductor device and an apparatus for use in such a method |
| CN102782113A (en) * | 2010-03-05 | 2012-11-14 | 朗姆研究公司 | Cleaning solution for sidewall polymer of damascene processes |
| CN102738064A (en) * | 2011-04-12 | 2012-10-17 | 南亚科技股份有限公司 | Method for fabricating metal redistribution layer |
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