CN110323055B - Preparation device and preparation method of nanocrystalline product - Google Patents
Preparation device and preparation method of nanocrystalline product Download PDFInfo
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- CN110323055B CN110323055B CN201910574064.5A CN201910574064A CN110323055B CN 110323055 B CN110323055 B CN 110323055B CN 201910574064 A CN201910574064 A CN 201910574064A CN 110323055 B CN110323055 B CN 110323055B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D28/00—Shaping by press-cutting; Perforating
- B21D28/02—Punching blanks or articles with or without obtaining scrap; Notching
- B21D28/06—Making more than one part out of the same blank; Scrapless working
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D—WORKING OR PROCESSING OF SHEET METAL OR METAL TUBES, RODS OR PROFILES WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21D28/00—Shaping by press-cutting; Perforating
- B21D28/02—Punching blanks or articles with or without obtaining scrap; Notching
- B21D28/14—Dies
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/26—Methods of annealing
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/74—Methods of treatment in inert gas, controlled atmosphere, vacuum or pulverulent material
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
- C21D9/52—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for wires; for strips ; for rods of unlimited length
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
- H01F1/14—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys
- H01F1/147—Alloys characterised by their composition
- H01F1/153—Amorphous metallic alloys, e.g. glassy metals
- H01F1/15333—Amorphous metallic alloys, e.g. glassy metals containing nanocrystallites, e.g. obtained by annealing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/0206—Manufacturing of magnetic cores by mechanical means
- H01F41/0233—Manufacturing of magnetic circuits made from sheets
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Abstract
The invention discloses a preparation device and a preparation method of a nanocrystalline product. The device comprises: the conveying device comprises a material conveying device and a release film conveying device; the stamping device comprises at least 1 set of die set, wherein the die set comprises 1 stamping die and 1 bottom die which are matched with each other, and the stamping die is a male die; the bottom die is a female die, and the female die is of a through hole structure. The preparation method comprises the following steps: the nanocrystalline strip is conveyed by the material conveying device and is punched into a nanocrystalline chip by a die set of the punching device, the nanocrystalline chip falls down through a through hole of the bottom die and is pasted on a release film conveyed by the release film conveying device below, a nanocrystalline product which is pasted on the release film and consists of the nanocrystalline chip is obtained, and the nanocrystalline strip and the release film synchronously move. The nanocrystalline product obtained by the preparation method provided by the invention has higher resistivity and lower magnetic loss.
Description
Technical Field
The invention belongs to the technical field of production and manufacturing of nanocrystalline products, and particularly relates to a device and a method for preparing a nanocrystalline product.
Background
In the field of electric power, with the maturation of high-frequency inversion technology, a large amount of traditional high-power linear power supplies are replaced by high-frequency switching power supplies, and in order to improve efficiency and reduce volume, the working frequency of the switching power supplies is higher and higher, which puts higher requirements on soft magnetic materials in the switching power supplies, while ferrite has low high-frequency loss, but still has many problems in the aspect of high power, namely, the saturation magnetic induction is low, and the volume of a transformer cannot be reduced; secondly, the Curie temperature is low, and the thermal stability is poor; thirdly, the finished product rate of the large-size iron core is low and the cost is high. The amorphous nanocrystalline has high saturation magnetic induction and extremely low high-frequency loss, has good thermal stability, and is the best choice of soft magnetic materials for high-power switching power supplies. In the field of electronic information, with the rapid development of computers, networks and communication technologies, there are increasing demands and higher demands for small-sized, light-weight, high-reliability and low-noise switching power supplies and network devices. For example, to reduce the size, the operating frequency of a computer switching power supply is increased from 20KHz to 500 KHz; in order to realize a low-voltage and high-current supply power supply mode of the CPU, a magnetic amplifier is adopted to stabilize output voltage; in order to eliminate various noises, a spike suppressor for suppressing line self-generated interference and a choke coil for suppressing common mode and differential mode of conducted interference are used. A large number of high-frequency magnetic devices are added in a switching power supply and interface equipment, and specially processed nanocrystalline products can play an excellent role here.
The nanocrystalline products manufactured mainly by the production modes of splintering and the like in the existing production technology cannot meet the performance requirements of existing equipment on high-frequency low-loss products in the market, so that a technical scheme of a novel high-frequency low-loss nanocrystalline product needs to be developed.
CN107243610A discloses an automatic coiling type nanocrystalline strip preparation device, which comprises a strip preparation device; two sets of parallel precise sliding guide rails which are horizontally arranged are arranged on one side of the belt manufacturing equipment, and the parallel precise sliding guide rails comprise a first precise sliding guide rail, a second precise sliding guide rail and a third precise sliding guide rail; the third precision sliding guide rail is provided with a winding device which can move along the third precision sliding guide rail; the winding device comprises a winding machine base, a winding motor and a grabbing wheel; the inside of the grabbing wheel is designed with an electromagnetic grabbing device, the outer side of the grabbing wheel is also provided with a winding core, and a high-sensitivity photoelectric switch is also arranged in the winding shaft; the bottom of the winding machine base is also provided with a guide rail slide block used for moving the winding device.
CN104900383A discloses a single/multilayer magnetic conductive sheet for wireless charging and a preparation method thereof, the single layer magnetic conductive sheet includes: the magnetic chip comprises a layer of magnetic chips, wherein a plurality of cracks are uniformly distributed on each magnetic chip and divide the magnetic chips into a plurality of chip units; insulating media are filled in the gaps of the plurality of cracks so as to enable the fragment units on two sides of the cracks to be mutually insulated; and the double-sided adhesive tape is adhered to one surface of the magnetic sheet, and a protective film consisting of the insulating medium is formed on the other surface of the magnetic sheet. The preparation method comprises the following steps: heat treatment, double-sided adhesive bonding, cracking treatment, gum dipping treatment and drying and curing treatment.
CN107979966A discloses a magnetic separation sheet applied to wireless charging and NFC and a preparation process thereof, wherein the preparation process comprises the following steps: constructing a magnetism isolating unit: taking a soft magnetic strip material with a sheet structure with two exposed surfaces as a primitive, attaching a double-sided adhesive tape to one exposed surface of the soft magnetic strip material, and pressing the other exposed surface of the soft magnetic strip material into a net-shaped texture; and constructing the magnetism isolating sheet.
However, the magnetic loss of the product prepared by the device or the method still needs to be reduced, and the resistivity of the product prepared by the device or the method still needs to be improved. Therefore, it is important to develop a better apparatus and method for preparing high-frequency low-loss nanocrystal products.
Disclosure of Invention
In view of the above-mentioned shortcomings in the prior art, the present invention aims to provide a device and a method for preparing a nanocrystal product. The nanocrystalline product prepared by the device and the method provided by the invention has high resistivity and low magnetic loss, and can meet the market demand for high-frequency low-loss strip products.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides an apparatus for producing a nanocrystalline product, the apparatus comprising:
the conveying device comprises a material conveying device and a release film conveying device, and the material conveying device is used for conveying the nanocrystalline strip to be treated; the release film conveying device is used for conveying release films; the release film conveying device is positioned below the material conveying and transferring device;
the stamping device comprises at least 1 set of die set, the die set comprises 1 stamping die and 1 bottom die which are matched with each other, and the stamping die is a male die and is positioned above the nanocrystalline strip to be processed and conveyed by the material conveying device; the bottom die is a female die and is positioned between the nanocrystalline strip to be processed conveyed by the material conveying device and the release film conveyed by the release film conveying device, the female die is of a through hole structure, and the stamping device is used for stamping the nanocrystalline strip to be processed conveyed by the material conveying device into a nanocrystalline chip and enabling the nanocrystalline chip to fall on the release film conveyed by the release film conveying device;
in the present invention, the stamping device comprises at least 1 set of die set, such as 1 set, 2 sets, 3 sets, 4 sets, 5 sets or 6 sets, etc.
In the device for preparing the nanocrystalline product, the female die (bottom film) is of a through hole structure, so that the nanocrystalline sheet punched by the male die (stamping die) can be ensured to leak through the through hole and be pasted on the release film below.
In the nanocrystalline product preparation device provided by the invention, the nanocrystalline chips are punched by the punching device and can be tightly arranged on the release film to obtain the nanocrystalline product with high resistivity.
The following is a preferred technical solution of the present invention, but not a limitation to the technical solution provided by the present invention, and the technical objects and advantageous effects of the present invention can be better achieved and achieved by the following preferred technical solution.
In a preferred embodiment of the present invention, the number of the die sets of the press apparatus is 2 to 6, for example, 2, 3, 4, 5 or 6, preferably 4. By adopting a plurality of sets of die sets, fewer bulges and through holes can be respectively arranged on the punching die and the bottom die of each set of die set, so that the difficulty in forming the die is reduced; however, too many die sets will cause the stamping process to be too long, which will affect the production efficiency.
Preferably, when the number of the die sets of the stamping device exceeds 1 set, the die sets are arranged along the direction of conveying the nanocrystalline strip by the material conveying device.
Preferably, when the number of sets of the die sets of the stamping device exceeds 1 set, the stamping films of the die sets are the same in size, and the protruding position of each stamping die does not coincide with the protruding positions of the other stamping dies. Here, the same size of the dies of the respective die sets allows the respective die sets to press the same portion of the nanocrystalline ribbon, thereby enabling the nanocrystalline ribbon to be used more efficiently. The projection position of each stamping die is not overlapped with the projection positions of other stamping dies, so that the situation that the part which is stamped off before on the nanocrystalline strip is continuously stamped to cause air pressure is avoided, the number of the projections on each stamping die can be reduced, and the difficulty in forming the die is further reduced.
The size of the punch die of each die set can be determined according to the size of the required nanocrystalline product.
Preferably, the protrusions of the die are circular protrusions.
As a preferable technical scheme of the present invention, the device for preparing a nanocrystal product further comprises a rolling device, wherein the rolling device comprises a rolling shaft for rolling the nanocrystal wafer on the release film conveyed by the release film conveying device, which is obtained after stamping.
The nano wafer adhered on the release film is rolled by the rolling device, so that the nano wafer and the release film are well adhered, the subsequent treatment process can be facilitated, the phenomenon that the punched nano crystal product and the release film are not easy to fall off in subsequent processing can be prevented, and meanwhile, the effect of slight splitting can be achieved.
Preferably, the roll pressing shaft of the roll pressing device comprises an upper roll pressing shaft and a lower roll pressing shaft, the upper roll pressing shaft is located above the release film conveyed by the release film conveying device, and the lower roll pressing shaft is located below the release film conveyed by the release film conveying device.
Preferably, the roller shaft transmission motor of the roller pressing device is a variable frequency motor. Stepless speed regulation can be performed by adopting a variable frequency motor.
Preferably, the rolling shaft is a steel shaft externally coated with rubber.
In a second aspect, the present invention provides a method for producing a nanocrystalline product using the nanocrystalline product production apparatus of the first aspect, the method comprising the steps of:
the nanocrystalline strip is conveyed by the material conveying device and is punched into a nanocrystalline chip by a die set of the punching device, the nanocrystalline chip falls down through a through hole of the bottom die and is pasted on a release film conveyed by the release film conveying device below, a nanocrystalline product which is pasted on the release film and consists of the nanocrystalline chip is obtained, and the nanocrystalline strip and the release film synchronously move.
The preparation method provided by the invention punches the nanocrystalline strip into the nanocrystalline chip by the punching process and applies the nanocrystalline chip on the release film to obtain the nanocrystalline product.
In the step (1), the synchronous motion of the nanocrystalline strip and the release film means that the nanocrystalline strip and the release film move at the same speed and in the same direction, so that the relative positions of the nanocrystalline strip and the release film are not changed, if a die set is used for multiple times of stamping, the nanocrystalline wafers stamped in the same area of the nanocrystalline strip in each time in the multiple stamping process can be attached to the same corresponding area of the release film, the nanocrystalline wafers can be closely arranged together, a product with uniformly distributed air gaps (namely, a product with uniformly distributed air gaps among the nanosheets) is formed, the resistivity of the nanocrystalline product is favorably improved, and the magnetic loss of the nanocrystalline product is reduced.
As a preferred technical solution of the present invention, the nanocrystal strip is a bonded nanocrystal strip.
Preferably, the preparation method of the attached nanocrystalline strip includes: covering a layer of double-sided adhesive tape without a base material on the upper surface of the annealed nanocrystalline tape, taking the nanocrystalline tape as a bottom layer, uncovering a separation film of the double-sided adhesive tape, then pasting another piece of nanocrystalline tape on the uncovered double-sided adhesive tape as a second layer, covering the double-sided adhesive tape on the upper surface of the nanocrystalline tape of the second layer, and so on until the required number of layers of the nanocrystalline tape is obtained, thus obtaining the pasted nanocrystalline tape.
Preferably, the thickness of the double-sided adhesive tape without a substrate is 0.005-0.01mm, such as 0.005mm, 0.007mm, 0.009mm or 0.01mm, but not limited to the enumerated values, and other unrecited values within the numerical range are also applicable.
Preferably, the method of annealing comprises the steps of: and (3) annealing the nanocrystalline original band in an annealing furnace filled with protective gas to obtain the annealed nanocrystalline band.
Preferably, the protective gas comprises nitrogen.
Preferably, the annealing temperature is 520 ℃ 580 ℃, such as 520 ℃, 530 ℃, 540 ℃, 550 ℃, 560 ℃, 570 ℃ or 580 ℃, but not limited to the recited values, and other values not recited within the range of values are equally applicable.
Preferably, the annealing time is 60-120min, such as 60min, 70min, 80min, 90min, 100min, 110min or 120min, but not limited to the recited values, and other values not recited in the range of values are also applicable.
As a preferred technical solution of the present invention, the punch die and the bottom die in the die set are formed according to the thickness and size of the desired nanocrystalline product.
In a preferred embodiment of the present invention, the number of the mold sets is 2 to 6, for example, 2, 3, 4, 5 or 6, preferably 4.
When the number of the die sets exceeds 1, the die sets are distributed on different stations along the direction of conveying the nanocrystalline strip by the material conveying device.
Preferably, when the number of sets of the die set exceeds 1 set, the method for stamping the nanocrystalline strip into the nanocrystalline chip comprises the following steps: after the nanocrystalline strip is stamped by one set of die set, the nanocrystalline strip is conveyed by the material conveying device, moved to the next station and stamped for the second time by the other set of die set, and the stamping of all the die sets is repeated in the same way.
The nanocrystalline strip and the release film are distributed under the driving of the material conveying device and the release film conveying device, and can be automatically moved to the next station to be stamped by another set of die set after being stamped by one set of die set.
When the number of the die sets exceeds 1, the nanocrystalline strip can be punched for multiple times to obtain the nanocrystalline product.
As a preferred technical solution of the present invention, the method further comprises: and conveying the release film coated with the nanocrystalline product into a rolling device by a release film conveying device, and rolling the nanocrystalline product to obtain the rolled nanocrystalline product.
Preferably, the rolling device has a rolling axis rotational linear velocity of 0.8-1.2m/min, such as 0.8m/min, 0.9m/min, 1.0m/min, 1.1m/min or 1.2m/min, but not limited to the recited values, and other values not recited in this range are equally applicable, preferably 1 m/min.
As a preferred technical solution of the present invention, the method further comprises: and winding or punching the rolled nanocrystalline product into other shapes to obtain a finished nanocrystalline product.
As a further preferable technical scheme of the preparation method, the method comprises the following steps:
(1) annealing the nanocrystalline original band in an annealing furnace filled with protective gas, wherein the annealing temperature is 520 ℃ and 580 ℃, and the annealing time is 60-120min, so as to obtain an annealed nanocrystalline band;
(2) covering a layer of double-sided adhesive tape without a base material on the upper surface of the annealed nanocrystalline tape material in the step (1), taking the nanocrystalline tape material as a bottom layer, uncovering a separation film of the double-sided adhesive tape, then pasting another piece of nanocrystalline tape material on the uncovered double-sided adhesive tape as a second layer, covering the double-sided adhesive tape on the upper surface of the nanocrystalline tape material of the second layer, and repeating the process until the required number of layers of the nanocrystalline tape material is laminated to obtain the laminated nanocrystalline tape material;
(3) conveying the attached nanocrystalline strips obtained in the step (2) by a material conveying device, punching the attached nanocrystalline strips into nanocrystalline chips by a die set of a punching device, wherein the number of the die sets is 4, the attached nanocrystalline strips are punched by a die set 1 and then conveyed by the material conveying device, moving to the next station to be punched for the second time by the die set 2, so that the nanocrystalline chips obtained by punching each time fall down through a through hole of a bottom die and are attached to a release film conveyed by the release film conveying device below, so that nanocrystalline products attached to the release film and composed of the nanocrystalline chips are obtained, and the attached nanocrystalline strips and the release film synchronously move;
(4) conveying the release film coated with the nanocrystalline product into a rolling device by a release film conveying device, and rolling the nanocrystalline product, wherein the linear rotating speed of a rolling shaft of the rolling device is 1m/min, so as to obtain a rolled nanocrystalline product;
(5) and (4) winding or stamping the rolled nanocrystalline product obtained in the step (4) into other shapes to obtain a finished nanocrystalline product.
Compared with the prior art, the invention has the following beneficial effects:
(1) the nanocrystalline product preparation device provided by the invention is an automatic linkage device, can realize automatic conveying of nanocrystalline strips and release films through the conveying device, obtains nanocrystalline chips to form nanocrystalline products in a stamping mode, is suitable for preparing high-frequency low-loss nanocrystalline products, can carry out continuous production, and can process products with different sizes and specifications by adjusting a stamping die.
(2) The nanocrystalline product prepared by the preparation method of the nanocrystalline product has high saturation magnetic induction intensity, high permeability, higher resistivity, good thermal stability and lower magnetic loss, wherein the saturation magnetic induction intensity is more than 1.15T, the permeability is more than 100, and the loss (the imaginary part of the permeability) is 125kw/m3The resistivity is not less than 578.06m Ω.
Drawings
Fig. 1 is a schematic structural diagram of a device for preparing a nanocrystal product according to embodiment 1 of the present invention;
fig. 2 is a schematic diagram of the appearance of a stamping die of a 4-set die set of a stamping device in a nanocrystalline product manufacturing apparatus according to example 1 of the present invention;
FIG. 3 is a schematic view of a nano-wafer attached to a release film after a first stamping, a second stamping, a third stamping and a fourth stamping in example 1 of the present invention;
the device comprises a material conveying device, a 2-release film conveying device, a 301-first stamping die, a 302-second stamping die, a 303-third stamping die, a 304-fourth stamping die, a 4-bottom die, a 5-rolling device, a 6-nanocrystalline strip and a 7-release film.
Detailed Description
In order to better illustrate the present invention and facilitate the understanding of the technical solutions of the present invention, the present invention is further described in detail below. However, the following examples are only simple examples of the present invention and do not represent or limit the scope of the present invention, which is defined by the claims.
The following are typical but non-limiting examples of the invention:
example 1
This example provides a device for preparing a nanocrystal product, which has a structure as shown in fig. 1. The nanocrystal product preparation facilities that this embodiment provided includes:
the conveying device comprises a material conveying device 1 and a release film conveying device 2, wherein the material conveying device 1 is used for conveying a nanocrystalline strip material 6 to be treated; the release film conveying device 2 is used for conveying a release film 7; the release film conveying device 2 is positioned below the material conveying and transferring device 1.
A stamping device, including 4 sets of die sets, where the 4 sets of die sets are distributed from left to right in fig. 1 (i.e. arranged along the direction in which the material conveying device 1 conveys the nanocrystalline strip 6), and each of the 4 sets of die sets includes 1 die (i.e. the first die 301, the second die 302, the third die 303, and the fourth die 304 in fig. 1) and 1 bottom die (i.e. the bottom die 4 in fig. 1, where the bottom die 4 includes 4 bottom dies, and from left to right are the first bottom die, the second bottom die, the third bottom die, and the fourth bottom die respectively matched with the corresponding die, and the 4 bottom dies are connected together to form a whole and collectively represented by the bottom die 4 in fig. 1), and the die is a male die and is located above the nanocrystalline strip 6 to be processed conveyed by the material conveying device 1; the die block is the die, is located pending nanocrystalline strip 6 that material conveyer 1 carried and from type membrane conveyer 2 carried between the type membrane 7, the die is the through-hole structure, stamping device is used for 6 punching presses into the nanometer wafer with pending nanocrystalline strip that material conveyer 1 carried, and makes the nanometer wafer falls by being carried from type membrane conveyer 2 from type membrane 7.
Fig. 2 is a schematic diagram showing the appearance of a die of a 4-die set of a stamping device in an apparatus for producing a nanocrystalline product according to the present embodiment, in which the first die 301, the second die 302, the third die 303 and the fourth die 304 have the same size, but the positions of the circular protrusions on the 4 dies are different from each other, and the positions of the protrusions on each die do not coincide with the positions of the protrusions on the other dies.
And the rolling device 5 comprises a rolling shaft and is used for rolling the nano wafer which is positioned on the release film conveyed by the release film conveying device and obtained after stamping. The rolling shafts of the rolling device comprise an upper rolling shaft and a lower rolling shaft, the upper rolling shaft is positioned above the release film conveyed by the release film conveying device, and the lower rolling shaft is positioned below the release film conveyed by the release film conveying device; the roller shaft transmission motor of the rolling device is a variable frequency motor, and the roller shaft is a steel shaft coated with rubber at the outer part.
The embodiment also provides a method for preparing the nanocrystalline by using the nanocrystalline product preparation device, which comprises the following steps:
(1) annealing the nanocrystalline original band in an annealing furnace filled with protective gas, wherein the annealing temperature is 550 ℃ and the annealing time is 90min, and obtaining an annealed nanocrystalline band;
(2) covering a layer of double-sided adhesive tape without base materials on the upper surface of the annealed nanocrystalline tape material in the step (1), taking the nanocrystalline tape material as a bottom layer, uncovering a separation film of the double-sided adhesive tape, then pasting another piece of nanocrystalline tape material on the uncovered double-sided adhesive tape as a second layer, covering the double-sided adhesive tape on the upper surface of the nanocrystalline tape material of the second layer, and pasting and synthesizing 4 layers of nanocrystalline tape materials by analogy to obtain the pasted nanocrystalline tape material 6;
(3) conveying a nanocrystalline strip 6 by a material conveying device 1, punching the nanocrystalline strip into nanocrystalline chips by a die set of a punching device, wherein the number of the die set is 4, the nanocrystalline strip is punched by a 1 st die set, then the material conveying device 1 drives the nanocrystalline strip 6 to move to the next station to be punched for the second time by a 2 nd die set, so that the nanocrystalline strip is punched by the 4 sets of die sets, the nanocrystalline chips obtained by each punching fall down through a through hole of a bottom die 4 and are adhered to a release film 7 conveyed by a release film conveying device 2 below, nanocrystalline products adhered to the release film and composed of the nanocrystalline strips are obtained, and the nanocrystalline strip and the release film synchronously move;
(4) conveying the release film coated with the nanocrystalline product into a rolling device by a release film conveying device, and rolling the nanocrystalline product, wherein the linear rotating speed of a rolling shaft of the rolling device is 1m/min, so as to obtain a rolled nanocrystalline product;
(5) and (4) winding or stamping the rolled nanocrystalline product obtained in the step (4) into other shapes to obtain a finished nanocrystalline product.
In the step (3), the schematic diagram of the nano-wafer attached to the release film obtained after each stamping is shown in fig. 3, the schematic diagram of the nano-wafer attached to the release film after the first stamping, the second stamping, the third stamping and the fourth stamping is shown from left to right in the figure, it can be seen that the arrangement of the nano-wafers becomes tighter and tighter as the stamping times increase, the graph on the rightmost side of fig. 3 is the schematic diagram of the nano-wafer product obtained after the 4 stamping, and the nano-wafers are closely arranged together and have uniformly distributed air gaps.
A128 KHz nanocrystalline raw tape was processed according to the method of this example to prepare a nanocrystalline product, and the nanocrystalline product was tested for its properties, the results of which are shown in Table 1.
Example 2
The apparatus for preparing the nanocrystal product of this example was the same as in example 1.
The difference between the method for preparing the nanocrystalline product of this example and example 1 is that, in step (1), the temperature of the annealing treatment is 520 ℃, and the time of the annealing treatment is 60 min; in the step (4), the linear rotating speed of the rolling shaft of the rolling device is 0.8 m/min.
The same 128KHz nanocrystalline raw tape as in example 1 was processed to prepare nanocrystalline products according to the method of this example, and the nanocrystalline products were tested for their properties, the results of which are shown in table 1.
Example 3
The apparatus for preparing the nanocrystal product of this example was the same as in example 1.
The difference between the preparation method of the nanocrystalline product of this example and example 1 is that in step (1), the temperature of the annealing treatment is 580 ℃, and the time of the annealing treatment is 120 min; in the step (4), the linear rotating speed of the rolling shaft of the rolling device is 1.2 m/min.
The same 128KHz nanocrystalline raw tape as in example 1 was processed to prepare nanocrystalline products according to the method of this example, and the nanocrystalline products were tested for their properties, the results of which are shown in table 1.
Example 4
The apparatus for producing a nanocrystal product of the present embodiment is similar to that of embodiment 1 except that the press apparatus includes only 2 sets of die sets, that is, only 2 dies (the first die 301 and the second die 302) and the bottom die 4 (including 2 bottom dies, and the first bottom die and the second bottom die respectively fit to the respective dies from left to right).
The method for preparing a nanocrystal product in this embodiment refers to embodiment 1, except that a nanocrystal product composed of nanocrystals is obtained by only stamping 2 sets of die sets in step (3).
The same 128KHz nanocrystalline raw tape as in example 1 was processed to prepare nanocrystalline products according to the method of this example, and the nanocrystalline products were tested for their properties, the results of which are shown in table 1.
Example 5
The nanocrystalline product manufacturing apparatus according to this example refers to example 1 except that the press apparatus includes 6 die sets, that is, 6 dies and a die block fitted to the dies, and the positions of the projections on the dies are adjusted so that the positions of the projections on each die do not coincide with those of the other dies.
The method for preparing a nanocrystal product in this example refers to example 1, except that a nanocrystal product composed of nanocrystals is obtained by stamping 6 sets of die sets in step (3).
The same 128KHz nanocrystalline raw tape as in example 1 was processed to prepare nanocrystalline products according to the method of this example, and the nanocrystalline products were tested for their properties, the results of which are shown in table 1.
Comparative example 1
The specific method for producing a nanocrystal product of this comparative example is as described in example 1, except that instead of producing a nanocrystal product using the production apparatus provided by the present invention, a conventional breaking apparatus was used, and instead of performing the operations of step (3) and step (4) in example 1, the nanocrystal was broken, and the specific breaking method was as described in CN 104900383A. The nanocrystalline raw tape used in this comparative example was the same as the nanocrystalline raw tape of example 1.
The same 128KHz nanocrystalline raw tape as in example 1 was processed to prepare a nanocrystalline product according to the method of this comparative example, and the nanocrystalline product was tested for its properties, and the results are shown in table 1.
Test method
For the nanocrystalline products obtained in the embodiments and the comparative examples, a SY-8218 instrument and test conditions of 128KHz, 160A/M and 25 ℃ are adopted to test the saturation magnetic induction intensity; testing magnetic permeability by using a SY-8218 instrument and testing conditions of 100KHz/100MT and 25 ℃; the loss was measured using a SY-8218 instrument and test conditions of 100KHz/100MT and 25 ℃. The resistivity is tested by adopting a four-probe method, and the test current intensity is 5 mA.
TABLE 1
It can be known from the above embodiments and comparative examples that the nanocrystal product preparation apparatus provided in embodiments 1 to 5 of the present invention is an automated linkage device, and can realize automatic conveyance of a nanocrystal tape and a release film through a conveying device, and obtain a nanocrystal product composed of nanocrystals in a stamping manner, and is suitable for preparing a high-frequency low-loss nanocrystal product, and can perform continuous production. And punching the nanocrystalline strip into a nanocrystalline chip and applying the nanocrystalline chip on the release film through a punching process in the nanocrystalline product preparation method to obtain the nanocrystalline product. In the embodiments 1 to 5, the mold set is used for multiple stamping, and due to the synchronous motion of the nanocrystalline strip and the release film, the nanocrystalline wafers stamped in each time in the same region of the nanocrystalline strip in the multiple stamping process can be attached to the same corresponding region of the release film, so that the nanocrystalline wafers can be tightly arranged together to form a product with uniformly distributed air gaps, the resistivity of the nanocrystalline product can be improved, and the magnetic loss of the nanocrystalline product can be reduced. The real part of the magnetic permeability of the nanocrystalline product prepared by the embodiment is as low as 100, the magnetic permeability is low, the magnetic loss is less, and the resistivity is high.
The comparative example 1 adopts the traditional splinter scheme, and the product has poor performance compared with the nanocrystalline obtained by adopting the stamping method in the examples 1-5 because of the irregular shape of the traditional splinter, the different sizes of the splinters and the non-uniform distributed air gaps.
The applicant states that the present invention is illustrated by the above examples to show the detailed process equipment and process flow of the present invention, but the present invention is not limited to the above detailed process equipment and process flow, i.e. it does not mean that the present invention must rely on the above detailed process equipment and process flow to be implemented. It should be understood by those skilled in the art that any modification of the present invention, equivalent substitutions of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
Claims (20)
1. An apparatus for producing a nanocrystalline product, the apparatus comprising:
the conveying device comprises a material conveying device and a release film conveying device, and the material conveying device is used for conveying the nanocrystalline strip to be treated; the release film conveying device is used for conveying release films; the release film conveying device is positioned below the material conveying and transferring device;
the stamping device comprises 2-6 sets of die sets, each set of die set comprises 1 stamping die and 1 bottom die which are matched with each other, and the stamping dies are male dies and are positioned above the nanocrystalline strips to be processed, which are conveyed by the material conveying device; the bottom die is a female die and is positioned between the nanocrystalline strip to be processed conveyed by the material conveying device and the release film conveyed by the release film conveying device, the female die is of a through hole structure, and the stamping device is used for stamping the nanocrystalline strip to be processed conveyed by the material conveying device into a nanocrystalline chip and enabling the nanocrystalline chip to fall on the release film conveyed by the release film conveying device;
the die sets of the stamping device are arranged along the direction of conveying the nanocrystalline strip by the material conveying device, the sizes of the stamping dies of the die sets are the same, and the protruding position of each stamping die is not overlapped with the protruding positions of other stamping dies;
the nanocrystalline product preparation device further comprises a rolling device, wherein the rolling device comprises a rolling shaft and is used for rolling the nanocrystalline chip which is obtained after stamping and is positioned on the release film conveyed by the release film conveying device.
2. The apparatus of claim 1, wherein the number of die sets of the stamping apparatus is 4.
3. The apparatus for producing a nanocrystalline product according to claim 1, wherein the projection of the die is a circular projection.
4. The apparatus for preparing a nano-crystalline product according to claim 1, wherein the roll shafts of the roll pressing device include an upper roll shaft positioned above the release film conveyed by the release film conveying device and a lower roll shaft positioned below the release film conveyed by the release film conveying device.
5. The apparatus of claim 1, wherein the roller shaft driving motor of the roller press device is a variable frequency motor.
6. The apparatus of claim 1, wherein the roller shaft is a steel shaft externally coated with rubber.
7. A method for producing a nanocrystalline product using the nanocrystalline product producing apparatus according to any one of claims 1 to 6, characterized in that the method includes the steps of:
conveying a nanocrystalline strip by a material conveying device, punching the nanocrystalline strip into a nanocrystalline chip by a die set of a punching device, enabling the nanocrystalline chip to fall down through a through hole of a bottom die and be attached to a release film conveyed by a release film conveying device below the nano chip to obtain a nanocrystalline product attached to the release film and composed of the nanocrystalline chip, and enabling the nanocrystalline strip and the release film to move synchronously;
the method further comprises the following steps: and conveying the release film coated with the nanocrystalline product into a rolling device by a release film conveying device, and rolling the nanocrystalline product to obtain the rolled nanocrystalline product.
8. The method of claim 7, wherein the nanocrystalline ribbon is a bonded nanocrystalline ribbon.
9. The method of claim 8, wherein the method for preparing the attached nanocrystalline ribbon comprises: covering a layer of double-sided adhesive tape without a base material on the upper surface of the annealed nanocrystalline tape, taking the nanocrystalline tape as a bottom layer, uncovering a separation film of the double-sided adhesive tape, then pasting another piece of nanocrystalline tape on the uncovered double-sided adhesive tape as a second layer, covering the double-sided adhesive tape on the upper surface of the nanocrystalline tape of the second layer, and so on until the required number of layers of the nanocrystalline tape is obtained, thus obtaining the pasted nanocrystalline tape.
10. The method of claim 9, wherein the substrate-free double-sided adhesive tape has a thickness of 0.005-0.01 mm.
11. The method of claim 9, wherein the annealing method comprises the steps of: and (3) annealing the nanocrystalline original band in an annealing furnace filled with protective gas to obtain the annealed nanocrystalline band.
12. The method of claim 11, wherein the protective gas comprises nitrogen.
13. The method as claimed in claim 11, wherein the temperature of the annealing treatment is 520-580 ℃.
14. The method of claim 11, wherein the annealing is performed for a period of 60-120 min.
15. The method of claim 7, wherein the punch and die of the die set are sized according to the desired thickness and size of the desired nanocrystalline product.
16. The method of claim 7, wherein when the number of sets of the die set is greater than 2, the method of stamping the nanocrystalline ribbon into the nano-wafers comprises: after the nanocrystalline strip is stamped by one set of die set, the nanocrystalline strip is conveyed by the material conveying device, moved to the next station and stamped for the second time by the other set of die set, and the stamping of all the die sets is repeated in the same way.
17. The method according to claim 7, wherein the rolling shaft of the rolling device rotates at a linear speed of 0.8-1.2 m/min.
18. The method according to claim 7, wherein the rolling shaft of the rolling device rotates at a linear speed of 1 m/min.
19. The method of claim 7, further comprising: and winding or punching the rolled nanocrystalline product into other shapes to obtain a finished nanocrystalline product.
20. The method according to claim 7, characterized in that it comprises the steps of:
(1) annealing the nanocrystalline original band in an annealing furnace filled with protective gas, wherein the annealing temperature is 520 ℃ and 580 ℃, and the annealing time is 60-120min, so as to obtain an annealed nanocrystalline band;
(2) covering a layer of double-sided adhesive tape without a base material on the upper surface of the annealed nanocrystalline tape material in the step (1), taking the nanocrystalline tape material as a bottom layer, uncovering a separation film of the double-sided adhesive tape, then sticking another piece of nanocrystalline tape material on the uncovered double-sided adhesive tape as a second layer, covering the double-sided adhesive tape on the upper surface of the nanocrystalline tape material of the second layer, and so on until the required number of layers of the nanocrystalline tape material is obtained by sticking, thus obtaining the stuck nanocrystalline tape material;
(3) conveying the attached nanocrystalline strips obtained in the step (2) by a material conveying device, punching the attached nanocrystalline strips into nanocrystalline chips by a die set of a punching device, wherein the number of the die sets is 4, the attached nanocrystalline strips are punched by a die set 1 and then conveyed by the material conveying device, moving to the next station to be punched for the second time by the die set 2, so that the nanocrystalline chips obtained by punching each time fall down through a through hole of a bottom die and are attached to a release film conveyed by the release film conveying device below, so that nanocrystalline products attached to the release film and composed of the nanocrystalline chips are obtained, and the attached nanocrystalline strips and the release film synchronously move;
(4) conveying the release film coated with the nanocrystalline product into a rolling device by a release film conveying device, and rolling the nanocrystalline product, wherein the linear rotating speed of a rolling shaft of the rolling device is 1m/min, so as to obtain a rolled nanocrystalline product;
(5) and (4) winding or stamping the rolled nanocrystalline product obtained in the step (4) into other shapes to obtain a finished nanocrystalline product.
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| CN111976039B (en) * | 2020-08-20 | 2022-03-29 | 苏州安洁科技股份有限公司 | Nano wafer knife stamping method without loss of inductance |
| CN112289578B (en) * | 2020-10-16 | 2022-05-24 | 横店集团东磁股份有限公司 | Magnetic stripe-shaped nanocrystalline magnetic isolation sheet and preparation method and application thereof |
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