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CN110246973B - Quantum dot device and electronic apparatus - Google Patents

Quantum dot device and electronic apparatus Download PDF

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Publication number
CN110246973B
CN110246973B CN201910173978.0A CN201910173978A CN110246973B CN 110246973 B CN110246973 B CN 110246973B CN 201910173978 A CN201910173978 A CN 201910173978A CN 110246973 B CN110246973 B CN 110246973B
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quantum dot
hole transport
transport material
equal
layer
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CN110246973A (en
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徐弘圭
张银珠
韩文奎
金泰豪
丁大荣
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/167—Electron transporting layers between the light-emitting layer and the anode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/30—Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00—Properties of the organic materials covered by group H10K85/00
    • H10K2101/40—Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass

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  • Crystallography & Structural Chemistry (AREA)
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  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

Disclosed are a quantum dot device and a display device, the quantum dot device including an anode, a hole injection layer disposed on the anode, a hole transport layer disposed on the hole injection layer, a quantum dot layer disposed on the hole transport layer and including quantum dots, and a cathode disposed on the quantum dot layer, wherein the hole transport layer includes a hole transport material and an electron transport material, and a LUMO energy level difference between the quantum dot layer and the electron transport material is less than or equal to about 0.5eV.

Description

Quantum dot device and electronic apparatus
Cross reference to related applications
The present application claims priority and benefit from korean patent application No.10-2018-0028285, filed on 3 months 9 in 2018, and korean patent application No.10-2019-0025980, filed on 3 months 6 in 2019, which are incorporated herein by reference in their entireties.
Technical Field
Quantum dot devices and electronic devices are disclosed.
Background
Unlike bulk materials, the physical properties of nanoparticles (e.g., bandgap, melting point, etc.) as inherent properties can be controlled by varying their particle size. For example, a semiconductor nanocrystal, also referred to as a quantum dot, may emit light at a wavelength corresponding to the size of the quantum dot when supplied with light or electrical energy. Therefore, quantum dots can be used as light emitting elements that emit light of a specific wavelength.
Recently, research into quantum dot devices using quantum dots as light emitting elements is underway. However, quantum dots are different from conventional light emitting elements, and thus new methods of improving the performance of quantum dot devices are needed.
Disclosure of Invention
One embodiment provides a quantum dot device capable of achieving improved performance.
Another embodiment provides an electronic device comprising the quantum dot device.
According to one embodiment, a quantum dot device includes an anode, a hole injection layer disposed on the anode, a hole transport layer disposed on the hole injection layer, a quantum dot layer disposed on the hole transport layer and including quantum dots, and a cathode disposed on the quantum dot layer, wherein the hole transport layer includes a hole transport material and an electron transport material, and a LUMO energy level difference between the quantum dot layer and the electron transport material is less than or equal to about 0.5eV.
The electron transport material may have a LUMO level of about 2.7eV to about 3.5eV.
The hole transport material may have a HOMO level greater than or equal to about 5.4eV.
The hole transport material may have a HOMO level of about 5.4eV to about 7.0eV.
The hole transport material may include a polymer, and the electron transport material may include a low molecular weight compound.
The hole transport material may include a first hole transport material and a second hole transport material, wherein the second hole transport material may have a higher HOMO level than the first hole transport material.
The second hole transport material may have a HOMO level of about 5.4eV to about 7.0eV.
The hole transporting material and the electron transporting material may be mixed.
The electron transport material may be included in the same amount as the hole transport material or in an amount less than the hole transport material.
The difference between the HOMO levels of the quantum dot layer and the hole transport material may be less than or equal to about 0.7eV.
The quantum dot layer may have a HOMO level greater than or equal to about 5.6eV.
The hole transport layer and the quantum dot layer may be in contact with each other.
The hole injection layer may include a conductive polymer.
The quantum dots may include non-cadmium based quantum dots.
The quantum dots may include: a core comprising a first semiconductor compound comprising zinc (Zn), tellurium (Te), and selenium (Se), and a shell disposed on at least a portion of the core and comprising a second semiconductor compound different from the first semiconductor compound.
The second semiconductor compound may be ZnSeS, znS, or a combination thereof.
According to another embodiment, an electronic device comprises the quantum dot device.
The performance of the quantum dot device may be improved.
Drawings
Fig. 1 is a schematic cross-sectional view of a quantum dot device according to an embodiment, an
Fig. 2 is a diagram showing an example of energy levels of the quantum dot device of fig. 1.
Detailed Description
Hereinafter, example embodiments of the present disclosure will be described in detail so that those skilled in the art will understand them. This disclosure may, however, be embodied in many different forms and should not be construed as limited to the example embodiments set forth herein.
In the drawings, the thickness of layers, films, panels, regions, etc. are exaggerated for clarity. Like reference numerals refer to like elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" another element, there are no intervening elements present.
Hereinafter, work function, HOMO level, and LUMO level are expressed as absolute values from vacuum level. Further, when the work function, HOMO level, or LUMO level is referred to as "deep", "high", or "large", the work function, HOMO level, or LUMO level has a large absolute value of "0eV" based on the vacuum level, and when the work function, HOMO level, or LUMO level is referred to as "shallow", "low", or "small", the work function, HOMO level, or LUMO level has a small absolute value of "0eV" based on the vacuum level.
Hereinafter, a quantum dot device according to an embodiment is described with reference to the accompanying drawings.
Fig. 1 is a schematic cross-sectional view of a quantum dot device according to an embodiment, and fig. 2 is a diagram showing an example of energy levels of the quantum dot device of fig. 1.
Referring to fig. 1, a quantum dot device 10 according to an embodiment includes an anode 11 and a cathode 16 facing each other, a quantum dot layer 14 disposed between the anode 11 and the cathode 16, and a hole injection layer 12 and a hole transport layer 13 disposed between the anode 11 and the quantum dot layer 14. For example, the quantum dot device 10 includes an anode 11, a hole injection layer 12 disposed on the anode 11, a hole transport layer 13 disposed on the hole injection layer 12, a quantum dot layer 14 disposed on the hole transport layer 13, an electron assist layer 15 disposed on the quantum dot layer 14, and a cathode 16 disposed on the electron assist layer 15.
A substrate (not shown) may be provided at the anode 11 or cathode 16 side. The substrate may be made, for example, from: inorganic materials such as glass; organic materials such as polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyethersulfone, or combinations thereof; or a silicon wafer.
Anode 11 may be made of a conductor having a large work function to aid hole injection and may be made of, for example, a metal, metal oxide, and/or conductive polymer. Anode 11 may be made, for example, from: metals or alloys thereof such as nickel, platinum, vanadium, chromium, copper, zinc, and gold; conductive metal oxides such as zinc oxide, indium oxide, tin oxide, indium Tin Oxide (ITO), indium Zinc Oxide (IZO), or fluorine-doped tin oxide; or a combination of a metal and an oxide such as a combination of Al and ZnO or a combination of Sb and SnO 2, but is not limited thereto.
Cathode 16 may be made of a conductor having a small work function to aid in electron injection and may be made of, for example, a metal, metal oxide, and/or conductive polymer. Cathode 16 may be, for example: metals such as magnesium, calcium, sodium, potassium, titanium, indium, yttrium, lithium, gadolinium, aluminum, silver, tin, lead, cesium, barium, and the like, or alloys thereof; the multilayered structural materials such as LiF/Al, liO 2/Al, liF/Ca, liq/Al, and BaF 2/Ca are not limited thereto.
At least one of anode 11 and cathode 16 may be a light transmissive electrode and the light transmissive electrode may be made, for example, from: a conductive oxide such as zinc oxide, indium oxide, tin oxide, indium Tin Oxide (ITO), indium Zinc Oxide (IZO), or fluorine doped tin oxide, or a single or multiple metal thin layer. When one of the anode 11 and the cathode 16 is a non-light transmissive electrode, it may be made of, for example, an opaque conductor such as aluminum (Al), silver (Ag), or gold (Au).
The quantum dot layer 14 includes quantum dots. The quantum dots may be semiconductor nanocrystals, which are generally conceptual, and may have various shapes such as spherical semiconductor nanocrystal particles, quantum rods, and quantum sheets. Here, the quantum rod may represent a quantum dot having an aspect ratio (aspect ratio) of greater than about 1, for example, an aspect ratio of greater than or equal to about 2, greater than or equal to about 3, or greater than or equal to about 5. For example, the quantum rod may have an aspect ratio of less than or equal to about 50, less than or equal to about 30, or less than or equal to about 20. In one embodiment, the quantum rod may have an aspect ratio of about 2 to about 50, or about 3 to about 30, or about 5 to about 20. The quantum dots may have a particle diameter (average maximum particle size for non-spherical shapes) of, for example, from about 1nm to about 100nm, from about 1nm to about 80nm, from about 1nm to about 50nm, or from about 1nm to about 20 nm.
The band gap of the quantum dots can be controlled according to the size and composition of the quantum dots, and thus the photoluminescence or electroluminescence wavelength can be controlled. For example, as the size of the quantum dot increases, the quantum dot may have a narrower energy bandgap and thus emit light in a relatively long wavelength region, while as the size of the quantum dot decreases, the quantum dot may have a wider energy bandgap and thus emit light in a relatively short wavelength region.
For example, the quantum dots may emit light in a predetermined wavelength region, e.g., the visible light region, depending on their size and/or composition. For example, the quantum dots may emit blue light, red light, or green light, and the blue light may have a peak emission wavelength, for example, in a range of about 430nm to about 470nm, the red light may have a peak emission wavelength, for example, in a range of about 620nm to about 660nm, and the green light may have a peak emission wavelength, for example, in a range of about 510nm to about 550 nm.
The quantum dots can have, for example, a quantum yield of greater than or equal to about 10%, greater than or equal to about 30%, greater than or equal to about 50%, greater than or equal to about 60%, greater than or equal to about 70%, or greater than or equal to about 90%.
The quantum dots may have a relatively narrow half width (FWHM) in their electroluminescent spectrum. Here, the FWHM is a wavelength width corresponding to half of the peak emission intensity, and as the FWHM is narrower, light in a narrower wavelength region can be emitted and higher color purity can be obtained. The quantum dots can have FWHM of, for example, less than or equal to about 50nm, less than or equal to about 49nm, less than or equal to about 48nm, less than or equal to about 47nm, less than or equal to about 46nm, less than or equal to about 45nm, less than or equal to about 44nm, less than or equal to about 43nm, less than or equal to about 42nm, less than or equal to about 41nm, less than or equal to about 40nm, less than or equal to about 39nm, less than or equal to about 38nm, less than or equal to about 37nm, less than or equal to about 36nm, less than or equal to about 35nm, less than or equal to about 34nm, less than or equal to about 33nm, less than or equal to about 32nm, less than or equal to about 31nm, less than or equal to about 30nm, less than or equal to about 29nm, or less than or equal to about 28nm in their electroluminescent spectra.
For example, the quantum dots may be, for example, group II-VI semiconductor compounds, group III-V semiconductor compounds, group IV-VI semiconductor compounds, group IV semiconductor elements or compounds, group I-III-VI semiconductor compounds, group I-II-IV-VI semiconductor compounds, group II-III-V semiconductor compounds, or combinations thereof. The group II-VI semiconductor compound may be selected, for example, from: a binary compound selected from CdSe, cdTe, znS, znSe, znTe, znO, hgS, hgSe, hgTe, mgSe, mgS, and mixtures thereof; A ternary compound selected from CdSeS、CdSeTe、CdSTe、ZnSeS、ZnSeTe、ZnSTe、HgSeS、HgSeTe、HgSTe、CdZnS、CdZnSe、CdZnTe、CdHgS、CdHgSe、CdHgTe、HgZnS、HgZnSe、HgZnTe、MgZnSe、MgZnS、 and mixtures thereof; and quaternary compounds selected from HgZnTeS, cdZnSeS, cdZnSeTe, cdZnSTe, cdHgSeS, cdHgSeTe, cdHgSTe, hgZnSeS, hgZnSeTe, hgZnSTe, and mixtures thereof, but not limited thereto. The III-V semiconductor compound may be selected, for example, from: a binary compound selected from GaN, gaP, gaAs, gaSb, alN, alP, alAs, alSb, inN, inP, inAs, inSb, and mixtures thereof; A ternary compound selected from GaNP, gaNAs, gaNSb, gaPAs, gaPSb, alNP, alNAs, alNSb, alPAs, alPSb, inNP, inNAs, inNSb, inPAs, inPSb, gaAlNP, and mixtures thereof; and quaternary compounds selected from GaAlNAs、GaAlNSb、GaAlPAs、GaAlPSb、GaInNP、GaInNAs、GaInNSb、GaInPAs、GaInPSb、InAlNP、InAlNAs、InAlNSb、InAlPAs、InAlPSb、 and mixtures thereof, but not limited thereto. The group IV-VI semiconductor compound may be selected, for example, from: a binary compound selected from SnS, snSe, snTe, pbS, pbSe, pbTe, and mixtures thereof; A ternary compound selected from SnSeS, snSeTe, snSTe, pbSeS, pbSeTe, pbSTe, snPbS, snPbSe, snPbTe, and mixtures thereof; and quaternary compounds selected from SnPbSSe, snPbSeTe, snPbSTe, and mixtures thereof, but not limited thereto. The group IV semiconductor element or compound may be selected, for example, from: a semiconductor element selected from the group consisting of Si, ge, and mixtures thereof; and a binary semiconductor compound selected from SiC, siGe, and mixtures thereof, but is not limited thereto. The group I-III-VI semiconductor compound may be selected from, for example, cuInSe 2、CuInS2, cuInGaSe, cuInGaS, and mixtures thereof, but is not limited thereto. The group I-III-VI semiconductor compound may be selected from, for example, cuInSe 2、CuInS2, cuInGaSe, cuInGaS, and mixtures thereof, but is not limited thereto. The group II-III-V semiconductor compound may include, for example, inZnP, but is not limited thereto.
The quantum dots may comprise the binary semiconductor compound, the ternary semiconductor compound, or the quaternary semiconductor compound in a substantially uniform concentration or in a locally different concentration profile.
For example, the quantum dots may include non-cadmium based quantum dots. Cadmium (Cd) can cause serious environmental/health problems and is an element limited by the hazardous substances limitation directive (RoHS) in many countries, and thus the non-cadmium-based quantum dots can be effectively used.
For example, the quantum dots may be semiconductor compounds including zinc (Zn), tellurium (Te), and selenium (Se). For example, in the semiconductor compound, the amount of tellurium (Te) may be smaller than the amount of selenium (Se). The semiconductor compound may emit blue light having a peak emission wavelength in a wavelength region less than or equal to about 470nm, for example in a wavelength region of about 430nm to about 470 nm.
For example, the quantum dots may be semiconductor compounds including indium (In), zinc (Zn), and phosphorus (P), for example. For example, in the semiconductor compound, the molar ratio of zinc to indium (In) may be greater than or equal to about 25. The semiconductor compound may emit blue light having a peak emission wavelength in a wavelength region less than or equal to about 470nm, for example in a wavelength region of about 430nm to about 470 nm.
The quantum dots may have a core-shell structure in which the quantum dots of the second semiconductor compound surround or enclose the quantum dots of the first semiconductor compound. For example, the core and shell of the quantum dot may have an interface therebetween, and at least one of the elements in the interface may have a concentration gradient in which the concentration of the element decreases from the shell toward the core. For example, the semiconductor material of the shell of the quantum dot has a higher energy bandgap than the semiconductor material of the core of the quantum dot, and thus the quantum dot may exhibit a quantum confinement effect.
The quantum dot may have a quantum dot core and a multi-layer quantum dot shell surrounding the core. Here, the multi-layer shell has at least two shells, wherein each shell may be a single semiconductor compound, an alloy, and/or have a concentration gradient. For example, a shell of the multi-layer shell that is farther from the core may have a higher energy bandgap than a shell that is closer to the core, and thus the quantum dot may exhibit a quantum confinement effect.
For example, the quantum dot having a core-shell structure may include, for example: a core comprising a first semiconductor compound comprising zinc (Zn), tellurium (Te), and selenium (Se), and a shell disposed on at least a portion of the core and comprising a second semiconductor compound having a composition different from the composition of the core.
The Zn-Te-Se based first semiconductor compound may be a Zn-Se based semiconductor compound that includes a small molar amount of tellurium (Te), for example, and is represented by ZnTe xSe1-x (where x is greater than about 0 and less than or equal to about 0.05), for example.
For example, in the Zn-Te-Se based first semiconductor compound, the molar amount of zinc (Zn) may be greater than the molar amount of selenium (Se), and the molar amount of selenium (Se) may be greater than the molar amount of tellurium (Te). For example, in the first semiconductor compound, the molar ratio of tellurium (Te) relative to selenium (Se) may be less than or equal to about 0.05, less than or equal to about 0.049, less than or equal to about 0.048, less than or equal to about 0.047, less than or equal to about 0.045, less than or equal to about 0.044, less than or equal to about 0.043, less than or equal to about 0.042, less than or equal to about 0.041, less than or equal to about 0.04, less than or equal to about 0.039, less than or equal to about 0.035, less than or equal to about 0.03, less than or equal to about 0.029, less than or equal to about 0.025, less than or equal to about 0.024, less than or equal to about 0.023, less than or equal to about 0.022, less than or equal to about 0.021, less than or equal to about 0.02, less than or equal to about 0.019, less than or equal to about 0.018, less than or equal to about 0.015, less than or equal to about 0.012, less than or about 0.01, less than or equal to about 0.012. For example, in the first semiconductor compound, the molar ratio of tellurium (Te) to zinc (Zn) may be less than or equal to about 0.02, less than or equal to about 0.019, less than or equal to about 0.018, less than or equal to about 0.017, less than or equal to about 0.016, less than or equal to about 0.015, less than or equal to about 0.014, less than or equal to about 0.013, less than or equal to about 0.012, less than or equal to about 0.011, or less than or equal to about 0.01.
The second semiconductor compound may include, for example, a group II-VI semiconductor compound, a group III-V semiconductor compound, a group IV-VI semiconductor compound, a group IV semiconductor element or compound, a group I-III-VI semiconductor compound, a group I-II-IV-VI semiconductor compound, a group II-III-V semiconductor compound, or a combination thereof. Examples of the group II-VI semiconductor compound, the group III-V semiconductor compound, the group IV-VI semiconductor compound, the group IV semiconductor element or compound, the group I-III-VI semiconductor compound, the group I-II-IV-VI semiconductor compound, and the group II-III-V semiconductor compound are the same as those described above.
For example, the second semiconductor compound may include zinc (Zn), selenium (Se), and/or sulfur (S). For example, the shell may include at least one inner shell disposed proximate to the core and an outermost shell disposed furthest from the core of the quantum dot, and the inner shell may include ZnSeS and the outermost shell may include ZnS. For example, the shell may have a concentration gradient of one component, and for example the amount of sulfur (S) may increase with distance from the core.
For example, the quantum dot having a core-shell structure may include, for example, a core including a third semiconductor compound including indium (In), zinc (Zn), and phosphorus (P), and a shell disposed on at least a portion of the core and including a fourth semiconductor compound having a composition different from the core.
In the In-Zn-P based third semiconductor compound, a molar ratio of zinc (Zn) to indium (In) may be greater than or equal to about 25. For example, in the In-Zn-P based third semiconductor compound, the molar ratio of zinc (Zn) to indium (In) may be greater than or equal to about 28, greater than or equal to about 29, or greater than or equal to about 30. For example, in the In-Zn-P based third semiconductor compound, the molar ratio of zinc (Zn) to indium (In) may be less than or equal to about 55, such as less than or equal to about 50, less than or equal to about 45, less than or equal to about 40, less than or equal to about 35, less than or equal to about 34, less than or equal to about 33, or less than or equal to about 32.
The fourth semiconductor compound may include, for example, a group II-VI semiconductor compound, a group III-V semiconductor compound, a group IV-VI semiconductor compound, a group IV semiconductor element or compound, a group I-III-VI semiconductor compound, a group I-II-IV-VI semiconductor compound, a group II-III-V semiconductor compound, or a combination thereof. Examples of the group II-VI semiconductor compound, the group III-V semiconductor compound, the group IV-VI semiconductor compound, the group IV semiconductor element or compound, the group I-III-VI semiconductor compound, the group I-II-IV-VI semiconductor compound, and the group II-III-V semiconductor compound are the same as those described above.
For example, the fourth semiconductor compound may include zinc (Zn) and sulfur (S), and optionally include selenium (Se). For example, the shell may include at least one inner shell disposed proximate to the core and an outermost shell disposed furthest from the core of the quantum dot, and at least one of the inner shell and the outermost shell may include a fourth semiconductor compound ZnS or ZnSeS.
The quantum dot layer 14 may have a thickness of, for example, about 5nm to about 200nm, such as about 10nm to about 100nm, about 10nm to about 80nm, about 10nm to about 50nm, or about 25nm to about 40 nm.
The quantum dot layer 14 may have a relatively high HOMO level (HOMO QD) and may have a HOMO level (HOMO QD) of, for example, greater than or equal to about 5.4eV, greater than or equal to about 5.5eV, greater than or equal to about 5.6eV, greater than or equal to about 5.7eV, greater than or equal to about 5.8eV, greater than or equal to about 5.9eV, or greater than or equal to about 6.0 eV. The HOMO level (HOMO QD) of the quantum dot layer 14 may be, for example, about 5.4 to about 7.0, about 5.6 to about 6.8, about 5.6 to about 6.7, about 5.6 to about 6.5, about 5.6 to about 6.3, about 5.6 to about 6.2, about 5.6 to about 6.1, about 5.8 to about 7.0, about 5.8 to about 6.8, about 5.8 to about 6.7, about 5.8 to about 6.8, about 5.8 to about 6.2, about 5.8 to about 6.5, about 5.0 to about 6.0, about 6.0 to about 6.8, about 6.0 to about 6.0, about 6.8, about 6.7 to about 6.0, about 2, or about 2.
The hole injection layer 12 and the hole transport layer 13 may be disposed between the anode 11 and the quantum dot layer 14, and the hole injection layer 12 may be disposed at the anode 11 side and the hole transport layer 13 may be disposed at the quantum dot layer 14 side, so that holes supplied from the anode 11 may be transported to the quantum dot layer 14 through the hole injection layer 12 and the hole transport layer 13. For example, the hole injection layer 12 may be in contact with the anode 11 and the hole transport layer 13 may be in contact with the quantum dot layer 14.
The HOMO level (HOMO HIL) of the hole injection layer 12 may be between the work function of the anode 11 and the HOMO level of the quantum dot layer 14 and may be, for example, about 5.0eV to about 5.5eV.
The hole injection layer 12 may include a conductive compound such as a conductive metal oxide, a conductive monomer, a conductive oligomer, a conductive polymer, and/or a conductive ionic compound, such as a conductive metal oxide, a conductive monomer, a conductive oligomer, a conductive polymer, and/or a conductive ionic compound having a conductivity of greater than or equal to about 1 x 10 -7 S/cm, such as a conductive metal oxide, a conductive monomer, a conductive oligomer, a conductive polymer, and/or a conductive ionic compound having a conductivity of about 1 x 10 -7 S/cm to about 1000S/cm. The conductive compound may include, for example, polythiophene, polyaniline, polypyrrole, poly (p-benzene), polyfluorene, poly (3, 4-ethylenedioxythiophene): polysulfstyrene (PEDOT: PSS), derivatives thereof, or combinations thereof, but is not limited thereto.
The HOMO level (HOMO HTL) of the hole transport layer 13 may be between the HOMO level (HOMO HIL) of the hole injection layer 12 and the HOMO level (HOMO QD) of the quantum dot layer 14. Accordingly, a stepped energy level may be formed from the hole injection layer 12 to the quantum dot layer 14, and hole mobility may be effectively improved.
The HOMO level (HOMO HTL) of the hole transport layer 13 may have a relatively high HOMO level similar to the HOMO level of the quantum dot layer 14 to match the HOMO level (HOMO QD) of the quantum dot layer 14.
The hole transport layer 13 may include at least one hole transport material having a relatively high HOMO level. Here, the hole transport material may be a material having a conductive property along the HOMO level when an electric field is applied. The HOMO level (HOMO HTL) of the hole transport layer 13 may be determined according to the HOMO level of the hole transport material and the HOMO level (HOMO HTL) of the hole transport layer 13 is substantially equal to the HOMO level of the hole transport material.
For example, the difference between the HOMO level (HOMO QD) of the quantum dot layer 14 and the HOMO level (HOMO HTL) of the hole-transporting material of the hole-transporting layer 13 may be less than or equal to about 0.7eV, such as about 0eV to about 0.6eV, such as about 0eV to about 0.5eV, about 0.01eV to about 0.7eV, about 0.01eV to about 0.6eV, about 0.01eV to about 0.5eV, about 0.01eV to about 0.4eV, about 0.01eV to about 0.3eV, about 0.01eV to about 0.2eV, or about 0.01eV to about 0.1eV.
For example, the hole transport material of the hole transport layer 13 may have a HOMO level (HOMO HTL) equal to or less than or equal to about 0.7eV less than the HOMO level (HOMO QD) of the quantum dot layer 14.
The hole transport material of the hole transport layer 13 may have a HOMO level (HOMO HTL) of, for example, greater than or equal to about 5.4eV, greater than or equal to about 5.6eV, or greater than or equal to about 5.8eV. For example, the hole transport material of the hole transport layer 13 may have a HOMO level (HOMO HTL) of about 5.4 to about 7.0eV, about 5.4 to about 6.8eV, about 5.4 to about 6.7eV, about 5.4 to about 6.5eV, about 5.4 to about 6.3eV, about 5.4 to about 6.2eV, about 5.4 to about 6.1eV, about 5.6 to about 7.0eV, about 5.6 to about 6.8eV, about 5.6 to about 6.7eV, about 5.6 to about 6.5eV, about 5.6 to about 6.3eV, about 5.6 to about 6.2eV, about 5.6 to about 6.1eV, about 5.8 to about 7.0eV, about 5.8eV to about 6.8eV, about 5.8 to about 6.7eV, about 5.8 to about 6.8eV, about 5.8eV to about 6.8eV, about 5.6.8 eV to about 6.8eV, about 5.3 to about 6.8eV, or about 1.8.6.8 to about 6.6.8 eV.
For example, the hole transport material of the hole transport layer 13 may include a first hole transport material and a second hole transport material having different HOMO energy levels. At least one of the first hole transport material and the second hole transport material may be selected from materials satisfying the HOMO level, and for example, the second hole transport material may have a higher HOMO level than the first hole transport material. For example, the first hole transport material may have a HOMO level of less than about 5.4eV and the second hole transport material may have a HOMO level of greater than or equal to about 5.4eV. For example, the first hole transport material may have a HOMO level greater than or equal to about 4.5eV and less than about 5.4eV, and the second hole transport material may have a HOMO level from about 5.4eV to about 7.0eV. The second hole transporting material may have a HOMO level of, for example, about 5.4 to about 6.8, about 5.4 to about 6.7, about 5.4 to about 6.5, about 5.4 to about 6.3, about 5.4 to about 6.2, about 5.4 to about 6.1, about 5.6 to about 7.0, about 5.6 to about 6.8, about 5.6 to about 6.7, about 5.6 to about 6.5, about 5.6 to about 6.3, about 5.6 to about 6.2, about 5.6 to about 6.1, about 5.8 to about 7.0, about 5.8 to about 6.8, about 5.8 to about 6.7, about 5.8 to about 6.5, about 5.8 to about 6.3, about 5.8 to about 6.8, or about 1.1 to about 5.8.
The hole transport material of the hole transport layer 13 may not be particularly limited as long as the material satisfies the energy level and/or the hole mobility. The hole transport material may include, for example, a polymer selected from poly (9, 9-dioctyl-fluorene-co-N- (4-butylphenyl) -diphenylamine) (TFB), polyarylamine (polyarylamine), poly (N-vinylcarbazole), polyaniline, polypyrrole, or copolymers thereof, N '-tetrakis (4-methoxyphenyl) -benzidine (TPD), 4' -bis [ N- (1-naphthyl) -N-phenyl-amino ] biphenyl (a-NPD), 4,4',4 "-tris [ phenyl (m-tolyl) amino ] triphenylamine (m-MTDATA), 4',4" -tris (N-carbazolyl) -triphenylamine (TCTA), 1-bis [ (di-4-tolylamino) phenyl ] cyclohexane (TAPC), p-metal oxides (e.g., niO, WO 3, or MoO 3), fluorene or derivatives thereof, and carbon-based materials such as graphene oxide, but are not limited thereto.
The hole transport layer 13 may further include an electron transport material. Here, the electron transport material may be a material having a conductive property along the LUMO level when an electric field is applied. The electron transport material of the hole transport layer 13 may efficiently transport electrons passing through the quantum dot layer 14 and/or electrons accumulated at the interface between the hole transport layer 13 and the quantum dot layer 14.
In general, in a quantum dot device, mobility of holes and electrons may be different, and for example, mobility of electrons may be higher than mobility of holes. Thus, mobility imbalance may result between holes moving from anode 11 to the sub-dot layer 14 and electrons moving from cathode 16 to the sub-dot layer 14. Accordingly, relatively faster electrons may not combine with holes inside the quantum dot layer 14 and may accumulate at the interface between the quantum dot layer 14 and the hole transport layer 13. Electrons accumulated at the interface between the quantum dot layer 14 and the hole transport layer 13 may deteriorate the quantum dot device to shorten the lifetime of the quantum dot device.
In this embodiment mode, by including an electron transport material in the hole transport layer 13, electrons passing through the quantum dot layer 14 are injected into the hole injection layer 12 along the LUMO level of the hole transport layer 13, and thus electrons can be prevented from accumulating at the interface between the quantum dot layer 14 and the hole transport layer 13. As a result, deterioration of the quantum dot device can be prevented and lifetime characteristics can be improved.
The electron transport material of the hole transport layer 13 may be selected from materials having a LUMO energy level (LUMO HTL2) equal to or similar to that of the quantum dot layer 14 (LUMO QD), and for example, the difference between the LUMO energy levels of the electron transport materials of the quantum dot layer 14 and the hole transport layer 13 may be less than or equal to about 0.5eV. Within the ranges, the difference between the LUMO levels of the electron transport materials of the quantum dot layer 14 and the hole transport layer 13 may be, for example, from about 0eV to about 0.5eV, from about 0.01eV to about 0.4eV, from about 0.01eV to about 0.38eV, from about 0.01eV to about 0.35eV, or from about 0.01eV to about 0.30eV.
For example, the electron transport material of the hole transport layer 13 may have a LUMO level (LUMO HTL2) of about 2.7eV to about 3.5eV, about 2.7eV to about 3.4eV, about 2.8eV to about 3.3eV, about 2.9eV to about 3.2eV, or about 2.9eV to about 3.1eV.
The electron transport material of the hole transport layer 13 may be an organic material, an inorganic material, and/or an organic-inorganic material and may be, for example, a low molecular weight compound such as 1,4,5, 8-naphthalene-tetracarboxylic dianhydride (NTCDA), bathocuproine (BCP), tris [3- (3-pyridyl) penta ]The group ] borane (3TPYMB)、LiF、Alq3、Gaq3、Inq3、Znq2、Zn(BTZ)2、BeBq2、ET204(8-(4-(4,6- bis (naphthalen-2-yl) -1,3, 5-triazin-2-yl) phenyl) quinolone), lithium 8-hydroxyquinoline (Liq), n-metal oxides (e.g., znO, hfO 2, etc.), compounds comprising phosphine oxide moieties, compounds comprising pyrazole moieties, or combinations thereof, but are not limited thereto. As used herein, the term "low molecular weight compound" refers to a compound having a molecular weight of 10,000 grams/mole (g/mol) or less, for example 5,000g/mol or less, or 1,000g/mol or less, or 500g/mol or less.
The hole transport layer 13 may include the hole transport material and the electron transport material and may include, for example, a mixture of the hole transport material and the electron transport material. In this case, the electron transport material may be included in the same amount as or in a smaller amount than the hole transport material, and the hole transport material and the electron transport material may be included in a weight ratio of about 5:5 to about 9:1, for example.
The electron assist layer 15 may be disposed between the cathode 16 and the quantum dot layer 14 and may include one layer or two or more layers. The electron auxiliary layer 15 may be an electron transport layer, an electron injection layer, a hole blocking layer, or a combination thereof, and may be omitted as needed.
The electron transport layer may include, for example, at least one of the following: 1,4,5, 8-naphthalene-tetracarboxylic dianhydride (NTCDA), bathocuproine (BCP), tris [3- (3-pyridyl) penta ]The group ] borane (3TPYMB)、LiF、Alq3、Gaq3、Inq3、Znq2、Zn(BTZ)2、BeBq2、ET204(8-(4-(4,6- bis (naphthalen-2-yl) -1,3, 5-triazin-2-yl) phenyl) quinolone), lithium 8-hydroxyquinoline (Liq), n-metal oxides (e.g., znO, hfO 2, etc.), compounds including pyrazole moieties, phosphine oxide compounds, and combinations thereof, but are not limited thereto.
The hole blocking layer may include, for example, at least one of: 1,4,5, 8-naphthalene-tetracarboxylic dianhydride (NTCDA), bathocuproine (BCP), tris [3- (3-pyridyl) penta ]Radical ] borane (3 TPYMB), liF, alq 3、Gaq3、Inq3、Znq2、Zn(BTZ)2、BeBq2, and combinations thereof, but is not limited thereto.
The hole injection layer 12, the hole transport layer 13, the quantum dot layer 14, and the electron auxiliary layer 15 may be formed, for example, with a solution process or a deposition process and the solution process may be, for example, spin coating, slot coating, inkjet printing, nozzle printing, spraying, and/or doctor blade coating, but is not limited thereto.
The quantum dot device can be applied to various electronic devices such as a display device or a lighting device, for example.
Hereinafter, embodiments will be described in more detail with reference to examples. However, these embodiments are exemplary, and the present invention is not limited thereto.
Synthesis of quantum dots
Synthesis example 1: znTeSe Synthesis of core
Selenium (Se) and tellurium (Te) were dispersed in Trioctylphosphine (TOP) to obtain a 2M Se/TOP raw material solution and a 0.1M Te/TOP raw material solution, respectively. 0.125mmol zinc acetate, 0.25mmol palmitic acid, and 0.25mmol hexadecylamine were charged to the reactor along with 10mL trioctylamine, and then heated at 120℃under vacuum. After 1 hour, the atmosphere in the reactor was replaced with nitrogen. After heating the reactor at 300 ℃, the Se/TOP feed solution and the Te/TOP feed solution were added to them rapidly at a Te/Se molar ratio of 1/25. After 30 minutes, the reaction solution was rapidly cooled to room temperature, acetone was added thereto, and a precipitate obtained by centrifuging the mixture was dispersed in toluene to obtain a toluene dispersion of ZnTeSe quantum dots.
Synthesis example 2: synthesis of ZnTeSe core/ZnSeS shell quantum dots
1.8MmoL (0.336 g) of zinc acetate, 3.6mmol (1.134 g) of oleic acid, and 10mL of trioctylamine were charged to the flask and evacuated at 120℃for 10 minutes. The internal atmosphere of the flask was replaced with nitrogen (N 2) and the flask was heated at 180 ℃. The toluene dispersion of ZnTeSe quantum dots as cores obtained in synthesis example 1 was put into it in 10 seconds, followed by slow injection of 0.04mmol of Se/TOP, and then heating at 280 ℃. Then, 0.01mmol of S/TOP was charged thereto and heated and reacted at 320℃for 10 minutes. Subsequently, a mixed solution of 0.02mmol Se/TOP and 0.04mmol S/TOP was slowly injected and reacted again for 20 minutes. Then, the steps of injecting Se and S by changing the mixing ratio of Se and S and reacting them for 20 minutes were repeated, wherein a mixed solution of 0.01mmol Se/TOP+0.05mmol S/TOP, a mixed solution of 0.005mmol Se/TOP+0.1mmol S/TOP, and a solution of 0.5mmol S/TOP were sequentially used. After all reactions were completed, the reactor was cooled, the prepared nanocrystals were precipitated with ethanol, and the obtained nanocrystals were centrifuged with ethanol and dispersed in toluene to obtain a toluene dispersion of ZnTeSe/ZnSeS core/shell quantum dots.
Fabrication of quantum dot devices
Example 1
The glass substrate on which a 150nm thick ITO (WF: 4.8 eV) electrode was deposited was surface-treated with UV-ozone for 15 minutes, spin-coated with a PEDOT: PSS solution (H.C. Starks Co., ltd.) and heat-treated at 150℃for 10 minutes under an air atmosphere, and then heat-treated at 150℃for 10 minutes under an N 2 atmosphere to form a25 nm thick hole injection layer (HOMO: 5.3eV and LUMO:2.7 eV). Subsequently, on the hole injection layer, a25 nm thick hole transport layer was formed by: a mixture of a polymer (hole transport material) containing dioctylfluorene moieties and triphenylamine moieties (HOMO: 5.4ev, lumo:2.4 ev) and a phosphine oxide compound (electron transport material, ABH113, sun Chem) (HOMO: 6.0ev, lumo:3.0 ev) in a ratio of 1:1 (weight/weight) was spin-coated and heat-treated at 150 ℃ for 30 minutes. Then, on the hole transport layer, a 20nm thick quantum dot layer (HOMO: 6.0eV, LUMO:3.3eV, peak emission wavelength: 453 nm) was formed by: the toluene dispersion of ZnTeSe/ZnSeS core/shell quantum dots obtained in synthesis example 2 was spin coated and heat treated at 150 ℃ for 30 minutes. Then, on the quantum dot layer, a 36nm thick electron auxiliary layer was formed by vacuum deposition of a dopant including a pyrazole moiety and a phosphine oxide compound (1:3, weight/weight), and a cathode was formed thereon by vacuum deposition of Liq to 5nm and aluminum (Al) to 90nm to manufacture a quantum dot device.
Comparative example 1
A quantum dot device was fabricated according to the same method as example 1, except for the following: only the hole transport material is included in the hole transport layer instead of the mixture of the hole transport material and the electron transport material.
Example 2
The glass substrate on which a 150nm thick ITO (WF: 4.8 eV) electrode was deposited was surface-treated with UV-ozone for 15 minutes, spin-coated with a PEDOT: PSS solution (H.C. Starks Co., ltd.) and heat-treated at 150℃for 10 minutes under an air atmosphere, and then heat-treated at 150℃for 10 minutes under an N 2 atmosphere to form a 25nm thick hole injection layer (HOMO: 5.3eV and LUMO:2.7 eV). Subsequently, on the hole injection layer, a 25nm thick hole transport layer was formed by: a mixture solution comprising poly [ (9, 9-dioctylfluorene-2, 7-diyl-co- (4, 4' - (N-4-butylphenyl) diphenylamine ] (TFB) (hole transport material) (HOMO: 5.6ev, lumo:2.7 ev) and phosphine oxide compound (electron transport material, ABH113, sun Chem) (HOMO: 6.0ev, lumo:3.0 ev) in a ratio of 1:1 (weight/weight) was spin-coated and heat-treated for 30 minutes at 150 c.then, on the hole transport layer, a 25nm thick quantum dot layer (HOMO: 6.0ev, lumo:3.3ev, peak emission wavelength: 453 nm) was formed by spin-coating a toluene dispersion of ZnTeSe/ZnSeS core/shell quantum dots obtained in synthesis example 2 and heat-treating it at 150 c for 30 minutes, then, on the quantum dot layer, an auxiliary layer comprising a pyrazole portion of dopant and phosphine oxide compound (1:3 (weight/weight)) was formed thereon by vacuum deposition and an electron-assisted layer of 36nm was formed thereon to be vacuum deposited to 90 nm.
Comparative example 2
A quantum dot device was fabricated according to the same method as example 2, except for the following: only the hole transport material is included in the hole transport layer instead of the mixture of the hole transport material and the electron transport material.
Evaluation
The current-voltage-light emission characteristics of the quantum dot devices according to examples 1 and 2 and comparative examples 1 and 2 were evaluated.
The current-voltage-luminescence characteristics were evaluated by using a Keithley 220 power supply and a Minolta CS200 spectroradiometer.
The results are shown in tables 1 and 2.
TABLE 1
Example 1 Comparative example 1
Cd/m at 5mA 2 566.075 7.556
λ Maximum value 455 456
Half width (FWHM) (nm) 30 31
T95(h) 0.25 0.10
T50(h) 1.32 0.70
TABLE 2
* EQE Maximum value : maximum external quantum efficiency
* EQE 100 Nit 、EQE500 Nit 、EQE1000 Nit : external quantum efficiency at 100 nit, 500 nit, or 1000 nit
* Cd/A Maximum value : maximum current efficiency
* Cd/m 2 at 5 mA: brightness at 5mA
* Lambda Maximum value : maximum light emission wavelength
* Lum Maximum value : maximum brightness
* T95 (h): time (h) elapsed until 95% of the initial luminance at a luminance of 100%
* T50 (h): time (h) elapsed until 50% of the initial luminance at a luminance of 100%
Referring to tables 1 and 2, the quantum dot devices according to examples 1 and 2 showed significantly improved current characteristics (brightness and external quantum efficiency) and lifetime compared to the quantum dot devices according to comparative examples 1 and 2.
While the present disclosure has been described with respect to what is presently considered to be practical example embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. On the contrary, it is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.

Claims (17)

1. A quantum dot device comprising
An anode is provided with a cathode,
A hole injection layer disposed on the anode,
A hole transport layer disposed on the hole injection layer,
A quantum dot layer disposed on the hole transport layer, the quantum dot layer comprising quantum dots, and
A cathode disposed on the quantum dot layer,
Wherein the hole transport layer comprises a hole transport material and an electron transport material, and
The LUMO energy level difference between the quantum dot and the electron transporting material is less than or equal to 0.5eV.
2. The quantum dot device of claim 1, wherein the electron transporting material has a LUMO level of 2.7eV to 3.5eV.
3. The quantum dot device of claim 1, wherein the hole transport material has a HOMO level greater than or equal to 5.4eV.
4. A quantum dot device according to claim 3, wherein the hole transport material has a HOMO level of 5.4eV to 7.0eV.
5. The quantum dot device of claim 1, wherein the hole transport material comprises a polymer and the electron transport material comprises a low molecular weight compound.
6. The quantum dot device of claim 1, wherein the hole transport material comprises a first hole transport material and a second hole transport material, and
The second hole transport material has a higher HOMO level than the first hole transport material.
7. The quantum dot device of claim 6, wherein the second hole transport material has a HOMO level of 5.4eV to 7.0eV.
8. The quantum dot device of claim 1, wherein the hole transporting material and the electron transporting material are mixed.
9. The quantum dot device of claim 8, wherein the electron transport material is included in the same amount as the hole transport material or in an amount less than the hole transport material.
10. The quantum dot device of claim 1, wherein a difference between HOMO levels of the quantum dot and the hole transport material is less than or equal to 0.7eV.
11. The quantum dot device of claim 1, wherein the HOMO level of the quantum dot is greater than or equal to 5.6eV.
12. The quantum dot device of claim 1, wherein the hole transport layer and the quantum dot layer are in contact with each other.
13. The quantum dot device of claim 1, wherein the hole injection layer comprises a conductive polymer.
14. The quantum dot device of claim 1, wherein the quantum dot comprises a non-cadmium based quantum dot.
15. The quantum dot device of claim 1, wherein the quantum dot comprises:
A core comprising a first semiconductor compound comprising zinc (Zn), tellurium (Te), and selenium (Se); and
A shell disposed on at least a portion of the core and comprising a second semiconductor compound different from the first semiconductor compound.
16. The quantum dot device of claim 15, wherein the second semiconductor compound is ZnSeS, znS, or a combination thereof.
17. An electronic device comprising the quantum dot device of any one of claims 1-16.
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