CN110221499B - 低边缘场串扰的LCoS微显示器 - Google Patents
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Abstract
本发明提出低边缘场串扰的LCoS微显示器。该微显示器包括上基板、液晶层、下基板;上基板和下基板平行设置,液晶层使用正性向列相液晶材料;上基板包括偏振片、玻璃基板、透明平面公共电极;下基板包括聚合物凸起、透明方形像素电极、绝缘层、金属漫反射膜、单晶硅基片;透明公共平面电极涂覆在玻璃基板下面,透明方形像素电极为正方形,各像素电极间的间隙相等;聚合物凸起填充在透明方形像素电极间隙之间。本发明引入的特殊聚合物凸起能够有效消除LCoS的边缘场对相邻像素之间的串扰。
Description
技术领域
本发明涉及液晶显示领域,具体为低边缘场串扰的LCoS(Liquid Crystal onSilicon)微显示器。
背景技术
LCoS采用半导体CMOS(Complementary Metal Oxide Semiconductor)集成电路芯片作为反射式LCD(Liquid Crystal Display)的背基板,CMOS芯片上覆盖一层薄薄的液晶,封装并设置驱动电路后,可做成小型化反射型有源矩阵驱动的液晶器件。LCoS可将液晶器件和大规模集成电路结成一体,在制作小像素、高分辨率、高集成度成像器件时有着很大的优势。
对于传统的透射式TFT-LCD,由于门驱动芯片信号走线以及TFT(Thin FilmTransistor)本身需要占据一部分面积区域,经过这些地方的光线除了不能完全透过外,还不受电压控制,从而无法显示正确的灰阶,因此需利用黑矩阵加以遮蔽。而LCoS微显示器的驱动像素的电路和晶体管集成在单晶硅基片上,减小了光调制死区面积,从而提高了开口率。
LCoS微显示器的高集成度、高开口率等特点,导致了像素之间的影响会非常大,像素之间的边缘场会使LCoS微显示器的相位和振幅调制量的深度和精度变差,劣化器件的性能。
发明内容
本发明目的在于克服现有技术中存在的问题,提出低边缘场串扰的LCoS微显示器,该显示器中的聚合物凸起能够有效消除普通LCoS显示器中边缘场对相邻像素的串扰。
本发明是通过以下技术方案实现的:
本发明包括上基板10、液晶层4、下基板11;上基板10和下基板11平行设置,液晶层4使用正性向列相液晶材料;上基板10包括偏振片1、玻璃基板2、透明平面公共电极3;下基板11包括聚合物凸起5、透明方形像素电极6、绝缘层7、金属漫反射膜8、单晶硅基片9。
所述的液晶层4采用正性向列相液晶,在没有施加电压时,显示器呈现良好的亮态;当施加电压时,液晶分子指向矢发生变化,入射的光线在液晶层会产生双折射,入射光线的角度发生变化,部分出射光偏振方向与偏振片的偏振轴正交,显示器灰度发生变化。
所述聚合物凸起5采用低介电层材料制作,其填充在透明方形像素电极6间隙间,液晶层中的分子在聚合物凸起5的电场隔绝作用下,施加电压的像素区域内液晶分子发生了转动,在不施加电压的像素区域内液晶分子基本不受相邻像素的影响而不发生扰动。
所述透明平面公共电极3及透明方形像素电极6采用透明导电材料氧化铟锡(ITO)或氧化铟锌(IZO)制作,透明平面公共电极3涂覆在玻璃基板2下面,透明方形像素电极6为正方形,各像素电极间间隙相等。
所述绝缘层7采用氧化物制作,用于金属漫反射膜的电压屏蔽效应。所述金属漫反射膜8置于单晶硅基板9的表面,采用高反射率的金属进行制作,表面坑洼不平,用于反射入射光线。
所述单晶硅基板11是带有CMOS集成电路的单晶硅基板。
附图说明
附图1是本发明实施例提供的低边缘场串扰的LCoS微显示器的结构示意图。
附图2是本发明实施例提供的低边缘场串扰的LCoS微显示器的剖面图。
附图3为未引入凸起的LCoS微显示器的反射率图。
附图4为本发明实施例的引入特殊凸起消除相邻像素间边缘场串扰的LCoS微显示器的反射率图。
附图5为附图3和附图4虚线圈出部分的电压-反射率曲线。
上述附图中的图示标号为:
1偏振片、2玻璃基板、3透明平面公共电极、4液晶层、5聚合物凸起、6透明方形像素电极、7绝缘层、8金属漫反射膜、9单晶硅基板、10上基板、11下基板。
具体实施方式
为使本领域的技术人员能更进一步了解本发明,下面将结合附图详细地说明本发明的具体实施方式。需要说明的是,附图仅以说明为目的,并未依照原始尺寸作图。
附图1是本发明实施例提供的低边缘场串扰的LCoS微显示器的结构示意图,该微显示器包括上基板10、液晶层4、下基板11。上基板10包括偏振片1、玻璃基板2、透明平面公共电极3;下基板11包括聚合物凸起5、透明方形像素电极6、绝缘层7、金属漫反射膜8、单晶硅基片9;液晶层4采用正性向列相液晶,在没有施加电压时,设置液晶分子的方位角为90°,极角为0°,且光轴方向与上基板偏振片的夹角为0°,此时显示器呈现良好的亮态;透明平面公共电极3及透明方形像素电极6采用透明导电材料ITO制作,当驱动其中一块像素电极时,液晶分子指向矢发生变化,入射的光线在液晶层会产生双折射,入射光线的角度发生变化,部分出射光偏振方向与偏振片的偏振轴正交,显示器灰度发生变化;透明平面公共电极3涂覆在玻璃基板2下面,透明方形像素电极6为正方形,各像素电极间的间隙相等;聚合物凸起5填充在透明方形像素电极6间隙之间,当驱动其中一块像素电极时,聚合物凸起5能够消除边缘场对相邻像素的串扰;金属漫反射膜8采用金属铝制作且反射膜表面粗糙,贴在单晶硅基板9上,使得入射光线发生反射再出射液晶盒。
附图2是本发明实施例提供的低边缘场串扰的LCoS微显示器的剖面图。
设定检偏器1透光轴为90°。
本实施例中使用的液晶材料的特性参数为:正性向列相液晶的材料折射率为ne=1.741,no=1.517,介电系数ε⊥=5.3,ε‖=16.7,在波长λ=550nm时,最大双折射为0.224。
本实施例中液晶层厚度d=4μm,透明方形像素电极宽度w=7μm,间隙g=1μm,凸起高度h=1μm。
附图3为未引入凸起的LCoS微显示器的反射率图。横纵坐标分别表示单个像素的长和宽。由附图3可知,当驱动正中间一块像素电极时,其相邻的像素亮度会受到影响,如虚线圈出的部分所示。这说明驱动像素电极与其相邻的非驱动像素电极之间有横向电场产生,主要是液晶分子方位角的扰动对微显示器的光学成像质量产生了不良影响。
附图4为本发明实施例的引入特殊凸起消除相邻像素间边缘场串扰的LCoS微显示器的反射率图。由附图4可知,相对附图3,当驱动正中间的像素电极时,其相邻像素电极上方的亮暗度几乎没有受到影响,如虚线圈出部分所示,这说明聚合物凸起5能够有效抑制被驱动像素电极相邻像素电极上方的液晶分子发生偏转,从而消除相邻像素间的串扰。
附图5为附图3和附图4虚线圈出部分的电压-反射率曲线。当未施加电压时(即附图5中的0Vrms),引入凸起的LCoS微显示器反射率较低,这是因为由于凸起的存在,其附近的液晶分子在摩擦取向后仍然无法水平排列。由附图5可知,当驱动其中一块像素电极时,对于未引入凸起的LCoS微显示器结构,其相邻像素的反射率随电压的改变产生了变化,这说明了被驱动像素电极对相邻像素产生了较强的干扰;对于引入凸起的LCoS微显示器结构,其相邻像素的反射率随电压的改变几乎没有变化,这说明了被驱动像素电极对其相邻像素几乎没有干扰,引入的聚合物凸起5能够有效消除相邻像素间的串扰。
以上所述仅为本发明的优选实施例,但本发明不限于此实施例。本领域的普通技术人员应当理解,在不脱离由权利要求书限定的本发明的精神实质和范围的情况下对其形式和细节做出的各种改变,皆应属本发明的范围内。
Claims (2)
1.低边缘场串扰的LCoS微显示器,其特征为,该微显示器包括上基板、液晶层、下基板;上基板和下基板平行设置,液晶层使用正性向列相液晶材料;上基板包括偏振片、玻璃基板、透明平面公共电极;下基板包括聚合物凸起、透明方形像素电极、绝缘层、金属漫反射膜、单晶硅基板;所述聚合物凸起为低介电层聚合物,所述透明方形像素电极采用透明导电材料ITO/IZO制作,聚合物凸起填充在透明方形像素电极间隙之间;聚合物凸起采用的低介电层材料是为了消除驱动像素电极与其相邻的非驱动像素电极之间的横向电场,从而使得不施加电压像素区域内的液晶分子不受相邻像素施加电压的影响而不发生方位角的扰动,达到了消除边缘场对相邻像素的串扰;所述金属漫反射膜采用金属铝制作,所述单晶硅基板是带有CMOS集成电路的单晶硅基板,金属漫反射膜贴在单晶硅基板上。
2.如权利要求1所述的低边缘场串扰的LCoS微显示器,其特征为,所述透明平面公共电极涂覆在玻璃基板下面,透明方形像素电极为正方形,各像素电极间的间隙相等。
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