CN110220945A - The gamut temperature-compensation method of semiconductor gas sensor - Google Patents
The gamut temperature-compensation method of semiconductor gas sensor Download PDFInfo
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- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
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- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
- G01N27/16—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by burning or catalytic oxidation of surrounding material to be tested, e.g. of gas
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Abstract
The invention discloses the gamut temperature-compensation methods of semiconductor gas sensor, belong to gas sensor detection technique field, and solving existing semiconductor gas sensor cannot act as the defect of gas concentration output.Gamut temperature-compensation method of the invention includes the following steps: S1, obtains the resistance value of current environmental temperature and semiconductor-type gas sensor in currently used environment, determines current normalization coefficient with the calibration resistance value of the semiconductor-type gas sensor；S2, in the temperature compensation data library pre-established search with current environmental temperature similar in up and down two temperature values, using linear interpolation method generate current environmental temperature under the conditions of normalization coefficient and the gas concentration table of comparisons；S3, searched in the step S2 normalization coefficient generated and the gas concentration table of comparisons with two gas concentrations up and down similar in current normalization coefficient in step S1, the gas concentration under the conditions of obtaining current environmental temperature is calculated using linear interpolation method.
Description
[technical field]
The present invention relates to gas sensor detection technique field more particularly to the gamut temperature of semiconductor gas sensor
Compensation method.
[background technique]
Semiconductor gas sensor is to be contacted using gas with semiconductor gas sensor, and aoxidize in semiconductor surface
Reduction reaction, made of the mechanism for leading to semiconductor gas sensor change in resistance, people detect the ingredient of specific gas with this
Or measurement gas concentration.Semiconductor-type gas sensor is different from catalytic combustion type sensor, resistance value and gas concentration
Not instead of linear relationship, as the trend that negative power index reduces is presented in the increase of gas concentration, so that in high gas concentration area
Resistance value varies less, it is difficult to accurately distinguish.Meanwhile resistance value also suffers from the influence of environment temperature, so can not only lead to
The resistance value for crossing measurement semiconductor gas sensor directly obtains gas concentration.Therefore, often make as Threshold Alerts in industry
With, will not be used as gas concentration export.
A kind of humiture compensation method of compensation gas sensor known in the art, is being mended according to actual measured value
It repays coefficient inquiry data base querying and obtains corresponding penalty coefficient, then obtain gas concentration true value by calculating.This compensation
Method first has to obtain gas concentration, temperature, the actual measured value of humidity, but due to the resistance value and gas of semiconductor gas sensor
Bulk concentration is not linear relationship, and this method is not suitable for semiconductor-type gas sensor, and actually establishes the work of database
It measures too greatly, required hardware cost is excessively high, realizes that difficulty is big.
In view of advantage of the semiconductor gas sensor in terms of cost and service life, this field is desirable to find a kind of suitable
For the concentration output method of semiconductor gas sensor, to widen the application range of semiconductor gas sensor.
[summary of the invention]
A kind of semi-conductor gas biography is provided technical problem to be solved by the present invention lies in overcome the deficiencies in the prior art
The gamut temperature-compensation method of sensor makes semiconductor gas sensor can be applied to gas concentration output occasion.
In order to solve the above technical problems, the present invention adopts the following technical scheme:
The gamut temperature-compensation method of semiconductor gas sensor, it is characterised in that include the following steps:
S1, the resistance value of current environmental temperature and semiconductor-type gas sensor in currently used environment is obtained, with this
The calibration resistance value of semiconductor-type gas sensor determines current normalization coefficient；
S2, it is searched in the temperature compensation data library pre-established and upper and lower two temperature similar in current environmental temperature
Value generates normalization coefficient and the gas concentration table of comparisons under the conditions of current environmental temperature using linear interpolation method；
S3, it is searched and normalizing current in step S1 in the step S2 normalization coefficient generated and the gas concentration table of comparisons
Two gas concentrations up and down for changing coefficient similar calculate the gas under the conditions of obtaining current environmental temperature using linear interpolation method
Concentration；
Wherein, the temperature compensation data library is based under condition of different temperatures, gas with various concentration and normalization coefficient
The database that corresponding relationship is established.
In the gamut temperature-compensation method of above-mentioned semiconductor gas sensor, the calibration resistance value is semiconductor-type gas
Body sensor is 20 DEG C~35 DEG C in temperature, and gas concentration is the standard shape of semiconductor gas sensor full scale 30%~70%
The resistance value measured under state.
In the gamut temperature-compensation method of above-mentioned semiconductor gas sensor, the foundation in the temperature compensation data library
Include the following steps:
S01, resistance value when semiconductor-type gas sensor corresponds to gas with various concentration under the conditions of normal temperature is obtained, respectively
Resistance value is normalized with the calibration resistance value of semiconductor-type gas sensor respectively, obtains corresponding with gas with various concentration
Normalization coefficient establishes normalization coefficient and the gas concentration table of comparisons under normal temperature；
S02, step S01 is repeated, obtains other different temperatures, the resistance value of different semiconductor gas sensors and calibration resistance value
Corresponding normalization coefficient establishes temperature compensation data library.
In the gamut temperature-compensation method of above-mentioned semiconductor gas sensor, in step S01, normalization coefficient is
The average value of n semiconductor-type gas sensor normalization coefficient.
In the gamut temperature-compensation method of above-mentioned semiconductor gas sensor, in step S01, the different gas
Bulk concentration be respectively semiconductor gas sensor full scale 0%, 10%, 20%, 30%, 40%, 50%, 60%, 70%,
80%, 90%, 100%.
In the gamut temperature-compensation method of above-mentioned semiconductor gas sensor, in step S02, temperature-compensating is established
The temperature range of database is -10 DEG C~55 DEG C.
Beneficial effects of the present invention:
Firstly, temperature compensation data library is based on different temperatures in gamut temperature-compensation method proposed by the present invention
Under the conditions of, the database of gas with various concentration and the foundation of normalization coefficient corresponding relationship, and establish such database and only need
The resistance value of semiconductor-type gas sensor at different temperatures is obtained, does not have complicated intersection corresponding relationship in database,
The model structure of database is more simple, and reduce database establishes difficulty and the requirement to amount of physical memory；Secondly,
Normalized method is all used during the foundation of database and actually detected data comparison, reduces semiconductor gas sensor
Individual initial resistance value difference bring error, the method for enhancing the applicability of the compensation method, while also using linear interpolation
The normalization coefficient and the gas concentration table of comparisons under the conditions of current environmental temperature are constructed, and under the conditions of solution current environmental temperature
Gas concentration so that calculated gas concentration value is more nearly true value, error is smaller.
Generally speaking, proposition of the invention, so that the semiconductor gas sensor for being only suitable for doing Threshold Alerts originally has
Gamut concentration output function.
These features and advantages of the invention will the detailed exposure in following specific embodiment, attached drawing.
[Detailed description of the invention]
Following further describes the present invention with reference to the drawings:
Fig. 1 is the flow chart of gamut temperature-compensation method in the embodiment of the present invention；
Fig. 2 is the flow chart that temperature compensation data library is established in the embodiment of the present invention.
Fig. 3 is the schematic diagram of resistance measuring circuit in the embodiment of the present invention；
Fig. 4 is the schematic diagram of temperature measuring circuit in the embodiment of the present invention.
[specific embodiment]
The technical solution of the embodiment of the present invention is explained and illustrated below with reference to the attached drawing of the embodiment of the present invention, but under
It states embodiment to be merely a preferred embodiment of the present invention, and not all.Based on the implementation example in the implementation mode, those skilled in the art
Obtained other embodiments without making creative work, belong to protection scope of the present invention.
In order to better illustrate the disclosure, numerous details is given in specific embodiment below.Ability
Field technique personnel should be appreciated that no certain details, the disclosure equally can be implemented.In some embodiments, for this
Method known to the technical staff of field, means, element and circuit are not described in detail, in order to highlight purport of the invention.
Referring to Fig.1, the gamut temperature-compensation method of the semiconductor gas sensor proposed in the embodiment of the present invention, it is special
Sign is to include the following steps:
S1, the resistance value of current environmental temperature and semiconductor-type gas sensor in currently used environment is obtained, with this
The calibration resistance value of semiconductor-type gas sensor determines current normalization coefficient；
S2, it is searched in the temperature compensation data library pre-established and upper and lower two temperature similar in current environmental temperature
Value generates normalization coefficient and the gas concentration table of comparisons under the conditions of current environmental temperature using linear interpolation method；
S3, it is searched and normalizing current in step S1 in the step S2 normalization coefficient generated and the gas concentration table of comparisons
Two gas concentrations up and down for changing coefficient similar calculate the gas under the conditions of obtaining current environmental temperature using linear interpolation method
Concentration.
Semiconductor-type gas sensor described in the embodiment of the present invention has resistance measuring circuit and temperature measuring circuit,
Referring to Fig. 3, resistance measuring circuit includes adding thermal resistance RE and thermistor R1, and heating voltage VH is used to supply to adding thermal resistance RE
Electricity, measurement voltage VT are used to power to thermistor R1, and sensitive resistance R1 is that resistance value changes with gas concentration and changes variable
Resistance, resistance R2 are high precision collecting resistance, by the voltage VR2 at acquisition resistance R2, can calculate the resistance of thermistor R1
Value.
Referring to Fig. 4, temperature measuring circuit includes temperature sensor RT and resistance R3, and temperature sensor RT is resistance value with temperature
The variable resistance of variation and variation, resistance R3 are high precision collecting resistance, and VCC is the supply voltage of temperature sensor RT, are passed through
The voltage VR3 at resistance R3 is acquired, the resistance value of temperature sensor RT can be calculated.
Referring to Fig. 2, temperature compensation data library described in the embodiment of the present invention is based under condition of different temperatures, gas with various
The database that concentration and normalization coefficient corresponding relationship are established, can inquire under condition of different temperatures, no from the database
With normalization coefficient corresponding to gas concentration, specific method for building up includes the following steps:
S01, resistance value when semiconductor-type gas sensor corresponds to gas with various concentration under the conditions of normal temperature is obtained, respectively
Resistance value is normalized with the calibration resistance value of semiconductor-type gas sensor respectively, obtains corresponding with gas with various concentration
Normalization coefficient establishes normalization coefficient and the gas concentration table of comparisons under normal temperature；
S02, step S01 is repeated, obtains other different temperatures, the resistance value of different semiconductor gas sensors and calibration resistance value
Corresponding normalization coefficient establishes temperature compensation data library.
In step S01, normalization coefficient is the average value of n semiconductor gas sensor normalization coefficient, such as
Under normal temperature (A DEG C), measurement n (n can be the natural numbers such as 5,8,10) a semiconductor-type gas sensor is in gas concentration point
It Wei not 0% full scale, 10% full scale, 20% full scale, 30% full scale, 40% full scale, 50% full scale, 60% full amount
Resistance value when journey, 70% full scale, 80% full scale, 90% full scale, 100% full scale, each resistance value respectively with semiconductor-type
The calibration resistance value of gas sensor is normalized, and obtains normalization coefficient corresponding with above-mentioned gas with various concentration, with
Normalization coefficient average value of this n semiconductor gas sensor under same gas concentration is as the gas concentration in standard temperature
Corresponding normalization coefficient under degree, as shown in table 1 below:
It should be understood that A DEG C of above-mentioned standard temperature is the arbitrary value in 20 DEG C~35 DEG C, calibration resistance value is semiconductor-type
For gas sensor under normal temperature, gas concentration is under the standard state of semiconductor gas sensor full scale 30%~70%
The resistance value measured, can choose normal temperature according to the actual situation is 20 DEG C, 23 DEG C, 27 DEG C, 30 DEG C, 35 DEG C etc., gas concentration
It can choose 30% full scale, 40% full scale, 60% full scale, 70% full scale etc..
In step S02, repeat step S01, obtain other different temperatures, the resistance value of different semiconductor gas sensor with
It demarcates the corresponding normalization coefficient of resistance value, establishes temperature compensation data library, i.e., as shown in table 2 below:
In step S02, the temperature range for establishing temperature compensation data library is -10 DEG C~55 DEG C, in table 2 as above, n half
Conductor gas sensor under the conditions of -10 DEG C, 0 DEG C, 10 DEG C, 20 DEG C, 25 DEG C, 35 DEG C, 45 DEG C, 55 DEG C of temperature, corresponds to not respectively
Resistance value detection is carried out with gas concentration, the normalization coefficient in table 2 is obtained by normalized.
Gamut temperature-compensation method of the invention is illustrated with specific example below:
S1, to measure current environmental temperature be 33 DEG C, and resistance value of the semiconductor-type gas sensor in currently used environment be
The calibration resistance value of actually measured resistance value with the semiconductor-type gas sensor is divided by, obtains current normalization by 2.09K Ω
Coefficient is 0.8394；
S2, in above-mentioned table 2 search with 33 DEG C of current environmental temperature similar in up and down two temperature values, i.e., 25 DEG C and 35
DEG C, normalization coefficient and the gas concentration table of comparisons under the conditions of generating 33 DEG C using linear interpolation method, specific calculation formula
It is as follows:
Wherein, Y25℃Each normalization coefficient under the conditions of being 25 DEG C in above-mentioned table 2, Y35℃Under the conditions of 35 DEG C in above-mentioned table 2
Each normalization coefficient, normalization coefficient and the gas concentration table of comparisons, i.e. the following table 3 under the conditions of thus generating 33 DEG C:
S3, it is searched in above-mentioned table 3 and upper and lower two gases similar in normalization coefficient 0.8394 current in step S1
Concentration, i.e. 60% full scale and 70% full scale, use linear interpolation method calculate obtain 33 DEG C under the conditions of gas concentration for
62.7% full scale, specific calculation formula are as follows:
Wherein, Y60% full scaleCorresponding normalization coefficient, Y when for gas concentration in table 3 being 60% full scale70% full scaleFor
Corresponding normalization coefficient when gas concentration is 70% full scale in table 3.
The gamut temperature-compensation method according to embodiments of the present invention, temperature compensation data library are based on different temperatures
Under the conditions of, the database of gas with various concentration and the foundation of normalization coefficient corresponding relationship, and establish such database and only need
The resistance value of semiconductor-type gas sensor at different temperatures is obtained, does not have complicated intersection corresponding relationship in database,
The model structure of database is more simple, and reduce database establishes difficulty and the requirement to amount of physical memory；Secondly,
Normalized method is all used during the foundation of database and actually detected data comparison, reduces semiconductor gas sensor
Individual initial resistance value difference bring error, the method for enhancing the applicability of the compensation method, while also using linear interpolation
The normalization coefficient and the gas concentration table of comparisons under the conditions of current environmental temperature are constructed, and under the conditions of solution current environmental temperature
Gas concentration so that calculated gas concentration value is more nearly true value, error is smaller.
Using scheme described in the embodiment of the present invention, so that being only suitable for doing the semiconductor gas sensor tool of Threshold Alerts originally
There is gamut concentration output function, semiconductor gas sensor is made to can be applied to gas concentration output occasion.
The above description is merely a specific embodiment, but scope of protection of the present invention is not limited thereto, is familiar with
The those skilled in the art should be understood that the present invention includes but is not limited to attached drawing and interior described in specific embodiment above
Hold.Any modification without departing from function and structure principle of the invention is intended to be included in the range of claims.
Claims (6)
1. the gamut temperature-compensation method of semiconductor gas sensor, it is characterised in that include the following steps:
S1, the resistance value of current environmental temperature and semiconductor-type gas sensor in currently used environment is obtained, is partly led with this
The calibration resistance value of body formula gas sensor determines current normalization coefficient；
S2, lookup and upper and lower two temperature values similar in current environmental temperature in the temperature compensation data library pre-established, are adopted
The normalization coefficient and the gas concentration table of comparisons under the conditions of current environmental temperature are generated with linear interpolation method；
S3, it is searched and normalization system current in step S1 in the step S2 normalization coefficient generated and the gas concentration table of comparisons
It is dense to calculate the gas under the conditions of obtaining current environmental temperature using linear interpolation method for similar two gas concentrations up and down of number
Degree；
Wherein, the temperature compensation data library is based under condition of different temperatures, and gas with various concentration is corresponding with normalization coefficient
The database that relationship is established.
2. the gamut temperature-compensation method of semiconductor gas sensor as described in claim 1, which is characterized in that the calibration
It in temperature is 20 DEG C~35 DEG C that resistance value, which is semiconductor-type gas sensor, and gas concentration is semiconductor gas sensor full scale
The resistance value measured under 30%~70% standard state.
3. the gamut temperature-compensation method of semiconductor gas sensor as described in claim 1, which is characterized in that the temperature
The foundation of compensation database includes the following steps:
S01, resistance value when semiconductor-type gas sensor corresponds to gas with various concentration under the conditions of normal temperature, each resistance value are obtained
It is normalized respectively with the calibration resistance value of semiconductor-type gas sensor, obtains normalizing corresponding with gas with various concentration
Change coefficient, establishes normalization coefficient and the gas concentration table of comparisons under normal temperature；
S02, step S01 is repeated, it is corresponding with calibration resistance value obtains other different temperatures, the resistance value of different semiconductor gas sensors
Normalization coefficient, establish temperature compensation data library.
4. the gamut temperature-compensation method of semiconductor gas sensor as claimed in claim 3, which is characterized in that in step
In S01, normalization coefficient is the average value of n semiconductor-type gas sensor normalization coefficient.
5. the gamut temperature-compensation method of semiconductor gas sensor as claimed in claim 3, which is characterized in that in step
In S01, the gas with various concentration be respectively semiconductor gas sensor full scale 0%, 10%, 20%, 30%,
40%, 50%, 60%, 70%, 80%, 90%, 100%.
6. the gamut temperature-compensation method of semiconductor gas sensor as claimed in claim 3, which is characterized in that in step
In S02, the temperature range for establishing temperature compensation data library is -10 DEG C~55 DEG C.
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Cited By (4)
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| CN113008943A (en) * | 2019-12-20 | 2021-06-22 | 财团法人工业技术研究院 | Gas sensing device and gas concentration sensing method |
| CN113917076A (en) * | 2021-09-15 | 2022-01-11 | 四川希尔得科技有限公司 | Organic solvent gas concentration detection method |
| CN114216938A (en) * | 2022-02-23 | 2022-03-22 | 浙江正泰仪器仪表有限责任公司 | Gas concentration detection compensation method and device |
| CN114720536A (en) * | 2022-04-22 | 2022-07-08 | 河南省保时安电子科技有限公司 | Mining toxic and harmful gas concentration detection method based on single-point calibration fitting algorithm |
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| CN114720536A (en) * | 2022-04-22 | 2022-07-08 | 河南省保时安电子科技有限公司 | Mining toxic and harmful gas concentration detection method based on single-point calibration fitting algorithm |
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