Detailed Description
The present invention is further illustrated by the following examples, which should not be construed as limiting the scope of the invention.
Example 1
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.05: 2.68: 694.
example 2
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.08: 2.68: 694.
example 3
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.10: 2.68: 694.
example 4
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.13: 2.68: 694.
example 5
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.15: 2.68: 694.
example 6
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.17: 2.68: 694.
example 7
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.18: 2.68: 694.
example 8
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.20: 2.68: 694.
as can be seen from fig. 1, with the gradual increase of the addition amount of N-dehydroabietyl-N, N-dimethyl-N-hydroxyethylammonium bromide, the samples of examples 1 and 2 had low or no order due to too low or too high concentration of the templating agent, and the peaks of the diffraction peaks of the other samples tended to increase first and then decrease in intensity, which was in the order of the ultramicropore structure. When the material ratio of ethyl orthosilicate to N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is 1: at 0.17, the sample has the highest degree of order, and exhibits diffraction peaks of cubic phase 211, 220, 420, and 322 crystal planes at 2 θ of 3.00 °, 3.46 °, 5.50 °, and 5.72 ° (d211 of 2.94nm, d220 of 2.55nm, d420 of 1.61nm, and d332 of 1.54), respectively (fig. 1, example 6), indicating that the sample has a highly ordered cubic ultramicropore structure.
Example 9
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.17: 0.27: 694.
example 10
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.17: 0.54: 694.
example 11
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.17: 0.80: 694.
example 12
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.17: 1.07: 694.
example 13
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.17: 1.34: 694.
example 14
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.17: 1.61: 694.
example 15
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.17: 1.87: 694.
example 16
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.17: 2.15: 694.
example 17
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.17: 2.41: 694.
example 18
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.17: 3.21: 694.
example 19
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 100 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.17: 3.76: 694.
as can be seen from fig. 2, as the amount of methylamine added gradually increases, in examples 9, 18 and 19, the samples are disordered or layered due to too low or too high concentration of methylamine, and the sharpness of the diffraction peak shape and the peak intensity of other samples tend to increase first and then decrease, which means that the samples are in an ordered ultramicropore structure. When the material ratio of ethyl orthosilicate to methylamine is 1:2.41, the sample has the highest degree of order, and the sample has diffraction peaks of crystal planes 211, 220, 420 and 332 in cubic phases at 2 θ ═ 3.14 °, 3.62 °, 5.66 ° and 5.96 ° (d211 ═ 2.81nm, d220 ═ 2.44nm, d420 ═ 1.56nm and d332 ═ 1.48), respectively (fig. 2, example 17), which indicates that the sample has a highly ordered cubic ultramicropore structure. Example 16 shows the highly ordered cubic ultramicropore structure of this sample, as shown in fig. 2, example 16, in which cubic phase 211, 220, 420 and 322 crystal plane diffraction peaks respectively appear at 2 θ of 3.02 °, 3.46 °, 5.50 ° and 5.74 ° (d211 of 2.92 nm, d220 of 2.55nm, d420 of 1.61nm and d332 of 1.54). The pore size is about 1.5 nm. The N2 adsorption-desorption characteristics of example 16 are shown in FIGS. 4 and 5, the pore diameter of the material is intensively distributed at 1.5nm, the material is a typical ultramicropore material, the BET specific surface area of the material is 1911m2/g, and the pore volume is 0.71m 3/g. The N2 adsorption-desorption characteristics of example 17 are shown in FIGS. 6 and 7, the pore diameter of the material is intensively distributed at 1.5nm, the material is a typical ultramicropore material, the BET specific surface area of the material is 1399m2/g, and the pore volume is 0.54m 3/g. The transmission electron microscopy characterization of example 17 is shown in fig. 8, with the sample showing a well-ordered channel structure in the parallel channel direction.
Example 20
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at the temperature of 80 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.17: 2.68: 694.
example 21
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at 120 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.17: 2.68: 694.
example 22
Dissolving N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide in deionized water at 35 ℃, adding a methylamine solution, dropwise adding ethyl orthosilicate under the condition of stirring after the N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide is completely dissolved, standing, moving into a hydrothermal reaction kettle, standing and crystallizing at 140 ℃ for 2-48 h, after crystallization is completed, carrying out suction filtration, washing, drying to obtain ultra-microporous silicon dioxide precursor powder, and heating the ultra-microporous silicon dioxide precursor to 823K at the rate of 1K/min and calcining for 4 h. Wherein the material ratio of ethyl orthosilicate, N-dehydroabietyl-N, N-dimethyl-N-hydroxyethyl ammonium bromide, methylamine and water is 1.0: 0.17: 2.68: 694.
as can be seen from fig. 3, as the crystallization temperature increases, the samples of examples 20, 21 and 22 have disordered or lamellar phases due to too low or too high temperature, and the peaks of the diffraction peaks of other samples tend to increase in sharpness and decrease in peak intensity, and thus have an ordered ultramicropore structure. When the crystallization temperature is 100 ℃, the sample shows diffraction peaks of 211, 220, 420 and 322 crystal planes of cubic phase at 2 theta 3.00 degrees, 3.46 degrees, 5.50 degrees and 5.72 degrees (d211 is 2.94nm, d220 is 2.55nm, d420 is 1.61nm, and d332 is 1.54), respectively (fig. 3, example 6), which shows that the sample has a highly ordered cubic ultramicropore structure.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.