CN110190010B - Semiconductor wafer dicing apparatus and dicing method - Google Patents
Semiconductor wafer dicing apparatus and dicing method Download PDFInfo
- Publication number
- CN110190010B CN110190010B CN201910412105.0A CN201910412105A CN110190010B CN 110190010 B CN110190010 B CN 110190010B CN 201910412105 A CN201910412105 A CN 201910412105A CN 110190010 B CN110190010 B CN 110190010B
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- wafer
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- scribing
- dicing
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims description 30
- 230000000903 blocking effect Effects 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims description 17
- 238000000926 separation method Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 4
- 238000003384 imaging method Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 73
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Laser Beam Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The invention provides a semiconductor wafer dicing device, which comprises a laser and a wafer die; the wafer mold includes a dicing mask, a wafer, and a wafer carrier for carrying a semiconductor wafer, which are sequentially arranged in a laser incident direction; the scribing mask comprises a scribing area which can transmit laser and a blocking area which blocks the laser; the scribing region and the blocking region form a mask pattern; the mask pattern includes a predicted division shape of the semiconductor wafer; when dividing the wafer, the laser of the laser passes through the scribing area of the scribing mask and cuts the wafer on the wafer carrier according to the mask pattern; the invention can improve the efficiency of the dicing operation of the semiconductor wafer.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a semiconductor wafer dicing device and a dicing method.
Background
The fabrication of semiconductors such as LEDs (LIGHT EMITTING Diode) includes a process of separating individual chips (die) and packaging after forming a plurality of elements at once in a wafer. The former is called front-end process (frond-end process), and the latter is called back-end process (back-end process). It can be said that the front-end process of forming a plurality of devices on a wafer has a large influence on the quality of semiconductor devices, but the importance of the back-end process is not inferior to the former.
In the back-end process, the process of separating the wafer into a plurality of elements (die) is called dicing, which includes dicing and breaking or cutting by laser scribing lines on the wafer surface.
Dicing is a process of irradiating laser light along so-called "streets" existing between individual elements to scribe lines in advance like scratches. In a conventional dicing apparatus, after a CCD (charge coupled device) is used to match positions, laser light is first irradiated in the Y direction. Then, the wafer is rotated, and laser light is irradiated in the X direction.
As described above, the conventional apparatus for dicing sequentially in the Y direction and the X direction has a process of rotating the wafer, and thus the process time is long. In addition, data required for the process should be created and stored separately for different types of wafers.
Disclosure of Invention
The invention provides a semiconductor wafer dicing device and a dicing method, which can improve the efficiency of semiconductor wafer dicing operation.
The invention adopts the following technical scheme.
A semiconductor wafer dicing apparatus, the dicing apparatus (10) comprising a laser (15) and a wafer die; the wafer mold includes a dicing mask (13), a wafer, and a wafer carrier (11) for carrying a semiconductor wafer, which are sequentially arranged in a laser light incident direction; the scribe mask includes a scribe region (133) that is permeable to laser light and a blocking region (131) that blocks the laser light; the scribing region and the blocking region form a mask pattern; the mask pattern includes a predicted division shape of the semiconductor wafer; when dividing the wafer, the laser of the laser passes through the scribing area of the scribing mask, and cuts the wafer on the wafer carrier according to the mask pattern.
The blocking area blocks laser light of the laser by using frequency doubling materials.
The wafer carrier is movable to align the semiconductor wafers carried thereby with the mask patterns of the dicing mask.
The dicing apparatus further includes an imaging system for aligning preset anchor points on the wafer with pattern anchor points of the mask pattern.
The two side ends of the scribing mask are supported by mask supporting parts (14); the frequency doubling material is a material capable of preventing laser from transmitting or a material capable of changing the laser frequency.
The scribe mask may be manufactured by a method of forming a layer of frequency doubling material for blocking regions on a glass plate (132).
The dicing method of the semiconductor wafer comprises the following steps of;
a1, fixing a wafer at a wafer carrier, and moving the wafer carrier to align a semiconductor wafer with a mask pattern of a dicing mask;
A2, observing the wafer die by using an image system, and adjusting the wafer carrier to enable the mark shape of a preset mark point on the wafer to coincide with the mark shape of a corresponding positioning point at the mask pattern so as to realize accurate positioning, thereby enabling the scribing region of the mask pattern to be aligned with a preset element separation region at the wafer;
a3, irradiating the scribing mask by using laser of a laser;
A4, laser passing through a scribing region of the scribing mask is incident on an element separation region of the semiconductor wafer, a scribing is formed at the region, and a scribing line with the same shape as the scribing region is formed on the semiconductor wafer;
and A5, moving an irradiation area of the laser to enable the laser to completely scan the scribing mask, enabling all mask patterns of the scribing mask to be irradiated by the laser, and completing semiconductor cutting.
In step A5, the moving direction of the irradiated area of the laser at the dicing mask includes an X-axis direction and a Y-axis direction.
The moving track of the irradiation area is Z-shaped or spiral, and the position of the semiconductor wafer at the wafer bearing frame is always fixed in the scanning irradiation process of the laser on the scribing mask.
The present invention provides a scribing apparatus and method capable of rapidly scribing a semiconductor wafer, forming a blocking region capable of protecting an element region from laser in a mask pattern with a frequency doubling material, so that laser irradiation can be performed in a scanning manner; therefore, after the wafer and the dicing mask are aligned, the wafer posture is not required to be changed, the laser irradiation is rapidly performed on the whole upper surface of the wafer, the wafer dicing is completed, and the wafer dicing efficiency is greatly improved.
Drawings
The invention is described in further detail below with reference to the attached drawings and detailed description:
FIG. 1 is a schematic illustration of the present invention;
FIG. 2 is a schematic illustration of a dicing mask;
FIG. 3 is another schematic view of a dicing mask;
FIG. 4 is a schematic diagram of a comparison of alignment of a lithographic point on a wafer with a pattern anchor point of a mask pattern;
FIG. 5 is a schematic view of the movement trajectory of the irradiated area during laser scanning;
FIG. 6 is a schematic view of another movement trajectory of an irradiated area during laser scanning;
In the figure: 10-dicing device; 11-wafer carrier; 13-dicing masking; 14-mask support; 15-a laser; 131-blocking region; 132—a glass plate; 133-scribe area;
100-wafer; 101-corresponding anchor points at the mask pattern; 102-defined mark points on the wafer.
Detailed Description
As shown in fig. 1-6, a semiconductor wafer dicing apparatus 10 includes a laser 15 and a wafer die; the wafer mold includes a dicing mask 13, a wafer 100, and a wafer carrier 11 for carrying a semiconductor wafer, which are sequentially arranged in a laser light incident direction; the dicing mask includes a scribing region 133 that is permeable to laser light and a blocking region 131 that blocks the laser light; the scribing region and the blocking region form a mask pattern; the mask pattern includes a predicted division shape of the semiconductor wafer; when dividing the wafer, the laser of the laser passes through the scribing area of the scribing mask, and cuts the wafer on the wafer carrier according to the mask pattern.
The blocking area blocks laser light of the laser by using frequency doubling materials.
The wafer carrier is movable to align the semiconductor wafers carried thereby with the mask patterns of the dicing mask.
The dicing apparatus further includes an imaging system for aligning preset anchor points on the wafer with pattern anchor points of the mask pattern.
The two side ends of the dicing mask are supported by mask supporting portions 14; the frequency doubling material is a material capable of preventing laser from transmitting or a material capable of changing the laser frequency.
The dicing mask may be manufactured by a method of forming a frequency doubling material layer for blocking regions on the glass plate 132.
The dicing method of the semiconductor wafer comprises the following steps of;
a1, fixing a wafer at a wafer carrier, and moving the wafer carrier to align a semiconductor wafer with a mask pattern of a dicing mask;
A2, observing the wafer die by using an image system, and adjusting the wafer carrier to enable the mark shape of a set mark point 102 on the wafer to coincide with the mark shape of a corresponding positioning point 101 at the position of the mask pattern so as to realize accurate positioning, thereby enabling a scribing region of the mask pattern to be aligned with a preset element separation region at the position of the wafer;
a3, irradiating the scribing mask by using laser of a laser;
A4, laser passing through a scribing region of the scribing mask is incident on an element separation region of the semiconductor wafer, a scribing is formed at the region, and a scribing line with the same shape as the scribing region is formed on the semiconductor wafer;
and A5, moving an irradiation area of the laser to enable the laser to completely scan the scribing mask, enabling all mask patterns of the scribing mask to be irradiated by the laser, and completing semiconductor cutting.
In step A5, the moving direction of the irradiated area of the laser at the dicing mask includes an X-axis direction and a Y-axis direction.
The moving track of the irradiation area is Z-shaped or spiral, and the position of the semiconductor wafer at the wafer bearing frame is always fixed in the scanning irradiation process of the laser on the scribing mask.
In this example, a given mark point on a semiconductor wafer may select a lithographic point at the wafer.
Claims (5)
1. The semiconductor wafer dicing device is characterized in that: the dicing apparatus (10) includes a laser (15) and a wafer die; the wafer mold includes a dicing mask (13), a wafer, and a wafer carrier (11) for carrying a semiconductor wafer, which are sequentially arranged in a laser light incident direction; the scribe mask includes a scribe region (133) that is permeable to laser light and a blocking region (131) that blocks the laser light; the scribing region and the blocking region form a mask pattern; the mask pattern includes a predicted division shape of the semiconductor wafer; when dividing the wafer, the laser of the laser passes through the scribing area of the scribing mask and cuts the wafer on the wafer carrier according to the mask pattern;
the blocking area is used for blocking laser of the laser by using a frequency doubling material;
the wafer carrier is movable to align the semiconductor wafer carried by the wafer carrier with the mask pattern of the dicing mask;
the scribing device further comprises an imaging system, wherein the imaging system is used for enabling preset positioning points on the wafer to be aligned with pattern positioning points of the mask pattern;
The two side ends of the scribing mask are supported by mask supporting parts (14); the frequency doubling material is a material capable of preventing laser from transmitting or a material capable of changing laser frequency;
the dicing apparatus forming a blocking region in a frequency doubling material that can protect an element region from laser in a mask pattern, performing laser irradiation in a scanning manner; after aligning the wafer and the dicing mask, laser irradiation is rapidly performed on the entire upper surface of the wafer without changing the wafer posture to complete wafer dicing, thereby improving wafer dicing efficiency.
2. The semiconductor wafer dicing apparatus according to claim 1, wherein: the scribe mask may be manufactured by a method of forming a layer of frequency doubling material for blocking regions on a glass plate (132).
3. The semiconductor wafer dicing method is characterized in that: the dicing apparatus of claim 1, wherein the dividing method comprises the steps of;
a1, fixing a wafer at a wafer carrier, and moving the wafer carrier to align a semiconductor wafer with a mask pattern of a dicing mask;
A2, observing the wafer die by using an image system, and adjusting the wafer carrier to enable the mark shape of a preset mark point on the wafer to coincide with the mark shape of a corresponding positioning point at the mask pattern so as to realize accurate positioning, thereby enabling the scribing region of the mask pattern to be aligned with a preset element separation region at the wafer;
a3, irradiating the scribing mask by using laser of a laser;
A4, laser passing through a scribing region of the scribing mask is incident on an element separation region of the semiconductor wafer, a scribing is formed at the region, and a scribing line with the same shape as the scribing region is formed on the semiconductor wafer;
and A5, moving an irradiation area of the laser to enable the laser to completely scan the scribing mask, enabling all mask patterns of the scribing mask to be irradiated by the laser, and completing semiconductor cutting.
4. A semiconductor wafer dicing method according to claim 3, characterized in that: in step A5, the moving direction of the irradiated area of the laser at the dicing mask includes an X-axis direction and a Y-axis direction.
5. The semiconductor wafer dicing method according to claim 4, wherein: the moving track of the irradiation area is Z-shaped or spiral, and the position of the semiconductor wafer at the wafer bearing frame is always fixed in the scanning irradiation process of the laser on the scribing mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910412105.0A CN110190010B (en) | 2019-05-17 | 2019-05-17 | Semiconductor wafer dicing apparatus and dicing method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910412105.0A CN110190010B (en) | 2019-05-17 | 2019-05-17 | Semiconductor wafer dicing apparatus and dicing method |
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| Publication Number | Publication Date |
|---|---|
| CN110190010A CN110190010A (en) | 2019-08-30 |
| CN110190010B true CN110190010B (en) | 2024-04-23 |
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| CN201910412105.0A Active CN110190010B (en) | 2019-05-17 | 2019-05-17 | Semiconductor wafer dicing apparatus and dicing method |
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| Country | Link |
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5550622A (en) * | 1978-10-11 | 1980-04-12 | Toshiba Corp | Semiconductor wafer |
| KR19980016823A (en) * | 1996-08-29 | 1998-06-05 | 김광호 | Mask with dummy pattern for crack prevention |
| KR19980043616A (en) * | 1996-12-04 | 1998-09-05 | 김영환 | Photomask |
| KR19980082607A (en) * | 1997-05-08 | 1998-12-05 | 김영환 | Manufacturing method of semiconductor device |
| KR20020002652A (en) * | 2000-06-30 | 2002-01-10 | 박종섭 | Method for manufacturing mask in semiconductor device |
| CN102456625A (en) * | 2010-10-26 | 2012-05-16 | 苏州天弘激光股份有限公司 | Laser cutting manufacturing method of special-shaped wafer |
| CN103703546A (en) * | 2011-06-15 | 2014-04-02 | 应用材料公司 | Wafer dicing using hybrid galvanic laser scribing process with plasma etch |
| WO2015017097A1 (en) * | 2013-07-31 | 2015-02-05 | Applied Materials, Inc. | A method and system for laser focus plane determination in laser scribing process |
| CN105234560A (en) * | 2015-09-30 | 2016-01-13 | 厦门市三安光电科技有限公司 | Cutting method for semiconductor chips |
| CN105458517A (en) * | 2015-12-08 | 2016-04-06 | 深圳英诺激光科技有限公司 | Wafer laser scribing and fission method and system |
| CN108780778A (en) * | 2016-03-25 | 2018-11-09 | 应用材料公司 | Use rotary light beam laser scribing process and the hybrid method for cutting chip of plasma etch process |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6969635B2 (en) * | 2000-12-07 | 2005-11-29 | Reflectivity, Inc. | Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates |
-
2019
- 2019-05-17 CN CN201910412105.0A patent/CN110190010B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5550622A (en) * | 1978-10-11 | 1980-04-12 | Toshiba Corp | Semiconductor wafer |
| KR19980016823A (en) * | 1996-08-29 | 1998-06-05 | 김광호 | Mask with dummy pattern for crack prevention |
| KR19980043616A (en) * | 1996-12-04 | 1998-09-05 | 김영환 | Photomask |
| KR19980082607A (en) * | 1997-05-08 | 1998-12-05 | 김영환 | Manufacturing method of semiconductor device |
| KR20020002652A (en) * | 2000-06-30 | 2002-01-10 | 박종섭 | Method for manufacturing mask in semiconductor device |
| CN102456625A (en) * | 2010-10-26 | 2012-05-16 | 苏州天弘激光股份有限公司 | Laser cutting manufacturing method of special-shaped wafer |
| CN103703546A (en) * | 2011-06-15 | 2014-04-02 | 应用材料公司 | Wafer dicing using hybrid galvanic laser scribing process with plasma etch |
| WO2015017097A1 (en) * | 2013-07-31 | 2015-02-05 | Applied Materials, Inc. | A method and system for laser focus plane determination in laser scribing process |
| CN105234560A (en) * | 2015-09-30 | 2016-01-13 | 厦门市三安光电科技有限公司 | Cutting method for semiconductor chips |
| CN105458517A (en) * | 2015-12-08 | 2016-04-06 | 深圳英诺激光科技有限公司 | Wafer laser scribing and fission method and system |
| CN108780778A (en) * | 2016-03-25 | 2018-11-09 | 应用材料公司 | Use rotary light beam laser scribing process and the hybrid method for cutting chip of plasma etch process |
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| Publication number | Publication date |
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| CN110190010A (en) | 2019-08-30 |
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