CN110143579A - A kind of preparation method of nanocrystal - Google Patents
A kind of preparation method of nanocrystal Download PDFInfo
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- CN110143579A CN110143579A CN201910450937.1A CN201910450937A CN110143579A CN 110143579 A CN110143579 A CN 110143579A CN 201910450937 A CN201910450937 A CN 201910450937A CN 110143579 A CN110143579 A CN 110143579A
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/08—Other phosphides
- C01B25/082—Other phosphides of boron, aluminium, gallium or indium
- C01B25/087—Other phosphides of boron, aluminium, gallium or indium of gallium or indium
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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Abstract
The present invention discloses a kind of preparation method of nanocrystal, and the preparation method comprises the following steps: 1), by first precursor substance dissolution in organic solvent, metal ion needed for first precursor substance contains synthesizing nanocrystalline body；2), it is warming up to the first temperature, the second precursor substance is added into the organic solvent containing the first precursor substance, nonmetallic ion needed for second precursor substance contains synthesizing nanocrystalline body makes the first precursor substance and the second precursor substance contact with each other and the chemical reaction generation more non-uniform nanocrystal of partial size occurs.The present invention convenient for storage, and is easier to scale of mass production by the relatively simple lower quantum dot of method processability.When need to use, then by the more non-uniform nanocrystal of the partial size the more uniform quantum dot of the higher partial size of performance is prepared.
Description
This case is entitled a kind of preparation method of nanocrystal application No. is 201610828099.3, the applying date
For on 09 19th, 2016 divisional applications.
This case require earlier application (application No. is 201610075952.9, a kind of entitled preparation of nanocrystal
Method, the applying date are on February 03rd, 2016) whole domestic priority.
Technical field
The present invention relates to a kind of preparation methods of nanocrystal.
Background technique
Quantum dot, also known as nanocrystalline or nanocrystal are the sizes with several nanometers, are usually 1-20 nanometers of model
Enclose material interior and with crystal structure.Quantum dot can issue fluorescence under light source appropriate or voltage excitation.Quantum dot due to
Its special characteristic, such as the optical characteristics of size adjustable, high-quantum efficiency, relatively narrow half-peak breadth and anti-light degradability, in mistake
It has been extensively studied in 20 years gone.
In the prior art, the preparation of quantum dot is usually present following problems, and the lower method performance of preparation cost is poor, produces
The preparation cost of the higher preparation method of moral character energy is too high.For example, the preparation of indium phosphide quantum dot generally comprises three kinds of methods: 1)
Under high temperature, organic alkylphosphines make phosphorus source and obtain indium phosphide quantum dot in fatty acid indium precursors reaction, and the method preparation process is numerous
It is trivial, expensive starting materials, higher cost；2) under high temperature, phosphine gas directly reacts to obtain indium phosphide quantum dot with fatty acid indium, this
Method needs to be passed through toxic gas, and complicated for operation dangerous and uncontrollable, the poor cost of properties of product is also high；3) elemental phosphorous to make phosphorus
Source reacts to obtain indium phosphide quantum dot with fatty acid indium, and the method is although easy to operate, but security risk is high.
In addition, to also result in quantum dot large-scale production relatively difficult for the above problem of quantum dot preparation.
Therefore, it is necessary to be further improved to quantum dot preparation method.
Summary of the invention
The technical problems to be solved by the invention are as follows: a kind of preparation method of nanocrystal is provided, can be improved nanocrystalline
The performance of body.
The present invention provides a kind of preparation methods of nanocrystal, and the preparation method comprises the following steps: by partial size compared with
It is added in the organic solvent dissolved with electron-donating group compound with predetermined temperature for non-uniform nanocrystal, generates partial size
More uniform nanocrystal, the predetermined temperature described in the organic solvent can make the ionic bond of the nanocrystal disconnected
It splits.
Preferably, the nanocrystal particle size range is 1-10nm.
Preferably, the nanocrystal is V A race nanocrystal of the IIIth A-, selected from one of following compound: phosphatization
Indium, indium arsenide, gallium nitride, gallium phosphide, GaAs, gallium antimonide, aluminium nitride, aluminum phosphate, aluminium arsenide, aluminium antimonide, indium nitride, antimony
Indium, nitrogen gallium phosphide, nitrogen GaAs, nitrogen gallium antimonide, phosphorus gallium antimonide, gallium arsenide phosphide, nitrogen aluminum phosphate, nitrogen aluminium arsenide, nitrogen phosphatization gallium aluminium,
Nitrogen aluminium antimonide gallium, phosphorus aluminium antimonide gallium, phosphorus aluminum gallium arsenide, nitrogen InGaP, nitrogen InGaAsP, nitrogen indium antimonide gallium, phosphorus indium antimonide gallium,
Phosphorus InGaAsP, indium nitride aluminium, indium phosphide aluminium, indium arsenide aluminium, indium antimonide aluminium.
Preferably, the nanocrystal is indium phosphide, and the predetermined temperature is 220 DEG C -260 DEG C.
Preferably, the predetermined temperature is 240 DEG C -250 DEG C.
Preferably, in the organic solvent include Doped ions, the Doped ions be selected from zinc ion, magnesium ion, calcium from
At least one of son, aluminium ion.
Preferably, the organic solvent is long chain alkane, long-chain olefin, long-chain alcohol, long-chain amine, long-chain ester, long-chain fat
At least one of acid, long chain mercaptans.
Preferably, the long chain alkane includes at least one of following substance: including 1- octadecane, 1- heptadecane, 1-
Hexadecane, 1- dodecane, the 1- tetradecane, 1- tridecane, 1- pristane, 1- phytane, 1- pentadecane, paraffin, 1- eicosane, 1- bis-
Octadecane, 1- lignocerane；The long-chain olefin includes at least one of following substance: 1- octadecene, 1- dodecylene,
Cetene, tetradecene, 1- heptadecene, 19 carbene of 1-, 1- eicosylene, 1- tridecylene, 1- pentadecane alkene；
The chain alkyl amine includes at least one of following substance: hexadecylamine, octadecylamine, tetradecylamine, decane
Base amine, lauryl amine, undecyl amine, tridecyl amine, 1,12- diamino dodecane, 1,18- diamino octadecane, 1,
16- diamino hexadecane, 1,14- diamino tetradecylamine, oleyl amine；The long chain alkanol includes at least one in following substance
Kind: 1- octadecanol, 1- hexadecanol, 1- eicosanol, DODECANOL, 1-, 1- tridecanol, 1- tetradecanol, 1- 22
Alkanol, 1- pentadecanol, 1- heptadecanol, 1- nonadecanol, 1- eicosanol；The long-chain alkyl groups include in following substance
At least one: stearyl, acetic acid dodecyl ester, acetic acid cetyl ester, acetic acid eicosane base ester, pentadecane base ester,
Heptadecane base ester；The chain alkyl fatty acid includes at least one of following substance: capric acid, hendecanoic acid, dodecanoic acid,
Tridecanoic acid, tetradecanoic acid, pentadecanoic acid, hexadecanoic acid, Heptadecanoic acide, stearic acid, arachic acid；The chain alkyl mercaptan
Including at least one of following substance: 1- undecane thiol, 1- dodecyl mercaptans, 1- tetradecane mercaptan, 1- pentadecane mercaptan,
1- hexadecanethiol, 1- octadecanethiol.
Preferably, the electron-donating group compound includes trialkyl phosphine, trialkyl phosphine, alkylamine, enamine, alkyl sulfide
At least one of alcohol, aryl mercaptan, alkylaryl mercaptan, fatty acid.
Preferably, the alkylamine includes monosubstituted alkylamine, disubstituted alkylamine, at least one in three substituted alkylamines
Kind, the fatty acid includes at least one of tetradecylic acid, oleic acid, stearic acid.
Preferably, after being added to the more non-uniform nanocrystal of partial size in the organic solvent with predetermined temperature,
The temperature of the organic solvent is maintained near the predetermined temperature -1 hour 1 second.
Preferably, the more non-uniform nanocrystal of partial size is being added in the organic solvent with predetermined temperature and is being protected
After holding a period of time, precursor substance needed for the shell of synthesizing nanocrystalline body is added is kept for a period of time cool down.
Preferably, precursor substance needed for the shell is zinc sulphide precursor.
Preferably, the more non-uniform nanocrystal of the partial size by following steps be made: 1) atmosphere of inert gases or
The first precursor substance is dissolved in the organic solvent under person's vacuum condition, first precursor substance contains to be received described in synthesis
Metal ion needed for meter Jing Ti；2) it is warming up to the first temperature, the second precursor substance, second precursor substance are added thereto
Containing nonmetallic ion needed for synthesizing the nanocrystal, keep first precursor substance and second precursor substance mutual
Contact occurs chemical reaction and generates the more non-uniform nanocrystal of partial size.
The invention has the following advantages: preparation method of the invention, step is simple, easy to operate, and cost is relatively low；Pass through
The nanocrystal that preparation method of the invention obtains, partial size is more uniform, and half-peak breadth is relatively narrow.Through the invention, quantum dot can be with
By the relatively simple lower quantum dot of method processability, and it is easier to scale of mass production.It is needing to take in actual use
A part of lower quantum dot of performance, can quickly and easily be prepared by means of the present invention the higher partial size of performance compared with
For uniform quantum dot.
Detailed description of the invention
Fig. 1 is the absorption spectrum and launching light spectrogram of indium phosphide quantum dot prepared by the embodiment of the present invention 1.
Specific embodiment
Below in conjunction with embodiment of the present invention, technical solution in the embodiment of the present invention is described in detail, and is shown
So, described embodiment is only some embodiments of the invention, rather than whole embodiments.Based in the present invention
Embodiment, those of ordinary skill in the art's every other implementation obtained without making creative work
Mode belongs to the scope of the present invention.
The invention discloses a kind of preparation methods of nanocrystal, comprising the following steps: receives partial size is more non-uniform
Meter Jing Ti is added rapidly to have in the organic solvent dissolved with electron-donating group compound of predetermined temperature, and it is more equal to generate partial size
Even nanocrystal, predetermined temperature can be such that the ionic bond of the nanocrystal is broken in organic solvent.
Predetermined temperature is a temperature range, and the ionic bond of the nanocrystal in organic solvent can be made to be broken, but not
Nanocrystal can be made all to be decomposed into ion moment is added, the inoculation of nanocrystal is allowed to grow.Different nanocrystals pair
Answer different predetermined temperatures.
The present invention promotes part nanometer by allowing the more non-uniform nanocrystal instantaneous touch high temperature organic solvent of partial size
The ionic bond of crystal is broken, and generates the ion of composition nanocrystal.Wherein the smallest a part of nanocrystal of partial size is in moment height
The ion of composition nanocrystal is completely decomposed under temperature, partial size larger portion nanocrystal under instantaneous high-temperature only divide by part
Solution is the ion of composition nanocrystal.Since the solubility of inorganic metal ion compound in organic solvent is very small, thus
The ion of these newly generated nanocrystals will cause the supersaturation of the ion in organic solvent, and be intended to not break also in ionic bond
The nanocrystal surface deposition growing split, to make the whole narrow particle size distribution of nanocrystal.
The fracture of nanocrystal ionic bond generates corresponding cation and anion has entered first since outermost layer
In machine solution.In heterogeneous organic system of the invention, the fracture of the ionic bond of nanocrystal is a dynamic process.When
The tendency for forming ion deposition growing on nanocrystal of nanocrystal is greater than nanocrystal ionic bond under the predetermined temperature and breaks
When the tendency split, generally nanocrystal is in growth conditions.
The more non-uniform nanocrystal source of partial size includes two ways in the present invention, and one is purchase acquisition, secondly
To prepare.
In one preferred embodiment, preparation method of the invention is more non-uniform nanocrystalline including preparing partial size
The step of body, specific as follows: 1) in organic solvent by the dissolution of the first precursor substance, the first precursor substance contains synthesizing nanocrystalline
Metal ion needed for body；2) it is warming up to the first temperature, the second precursor substance is added thereto, the second precursor substance contains synthesis
Nonmetallic ion needed for nanocrystal makes the first precursor substance and the second precursor substance contact with each other and chemical reaction generation occurs
The more non-uniform nanocrystal of partial size.For better nanocrystal can be obtained, it is preferable that in the organic solvent of step 1) also
Dissolved with another metal ion species, for activating the metal ion in the first precursor substance or filling up produced nanocrystal
Defect.
In one preferred embodiment, nanocrystal particle size range of the invention is in 1-10nm.
In one preferred embodiment, nanocrystal of the invention is V A race nanocrystal of the IIIth A-.Preferably,
Nanocrystal is selected from one of following compound: indium phosphide, indium arsenide, gallium nitride, gallium phosphide, GaAs, gallium antimonide, nitridation
Aluminium, aluminum phosphate, aluminium arsenide, aluminium antimonide, indium nitride, indium antimonide, nitrogen gallium phosphide, nitrogen GaAs, nitrogen gallium antimonide, phosphorus gallium antimonide, phosphorus
GaAs, nitrogen aluminum phosphate, nitrogen aluminium arsenide, nitrogen phosphatization gallium aluminium, nitrogen aluminium antimonide gallium, phosphorus aluminium antimonide gallium, phosphorus aluminum gallium arsenide, nitrogen indium phosphide
Gallium, nitrogen InGaAsP, nitrogen indium antimonide gallium, phosphorus indium antimonide gallium, phosphorus InGaAsP, indium nitride aluminium, indium phosphide aluminium, indium arsenide aluminium, antimony
Change indium aluminium.
In one preferred embodiment, nanocrystal is indium phosphide, and predetermined temperature is 220 DEG C -260 DEG C.More preferably
Ground, nanocrystal are indium phosphide, and predetermined temperature is 240 DEG C -250 DEG C.
In a preferred embodiment, Doped ions are dissolved in organic solvent.Doped ions can not only play activation
Effect, the defect of nanocrystal can also be filled up.Doped ions in zinc ion, magnesium ion, calcium ion, aluminium ion extremely
Few one kind.In a preferred embodiment, the nanocrystal prepared by the present invention includes doped chemical, and doped chemical includes zinc
At least one of element, magnesium elements, calcium constituent, aluminium element.
Organic solvent of the invention be long chain alkane, long-chain olefin, long-chain alcohol, long-chain amine, long-chain ester, long chain fatty acids,
At least one of long chain mercaptans.Preferably, long chain alkane include 1- octadecane, 1- heptadecane, 1- hexadecane, 1- dodecane,
The 1- tetradecane, 1- tridecane, 1- pristane, 1- phytane, 1- pentadecane, paraffin, 1- eicosane, 1- octacosane, 1- 24
At least one of alkane；Long-chain olefin includes 1- octadecene, 1- dodecylene, cetene, tetradecene, 1- 17
At least one of carbene, 19 carbene of 1-, 1- eicosylene, 1- tridecylene, 1- pentadecane alkene；Chain alkyl amine includes ten
Six alkylamines, octadecylamine, tetradecylamine, decyl amine, lauryl amine, undecyl amine, tridecyl amine, 1,
12- diamino dodecane, 1,18- diamino octadecane, 1,16- diamino hexadecane, 1,14- diamino tetradecylamine, oleyl amine
At least one of；Long chain alkanol includes 1- octadecanol, 1- hexadecanol, 1- eicosanol, DODECANOL, 1-, 1- tridecane
Alcohol, 1- tetradecanol, 1- tadenan, 1- pentadecanol, 1- heptadecanol, 1- nonadecanol, in 1- eicosanol extremely
Few one kind；Long-chain alkyl groups include stearyl, acetic acid dodecyl ester, acetic acid cetyl ester, acetic acid eicosane base ester, ten
At least one of five Arrcostabs, heptadecane base ester；Chain alkyl fatty acid includes capric acid, hendecanoic acid, dodecanoic acid, 13
At least one of alkanoic acid, tetradecanoic acid, pentadecanoic acid, hexadecanoic acid, Heptadecanoic acide, stearic acid, arachic acid；Chain alkyl
Mercaptan includes 1- undecane thiol, 1- dodecyl mercaptans, 1- tetradecane mercaptan, 1- pentadecane mercaptan, 1- hexadecanethiol, 1- ten
At least one of eight alkanethiols.
Electron-donating group compound of the invention include trialkyl phosphine, trialkyl phosphine, alkylamine, enamine, alkyl hydrosulfide,
At least one of aryl mercaptan, alkylaryl mercaptan, fatty acid.Preferably, alkylamine include monosubstituted alkylamine, it is disubstituted
At least one of alkylamine, three substituted alkylamines, fatty acid include at least one of tetradecylic acid, oleic acid, stearic acid.
In a preferred embodiment, organic solvent of the invention is the mixing for including chain alkyl acid and octadecylene
Liquid.In another preferred embodiment, organic solvent of the invention be include chain alkyl acid, chain alkyl amine and octadecylene
Mixed liquor.
In a preferred embodiment, it is added to by the more non-uniform nanocrystal of partial size with predetermined temperature
After in organic solvent, the temperature of organic solvent is maintained near predetermined temperature -1 hour 1 second.Pass through the difference of retention time
It can control the particle size of prepared nanocrystal.
In a preferred embodiment, preparation method of the invention includes: by the more non-uniform nanocrystal of partial size
It is added rapidly to be kept for a period of time after having in the organic solvent dissolved with electron-donating group compound of predetermined temperature, to gained
Product in be added synthesis shell needed for precursor substance, and be maintained at predetermined temperature nearby a period of time, then cool down.This implementation
What mode obtained is the nanocrystal of core-shell structure.The shell of nanocrystal is also semiconductor material, it is preferable that half included by shell
Conductor material includes II/VI compounds of group or III/V compounds of group, it is highly preferred that semiconductor material included by shell include 2 to
20 II/VI compounds of group or the single layer of III/V compounds of group.In a specific embodiment, zinc sulphide shell need to be synthesized,
Zinc sulphide precursor substance is then added.Zinc sulphide precursor substance includes zinc precursor, sulphur precursor or the substance comprising sulphur and Zn-ef ficiency.
If having there is zinc precursor in original organic solvent, sulphur precursor need to only be added.
In a preferred embodiment, preparation method of the invention includes: by the more non-uniform nanocrystal of partial size
It is added rapidly to have in the organic solvent dissolved with electron-donating group compound of predetermined temperature, and is maintained near predetermined temperature
For a period of time, then cool down, resulting product is the means such as extracted to, be centrifuged and isolates and purifies.By finally obtained centrifugation
Precipitated product is dissolved in nonpolar solvent, nanocrystal solution as after purification.Extraction organic solvent used include but
It is not limited to one or more of n-hexane, methanol, ethyl alcohol.
In one preferred embodiment, nanocrystal is indium phosphide, and predetermined temperature is 220 DEG C -260 DEG C.Specifically,
Preparation method includes: that 1) indium precursor and zinc precursor are dissolved in the organic solvent containing chain alkyl acid, phosphide element and zinc member
The molar ratio range of element is 1:0-1:5；2) it vacuumizes, is heated to 100 DEG C -140 DEG C, further deoxygenation 1h under vacuum conditions,
Obtain indium precursor solution；3) indium precursor solution is warming up to 150 DEG C -200 DEG C, is passed through phosphine gas thereto, until color
Become it is light yellow to brown when, stopping is passed through gas, obtains the more non-uniform indium phosphide nano crystalloid solution of partial size；4) it prepares
The molar ratio of mixed solution containing zinc ion and chain alkyl acid, zinc ion and chain alkyl acid is 1:1-1:2.5, and is added
Heat is to 220 DEG C -260 DEG C of predetermined temperature；5) the more non-uniform indium phosphide nano crystalloid solution of above-mentioned partial size is injected into rapidly
With in 220 DEG C -260 DEG C of predetermined temperature of mixed solutions, and it is maintained at a period of time between 220 DEG C -260 DEG C, then cooled down,
Obtain the more uniform indium phosphide nano crystalloid solution of partial size；6) extraction and centrifugation for passing through nonpolar solvent, separate pure
Change.
After being added rapidly to the more non-uniform nanocrystal of partial size that there is the mixed solution of predetermined temperature, partial size compared with
Small indium phosphide nano crystal decomposes rapidly, and in conjunction with the biggish indium phosphide nano crystal of partial size, eventually forms bigger partial size
Uniform particle sizes indium phosphide nano crystal.It is nanocrystalline by heat preservation a period of time after the nanocrystal of uniform particle sizes is formed
The partial size of body gradually becomes more uniform, and the defect on surface gradually decreases, the last phosphatization stable to uniform particle sizes' performance
Nanocrystal In body.Zinc ion facilitates the activation of indium ion and reduces the defect of nanocrystal surface.
In the embodiment of above-mentioned indium phosphide nanocrystallite preparation, predetermined temperature is preferably 240 DEG C -250 DEG C, is had
Solvent is preferably octadecylene.It further include long-chain amine in the mixed solution of step 4) in a preferred specific embodiment.
In the embodiment of above-mentioned indium phosphide nanocrystallite preparation, pass through rate-determining steps 3) in be passed through phosphatization hydrogen
The time of body can have an impact final nanocrystal partial size.It, can be rough by the color change to solution in step 3)
Judge the particle size of nanocrystal.With increasing for phosphine gas is passed through, being passed through the time becomes larger, the color of indium precursor solution
Become pale yellow to brown.The pale yellow nanocrystal partial size that represents is smaller, and it is larger that brown represents nanocrystal partial size.
In the present invention, by controlling retention time, the also partial size of adjustable nanocrystal.Temperature range during holding
The partial size of the as range of predetermined temperature, nanocrystal increases with the increase of retention time.
Embodiment 1
It prepares the indium phosphide nano crystal of uniform particle sizes: 1) mixing indium acetate and zinc acetate and stearic acid, octadecylamine,
The molar ratio of middle indium acetate and zinc acetate is 1:2, is added in a small amount of octadecylene solvent and stirs evenly, and forms mixture；2) will
Mixture is heated to 120 DEG C under vacuum conditions, and deoxygenation 1h obtains the precursor mixed solution of indium acetate and zinc acetate；3) will
Mixed solution is warming up to 180 DEG C, is passed through phosphine gas thereto, until mixed solution becomes light yellow, stopping is passed through gas, obtains
To the more non-uniform indium phosphide nanocrystallite dispersion liquid of partial size；It 4) is that 1:1 zinc acetate and chain alkyl acid are added by molar ratio
It into a certain amount of octadecylene, stirs evenly, and is warming up to 245 DEG C, obtain the organic solution of predetermined temperature；5) it is obtained above-mentioned
The more non-uniform indium phosphide nanocrystallite dispersion liquid of partial size be added in above-mentioned 245 DEG C of organic solution, and keep the temperature 5 seconds
Then clock cools down；6) dispersion liquid after cooling is added in the mixed solution of n-hexane and ethyl alcohol, high speed centrifugation obtains
Centrifugation n-hexane dissolution adds methanol, forms suspension, is centrifuged at a high speed again, centrifugation is dissolved in just
In hexane, the more uniform indium phosphide nano crystal of partial size after purification is obtained.
Embodiment 2
Prepare the indium phosphide nano crystal of the zinc sulphide cladding of uniform particle sizes: same as Example 1, different is,
Step 5) are as follows: in the organic solution that the more non-uniform indium phosphide nanocrystallite dispersion liquid of partial size is added to 245 DEG C, heat preservation
5 seconds, the sulphur source being dissolved in octadecylene is added dropwise thereto, continues to keep the temperature 5min, then cool down.
Embodiment 3
Prepare the indium phosphide nano crystal of the zinc sulphide cladding of uniform particle sizes: same as Example 1, different is,
Step 5) are as follows: in the organic solution that the more non-uniform indium phosphide nanocrystallite dispersion liquid of partial size is added to 245 DEG C, heat preservation
20 seconds, the sulphur source being dissolved in octadecylene is added dropwise thereto, continues heat preservation 20 seconds, then cools down.
Embodiment 4
Prepare the indium phosphide nano crystal of uniform particle sizes: same as Example 1, different is, step 3) are as follows: will mix
It closes solution and is warming up to 180 DEG C, be passed through phosphine gas thereto, until mixed solution becomes brown, stopping is passed through gas, obtains grain
The more non-uniform indium phosphide nanocrystallite dispersion liquid of diameter.
The nanocrystal explanation prepared by embodiment 1-4, can preparation method through the invention, simple and quick preparation
Nanocrystal.Since the non-uniform nanocrystal of partial size not high to Particle size requirements, required can be a large amount of by easy method
It obtains, and saves conveniently.In the partial size more uniform nanocrystal for needing to prepare high quality, progress can be directly taken
Preparation, the method for transformation from the more non-uniform nanocrystal of partial size to the more uniform nanocrystal of partial size is very simple, can
To substantially reduce preparation cost.
Fig. 1 is the absorption spectrum and emission spectrum of the quantum dot of the embodiment of the present invention 1.As seen from the figure, prepared by the present invention
The half-peak breadth of nanocrystal is relatively narrow, illustrates that the partial size of nanocrystal is more uniform.
To sum up, the present invention provides a kind of preparation methods of new nanocrystal, not only simple to operation, but also obtain
The more uniform nanocrystal of partial size.
Although inventor has done more detailed elaboration to technical solution of the present invention and has enumerated, it should be understood that for
For those skilled in the art, above-described embodiment is modified and/or the flexible or equivalent alternative solution of use is obvious
, cannot all be detached from the essence of spirit of that invention, the term occurred in the present invention be used for elaboration to technical solution of the present invention and
Understand, can not be construed as limiting the invention.
Claims (10)
1. a kind of preparation method of nanocrystal, which is characterized in that the preparation method comprises the following steps:
1), in organic solvent by the dissolution of the first precursor substance, first precursor substance contains needed for synthesizing nanocrystalline body
Metal ion；
2) it, is warming up to the first temperature, is added the second precursor substance in the organic solvent of the first precursor substance of Xiang Hanyou, described second
Nonmetallic ion needed for precursor substance contains synthesizing nanocrystalline body makes the first precursor substance contact with each other with the second precursor substance
Chemical reaction occurs and generates the more non-uniform nanocrystal of partial size.
2. preparation method according to claim 1, which is characterized in that the preparation method is further comprising the steps of:
By the more non-uniform nanocrystal of partial size be added to predetermined temperature dissolved with the organic molten of electron-donating group compound
In agent, the more uniform nanocrystal of partial size is generated, the predetermined temperature described in the organic solvent can make described nanocrystalline
The ionic bond of body is broken.
3. preparation method according to claim 1, it is characterised in that: the nanocrystal is that V A race of the IIIth A- is nanocrystalline
Body, selected from one of following compound: indium phosphide, indium arsenide, gallium nitride, gallium phosphide, GaAs, gallium antimonide, aluminium nitride, phosphorus
Change aluminium, aluminium arsenide, aluminium antimonide, indium nitride, indium antimonide, nitrogen gallium phosphide, nitrogen GaAs, nitrogen gallium antimonide, phosphorus gallium antimonide, phosphorus arsenic
Gallium, nitrogen aluminum phosphate, nitrogen aluminium arsenide, nitrogen phosphatization gallium aluminium, nitrogen aluminium antimonide gallium, phosphorus aluminium antimonide gallium, phosphorus aluminum gallium arsenide, nitrogen InGaP,
Nitrogen InGaAsP, nitrogen indium antimonide gallium, phosphorus indium antimonide gallium, phosphorus InGaAsP, indium nitride aluminium, indium phosphide aluminium, indium arsenide aluminium, indium antimonide
Aluminium.
4. preparation method according to claim 2, it is characterised in that: the nanocrystal is indium phosphide, the predetermined temperature
Degree is 220 DEG C -260 DEG C.
5. preparation method according to claim 1, it is characterised in that: it include Doped ions in the organic solvent, it is described
Doped ions are selected from least one of zinc ion, magnesium ion, calcium ion, aluminium ion.
6. preparation method according to claim 1, it is characterised in that: the organic solvent be long chain alkane, long-chain olefin,
At least one of long-chain alcohol, long-chain amine, long-chain ester, long chain fatty acids, long chain mercaptans.
7. preparation method according to claim 1, it is characterised in that: the electron-donating group compound include trialkyl phosphine,
At least one of trialkyl phosphine, alkylamine, enamine, alkyl hydrosulfide, aryl mercaptan, alkylaryl mercaptan, fatty acid.
8. preparation method according to claim 2, it is characterised in that: be added by the more non-uniform nanocrystal of partial size
After into the organic solvent with predetermined temperature, by the temperature of the organic solvent be maintained near the predetermined temperature 1 second-
1 hour.
9. preparation method according to claim 2, it is characterised in that: be added by the more non-uniform nanocrystal of partial size
Into the organic solvent with predetermined temperature and after being kept for a period of time, precursor needed for the shell of synthesizing nanocrystalline body is added
Matter is kept for a period of time cool down.
10. preparation method according to claim 2, it is characterised in that: add by the more non-uniform nanocrystal of partial size
Enter into the organic solvent with predetermined temperature and after being kept for a period of time, cool down and is isolated and purified.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610075952 | 2016-02-03 | ||
| CN2016100759529 | 2016-02-03 | ||
| CN201610828099.3A CN106435739B (en) | 2016-02-03 | 2016-09-19 | A kind of preparation method of nanocrystal |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610828099.3A Division CN106435739B (en) | 2016-02-03 | 2016-09-19 | A kind of preparation method of nanocrystal |
Publications (2)
| Publication Number | Publication Date |
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| CN110143579A true CN110143579A (en) | 2019-08-20 |
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| CN107737950B (en) * | 2017-10-25 | 2019-05-10 | 成都理工大学 | The preparation method for being uniformly distributed formula FeNi nanocrystal of octahedral structure |
| CN110655913A (en) * | 2018-06-28 | 2020-01-07 | 深圳市晟诚世纪科技有限公司 | Preparation method of nano crystal |
| CN111908436B (en) * | 2019-05-10 | 2022-12-02 | 苏州星烁纳米科技有限公司 | Preparation method of indium phosphide nanocrystalline and product prepared by same |
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