CN110132484A - A kind of protective device of the vacuum measurement tool of ion beam etching system - Google Patents
A kind of protective device of the vacuum measurement tool of ion beam etching system Download PDFInfo
- Publication number
- CN110132484A CN110132484A CN201910470430.2A CN201910470430A CN110132484A CN 110132484 A CN110132484 A CN 110132484A CN 201910470430 A CN201910470430 A CN 201910470430A CN 110132484 A CN110132484 A CN 110132484A
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- Prior art keywords
- baffler
- ion beam
- protective device
- measurement tool
- etching system
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L21/00—Vacuum gauges
- G01L21/30—Vacuum gauges by making use of ionisation effects
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention proposes a kind of protective device of the vacuum measurement tool of ion beam etching system; the ion beam etching system includes reaction cavity and the internal vacuum vacuum measurement tool for measuring reaction cavity; ventilation interface is provided on the reaction chamber body wall, the vacuum measurement tool is connected on ventilation interface.The protective device includes that the intracorporal baffler for blocking ventilation interface of reaction chamber is arranged in；Close to the reaction cavity inner wall of ventilation interface, perspective plane of the ventilation interface on wherein axis projections to baffler is located within the scope of the shielding surface of baffler the baffler.The protective device further includes driving baffler separate or push-pull mechanism close to ventilation interface.The present invention is by close to the baffler for blocking ventilation interface, effective barrier metal particle and ion beam；It drives baffler separate by push-pull mechanism or close to ventilation interface, prevents the gap of impurity blocking baffler and reaction cavity inner wall, keep appropriate clearance in the case where meeting ventilation requirement.
Description
Technical field
The invention belongs to semiconductor etching techniques field more particularly to a kind of vacuum measurement tools of ion beam etching system
Protective device.
Background technique
In the manufacturing process of semiconductor devices, etching technics is most frequent in numerous techniques to be used and occur.
As chip key structure from plane turns to 3D structure (such as: the FinFET structure in logical device), advanced deposits
Reservoir structures (such as: the essence that magnetic memory (MRAM) and resistance-variable storing device (ReRAM) these device architectures require etching technics
Exactness, repeatability and processing quality require higher and higher；It is special there are many planting simultaneously in these device manufacturing processes of MRAM
Metal material and metal compound material are needed using etching technics；In addition the quarter generated during plasma etch process
Pattern side wall after erosion byproduct of reaction major part and metal or rich metalliferous film and partial etching technique is not
It is steep to be also required to technique to supplement modification.Find the ion sputtering in ion beam etching of Fresnel to three of the above by Germicidal efficacy
Problem can be extremely improved.
Ion beam etching is to sputter material atom using the ion bombardment material surface with certain energy, from
And reach etching purpose.Ar, Kr or Xe etc inert gas are filled with ion source discharge room and its ionization are made to form plasma,
Then ion is drawn and is accelerated in pencil by grid, the ion beam with certain energy enters operating room, the directive surface of solids
Surface of solids atom is hit, material atom is sputtered, reaches etching purpose, belong to pure physical process.Ion beam etching it is excellent
Point is good directionality, anisotropy, and steepness is high；High resolution can reach 0.01 μm；Do not limited by etachable material (metal and
Compound, inorganic matter and organic matter, insulator and semiconductor)；Ion beam incident angles θ can be changed in etching process to control
Graph outline.Since ion beam etching is to material non-selectivity, those can not or be difficult to be situated between by chemical grinding, electricity and ground
Tribulation can be carried out thinned with thinned material by ion beam.In addition, due to the layer-by-layer stripped atom layer of ion beam energy, institute
With the microanalysis sample capability having, and can be used to carry out Precision Machining.
In ion beam etching system, the intracorporal vacuum state of chamber in etching process needs to monitor at any time, to guarantee to set
Standby and gas path module is in the state of normal work, therefore vacuum measuring device is connected on cavity wall, and sends out in ion beam
It dissipates in etching process, is directly contacted inside vacuum measuring device with inside cavity vacuum, to measure monitoring immediately.Vacuum measurement
The position of device is normally in divergence of ion beam angle, therefore can enter vacuum measurement dress in the transmitting of etching process intermediate ion beam
Inside is set, measuring circuit is destroyed, causes the damages such as vacuum gauge not to be available, improve the frequency of replacement, cost consumption is excessively high.
Summary of the invention
To solve the above problems, the present invention proposes a kind of protective device of the vacuum measurement tool of ion beam etching system,
It prevents that the vacuum measurement tool in installation ion beam etching system is caused to damage in ion beam etching system work process, reduces
The failure rate of the vacuum measurement tool of ion beam etching system.
Technical solution: the present invention proposes a kind of protective device of the vacuum measurement tool of ion beam etching system, it is described from
Beamlet etching system includes reaction cavity and the internal vacuum vacuum measurement tool for measuring reaction cavity, the reaction chamber
Ventilation interface is provided on body wall, the vacuum measurement tool is connected on ventilation interface；The protective device includes that setting exists
The intracorporal baffler for blocking ventilation interface of reaction chamber；The baffler close to ventilation interface reaction cavity inner wall, it is described
Perspective plane of the ventilation interface on wherein axis projections to baffler is located within the scope of the shielding surface of baffler.
Further, the protective device further includes driving baffler separate or push-pull mechanism close to ventilation interface.
Further, the direction of motion of the push-pull mechanism driving baffler is parallel to the central axes of ventilation interface.
Further, the push-pull mechanism includes the linear driving mechanism outside reaction cavity；The linear driving mechanism
It connects and drives baffler separate or close ventilation interface.
Further, it is also provided with second interface on the reaction chamber body wall, the outer end of the second interface is provided with method
It is blue；
The push-pull mechanism further includes vacuum welding bellows；The vacuum welding bellows includes that reaction is protruded by second interface
The bellows tube body of cavity；One end that the bellows tube body is located at outside reaction cavity is provided with flange, the bellows tube body
Flange connect with the flange seal of second interface outer end；The bellows tube body is located at the intracorporal one end of reaction chamber and is provided with
Closed end cap, the closed end cap are fixedly connected with baffler；And the closed end cap inner side end is fixed with along bellows
The push-pull rod that side extends axially outward；The push-pull rod is connected with the main shaft of linear driving mechanism；The linear driving mechanism drives
It is dynamic to be fixed on the closed end cap pushed away on railing the elastic force of bellows tube body is overcome to do linear movement.
Further, the linear driving mechanism is cylinder or linear electric machine.
Further, the curve form of the baffler with ventilation the curve form of reaction cavity inner wall of interface it is identical and
In parallel.
Further, the ion beam etching system further includes the baffle obstructed between ion beam and workpiece to be etched；Institute
It is identical as the material of baffle to state baffler.
The utility model has the advantages that the present invention is by close to the baffler for blocking ventilation interface, effective barrier metal particle and ion beam；
It drives baffler separate by push-pull mechanism or close to ventilation interface, prevents between impurity blocking baffler and reaction cavity inner wall
Gap keeps appropriate clearance in the case where meeting ventilation requirement, long using the time；It will be outside reaction cavity by vacuum welding bellows
Linear driving mechanism is connect with the baffler inside reaction cavity, while the connection type has good sealing to reaction cavity
Effect can not influence the vacuum sealing of reaction cavity.
Detailed description of the invention
Fig. 1 is the structural representation that the ion beam etching system of protective device of the invention is provided at vacuum measurement tool
Figure；
Fig. 2 is structural schematic diagram of the invention.
Specific embodiment
Ion beam etching system of the invention is rotatable in reaction cavity 1 as shown in Figure 1, include reaction cavity 1
Etching slide holder 2, the rotatable baffle 4 in reaction cavity 1 and the ion source 6 that can produce ion beam.
Reaction cavity 1 is the hollow cavity of irregular shape, and one side is provided with the outer sleeve 8 of prominent cavity, outer sleeve 8
Inside installation ion source 6, the divergent ion beam into reaction cavity 1 of ion source 6.Wafer 3 to be processed is placed in etching slide holder 2
On, the ion beam dissipated by ion source 6 performs etching wafer 3.Baffle 4 is located inside reaction cavity 1, can be in driving device 5
As adjusted position under the action of motor or cylinder.Before wafer 3 on etching slide holder 2 not yet reaches setting position, baffle 4 hinders
It is interposed between ion source 6 and etching slide holder 2, etching slide holder 2 and wafer 3 is protected, prevent them by ion beam
Damage to influencing final product quality；After etching the arrival setting position of wafer 3 on slide holder 2, the position of regulating fender 4 makes
It is moved to ion source 6 and etches the position except slide holder 2.
In ion beam etching system, the intracorporal vacuum state of chamber needs to monitor at any time, offers on 1 wall of reaction cavity logical
Gas interface 10 is connected with vacuum measurement tool 50 on interface 10 of ventilating, and in divergence of ion beam etching process, vacuum measurement work
50 inside of tool is directly contacted with 1 inside of reaction cavity, to measure monitoring immediately.
It is located in the spacious angular region of divergence of ion beam due to vacuum measurement tool 50, the ion beam emittance that ion source 6 emits
It can enter inside vacuum measurement tool 50, destroy measuring circuit.Ion beam bombardment is to 4 surface of baffle, the material of baffle 4 simultaneously
It is sputtered out, the material granule sputtered out can also enter the inside of vacuum measurement tool 50, cause internal blocking；Baffle
4 materials are usually conductive metal material, and the entrance of metallic particles will cause 50 internal short circuits of vacuum measurement tool, and damage is true
Empty measuring tool 50.
Such as Fig. 2, the protective device includes the baffler 100 for blocking ventilation interface 10 being arranged in reaction cavity 1.Institute
Baffler 100 is stated close to 1 inner wall of reaction cavity at ventilation interface 10, the ventilation interface 10 is along wherein axis projections to barrier
Perspective plane on plate 100 is located within the scope of the shielding surface of baffler 100, thus effectively barrier metal particle and ion beam.
Theoretically baffler 100 and 1 inner wall of reaction cavity be apart from smaller, bigger, the barrier effect of blocking range of baffler 100
Fruit is better.Therefore the curved form of the curve form of the baffler 100 of the present embodiment and 1 inner wall of reaction cavity at ventilation interface 10
Shape is identical and parallel, and such baffler 100 can be utmostly close to 1 inner wall of reaction cavity.
In addition the baffler 100 of the present embodiment is identical as the material of baffle 4, avoids generating a variety of materials under ion beam bombardment
The particle of matter is convenient for subsequent processing.
In ion beam etching system work process, the impurity particle of the generation such as sputter particles of baffle 4 and other positions
By-product deposits at each position of 1 inner wall of reaction cavity.Therefore after ion beam etching system work a period of time, resistance
Partition 100 and the gap of 1 inner wall of reaction cavity can be gradually reduced due to the deposition of impurity particle, once ventilation is unsmooth, reaction chamber
For 1 inside of body with ventilation interface 10 there are pressure difference, the vacuum values for causing vacuum measurement tool 50 to measure are inaccurate.In this case
Need to remove the cleaning of baffler 100.
In order to reduce baffler 100 remove cleaning frequency, the protective device further include driving baffler 100 it is separate or
Close to the push-pull mechanism of ventilation interface 10, the direction of motion of the push-pull mechanism driving baffler 100 is parallel to ventilation interface 10
Central axes.After a period of work, vacuum degree fluctuates ion beam etching system, only push-pull mechanism need to be made baffler
100 is mobile to the direction far from ventilation interface 10, increases the gap of baffler 100 and 1 inner wall of reaction cavity.
The embodiment of the present invention push-pull mechanism includes the linear driving mechanism 200 outside reaction cavity 1；The linear drive
Motivation structure 200 connects and drives baffler 100 separate or close ventilation interface 10.The linear driving mechanism 200 can be gas
Cylinder, linear electric machine or manual.
The present embodiment passes through vacuum welding bellows for the linear driving mechanism 200 and reaction cavity 1 outside reaction cavity 1
Internal baffler 100 connects, while the connection type has good sealing effect to reaction cavity 1, can not influence anti-
Answer the vacuum sealing of cavity 1.Specific connection type is as follows:
It is also provided with second interface on 1 wall of reaction cavity, the outer end of the second interface is provided with flange 201.
The vacuum welding bellows includes the bellows tube body 120 that reaction cavity 1 is protruded by second interface.The ripple
One end that pipe tube body 120 is located at outside reaction cavity is provided with flange 201, and the flange 201 of the bellows tube body 120 connects with second
The flange 201 of mouth outer end is tightly connected.
One end that the bellows tube body 120 is located in reaction cavity 1 is provided with closed end cap 120a, the closed end cap
120a is fixedly connected with baffler 100；And the closed end cap 120a inner side end is fixed with along bellows side axially outward
The push-pull rod 120b of extension；The push-pull rod 120b is connected with the main shaft of linear driving mechanism 200.The linear driving mechanism
The closed end cap 120a that 200 drivings are fixed on push-pull rod 120b overcomes the elastic force of bellows tube body 120 to do linear movement.
The push-pull mechanism can also use rack and pinion drive mechanism or screw rod swivel nut connection structure etc., realize barrier
The movement of plate 100.
Claims (8)
1. a kind of protective device of the vacuum measurement tool of ion beam etching system, the ion beam etching system includes reaction chamber
Body and internal vacuum vacuum measurement tool for measuring reaction cavity are provided with ventilation interface on the reaction chamber body wall,
The vacuum measurement tool is connected on ventilation interface, it is characterised in that: the protective device includes being arranged in reaction cavity
Block ventilation interface baffler；Reaction cavity inner wall of the baffler close to ventilation interface, the ventilation interface edge
Wherein the perspective plane on axis projections to baffler is located within the scope of the shielding surface of baffler.
2. the protective device of the vacuum measurement tool of ion beam etching system according to claim 1, it is characterised in that: institute
Stating protective device further includes driving baffler separate or push-pull mechanism close to ventilation interface.
3. the protective device of the vacuum measurement tool of ion beam etching system according to claim 2, it is characterised in that: institute
The direction of motion for stating push-pull mechanism driving baffler is parallel to the central axes of ventilation interface.
4. the protective device of the vacuum measurement tool of ion beam etching system according to claim 2 or 3, feature exist
In: the push-pull mechanism includes the linear driving mechanism outside reaction cavity；The linear driving mechanism connects and drives resistance
Partition is separate or close to ventilation interface.
5. the protective device of the vacuum measurement tool of ion beam etching system according to claim 4, it is characterised in that: institute
It states and is also provided with second interface on reaction chamber body wall, the outer end of the second interface is provided with flange；
The push-pull mechanism further includes vacuum welding bellows；The vacuum welding bellows includes that reaction is protruded by second interface
The bellows tube body of cavity；One end that the bellows tube body is located at outside reaction cavity is provided with flange, the bellows tube body
Flange connect with the flange seal of second interface outer end；The bellows tube body is located at the intracorporal one end of reaction chamber and is provided with
Closed end cap, the closed end cap are fixedly connected with baffler；And the closed end cap inner side end is fixed with along bellows
The push-pull rod that side extends axially outward；The push-pull rod is connected with the main shaft of linear driving mechanism；The linear driving mechanism drives
It is dynamic to be fixed on the closed end cap pushed away on railing the elastic force of bellows tube body is overcome to do linear movement.
6. the protective device of the vacuum measurement tool of ion beam etching system according to claim 4, it is characterised in that: institute
Stating linear driving mechanism is cylinder or linear electric machine.
7. the protective device of the vacuum measurement tool of ion beam etching system according to claim 1, it is characterised in that: institute
Curve form and the ventilation curve form of reaction cavity inner wall of interface for stating baffler are identical and parallel.
8. the protective device of the vacuum measurement tool of ion beam etching system according to claim 1, it is characterised in that: institute
Stating ion beam etching system further includes the baffle obstructed between ion beam and workpiece to be etched；The material of the baffler and baffle
Matter is identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910470430.2A CN110132484A (en) | 2019-05-31 | 2019-05-31 | A kind of protective device of the vacuum measurement tool of ion beam etching system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910470430.2A CN110132484A (en) | 2019-05-31 | 2019-05-31 | A kind of protective device of the vacuum measurement tool of ion beam etching system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110132484A true CN110132484A (en) | 2019-08-16 |
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ID=67583321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910470430.2A Pending CN110132484A (en) | 2019-05-31 | 2019-05-31 | A kind of protective device of the vacuum measurement tool of ion beam etching system |
Country Status (1)
| Country | Link |
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| CN (1) | CN110132484A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110712094A (en) * | 2019-09-06 | 2020-01-21 | 中国兵器科学研究院宁波分院 | Method for reducing ion beam polishing optical element surface pollution |
| CN111740008A (en) * | 2020-06-17 | 2020-10-02 | 中国科学院上海微系统与信息技术研究所 | Method for improving thickness uniformity of ion beam stripped film |
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| US20040226382A1 (en) * | 2003-05-16 | 2004-11-18 | Lischer D. Jeffrey | Contaminant deposition control baffle for a capacitive pressure transducer |
| TW200504869A (en) * | 2003-07-18 | 2005-02-01 | Au Optronics Corp | Buffer of pressure gauge sensor used in dry etching reaction chamber |
| CN101313204A (en) * | 2005-11-25 | 2008-11-26 | 英飞康有限责任公司 | Diaphragm arrangement for a vacuum measurement cell |
| KR20090062481A (en) * | 2007-12-13 | 2009-06-17 | 송종규 | Particle protector |
| CN103400737A (en) * | 2011-08-16 | 2013-11-20 | 金海平 | Vacuum gap pipe with improved structure |
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2019
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Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0549229A2 (en) * | 1991-12-23 | 1993-06-30 | The Boc Group, Inc. | Capacitance pressure transducer |
| KR20040012058A (en) * | 2002-07-31 | 2004-02-11 | 삼성전자주식회사 | Vacuum gauge having contamination protecting apparatus |
| US20040226382A1 (en) * | 2003-05-16 | 2004-11-18 | Lischer D. Jeffrey | Contaminant deposition control baffle for a capacitive pressure transducer |
| TW200504869A (en) * | 2003-07-18 | 2005-02-01 | Au Optronics Corp | Buffer of pressure gauge sensor used in dry etching reaction chamber |
| CN101313204A (en) * | 2005-11-25 | 2008-11-26 | 英飞康有限责任公司 | Diaphragm arrangement for a vacuum measurement cell |
| KR20090062481A (en) * | 2007-12-13 | 2009-06-17 | 송종규 | Particle protector |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110712094A (en) * | 2019-09-06 | 2020-01-21 | 中国兵器科学研究院宁波分院 | Method for reducing ion beam polishing optical element surface pollution |
| CN110712094B (en) * | 2019-09-06 | 2021-07-23 | 中国兵器科学研究院宁波分院 | Method for reducing ion beam polishing optical element surface pollution |
| CN111740008A (en) * | 2020-06-17 | 2020-10-02 | 中国科学院上海微系统与信息技术研究所 | Method for improving thickness uniformity of ion beam stripped film |
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Application publication date: 20190816 |