CN110139458A - A kind of electrode assembly and plasma apparatus of plasma apparatus - Google Patents

Abstract

The invention discloses an electrode device of a plasma device and the plasma device. The electrode device of the plasma device includes a lower base plate, a cooling pipeline and an upper base plate which are sequentially arranged from bottom to top, and the cooling capacity of the cooling pipeline is from the middle to the surrounding Incrementally, the temperature of the middle area of the electrode device is higher than the temperature of the surrounding area, the discharge intensity of the middle area is increased, and the problem of uneven etching caused by weak discharge in the middle area of the electrode device is improved.

Description

A kind of electrode device of plasma equipment and plasma equipment

technical field

The invention relates to the field of plasma equipment, in particular to an electrode device of a plasma equipment and the plasma equipment.

Background technique

Plasma equipment is widely used in plasma cleaning, etching, coating, etc. During the discharge process of plasma equipment, since the current passes through the surface of the electrode, there is a situation that the discharge intensity in the middle of the electrode plate is weaker than that in the surrounding boundary area. In the process of etching the circuit board, there are cases where the etching amount in the middle of the electrode is lower than that in the surrounding area. In practical application, since the uneven discharge intensity is difficult to be found directly, it is difficult for the staff to find the root cause even if the product is etched and cleaned unevenly. Therefore, people in the field often ignore this problem, resulting in uneven plasma discharge.

The electrode of the existing plasma equipment adopts the method of deep drilling, and the purpose of the cooling device used is often to reduce the temperature and make the temperature of the electrode device relatively uniform. For example, the cooling pipe adopts a serpentine structure, and the cooling water flows at a uniform speed. Through the inside of the electrode, the temperature of the whole electrode is relatively uniform. Therefore, during the discharge process, the discharge in the middle area is weaker than that in the surrounding area, and the equipment is etched unevenly. According to theoretical calculations, if we want to change the phenomenon of weak discharge in the middle region of the electrode, we can increase the temperature of the middle region of the electrode to increase the intensity of the discharge in the middle region, thereby increasing the etching amount in the middle region.

Contents of the invention

In order to overcome the disadvantages of the above-mentioned prior art, the present invention provides an electrode device of a plasma device and the plasma device, which solves the problem of low etching amount in the middle area of the electrode device of the plasma device.

The technical scheme that the present invention solves its technical problem adopts is:

An electrode device of a plasma device includes a lower base plate, a cooling pipeline and an upper base plate arranged in sequence from bottom to top, and the cooling capacity of the cooling pipeline increases gradually from the middle to the surrounding.

As a further improvement of the above scheme, the cooling pipeline includes water inlet pipes and water outlet pipes that communicate with each other, the water inlet pipes and water outlet pipes are alternately arranged at intervals, the water inlet pipes are rectangular spiral pipes extending from the periphery to the center, and the water outlet pipes are The water pipe is a rectangular spiral pipe extending from the center to the surroundings.

As a further improvement of the above solution, the distance between the water inlet pipes and the water outlet pipes alternately decreases gradually from the center to the periphery.

As a further improvement of the above solution, the shape of the cooling channel is consistent with that of a Fermat spiral.

As a further improvement of the above solution, the cooling ducts include a first serpentine duct and a second serpentine duct that are arranged symmetrically to each other and have the same shape, and the distribution density of the first serpentine ducts and the second serpentine ducts changes from the middle to the The ends gradually increase.

As a further improvement of the above solution, the cooling pipeline is a SUS304 stainless steel cooling pipeline or a SUS316 stainless steel cooling pipeline.

As a further improvement of the above solution, several through holes are provided at the same position of the upper substrate and the lower substrate.

As a further improvement of the above solution, the upper substrate and/or the lower substrate are aluminum alloy plates.

The present invention also provides a plasma device, comprising the above-mentioned electrode device.

The beneficial effects of the present invention have:

An electrode device of a plasma device provided by the present invention includes a lower base plate in a sandwich structure, a cooling pipe and an upper base plate, the cooling capacity of the cooling pipe increases from the middle to the surroundings, so that the temperature in the middle area of the electrode device is higher than that of the surroundings The temperature in the region increases the discharge intensity in the middle region, which improves the problem of uneven etching caused by weak discharge in the middle region of the electrode device.

The present invention also provides a plasma device, including the above-mentioned electrode device, which can effectively solve the problem of uneven etching caused by weak discharge in the middle area of the electrode device.

Description of drawings

The present invention will be further described below in conjunction with accompanying drawing and specific embodiment, wherein:

Fig. 1 is the explosion schematic diagram of the electrode device in the preferred embodiment of the present invention;

Fig. 2 is the structural representation of the electrode device in the preferred embodiment of the present invention;

Fig. 3 is a schematic structural view of a cooling pipeline in a preferred embodiment of the present invention;

Fig. 4 is a schematic structural view of the cooling pipeline in Embodiment 2 of the present invention;

Fig. 5 is a schematic structural diagram of a cooling pipeline in Embodiment 3 of the present invention.

Detailed ways

Specific embodiments of the present invention will be further described below. It should be noted here that the descriptions of these embodiments are used to help understand the present invention, but are not intended to limit the present invention. In addition, the technical features involved in the various embodiments of the present invention described below may be combined with each other as long as they do not constitute a conflict with each other.

Example 1

Referring to Fig. 1 and Fig. 2, an electrode device of a plasma device includes a lower substrate 3, a cooling channel 2 and an upper substrate 1 arranged in sequence from bottom to top, and the lower substrate 3, cooling channel 2 and upper substrate 1 are in the form of a sandwich structure, the cooling pipe 2 is set inside the electrode device to make the cooling effect more sufficient. The upper substrate 1 and/or the lower substrate 3 are aluminum alloy plates, which not only have good electrical conductivity, but also have strong corrosion resistance, and the cooling pipeline 2 is a SUS304 stainless steel cooling pipeline 2 or a SUS316 stainless steel cooling pipeline 2 , has high corrosion resistance, and has high plasticity and toughness at low temperature, room temperature and high temperature. Further, the cooling capacity of the cooling pipe 2 increases from the middle to the surroundings, making the middle temperature of the electrode device higher than the surrounding temperature, increasing the discharge intensity in the middle region, and improving the problem of uneven etching caused by weak discharge in the middle region of the electrode device.

Referring to Fig. 3 , the cooling pipeline 2 is obtained by deforming and straightening the Fermat spiral, and includes interconnected water inlet pipes 21 and water outlet pipes 22, and the water inlet pipes 21 and water outlet pipes 22 are alternately arranged at intervals. The water inlet pipe 21 is a rectangular spiral pipe extending from the periphery to the center, and the outlet pipe 22 is a rectangular spiral pipe extending from the center to the surroundings. The cooling medium such as condensed water flows in from the water inlet pipe 21 and flows out through the water outlet pipe 22. Since the water inlet pipe 21 and the water outlet pipe 22 are both rectangular spiral pipes, the closer to the middle area, the more turns the cooling pipe 2 makes, so that the water flow velocity in the middle area Gradually decrease, the cooling ability gradually decreases, so that the temperature in the middle area is higher than the surrounding temperature, and the higher the temperature, the stronger the discharge capacity of the plasma electrode, so the discharge intensity in the middle area is improved, and the weak discharge in the middle area of the electrode device is improved. The problem of uneven etching.

Further, the distance between two adjacent water inlet pipes 21 and water outlet pipes 22 gradually decreases from the center to the periphery. On the one hand, the temperature of the condensed water in the water inlet pipes 21 and water outlet pipes 22 increases gradually with the increase of the moving distance, so from From all around to the center, there is a pipe with a higher temperature crossing with a pipe with a lower temperature, and the closer to the periphery, the greater the temperature difference between the cooling pipes 2, so the water inlet pipe 21 and the water outlet pipe are gradually reduced from the center to the periphery. The spacing of 22 makes heat exchange between the water inlet pipe 21 and the water outlet pipe 22 easier, and balances the temperature in the area; on the other hand, it can further increase the temperature difference between the middle area and the peripheral area, and enhance the discharge intensity in the middle area.

Further, several through holes 12 are provided at the same position of the upper substrate 1 and the lower substrate 3, and the hollow cathode as an electrode participates in glow discharge.

The present invention also provides a plasma device, including the electrode device described in Embodiment 1, which can effectively improve the problem of uneven etching caused by weak discharge in the middle area of the electrode device.

Example 2

Referring to Fig. 1 and Fig. 4, an electrode device of a plasma device includes a lower substrate 3, a cooling channel 2 and an upper substrate 1 arranged in sequence from bottom to top, and the shape of the cooling channel 2 is consistent with that of a Fermat spiral , the distance between the outer rings is relatively close, and the distance between the centers is the largest. Increase the distance every circle, that is, the length of the cooling pipe 2 per unit area in the middle area is less than that in the peripheral area, which reduces the heat dissipation capacity of the middle area, so the temperature in the middle area is high. In the peripheral area, the discharge intensity in the middle area is increased, and the problem of uneven etching caused by weak discharge in the middle area of the electrode device is improved.

The present invention also provides a plasma device, including the electrode device described in Embodiment 2, which can effectively improve the problem of uneven etching caused by weak discharge in the middle area of the electrode device.

Example 3

Referring to Fig. 1 and Fig. 5, an electrode device of a plasma device comprises a lower base plate 3, a cooling channel 2 and an upper base plate 1 which are sequentially arranged from bottom to top, and the cooling channel 2 includes first symmetrically arranged and consistent in shape. The serpentine duct 23 and the second serpentine duct 24, the distribution density of the first serpentine duct 23 and the second serpentine duct 24 gradually increases from the middle to both ends, reducing the heat dissipation capacity of the middle area, so the temperature of the middle area It is higher than the peripheral area, thereby increasing the discharge intensity in the middle area, and improving the problem of uneven etching caused by weak discharge in the middle area of the electrode device.

The present invention also provides a plasma device, including the electrode device described in Embodiment 3, which can effectively improve the problem of uneven etching caused by weak discharge in the middle area of the electrode device.

The above is only a preferred embodiment of the present invention, but the present invention is not limited to the above examples, as long as it achieves the technical effect of the present invention by any same or similar means, it should belong to the protection scope of the present invention.

Claims (9)

1. a kind of electrode assembly of plasma apparatus, it is characterised in that: including the lower substrate (3), cold set gradually from top to bottom But the lowering ability of pipeline (2) and upper substrate (1), the cooling pipe (2) is incremented by around by centre.

2. a kind of electrode assembly of plasma apparatus according to claim 1, it is characterised in that: the cooling pipe (2) Including interconnected water inlet pipe (21) and outlet pipe (22), the water inlet pipe (21) and the setting of outlet pipe (22) alternate intervals, The water inlet pipe (21) is the rectangular coil pipeline extended from periphery to center, and the outlet pipe (22) is to prolong around from center The rectangular coil pipeline stretched.

3. a kind of electrode assembly of plasma apparatus according to claim 2, it is characterised in that: the water inlet pipe (21) and The distance of the alternate intervals of outlet pipe (22) is gradually reduced from center to periphery.

4. a kind of electrode assembly of plasma apparatus according to claim 1, it is characterised in that: the cooling pipe (2) Shape it is consistent with the shape of fermat spiral.

5. a kind of electrode assembly of plasma apparatus according to claim 1, it is characterised in that: the cooling pipe (2) Including being symmetrically set and consistent first snake pipe (23) of shape and the second snake pipe (24), first coiled pipe The distribution density of road (23) and the second snake pipe (24) is gradually increased from centre to both ends.

6. a kind of electrode assembly of plasma apparatus according to claim 1, it is characterised in that: the cooling pipe (2) For SUS304 stainless steel cooling pipe road (2) or SUS316 stainless steel cooling pipe road (2).

7. a kind of electrode assembly of plasma apparatus according to claim 1, it is characterised in that: the upper substrate (1) and The same position of lower substrate (3) is equipped with several through-holes (12).

8. a kind of electrode assembly of plasma apparatus according to claim 1, it is characterised in that: the upper substrate (1) and/ Or lower substrate (3) is aluminium alloy plate.

9. a kind of plasma apparatus, it is characterised in that: including electrode assembly a method as claimed in any one of claims 1-8.