CN110137354B - Method and apparatus for measuring characteristic dimension of semiconductor device - Google Patents
Method and apparatus for measuring characteristic dimension of semiconductor device Download PDFInfo
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- CN110137354B CN110137354B CN201910363090.3A CN201910363090A CN110137354B CN 110137354 B CN110137354 B CN 110137354B CN 201910363090 A CN201910363090 A CN 201910363090A CN 110137354 B CN110137354 B CN 110137354B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000012937 correction Methods 0.000 claims abstract description 37
- 238000012360 testing method Methods 0.000 claims abstract description 18
- 238000005259 measurement Methods 0.000 claims abstract description 7
- 238000004891 communication Methods 0.000 claims description 9
- 238000013507 mapping Methods 0.000 claims description 4
- 238000003860 storage Methods 0.000 abstract description 4
- 238000000691 measurement method Methods 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
- G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
- G01B21/08—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness for measuring thickness
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/70—Testing, e.g. accelerated lifetime tests
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Abstract
The invention discloses a method, a device and a readable storage medium for measuring the characteristic dimension of a semiconductor device, wherein the method comprises the following steps: detecting the first area and the second area based on the test key to obtain a characteristic size value of the semiconductor device on the first area and a characteristic size value to be corrected of the semiconductor device on the second area, determining a correction deviation value based on the offset relation between the first area and the second area on a panel to be corrected, correcting the characteristic size value to be corrected by using the correction deviation value, and taking the correction result as the characteristic size value of the semiconductor device on the second area. Based on the measurement method provided by the invention, the characteristic dimension values of the semiconductor devices on the first region and the second region can be obtained simultaneously only by one-time measurement, and the method has the characteristics of simple measurement process and less time consumption.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method and equipment for measuring the characteristic dimension of a semiconductor device.
Background
Critical Dimension (Critical Dimension) is an important Dimension that measures the level of design and fabrication of an integrated circuit, and generally refers to the minimum Dimension of a semiconductor device in the integrated circuit, such as the gate length of a MOS transistor.
In the OLED Touch process, a Scanning Electron Microscope (Critical Dimension-Scanning Electron Microscope) is used to obtain and measure a Scanning Electron Microscope image of a semiconductor device on an effective display area and an integrated circuit binding area (IC binding area) to obtain a feature size value. Because the effective display area and the integrated circuit binding area have a break difference, and the focal planes of the effective display area and the integrated circuit binding area are not on the same plane, scanning electron microscope imaging images on the effective display area and the integrated circuit binding area need to be acquired respectively and measured to obtain the characteristic dimension value of the semiconductor device. The process of respectively acquiring the imaging images of the scanning electron microscope for measuring the characteristic dimension because the focal planes are not on the same plane has the defect of long time consumption.
Disclosure of Invention
The invention provides a method and equipment for measuring the characteristic dimension of a semiconductor device, which can solve the technical problem of long time consumption in the prior art for measuring the characteristic dimension of the semiconductor device.
The invention provides a method for measuring the characteristic dimension of a semiconductor device, which is used for measuring the characteristic dimension value of the semiconductor device in a first area and a second area on a panel to be tested, and comprises the following steps:
setting a test key on a first area of a panel to be tested, and detecting the first area and a second area based on the test key to obtain a characteristic dimension value of a semiconductor device on the first area and a characteristic dimension value to be corrected of the semiconductor device on the second area;
determining a correction deviation value based on the offset relation between a first area and a second area on a panel to be tested;
and correcting the characteristic dimension value to be corrected by using the correction deviation value, and taking the correction result as the characteristic dimension value of the semiconductor device on the second area.
Furthermore, the invention also provides a measuring device, which comprises a processor, a memory and a communication bus;
the communication bus is used for realizing connection communication between the processor and the memory;
the processor is configured to execute one or more programs stored in the memory to implement the steps of the method for measuring the characteristic dimension of the semiconductor device as described above.
Further, the present invention provides a readable storage medium, which is a computer readable storage medium, and the computer readable storage medium stores one or more programs, and the one or more programs can be executed by one or more processors to implement the steps of the method for measuring the characteristic dimension of the semiconductor device as above.
Advantageous effects
The invention provides a method and a device for measuring the characteristic dimension of a semiconductor device, wherein the method is used for measuring the characteristic dimension value of the semiconductor device in a first area and a second area on a panel to be tested, and comprises the following steps: setting a test key on a first area of a panel to be tested, detecting the first area and a second area based on the test key to obtain a characteristic dimension value of a semiconductor device on the first area and a characteristic dimension value to be corrected of the semiconductor device on the second area, determining a correction deviation value based on a fault-difference relation between the first area and the second area on the panel to be tested, correcting the characteristic dimension value to be corrected by using the correction deviation value, and taking a correction result as the characteristic dimension value of the semiconductor device on the second area. Based on the measurement method provided by the invention, the characteristic dimension value of the semiconductor device on the second region can be obtained only by measuring the characteristic dimension value of the semiconductor device on the first region of the panel to be tested and correcting the characteristic dimension value based on the offset relation between the second region and the first region, namely, the characteristic dimension values of the semiconductor device on the first region and the semiconductor device on the second region can be obtained simultaneously only by one measurement.
Drawings
FIG. 1 is a flow chart of a method for measuring a feature size of a semiconductor device according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a panel to be tested according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a measurement apparatus according to an embodiment of the present invention.
Detailed Description
The technical solutions of the exemplary embodiments provided in the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. The following embodiments and their technical features may be combined with each other without conflict.
The invention provides a method for measuring the characteristic dimension of a semiconductor device, which is used for measuring the characteristic dimension value of the semiconductor device in a first area and a second area on a panel to be tested, please refer to fig. 1, and the method comprises the following steps:
s101, detecting the first area and the second area based on the test key to obtain a characteristic dimension value of the semiconductor device on the first area and a characteristic dimension value to be corrected of the semiconductor device on the second area.
A step of setting a test key on a first region of the panel to be tested may be included before step S101.
It should be understood that the first area and the second area are areas on the panel to be tested, on which characteristic dimension values of semiconductor devices are required to be measured, and the first area and the second area have a step relationship. The offset relationship refers to the difference in height between the plane of the first region and the plane of the second region.
In some examples, the first area and the second area may be two different areas, namely, an effective display area and a binding area on the panel to be tested.
The characteristic dimension value is an important dimension for measuring the design and manufacturing level of the integrated circuit, and is an important index for evaluating whether the pattern on the Mask (Mask) is completely transferred onto the glass substrate. Under normal conditions, in order to achieve the device performance required by the designer, the photoresist pattern formed after the photolithography process is consistent with the mask design dimension, and therefore, the deviation of the line width and the line distance of the formed pattern must be as small as possible.
The Test key, also called Test-key, is used for measuring the detection area of the characteristic dimension value setting of the measuring instrument. The test key is disposed on the first area. Referring to fig. 2, fig. 2 is a schematic structural diagram of a panel to be tested, 201 denotes an effective display area (a first area), 202 denotes a binding area (a second area), and 203 on 202 denotes a test key disposed on the effective display area (the first area).
The characteristic size value of the semiconductor device on the first area, which is obtained based on the test key detection, is accurate, and the obtained characteristic size value is the characteristic size value of the semiconductor device on the first area. And the characteristic dimension value of the semiconductor device on the second area obtained based on the test key detection is inaccurate, and the characteristic dimension value to be corrected of the semiconductor device on the second area is obtained.
It is to be understood that the present invention can be based on a characteristic dimension scanning electron microscope, or a scanning electron microscope, to detect the first region and the second region.
The scanning electron microscope mainly scans on the surface of a semiconductor device by means of electron beams, secondary electrons are excited on the surface of the semiconductor device and are related to the surface structure of the semiconductor device, the secondary electrons are collected by a detector, are converted into optical signals by a scintillator, and are converted into electric signals by a photomultiplier tube to control the intensity of the electron beams on a fluorescent screen, so that a scanning pattern synchronous with the electron beams is displayed.
The characteristic dimension scanning electron microscope has the advantages of high measurement accuracy, high test speed and the like, and becomes the most commonly used characteristic dimension measuring instrument in the manufacturing process of 65nm and below. Compared with a scanning electron microscope, the characteristic size scanning electron microscope is additionally provided with a characteristic size detection module. The characteristic size detection module automatically outputs the characteristic size of the semiconductor device by detecting the boundary of the scanning pattern.
S102, determining a correction deviation value based on the offset relation between the first area and the second area on the panel to be tested.
S103, correcting the characteristic dimension value to be corrected by using the correction deviation value, and taking the correction result as the characteristic dimension value of the semiconductor device on the second area.
In some examples, if the panel to be tested is an OLED panel, the height difference between the first region and the second region (the effective display region and the binding region) on the panel may be more than 15 um; if the panel to be tested is an LCD panel, the height difference between the first area and the second area (the effective display area and the binding area) on the panel can be 2-3 um.
The offset relationship between the first area and the second area corresponds to the correction offset value, and the correction offset value can be determined through the offset relationship. And the correction deviation value is used for correcting the characteristic dimension value to be corrected, and the corrected result is the characteristic dimension value of the semiconductor device on the second area.
According to the measuring method provided by the invention, the characteristic dimension value of the semiconductor device on the second area can be obtained only by measuring the characteristic dimension value of the semiconductor device on the first area of the panel to be tested and correcting the characteristic dimension value based on the offset relation between the second area and the first area, namely the characteristic dimension values of the semiconductor device on the first area and the semiconductor device on the second area can be obtained simultaneously by only one measurement.
Further embodiments of the measuring method according to the invention will be described below on the basis of the measuring method described above. The measurement method may include:
s201, setting a test key on a first area of a panel to be tested.
S202, detecting the first area and the second area based on the test key to obtain a characteristic size value of the semiconductor device on the first area and a characteristic size value to be corrected of the semiconductor device on the second area.
It should be understood that the explanation of the related words in this embodiment can refer to the explanation in the previous embodiment, and will not be described in detail later.
In some examples, when the first area is an effective display area on the panel to be tested, the second area is a binding area on the panel to be tested; and when the first area is a binding area on the panel to be tested, the second area is an effective display area on the panel to be tested.
S103, acquiring a difference value between the first area and the second area.
The step-off value is the height difference between the first area and the second area.
Step S103 obtains a difference value between the first region and the second region, which may be implemented as follows:
one of the methods is to detect a height difference between each of the first and second regions and the reference plane, and subtract the height difference between the first region and the reference plane from the height difference between the second region and the reference plane to obtain a cross-sectional difference value between the first region and the second region.
It should be understood that the reference plane is another plane different from the planes of the first and second regions. In some examples, the reference plane may be a glass substrate on a panel to be tested.
In another aspect, the height of the second region with respect to the first region may be detected using the first region as a reference plane, and the height may be used as a difference between the first region and the second region. Alternatively, the height of the first region relative to the second region is detected using the second region as a reference plane, and the height is used as a difference between the first region and the second region.
S104, inquiring the preset mapping relation between the breakpoint values of the first area and the second area and the correction deviation value to be selected by using the breakpoint values, and determining the correction deviation value to be selected corresponding to the breakpoint values as the correction deviation value.
The offset values of the first area and the second area have a corresponding mapping relation with the correction offset value to be selected, and if the offset values are 2, 1, 0, -1, -2, the corresponding correction offset value to be selected can be 0.2, 0.1, 0, -0.1, -0.2.
Based on the offset value obtained in step S102, a mapping relationship between the offset value and the correction offset value to be selected may be queried, and a correction offset value may be determined from the correction offset value to be selected.
And S105, calculating according to a preset operation formula by using the correction deviation value and the characteristic dimension value of the binding area to be corrected, and taking the calculation result as the characteristic dimension value of the binding area.
In other examples, the predetermined budget formula may be obtained by subtracting the modified offset value from the feature size value of the to-be-modified bonded area, adding the modified offset value to the feature size value of the to-be-modified bonded area, or multiplying the feature size value of the to-be-modified bonded area by the modified offset value.
The present invention further provides a measuring device, please refer to fig. 3, which includes a processor 301, a memory 302 and a communication bus 303;
the communication bus 303 is used for realizing connection communication between the processor 301 and the memory 302;
the processor 301 is configured to execute one or more programs stored in the memory 302 to implement the steps of the method for measuring the feature size of the semiconductor device provided in the above embodiments.
The above are only embodiments of the present invention, and not intended to limit the scope of the present invention, and all equivalent structures or equivalent processes performed by the present invention, such as the combination of technical features between various embodiments, or the direct or indirect application to other related technical fields, are all included in the scope of the present invention.
Claims (9)
1. The method is characterized in that the method is used for measuring the characteristic dimension values of the semiconductor devices in a first area and a second area on a panel to be tested, and when the first area is an effective display area on the panel to be tested, the second area is a binding area on the panel to be tested; when the first area is a binding area on the panel to be tested, the second area is an effective display area on the panel to be tested;
the method comprises the following steps:
detecting the first area and the second area based on a test key on the first area to obtain a characteristic size value of a semiconductor device on the first area and a characteristic size value to be corrected of the semiconductor device on the second area, wherein the test key is arranged on the first area of the panel to be tested;
determining a correction deviation value based on the offset relation between a first area and a second area on the panel to be tested;
and correcting the characteristic dimension value to be corrected by using the correction deviation value, and taking a correction result as the characteristic dimension value of the semiconductor device on the second area.
2. The method according to claim 1, wherein the correcting the to-be-corrected feature size value by using the correction deviation value to obtain a bound region feature size value comprises:
and calculating according to a preset operation formula by using the correction deviation value and the characteristic dimension value to be corrected, and taking a calculation result as the characteristic dimension value of the binding area.
3. The method according to claim 2, wherein the correcting the to-be-corrected feature size value by using the correction deviation value to obtain a bound region feature size value comprises:
and adding the correction deviation value and the characteristic dimension value to be corrected to obtain a characteristic dimension value of the binding area.
4. The method according to claim 2, wherein the correcting the to-be-corrected feature size value by using the correction deviation value to obtain a bound region feature size value comprises:
and subtracting the corrected deviation value from the characteristic dimension value to be corrected to obtain a characteristic dimension value of the binding area.
5. The method according to claim 2, wherein the correcting the to-be-corrected feature size value by using the correction deviation value to obtain a bound region feature size value comprises:
and multiplying the correction deviation value and the characteristic dimension value to be corrected to obtain a characteristic dimension value of the binding area.
6. The method of claim 1, wherein determining a modified deviation value based on a cross-tolerance relationship between a first area and a second area on the panel under test comprises:
acquiring a difference value between the first area and the second area;
and inquiring the preset mapping relation between the breakpoint values of the first area and the second area and the correction deviation value to be selected by using the breakpoint values, and determining the correction deviation value to be selected corresponding to the breakpoint values as a correction deviation value.
7. The method of claim 6, wherein obtaining a difference between the first region and the second region comprises:
and detecting the height difference between the first area and the reference plane and the height difference between the second area and the reference plane, and subtracting the height difference between the first area and the reference plane from the height difference between the second area and the reference plane to obtain a difference value between the first area and the second area.
8. The method of claim 6, wherein obtaining a discontinuity value between the first region and the second region comprises: detecting the height of a second area relative to a first area by taking the first area as a reference plane, and taking the height as a difference value between the first area and the second area;
or,
and detecting the height of the first area relative to the second area by taking the second area as a reference plane, and taking the height as a difference value between the first area and the second area.
9. A measurement device, comprising a processor, a memory, and a communication bus;
the communication bus is used for realizing connection communication between the processor and the memory;
the processor is configured to execute one or more programs stored in the memory to implement the steps of the method for measuring the characteristic dimension of the semiconductor device according to any one of claims 1 to 8.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW498425B (en) * | 2001-08-08 | 2002-08-11 | Taiwan Semiconductor Mfg | Method for measuring horizontal slant of image field |
| JP2002333701A (en) * | 2001-05-07 | 2002-11-22 | Nec Corp | Method for correcting mask data, program, proximity effect correction mask |
| JP2009139906A (en) * | 2007-11-13 | 2009-06-25 | Mitsubishi Electric Corp | Semiconductor device and dimension measurement method for the same |
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| JP5596141B2 (en) * | 2010-05-27 | 2014-09-24 | 株式会社日立ハイテクノロジーズ | Image processing apparatus, charged particle beam apparatus, charged particle beam apparatus adjustment sample, and manufacturing method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002333701A (en) * | 2001-05-07 | 2002-11-22 | Nec Corp | Method for correcting mask data, program, proximity effect correction mask |
| TW498425B (en) * | 2001-08-08 | 2002-08-11 | Taiwan Semiconductor Mfg | Method for measuring horizontal slant of image field |
| JP2009139906A (en) * | 2007-11-13 | 2009-06-25 | Mitsubishi Electric Corp | Semiconductor device and dimension measurement method for the same |
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