CN110071197A - A kind of high polarization degree spin LED and preparation method thereof based on non-polar plane gallium nitride - Google Patents
A kind of high polarization degree spin LED and preparation method thereof based on non-polar plane gallium nitride Download PDFInfo
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- 230000010287 polarization Effects 0.000 title claims abstract description 58
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 229910002601 GaN Inorganic materials 0.000 title abstract description 53
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- 239000010410 layer Substances 0.000 claims description 74
- 230000005294 ferromagnetic effect Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- 229910002704 AlGaN Inorganic materials 0.000 claims description 11
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- 230000004888 barrier function Effects 0.000 claims description 8
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- 229910052751 metal Inorganic materials 0.000 claims description 6
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- 230000008569 process Effects 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 238000005036 potential barrier Methods 0.000 claims description 3
- 229910003321 CoFe Inorganic materials 0.000 claims description 2
- 229910019236 CoFeB Inorganic materials 0.000 claims description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
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- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
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- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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Abstract
The spin LED and preparation method thereof for the high circular polarization polarizability based on non-polar plane gallium nitride that the invention discloses a kind of, non-polar plane (face m or the face a) gallium nitride is used to prepare the spin LED of inverted structure for substrate, the circular polarization polarizability upper limit and Study of Electron Spin Relaxation Time service life are effectively increased, so that the practical circular polarization polarizability that front goes out light increases substantially.
Description
Technical field
The invention belongs to technical field of semiconductors, more particularly to a kind of circular polarization polarizability high at room temperature gallium nitride from
Revolve the structure and preparation method thereof of LED.
Background technique
Nitride-based semiconductor has longer since its wider forbidden bandwidth makes Effect of Spin-orbit Coupling weaker
The eigen spin service life.There are strong polarization fields for the nitride material of wurtzite structure simultaneously, so that it can be in specific crystal orientation
Generate stronger Rashba Quantum geometrical phase effective magnetic field.The holding of spin service life long advantageous spin signals, and by force effective
Magnetic field is then conducive to the regulation to spin signals.These advantages become nitride-based semiconductor to prepare spintronics devices
Ideal material system.
Integrated circuit dimensions, which further reduce, at present encounters problems, including: quantum tunneling is imitated under small scale
It should influence heat dissipation problem caused by transistor switch performance, Highgrade integration, RC retardation ratio caused by parasitic capacitance under small size.Base
It is to solve the above problems to continue one of Moore's Law selection well in the room temperature electron device of electron spin freedom degree.It is based on
The spinning LED (spin LED) of cubic structure GaAs, lateral Spin Valve (lateral spin valve), spin
The research starting of field effect transistor (spin FET) isospin electronics device is relatively early to develop relative maturity up to now.But
The operating temperature of above-mentioned device is rested on mostly under the low temperature environment in laboratory.Spintronics device relative to gallium arsenic system
Part, the advantage of nitride are may be implemented to work at room temperature.The spontaneous polarized light source of circular polarization is in research biochemical activity
The fields such as the detection of molecule, visible light communication, magnetic medium all have important application.Realize spontaneous circular polarization polarization light source
One typical device is exactly spin LED.The current common spin LED limitation based on GaAs is mainly reflected in two
Aspect: being limited in scope for 1. emission wavelengths covering cannot be comprising blue light to ultraviolet short-wave band；2. can only keep at low temperature
Higher circular polarization polarizability, and at room temperature almost without circular polarization polarization.
Spin LED based on gallium nitride effectively will overcome limitation present in GaAs system spin LED, so that spin
LED is more further from industrial application.But there is also two problems to be solved by spin LED of the realization based on gallium nitride
([1] Chen W M et al., Applied Physics Letters.87 (19): 2599 (2005)): 1. fronts go out light
The upper limit of (light direction is parallel to C axis direction) circular polarization polarizability only has 3% or so under situation；2. gallium nitride light-emitting Quantum Well
In the polarization field of stress induced generation larger make the spin relaxation service life only in tens picoseconds of magnitude.In order to solve above-mentioned ask
Topic once used scheme ([2] Chen J using nano column array combination semi-metal ferroferric oxide nano particle in the world
Y et al.,Nano Letters.14(6):3130-3137(2014).).But this scheme needs to etch preparation nano-pillar
Array, it is larger to material damage, luminous efficiency is reduced, and technical process and existing conventional nitridation gallium LED technique is not simultaneous
Hold, is unfavorable for actual industrial application.
Summary of the invention
It is an object of the invention to the circular polarization polarizabilities of gallium nitride base light emitting Quantum Well in the case of overcoming front to go out light
The upper limit is low, spin relaxation service life short problem in Quantum Well, propose using the preparation of non-polar plane (face m or the face a) gallium nitride from
Revolve the scheme of LED.It can be designed so that the circular polarization polarizability upper limit of positive light out is increased to 33% from 3% in this way, while can
To effectively increase the spin relaxation service life, so that the circular polarization polarizability of practical light out is more nearly upper limit value.
To achieve the goals above, the present invention adopts the following technical scheme:
A kind of high polarization degree spin LED, it is characterized in that the inversion LED structure based on nonpolar face GaN, from the bottom to top successively
It include: nonpolar face GaN substrate, p-type GaN layer, p-type AlGaN electronic barrier layer, InGaN/GaN luminescent quantum well layer, N-type GaN
Layer, MgO tunnel layer, ferromagnetic layer and heavy metal protective layer.
Above-mentioned nonpolar face GaN substrate can be the face the m GaN or face a GaN.The p-type GaN layer, p-type AlGaN electronic blocking
Layer, InGaN/GaN luminescent quantum well layer, N-type GaN layer pass sequentially through MOCVD (Metallo-Organic Chemical Vapor deposition) method non-
Polar surface GaN substrate epitaxial growth obtains.
Wherein, the p-type GaN layer is the p-type GaN layer of Mg doping, and thickness is preferably 500~800nm, and Mg doping concentration is excellent
Selected control system is in 10E8/cm3Magnitude.
The p-type AlGaN electronic barrier layer is the p-type AlGaN layer of Mg doping, and thickness is preferably 5~15nm, the doping of Mg
Concentration is preferably controlled in 10E7/cm3Magnitude.The p-type AlGaN layer avoids N-type GaN layer injected electrons as electronic barrier layer
Luminous efficiency is reduced into p-type GaN layer.
The InGaN/GaN luminescent quantum well layer is generally the InGaN/GaN Quantum Well in 3~5 periods, in a cycle
The thickness of potential barrier and potential well is respectively 3.5~5nm and 10~15nm.
The N-type GaN layer is Si doped N-type GaN layer, and thickness is preferably 50~150nm, and the doping concentration of Si preferably controls
In 10E8/cm3Magnitude.
Above-mentioned MgO tunnel layer, ferromagnetic layer and heavy metal protective layer are the methods by magnetron sputtering on being inverted LED structure
The spin injection layer of preparation.Wherein, the thickness of MgO tunnel layer is preferably 1~4nm, for alleviating the feeromagnetic metal and N on its upper layer
Conductance mismatch problems between type GaN layer improve Spin Injection Efficiency.Ferromagnetic layer can use Co film, can also be used CoFe,
The ferromagnetic thin films such as CoFeB, NiFe, thickness are preferably 20~60nm, and ferromagnetic layer is for generating the polarized electronics that spins.Heavy metal
Protective layer can use Pt film, and the heavy metals such as Ta, Au film can also be used as protective layer, and thickness is preferably 10~40nm, use
In protection ferromagnetic layer, prevent it from aoxidizing.
After successively carrying out each outer layer growth and sputtering spin injection layer on nonpolar face GaN substrate, using traditional
The spin LED component of the high circular polarization polarizability based on nonpolar face GaN can be prepared in LED light carving technology.
It is vertical with surface as the Co film of ferromagnetic layer or the direction of magnetization of other ferromagnetic thin films in above structure therefore logical
The electron-spin polarization direction that ferromagnetic layer and MgO tunnel layer are injected into N-type GaN layer and Quantum Well is crossed also to hang down with sample surfaces
Directly.It is analyzed from the band structure of wurtzite structure nitride, it can be found that the face c and the face m (or the face a) GaN base Quantum Well front
The difference for the circular polarization polarizability upper limit that shines.Wurtzite structure GaN band edge transition amplitude phase can be calculated according to Kane model
The coefficient of pass is (54.4 (1996) of [3] Chuang, S.L et al., Physical Review B):
Wherein E+Form are as follows:
Δ in above formula1Energy, Δ are cleaved for crystalline field2、Δ3It is splitting energy relevant to Quantum geometrical phase.Assuming that injection rate
There is no relaxation, the transition that electronics cleaves band by conduction band to crystalline field in the case of the face c is several for electron spin in sub- trap
It can ignore, and electronics will generate the circularly polarized light of different polarization directions to light, heavy hole band transition, for GaN
The transition amplitude ratio of the two is 1:a.According to the structural parameters of GaN it can be concluded that 1:a ≈ 1:0.96, therefore final circular polarization polarization
The upper limit of degree isOn the other hand, in the case of non-polar plane (face m or the face a) GaN, electronics to
The transition of crystalline field splitting band will can not ignore.Electronics will generate phase from conduction band to the transition of crystalline field splitting band and heavy hole band
The circularly polarized light of same polarity, but the circularly polarized light polarity generated from conduction band to the transition of light hole band is then in contrast.Three kinds
The ratio of transition amplitude is 1:(a+b): (a+b)=1:1:1, and the upper limit of circular polarization is at this time
The practical circular polarization polarizability of spin LED is on the one hand related to the circular polarization polarizability upper limit of system, on the other hand
Additionally depend on the spin relaxation service life in luminescent quantum trap.The practical circular polarization polarizability that spin LED goes out light can indicate are as follows: Pc=
Pmax/ (1+ τ e/ τ s), wherein Pc is actual circular polarization polarizability, and Pmax is the upper limit of system circular polarization polarizability, τ e, τ s
The respectively radiative recombination lifetime of electronics and spin relaxation service life.In view of induction generates Rashba spin(-)orbit in GaN material
The polarized electric field of coupling is along C axis direction, and the spin relaxation mechanism dominated in GaN material is DP mechanism, can be speculated not
The Study of Electron Spin Relaxation Time service life in same polarization direction will be anisotropic.Pass through time resolution Ke Er in embodiment of the present invention
The mode of spectrum demonstrates situation of the spin polarization direction along the service life when direction m much larger than polarization direction along the direction C.To sum up
Described, nonpolar face GaN can improve the spin relaxation service life of the circular polarization polarizability upper limit and electronics, and this two o'clock
All be conducive to the raising of practical circular polarization polarizability.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of inverted m surface gallium nitride spin LED；
Fig. 2 is the gallium nitride time point that spin polarization direction is oriented parallel to C axis (B) around C axis precession (A) and spin polarization
Distinguish Ke Er results of spectral measurements.
Specific embodiment
Technical solution of the present invention is described in detail with the spin LED structure based on non-polar m-surface GaN below, but
It does not limit the scope of the invention in any way.
As shown in Figure 1, the structure of high polarization degree spin LED successively includes: non-polar m-surface GaN substrate, P from the bottom to top
It is type GaN layer, p-type AlGaN electronic barrier layer, the InGaN/GaN Quantum Well in 3-5 period, N-type GaN layer, MgO tunnel layer, ferromagnetic
Co layers of metal and Pt layers anti-oxidation.
Specific preparation process is as follows:
(1) a kind of undoped non-polar m-surface GaN epitaxial substrate is selected, with a thickness of 350-500 microns；
(2) the Mg doped p-type GaN epitaxial layer for growing 500nm~800nm in the GaN substrate of the face m by MOCVD, is adulterated dense
Degree substantially control is in 10E8/cm3Magnitude；
(3) the p-type AlGaN electronic barrier layer of one layer of 5nm~15nm or so is then grown, the doping concentration control of Mg exists
10E7/cm3Magnitude；
(4) the InGaN/GaN Quantum Well in 3-5 period is then grown, the thickness of potential barrier and potential well difference in a cycle
For 3.5nm~5nm and 10nm~15nm, the group of In is divided into 13%-20% in InGaN；
(5) the Si doped N-type GaN epitaxial layer of 50nm~150nm is then grown, doping concentration is controlled in 10E8/cm3Amount
Grade；
(6) by sample from the cavity for being transferred to magnetron sputtering in MOCVD cavity, the MgO of one layer of 1nm~4nm is first sputtered
Tunnel layer, for alleviating the conductance mismatch between feeromagnetic metal and the N-type GaN of contact；
(7) one layer of 20nm~60nm ferromagnetic thin film Co is sputtered again, then covers one layer of 10nm~40nm Pt as protective layer,
It is aoxidized for preventing Co from contacting with air.
After undergoing the above process, need to etch a part of sample by conventional ultraviolet photolithographic technique to p-type GaN
The depth of layer.After completing etching process, then passes through photoetching and stripping technology and draw common gold in two polar ends of spin LED
Belong to electrode, metal electrode can be the Ti/Au film of electron beam evaporation.Finally by entire sample in 200-400 degrees Celsius of nitrogen
It is made annealing treatment under atmosphere, to improve the contact between Co film, MgO film and N-type GaN layer.
In order to compare polarization direction along the spin relaxation in the direction C and the direction m, we pass through time resolution Ke Er spectral measurement
Spin service life in GaN under different spin-polarized states.The light that femto-second laser is emitted in time resolution Ke Er spectrum experiment
It is divided into two beams.Light beam (pump light) is changed into circularly polarized light by photoelastic, for exciting electronics in GaN to generate spin pole
Change；Another bunch polarised light (detection light) reaches sample surfaces after time delay line, and the electronics of spin polarization makes this beam
The linear polarization face of light rotates (Kerr effect).Postpone offline plane of polarization eventually by photodetector detection different time to turn
The size at angle, and then realize the measurement in spin service life.Measurement result is as shown in Fig. 2, pump light activated spin polarization direction in A
It is parallel with C axis, but the polarization direction of vertical and parallel C axis is made by the magnetic field of additional vertical C axis direction while being occurred, because
The signal that this measurement obtains is the superposition of vertical C axis with parallel C axis, and the obtained spin relaxation service life is 363ps.Pump light in B
The spin polarization direction of excitation is parallel with C axis and does not have externally-applied magnetic field, therefore the signal that measurement obtains all is from parallel C axis
Polarization direction, obtained spin relaxation service life are 196ps.Spin relaxation be in the plane perpendicular to C axis it is isotropic, because
This above-mentioned measurement result proves that polarization is much larger than polarization direction along the spin of C axis along the spin service life in the direction m.
Embodiment described above is merely illustrative of the invention's technical idea and feature, and the description thereof is more specific and detailed,
Its object is to make those skilled in the art can understand the content of the present invention and implement it accordingly, therefore cannot be only with this
To limit the scope of protection of the present invention.It should be pointed out that for those of ordinary skill in the art, not departing from this hair
Under the premise of bright design, various modifications and improvements can be made, i.e., variation made by all spirit revealed according to the present invention,
It should be included within the scope of protection of the present invention.
Claims (10)
- The LED 1. a kind of high polarization degree spins, it is characterized in that the inversion LED structure based on nonpolar face GaN, is successively wrapped from the bottom to top It includes: nonpolar face GaN substrate, p-type GaN layer, p-type AlGaN electronic barrier layer, InGaN/GaN luminescent quantum well layer, N-type GaN Layer, MgO tunnel layer, ferromagnetic layer and heavy metal protective layer.
- The LED 2. high polarization degree as described in claim 1 spins, which is characterized in that the nonpolar face GaN substrate is the face m GaN Substrate or the face a GaN substrate.
- The LED 3. high polarization degree as described in claim 1 spins, which is characterized in that the p-type GaN layer is the p-type of Mg doping GaN layer, doping concentration are controlled in 10E8/cm3Magnitude, with a thickness of 500~800nm.
- The LED 4. high polarization degree as described in claim 1 spins, which is characterized in that the p-type AlGaN electronic barrier layer is Mg The p-type AlGaN layer of doping, doping concentration are controlled in 10E7/cm3Magnitude, with a thickness of 5~15nm.
- The LED 5. high polarization degree as described in claim 1 spins, which is characterized in that the InGaN/GaN luminescent quantum well layer is The InGaN/GaN Quantum Well in 3~5 periods, in a cycle the thickness of potential barrier and potential well be respectively 3.5~5nm and 10~ 15nm。
- The LED 6. high polarization degree as described in claim 1 spins, which is characterized in that the N-type GaN layer is Si doped N-type GaN Layer, with a thickness of 50~150nm, the doping concentration of Si is controlled in 10E8/cm3Magnitude.
- The LED 7. high polarization degree as described in claim 1 spins, which is characterized in that the material of the ferromagnetic layer be Co, CoFe, CoFeB or NiFe；The heavy metal protective layer uses Pt, Ta or Au metal film.
- The LED 8. high polarization degree as described in claim 1 spins, which is characterized in that the MgO tunnel layer with a thickness of 1~ 4nm, ferromagnetic layer with a thickness of 20~60nm, heavy metal protective layer with a thickness of 10~40nm.
- 9. the preparation method of any high polarization degree spin LED of claim 1~8, first passes through metallo-organic compound chemistry Vapor deposition method successively epitaxial growth p-type GaN layer, p-type AlGaN electronic barrier layer, InGaN/ on nonpolar face GaN substrate GaN luminescent quantum well layer, N-type GaN layer, are then sequentially prepared MgO tunnel layer, ferromagnetic layer and a huge sum of money by the method for magnetron sputtering Belong to protective layer, the preparation of electrode is finally completed using photoetching process.
- 10. a kind of method for improving spin LED and going out optical circular polarizing polarizability, using nonpolar face GaN as substrate, and using inverted LED structure.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110429146A (en) * | 2019-08-07 | 2019-11-08 | 北京大学 | A kind of non-polar plane nitride quantum trap infrared detector and preparation method thereof |
| WO2023281618A1 (en) * | 2021-07-06 | 2023-01-12 | 日本電信電話株式会社 | Circularly polarized light modulating device |
| CN116013961A (en) * | 2023-03-24 | 2023-04-25 | 北京大学 | Preparation method of gallium nitride spin injection junction with self-oxidized surface |
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