CN110032830A - Cubic non-linearity magnetic control memristor simulator based on current transmission device - Google Patents
Cubic non-linearity magnetic control memristor simulator based on current transmission device Download PDFInfo
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- CN110032830A CN110032830A CN201910419013.5A CN201910419013A CN110032830A CN 110032830 A CN110032830 A CN 110032830A CN 201910419013 A CN201910419013 A CN 201910419013A CN 110032830 A CN110032830 A CN 110032830A
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- G06F30/30—Circuit design
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods
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Abstract
The invention discloses the cubic non-linearity magnetic control memristor simulators based on current transmission device, including integral operation circuit, multiplier M1, multiplier M2With resistance R2, integral operation circuit includes current transmission device U1, resistance R1With capacitor C1.The equivalent port identity of magnetic control memristor of the electrical characteristic of the cubic non-linearity magnetic control memristor simulator port a, b, and internal integral computing circuit input current is 0, does not need the circuits such as the voltage follower connected in input terminal for avoiding load effect.The cubic non-linearity magnetic control memristor simulator is only needed using 6 circuit components, and structure is simple, is easy to implement, and can be widely applied to the design of various memristor circuits (circuits such as memristor chaos, the cynapse of memristor bridge and memristor neuron).
Description
Technical field
The invention patent relates to new-type circuit element simulation devices to construct field, and in particular to three times based on current transmission device
Non-linear magnetic control memristor simulator.
Background technique
1971, the Cai Shaotang of University of California Berkeley professor from Circuit theory completeness, prediction except resistance,
Except capacitor and inductance, there is also the basic circuit elements that the 4th kind characterizes relationship between charge and magnetic flux, and are named
For memristor (memristor).HP Lab in 2008 gives to the world the result of one's studies in " Nature " magazine, announces physics realization
Two-terminal device with memristor feature.The breakthrough of HP Lab causes the extensive concern of academia and industry, starts people
To memristor research upsurge.
Memristor is nonlinear resistance, and resistance value can change with the history of input current or voltage, can
The quantity of electric charge or magnetic flux enough flowed through by the variation memory of resistance value.The research of memristor is related to microelectronics, condensed state object
The multidisciplinary field such as reason, materialogy, Circuits and Systems, computer and Neurobiology belongs to emerging cross discipline research.Memristor
Device has the characteristics that simple structure, easy of integration, high speed, low-power consumption and compatible with CMOS technology, is not only able to satisfy next-generation highly dense
Spend information storage and demand of the high-performance computer to general-purpose storage, moreover it is possible to realize nonvolatile state logical operation and class brain mind
Through state calculation function.
Memristor is extensive commercial there are no realizing at this stage, usually using existing circuit components (resistance, capacitor,
Diode, triode and operational amplifier etc.) construction single port circuit, make the electrical characteristic of port and the electrical characteristic of memristor
Quite, such circuit is referred to as memristor simulator.Now common memristor simulator has: flow control discharge tube memristor simulator, heat
Quick resistance memristor simulator, boundary migration memristor simulator, synaptic activity rely on plasticity memristor simulator, Pershin memristor
Simulator, Biolek memristor simulator, the active magnetic control memristor simulator of quadratic nonlinearity and the simulation of cubic non-linearity magnetic control memristor
Device etc..Different memristor simulators has different applications, and memristor simulator is in the circuit design of memristor, Circuit verification, electricity
Road optimization and reduction design cost etc. play an important role.
Wrap the active magnetic control memristor simulator of quadratic nonlinearity and the simulation of cubic non-linearity magnetic control memristor that professor Bocheng proposes
Device is widely used in the time-domain analysis, frequency-domain analysis and dynamic analysis of memristor circuit；The simulation of both memristors
Device is that the design of memristor simulator plays good exemplary role, has the integral being made of operational amplifier inside simulator
Computing circuit, and the input terminal of integral operation circuit connected voltage follower to avoid integral operation circuit load imitate
It answers.
Summary of the invention
Technical problem to be solved by the invention is to provide the cubic non-linearity magnetic control memristor simulations based on current transmission device
Device solves have load effect by the integrating circuit that operational amplifier forms in existing cubic non-linearity magnetic control memristor simulator,
The problem of needing the circuits such as series voltage follower.
The technical scheme to solve the above technical problems is that the cubic non-linearity magnetic control based on current transmission device is recalled
Hinder simulator, including integral operation circuit, multiplier M1, multiplier M2With resistance R2, the integral operation circuit includes that electric current passes
Defeated device U1, resistance R1With capacitor C1；The current transmission device U1Y pin, multiplier M2Input terminal m2Pin and resistance R2's
One end is connect with the port a；The current transmission device U1X pin and resistance R1One end be connected, the resistance R1The other end
Ground connection；The current transmission device U1Z pin and capacitor C1One end be connected, the capacitor C1The other end ground connection；The electric current
Transmitter U1W pin and multiplier M1Input terminal n1Pin with multiplier M1Input terminal m1Pin is connected；The multiplication
Device M1Output end v1Pin and multiplier M2Input terminal n2Pin is connected；The multiplier M2Output end v2Pin and resistance
R2The other end be connected；The current transmission device U1Port identity are as follows: ux=uy, iz=ix, iy=0, uw=uz, ux、uy、uzWith
uwRespectively indicate current transmission device U1X, y, z and w pin voltage, ix、iyAnd izRespectively indicate current transmission device U1X draw
The current value of foot, y pin and z pin.
Based on the above technical solution, the present invention can also be improved as follows.
Further, the current transmission device U1Model AD844；Be using the beneficial effect of this step: AD844 is common
Operating amplifier with current feedback, work in no feedback states, the calculation function of current transmission device can be directly realized by, have height
Broadband, response is fast and is easy to the advantages of buying.
Further, the multiplier M1Model AD633；Be using the beneficial effect of this step: AD633 is complete four
Quadrant analog multiplier has the advantages that high input impedance, high broadband, has a wide range of application and be easy to buy.
Further, the multiplier M1Output end v1VoltageInput terminal m1VoltageInput terminal n1Voltage
Relationship are as follows:g1For multiplier M1Scale factor.
Further, the multiplier M2Model AD633；Be using the beneficial effect of this step: AD633 is complete four
Quadrant analog multiplier has the advantages that high input impedance, high broadband, has a wide range of application and be easy to buy.
Further, the multiplier M2Output end v2VoltageInput terminal m2VoltageInput terminal n2VoltageRelationship are as follows:g2For multiplier M2Scale factor.
The beneficial effects of the present invention are: in the present invention, the cubic non-linearity magnetic control memristor simulator port a, b's is electrical
The equivalent port identity of magnetic control memristor of characteristic, and internal integral computing circuit input current is 0, is not needed in input terminal string
It is combined in circuits such as the voltage followers for avoiding load effect.The cubic non-linearity magnetic control memristor simulator is only needed using 6
Circuit components, structure is simple, is easy to implement, can be widely applied to various memristor circuits (memristor chaos, the cynapse of memristor bridge and
The circuits such as memristor neuron) design.
Detailed description of the invention
Fig. 1 is the principle of the present invention figure
Fig. 2 is the sinusoidal voltage source u that frequency is 100Hz in the embodiment of the present inventionin(t) and port current iin(t) volt-ampere
Characteristic Simulation curve graph
Fig. 3 is the sinusoidal voltage source u that frequency is 150Hz in the embodiment of the present inventionin(t) and port current iin(t) volt-ampere
Characteristic Simulation curve graph
Fig. 4 is the sinusoidal voltage source u that frequency is 200Hz in the embodiment of the present inventionin(t) and port current iin(t) volt-ampere
Characteristic Simulation curve graph
Specific embodiment
The principle and features of the present invention will be described below with reference to the accompanying drawings, and the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the invention.
As shown in Figure 1, the cubic non-linearity magnetic control memristor simulator based on current transmission device, including integral operation circuit,
Multiplier M1, multiplier M2With resistance R2, integral operation circuit includes current transmission device U1, resistance R1With capacitor C1；Electric current transmission
Device U1Y pin, multiplier M2Input terminal m2Pin and resistance R2One end connect with the port a；Current transmission device U1X draw
Foot and resistance R1One end be connected, resistance R1The other end ground connection；Current transmission device U1Z pin and capacitor C1One end be connected,
Capacitor C1The other end ground connection；Current transmission device U1W pin and multiplier M1Input terminal n1Pin with multiplier M1It is defeated
Enter to hold m1Pin is connected；Multiplier M1Output end v1Pin and multiplier M2Input terminal n2Pin is connected；Multiplier M2It is defeated
Outlet v2Pin and resistance R2The other end be connected；Current transmission device U1Port identity are as follows: ux=uy, iz=ix, iy=0, uw=
uz, ux、uy、uzAnd uwRespectively indicate current transmission device U1X, y, z and w pin voltage, ix、iyAnd izRespectively indicate electric current biography
Defeated device U1X pin, y pin and z pin current value.
In embodiments of the present invention, current transmission device U1Model AD844.
In embodiments of the present invention, multiplier M1Model AD633.
In embodiments of the present invention, multiplier M1Output end v1VoltageInput terminal m1VoltageInput terminal n1's
VoltageRelationship are as follows:g1For multiplier M1Scale factor.
In embodiments of the present invention, multiplier M2Model AD633.
In embodiments of the present invention, multiplier M2Output end v2VoltageInput terminal m2VoltageInput terminal n2's
VoltageRelationship are as follows:g2For multiplier M2Scale factor.
The operation principle of the present invention is that:
Memristor is characterization charge q and magnetic fluxBetween relationship basic circuit elements.Wrap professor Bocheng proposes three
The mathematical relationship of secondary non-linear magnetic control memristor simulator is
In formula, a and b are constants.Formula (1) is corresponding to be recalled and leads value
A, b both end voltage u of cubic non-linearity magnetic control memristor simulator based on current transmission devicein(t) and port current
iin(t) associated reference direction is used.
By the characteristic of current transmission device it is found that flowing into current transmission device U1Y pin electric current be 0；The input of multiplier
Impedance is very big, flows into multiplier M2Input terminal m2The electric current of pin is also 0；By Kirchhoff's current law (KCL) it is found that port current
iin(t) resistance R is all flowed through2。
By current transmission device U1Port identity known to:
In formula, t0And tnRespectively indicate the initial time and end time of integral.As shown in Figure 1, multiplier M1Output end v1
The voltage of pin
In formula,For from moment t0To moment tnThe cubic non-linearity magnetic control memristor simulator voltage u of inputin(t) magnetic flux
Amount.
Due toTherefore, multiplier M2Output end v2The voltage of pin
By Ohm's law it is found that flowing through resistance R2Electric current
It can be seen from the above, the mathematical relationship of cubic non-linearity magnetic control memristor simulator is represented by
By formula (7) it is found that input voltage uin(t) magnetic fluxIt controls to recall and leads valueSize, 1 institute of explanatory diagram
The circuit shown is magnetic control memristor simulator.Recalling in formula (7) is led into valueKnown to formula (2) comparison:
Further illustrating circuit shown in FIG. 1 really is cubic non-linearity magnetic control memristor simulator.
For complete the cubic non-linearity magnetic control memristor simulator based on current transmission device Multisim Software Simulation Test,
Take resistance R1=1k Ω, resistance R2=1k Ω, capacitor C1=0.47 μ F, multiplier M1Scale factor g1=0.1, multiplier M2's
Scale factor g2=0.1, AD633 and AD844 are all made of positive and negative 12 volts of dual power supplies.Setting excitation sinusoidal voltage source uin(t)
Peak value Um=1V, and t0Magnetic flux when=0It is 0, obtains sinusoidal voltage source uin(t) frequency f be respectively 100Hz, 150Hz and
The sinusoidal voltage source u of cubic non-linearity magnetic control memristor simulator when 200Hzin(t) and corresponding ports electric current iin(t) volt-ampere closes
It is that simulation curve is as shown in Figure 2, Figure 3 and Figure 4.
By Fig. 2, Fig. 3 and Fig. 4 it is found that the cubic non-linearity magnetic control memristor port simulator a and b based on current transmission device is lied prostrate
Peace relationship meets three substantive characteristics of memristor: the VA characteristic curve of magnetic control memristor simulator under 1. sinusoidal voltage source forcings
To pinch hysteresis curves；2. pinching hysteresis curves lobe area to reduce with the increase of sinusoidal voltage source frequency f；3. sinusoidal voltage source frequency f
Tend to pinch hysteresis curves when infinity and is punctured into (approximate) straight line.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (6)
1. the cubic non-linearity magnetic control memristor simulator based on current transmission device, which is characterized in that including integral operation circuit, multiply
Musical instruments used in a Buddhist or Taoist mass M1, multiplier M2With resistance R2, the integral operation circuit includes current transmission device U1, resistance R1With capacitor C1；The electricity
Flow transmitter U1Y pin, multiplier M2Input terminal m2Pin and resistance R2One end connect with the port a；The electric current passes
Defeated device U1X pin and resistance R1One end be connected, the resistance R1The other end ground connection；The current transmission device U1Z pin
With capacitor C1One end be connected, the capacitor C1The other end ground connection；The current transmission device U1W pin and multiplier M1's
Input terminal n1Pin with multiplier M1Input terminal m1Pin is connected；The multiplier M1Output end v1Pin and multiplier M2
Input terminal n2Pin is connected；The multiplier M2Output end v2Pin and resistance R2The other end be connected；The electric current transmission
Device U1Port identity are as follows: ux=uy, iz=ix, iy=0, uw=uz, ux、uy、uzAnd uwRespectively indicate current transmission device U1X,
Y, the voltage of z and w pin, ix、iyAnd izRespectively indicate current transmission device U1X pin, y pin and z pin current value.
2. the cubic non-linearity magnetic control memristor simulator according to claim 1 based on current transmission device, which is characterized in that
The current transmission device U1Model AD844.
3. the cubic non-linearity magnetic control memristor simulator according to claim 1 based on current transmission device, which is characterized in that
The multiplier M1Model AD633.
4. the cubic non-linearity magnetic control memristor simulator according to claim 1 based on current transmission device, which is characterized in that
The multiplier M1Output end v1VoltageInput terminal m1VoltageInput terminal n1VoltageRelationship are as follows:g1For multiplier M1Scale factor.
5. the cubic non-linearity magnetic control memristor simulator according to claim 1 based on current transmission device, which is characterized in that
The multiplier M2Model AD633.
6. the cubic non-linearity magnetic control memristor simulator according to claim 1 based on current transmission device, which is characterized in that
The multiplier M2Output end v2VoltageInput terminal m2VoltageInput terminal n2VoltageRelationship are as follows:g2For multiplier M2Scale factor.
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| CN112906878A (en) * | 2021-03-11 | 2021-06-04 | 杭州电子科技大学 | Hopfield neural network model under simulated electromagnetic radiation |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107092746A (en) * | 2017-04-19 | 2017-08-25 | 江西理工大学 | A kind of circuit design method of the isomery magnetic control memristor model based on Chua circuits |
| CN108804840A (en) * | 2018-06-15 | 2018-11-13 | 成都师范学院 | A kind of extremely simple floating ground magnetic control memristor circuit simulation model |
| WO2019018564A1 (en) * | 2017-07-18 | 2019-01-24 | Syntiant | Neuromorphic synthesizer |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107092746A (en) * | 2017-04-19 | 2017-08-25 | 江西理工大学 | A kind of circuit design method of the isomery magnetic control memristor model based on Chua circuits |
| WO2019018564A1 (en) * | 2017-07-18 | 2019-01-24 | Syntiant | Neuromorphic synthesizer |
| CN108804840A (en) * | 2018-06-15 | 2018-11-13 | 成都师范学院 | A kind of extremely simple floating ground magnetic control memristor circuit simulation model |
Non-Patent Citations (2)
| Title |
|---|
| 余波;何秋燕;袁晓;: "任意阶标度分形格分抗与非正则格型标度方程", 物理学报, no. 07 * |
| 王将;钱辉;包伯成;徐权;陈墨;: "一种浮地磁控忆阻模拟器设计与特性分析", 电子元件与材料, no. 09 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112906878A (en) * | 2021-03-11 | 2021-06-04 | 杭州电子科技大学 | Hopfield neural network model under simulated electromagnetic radiation |
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