CN110038594A - A kind of preparation method of porous oxidation indium/indium sulfide heterojunction material - Google Patents
A kind of preparation method of porous oxidation indium/indium sulfide heterojunction material Download PDFInfo
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- CN110038594A CN110038594A CN201910392644.2A CN201910392644A CN110038594A CN 110038594 A CN110038594 A CN 110038594A CN 201910392644 A CN201910392644 A CN 201910392644A CN 110038594 A CN110038594 A CN 110038594A
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- 239000000463 material Substances 0.000 title claims abstract description 61
- 229910052738 indium Inorganic materials 0.000 title claims abstract description 57
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 230000003647 oxidation Effects 0.000 title claims abstract description 38
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 38
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 238000012545 processing Methods 0.000 claims abstract description 56
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims abstract description 43
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims abstract description 43
- 239000002243 precursor Substances 0.000 claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 30
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims abstract description 28
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 claims abstract description 24
- 238000001354 calcination Methods 0.000 claims abstract description 21
- 230000008014 freezing Effects 0.000 claims abstract description 14
- 238000007710 freezing Methods 0.000 claims abstract description 14
- 239000004201 L-cysteine Substances 0.000 claims abstract description 12
- 235000013878 L-cysteine Nutrition 0.000 claims abstract description 12
- 238000001027 hydrothermal synthesis Methods 0.000 claims abstract description 10
- UVLYPUPIDJLUCM-UHFFFAOYSA-N indium;hydrate Chemical compound O.[In] UVLYPUPIDJLUCM-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000003837 high-temperature calcination Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000002156 mixing Methods 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 5
- -1 polyethylene pyrrole Polymers 0.000 claims description 3
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 2
- DWNBOPVKNPVNQG-LURJTMIESA-N (2s)-4-hydroxy-2-(propylamino)butanoic acid Chemical compound CCCN[C@H](C(O)=O)CCO DWNBOPVKNPVNQG-LURJTMIESA-N 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 11
- 230000001699 photocatalysis Effects 0.000 abstract description 8
- 229910010272 inorganic material Inorganic materials 0.000 abstract description 2
- 239000011147 inorganic material Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 25
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 21
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 16
- 229910003437 indium oxide Inorganic materials 0.000 description 13
- 229910002651 NO3 Inorganic materials 0.000 description 9
- 239000008367 deionised water Substances 0.000 description 9
- 229910021641 deionized water Inorganic materials 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000007146 photocatalysis Methods 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- PYWVYCXTNDRMGF-UHFFFAOYSA-N rhodamine B Chemical compound [Cl-].C=12C=CC(=[N+](CC)CC)C=C2OC2=CC(N(CC)CC)=CC=C2C=1C1=CC=CC=C1C(O)=O PYWVYCXTNDRMGF-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 229940043267 rhodamine b Drugs 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000013019 agitation Methods 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/02—Sulfur, selenium or tellurium; Compounds thereof
- B01J27/04—Sulfides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/60—Catalysts, in general, characterised by their form or physical properties characterised by their surface properties or porosity
- B01J35/61—Surface area
- B01J35/613—10-100 m2/g
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/60—Catalysts, in general, characterised by their form or physical properties characterised by their surface properties or porosity
- B01J35/63—Pore volume
- B01J35/633—Pore volume less than 0.5 ml/g
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/08—Heat treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/08—Heat treatment
- B01J37/10—Heat treatment in the presence of water, e.g. steam
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/32—Freeze drying, i.e. lyophilisation
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- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/30—Treatment of water, waste water, or sewage by irradiation
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- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2101/00—Nature of the contaminant
- C02F2101/30—Organic compounds
- C02F2101/308—Dyes; Colorants; Fluorescent agents
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- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
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- C02F2101/34—Organic compounds containing oxygen
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- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
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- C02F2101/30—Organic compounds
- C02F2101/36—Organic compounds containing halogen
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- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
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- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2305/00—Use of specific compounds during water treatment
- C02F2305/10—Photocatalysts
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Abstract
The present invention provides a kind of preparation methods of porous oxidation indium/indium sulfide heterojunction material, belong to porous inorganic material field.The preparation method of porous oxidation indium/indium sulfide heterojunction material provided by the invention is the following steps are included: polyvinylpyrrolidone, indium nitrate and water are mixed, formation precursor solution；Precursor solution is successively carried out to freezing processing and deicing processing, obtains polyvinylpyrrolidone/indium nitrate hybrid material of porous structure；The polyvinylpyrrolidone of the porous structure/indium nitrate hybrid material is subjected to calcination processing, obtains porous oxidation indium；After the porous oxidation indium is mixed with L-cysteine and water, hydro-thermal reaction is carried out, porous oxidation indium/indium sulfide heterojunction material is obtained.Preparation method provided by the invention is simple to operation, and the product photocatalytic activity that method provided by the invention is prepared is preferable.
Description
Technical field
The present invention relates to porous inorganic material field more particularly to a kind of porous oxidation indium/indium sulfide heterojunction materials
Preparation method.
Background technique
In recent years, energy crisis and problem of environmental pollution cause the extensive attention of people.Photocatalysis technology is as a kind of
Clean and effective, it is environmental-friendly, directly can provide an effective way in order to solve the above problem using the emerging technology of solar energy
Diameter.Photocatalysis technology not only shows huge application potential in terms of producing the energy problems such as hydrogen and carbon dioxide reduction, but also
It also plays an important role in terms of the pollutions processing such as degradable organic pollutant and reducing heavy metal.Therefore, photocatalysis technology
Always researcher focus of attention.
Indium oxide (In2O3) as a kind of important visible-light photocatalyst, with relatively narrow band gap width (2.87eV) and
Excellent photochemical stability and hypotoxicity, in terms of obtained extensive concern.However,
Although its narrow band gap can make In2O3Visible light is made full use of, but also increases In simultaneously2O3Internal photo-generated carrier radiation
Compound probability.Therefore, how In is improved2O3Photocatalysis performance be of great significance.
In addition, the method for obtaining catalysis material at present mainly has template, sol-gel method and self-assembly method etc..So
And these methods usually require it is complicated remove template procedure or stringent experiment condition, this seriously constrains their big rule
Mould application.
Summary of the invention
In view of this, the present invention provides a kind of preparation method of porous oxidation indium/indium sulfide heterojunction material, the present invention
The preparation method of offer is simple to operation.
The present invention provides a kind of preparation methods of porous oxidation indium/indium sulfide heterojunction material, comprising the following steps:
(1) polyvinylpyrrolidone, indium nitrate and water are mixed, obtains precursor solution；
(2) precursor solution that the step (1) obtains successively is subjected to freezing processing and deicing is handled, obtain porous knot
The polyvinylpyrrolidone of structure/indium nitrate hybrid material；
(3) polyvinylpyrrolidone for the porous structure that the step (2) obtains/indium nitrate hybrid material is calcined
Processing, obtains porous oxidation indium；
(4) after mixing the porous oxidation indium that the step (3) obtains with L-cysteine and water, hydro-thermal reaction is carried out,
Obtain porous oxidation indium/indium sulfide heterojunction material.
Preferably, the mass concentration of polyvinylpyrrolidone is 1~20% in step (1) precursor solution.
Preferably, the mass concentration of indium nitrate is 1~10% in step (1) precursor solution.
Preferably, the temperature of freezing processing is -196 DEG C in the step (2).
Preferably, deicing processing carries out under the conditions of low-temp low-pressure in the step (2), the temperature of the deicing processing
It is -80~-60 DEG C, vacuum degree≤20Pa of the deicing processing.
Preferably, step (3) calcination processing includes the low temperature calcination processing and high-temperature calcination processing successively carried out；Institute
The temperature for stating low temperature calcination processing is 150~400 DEG C, and the time is 0.5~2h；The temperature of high-temperature calcination processing is 500~
700 DEG C, the time is 0.5~3h.
Preferably, it is 0.5~3 DEG C/min that the step (3), which is warming up to the heating rate of low temperature calcination treatment temperature,；Heating
Heating rate to high temperature calcination processing temperature is 0.5~3 DEG C/min.
Preferably, porous oxidation indium and the mass ratio of L-cysteine are 1:0.38~1.51 in the step (4).
Preferably, the mass ratio of porous oxidation indium and water is 1~5:1 in the step (4).
Preferably, the temperature of step (4) hydro-thermal reaction is 150~200 DEG C, and the time is 12~36h.
The present invention provides a kind of preparation methods of porous oxidation indium/indium sulfide heterojunction material, comprising the following steps: will
Polyvinylpyrrolidone, indium nitrate and water mixing, form precursor solution；Precursor solution is successively carried out to freezing processing and is removed
Ice processing, obtains polyvinylpyrrolidone/indium nitrate hybrid material of porous structure；By the polyvinyl pyrrole of the porous structure
Alkanone/indium nitrate hybrid material carries out calcination processing, obtains porous oxidation indium；By the porous oxidation indium and L-cysteine and
After water mixing, hydro-thermal reaction is carried out, porous oxidation indium/indium sulfide heterojunction material is obtained.Preparation method letter provided by the invention
It is single easy to operate.Embodiment shows that there is porous oxidation indium/indium sulfide heterojunction material that the present invention is prepared preferable light to urge
Change activity.
Detailed description of the invention
Fig. 1 is the PVP/In (NO that 1 step of embodiment (2) obtains3)3The scanning electron microscope (SEM) photograph of hybrid material；
Fig. 2 is the porous In that 1 step of embodiment (3) obtains2O3The scanning electron microscope (SEM) photograph of material；
Fig. 3 is the porous In that 1 step of embodiment (4) obtains2O3/In2S3The scanning electron microscope (SEM) photograph of hetero-junctions；
Fig. 4 is the PVP/In (NO that 2 step of embodiment (2) obtains3)3The scanning electron microscope (SEM) photograph of hybrid material；
Fig. 5 is the porous In that 2 step of embodiment (3) obtains2O3The scanning electron microscope (SEM) photograph of material；
Fig. 6 is the porous In that 2 step of embodiment (4) obtains2O3/In2S3The scanning electron microscope (SEM) photograph of hetero-junctions；
Fig. 7 is the PVP/In (NO that 3 step of embodiment (2) obtains3)3The scanning electron microscope (SEM) photograph of hybrid material；
Fig. 8 is the porous In that 3 step of embodiment (3) obtains2O3The scanning electron microscope (SEM) photograph of material；
Fig. 9 is the porous In that 3 step of embodiment (4) obtains2O3/In2S3The scanning electron microscope (SEM) photograph of hetero-junctions；
Figure 10 is the porous In that Examples 1 to 3 is prepared2O3/In2S3The XRD diagram of hetero-junctions；
Figure 11 is the porous In that Examples 1 to 3 is prepared2O3/In2S3The UV-Vis DRS figure of hetero-junctions；
Figure 12 is the porous In that Examples 1 to 3 is prepared2O3/In2S3The photocatalysis performance curve of hetero-junctions.
Specific embodiment
The present invention provides a kind of preparation methods of porous oxidation indium/indium sulfide heterojunction material, comprising the following steps:
(1) polyvinylpyrrolidone, indium nitrate and water are mixed, obtains precursor solution；
(2) precursor solution that the step (1) obtains successively is subjected to freezing processing and deicing is handled, obtain porous knot
The polyvinylpyrrolidone of structure/indium nitrate hybrid material；
(3) polyvinylpyrrolidone for the porous structure that the step (2) obtains/indium nitrate hybrid material is calcined
Processing, obtains porous oxidation indium；
(4) after mixing the porous oxidation indium that the step (3) obtains with L-cysteine and water, hydro-thermal reaction is carried out,
Obtain porous oxidation indium/indium sulfide heterojunction material.
In the present invention, all raw materials are commercial goods unless otherwise specified.
The present invention mixes polyvinylpyrrolidone, indium nitrate and water, obtains precursor solution.
In the present invention, the average molecular mass of the polyvinylpyrrolidone is preferably 120~1,400,000, into one
Step preferably 1,300,000, the present invention preferably controls the average molecular mass of polyvinylpyrrolidone within the above range, has
Conducive to regulation pore structure.
In the present invention, the mass concentration of polyvinylpyrrolidone is preferably 1~20% in the precursor solution, into one
Step preferably 2~15%, more preferably 4~10%；In the precursor solution mass concentration of indium nitrate be preferably 1~
10%, further preferably 2~8%, more preferably 3~7%.
It after the present invention preferably first mixes indium nitrate and water, then mixes with polyvinylpyrrolidone, the indium nitrate and water
Mixed mode and the mode mixed again with pyrrolidones are both preferably magnetic agitation.In the present invention, the magnetic agitation
Rate be preferably 500~1000r/min, more preferably 600~900r/min, most preferably 700~800r/min；The nitre
The mixing time of sour indium aqueous solution and polyvinylpyrrolidone is preferably 2~10h, more preferably 3~9h, most preferably 6~8h.
Present invention preferably employs indium nitrate is first dissolved, it is redissolved the mode of polyvinylpyrrolidone, and be stirred under the above conditions,
Be conducive to obtain dissolution of raw material more uniform.
After obtaining precursor solution, the precursor solution is successively carried out freezing processing and deicing processing by the present invention, is obtained
To polyvinylpyrrolidone/indium nitrate hybrid material of porous structure.
In the present invention, the temperature of the freezing processing is preferably -196 DEG C.In the present invention, shown freezing processing is preferred
It being carried out in liquid nitrogen, the time of the freezing processing is preferably 5~20min, further preferably 8~18min, and more preferably 10
~15min.The present invention carries out freezing processing to precursor solution, and the hydrone in precursor solution is made to form ice crystal.
After freezing processing, the present invention carries out deicing processing to the precursor solution after freezing.
In the present invention, the deicing processing preferably carries out under the conditions of low-temp low-pressure, and the temperature of the deicing processing is excellent
It is selected as -80~-60 DEG C, further preferably -80~-70 DEG C；The vacuum degree of deicing processing preferably≤20Pa, it is further excellent
Choosing≤15Pa, more preferably≤5Pa.Under the conditions of low-temp low-pressure, ice crystal distillation escapes, in turn the present invention as water vapor
Form polyvinylpyrrolidone/indium nitrate hybrid material of porous structure.
After obtaining polyvinylpyrrolidone/indium nitrate hybrid material of porous structure, the present invention is by the porous structure
Polyvinylpyrrolidone/indium nitrate hybrid material carries out calcination processing, obtains porous oxidation indium.
In the present invention, the calcination processing preferably includes the low temperature calcination successively carried out processing and high-temperature calcination processing.
In the present invention, the temperature of the low temperature calcination processing is preferably 150~400 DEG C, and more preferably 200~350 DEG C, most preferably
280~300 DEG C；The heating rate for being warming up to low temperature calcination treatment temperature is preferably 0.5~3 DEG C/min, more preferable 1~3 DEG C/
Min, more preferable 1.5~2 DEG C/min；The time of the low temperature calcination processing is preferably 0.5~2h, further preferably 1~
1.5h.In the present invention, the low temperature calcination processing carries out in air atmosphere.
After the completion of low temperature calcination processing, the present invention continues high-temperature calcination processing；The temperature of the high-temperature calcination processing
Preferably 500~700 DEG C, more preferably 520~650 DEG C, most preferably 550~600 DEG C；It is warming up to high-temperature calcination treatment temperature
Heating rate be preferably 0.5~3 DEG C/min, more preferable 1~3 DEG C/min, more preferable 1.5~2 DEG C/min；The high-temperature calcination
The time of processing is preferably 0.5~3h, more preferable 1~2.5h, most preferably 1.5~2h.In the present invention, at the high-temperature calcination
Reason carries out in air atmosphere.
The present invention is poly- in polyvinylpyrrolidone/indium nitrate hybrid material of porous structure during calcination processing
Vinylpyrrolidone thermally decompose and air in oxygen reaction ultimately generate the gases such as carbon dioxide, nitrogen dioxide evolution；
Meanwhile indium nitrate is decomposed to form indium oxide under the high temperature conditions.The present invention makes the polyethylene pyrrole of porous structure by calcination processing
Pyrrolidone/indium nitrate hybrid material conversion forms porous oxidation indium.
After obtaining porous oxidation indium, after the present invention mixes porous oxidation indium with L-cysteine and water, it is anti-to carry out hydro-thermal
It answers, obtains porous oxidation indium/indium sulfide heterojunction material.
In the present invention, the porous oxidation indium and the mass ratio of L-cysteine are preferably 1:0.38~1.51, into one
Step is preferably 1:0.4~1.5, more preferably 1:0.6~1.3, most preferably 1:0.8~1.0.In the present invention, described porous
The mass ratio of indium oxide and water is preferably 1~5:1, further preferably 2~4:1.
In the present invention, the temperature of the hydro-thermal reaction is preferably 150~200 DEG C, and more preferably 160~180 DEG C；It is described
The time of hydro-thermal reaction is preferably 12~36h, more preferably 15~30h, most preferably 20~for 24 hours.
In the present invention, the L-cysteine is as sulphur source, in hydrothermal reaction process, can by partial oxidation indium into
Row is In-situ sulphiding, obtains the porous oxidation indium/indium sulfide heterojunction material with multilevel structure.
Below in conjunction with the embodiment in the present invention, the technical solution in the present invention is clearly and completely described.
Embodiment 1
(1) by 2g In (NO3)3It is dissolved in 100mL deionized water, then adds 5g polyvinylpyrrolidone and (write a Chinese character in simplified form
Precursor solution is obtained with the speed magnetic agitation 8h of 600r/min for PVP).
(2) precursor solution is injected into 5mL centrifuge tube, is dipped vertically into -196 DEG C of liquid nitrogen with certain speed, kept
15min is then transferred into vacuum freeze drier, is -60 DEG C in temperature, and vacuum degree keeps 48h under conditions of being 20Pa, obtains
To porous structure PVP/In (NO3)3Hybrid material.
(3) by PVP/In (NO3)3Hybrid material is placed in Muffle furnace, and whole process heating rate is 1 DEG C/min, by room temperature
300 DEG C are increased to, keeps 1h in air, then 550 DEG C is raised to from 300 DEG C, and keep 2h, is then down to room temperature naturally, obtain
To porous In2O3Material.
(4) L-cysteine of 0.0625mmol is dissolved in 20mL deionized water, the porous In of 20mg is then added2O3,
1h is kept, then mixed solution is transferred in autoclave, then reaction kettle is transferred in baking oven.It is kept at 180 DEG C
For 24 hours, room temperature is reduced to naturally to baking oven.Obtained product deionized water and ethyl alcohol are cleaned for several times, then dried at 60 DEG C
12h obtains multistage porous In2O3/In2S3Hetero-junctions is labeled as In2O3/In2S3-1。
PVP/In (the NO that 1 step of embodiment (2) obtains3)3The scanning electron microscope (SEM) photograph of hybrid material is as shown in Figure 1；Embodiment 1
The porous In that step (3) obtains2O3The scanning electron microscope (SEM) photograph of material is as shown in Figure 2；The porous In that 1 step of embodiment (4) obtains2O3/
In2S3The scanning electron microscope (SEM) photograph of hetero-junctions is as shown in Figure 3.By FIG. 1 to FIG. 3 it is found that the porous In that embodiment 1 obtains2O3/In2S3It is different
The network structure that there is matter knot the duct of interconnection to constitute, it is almost the same with precursor construction, the difference is that there is small time on surface
Level structure, and aperture is slightly reduced.
Embodiment 2
(1) by 2g In (NO3)3It is dissolved in 100mL deionized water with 10g PVP, is stirred with the speed magnetic force of 700r/min
12h is mixed, precursor solution is obtained.
(2) precursor solution is injected into 5mL centrifuge tube, is dipped vertically into -196 DEG C of liquid nitrogen with certain speed, kept
10min is then transferred into vacuum freeze drier, is -70 DEG C in temperature, and vacuum degree keeps 40h under conditions of being 5Pa, obtains
To porous structure PVP/In (NO3)3Hybrid material.
(3) by PVP/In (NO3)3Hybrid material is placed in Muffle furnace, and whole process heating rate is 1 DEG C/min, by room temperature
300 DEG C are increased to, keeps 1h in air, then 550 DEG C is raised to from 300 DEG C, and keep 2h, is then down to room temperature naturally, obtain
To porous In2O3Material.
(4) 0.125mmol L-cysteine is dissolved in 20mL deionized water, the porous In of 20mg is then added2O3, protect
1.5h is held, then mixed solution is transferred in autoclave, then reaction kettle is transferred in baking oven.It is kept at 180 DEG C
For 24 hours, room temperature is reduced to naturally to baking oven.Obtained product deionized water and ethyl alcohol are cleaned for several times, then dried at 80 DEG C
12h obtains the three-dimensional porous In of self-supporting level2O3/In2S3Hetero-junctions is labeled as In2O3/In2S3-2。
PVP/In (the NO that 2 step of embodiment (1) obtains3)3The scanning electron microscope (SEM) photograph of hybrid material is as shown in Figure 4；Embodiment 2
The porous In that step (2) obtains2O3The scanning electron microscope (SEM) photograph of material is as shown in Figure 5；The porous In that 2 step of embodiment (3) obtains2O3/
In2S3The scanning electron microscope (SEM) photograph of hetero-junctions is as shown in Figure 6.By Fig. 4~6 it is found that the porous In that embodiment 2 obtains2O3/In2S3It is heterogeneous
The network structure that there is the duct of interconnection to constitute is tied, almost the same with precursor construction, there is obvious secondary structure on different surfaces,
And aperture is slightly reduced.
Embodiment 3
(1) by 2g In (NO3)3It is dissolved in 100mL deionized water with 20g PVP, is stirred with the speed magnetic force of 800r/min
8h is mixed, precursor solution is obtained.
(2) precursor solution is injected into 5mL centrifuge tube, is dipped vertically into -196 DEG C of liquid nitrogen with certain speed, kept
8min is then transferred into vacuum freeze drier, is -80 DEG C in temperature, and vacuum degree keeps 48h under conditions of being 10Pa, obtains
To porous structure PVP/In (NO3)3Hybrid material.
(3) by PVP/In (NO3)3Hybrid material is placed in Muffle furnace, and whole process heating rate is 1 DEG C/min, by room temperature
300 DEG C are increased to, keeps 1h in air, then 550 DEG C is raised to from 300 DEG C, and keep 2h, is then down to room temperature naturally, obtain
To porous In2O3Material.
(4) 0.25mmol L-cysteine is dissolved in 20mL deionized water, the porous In of 20mg is then added2O3, protect
1.5h is held, then mixed solution is transferred in autoclave, then reaction kettle is transferred in baking oven.It is kept at 180 DEG C
For 24 hours, room temperature is reduced to naturally to baking oven.Obtained product deionized water and ethyl alcohol are cleaned for several times, then dried at 70 DEG C
18h obtains the three-dimensional porous In of self-supporting level2O3/In2S3Hetero-junctions is labeled as In2O3/In2S3-3。
PVP/In (the NO that 3 step of embodiment (1) obtains3)3The scanning electron microscope (SEM) photograph of hybrid material is as shown in Figure 7；Embodiment 3
The porous In that step (2) obtains2O3The scanning electron microscope (SEM) photograph of material is as shown in Figure 8；The porous In that 3 step of embodiment (3) obtains2O3/
In2S3The scanning electron microscope (SEM) photograph of hetero-junctions is as shown in Figure 9.By Fig. 7~9 it is found that the obtained porous In of embodiment 32O3/In2S3It is different
The network structure that there is matter knot the duct of interconnection to constitute, duct is very intensive, and surface has numerous secondary structures to generate.
The porous In that Examples 1 to 3 is prepared2O3/In2S3The specific surface area and porosity of hetero-junctions is as shown in table 1:
The porous In that 1 Examples 1 to 3 of table obtains2O3/In2S3The specific surface area and porosity of hetero-junctions
| Embodiment 1 | Embodiment 2 | Embodiment 3 | |
| Specific surface area m2g-1 | 14.9 | 26.1 | 46.5 |
| Porosity cm3g-1 | 0.05 | 0.17 | 0.29 |
The porous In that Examples 1 to 3 is prepared2O3/In2S3Hetero-junctions carries out XRD test, while making with embodiment 2
Standby obtained porous In2O3Material, In2O3Pdf71-2194 standard card and In2S3Pdf65-0456 standard card compares.As a result
As shown in Figure 10, as shown in Figure 10, Examples 1 to 3 it is obtained be indium oxide and indium sulfide compound.
The porous In that Examples 1 to 3 is prepared2O3/In2S3The UV-Vis DRS map of hetero-junctions is surveyed
Examination, while the porous In being prepared with embodiment 22O3Material compares, and as a result as shown in figure 11, as shown in Figure 11, compares
In porous In2O3Material, porous In2O3/In2S3Obvious red shift occurs for hetero-junctions ABSORPTION EDGE, and it is more to illustrate that the present invention is prepared
Hole In2O3/In2S3Hetero-junctions has expanded In significantly2O3Light absorption range.
The porous In that Examples 1 to 3 is prepared2O3/In2S3The photocatalytic of hetero-junctions can be carried out test, while with
The porous In that embodiment 2 is prepared2O3Material compares.The test method of photocatalysis performance are as follows: (added with 300W xenon lamp
420nm long wave pass filter) it is used as visible light source, it is 10mg/L's that the photochemical catalyst of 30mg, which is added to 30mL volumetric concentration,
In rhodamine B aqueous solution, testing example 1~3 is prepared respectively porous In2O3/In2S3Hetero-junctions catalyst is to dyestuff
The degradation effect of rhodamine B.Test result is as shown in figure 12, wherein C0It is the initial concentration (10mg/L) of rhodamine B solution, C
It is the residual rhodamine B concentration after certain time t, solution relative concentration is defined as C/C0.As shown in Figure 12, the present invention provides
Porous In2O3/In2S3The photocatalysis performance of hetero-junctions is substantially better than porous In2O3Material, in the dark state, the present invention mention
The porous In supplied2O3/In2S3The still degradable rhodamine B of hetero-junctions, and under visible light illumination, the embodiment of the present invention 1~3 mentions
The porous In supplied2O3/In2S3Hetero-junctions is followed successively by 0.007min to the degradation rate of rhodamine B-1、0.095min-1、
0.059min-1, porous In prepared by embodiment 22O3/In2S3Degradation rate is higher.
To sum up, the porous In that the method for the invention is prepared2O3/In2S3Hetero-junctions has preferable catalytic activity,
And preparation method provided by the invention is simple.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of preparation method of porous oxidation indium/indium sulfide heterojunction material, comprising the following steps:
(1) polyvinylpyrrolidone, indium nitrate and water are mixed, obtains precursor solution；
(2) precursor solution that the step (1) obtains successively is subjected to freezing processing and deicing is handled, obtain porous structure
Polyvinylpyrrolidone/indium nitrate hybrid material；
(3) polyvinylpyrrolidone for the porous structure that the step (2) obtains/indium nitrate hybrid material is carried out at calcining
Reason, obtains porous oxidation indium；
(4) after mixing the porous oxidation indium that the step (3) obtains with L-cysteine and water, hydro-thermal reaction is carried out, is obtained
Porous oxidation indium/indium sulfide heterojunction material.
2. preparation method according to claim 1, which is characterized in that polyethylene pyrrole in step (1) precursor solution
The mass concentration of pyrrolidone is 1~20%.
3. preparation method according to claim 1, which is characterized in that indium nitrate in step (1) precursor solution
Mass concentration is 1~10%.
4. preparation method according to claim 1, which is characterized in that in the step (2) temperature of freezing processing be-
196℃。
5. preparation method according to claim 1 or 4, which is characterized in that deicing processing is low in low temperature in the step (2)
It is carried out under the conditions of pressure, the temperature of the deicing processing is -80~-60 DEG C, vacuum degree≤20Pa of the deicing processing.
6. preparation method according to claim 1, which is characterized in that step (3) calcination processing includes successively carrying out
Low temperature calcination processing and high-temperature calcination processing；The temperature of low temperature calcination processing is 150~400 DEG C, the time is 0.5~
2h；The temperature of the high-temperature calcination processing is 500~700 DEG C, and the time is 0.5~3h.
7. preparation method according to claim 6, which is characterized in that the step (3) is warming up to low temperature calcination processing temperature
The heating rate of degree is 0.5~3 DEG C/min；The heating rate for being warming up to high-temperature calcination treatment temperature is 0.5~3 DEG C/min.
8. preparation method according to claim 1, which is characterized in that half Guang of porous oxidation indium and L- in the step (4)
The mass ratio of propylhomoserin is 1:0.38~1.51.
9. preparation method according to claim 1, which is characterized in that the matter of porous oxidation indium and water in the step (4)
Amount is than being 1~5:1.
10. according to claim 1, preparation method described in 8 or 9, which is characterized in that the temperature of step (4) hydro-thermal reaction
It is 150~200 DEG C, the time is 12~36h.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110282653A (en) * | 2019-08-08 | 2019-09-27 | 东北师范大学 | A kind of oxidation phosphide material and preparation method for gas detection |
| CN112264045A (en) * | 2020-12-04 | 2021-01-26 | 福州大学 | One-step synthesis method of one-dimensional indium oxide/indium sulfide composite semiconductor nanofiber |
| CN112588300A (en) * | 2020-12-16 | 2021-04-02 | 江苏大学 | Lattice distortion-based heterojunction photocatalyst and preparation method and application thereof |
| CN113019381A (en) * | 2021-03-03 | 2021-06-25 | 东北师范大学 | Three-dimensional porous self-supporting NiO/ZnO heterojunction material and preparation method thereof |
| CN114534746A (en) * | 2022-02-28 | 2022-05-27 | 浙江理工大学 | Photocatalytic hydrogen production system based on heterojunction photocatalyst and formaldehyde aqueous solution |
| CN114751655A (en) * | 2022-04-20 | 2022-07-15 | 重庆大学 | Indium sulfide-based heterostructure thin film electrode and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090120769A (en) * | 2008-05-20 | 2009-11-25 | 삼성전자주식회사 | Method for synthesis of nano particle using carbene derivative |
| CN102335616A (en) * | 2011-07-21 | 2012-02-01 | 北京工业大学 | Synthesis method of novel visible-light photocatalyst indium sulfide |
| CN104607170A (en) * | 2015-01-06 | 2015-05-13 | 西安理工大学 | Heterostructure material In2O3/In2TiO5, as well as application and preparation method thereof |
| CN105664973A (en) * | 2016-02-26 | 2016-06-15 | 大连理工大学 | Three-dimensional flower-like In2S3/In2O3 composite microsphere photocatalytic material and preparation method thereof |
| CN107140605A (en) * | 2017-06-29 | 2017-09-08 | 东北师范大学 | A kind of porous oxide and preparation method thereof |
| CN107670674A (en) * | 2017-10-12 | 2018-02-09 | 湖南大学 | Indium sulfide material of rare earth element codope and its preparation method and application |
| CN108126689A (en) * | 2017-12-20 | 2018-06-08 | 江苏大学 | A kind of Bi rich in oxygen defect2WO6/In2O3The Preparation method and use of heterojunction composite photocatalyst |
| CN108607580A (en) * | 2018-04-27 | 2018-10-02 | 湖南大学 | Indium sulfide/vanadic acid indium composite photo-catalyst and its preparation method and application |
-
2019
- 2019-05-13 CN CN201910392644.2A patent/CN110038594A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090120769A (en) * | 2008-05-20 | 2009-11-25 | 삼성전자주식회사 | Method for synthesis of nano particle using carbene derivative |
| CN102335616A (en) * | 2011-07-21 | 2012-02-01 | 北京工业大学 | Synthesis method of novel visible-light photocatalyst indium sulfide |
| CN104607170A (en) * | 2015-01-06 | 2015-05-13 | 西安理工大学 | Heterostructure material In2O3/In2TiO5, as well as application and preparation method thereof |
| CN105664973A (en) * | 2016-02-26 | 2016-06-15 | 大连理工大学 | Three-dimensional flower-like In2S3/In2O3 composite microsphere photocatalytic material and preparation method thereof |
| CN107140605A (en) * | 2017-06-29 | 2017-09-08 | 东北师范大学 | A kind of porous oxide and preparation method thereof |
| CN107670674A (en) * | 2017-10-12 | 2018-02-09 | 湖南大学 | Indium sulfide material of rare earth element codope and its preparation method and application |
| CN108126689A (en) * | 2017-12-20 | 2018-06-08 | 江苏大学 | A kind of Bi rich in oxygen defect2WO6/In2O3The Preparation method and use of heterojunction composite photocatalyst |
| CN108607580A (en) * | 2018-04-27 | 2018-10-02 | 湖南大学 | Indium sulfide/vanadic acid indium composite photo-catalyst and its preparation method and application |
Non-Patent Citations (1)
| Title |
|---|
| WEI SUN ET AL.: "Controllable preparation of three-dimensional porous WO3 with enhanced visible light photocatalytic activity via a freeze-drying method", 《JOURNAL OF MATERIALS SCIENCE: MATERIALS IN ELECTRONICS》 * |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110282653A (en) * | 2019-08-08 | 2019-09-27 | 东北师范大学 | A kind of oxidation phosphide material and preparation method for gas detection |
| CN112264045A (en) * | 2020-12-04 | 2021-01-26 | 福州大学 | One-step synthesis method of one-dimensional indium oxide/indium sulfide composite semiconductor nanofiber |
| CN112264045B (en) * | 2020-12-04 | 2021-08-31 | 福州大学 | One-step synthesis method of one-dimensional indium oxide/indium sulfide composite semiconductor nanofiber |
| CN112588300A (en) * | 2020-12-16 | 2021-04-02 | 江苏大学 | Lattice distortion-based heterojunction photocatalyst and preparation method and application thereof |
| CN113019381A (en) * | 2021-03-03 | 2021-06-25 | 东北师范大学 | Three-dimensional porous self-supporting NiO/ZnO heterojunction material and preparation method thereof |
| CN114534746A (en) * | 2022-02-28 | 2022-05-27 | 浙江理工大学 | Photocatalytic hydrogen production system based on heterojunction photocatalyst and formaldehyde aqueous solution |
| CN114534746B (en) * | 2022-02-28 | 2023-12-05 | 浙江理工大学 | Photocatalytic hydrogen production system based on heterojunction photocatalyst and formaldehyde aqueous solution |
| CN114751655A (en) * | 2022-04-20 | 2022-07-15 | 重庆大学 | Indium sulfide-based heterostructure thin film electrode and preparation method thereof |
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