CN119231294A - A dual-wavelength slab laser - Google Patents
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- 238000005086 pumping Methods 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 230000009977 dual effect Effects 0.000 claims description 28
- 230000010355 oscillation Effects 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 description 16
- 238000001816 cooling Methods 0.000 description 10
- 230000017525 heat dissipation Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 230000003595 spectral effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000000295 emission spectrum Methods 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
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Abstract
The application belongs to the technical field of lasers, and relates to a dual-wavelength slab laser which comprises a laser resonant cavity unit and a slab crystal pump unit, wherein the laser resonant cavity unit is provided with a first optical path, a first total reflection mirror, a slab crystal, a first electro-optic Q switch and a first output mirror are sequentially arranged along the first optical path, a second total reflection mirror, a slab crystal, a second electro-optic Q switch and a second output mirror are sequentially arranged along the second optical path, the slab crystal pump unit is side pumping or large-surface pumping, the slab crystal pump unit comprises a semiconductor laser array and an optical waveguide, the slab crystal is trapezoid, the slab crystal is Nd-YAG crystal, and the laser wavelength output by the dual-wavelength slab laser is 1064nm and 1319nm respectively. The dual-wavelength slab laser has the advantages of high pumping power and high beam quality, and achieves the maximum power output.
Description
Technical Field
The invention belongs to the technical field of lasers, and particularly relates to a dual-wavelength slab laser.
Background
YAG crystals were used by the Bayer laboratories, C.G. Betha et al in 1973 to achieve dual wavelength pulsed operation at 1064nm and 1319nm (C.G. Betha, IEEE Journal Quantum Electronics, QE-9, 254 (1973)) in three-mirror collinear cavities containing Q-switches. Thereafter, it has been reported that dual wavelength pulse operation is achieved by using other laser crystals (W. Vollmer,M. G. Knights et al.,Conferences on Laser and Electro-optics, Digest of Technical Papers, 188, 1983, May, 17-21, J. Machan, R. Kurtz et al., Applied Physics Letters, Vol.51, No.17, 1313(1987), V. E. Nadtoncheev, O. E. Nanii, Soviet Journal of Quantum Electronics, Vol.19, No.4, 444(1991)).
At present, people have reached a common consensus on the wide application value of the dual-wavelength laser. For example, in the civil field, the dual wavelength laser can be applied to the directions of laser medicine, high brightness laser color display, laser color printing and the like, in the military field, the dual wavelength laser can be applied to the directions of differential absorption laser radar, and in the laboratory layer, the dual wavelength laser can be applied to the directions of nonlinear frequency conversion, fine laser spectrum, multiphoton distribution ionization of atoms and molecules and the like. It should be noted that solid dual wavelength lasers are of greater research value than gas dual wavelength lasers. In order to obtain stable and larger-energy dual-wavelength laser output in a solid dual-wavelength laser, researchers mainly concentrate research directions on the following three aspects of ① outputting fundamental frequency light and frequency conversion light of the laser operated by fixed wavelength simultaneously, ② realizing dual-wavelength operation through a frequency selective device based on light emitted by a laser of a broadband emission spectrum of a laser medium, and ③ realizing dual-wavelength laser output based on two emission peaks of an emission spectrum of the laser medium. In the above three methods for obtaining dual-wavelength laser output, the first two methods are mature, but the disadvantage is that the dual-wavelength laser output is obtained while other wavelengths are doped, and the energy of the obtained dual-wavelength laser output is lower. The third method for outputting the dual-wavelength laser has the advantages of relatively simple structure, low realization cost, rich wavelength band and potential for further excavation, but has the problems that for Nd: YAG crystals, 1064nm and 1319nm are simultaneously output, ① has poor oscillation effects for inhibiting excessive spectral lines such as 1338nm, ② is difficult to adjust the output power ratio of 1064nm/1319nm dual-wavelength laser, ③ is difficult to control the equal threshold value of 1064nm/1319nm laser and the structural components of the laser are redundant.
Therefore, it is needed to propose a dual-wavelength slab laser to solve the technical problems of suppressing oscillation of redundant spectrum lines such as 1338nm, adjusting the output power ratio of 1064nm/1319nm dual-wavelength laser, controlling the threshold value of 1064nm/1319nm laser to be equal and the redundancy of laser structural devices when the existing dual-wavelength laser output based on two emission peaks of the emission spectrum of the laser medium is realized.
Disclosure of Invention
Aiming at the technical problems of inhibiting the oscillation of redundant spectral lines such as 1338nm, adjusting the output power ratio of 1064nm/1319nm dual-wavelength laser, controlling the equality of threshold values of 1064nm/1319nm laser and the redundancy of laser structural devices when the output of 1064nm/1319nm dual-wavelength laser is realized based on two emission peaks of the emission spectrum of a laser medium in the prior art. Based on the above, the present invention proposes a dual wavelength slab laser to solve at least one of the above technical problems.
In a preferred embodiment of the present invention, there is provided a dual wavelength slab laser comprising a laser cavity unit and a slab crystal pump unit;
The laser resonant cavity unit comprises a first light path, a second light path, a first total reflection mirror, a lath crystal, a first electro-optic Q switch and a first output mirror, wherein the first total reflection mirror, the lath crystal, the first electro-optic Q switch and the first output mirror are sequentially arranged along the first light path;
the slab crystal pump unit is side pumping or large-surface pumping and comprises a semiconductor laser array and an optical waveguide;
The light-passing apertures of the first electro-optical Q switch and the second electro-optical Q switch are respectively matched with the diameters of the laser received by the first electro-optical Q switch and the second electro-optical Q switch; the first total reflection mirror and the first output mirror have the same central wavelength of the coating film, and the second total reflection mirror and the second output mirror have the same central wavelength of the coating film, wherein the central wavelengths of the coating film of the first total reflection mirror and the first output mirror and the central wavelengths of the coating film of the second total reflection mirror and the second output mirror respectively correspond to the wavelengths of two absorption peaks with the largest absorption section and the second largest absorption peak of the lath crystal;
the lath crystal is trapezoid in shape, and is Nd: YAG crystal;
The laser of the first optical path and the laser of the second optical path simultaneously complete oscillation along a first direction and conduction along a second direction in the slab crystal;
The laser wavelengths output by the dual-wavelength slab laser are 1064nm and 1319nm respectively.
Preferably, the semiconductor laser array is a laser diode array.
Preferably, the slab crystal pump unit is a double sided side pump.
Preferably, the lath crystal is trapezoid in shape, the lath crystal is a Nd-YAG crystal, the lower bottom of the Nd-YAG crystal is 61.2mm, the upper bottom of the Nd-YAG crystal is 59mm, the width of the Nd-YAG crystal is 10mm, the thickness of the Nd-YAG crystal is 2mm, the base angle of the Nd-YAG crystal is 29.2 degrees, the first direction is the height direction of the lath crystal, the second direction is the length direction of the lath crystal, and the first direction is perpendicular to the second direction.
Preferably, the slab crystal has a length such that dual wavelength light is capable of achieving an integer period of oscillation in the slab crystal.
Preferably, the heat dissipation mode of the lath crystal is water-cooling heat dissipation.
Preferably, the first electro-optic Q-switch is selected from KD 2PO4 crystals.
Preferably, the second electro-optical Q-switch is selected from LiNbO 3 crystals.
Preferably, the first total reflection mirror coating is 0 DEG HR@1064nm, and the first output mirror coating wavelength T=55% @1064nm.
Preferably, the second total reflection mirror coating is 0 DEG HR@1319nm, and the second output mirror coating wavelength T=15% @1319nm & AR@1064nm.
Compared with the prior art, the invention can bring at least one of the following beneficial effects:
1) The dual-wavelength slab laser adopts a dual-wavelength oscillation starting resonant cavity type, two different oscillation periods are formed through dual wavelengths, and the oscillation periods are all respective integer times of the dual-wavelength light, so that upper energy level particles in slab crystals are fully extracted.
2) The dual-wavelength slab laser provided by the application utilizes the advantages of high pumping power and high beam quality of the slab laser, and reaches the maximum power output, so that the laser has more application scenes, and the applicability of the laser is widened.
3) The dual-wavelength slab laser provided by the application suppresses oscillation interference of redundant spectral lines by selecting the first electro-optical Q switch from KD 2PO4 crystals and the second electro-optical Q switch from LiNbO 3 crystals.
Drawings
The above features, technical features, advantages and implementation thereof will be further described in the following detailed description of preferred embodiments with reference to the accompanying drawings in a clearly understandable manner.
FIG. 1 is a side view of a single side large pump of the dual wavelength slab laser of embodiment 1 of the present invention;
FIG. 2 is a top view of the dual wavelength slab laser slab crystal double sided side pumping of embodiment 2 of the present invention;
FIG. 3 is a top view of the dual wavelength slab laser slab crystal single side pump of embodiment 3 of the present invention;
FIG. 4 is a schematic diagram of the same-path oscillation optical path of the dual-wavelength slab laser according to embodiment 3 of the present invention;
Fig. 5 is a schematic diagram of the same-path different-cavity-length oscillation optical path of the dual-wavelength slab laser according to embodiment 4 of the present invention.
Detailed Description
Various aspects of the invention are described in further detail below.
Unless defined or otherwise indicated, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. In addition, any method and material similar or equivalent to those described may be used in the methods of the present invention.
The term "or" as used herein includes the relationship of "and" unless specifically stated and defined otherwise. The sum corresponds to the boolean logic operator AND, the OR corresponds to the boolean logic operator OR, AND the AND is a subset of OR.
It will be understood that, although the terms "first," "second," etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. Thus, a first element could be termed a second element without departing from the teachings of the present inventive concept.
In the present invention, the terms "consisting essentially of" and "consisting of" are included in the terms "containing," comprising, "or" including.
The terms "connected," "connected," and "connected" in this application are to be construed broadly, as they are, for example, fixedly connected or via an intermediary, in connection with one another, or in connection with one another, as they are in communication with one another, or in an interaction relationship between two elements, unless otherwise specifically indicated and defined. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
For example, if an element (or component) is referred to as being "on", "coupled" or "connected" to another element, it can be directly on, coupled or connected to the other element or one or more intervening elements may be present therebetween. Conversely, if the expressions "directly on," "directly with," coupled "and" directly with, "connected" are used herein, then no intervening elements are indicated. Other words used to describe the relationship between elements should be interpreted similarly, such as "between" and "directly between", "attached" and "directly attached", "adjacent" and "directly adjacent", and the like.
It should be further noted that the words "front", "rear", "left", "right", "upper" and "lower" used in the following description refer to directions in the drawings. The words "inner" and "outer" are used to refer to directions toward or away from, respectively, the geometric center of a particular component. It will be understood that these terms are used herein to describe one element, layer or region's relationship to another element, layer or region as illustrated in the figures. These terms should also encompass other orientations of the device in addition to the orientation depicted in the figures.
Other aspects of the invention will be apparent to those skilled in the art in view of the disclosure herein.
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following description will explain the specific embodiments of the present invention with reference to the accompanying drawings. It is evident that the drawings in the following description are only examples of the invention, from which other drawings and other embodiments can be obtained by a person skilled in the art without inventive effort.
It should also be noted that the illustrations provided in the following embodiments merely illustrate the basic concept of the present application by way of illustration, and only the components related to the present application are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated. For example, the thickness of elements in the drawings may be exaggerated for clarity.
Referring to fig. 1-5, in a preferred embodiment of the present invention, a dual wavelength slab laser is provided that includes a laser cavity unit and a slab crystal pump unit;
The laser resonant cavity unit comprises a first light path, a second light path, a first total reflection mirror 5, a lath crystal 2, a second electro-optical Q switch 6 and a second output mirror 7, wherein the first total reflection mirror 1, the lath crystal 2, the first electro-optical Q switch 3 and the first output mirror 4 are sequentially arranged along the first light path;
The slab crystal pump unit comprises a semiconductor laser array 9 and an optical waveguide 8, wherein,
The light transmission apertures of the first electro-optical Q switch 3 and the second electro-optical Q switch 6 are respectively matched with the laser diameters received by the first electro-optical Q switch 3 and the second electro-optical Q switch 6, the film plating center wavelengths of the first total reflection mirror 1 and the first output mirror 4 are the same, the film plating center wavelengths of the second total reflection mirror 5 and the second output mirror 7 are the same, and the film plating center wavelengths of the first total reflection mirror 1 and the first output mirror 4 and the film plating center wavelengths of the second total reflection mirror 5 and the second output mirror 7 are respectively corresponding to the wavelengths of two absorption peaks with the largest absorption section and the second absorption peak of the lath crystal 2;
the shape of the lath crystal 2 is trapezoid, and the lath crystal 2 is Nd-YAG crystal;
The laser of the first optical path and the laser of the second optical path simultaneously complete oscillation along a first direction and conduction along a second direction in the slab crystal;
The laser wavelengths output by the dual-wavelength slab laser are 1064nm and 1319nm respectively.
It should be noted that, the dual-wavelength slab laser has a simple structure, does not adopt a large number of redundant optical devices, and reduces the production and manufacturing costs. In addition, the center wavelengths of the films of the first total reflection mirror 1 and the first output mirror 4 and the center wavelengths of the films of the second total reflection mirror 5 and the second output mirror 7 correspond to the wavelengths of the two absorption peaks with the largest absorption cross section and the second largest absorption cross section of the slab crystal 2, respectively, and the wavelengths with the largest absorption cross section and the second largest absorption cross section are selected as the oscillation wavelengths of the first optical path and the second optical path, and are also used as the center wavelengths of the films of the first total reflection mirror 1, the first output mirror 4, the second total reflection mirror 5 and the second output mirror 7 on the first optical path. And the light-transmitting apertures of the first electro-optical Q switch 3 and the second electro-optical Q switch 6 are respectively matched with the diameters of the lasers received by the first electro-optical Q switch 3 and the second electro-optical Q switch 6, so that the best Q-switching efficiency can be obtained.
As a preferred embodiment, the heat dissipation mode of the slab crystal 2 is water cooling heat dissipation.
The separation of the pumping surface and the cooling surface is realized by adopting a cooling mode of water cooling and heat dissipation, so that the design of the laser head is simplified.
As a preferred embodiment, the slab crystal pump unit is side-pumped or bulk-pumped.
It should be noted that the large-area pump has more energy to inject, and is more suitable for a high-power solid dual-wavelength laser.
As a preferred embodiment, the slab crystal pump unit is a double sided side pump.
It should be noted that, the double-sided side pumping, the pump light is injected from another plane perpendicular to the cooling surface and the laser propagation plane, which increases the absorption length of the pump light and improves the utilization rate.
As a preferred embodiment, the semiconductor laser array 9 is a laser diode array.
In a preferred embodiment, the slab crystal 2 has a trapezoid shape, the slab crystal 2 is a Nd-YAG crystal, the lower bottom of the Nd-YAG crystal is 61.2mm, the upper bottom of the Nd-YAG crystal is 59mm, the width of the Nd-YAG crystal is 10mm, the thickness of the Nd-YAG crystal is 2mm, the base angle of the Nd-YAG crystal is 29.2 °, the first direction is the height direction of the slab crystal 2, the second direction is the length direction of the slab crystal 2, and the first direction is perpendicular to the second direction. It should be noted that, the first direction is the Z direction, the second direction is the Y direction, the length of the slab crystal 2 along the Z direction satisfies that two oscillation wavelengths of the dual-wavelength laser of the first optical path and the second optical path can both complete conduction of the complete cycle number, and the dual-wavelength laser oscillates in the Y direction of the slab crystal 2.
As a preferred embodiment, the first electro-optical Q-switch 3 is selected from KD 2PO4 crystals, which arrangement suppresses to some extent the light of unwanted spectral lines.
As a preferred embodiment, the second electro-optical Q-switch 6 is selected from LiNbO 3 crystals, which arrangement suppresses to some extent the light of unwanted spectral lines.
Example 1
Referring to fig. 1, the present invention provides a dual wavelength slab laser, wherein the slab crystal 2 is a Nd-YAG crystal having a doping concentration of 1%, the lower bottom of the Nd-YAG crystal is 61.2mm, the upper bottom of the Nd-YAG crystal is 59mm, the width of the Nd-YAG crystal is 10mm, the thickness of the Nd-YAG crystal is 2mm, and the base angle of the Nd-YAG crystal is 29.2 °. The second electro-optical Q switch 6 is selected from LiNbO 3 crystal, the absorption coefficient of the second electro-optical Q switch to 1319nm wave band is much smaller than that of KD 2PO4 crystal, the transmittance of the second electro-optical Q switch to 1319nm wave band is higher than 98% after film plating, the insertion loss is not more than 1%, and the second electro-optical Q switch is more favorable for the vibration starting of 1319nm laser. The first electro-optical Q-switch 3 is selected from KD 2PO4 crystals, which KD 2PO4 crystals have a high electro-optic coefficient, and in this embodiment are used for electro-optical Q-switching of a 1064nm laser path. The semiconductor laser array 9 is adopted to carry out single-sided large-surface pumping, the light spot size is 55mm multiplied by 9mm after being shaped by the waveguide 8, the light spot size is uniformly irradiated on the large surface of the Nd-YAG crystal, and a water cooling heat dissipation unit is welded on the large surface of the other side opposite to the pump unit. In the optical path of the embodiment, 1064nm wavelength adopts a straight-through cavity structure to transmit along a first optical path through a resonant cavity optical path formed by the first total reflection mirror 1, the slab crystal 2, the first electro-optical Q switch 3 and the first output mirror 4, and since the emission section of the Nd: YAG crystal in the 1064nm wave band is maximum, the output power of 1064nm laser is relatively high, in the embodiment, the 1064nm wavelength light has 4 complete oscillation periods in the slab crystal 2, 1319nm laser propagates along a second optical path through the second total reflection mirror 5, the slab crystal 2, the second electro-optical Q switch 6 and the second output mirror 7, the 1319nm laser enters the Nd: YAG crystal along an included angle of 46.6 degrees with the incidence plane of the slab, oscillates along the Y axis and propagates along the Z axis in the Nd: YAG crystal, and 8 complete oscillation periods exist.
The 1319nm wavelength oscillation period in the Nd-YAG crystal is twice of the 1064nm wavelength period, the output power is also improved, the power difference of the dual-wavelength output power is further reduced, and the purposes of controlling and adjusting the 1064nm/1319nm dual-wavelength laser output power ratio and controlling and adjusting the threshold value of 1064nm/1319nm laser are achieved.
Example 2
Referring to fig. 2, the invention provides a dual-wavelength slab laser, a slab crystal 2 adopts two semiconductor laser arrays 9 to carry out double-side pumping, the spot size is 9mm multiplied by 1.5mm after shaping by a waveguide 8, and the beam is uniformly irradiated on the side surface of the slab crystal 2. In this scheme, water-cooling heat dissipation units are welded on two large faces of the lath-shaped crystal to dissipate heat, and all other reference is made to embodiment 1.
Example 3
Referring to fig. 3-4, the invention provides a dual-wavelength slab laser, wherein a slab crystal 2 is a Nd-YAG trapezoid crystal, the doping concentration is 1%, the base angle is 29.2 degrees, the length of the slab crystal 2 satisfies that the propagation of dual-wavelength light in the crystal is an integer multiple period, and a water cooling heat dissipation mode is selected for heat dissipation of the slab crystal 2. The first electro-optical Q switch 3 and the second electro-optical Q switch 6 are combined into one electro-optical Q switch, liNbO 3 crystals are selected as the electro-optical Q switch, the transmission wavelength of the electro-optical Q switch comprises 1064nm and 1319nm, the absorption coefficient of the electro-optical Q switch to the 1319nm wave band is much smaller than that of KD 2PO4 crystals, the transmittance of the electro-optical Q switch to the 1319nm wave band after film plating is higher than 98%, the insertion loss of the electro-optical Q switch is not more than 1%, the electro-optical Q switch is more favorable for starting oscillation of 1319nm laser and compatible with 1064nm output. The total reflection mirror and the output mirror can be coated with films at two wavelengths, so that 1064 and 1319nm can oscillate in the same path and output simultaneously. The other parts are referred to example 1.
Example 4
Referring to fig. 5, the invention provides a dual-wavelength slab laser, wherein a slab crystal 2 is a Nd: YAG trapezoid crystal, the doping concentration is 1%, the base angle is 29.2 degrees, the length of the slab crystal 2 satisfies that dual-wavelength light propagates in the crystal in an integer multiple period, and a water cooling heat dissipation mode is selected for the slab crystal. The first electro-optical Q switch 3 and the second electro-optical Q switch 6 are combined into one electro-optical Q switch, liNbO 3 crystals are selected as the electro-optical Q switch, the transmission wavelength of the electro-optical Q switch comprises 1064nm and 1319nm, the absorption coefficient of the electro-optical Q switch to the 1319nm wave band is much smaller than that of KD 2PO4 crystals, the transmission rate of the electro-optical Q switch to the 1319nm wave band after film coating is higher than 98%, the insertion loss of the electro-optical Q switch is not higher than 1%, the electro-optical Q switch is more favorable for starting up 1319nm laser and compatible with 1064nm output. The first total reflection mirror 1 is coated with a film at an angle of 0 ℃ HR@1064nm, the first output mirror 4 is coated with a film at a wavelength of T=55% @1064nm, the second total reflection mirror 5 is coated with a film at an angle of 0 ℃ HR@1319nm, and the second output mirror 7 is coated with a film at a wavelength of T=15% @1319nm & AR@1064nm. The laser wavelengths of 1064nm and 1319nm are different, so that the power of the output laser with the two wavelengths can be adjusted.
Based on the present disclosure, one skilled in the art will appreciate that one aspect described herein may be implemented independently of any other aspect, and that two or more of these aspects may be combined in various ways. For example, apparatus may be implemented and/or methods practiced using any number and aspects set forth herein. In addition, such apparatus may be implemented and/or such methods practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
It should be noted that the above embodiments can be freely combined as needed. The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
All documents mentioned in this disclosure are incorporated by reference in this disclosure as if each were individually incorporated by reference. Further, it is understood that various changes and modifications of the present application may be made by those skilled in the art after reading the above description of the application, and such equivalents are intended to fall within the scope of the application as defined in the appended claims.
Claims (10)
1. A dual wavelength slab laser, characterized in that the dual wavelength slab laser comprises a laser resonator unit and a slab crystal pump unit;
The laser resonant cavity unit comprises a first light path, a second light path, a first total reflection mirror, a lath crystal, a first electro-optic Q switch and a first output mirror, wherein the first total reflection mirror, the lath crystal, the first electro-optic Q switch and the first output mirror are sequentially arranged along the first light path;
The slab crystal pump unit is side pumping or large-surface pumping, comprises a semiconductor laser array and an optical waveguide, wherein,
The first electro-optical Q switch and the second electro-optical Q switch are respectively matched with the laser diameters received by the first electro-optical Q switch and the second electro-optical Q switch, the plating center wavelengths of the first total reflection mirror and the first output mirror are the same, and the plating center wavelengths of the second total reflection mirror and the second output mirror are the same;
the lath crystal is trapezoid in shape, and is Nd: YAG crystal;
The laser of the first optical path and the laser of the second optical path simultaneously complete oscillation along a first direction and conduction along a second direction in the slab crystal;
The laser wavelengths output by the dual-wavelength slab laser are 1064nm and 1319nm respectively.
2. The dual wavelength slab laser of claim 1, wherein the semiconductor laser array is a laser diode array.
3. The dual wavelength slab laser of claim 1, wherein the slab crystal pump unit is a double sided side pump.
4. The dual wavelength slab laser of claim 1, wherein the slab crystal is trapezoidal in shape, the slab crystal is a Nd-YAG crystal, a lower bottom of the Nd-YAG crystal is 61.2mm, an upper bottom of the Nd-YAG crystal is 59mm, a width of the Nd-YAG crystal is 10mm, a thickness of the Nd-YAG crystal is 2mm, a base angle of the Nd-YAG crystal is 29.2 °, the first direction is a height direction of the slab crystal, the second direction is a length direction of the slab crystal, and the first direction is perpendicular to the second direction.
5. The dual wavelength slab laser of claim 4, wherein the slab crystal has a length that allows the dual wavelength light to oscillate through the slab crystal for an integer period.
6. The dual wavelength slab laser of claim 5, wherein the slab crystal dissipates heat in a water cooled manner.
7. The dual wavelength slab laser of claim 6, wherein the first electro-optical Q-switch is selected from KD 2PO4 crystals.
8. The dual wavelength slab laser of claim 7, wherein the second electro-optical Q-switch is selected from LiNbO 3 crystals.
9. The dual wavelength slab laser of claim 5, wherein the first total reflection mirror coating is 0 hr@1064nm and the first output mirror coating wavelength T = 55% @1064nm.
10. The dual wavelength slab laser of claim 5, wherein the second total reflection mirror coating is 0 ° hr@1319nm and the second output mirror coating wavelength T = 15% @1319nm & ar@1064nm.
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| CN114204394A (en) * | 2021-11-03 | 2022-03-18 | 中国科学院微电子研究所 | Orthogonal polarization dual-wavelength laser with adjustable proportion |
| CN116742457A (en) * | 2023-06-20 | 2023-09-12 | 北京中星时代科技有限公司 | LD symmetrical side pump module and laser |
| CN220249236U (en) * | 2023-07-13 | 2023-12-26 | 山东迪浩耐磨管道股份有限公司 | High-pressure primary-secondary sealing flange connecting mechanism for steel-plastic composite pipeline |
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| CN114204394A (en) * | 2021-11-03 | 2022-03-18 | 中国科学院微电子研究所 | Orthogonal polarization dual-wavelength laser with adjustable proportion |
| CN116742457A (en) * | 2023-06-20 | 2023-09-12 | 北京中星时代科技有限公司 | LD symmetrical side pump module and laser |
| CN220249236U (en) * | 2023-07-13 | 2023-12-26 | 山东迪浩耐磨管道股份有限公司 | High-pressure primary-secondary sealing flange connecting mechanism for steel-plastic composite pipeline |
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