CN118483628B - Magneto-sensitive element, preparation method thereof, magneto-sensitive sensor, electronic device, chip and electronic equipment - Google Patents
Magneto-sensitive element, preparation method thereof, magneto-sensitive sensor, electronic device, chip and electronic equipment Download PDFInfo
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- G01R33/0017—Means for compensating offset magnetic fields or the magnetic flux to be measured; Means for generating calibration magnetic fields
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
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- G—PHYSICS
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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Abstract
The disclosure relates to the technical field of magnetic sensing, in particular to a magnetic sensor, a preparation method thereof, a magnetic sensor, an electronic device, a chip and electronic equipment. The magneto-sensitive element includes: the device comprises a substrate, an active region, an excitation electrode and a magnetic deflection current detection electrode; the substrate is positioned at the bottommost layer; the active region is formed on the substrate; the active region is a comb-like structure comprising a comb spine and a plurality of comb teeth extending from one or more sides of the comb spine; the excitation electrode is arranged on or around the comb ridge, forms electrical contact with the comb ridge, is connected with an external power supply through a wire and is used for applying excitation current to the magneto-sensitive element; the magnetic deflection current detection electrodes are arranged on two sides of the comb teeth and are used for detecting current changes generated after the excitation current is deflected due to the action of a magnetic field. The magneto-dependent sensor comprises the magneto-dependent element and measures the magnetic field by means of the current change generated by the excitation current, thereby increasing the sensitivity of the sensor.
Description
Technical Field
The disclosure relates to the technical field of magnetic sensing, in particular to a magnetic sensor, a preparation method thereof, a magnetic sensor, an electronic device, a chip and electronic equipment.
Background
A hall sensor is a magnetic sensor that can be used to measure a magnetic field by measuring a hall voltage generated in a hall device by an external magnetic field using a hall effect in a semiconductor. Because the Hall sensor has a simple structure, in particular to a silicon-based Hall sensor which can be integrated with a conditioning circuit IC at the rear end in a single-chip manner, the cost of the Hall sensor can be very low, and the Hall sensor can be widely applied to the aspects of magnetic field measurement, position measurement and the like.
In the prior art, when a magnetic field is measured by a hall sensor, carriers contained in a hall element of the hall sensor are caused to flow in a certain direction by applying a voltage or current excitation to the hall sensor, and when a magnetic field perpendicular to the surface of the hall element is applied again, the carriers flowing in the certain direction are deflected by lorentz force, and when an equilibrium state is reached, a pressure difference proportional to the magnetic field intensity is generated between both sides of the hall sensor, which is called hall voltage, and thus the value of the magnetic field intensity can be obtained by measuring the hall voltage.
However, because the hall voltage generated by the hall sensor under the action of the magnetic field is relatively small, the hall voltage needs to be amplified, filtered and offset and temperature drift compensated in practical application. Even so, the sensitivity of hall sensors, especially silicon-based hall sensors, is relatively small, and hall sensors also have relatively large 1/f noise and zero offset. For the reasons, the accuracy of the Hall sensor cannot be high, so that the application scene of the Hall sensor is greatly limited.
How to improve the sensitivity of the sensor, thereby improving the measurement accuracy of the sensor in a measurement application scene is a problem to be solved urgently.
Disclosure of Invention
In order to solve the problems in the related art, embodiments of the present disclosure provide a magneto-sensitive element, a method of manufacturing the same, a magneto-sensitive sensor, an electronic device, a chip, and an electronic apparatus.
In a first aspect, embodiments of the present disclosure provide a magneto-sensitive element, the magneto-sensitive element comprising: the device comprises a substrate, an active region, an excitation electrode and a magnetic deflection current detection electrode;
the substrate is positioned at the bottommost layer;
The active region is formed on the substrate; the active area is in a comb-shaped structure, and the comb-shaped structure comprises a comb ridge and a plurality of comb teeth, wherein the plurality of comb teeth extend out from one side or multiple sides of the comb ridge;
The excitation electrode is arranged on the comb ridge or at the periphery of the comb ridge, is in electrical contact with the comb ridge, is connected with an external power supply through a wire and is used for applying excitation current to the magneto-sensitive element;
The magnetic deflection current detection electrodes are arranged on two sides of the comb teeth and are used for detecting current changes generated after the excitation current is deflected due to the action of a magnetic field.
According to an embodiment of the present disclosure, the magnetic deflection current detection electrode includes a magnetic deflection current detection positive electrode and a magnetic deflection current detection negative electrode, the magnetic deflection current detection electrode being disposed at both sides of the comb teeth, including:
The magnetic deflection current detection positive electrodes are arranged on the first sides of the comb teeth, the magnetic deflection current detection negative electrodes are arranged on the second sides of the comb teeth, and the magnetic deflection current detection positive electrodes are connected with each other and the magnetic deflection current detection negative electrodes are connected with an external current measurement circuit through wires.
According to an embodiment of the present disclosure, the magnetic deflection current detection electrodes are plural, and each magnetic deflection current detection electrode is equal in size.
In accordance with an embodiment of the present disclosure,
The excitation electrode electrically contacts the entire periphery of the comb spine, or
The excitation electrode is arranged at the center of the comb ridge, or
The exciting electrode is arranged at the periphery of the comb ridge or the position, close to the edge of the comb ridge, of the opposite side edge of each comb tooth, and the center line of the exciting electrode coincides with the center line of the opposite side edge.
According to an embodiment of the present disclosure, the comb structure is a symmetrical comb structure.
According to an embodiment of the present disclosure, the symmetrical comb structure comprises an axisymmetrical comb structure and/or a rotationally symmetrical comb structure, the axisymmetrical comb structure comprising: rectangular symmetrical comb structure; the rotationally symmetrical comb structure comprises: an annular symmetrical comb structure, a circular symmetrical comb structure or a regular polygon symmetrical comb structure.
According to an embodiment of the present disclosure, the size and spacing of the teeth of the comb structure are equal.
According to an embodiment of the disclosure, the substrate is a semiconductor substrate, the substrate being of opposite doping type to the active region.
According to an embodiment of the present disclosure, the length dimension of the comb ridge in the comb tooth arrangement direction is greater than 3 times the width dimension of the comb ridge.
In a second aspect, in an embodiment of the present disclosure, there is provided a magneto-dependent sensor, including:
a magneto-sensitive element according to any one of the first aspects; and
And the excitation current deflection measurement module is connected with the magnetic deflection current detection electrode of the magnetic sensor and is used for measuring the deflection amount of the excitation current after the excitation current is deflected by the magnetic deflection current detection electrode when the excitation current is applied to the active area of the magnetic sensor through the excitation electrode of the magnetic sensor and a magnetic field perpendicular to the upper plane of the active area exists.
According to an embodiment of the present disclosure, the magneto-dependent sensor further comprises: the magnetic field measurement module is connected with the excitation current deflection measurement module;
The magnetic field measurement module is configured to measure the magnetic field based on a deflection amount of the excitation current.
According to an embodiment of the present disclosure, the measuring of the deflection amount of the excitation current after the excitation current is deflected using the magnetic deflection current detection electrode includes:
Detecting a first deflection current value by using a magnetic deflection current detection positive electrode of the magnetic sensor;
detecting a second deflection current value by using a magnetic deflection current detection negative electrode of the magneto-sensitive element;
determining a deflection amount of the excitation current according to the first deflection current value and the second deflection current value; wherein the deflection amount of the excitation current is a difference value between the first deflection current value and the second deflection current value;
said measuring said magnetic field as a function of the deflection of said excitation current, comprising:
the strength of the magnetic field is measured from the difference between the first deflection current value and the second deflection current value.
According to an embodiment of the present disclosure, the strength of the magnetic field is linearly related to the deflection amount of the excitation current, the measuring the magnetic field according to the deflection amount of the excitation current includes:
determining a linear proportionality coefficient according to the sensitivity coefficient of the magneto-sensitive element and the current value of the excitation current;
The strength of the magnetic field is determined from the linear scaling factor and the deflection of the excitation current.
According to an embodiment of the present disclosure, the determining a linear scaling factor from a sensitivity factor of the magneto-sensitive element and a current value of the excitation current includes:
determining the linear scaling factor according to the formula ：
Wherein, Representing the sensitivity coefficient of the magneto-sensitive element,A current value representing the excitation current.
According to an embodiment of the present disclosure, the determining the strength of the magnetic field according to the linear scaling factor and the deflection amount of the excitation current includes:
determining the strength of the magnetic field according to the following formula ：
Wherein, Representing the deflection of the excitation current.
According to an embodiment of the present disclosure, when an excitation current is applied to the active region through the excitation electrode, a constant current source is used for power supply.
In a third aspect, embodiments of the present disclosure provide a method for preparing a magneto-sensitive element, where the method includes:
providing a substrate, wherein the substrate is positioned at the bottommost layer;
Forming an active region on the substrate; the active area is in a comb-shaped structure, and the comb-shaped structure comprises a comb ridge and a plurality of comb teeth, wherein the plurality of comb teeth extend out from one side or multiple sides of the comb ridge;
forming an excitation electrode; the excitation electrode is arranged on the comb ridge or at the periphery of the comb ridge, is in electrical contact with the comb ridge, is connected with an external power supply through a wire and is used for applying excitation current to the magneto-sensitive element;
Forming a magnetic deflection current detection electrode; the magnetic deflection current detection electrodes are arranged on two sides of the comb teeth and are used for detecting current changes generated after the excitation current is deflected due to the action of a magnetic field.
According to an embodiment of the present disclosure, the magnetic deflection current detection electrode includes a magnetic deflection current detection positive electrode and a magnetic deflection current detection negative electrode, the magnetic deflection current detection electrode being disposed at both sides of the comb teeth, including:
The magnetic deflection current detection positive electrodes are arranged on the first sides of the comb teeth, the magnetic deflection current detection negative electrodes are arranged on the second sides of the comb teeth, and the magnetic deflection current detection positive electrodes are connected with each other and the magnetic deflection current detection negative electrodes are connected with an external current measurement circuit through wires.
According to an embodiment of the present disclosure, the magnetic deflection current detection electrodes are plural, and each magnetic deflection current detection electrode is equal in size.
In accordance with an embodiment of the present disclosure,
The excitation electrode electrically contacts the entire periphery of the comb spine, or
The excitation electrode is arranged at the center of the comb ridge, or
The exciting electrode is arranged at the periphery of the comb ridge or the position, close to the edge of the comb ridge, of the opposite side edge of each comb tooth, and the center line of the exciting electrode coincides with the center line of the opposite side edge.
According to an embodiment of the present disclosure, the comb structure is a symmetrical comb structure.
In accordance with an embodiment of the present disclosure,
The symmetrical comb structure comprises an axisymmetrical comb structure and/or a rotationally symmetrical comb structure, the axisymmetrical comb structure comprising: rectangular symmetrical comb structure; the rotationally symmetrical comb structure comprises: an annular symmetrical comb structure, a circular symmetrical comb structure or a regular polygon symmetrical comb structure.
According to an embodiment of the present disclosure, the size and spacing of the teeth of the comb structure are equal.
According to an embodiment of the disclosure, the substrate is a semiconductor substrate, the substrate being of opposite doping type to the active region.
In accordance with an embodiment of the present disclosure,
The length dimension of the comb ridge in the comb tooth arrangement direction is larger than 3 times of the width dimension of the comb ridge.
In a fourth aspect, embodiments of the present disclosure provide an electronic device comprising a magneto-sensitive element according to any one of the first aspects.
In a fifth aspect, embodiments of the present disclosure provide a chip comprising a magneto-sensitive element according to any one of the first aspects.
In a sixth aspect, embodiments of the present disclosure provide a chip including the magneto-sensitive sensor of the second aspect.
In a seventh aspect, an embodiment of the disclosure provides an electronic device, including a magneto-sensitive element according to any one of the first aspects.
In an eighth aspect, in an embodiment of the disclosure, an electronic device includes the magneto-sensitive sensor of the second aspect.
According to the technical scheme provided by the embodiment of the disclosure, the excitation electrode, the magnetic deflection current detection electrode and the active area with the comb-shaped structure are formed in the magneto-dependent sensor, then excitation current is applied to the active area through the excitation electrode, the excitation current deflects under the action of a magnetic field, the deflection quantity of the excitation current after deflection is detected through the magnetic deflection current detection electrode by utilizing the current magnetic deflection effect, and finally magnetic field measurement is performed according to the deflection quantity of the excitation current because the deflection quantity is related to the intensity of the magnetic field, so that the sensitivity of the sensor is improved, and the measurement accuracy of the sensor in a measurement application scene is improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
Other features, objects and advantages of the present disclosure will become more apparent from the following detailed description of non-limiting embodiments, taken in conjunction with the accompanying drawings. In the drawings:
FIG. 1 shows a schematic diagram of a magnetic sensor in accordance with an embodiment of the present disclosure;
FIG. 2 shows a schematic diagram of another magnetic sensor in accordance with an embodiment of the present disclosure;
FIG. 3 shows a schematic diagram of a structure of a magneto-sensitive element in a top view according to an embodiment of the present disclosure;
FIG. 4 illustrates a schematic diagram of another magnetic sensor in a top view according to an embodiment of the present disclosure;
FIG. 5 shows a schematic diagram of a structure of a further magnetic sensor in a top view according to an embodiment of the present disclosure;
FIG. 6 shows a schematic diagram of a structure of a further magnetic sensor in a top view according to an embodiment of the present disclosure;
FIG. 7 illustrates a schematic structural diagram of a magneto-dependent sensor according to an embodiment of the present disclosure;
FIG. 8 illustrates a schematic diagram of a structure of another magneto-dependent sensor according to an embodiment of the present disclosure;
fig. 9 shows a flow chart of a method of fabricating a magneto-sensitive element according to an embodiment of the present disclosure.
Detailed Description
Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily implement them. In addition, for the sake of clarity, portions irrelevant to description of the exemplary embodiments are omitted in the drawings.
In this disclosure, it should be understood that terms such as "comprises" or "comprising," etc., are intended to indicate the presence of features, numbers, steps, acts, components, portions, or combinations thereof disclosed in this specification, and are not intended to exclude the possibility that one or more other features, numbers, steps, acts, components, portions, or combinations thereof are present or added.
In addition, it should be noted that, without conflict, the embodiments of the present disclosure and features of the embodiments may be combined with each other. The present disclosure will be described in detail below with reference to the accompanying drawings in conjunction with embodiments.
As described above, in the related art, the position, the magnetic field, and the like are measured mainly by the hall voltage output from the hall sensor. However, since the hall voltage generated by the hall sensor under the action of the magnetic field is relatively small, the hall voltage signal needs to be amplified and filtered by adopting an amplifying circuit and a filtering circuit, and when the hall voltage signal is amplified and filtered by using the amplifying circuit and the filtering circuit, problems such as noise amplification, nonlinear distortion, offset error and the like may be introduced, so that the measurement accuracy is affected. Even if the problems caused by the amplifying circuit and the filter circuit are ignored, the sensitivity of the Hall sensor, especially the silicon-based Hall sensor, is relatively small in terms of sensitivity, and the Hall sensor also has relatively large 1/f noise and zero offset, so that the precision of the Hall sensor cannot be very high due to the reasons, and the application scene of the Hall sensor is greatly limited.
How does the sensitivity of the sensor increase, and thus its measurement accuracy in a measurement application scenario? The inventor of the present disclosure, after repeated demonstration and careful consideration, proposes a magneto-sensitive element based on current output and a preparation method thereof. Specifically, an excitation electrode, a magnetic deflection current detection electrode and an active area with a comb-shaped structure are formed in the magneto-dependent sensor, excitation current is applied to the active area through the excitation electrode, the excitation current deflects under the action of a magnetic field, the deflection of the excitation current after deflection due to the action of the magnetic field is measured through the magnetic deflection current detection electrode by utilizing the current magnetic deflection effect, and the magnetic field measurement is finally carried out according to the deflection of the excitation current because the deflection is related to the intensity and the direction of the magnetic field, on one hand, because the current is the flow of charges, the stability of the current in a conductor is based on the stability of the current and is not easy to be subjected to the tiny disturbance (such as temperature change and the like), compared with the measurement of the voltage, various potential measurement errors can be eliminated or minimized especially for the measurement of the tiny voltage, and the temperature drift of the sensor can be effectively restrained, and the temperature stability of the sensor can be improved; on the other hand, because excitation current is applied, the deflection of the excitation current due to the action of a magnetic field is measured and directly reflects the effect of the magnetic field on the current, the Hall voltage is measured and the intensity of the magnetic field is calculated by measuring the potential difference indirectly generated by the excitation current, and the direct measurement generally has higher sensitivity than the indirect measurement, so that the sensitivity of the sensor is improved, and the measurement precision of the sensor in a measurement application scene is improved.
Fig. 1 shows a schematic structural diagram of a magneto-sensitive element according to an embodiment of the present disclosure. As shown in fig. 1, the magneto-sensitive element includes: the device comprises a substrate, an active region, an excitation electrode and a magnetic deflection current detection electrode; the substrate is positioned at the bottommost layer; the active region is formed on the substrate; the active area is in a comb-shaped structure, and the comb-shaped structure comprises a comb ridge and a plurality of comb teeth, wherein the plurality of comb teeth extend out from one side or multiple sides of the comb ridge; the excitation electrode is arranged on the comb ridge, is in electrical contact with the comb ridge, is connected with an external power supply through a wire and is used for applying excitation current to the magneto-sensitive element; the magnetic deflection current detection electrodes are disposed on both sides of the comb teeth (fig. 1 only shows a connection relationship, and no positional relationship is shown) and are used for detecting a current change generated after the excitation current is deflected due to the magnetic field.
Fig. 2 shows a schematic structural diagram of another magneto-sensitive element according to an embodiment of the present disclosure. The difference from the magneto-sensitive element shown in fig. 1 is that: the excitation electrode is arranged on the periphery of the comb ridge. When the excitation electrode is formed on the periphery of the comb ridge, the excitation electrode is formed on the comb ridge except for part of the excitation electrode, namely: is connected with the comb ridge to form electric contact, and the rest part is also formed on the insulating medium layer on the substrate, namely: the excitation electrode is electrically isolated from the substrate by an insulating dielectric layer.
According to the embodiment of the disclosure, the substrate is a semiconductor substrate, and the doping type of the substrate and the doping type of the active region are opposite to form PN junction isolation, so that when an excitation current is applied to the active region through the excitation electrode, the excitation current can be prevented from flowing from the active region to the substrate.
Specifically, the semiconductor substrate refers to a substrate made of a semiconductor material, which may be a single-element semiconductor such as silicon (Si) and germanium (Ge), or a compound semiconductor formed by combining two or more elements such as gallium arsenide (GaAs) and gallium indium arsenide phosphide (gaxn 1-xaryp 1-y), or the like.
In addition, semiconductor conductivity can be adjusted by controlling doping (i.e., doping impurities into the pure semiconductor). The doping types are generally classified into N-type and P-type. The N-type semiconductor refers to doping donor impurity atoms in the substrate, and the P-type semiconductor refers to doping acceptor impurity atoms in the substrate. When forming an active region on a semiconductor substrate, the doping type may be selected as desired. If the semiconductor substrate is of the N-type, then an active region of the P-type may be formed thereon; conversely, if the semiconductor substrate is P-type, an N-type active region may be formed thereon. The active region may be formed by ion implantation, diffusion, epitaxy, and the like.
Further, the performance of the magnetic sensor can be improved by optimizing and selecting the material of the active region. On the one hand, the active region can be made of a material with high mobility so as to increase the influence of a magnetic field on current, thereby improving the sensitivity of the magnetic sensor; on the other hand, the active region can be made of a material with a low temperature coefficient so as to reduce the influence of temperature change on the performance of the magnetic sensitive element, and therefore the performance stability of the magnetic sensitive element at different temperatures is improved.
It should be noted that: the sensitivity of the magneto-sensitive element can be adjusted by adjusting the thickness and doping concentration of the active region. The smaller the thickness of the active region is, the lower the doping concentration is, the higher the sensitivity is, but the smaller the thickness or the lower the doping concentration is, the larger the resistance is, the design of other functional circuits is not facilitated, and in the specific implementation, the proper doping concentration and thickness can be selected according to different application scenes and design requirements.
According to an embodiment of the present disclosure, the comb teeth in the comb-shaped structure may be a block-shaped structure, and the shape of the block-shaped structure may be a cuboid, a cube, or the like; but also can be flat, such as rectangle, square, etc.; each comb tooth shape may be identical. Those skilled in the art may choose according to the specific application scenario and design requirements. Different shapes may provide different performance advantages and functional characteristics to meet different usage requirements. For example: in case a specific magnetic field distribution needs to be detected, a comb of a specific shape can be designed.
According to an embodiment of the present disclosure, the comb structure is a symmetrical comb structure.
In particular, the symmetrical comb structure includes, but is not limited to: an axisymmetric comb structure and/or a rotationally symmetric comb structure. The axisymmetric comb structure refers to a comb structure with axisymmetric property, namely, after being folded along a certain symmetry axis, two parts can be completely overlapped, and comb teeth parts of the comb structure show equidistant arrangement or repeated pattern, namely, the comb structure has regularity and repeatability. Axisymmetric comb structures include, but are not limited to: rectangular symmetrical comb structure. The rotationally symmetrical comb structure refers to a comb structure with rotational symmetry, the shape or pattern of which remains unchanged after a rotation of a certain angle (e.g. 90 degrees or 180 degrees) around the center. Rotationally symmetrical comb structures include, but are not limited to: an annular symmetrical comb structure, a circular symmetrical comb structure or a regular polygon symmetrical comb structure.
The working principle of the magneto-sensitive element in the embodiment of the disclosure is to utilize the current magnetic deflection effect in the semiconductor, namely: when a magnetic field perpendicular to the active region exists, excitation current applied to the active region can deflect when passing through the comb spines according to the lorentz force principle, the deflected excitation current can flow in a dispersed manner among the comb teeth based on the existence of the comb teeth, and the current received by electrodes at two sides of the comb teeth can be different in magnitude. The variation of deflection of excitation current under the action of magnetic field is obtained by measuring the current difference at two sides of each comb tooth, namely: deflection of the excitation current. Due to the design of the comb-shaped structure, exciting current is dispersed among a plurality of comb teeth, and deflection of the current can be more effectively detected, so that sensitivity of the magnetic sensor is improved.
In addition, the current magnetic deflection effect and the hall effect exist simultaneously and are in this relationship, namely: the two will cancel each other. The inventor of the present disclosure has found through repeated experiments and demonstrations that, for a non-rotationally symmetrical comb structure, when the length dimension of the comb ridge in the comb tooth arrangement direction is at least 3 times greater than the width dimension of the comb ridge, the current magnetic deflection effect is far greater than the hall effect, so that the sensitivity of the magnetic sensor is improved. For example: for the rectangular symmetrical comb structure, if the comb teeth are arranged on the long side of the rectangle, the long side of the rectangle is the length of the comb ridge, the length of the comb teeth subtracted from the wide side of the rectangle is the width of the comb ridge, and in order to enable the current magnetic deflection effect to be far greater than the Hall effect, the sensitivity of the magnetic sensor is improved, and the size of the length of the comb ridge can be far greater than the width of the comb ridge. In one embodiment, the size of the spine length is at least 3 times greater than the spine width.
According to an embodiment of the present disclosure, the size and spacing of the teeth of the comb structure are equal.
In particular, the equal dimensions of the individual teeth of the comb-like structure means that the length, width (or diameter if the teeth are cylindrical) and any other relevant dimensions of each tooth are identical. The equal spacing of the teeth of the comb-like structure means that the distances between two adjacent teeth are equal.
The excitation electrode and the magnetic deflection current detection electrode according to the embodiments of the present disclosure may be made of a metal having good conductivity and stability, such as: gold (Au), silver (Ag), or copper (Cu), etc. And leads are respectively connected with the electric wires for leading in or leading out current.
According to an embodiment of the present disclosure, the excitation electrode is one. This is different from conventional hall elements in which there are typically two excitation electrodes. Two excitation electrodes in a hall element are required, mainly based on the principle of operation of the hall effect.
The hall effect is a phenomenon in which a carrier (electron or hole) current in a semiconductor is deflected by lorentz force under the action of a magnetic field perpendicular to the current direction, thereby generating a potential difference in the direction perpendicular to the current and the magnetic field. This potential difference is the hall voltage, whose magnitude is proportional to the current density, the magnetic field strength and the hall coefficient of the semiconductor material. The hall voltage is generated by first generating a current in the semiconductor, and therefore, two excitation electrodes in the hall element are required to be respectively located on two opposite sides of the hall element. The two electrodes are connected by a conductor to form a closed loop so that current can flow between the two electrodes.
As described above, since the working principle of the magneto-sensitive element in the embodiments of the present disclosure is not to use the hall effect, but to use the current magnetic deflection effect in the semiconductor, accordingly, the magnetic field measurement is not realized by the measurement of the hall voltage, but by the measurement of the deflection amount of the excitation current, which is realized by only one excitation electrode. Thus, the number of excitation electrodes may vary based on the operating principle, and the specific shape of the excitation electrode in the embodiments of the present disclosure may depend on the specific shape of the active region.
For the position of the excitation electrode and other components in embodiments of the present disclosure, the following scenarios may be included:
first scenario: the excitation electrode is in electrical contact with the entire periphery of the comb spine. Such a scenario may correspond to the active region being a circularly symmetric comb structure.
Second scenario: the excitation electrode is arranged at the center of the comb ridge. Such a scenario may correspond to the active region being a circularly symmetric comb structure or a regular polygon symmetric comb structure.
Third scenario: the exciting electrode is arranged at the periphery of the comb ridge or the position, close to the edge of the comb ridge, of the opposite side edge of each comb tooth, and the center line of the exciting electrode coincides with the center line of the opposite side edge. Such a scenario may correspond to the active region being a rectangular symmetrical comb structure.
The magnetic deflection current detection electrode according to the embodiments of the present disclosure is different from a hall electrode for measuring a hall voltage in a conventional hall element. In order to measure the deflection amount of the excitation current, according to an embodiment of the present disclosure, the magnetic deflection current detection electrode may include a magnetic deflection current detection positive electrode disposed at a first side of each comb tooth and a magnetic deflection current detection negative electrode disposed at a second side of each comb tooth. Each magnetic deflection current detection positive electrode is connected with each other and each magnetic deflection current detection negative electrode is connected with each other and then is connected with an external current measurement circuit through a lead wire.
In addition to the embodiments described above, other embodiments may be used according to different application scenarios and design requirements, such as: the magnetic deflection current detection positive electrode and the magnetic deflection current detection negative electrode are respectively arranged on the first side and the second side of two or more comb teeth at intervals, or the magnetic deflection current detection electrodes are designed and arranged in other ways, so long as the implementation scheme that the current change generated after the excitation current is deflected due to the action of a magnetic field and measured by the magnetic deflection current detection electrodes is met, the implementation scheme is within the protection scope of the disclosure.
According to an embodiment of the present disclosure, the magnetic deflection current detection electrodes are plural, and each magnetic deflection current detection electrode is equal in size. In addition, the positions of the magnetic deflection current detection electrodes are also symmetrical to each other.
It should be noted that: when the overall structure formed by the active region, the excitation electrode and the magnetic deflection current detection electrode all meet the same symmetry, for example: all are symmetrical based on a symmetry axis, and when no magnetic field is applied, the deflection amount of the excitation current detected by the magnetic deflection current detection electrode is 0, namely, no zero offset exists. When the magnetic sensor is used for magnetic field measurement, zero offset caused by integral offset and alignment errors of different structures in the preparation process can be effectively eliminated, so that the accuracy of the test can be improved, and the implementation complexity is reduced.
With the above general description of the components of the magneto-sensitive element according to the embodiments of the present disclosure, the magneto-sensitive element shown in fig. 1 and 2 will be specifically described below by means of four specific embodiments, based on the specific shape characteristics of the comb-shaped structure of the active region, the specific implementation of the magnetic deflection current detection electrode, and the positional relationship of the excitation electrode and the magnetic deflection current detection electrode with the respective components of the active region, respectively.
Fig. 3 shows a schematic diagram of a structure of a magneto-sensitive element in a top view according to an embodiment of the present disclosure. In order to clearly show the structure of the active region and the respective structures and the positional relationship of the magnetic deflection current detection electrode and the excitation electrode with respect to each other, fig. 3 shows the magnetic sensor in a top view, without showing the substrate.
As shown in fig. 3, the magneto-sensitive element includes: a substrate, an active region, an excitation electrode, a magnetic deflection current detection positive electrode, and a magnetic deflection current detection negative electrode; the substrate is located at the bottom most layer (not shown in fig. 3); the active area is of a rectangular symmetrical comb-shaped structure, the rectangular symmetrical comb-shaped structure comprises a comb ridge and a plurality of comb teeth, and the plurality of comb teeth extend out of one side of the comb ridge in parallel. The size and the interval of each comb tooth of the comb-shaped structure are equal, and the length of the comb ridge is more than 3 times of the width of the comb ridge. The excitation electrode is arranged on the comb ridge of the opposite side of each comb tooth and is close to the edge of the comb ridge, the shape of the excitation electrode is rectangular, the center line of the excitation electrode coincides with the center line of the opposite side, the excitation electrode is in electrical contact with the comb ridge, and the excitation electrode is connected with an external power supply through a lead and is used for applying excitation current to the magneto-sensitive element; the magnetic deflection current detection positive electrodes are arranged on the first sides of the comb teeth, the magnetic deflection current detection negative electrodes are arranged on the second sides of the comb teeth, specifically, the magnetic deflection current detection positive electrodes are respectively arranged on the left sides of the comb teeth, and the magnetic deflection current detection negative electrodes are respectively arranged on the right sides of the comb teeth, and when in specific implementation, the magnetic deflection current detection positive electrodes are vice versa, namely: each magnetic deflection current detection positive electrode can be respectively arranged on the right side edge of each comb tooth, and each magnetic deflection current detection negative electrode can be respectively arranged on the left side edge of each comb tooth. The number of the magnetic deflection current detection positive electrodes is equal to the number of the magnetic deflection current detection negative electrodes. The magnetic deflection current detection positive electrodes are connected with each other to form an entire magnetic deflection current detection positive electrode, the magnetic deflection current detection negative electrodes are connected with each other to form an entire magnetic deflection current detection negative electrode, and the entire magnetic deflection current detection positive electrode and the entire magnetic deflection current detection negative electrode are respectively connected with an external current measurement circuit through wires. Wherein, the sizes of each magnetic deflection current detection positive electrode and each magnetic deflection current detection negative electrode are equal, and the positions on both sides of each comb tooth are also the same.
Based on the specific structures of the active region, the excitation electrode, and the magnetic deflection current detection positive and negative electrodes and the positional relationship therebetween as described above, it can be determined that the connection resistance values between the excitation electrode and the magnetic deflection current detection positive and negative electrodes, respectively, are the same, corresponding to two identical resistances in parallel, so that the magnitudes of currents detected by the magnetic deflection current detection positive and negative electrodes, respectively, are the same when no magnetic field is present, that is, the deflection amount of the excitation current is 0.
In order to improve the sensitivity of the magnetic sensor, one way is to change the size and the interval of the comb teeth, and increase the number of the comb teeth by reducing the width and the interval of the comb teeth so as to improve the density of the comb teeth, thereby effectively improving the sensitivity of the magnetic sensor; another way is to optimize the shape of the active region, as described above, in order to make the current magnetic deflection effect much larger than the hall effect, the length of the comb-like portion of the comb-like structure of the active region is much larger than its width, which for a rectangular symmetrical comb-like structure as shown in fig. 3, would make the length of the active region longer, which would result in the magneto-sensitive element being oversized, making it unusable in some application scenarios.
Fig. 4 shows a schematic structural diagram of another magneto-sensitive element in a top view according to an embodiment of the present disclosure.
As shown in fig. 4, the magneto-sensitive element includes: a substrate, an active region, an excitation electrode, a magnetic deflection current detection positive electrode, and a magnetic deflection current detection negative electrode; the substrate is located at the bottom most layer (not shown in fig. 4); the active area is of an annular symmetrical comb-shaped structure, the annular symmetrical comb-shaped structure comprises an annular comb ridge and a plurality of comb teeth, and the plurality of comb teeth extend out of the outer side of the annular comb ridge in parallel. The size and the interval of each comb tooth of the comb-shaped structure are equal. The excitation electrode is arranged on the comb ridge (in another specific embodiment, the excitation electrode can also be arranged on the periphery of the inner side of the annular comb ridge) at the position, close to the edge of the comb ridge, of the inner side of the annular comb ridge, and the excitation electrode is also annular in shape, forms electric contact with the comb ridge, is connected with an external power supply through a wire and is used for applying excitation current to the magnetic sensor; the magnetic deflection current detection positive electrodes are arranged on the first sides of the comb teeth, the magnetic deflection current detection negative electrodes are arranged on the second sides of the comb teeth, specifically, the magnetic deflection current detection positive electrodes are respectively arranged on the left sides of the comb teeth, and the magnetic deflection current detection negative electrodes are respectively arranged on the right sides of the comb teeth. The magnetic deflection current detection positive electrodes are connected with each other to form an entire magnetic deflection current detection positive electrode, the magnetic deflection current detection negative electrodes are connected with each other to form an entire magnetic deflection current detection negative electrode, and the entire magnetic deflection current detection positive electrode and the entire magnetic deflection current detection negative electrode are respectively connected with an external current measurement circuit through wires. Wherein, the sizes of each magnetic deflection current detection positive electrode and each magnetic deflection current detection negative electrode are equal, and the positions on both sides of each comb tooth are also the same.
In the embodiment of the disclosure, the active region of the magneto-sensitive element adopts the annular symmetrical comb structure shown in fig. 4, because in the annular structure, current in the radial direction only has the current deflection effect and no hall effect, the hall effect can be completely eliminated, and the current magnetic deflection effect is maximized, so that the size of the active region is kept at a smaller level while higher sensitivity is obtained, the size of the magneto-sensitive element is reduced while the sensitivity is improved, and the technical effect of miniaturization of components is achieved. In addition, in the annular symmetrical comb structure shown in fig. 4, the sensitivity of the magneto-sensitive element can be further improved by reducing the width of the comb teeth and the comb teeth spacing, and simultaneously increasing the number of the comb teeth.
In addition to the rectangular symmetrical comb structure and the annular symmetrical comb structure shown in fig. 3 and 4, a circular symmetrical comb structure as shown in fig. 5 and a square symmetrical comb structure as shown in fig. 6 may be employed. The rotationally symmetrical structure shown in fig. 4-6 utilizes a rotating current method, and because the current or magnetic field is uniformly distributed in a plurality of phases, the hall effect can be completely eliminated, the current magnetic deflection effect is maximized, zero offset is reduced or even eliminated, the sensitivity of the magnetic sensor is further improved, and the size of the magnetic sensor is reduced while the high sensitivity is obtained. In other specific embodiments, other shapes of symmetrical comb structures can be adopted, and the technical schemes of measuring the magnetic field by measuring the deflection of the exciting current based on the current magnetic deflection effect and adopting the comb structure in the active area are all within the protection scope of the disclosure.
Fig. 5 shows a schematic structural diagram of still another magnetic sensor in a top view according to an embodiment of the present disclosure.
As shown in fig. 5, the magneto-sensitive element includes: a substrate, an active region, an excitation electrode, a magnetic deflection current detection positive electrode, and a magnetic deflection current detection negative electrode; the substrate is located at the bottom most layer (not shown in fig. 5); the difference from the magneto-sensitive element shown in fig. 4 is that: in fig. 5, the active region is a circularly symmetric comb structure including a circular comb ridge and a plurality of comb teeth extending in parallel from an outer side of the circular comb ridge. The excitation electrode is arranged at the center of the circular comb ridge, and the shape of the excitation electrode is also circular.
Fig. 6 shows a schematic structural diagram of still another magneto-sensitive element in a top view direction according to an embodiment of the present disclosure.
As shown in fig. 6, the magneto-sensitive element includes: a substrate, an active region, an excitation electrode, a magnetic deflection current detection positive electrode, and a magnetic deflection current detection negative electrode; the substrate is located at the bottom most layer (not shown in fig. 6); the difference from the magneto-sensitive element shown in fig. 5 is that: in fig. 6, the active region is a square symmetrical comb structure including a square comb ridge and a plurality of comb teeth extending in parallel from four sides of the square comb ridge. The excitation electrode is arranged at the center of the square comb ridge, and the shape of the excitation electrode is square.
Fig. 7 illustrates a schematic structure of a magneto-dependent sensor according to an embodiment of the present disclosure. As shown in fig. 7, the magneto-dependent sensor includes: the magneto-sensitive element of any one of the embodiments of the present disclosure, and an excitation current deflection measurement module; the excitation current deflection measuring module is connected with a magnetic deflection current detecting electrode of the magnetic sensitive element and is used for measuring the deflection amount of the excitation current after the excitation current is deflected when the excitation current is applied to an active area of the magnetic sensitive element through the excitation electrode of the magnetic sensitive element and a magnetic field perpendicular to the upper plane of the active area exists.
Fig. 8 illustrates a schematic structure of another magneto-dependent sensor according to an embodiment of the present disclosure. As shown in fig. 8, the magneto-dependent sensor further includes: the magnetic field measurement module is connected with the excitation current deflection measurement module; the magnetic field measurement module is configured to measure the magnetic field based on a deflection amount of the excitation current.
According to an embodiment of the present disclosure, the measuring of the deflection amount of the excitation current after the excitation current is deflected using the magnetic deflection current detection electrode includes: detecting a first deflection current value by using a magnetic deflection current detection positive electrode of the magnetic sensor; detecting a second deflection current value by using a magnetic deflection current detection negative electrode of the magneto-sensitive element; determining a deflection amount of the excitation current according to the first deflection current value and the second deflection current value; wherein the deflection amount of the excitation current is a difference value between the first deflection current value and the second deflection current value.
According to an embodiment of the present disclosure, the measuring the magnetic field according to the deflection amount of the excitation current includes: the strength of the magnetic field is measured from the difference between the first deflection current value and the second deflection current value. In addition, the direction of the magnetic field may be determined according to the difference between the first deflection current value and the second deflection current value, for example: if the difference is negative, the direction of the magnetic field is opposite to the direction when it is positive.
According to an embodiment of the present disclosure, the strength of the magnetic field is linearly related to the deflection amount of the excitation current, the measuring the magnetic field according to the deflection amount of the excitation current includes: determining a linear proportionality coefficient according to the sensitivity coefficient of the magneto-sensitive element and the current value of the excitation current; the strength of the magnetic field is determined from the linear scaling factor and the deflection of the excitation current.
Wherein determining a linear scaling factor from the sensitivity coefficient of the magneto-sensitive element and the current value of the excitation current comprises:
determining the linear scaling factor according to the formula ：
Determining the strength of the magnetic field from the linear scaling factor and the deflection of the excitation current, comprising:
determining the strength of the magnetic field according to the following formula ：
Wherein, The sensitivity coefficient of the magnetic sensor is represented, the sensitivity coefficient of the magnetic sensor is a constant which is determined in advance according to the material and structure of the magnetic sensor and the temperature characteristic, the higher the sensitivity of the magnetic sensor is, the larger the sensitivity coefficient is,A current value representing the excitation current,Representing the deflection of the excitation current.
According to an embodiment of the present disclosure, when an excitation current is applied to the active region through the excitation electrode, a constant current source is used for power supply. Namely: the excitation current is a constant value, usually 1mA to 1. Mu.A. The specific data may depend on the actual application scenario and the specific structure. By adopting the constant current source to supply power, the supplied current can not change along with the change of external environment (such as temperature and humidity), thereby ensuring the stability of the magneto-dependent sensor in the measuring process. In addition, errors caused by current fluctuation on the measurement result can be reduced, and a good linear relation can be maintained in the measurement process, so that the measurement result is more accurate and reliable.
Fig. 9 shows a flow chart of a method of fabricating a magneto-sensitive element according to an embodiment of the present disclosure. As shown in FIG. 9, the preparation method comprises the following steps S910 to S940:
In step S910, a substrate is provided, the substrate being located at the bottommost layer.
In the implementation of step S910, an appropriate substrate material may be selected according to a specific application scenario and design requirements, for example: semiconductor materials having relatively high carrier mobilities may be used, such as: gallium nitride, silicon carbide, low doped silicon and other materials to adapt to the subsequent processing and device working requirements.
After the substrate is formed, the substrate can be cleaned to remove surface impurities and pollutants so as to ensure the quality of the subsequent process.
In step S920, an active region is formed on the substrate. The active region is a comb-like structure including a spine and a plurality of teeth extending from one or more sides of the spine.
In the implementation of the step S920, an insulating dielectric layer is first deposited on the cleaned substrate surface, for example: silicon oxide or silicon nitride, defining an active region pattern of a comb-shaped structure through photoetching or masking and other processes, removing an insulating medium layer of the active region, and finally forming a required doping layer on the active region pattern by using an ion implantation method to form a preliminary structure of comb ridges and comb teeth. Then, unnecessary material portions are removed by etching, stripping or other processes to form an accurate comb-structured active region.
In step S930, excitation electrodes are formed. The excitation electrode is arranged on the comb ridge or at the periphery of the comb ridge, is in electrical contact with the comb ridge, is connected with an external power supply through a wire, and is used for applying excitation current to the magneto-sensitive element.
When forming the excitation electrode on the comb ridge, the pattern of the excitation electrode can be defined on the comb ridge by photoetching or masking technology, and a heavily doped region is formed by adopting an ion implantation mode, and then a metal deposition technology (such as sputtering, evaporation and the like) is used for depositing conductive materials such as gold, silver, copper and the like on the heavily doped region. In addition, the electric contact performance between the excitation electrode and the comb ridge can be improved through heat treatment or other processes, so that smooth current flow can be ensured. Finally, the excitation electrode is connected with an external power supply through a lead wire, so that stable excitation current can be provided for the magneto-sensitive element.
When the excitation electrode is formed on the periphery of the comb ridge, the excitation electrode is formed on the comb ridge, and the rest part is formed on the substrate through the insulating medium layer.
In step S940, a magnetic deflection current detection electrode is formed. The magnetic deflection current detection electrodes are arranged on two sides of the comb teeth and are used for detecting current changes generated after the excitation current is deflected due to the action of a magnetic field.
When the magnetic deflection current detection electrode is formed, patterns of the magnetic deflection current detection electrode can be defined on two sides of the comb teeth through photoetching or masking technology, a heavily doped region is formed in an ion implantation mode, and then a metal deposition technology is used for depositing a conductive material on the heavily doped region. In addition, when the magnetic deflection current detection electrode is formed, the distance and the position relation between the magnetic deflection current detection electrode and the comb teeth are ensured to meet the design requirements so as to accurately detect the current change.
It should be noted that: the steps S930 and S940 are executed in no order, and it may be selected whether to execute the step S930 or the step S940 first according to the specific application scenario and design requirement.
According to an embodiment of the present disclosure, the magnetic deflection current detection electrode includes a magnetic deflection current detection positive electrode and a magnetic deflection current detection negative electrode, the magnetic deflection current detection electrode being disposed at both sides of the comb teeth, including:
The magnetic deflection current detection positive electrodes are arranged on the first sides of the comb teeth, the magnetic deflection current detection negative electrodes are arranged on the second sides of the comb teeth, and the magnetic deflection current detection positive electrodes are connected with each other and the magnetic deflection current detection negative electrodes are connected with an external current measurement circuit through wires.
According to an embodiment of the present disclosure, the comb structure is a symmetrical comb structure.
According to an embodiment of the present disclosure, the symmetrical comb structure comprises an axisymmetrical comb structure and/or a rotationally symmetrical comb structure, the axisymmetrical comb structure comprising: rectangular symmetrical comb structure; the rotationally symmetrical comb structure comprises: an annular symmetrical comb structure, a circular symmetrical comb structure or a regular polygon symmetrical comb structure.
According to an embodiment of the present disclosure, the size and spacing of the teeth of the comb structure are equal.
According to an embodiment of the present disclosure, the magnetic deflection current detection electrodes are plural, and each magnetic deflection current detection electrode is equal in size.
According to an embodiment of the present disclosure, the excitation electrode is one.
According to an embodiment of the present disclosure, the excitation electrode is electrically contacted to the entire periphery of the comb ridge, or the excitation electrode is disposed at the center of the comb ridge, or the excitation electrode is disposed at the periphery of the comb ridge or at the position close to the edge of the comb ridge on the opposite side of each comb tooth, and the center line of the excitation electrode coincides with the center line of the opposite side.
According to an embodiment of the disclosure, the substrate is a semiconductor substrate, the substrate being of opposite doping type to the active region.
According to an embodiment of the present disclosure, the length dimension of the comb ridge in the comb tooth arrangement direction is greater than 3 times the width dimension of the comb ridge.
Except for the steps S910 to S940, the preparation method of the magneto-sensitive element further comprises the following steps: and packaging, detecting and calibrating the magneto-sensitive element to protect the internal structure and the circuit and improve the stability and the reliability of the device. The method specifically comprises the following steps of: and performing performance test on the prepared magnetic sensitive element, including detection of indexes such as excitation current application and magnetic field response, and calibrating according to test results to ensure that the performance of the magnetic sensitive element meets design requirements.
The present disclosure also provides an electronic device including the magneto-sensitive element described in the embodiments of the present disclosure.
The present disclosure also provides a chip including the magneto-sensitive element described in the embodiments of the present disclosure.
The present disclosure also provides a chip including the magneto-sensitive sensor described in the embodiments of the present disclosure.
The present disclosure also provides an electronic device including the magneto-sensitive element described in the embodiments of the present disclosure.
The present disclosure also provides an electronic device including the magneto-dependent sensor described in the embodiments of the present disclosure.
According to the technical scheme provided by the embodiment of the disclosure, the excitation electrode, the magnetic deflection current detection electrode and the active area with the comb-shaped structure are formed in the magneto-dependent sensor, then excitation current is applied to the active area through the excitation electrode, the excitation current deflects under the action of a magnetic field, the deflection quantity of the excitation current after deflection is detected through the magnetic deflection current detection electrode by utilizing the current magnetic deflection effect, and finally magnetic field measurement is performed according to the deflection quantity of the excitation current because the deflection quantity is related to the intensity and the direction of the magnetic field, so that the sensitivity of the sensor is improved, and the measurement accuracy of the magneto-dependent sensor in a measurement application scene is improved.
The foregoing description is only of the preferred embodiments of the present disclosure and description of the principles of the technology being employed. It will be appreciated by those skilled in the art that the scope of the invention referred to in this disclosure is not limited to the specific combination of features described above, but encompasses other embodiments in which any combination of features described above or their equivalents is contemplated without departing from the inventive concepts described. Such as those described above, are mutually substituted with the technical features having similar functions disclosed in the present disclosure (but not limited thereto).
Claims (24)
1. A magneto-sensitive element, the magneto-sensitive element comprising: the device comprises a substrate, an active region, an excitation electrode and a magnetic deflection current detection electrode;
the substrate is positioned at the bottommost layer;
The active region is formed on the substrate; the active area is of a symmetrical comb-shaped structure, and the symmetrical comb-shaped structure comprises a comb ridge and a plurality of comb teeth, wherein the plurality of comb teeth extend out from one side or multiple sides of the comb ridge; wherein the symmetrical comb structure comprises: an annular symmetrical comb structure, a circular symmetrical comb structure, a regular polygon symmetrical comb structure or a rectangular symmetrical comb structure, wherein when the symmetrical comb structure is a rectangular symmetrical comb structure, the length dimension of the comb ridge in the comb tooth arrangement direction is larger than 3 times of the width dimension of the comb ridge;
The excitation electrode is arranged on the comb ridge or at the periphery of the comb ridge, is in electrical contact with the comb ridge, is connected with an external power supply through a wire and is used for applying excitation current to the magneto-sensitive element;
The magnetic deflection current detection electrodes are arranged on two sides of the comb teeth and are used for detecting current changes generated after the excitation current is deflected due to the action of a magnetic field.
2. The magneto-sensitive element according to claim 1, wherein the magnetic deflection current detection electrode includes a magnetic deflection current detection positive electrode and a magnetic deflection current detection negative electrode, the magnetic deflection current detection electrode being provided on both sides of the comb teeth, comprising:
The magnetic deflection current detection positive electrodes are arranged on the first sides of the comb teeth, the magnetic deflection current detection negative electrodes are arranged on the second sides of the comb teeth, and the magnetic deflection current detection positive electrodes are connected with each other and the magnetic deflection current detection negative electrodes are connected with an external current measurement circuit through wires.
3. A magneto-sensitive element according to claim 1, wherein the number of the magnetic deflection current detection electrodes is plural, and the sizes of the respective magnetic deflection current detection electrodes are equal.
4. A magneto-sensitive element according to claim 1, wherein,
The excitation electrode electrically contacts the entire periphery of the comb spine, or
The excitation electrode is arranged at the center of the comb ridge, or
The exciting electrode is arranged at the periphery of the comb ridge or the position, close to the edge of the comb ridge, of the opposite side edge of each comb tooth, and the center line of the exciting electrode coincides with the center line of the opposite side edge.
5. A magneto-sensitive element according to claim 1, wherein,
The size and the interval of each comb tooth of the symmetrical comb-shaped structure are equal.
6. A magneto-sensitive element according to claim 1, wherein,
The substrate is a semiconductor substrate, and the doping type of the substrate is opposite to that of the active region.
7. A magneto-dependent sensor, comprising:
A magneto-sensitive element according to any one of claims 1 to 6; and
And the excitation current deflection measurement module is connected with the magnetic deflection current detection electrode of the magnetic sensor and is used for measuring the deflection amount of the excitation current after the excitation current is deflected by the magnetic deflection current detection electrode when the excitation current is applied to the active area of the magnetic sensor through the excitation electrode of the magnetic sensor and a magnetic field perpendicular to the upper plane of the active area exists.
8. The magneto-dependent sensor of claim 7, wherein said magneto-dependent sensor further comprises: the magnetic field measurement module is connected with the excitation current deflection measurement module;
The magnetic field measurement module is configured to measure the magnetic field based on a deflection amount of the excitation current.
9. The magneto-dependent sensor of claim 8, wherein said measuring a deflection amount of said excitation current after said excitation current is deflected using said magnetic deflection current detection electrode comprises:
Detecting a first deflection current value by using a magnetic deflection current detection positive electrode of the magnetic sensor;
detecting a second deflection current value by using a magnetic deflection current detection negative electrode of the magneto-sensitive element;
determining a deflection amount of the excitation current according to the first deflection current value and the second deflection current value; wherein the deflection amount of the excitation current is a difference value between the first deflection current value and the second deflection current value;
said measuring said magnetic field as a function of the deflection of said excitation current, comprising:
the strength of the magnetic field is measured from the difference between the first deflection current value and the second deflection current value.
10. The magneto-dependent sensor of claim 8, wherein the strength of said magnetic field is linear with the amount of deflection of said excitation current, said measuring said magnetic field from the amount of deflection of said excitation current comprising:
determining a linear proportionality coefficient according to the sensitivity coefficient of the magneto-sensitive element and the current value of the excitation current;
The strength of the magnetic field is determined from the linear scaling factor and the deflection of the excitation current.
11. The magneto-sensitive sensor according to claim 10, wherein the determining a linear scaling factor from a sensitivity factor of the magneto-sensitive element and a current value of the excitation current comprises:
determining the linear scaling factor according to the formula ：
；
Wherein, Representing the sensitivity coefficient of the magneto-sensitive element,A current value representing the excitation current.
12. The magneto-dependent sensor of claim 11, wherein said determining the strength of said magnetic field from said linear scaling factor and the amount of deflection of said excitation current comprises:
determining the strength of the magnetic field according to the following formula ：
；
Wherein, Representing the deflection of the excitation current.
13. The magneto-dependent sensor of claim 7, wherein a constant current source is used to supply power when an excitation current is applied to said active region through said excitation electrode.
14. A method for preparing a magneto-sensitive element, the method comprising:
providing a substrate, wherein the substrate is positioned at the bottommost layer;
Forming an active region on the substrate; the active area is of a symmetrical comb-shaped structure, and the symmetrical comb-shaped structure comprises a comb ridge and a plurality of comb teeth, wherein the plurality of comb teeth extend out from one side or multiple sides of the comb ridge; wherein the symmetrical comb structure comprises: an annular symmetrical comb structure, a circular symmetrical comb structure, a regular polygon symmetrical comb structure or a rectangular symmetrical comb structure, wherein when the symmetrical comb structure is a rectangular symmetrical comb structure, the length dimension of the comb ridge in the comb tooth arrangement direction is larger than 3 times of the width dimension of the comb ridge;
forming an excitation electrode; the excitation electrode is arranged on the comb ridge or at the periphery of the comb ridge, is in electrical contact with the comb ridge, is connected with an external power supply through a wire and is used for applying excitation current to the magneto-sensitive element;
Forming a magnetic deflection current detection electrode; the magnetic deflection current detection electrodes are arranged on two sides of the comb teeth and are used for detecting current changes generated after the excitation current is deflected due to the action of a magnetic field.
15. The method of manufacturing according to claim 14, wherein the magnetic deflection current detection electrode includes a magnetic deflection current detection positive electrode and a magnetic deflection current detection negative electrode, the magnetic deflection current detection electrode being provided on both sides of the comb teeth, comprising:
The magnetic deflection current detection positive electrodes are arranged on the first sides of the comb teeth, the magnetic deflection current detection negative electrodes are arranged on the second sides of the comb teeth, and the magnetic deflection current detection positive electrodes are connected with each other and the magnetic deflection current detection negative electrodes are connected with an external current measurement circuit through wires.
16. The method of claim 14, wherein the plurality of magnetic deflection current sensing electrodes are equal in size.
17. The method of claim 14, wherein the process comprises,
The excitation electrode electrically contacts the entire periphery of the comb spine, or
The excitation electrode is arranged at the center of the comb ridge, or
The exciting electrode is arranged at the periphery of the comb ridge or the position, close to the edge of the comb ridge, of the opposite side edge of each comb tooth, and the center line of the exciting electrode coincides with the center line of the opposite side edge.
18. The method of claim 14, wherein the process comprises,
The size and the interval of each comb tooth of the symmetrical comb-shaped structure are equal.
19. The method of claim 14, wherein the process comprises,
The substrate is a semiconductor substrate, and the doping type of the substrate is opposite to that of the active region.
20. An electronic device comprising a magneto-sensitive element according to any one of claims 1 to 6.
21. A chip comprising a magneto-sensitive element according to any one of claims 1 to 6.
22. A chip comprising the magneto-sensitive sensor of claim 7.
23. An electronic device comprising a magneto-sensitive element according to any one of claims 1 to 6.
24. An electronic device comprising the magneto-sensitive sensor of claim 7.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4999692A (en) * | 1987-05-12 | 1991-03-12 | The Governors Of The University Of Alberta | Semiconductor magnetic field sensor |
| US5592081A (en) * | 1994-04-06 | 1997-01-07 | Fuji Electric Co., Ltd. | Magnetic Sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US4939563A (en) * | 1989-08-18 | 1990-07-03 | Ibm Corporation | Double carrier deflection high sensitivity magnetic sensor |
| JP3368293B2 (en) * | 1993-06-07 | 2003-01-20 | 独立行政法人産業技術総合研究所 | Magnetic sensor |
| JP2742206B2 (en) * | 1993-12-07 | 1998-04-22 | 双葉電子工業株式会社 | 3D magnetic sensor |
| JP4794219B2 (en) * | 2005-06-07 | 2011-10-19 | Ｎｔｎ株式会社 | Magnetic array sensor circuit and rotation detection device using the same |
| DE102005040168A1 (en) * | 2005-08-25 | 2007-03-01 | Robert Bosch Gmbh | sensor arrangement |
| CN107290693B (en) * | 2017-06-02 | 2019-07-12 | 合肥工业大学 | A kind of comb teeth-shaped microsensor and preparation method for high magnetic measuring |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4999692A (en) * | 1987-05-12 | 1991-03-12 | The Governors Of The University Of Alberta | Semiconductor magnetic field sensor |
| US5592081A (en) * | 1994-04-06 | 1997-01-07 | Fuji Electric Co., Ltd. | Magnetic Sensor |
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