CN118467239A - Data acquisition method, hard disk and readable storage medium - Google Patents
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Abstract
Description
技术领域Technical Field
本申请涉及存储技术领域,尤其涉及一种数据获取方法、硬盘和可读存储介质。The present application relates to the field of storage technology, and in particular to a data acquisition method, a hard disk and a readable storage medium.
背景技术Background Art
现有的硬盘数据解码通常采用硬解码、软解码或软硬结合方式,现在多使用软解码进行纠错,这是因为软解码比硬解码纠错能力强,但是软解码过程中,由于每笔纠错的数据大小有限,因此需要对每页数据进行多次读取和导出以完成多笔纠错,从而大大增长纠错流程所耗费的时间。Existing hard disk data decoding usually adopts hard decoding, soft decoding or a combination of hard and soft decoding. Soft decoding is now mostly used for error correction. This is because soft decoding has stronger error correction capabilities than hard decoding. However, during the soft decoding process, since the data size of each error correction is limited, each page of data needs to be read and exported multiple times to complete multiple error corrections, which greatly increases the time consumed by the error correction process.
发明内容Summary of the invention
鉴于上述问题,本申请提出一种数据获取方法、硬盘和可读存储介质。In view of the above problems, the present application proposes a data acquisition method, a hard disk and a readable storage medium.
本申请实施例提出一种数据获取方法,包括:The present application embodiment provides a data acquisition method, including:
获取硬盘的纠错电压集,所述纠错电压集包括多个偏移电压值;Acquire an error correction voltage set of a hard disk, wherein the error correction voltage set includes a plurality of offset voltage values;
基于所述多个偏移电压值下读取到的多个原始待验证数据,对所述纠错电压集进行验证;Verifying the error correction voltage set based on a plurality of original to-be-verified data read at the plurality of offset voltage values;
当所述纠错电压集验证通过时,基于所述纠错电压集读取所述硬盘闪存中目标页的原始数据,其中,所述原始待验证数据为所述原始数据中的部分数据;When the error correction voltage set is verified, original data of a target page in the hard disk flash memory is read based on the error correction voltage set, wherein the original data to be verified is part of the original data;
将读取到的多个原始偏移数据存放至不同的缓存区中,其中,每一所述偏移电压值下读取的原始偏移数据放置在同一缓存区内;storing the read multiple original offset data in different buffer areas, wherein the original offset data read at each offset voltage value is placed in the same buffer area;
分别从所述不同的缓存区中依次获取对应的原始偏移子数据进行纠错,以获取若干个目标数据。The corresponding original offset sub-data are sequentially obtained from the different buffer areas for error correction to obtain a plurality of target data.
进一步地,在上述的数据获取方法中,所述纠错电压集包括主偏电压值、左偏电压值和右偏电压值,所述原始偏移数据包括原始主偏数据、原始左偏数据和原始右偏数据;所述基于所述纠错电压集读取所述硬盘闪存中目标页的原始数据,包括:Furthermore, in the above data acquisition method, the error correction voltage set includes a main bias voltage value, a left bias voltage value and a right bias voltage value, and the original offset data includes original main bias data, original left bias data and original right bias data; and reading the original data of the target page in the hard disk flash memory based on the error correction voltage set includes:
分别基于所述主偏电压值、所述左偏电压值和右偏电压值读取所述目标页的原始数据,对应得到所述原始主偏数据、所述原始左偏数据和所述原始右偏数据。The original data of the target page is read based on the main bias voltage value, the left bias voltage value and the right bias voltage value respectively, and the original main bias data, the original left bias data and the original right bias data are obtained accordingly.
进一步地,在上述的数据获取方法中,每个所述原始偏移数据分成若干个相同大小的所述原始偏移子数据,每个所述原始偏移子数据均对应所述原始数据的一子部分,相同所述子部分对应的所有所述原始偏移子数据相互对应;所述原始偏移子数据包括原始主偏子数据、原始左偏子数据和原始右偏子数据;所述分别从所述不同的缓存区中依次获取对应的原始偏移子数据进行纠错,以获取若干个目标数据,包括:Further, in the above data acquisition method, each of the original offset data is divided into a plurality of original offset sub-data of the same size, each of the original offset sub-data corresponds to a sub-portion of the original data, and all the original offset sub-data corresponding to the same sub-portion correspond to each other; the original offset sub-data includes original main offset sub-data, original left offset sub-data and original right offset sub-data; the corresponding original offset sub-data are sequentially acquired from the different buffer areas for error correction to acquire a plurality of target data, including:
分别从所述不同的缓存区中依次获取相互对应的原始偏移子数据进行纠错;Sequentially acquiring mutually corresponding original offset sub-data from the different buffer areas for error correction;
当所述原始主偏子数据的误码率不属于第一预设范围时,则将所述原始主偏子数据作为所述目标数据;When the bit error rate of the original main bias sub-data does not fall within the first preset range, the original main bias sub-data is used as the target data;
当所述原始主偏子数据的误码率属于所述第一预设范围,且所述原始左偏子数据的误码率不属于所述第一预设范围时,则将所述原始左偏子数据作为所述目标数据;When the bit error rate of the original main bias sub-data belongs to the first preset range, and the bit error rate of the original left bias sub-data does not belong to the first preset range, the original left bias sub-data is used as the target data;
当所述原始主偏子数据和所述原始左偏子数据的误码率均属于所述第一预设范围,且所述原始右偏子数据的误码率不属于所述第一预设范围时,则将所述原始右偏子数据作为所述目标数据;When the bit error rates of the original main bias sub-data and the original left bias sub-data both belong to the first preset range, and the bit error rate of the original right bias sub-data does not belong to the first preset range, the original right bias sub-data is used as the target data;
当所述原始主偏子数据、所述原始左偏子数据和所述原始右偏子数据的误码率均属于所述第一预设范围时,则确认纠错失败。When the bit error rates of the original main bias sub-data, the original left bias sub-data, and the original right bias sub-data all belong to the first preset range, it is confirmed that the error correction has failed.
进一步地,在上述的数据获取方法中,还包括:Furthermore, in the above data acquisition method, it also includes:
所述原始偏移子数据的数据量和所述原始待验证数据的数据量均小于等于单次可纠正最大数据量。The data volume of the original offset sub-data and the data volume of the original data to be verified are both less than or equal to the maximum data volume that can be corrected at one time.
进一步地,在上述的数据获取方法中,所述基于所述多个偏移电压值下读取到的多个原始待验证数据,对所述纠错电压集进行验证,包括:Furthermore, in the above data acquisition method, the verification of the error correction voltage set based on the multiple original data to be verified read under the multiple offset voltage values includes:
分别采用主偏电压值、左偏电压值和右偏电压值读取所述原始待验证数据,对应得到主偏验证数据、左偏验证数据和右偏验证数据;The original data to be verified are read using the main bias voltage value, the left bias voltage value and the right bias voltage value respectively, and main bias verification data, left bias verification data and right bias verification data are obtained correspondingly;
基于所述主偏验证数据、左偏验证数据和右偏验证数据对所述纠错电压集进行验证。The error correction voltage set is verified based on the main bias verification data, the left bias verification data and the right bias verification data.
进一步地,在上述的数据获取方法中,所述基于所述主偏验证数据、左偏验证数据和右偏验证数据对所述纠错电压集进行验证,包括:Further, in the above data acquisition method, the verifying the error correction voltage set based on the main bias verification data, the left bias verification data and the right bias verification data includes:
当所述主偏验证数据、所述左偏验证数据或所述右偏验证数据的误码率不属于第二预设范围时,则确认所述纠错电压集验证通过;When the bit error rate of the main bias verification data, the left bias verification data or the right bias verification data does not fall within a second preset range, it is confirmed that the error correction voltage set verification has passed;
当所述主偏验证数据、所述左偏验证数据和所述右偏验证数据的误码率均属于第二预设范围时,则确认所述纠错电压集验证未通过。When the bit error rates of the main bias verification data, the left bias verification data, and the right bias verification data all belong to the second preset range, it is confirmed that the error correction voltage set verification has failed.
进一步地,在上述的数据获取方法中,还包括:Furthermore, in the above data acquisition method, it also includes:
在对所述原始偏移子数据进行纠错时,还基于所述纠错电压集读取所述硬盘闪存中下一目标页的原始数据,以获取所述下一目标页对应的目标数据,直至获取完所有目标页的目标数据。When the original offset sub-data is corrected, the original data of the next target page in the hard disk flash memory is also read based on the error correction voltage set to obtain the target data corresponding to the next target page until the target data of all target pages are obtained.
进一步地,在上述的数据获取方法中,还包括:Furthermore, in the above data acquisition method, it also includes:
当纠错失败或所述纠错电压集验证未通过时,回到所述获取硬盘的纠错电压集的步骤,并将获取的新电压值作为所述纠错电压集。When the error correction fails or the error correction voltage set verification fails, the process returns to the step of obtaining the error correction voltage set of the hard disk, and uses the obtained new voltage value as the error correction voltage set.
本申请另一实施例还提出一种硬盘,包括存储单元和处理单元,所述存储单元中存储有计算机程序,所述处理单元通过调用所述存储单元中存储的所述计算机程序,执行上述的数据获取方法的步骤。Another embodiment of the present application further proposes a hard disk, including a storage unit and a processing unit, wherein the storage unit stores a computer program, and the processing unit executes the steps of the above-mentioned data acquisition method by calling the computer program stored in the storage unit.
本申请另一实施例还提出一种计算机可读存储介质,所述计算机可读存储介质存储有计算机程序,所述计算机程序适于处理器进行加载,以执行上述的数据获取方法的步骤。Another embodiment of the present application further provides a computer-readable storage medium, wherein the computer-readable storage medium stores a computer program, and the computer program is suitable for being loaded by a processor to execute the steps of the above-mentioned data acquisition method.
本申请的实施例具有以下的有益效果:The embodiments of the present application have the following beneficial effects:
本申请实施例提出一种数据获取方法,包括:获取硬盘的纠错电压集,纠错电压集包括多个偏移电压值;基于多个偏移电压值下读取到的多个原始待验证数据,对纠错电压集进行验证;当纠错电压集验证通过时,基于纠错电压集读取硬盘闪存中目标页的原始数据,其中,原始待验证数据为原始数据中的部分数据;将读取到的多个原始偏移数据存放至不同的缓存区中,其中,每一偏移电压值下读取的原始偏移数据放置在同一缓存区内;分别从不同的缓存区中依次获取对应的原始偏移子数据进行纠错,以获取若干个目标数据。本申请通过将每一页所有数据按照不同的偏移电压进行一次性读取,在后续纠错之前无需再多次读取每页中不同的数据,而是直接从缓存区中获取对应数据进行纠错,从而节省大量时间。The embodiment of the present application proposes a data acquisition method, including: obtaining an error correction voltage set of a hard disk, the error correction voltage set including multiple offset voltage values; verifying the error correction voltage set based on multiple original data to be verified read under multiple offset voltage values; when the error correction voltage set is verified, reading the original data of the target page in the flash memory of the hard disk based on the error correction voltage set, wherein the original data to be verified is part of the original data; storing the multiple original offset data read in different cache areas, wherein the original offset data read under each offset voltage value is placed in the same cache area; respectively obtaining the corresponding original offset sub-data from different cache areas in turn for error correction to obtain a number of target data. The present application saves a lot of time by reading all the data of each page at one time according to different offset voltages, and there is no need to read different data in each page multiple times before subsequent error correction, but directly obtaining the corresponding data from the cache area for error correction.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
为了更清楚地说明本申请的技术方案,下面将对实施例中所需要使用的附图作简单地介绍,应当理解,以下附图仅示出了本申请的某些实施例,因此不应被看作是对本申请保护范围的限定。在各个附图中,类似的构成部分采用类似的编号。In order to more clearly illustrate the technical solution of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only illustrate certain embodiments of the present application and should not be regarded as limiting the scope of protection of the present application. In each of the drawings, similar components are numbered similarly.
图1示出了本申请一些实施方式的数据获取方法的第一流程示意图;FIG1 shows a first schematic diagram of a data acquisition method in some embodiments of the present application;
图2示出了本申请一些实施方式的数据获取方法的第二流程示意图;FIG2 shows a second flow chart of the data acquisition method in some embodiments of the present application;
图3示出了本申请一些实施方式的数据获取方法的第三流程示意图;FIG3 shows a third flow chart of the data acquisition method in some embodiments of the present application;
图4示出了本申请一些实施方式的数据获取方法的目标页结构示意图;FIG4 is a schematic diagram showing a target page structure of a data acquisition method in some embodiments of the present application;
图5示出了本申请一些实施方式的数据获取系统的结构示意图。FIG5 is a schematic diagram showing the structure of a data acquisition system according to some embodiments of the present application.
具体实施方式DETAILED DESCRIPTION
下面将结合本申请实施例中附图,对本申请实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments.
通常在此处附图中描述和示出的本申请实施例的组件可以以各种不同的配置来布置和设计。因此,以下对在附图中提供的本申请的实施例的详细描述并非旨在限制要求保护的本申请的范围,而是仅仅表示本申请的选定实施例。基于本申请的实施例,本领域技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例,都属于本申请保护的范围。The components of the embodiments of the present application generally described and shown in the drawings herein may be arranged and designed in various configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.
在下文中,可在本申请的各种实施例中使用的术语“包括”、“具有”及其同源词仅意在表示特定特征、数字、步骤、操作、元件、组件或前述项的组合,并且不应被理解为首先排除一个或更多个其它特征、数字、步骤、操作、元件、组件或前述项的组合的存在或增加一个或更多个特征、数字、步骤、操作、元件、组件或前述项的组合的可能性。Hereinafter, the terms "including", "having" and their cognates, which may be used in various embodiments of the present application, are intended only to indicate specific features, numbers, steps, operations, elements, components, or combinations of the foregoing items, and should not be understood as first excluding the existence of one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing items or adding the possibility of one or more features, numbers, steps, operations, elements, components, or combinations of the foregoing items.
此外,术语“第一”、“第二”、“第三”等仅用于区分描述,而不能理解为指示或暗示相对重要性。Furthermore, the terms “first”, “second”, “third”, etc. are merely used for distinguishing descriptions and are not to be understood as indicating or implying relative importance.
除非另有限定,否则在这里使用的所有术语(包括技术术语和科学术语)具有与本申请的各种实施例所属领域普通技术人员通常理解的含义相同的含义。所述术语(诸如在一般使用的词典中限定的术语)将被解释为具有与在相关技术领域中的语境含义相同的含义并且将不被解释为具有理想化的含义或过于正式的含义,除非在本申请的各种实施例中被清楚地限定。Unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meanings as those generally understood by those skilled in the art to which the various embodiments of the present application belong. The terms (such as those defined in generally used dictionaries) will be interpreted as having the same meanings as the contextual meanings in the relevant technical field and will not be interpreted as having idealized meanings or overly formal meanings unless clearly defined in the various embodiments of the present application.
下面结合附图,对本申请的一些实施方式作详细说明。在不冲突的情况下,下述的实施例及实施例中的特征可以相互结合。In conjunction with the accompanying drawings, some embodiments of the present application are described in detail below. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.
通常地,软解码过程中,由于每次纠错的数据量有限,因此,需要将每页数据进行多次读取,每次读取每页的一部分数据,每读取一次纠错一次,直到该页数据纠错完。当需要进行多页甚至更多的数据纠错时,从而使得整个过程的耗时时间更长。Generally, during the soft decoding process, since the amount of data to be corrected each time is limited, each page of data needs to be read multiple times, with a portion of the data on each page being read each time, and the error is corrected each time until the page of data is corrected. When multiple pages or even more pages of data need to be corrected, the entire process takes longer.
因此,为了解决上述问题,本申请提出一种数据获取方法。Therefore, in order to solve the above problem, the present application proposes a data acquisition method.
请参照图1,为本申请实施例提出的数据获取方法的一种流程示意图。示范性地,该数据获取方法应用于固态硬盘中。Please refer to Figure 1, which is a flow chart of a data acquisition method proposed in an embodiment of the present application. Exemplarily, the data acquisition method is applied to a solid state drive.
在一些实施方式中,如图1所示,该数据获取方法包括:In some embodiments, as shown in FIG1 , the data acquisition method includes:
S110,获取硬盘的纠错电压集,纠错电压集包括多个偏移电压值。S110, obtaining an error correction voltage set of the hard disk, where the error correction voltage set includes a plurality of offset voltage values.
具体地,由于硬盘出厂时都有对应的各种参数表,通过这些表或者其他方式获取对应硬盘的纠错电压集,可设置为纠错电压集中的偏移电压值以对该硬盘进行数据读取,利用不同的偏移电压值读取相同硬盘位置的数据不同。Specifically, since hard disks have corresponding parameter tables when they leave the factory, the error correction voltage set of the corresponding hard disk can be obtained through these tables or other methods. The offset voltage value in the error correction voltage set can be set to read data from the hard disk. The data read at the same hard disk position will be different using different offset voltage values.
S210,基于多个偏移电压值下读取到的多个原始待验证数据,对纠错电压集进行验证。S210 , verifying the error correction voltage set based on a plurality of original to-be-verified data read at a plurality of offset voltage values.
具体地,由于同页数据基本上可使用相同的偏移电压完成纠错操作,但是不同页数据所需要的偏移电压可能不同,为了减少读取时间,需要在对整页数据进行纠错之前,需要判断当前所选取的偏移电压集是否正确。因此,需要采用当前的偏移电压集来对当前目标页中一部分数据(作为原始待验证数据)进行验证,依次判断当前的纠错电压集是否可用。Specifically, since the same page of data can basically use the same offset voltage to complete the error correction operation, but different pages of data may require different offset voltages, in order to reduce the reading time, it is necessary to determine whether the currently selected offset voltage set is correct before correcting the entire page of data. Therefore, it is necessary to use the current offset voltage set to verify a portion of the data in the current target page (as the original data to be verified), and then determine whether the current error correction voltage set is available.
在一些实施方式的数据获取方法中,如图2所示,基于多个偏移电压值下读取到的多个原始待验证数据,对纠错电压集进行验证,包括:In some embodiments of the data acquisition method, as shown in FIG. 2 , based on a plurality of original to-be-verified data read at a plurality of offset voltage values, the error correction voltage set is verified, including:
S211,分别采用主偏电压值、左偏电压值和右偏电压值读取目标页中的原始待验证数据,对应得到主偏验证数据、左偏验证数据和右偏验证数据。S211 , respectively using the main bias voltage value, the left bias voltage value and the right bias voltage value to read the original data to be verified in the target page, and correspondingly obtaining the main bias verification data, the left bias verification data and the right bias verification data.
S212,基于主偏验证数据、左偏验证数据和右偏验证数据对纠错电压集进行验证。S212, verifying the error correction voltage set based on the main bias verification data, the left bias verification data, and the right bias verification data.
具体地,若原始待验证数据纠错通过,则表示当前选取的偏移电压集是可用的,则可使用该偏移电压集对当前目标页中的所有数据进行纠错,若原始待验证数据纠错失败,则表示当前选取的偏移电压集不可用,需要重新获取新的偏移电压集来对当前的目标页进行纠错。本实施方式对每页进行纠错前先对当前目标页中部分数据进行纠错,以判断当前选取的偏移电压集是否验证通过,以及时更新偏移电压集。Specifically, if the original data to be verified passes error correction, it means that the currently selected offset voltage set is available, and the offset voltage set can be used to correct all data in the current target page. If the original data to be verified fails to be corrected, it means that the currently selected offset voltage set is not available, and a new offset voltage set needs to be obtained to correct the current target page. In this embodiment, before correcting each page, some data in the current target page is corrected to determine whether the currently selected offset voltage set has passed verification, so as to update the offset voltage set in time.
S310,当纠错电压集验证通过时,基于纠错电压集读取硬盘闪存中目标页的原始数据,其中,原始待验证数据为原始数据中的部分数据;并将读取到的多个原始偏移数据存放至不同的缓存区中,其中,每一偏移电压值下读取的原始偏移数据放置在同一缓存区内。S310, when the error correction voltage set verification passes, the original data of the target page in the hard disk flash memory is read based on the error correction voltage set, wherein the original data to be verified is part of the original data; and the read multiple original offset data are stored in different cache areas, wherein the original offset data read under each offset voltage value is placed in the same cache area.
具体地,将硬盘闪存中存储的数据称作原始数据,以不同的偏移电压去读取原始数据,将读取到的数据作为原始偏移数据,之所以区分原始数据和原始偏移数据这是因为存储的数据和读取的数据并不一定是相同的。由于每次读取的数据数量较多,因此,会存在部分数据出错的情况,所以才需要进行多种电压去读取,以不同的电压去读取会得到不同的数据,然后根据每种电压得到的原始偏移数据进行纠错。为了提高读取效率,本实施方式不再按照传统方式将原始数据分成多个子部分,然后每次只读取其中一个子部分然后再对读取到的子部分进行纠错,依次循环,直至所有原始数据均纠错完成。例如,若只需要将16K大小的原始数据进行纠错,若传统的方式为每次以1K大小进行读取再纠错,则需要读取16次。若按照本实施方式,只需要一次性将16K的数据读取完放入缓存区,并将不同的原始偏移数据存放至不同的缓存区中,明显本实施方式读取次数大大降低。Specifically, the data stored in the hard disk flash memory is called raw data, and the raw data is read with different offset voltages, and the read data is used as the raw offset data. The reason for distinguishing raw data and raw offset data is that the stored data and the read data are not necessarily the same. Since the amount of data read each time is large, there will be errors in some data, so it is necessary to read with multiple voltages, and different data will be obtained by reading with different voltages, and then error correction is performed according to the raw offset data obtained by each voltage. In order to improve the reading efficiency, this embodiment no longer divides the raw data into multiple sub-parts according to the traditional method, and then only reads one of the sub-parts each time and then corrects the errors of the read sub-parts, and cycles in sequence until all the raw data are corrected. For example, if only 16K raw data needs to be corrected, if the traditional method is to read and correct the errors with 1K each time, it needs to be read 16 times. If according to this embodiment, it is only necessary to read 16K data once and put it into the cache area, and store different raw offset data in different cache areas. Obviously, the number of reads in this embodiment is greatly reduced.
需要注意的是,缓存和闪存不同,从闪存读取数据的时间远大于从缓存区读取的时间,因此,将原始偏移数据放至缓存区后,再从缓存区读取数据进行纠错会更快。It should be noted that cache is different from flash memory. The time to read data from flash memory is much longer than the time to read from cache. Therefore, it will be faster to put the original offset data in the cache and then read the data from the cache for error correction.
在一些实施方式的数据获取方法中,纠错电压集包括主偏电压值、左偏电压值和右偏电压值,原始偏移数据包括原始主偏数据、原始左偏数据和原始右偏数据;基于纠错电压集读取硬盘闪存中目标页的原始数据,并将读取到的多种原始偏移数据存放至不同的缓存区,包括:In some embodiments of the data acquisition method, the error correction voltage set includes a main bias voltage value, a left bias voltage value, and a right bias voltage value, and the original offset data includes original main bias data, original left bias data, and original right bias data; the original data of the target page in the hard disk flash memory is read based on the error correction voltage set, and the read multiple original offset data are stored in different cache areas, including:
分别基于主偏电压值、左偏电压值和右偏电压值读取目标页的原始数据,对应得到原始主偏数据、原始左偏数据和原始右偏数据。The original data of the target page is read based on the main bias voltage value, the left bias voltage value and the right bias voltage value, respectively, to obtain original main bias data, original left bias data and original right bias data accordingly.
具体地,纠错电压集包括但不限于主偏电压值、左偏电压值和右偏电压值,主偏电压值为读取原始数据的基准电压,左偏电压值和右偏电压值均由基于主偏电压值进行上下浮动得到。另外,同一个纠错电压集中可包括多个左偏电压值和/或多个右偏电压值,这里不做限制。Specifically, the error correction voltage set includes but is not limited to a main bias voltage value, a left bias voltage value, and a right bias voltage value. The main bias voltage value is a reference voltage for reading original data, and the left bias voltage value and the right bias voltage value are both obtained by floating up and down based on the main bias voltage value. In addition, the same error correction voltage set may include multiple left bias voltage values and/or multiple right bias voltage values, which are not limited here.
在一些实施方式的数据获取方法中,基于主偏验证数据、左偏验证数据和右偏验证数据对纠错电压集进行验证,包括:In some embodiments of the data acquisition method, verifying the error correction voltage set based on the main bias verification data, the left bias verification data, and the right bias verification data includes:
当主偏验证数据、左偏验证数据或右偏验证数据的误码率不属于第二预设范围时,则确认纠错电压集验证通过。When the bit error rate of the main bias verification data, the left bias verification data or the right bias verification data does not belong to the second preset range, it is confirmed that the error correction voltage set verification has passed.
当主偏验证数据、左偏验证数据和右偏验证数据的误码率均属于第二预设范围时,则确认纠错电压集验证未通过。When the bit error rates of the main bias verification data, the left bias verification data, and the right bias verification data all belong to the second preset range, it is confirmed that the error correction voltage set verification has failed.
具体地,第二预设范围为误码率不通过的范围,例如若第二预设范围为不小于30%,若主偏验证数据、左偏验证数据或右偏验证数据的误码率均不小于30%,即误码率大于等于30%,则使用该纠错电压集导致误码率太高,表示当前的纠错电压集验证未通过。在主偏验证数据、左偏验证数据或右偏验证数据中只要任意一个的误码率不属于第二预设范围时,则表示当前纠错电压集中存在一个偏移验证数据(例如主偏验证数据、左偏验证数据或右偏验证数据)能使得读取原始数据的正确率达到要求,即表示当前的纠错电压集验证通过。Specifically, the second preset range is a range where the bit error rate fails. For example, if the second preset range is not less than 30%, if the bit error rates of the main bias verification data, the left bias verification data, or the right bias verification data are not less than 30%, that is, the bit error rate is greater than or equal to 30%, then the use of the error correction voltage set results in a too high bit error rate, indicating that the current error correction voltage set verification has failed. As long as the bit error rate of any one of the main bias verification data, the left bias verification data, or the right bias verification data does not fall within the second preset range, it means that there is an offset verification data (such as the main bias verification data, the left bias verification data, or the right bias verification data) in the current error correction voltage set that can make the accuracy of reading the original data meet the requirements, that is, it means that the current error correction voltage set verification has passed.
需要说明的是,之所以选择多种偏移电压进行纠错,这是因为以当前偏移电压读取的数据不成功,即误码率不通过时,可利用其它偏移电压读取成功的数据来进行后续的解码操作。所以,当第一种偏移电压读取的数据不成功时,会判断第二种偏移电压读取的数据是否成功,直至获得成功的数据为止。It should be noted that the reason why multiple offset voltages are selected for error correction is that when the data read with the current offset voltage is unsuccessful, that is, when the bit error rate does not pass, the data successfully read with other offset voltages can be used for subsequent decoding operations. Therefore, when the data read with the first offset voltage is unsuccessful, it will be determined whether the data read with the second offset voltage is successful, until successful data is obtained.
S410,分别从不同的缓存区中依次获取对应的原始偏移子数据进行纠错,以获取若干个目标数据。S410, obtaining corresponding original offset sub-data from different buffer areas in sequence for error correction to obtain a plurality of target data.
示范性地,若第一缓存区中存储有第一类原始偏移数据、第二缓存区中存储有第二类原始偏移数据和第三缓存区中存储有第三类原始偏移数据,而第一类原始偏移数据包括第一类子数据a、第一类子数据b、…、第一类子数据n;第二类原始偏移数据包括第二类子数据a、第二类子数据b、…、第二类子数据n;第三类原始偏移数据包括第三类子数据a、第三类子数据b、…、第三类子数据n。则第一次获取第一类子数据a、第二类子数据a和第三类子数据a,并通过该三种子数据进行纠错,纠错完后得到对应的目标数据a;再第二次获取第一类子数据b、第二类子数据b和第三类子数据b,并通过该三种子数据进行纠错,纠错完后得到对应的目标数据b;继续依次进行纠错,直至所有的原始偏移数据均纠错完成,并得到所有对应的目标数据。Exemplarily, if the first buffer stores the first type of original offset data, the second buffer stores the second type of original offset data, and the third buffer stores the third type of original offset data, and the first type of original offset data includes the first type of sub-data a, the first type of sub-data b, ..., the first type of sub-data n; the second type of original offset data includes the second type of sub-data a, the second type of sub-data b, ..., the second type of sub-data n; and the third type of original offset data includes the third type of sub-data a, the third type of sub-data b, ..., the third type of sub-data n. Then the first type of sub-data a, the second type of sub-data a, and the third type of sub-data a are acquired for the first time, and error correction is performed through the three types of sub-data, and the corresponding target data a is obtained after the error correction is completed; the first type of sub-data b, the second type of sub-data b, and the third type of sub-data b are acquired for the second time, and error correction is performed through the three types of sub-data, and the corresponding target data b is obtained after the error correction is completed; and the error correction is continued in sequence until all the original offset data are corrected and all the corresponding target data are obtained.
在一些实施方式的数据获取方法中,如图3所示,每个原始偏移数据分成若干个相同大小的原始偏移子数据,每个原始偏移子数据均对应原始数据的一子部分,相同子部分对应的所有原始偏移子数据相互对应;原始偏移子数据包括原始主偏子数据、原始左偏子数据和原始右偏子数据;分别从不同的缓存区中依次获取对应的原始偏移子数据进行纠错,以获取若干个目标数据,包括:In the data acquisition method of some embodiments, as shown in FIG3 , each original offset data is divided into a plurality of original offset sub-data of the same size, each original offset sub-data corresponds to a sub-portion of the original data, and all original offset sub-data corresponding to the same sub-portion correspond to each other; the original offset sub-data include original main offset sub-data, original left offset sub-data, and original right offset sub-data; the corresponding original offset sub-data are sequentially acquired from different buffer areas for error correction to acquire a plurality of target data, including:
S411,分别从不同的缓存区中依次获取相互对应的原始偏移子数据进行纠错。S411, sequentially obtaining corresponding original offset sub-data from different buffer areas for error correction.
示范性地,若第一缓存区中存储有原始主偏数据、第二缓存区中存储有原始左偏数据和第三缓存区中存储有原始右偏数据,而原始主偏数据包括原始主偏子数据a、原始主偏子数据b、…、原始主偏子数据n;原始左偏数据包括原始左偏子数据a、原始左偏子数据b、…、原始左偏子数据n;原始右偏数据包括原始右偏子数据a、原始右偏子数据b、…、原始右偏子数据n。若原始主偏子数据、原始左偏子数据和原始右偏子数据分别为不同的偏移电压值对原始数据中相同的子部分读取得到,则该原始主偏子数据、原始左偏子数据和原始右偏子数据相互对应。例如,若原始主偏子数据a、原始左偏子数据a和原始右偏子数据a分别由不同的电压对同一个子部分读取得到,则原始主偏子数据a、原始左偏子数据a和原始右偏子数据a三者相互对应。其中,纠错的过程即判断每个原始偏移子数据的误码率的过程,纠错的目的是为了获取目标数据。Exemplarily, if the original main bias data is stored in the first buffer area, the original left bias data is stored in the second buffer area, and the original right bias data is stored in the third buffer area, and the original main bias data includes original main bias sub-data a, original main bias sub-data b, ..., original main bias sub-data n; the original left bias data includes original left bias sub-data a, original left bias sub-data b, ..., original left bias sub-data n; the original right bias data includes original right bias sub-data a, original right bias sub-data b, ..., original right bias sub-data n. If the original main bias sub-data, the original left bias sub-data, and the original right bias sub-data are read from the same sub-portion of the original data by different offset voltage values, then the original main bias sub-data, the original left bias sub-data, and the original right bias sub-data correspond to each other. For example, if the original main bias sub-data a, the original left bias sub-data a, and the original right bias sub-data a are read from the same sub-portion by different voltages, then the original main bias sub-data a, the original left bias sub-data a, and the original right bias sub-data a correspond to each other. The error correction process is the process of determining the bit error rate of each original offset sub-data, and the purpose of error correction is to obtain target data.
S412,当原始主偏子数据的误码率不属于第一预设范围时,则将原始主偏子数据作为目标数据。S412: When the bit error rate of the original main bias sub-data does not fall within the first preset range, the original main bias sub-data is used as the target data.
S413,当原始主偏子数据的误码率属于第一预设范围,且原始左偏子数据的误码率不属于第一预设范围时,则将原始左偏子数据作为目标数据。S413, when the bit error rate of the original main bias sub-data belongs to the first preset range, and the bit error rate of the original left bias sub-data does not belong to the first preset range, the original left bias sub-data is used as the target data.
S414,当原始主偏子数据和原始左偏子数据的误码率均属于第一预设范围,且原始右偏子数据的误码率不属于第一预设范围时,则将原始右偏子数据作为目标数据。S414, when the bit error rates of the original main bias sub-data and the original left bias sub-data both belong to the first preset range, and the bit error rate of the original right bias sub-data does not belong to the first preset range, the original right bias sub-data is used as the target data.
S415,当原始主偏子数据、原始左偏子数据和原始右偏子数据的误码率均属于第一预设范围时,则确认纠错失败。S415, when the bit error rates of the original main bias sub-data, the original left bias sub-data and the original right bias sub-data all belong to the first preset range, it is confirmed that the error correction has failed.
具体地,按顺序依次对相互对应的原始主偏子数据、原始左偏子数据和原始右偏子数据的误码率进行判断,以获得对应的目标数据。Specifically, the bit error rates of the original main bias sub-data, the original left bias sub-data and the original right bias sub-data corresponding to each other are judged in sequence to obtain the corresponding target data.
示范性地,若相互对应的原始主偏子数据c、原始左偏子数据c和原始右偏子数据c的误码率分别为10%、8%和1%,而第一预设范围为不小于2%,则有限判断原始主偏子数据c的误码率为10%属于第一预设范围,继续判断原始左偏子数据c的误码率为8%,发现依旧属于第一预设范围,继续判断原始右偏子数据c的误码率为1%不属于第一预设范围,则将原始右偏子数据作为对应原始数据的子部分的目标数据,继续获取下一个原始数据的子部分的目标数据,直至获取所有的目标数据为止。当然,上述的判断顺序仅仅只是一种示例,还可以为其它的顺序,这里不做限制,例如顺序可以为原始左偏子数据、原始主偏子数据和原始右偏子数据等。Exemplarily, if the bit error rates of the corresponding original main bias sub-data c, original left bias sub-data c and original right bias sub-data c are 10%, 8% and 1% respectively, and the first preset range is not less than 2%, then it is limited to judge that the bit error rate of the original main bias sub-data c is 10% and belongs to the first preset range, and continue to judge that the bit error rate of the original left bias sub-data c is 8%, and it is found that it still belongs to the first preset range, and continue to judge that the bit error rate of the original right bias sub-data c is 1% and does not belong to the first preset range, then the original right bias sub-data is used as the target data of the sub-portion of the corresponding original data, and continue to obtain the target data of the next sub-portion of the original data until all the target data are obtained. Of course, the above judgment order is only an example, and it can also be other orders, which are not limited here. For example, the order can be original left bias sub-data, original main bias sub-data and original right bias sub-data, etc.
在一些实施方式中,数据获取方法还包括:In some embodiments, the data acquisition method further comprises:
在对原始偏移子数据进行纠错时,还基于纠错电压集读取硬盘闪存中下一目标页的原始数据,以获取下一目标页对应的目标数据,直至获取完所有目标页的目标数据。When correcting the original offset sub-data, the original data of the next target page in the hard disk flash memory is also read based on the error correction voltage set to obtain the target data corresponding to the next target page until the target data of all target pages are obtained.
具体地,上述提到的过程只是对同一目标页获取目标数据的过程,在实际应用中,经常会对多个目标页进行获取目标数据,并将目标数据进行解码。因此,本实施方式提出对当前目标页进行纠错时,还会同时读取下一目标页的原始数据,并将读取该原始数据的多种原始偏移数据存储至不同的缓存区,这样大大节省读取时间。Specifically, the above-mentioned process is only a process of obtaining target data for the same target page. In practical applications, target data is often obtained for multiple target pages and the target data is decoded. Therefore, this embodiment proposes that when correcting the error of the current target page, the original data of the next target page will also be read at the same time, and the multiple original offset data of the original data will be stored in different buffer areas, which greatly saves the reading time.
在一些实施方式中,数据获取方法还包括:In some embodiments, the data acquisition method further comprises:
当纠错失败或纠错电压集验证未通过时,回到获取硬盘的纠错电压集的步骤,并将获取的新电压值作为纠错电压集。When the error correction fails or the error correction voltage set verification fails, the process returns to the step of obtaining the error correction voltage set of the hard disk, and uses the obtained new voltage value as the error correction voltage set.
具体地,纠错失败指的是从不同的缓存区中获取相互对应的原始偏移子数据进行纠错时出现的纠错失败结果。其中,纠错失败即代表纠错电压集验证未通过。纠错电压集验证未通过一般出现在上述方案的两种场景下,第一种是在基于原始待验证数据对纠错电压集进行验证时的过程;第二种是在从不同的缓存区中依次获取相互对应的原始偏移子数据进行纠错的过程中。不管在何种场景下,只要出现纠错电压集验证未通过或纠错失败的情况,则均需要回到最初的获取硬盘的纠错电压集的步骤,以获取新的纠错电压集,再根据新的纠错电压集再次重复上述步骤。Specifically, error correction failure refers to the error correction failure result that occurs when the corresponding original offset sub-data are obtained from different cache areas for error correction. Among them, error correction failure means that the error correction voltage set verification has not passed. Failure of error correction voltage set verification generally occurs in two scenarios of the above scheme. The first is the process of verifying the error correction voltage set based on the original data to be verified; the second is the process of sequentially obtaining the corresponding original offset sub-data from different cache areas for error correction. Regardless of the scenario, as long as the error correction voltage set verification fails or error correction fails, it is necessary to return to the initial step of obtaining the error correction voltage set of the hard disk to obtain a new error correction voltage set, and then repeat the above steps again based on the new error correction voltage set.
需要注意的是,再次读取的目标页不再是之前的目标页,而是从上一个未通过时的原始偏移子数据对应的原始数据的子部分开始取得的新的目标页。例如,若当前目标页有16K原始数据,下一个目标页同样也有16K原始数据,若将每个目标页的原始数据分成8个子部分,每个子部分数据的大小为2K。若在获取当前目标页中的第2个子部分的目标数据时,出现纠错电压集验证未通现象,则需要回到获取硬盘的纠错电压集的步骤,且此时基于新的纠错电压集读取硬盘闪存中新的目标页,如图4所示,该新的目标页由上述的当前目标页后7个子部分和下一个目标页中的第一个子部分组成。It should be noted that the target page read again is no longer the previous target page, but a new target page obtained from the sub-portion of the original data corresponding to the original offset sub-data when the previous one failed. For example, if the current target page has 16K original data, the next target page also has 16K original data. If the original data of each target page is divided into 8 sub-portions, the size of each sub-portion data is 2K. If the error correction voltage set verification fails when obtaining the target data of the second sub-portion in the current target page, it is necessary to return to the step of obtaining the error correction voltage set of the hard disk, and at this time read the new target page in the hard disk flash memory based on the new error correction voltage set. As shown in Figure 4, the new target page consists of the above-mentioned 7 sub-portions after the current target page and the first sub-portion in the next target page.
需要说明的是,上述实施方案中,原始偏移子数据的数据量和原始待验证数据的数据量均小于等于单次可纠正最大数据量。否则,无法单次纠正完,以提高效率。It should be noted that in the above implementation scheme, the data volume of the original offset sub-data and the data volume of the original data to be verified are both less than or equal to the maximum data volume that can be corrected at one time. Otherwise, it is impossible to correct them all at one time to improve efficiency.
本申请实施例提出一种数据获取方法,包括:获取硬盘的纠错电压集,纠错电压集包括多个偏移电压值;基于纠错电压集读取硬盘闪存中目标页的原始数据,并将读取到的多种原始偏移数据存放至不同的缓存区,其中,每种原始偏移数据均对应原始数据;分别从不同的缓存区中依次获取对应的原始偏移子数据进行纠错,以获取若干个目标数据。本申请通过将每一页所有数据按照不同的偏移电压进行一次性读取,在后续纠错之前无需再多次读取每页中不同的数据,而是直接从缓存区中获取对应数据进行纠错,从而节省大量时间。The embodiment of the present application proposes a data acquisition method, including: obtaining an error correction voltage set of a hard disk, the error correction voltage set including multiple offset voltage values; reading the original data of a target page in the flash memory of the hard disk based on the error correction voltage set, and storing the read multiple original offset data in different cache areas, wherein each original offset data corresponds to the original data; respectively obtaining the corresponding original offset sub-data from different cache areas in sequence for error correction to obtain a number of target data. The present application reads all the data of each page at one time according to different offset voltages, and before subsequent error correction, there is no need to read different data in each page multiple times, but directly obtains the corresponding data from the cache area for error correction, thereby saving a lot of time.
本申请的另一实施例还提出一种数据获取系统500,如图5所示,数据获取系统500包括:Another embodiment of the present application further provides a data acquisition system 500. As shown in FIG5 , the data acquisition system 500 includes:
获取单元510,用于获取硬盘的纠错电压集,所述纠错电压集包括多个偏移电压值。The acquisition unit 510 is used to acquire an error correction voltage set of the hard disk, where the error correction voltage set includes a plurality of offset voltage values.
验证单元520,用于基于所述多个偏移电压值下读取到的多个原始待验证数据,对所述纠错电压集进行验证。The verification unit 520 is used to verify the error correction voltage set based on the multiple original to-be-verified data read under the multiple offset voltage values.
读存单元530,用于当所述纠错电压集验证通过时,基于所述纠错电压集读取所述硬盘闪存中目标页的原始数据,其中,所述原始待验证数据为所述原始数据中的部分数据;并将读取到的多个原始偏移数据存放至不同的缓存区中,其中,每一所述偏移电压值下读取的原始偏移数据放置在同一缓存区内。The read storage unit 530 is used to read the original data of the target page in the hard disk flash memory based on the error correction voltage set when the error correction voltage set is verified, wherein the original data to be verified is part of the original data; and store the read multiple original offset data in different cache areas, wherein the original offset data read under each offset voltage value is placed in the same cache area.
纠错单元540,用于分别从所述不同的缓存区中依次获取对应的原始偏移子数据进行纠错,以获取若干个目标数据。The error correction unit 540 is used to sequentially obtain the corresponding original offset sub-data from the different buffer areas for error correction to obtain a plurality of target data.
本申请的另一实施例还提出一种硬盘,包括存储单元和处理单元,存储单元中存储有计算机程序,处理单元通过调用存储单元中存储的计算机程序,执行上述的数据获取方法的步骤。Another embodiment of the present application further proposes a hard disk, including a storage unit and a processing unit, wherein a computer program is stored in the storage unit, and the processing unit executes the steps of the above-mentioned data acquisition method by calling the computer program stored in the storage unit.
本申请的另一实施例还提出一种计算机可读存储介质,计算机可读存储介质存储有计算机程序,计算机程序适于处理器进行加载,以执行上述的数据获取方法的步骤。Another embodiment of the present application further provides a computer-readable storage medium, which stores a computer program. The computer program is suitable for being loaded by a processor to execute the steps of the above-mentioned data acquisition method.
可以理解,本实施例的方法步骤对应于上述实施例中的数据获取方法,其中,上述数据获取方法的可选项同样适用于本实施例,这里不再重复描述。It can be understood that the method steps of this embodiment correspond to the data acquisition method in the above embodiment, wherein the options of the above data acquisition method are also applicable to this embodiment and will not be described repeatedly here.
在本申请所提供的几个实施例中,应该理解到,所揭露的装置和方法,也可以通过其它的方式实现。以上所描述的装置实施例仅仅是示意性的,例如,附图中的流程图和结构图显示了根据本申请的多个实施例的装置、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上,流程图或框图中的每个方框可以代表一个模块、程序段或代码的一部分,模块、程序段或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意,在作为替换的实现方式中,方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如,两个连续的方框实际上可以基本并行地执行,它们有时也可以按相反的顺序执行,这依所涉及的功能而定。也要注意的是,结构图和/或流程图中的每个方框、以及结构图和/或流程图中的方框的组合,可以用执行规定的功能或动作的专用的基于硬件的系统来实现,或者可以用专用硬件与计算机指令的组合来实现。In several embodiments provided in the present application, it should be understood that the disclosed devices and methods can also be implemented in other ways. The device embodiments described above are merely schematic. For example, the flowcharts and structure diagrams in the accompanying drawings show the possible architecture, functions and operations of the devices, methods and computer program products according to multiple embodiments of the present application. In this regard, each box in the flowchart or block diagram can represent a module, a program segment or a part of the code, and a part of the module, program segment or code contains one or more executable instructions for implementing the specified logical functions. It should also be noted that in an alternative implementation, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two consecutive boxes can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the structure diagram and/or the flow diagram, and the combination of boxes in the structure diagram and/or the flow diagram, can be implemented with a dedicated hardware-based system that performs a specified function or action, or can be implemented with a combination of dedicated hardware and computer instructions.
另外,在本申请各个实施例中的各功能模块或单元可以集成在一起形成一个独立的部分,也可以是各个模块单独存在,也可以两个或更多个模块集成形成一个独立的部分。In addition, the functional modules or units in the various embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.
所述功能如果以软件功能模块的形式实现并作为独立的产品销售或使用时,可以存储在一个计算机可读取存储介质中。基于这样的理解,本申请的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的部分可以以软件产品的形式体现出来,该计算机软件产品存储在一个存储介质中,包括若干指令用以使得一台计算机设备(可以是智能手机、个人计算机、服务器、或者网络设备等)执行本申请各个实施例所述方法的全部或部分步骤。而前述的存储介质包括:U盘、移动硬盘、只读存储器(ROM,Read-Only Memory)、随机存取存储器(RAM,Random Access Memory)、磁碟或者光盘等各种可以存储程序代码的介质。If the function is implemented in the form of a software function module and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application can be essentially or partly embodied in the form of a software product that contributes to the prior art. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a smart phone, a personal computer, a server, or a network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, and other media that can store program codes.
以上所述,仅为本申请的具体实施方式,但本申请的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本申请揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本申请的保护范围之内。The above description is only a specific implementation mode of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be covered by the protection scope of the present application.
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