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CN118443987A - Multi-probe arrangement method, device, equipment and storage medium - Google Patents

Multi-probe arrangement method, device, equipment and storage medium Download PDF

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Publication number
CN118443987A
CN118443987A CN202410416570.2A CN202410416570A CN118443987A CN 118443987 A CN118443987 A CN 118443987A CN 202410416570 A CN202410416570 A CN 202410416570A CN 118443987 A CN118443987 A CN 118443987A
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CN
China
Prior art keywords
probes
probe
preset
wafer
row
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Application number
CN202410416570.2A
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Chinese (zh)
Inventor
林荣威
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Silicon Electric Semiconductor Equipment Shenzhen Co ltd
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Silicon Electric Semiconductor Equipment Shenzhen Co ltd
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Priority to CN202410416570.2A priority Critical patent/CN118443987A/en
Publication of CN118443987A publication Critical patent/CN118443987A/en
Pending legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks
    • G01R31/2887—Features relating to contacting the IC under test, e.g. probe heads; chucks involving moving the probe head or the IC under test; docking stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Geometry (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The application discloses a multi-probe arrangement method, a device, equipment and a storage medium, and belongs to the technical field of semiconductors. The method comprises the steps of obtaining the coordinate position of a reference probe by aligning a needle alignment datum point with the center of a view field of a camera, wherein the reference probe is one probe among a plurality of probes, and the needle alignment datum point is the position of the reference probe; based on the preset row and column values of the crystal grains in the wafer and the preset longitudinal steps and preset row intervals among the plurality of probes, the coordinate positions of other first probes except the reference probe are determined, and it can be understood that the preset longitudinal steps and the preset row intervals exist between the first probe and the reference probe, and an operator can arrange the probes based on the coordinate positions of the plurality of probes, so that the condition of firing pins in the wafer testing process can be avoided.

Description

Multi-probe arrangement method, device, equipment and storage medium
Technical Field
The present application relates to the field of semiconductor technologies, and in particular, to a method, an apparatus, a device, and a storage medium for arranging multiple probes.
Background
Currently, the size of a single die in an SMD LED (Surface Mounted DEVICE LIGHT EMITTING Diode) wafer is gradually miniaturized, specifically, the size has reached a length of 0.08 inch and a width of 0.04 inch (specification of 0804); since the LED (LIGHT EMITTING Diode) packaging process has certain requirements on the range of the die electrode (PAD, solder joint) where the probe contacts the unit under test, even if the probe is arranged in a dense array, accurate needle insertion is still required in the range of the die electrode.
However, the probe is generally manufactured by precision instruments from four basic components of a needle head, a needle tail, a spring and an outer tube, wherein the diameter L2 of the outer tube is 28mm, the diameter range D2 is 0.5mm, and the diameter D1 of the needle head is 1 micrometer as shown in figure 1; it follows that there is a risk of firing pins if SMD LED wafers of below 0804 are tested with conventionally arranged probes.
Disclosure of Invention
The application mainly aims to provide a multi-probe arrangement method, a device, equipment and a storage medium, and aims to solve the problem of firing pins in the wafer test process.
In order to achieve the above object, the present application provides a multi-probe arrangement method, comprising the steps of:
aligning a needle alignment datum point with the center of a view field of a camera to obtain a coordinate position of a reference probe, wherein the reference probe is one probe of a plurality of probes, and the needle alignment datum point is the position of the reference probe;
And determining the coordinate positions of other first probes except the reference probe based on the preset row and column values of the crystal grains in the wafer, the preset longitudinal step distance and the preset row interval among the plurality of probes, so that an operator can arrange the probes based on the coordinate positions of the plurality of probes.
Optionally, the step of determining the coordinate positions of the first probes except the reference probe based on the preset row-column value of the die in the wafer, the preset longitudinal step distance and the preset line interval between the plurality of probes comprises the following steps:
the coordinate position of the first probe is determined based on a preset rank value of the die in the wafer, a preset longitudinal step distance and a preset row interval between a plurality of probes, and a first relative direction between the first probe and the reference probe.
Optionally, after the step of determining the coordinate position of the first probe except the reference probe based on the preset row-column value of the die in the wafer, the preset longitudinal step distance and the preset line interval between the plurality of probes, the method further comprises:
Determining a first row value corresponding to a preset main needle in a wafer based on a row value of a preset mark point of the wafer and a target relative direction of the preset main needle at the preset mark point, wherein the preset main needle is one of a plurality of probes;
Determining a second row-column value corresponding to other second probes except the preset main needle in the wafer based on the first row-column value;
and performing probe testing on the wafer based on the target relative direction, the first rank value and the second rank value.
Optionally, the step of performing a probe test on the wafer based on the target relative direction, the first rank value and the second rank value includes:
determining a grain to be tested based on the target relative direction, the first rank value and the second rank value;
and moving the crystal grain to be tested to the lower part of the probes through a probe station, aligning the crystal grain to be tested with the probes, and testing the crystal grain to be tested through the probes.
Optionally, the step of determining the die to be tested based on the target relative direction, the first rank value and the second rank value includes:
And determining the grain to be tested based on the target relative direction, the first rank value, the second rank value, and a preset longitudinal step distance and a preset row interval between the plurality of probes.
Optionally, the step of determining, based on the first rank value, a second rank value corresponding to a second probe in the wafer, where the second probe is other than the preset master probe, includes:
And determining a second rank value corresponding to other second probes except the preset main probe in the wafer based on the first rank value, the preset arrangement sequence of the preset probes in the plurality of probes, the second relative direction between the second probes and the preset probes, and the preset longitudinal step distance and the preset row interval between the plurality of probes.
In addition, in order to achieve the above object, the present application also provides a multi-probe arrangement device, including:
The position determining module is used for aligning a needle alignment reference point with the center of a field of view of the camera to obtain the coordinate position of a reference probe, wherein the reference probe is one probe among a plurality of probes, and the needle alignment reference point is the position of the reference probe;
the probe arrangement module is used for determining the coordinate positions of other first probes except the reference probe based on the preset row and column values of the crystal grains in the wafer, the preset longitudinal step distance and the preset row interval among the probes, so that an operator can arrange the probes based on the coordinate positions of the probes.
In addition, to achieve the above object, the present application also provides an apparatus comprising: the system comprises a memory, a processor and a multi-probe arrangement program stored on the memory and capable of running on the processor, wherein the multi-probe arrangement program is configured to realize the steps of the multi-probe arrangement method.
In addition, in order to achieve the above object, the present application also provides a computer-readable storage medium having stored thereon a multi-probe arrangement program which, when executed by a processor, implements the steps of the multi-probe arrangement method as described above.
Furthermore, to achieve the above object, the present invention also provides a computer program product comprising a multi-probe arrangement program which, when executed by a processor, implements the steps of the multi-probe arrangement method as described above.
The method comprises the steps of obtaining the coordinate position of a reference probe by aligning a needle alignment datum point with the center of a view field of a camera, wherein the reference probe is one probe among a plurality of probes, and the needle alignment datum point is the position of the reference probe; based on the preset row and column values of the crystal grains in the wafer and the preset longitudinal steps and preset row intervals among the plurality of probes, the coordinate positions of other first probes except the reference probe are determined, and it can be understood that the preset longitudinal steps and the preset row intervals exist between the first probe and the reference probe, and an operator can arrange the probes based on the coordinate positions of the plurality of probes, so that the condition of firing pins in the wafer testing process can be avoided.
Drawings
FIG. 1 is a schematic diagram of a probe structure of a multi-probe arrangement method of the present application;
FIG. 2 is a schematic view of a first flow chart of a first embodiment of a multi-probe arrangement method according to the present application;
FIG. 3 is a schematic view of a first scenario illustrating a first embodiment of a multi-probe arrangement method according to the present application;
FIG. 4 is a schematic diagram of a second scenario of the first embodiment of the multi-probe arrangement method of the present application;
FIG. 5 is a schematic view of a third scenario of the first embodiment of the multi-probe arrangement method of the present application;
FIG. 6 is a second flow chart of a second embodiment of the method for arranging multiple probes according to the present application;
FIG. 7 is a schematic diagram of a fourth scenario of a second embodiment of a multi-probe arrangement method of the present application;
FIG. 8 is a block diagram illustrating an embodiment of a multi-probe arrangement of the present application;
Fig. 9 is a schematic device structure diagram of a hardware running environment according to an embodiment of the present application.
The achievement of the objects, functional features and advantages of the present application will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the application. Rather, they are merely examples of apparatus and methods consistent with aspects of the application as detailed in the accompanying claims.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, the element defined by the phrase "comprising one … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element, and furthermore, elements having the same name in different embodiments of the application may have the same meaning or may have different meanings, the particular meaning of which is to be determined by its interpretation in this particular embodiment or by further combining the context of this particular embodiment.
It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, these information should not be limited by these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope herein. The word "if" as used herein may be interpreted as "at … …" or "at … …" or "in response to a determination" depending on the context. Furthermore, as used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context indicates otherwise. It will be further understood that the terms "comprises," "comprising," "includes," and/or "including" specify the presence of stated features, steps, operations, elements, components, items, categories, and/or groups, but do not preclude the presence, presence or addition of one or more other features, steps, operations, elements, components, items, categories, and/or groups. The terms "or", "and/or", "including at least one of", and the like, as used herein, may be construed as inclusive, or mean any one or any combination. For example, "including at least one of: A. b, C "means" any one of the following: a, A is as follows; b, a step of preparing a composite material; c, performing operation; a and B; a and C; b and C; a and B and C ", again as examples," A, B or C "or" A, B and/or C "means" any of the following: a, A is as follows; b, a step of preparing a composite material; c, performing operation; a and B; a and C; b and C; a and B and C). An exception to this definition will occur only when a combination of elements, functions, steps or operations are in some way inherently mutually exclusive.
It should be understood that, although the steps in the flowcharts in the embodiments of the present application are shown in order as indicated by the arrows, these steps are not necessarily performed in order as indicated by the arrows. The steps are not strictly limited in order and may be performed in other orders, unless explicitly stated herein. Moreover, at least some of the steps in the figures may include multiple sub-steps or stages that are not necessarily performed at the same time, but may be performed at different times, the order of their execution not necessarily occurring in sequence, but may be performed alternately or alternately with other steps or at least a portion of the other steps or stages.
The words "if", as used herein, may be interpreted as "at … …" or "at … …" or "in response to a determination" or "in response to a detection", depending on the context. Similarly, the phrase "if determined" or "if detected (stated condition or event)" may be interpreted as "when determined" or "in response to determination" or "when detected (stated condition or event)" or "in response to detection (stated condition or event), depending on the context.
It should be noted that, in this document, step numbers such as S10 and S20 are adopted, and the purpose of the present application is to more clearly and briefly describe the corresponding content, and not to constitute a substantial limitation on the sequence, and those skilled in the art may execute S20 first and then execute S10 when implementing the present application, which is within the scope of protection of the present application.
In the following description, suffixes such as "module", "part" or "unit" for representing elements are used only for facilitating the description of the present application, and have no specific meaning per se. Thus, "module," "component," or "unit" may be used in combination.
Referring to fig. 2, fig. 2 is a flow chart of a first embodiment of the arrangement method of multiple probes according to the present application.
In a first embodiment, the arrangement method of the multiple probes includes the following steps:
S10: aligning a needle alignment datum point with the center of a view field of a camera to obtain a coordinate position of a reference probe, wherein the reference probe is one probe of a plurality of probes, and the needle alignment datum point is the position of the reference probe;
It should be noted that, the execution body of the multi-probe arrangement method of the present embodiment is a multi-probe arrangement device, and the multi-probe arrangement device belongs to a multi-probe arrangement apparatus.
Currently, the size of individual grains in SMD LED wafers is gradually miniaturized, specifically, the size has reached a length of 0.08 inches and a width of 0.04 inches (specification 0804); because the LED packaging technology has certain requirements on the range of the probe contacting with the die electrode (PAD, welding spot) of the unit to be tested, even if the probe is arranged in a dense array, accurate needle insertion is still required in the range of the die electrode; however, the probe is generally manufactured by precision instruments from four basic components of a needle head, a needle tail, a spring and an outer tube, wherein the diameter L2 of the outer tube is 28mm, the diameter range D2 is 0.5mm, and the diameter D1 of the needle head is 1 micrometer as shown in figure 1; it follows that there is a risk of firing pins if SMD LED wafers of below 0804 are tested with conventionally arranged probes.
The probes are used for realizing precise connection between electrode pins of the SMD LED crystal grain and the testing machine, namely, signals can be transmitted to the testing machine through the probes, so that detection of indexes such as photoelectric parameters, functions and aging of the SMD LED crystal grain is realized, specifically, in the testing process, the needle bases are used for fixing the probes and realizing signal transmission, as shown in fig. 3, if sixteen probes are required for testing, sixteen needle base arrays are required to be arranged, and the risk of the firing pins also exists due to mutual limitation among the needle bases; it will be appreciated that there is a risk of the probes firing in relation to each other when the probes and the needle mount are used in combination due to the size of the probes themselves and the limited space between the needle mounts.
In the probe arrangement process, the arrangement device of the multiple probes is matched with a vision system and a needle insertion control system, wherein the vision system consists of a horizontal motion platform consisting of a servo motor, a wafer carrying platform, a camera, a lens and a light source; the needle insertion control system consists of a probe and a needle seat; the vision system is used for aligning and scanning a unit to be tested (a wafer), and is also used for acquiring sequencing array data and obtaining a MAPPING array chart (comprising coordinate information of each crystal grain in the wafer) for walking.
The horizontal motion platform and the wafer bearing platform are mainly used for bearing the displacement of a unit to be tested (wafer) so as to realize testing, and the needle insertion control system is used for actively detecting each crystal grain, so that a probe needle head is contacted with an electrode pin of an existing SMD LED crystal grain, and testing of performance parameters such as photoelectricity and the like of the wafer is realized.
Before the probes are manually arranged, the coordinate positions of the plurality of probes need to be determined, in order to improve the processing efficiency, in this embodiment, the coordinate positions of the reference probes are determined first, specifically, the reference probe is one of the plurality of probes, and if the number of the plurality of probes is 9, the reference probe may be a fifth probe that is preset.
In order to determine the coordinate position of the reference probe, the position of the reference probe is taken as a reference point of the alignment needle, and the reference point of the alignment needle is aligned with the center of the field of view of the camera, so as to obtain the coordinate position of the reference probe.
The center of the field of view of the camera is the center point of the visual range which can be captured by the camera in the visual system.
S20: and determining the coordinate positions of other first probes except the reference probe based on the preset row and column values of the crystal grains in the wafer, the preset longitudinal step distance and the preset row interval among the plurality of probes, so that an operator can arrange the probes based on the coordinate positions of the plurality of probes.
It will be appreciated that since the arrangement information of the die in the wafer is known, for example, the row and column value information of the die may be determined based on the above-described MAPPING array map; in order to avoid the risk of the firing pin, in the process of arranging the probes, for example, the probes need to be arranged separately, a preset longitudinal step distance and a preset line interval can be set between every two probes, wherein the preset longitudinal step distance is the distance between two adjacent points on the same horizontal line, the preset longitudinal step distance is set to be at least one column interval, the preset line interval is the distance between two adjacent crystal grains on the same vertical line, and the preset line interval is set to be at least one line interval; the at least one column interval and the at least one row interval correspond to a column interval of the die.
Under the condition that the coordinate positions of the reference probes, the preset row and column values of the crystal grains, the preset longitudinal step distance and the preset line interval are known, the coordinate positions of other first probes except the reference probes can be calculated.
Referring to fig. 5, the reference probe is used as a first probe, the coordinate position of the first probe is SITE (L1), the probes can be arranged with a preset row interval of 1 and a preset column interval of 0, and the coordinate positions (SITE (L1) - (L9)) of the second to ninth probes are respectively obtained; in order to avoid the risk of various strikers, the probes may be arranged with a preset row interval of 1 and a preset column interval of 1, or the like, and specifically, the preset row interval and the preset column interval may be set based on the test requirements.
Specifically, the embodiment of determining the coordinate positions of the first probes except the reference probe based on the preset row-column value of the die in the wafer and the preset longitudinal step distance and the preset line interval among the plurality of probes may be:
the coordinate position of the first probe is determined based on a preset rank value of the die in the wafer, a preset longitudinal step distance and a preset row interval between a plurality of probes, and a first relative direction between the first probe and the reference probe.
It can be understood that if the reference probe is the first probe and the relative direction includes up and down, wherein the up is positive and the down is negative, then the direction of the second probe relative to the first probe is down, and when calculating the coordinate position of the second probe, it is necessary to multiply (-1), so as to calculate the correct coordinate position; if the reference probe is the fifth probe, the direction of the second probe with respect to the fifth probe is upward, and the coordinate position of the second probe needs to be multiplied by 1 when calculating.
The coordinate positions of the reference probe and the coordinate positions of the other first probes except the reference probe can be obtained based on the above mode, namely, the coordinate positions of the plurality of probes are obtained, and an operator performs probe arrangement based on the coordinate positions of the plurality of probes, namely, the operator needs to adjust the probes in the probe card to corresponding positions based on the coordinate positions of the plurality of probes. Because the interval exists between the probes, the problem that the probes are scratched easily in the process by operators is avoided, the loss of the probes and products is reduced, and the operation convenience of users is greatly improved.
In the embodiment, the alignment reference point is aligned with the center of the field of view of the camera to obtain the coordinate position of the reference probe, wherein the reference probe is one of a plurality of probes, and the alignment reference point is the position of the reference probe; based on the preset row and column values of the crystal grains in the wafer and the preset longitudinal steps and preset row intervals among the plurality of probes, the coordinate positions of other first probes except the reference probe are determined, and it can be understood that the preset longitudinal steps and the preset row intervals exist between the first probe and the reference probe, and an operator can arrange the probes based on the coordinate positions of the plurality of probes, so that the condition of firing pins in the wafer testing process can be avoided. Solves the limitation of needle seat space, and can reduce the scratch of probes when the needle is adjusted due to the smaller mutual spacing of the crystal grains of the tested unit.
The method is suitable for testing the tested units (such as Micro LED wafers and SMD LED wafers with the surface-mounted dimensions below 0408 specifications) by using the densely arranged multi-array probes, and can improve the testing efficiency and diversification of testing modes.
As shown in fig. 6, a second embodiment of the arrangement method of multiple probes according to the present application is provided based on the first embodiment, and in this embodiment, after the step S20, the method further includes:
a1: determining a first row value corresponding to a preset main needle in a wafer based on a row value of a preset mark point of the wafer and a target relative direction of the preset main needle at the preset mark point, wherein the preset main needle is one of a plurality of probes;
After the probes are arranged, because the arrangement mode of the probes is changed and the testing machine cannot acquire the coordinate positions of the probes, whether the crystal grain corresponding to the position of the probes is the crystal grain which is required to be tested currently needs to be determined before testing.
Therefore, in this embodiment, the row and column value of the preset mark point of the wafer and the target relative direction of the preset main needle at the preset mark point are determined, the preset mark point is a reference point (the relative origin of the wafer) for positioning and measurement on the wafer, the preset main needle is one of a plurality of preset probes, for example, the preset main needle may be the first needle or the 4 th needle of the 9 needles, and the preset main needle is not limited herein; the target relative direction preset at the preset mark point may be determined in advance according to the coordinate positions of the plurality of probes.
Specifically, since the die corresponding to the preset main needle is determined, the first rank value of the preset main needle relative to the wafer can be determined based on the rank value of the die corresponding to the preset main needle in the wafer and the rank value of the preset mark point.
A2: determining a second row-column value corresponding to other second probes except the preset main needle in the wafer based on the first row-column value;
After the first rank value of the first root needle is determined, the second rank values corresponding to other second probes except the preset main needle in the wafer can be calculated, and finally the rank values of all the probes are obtained, namely the test can be performed based on the rank values of the probes.
Specifically, the specific embodiment of determining, based on the first rank value, the second rank value corresponding to the second probes in the wafer except for the preset master pin includes:
And determining a second rank value corresponding to other second probes except the preset main probe in the wafer based on the first rank value, the preset arrangement sequence of the preset probes in the plurality of probes, the second relative direction between the second probes and the preset probes, and the preset longitudinal step distance and the preset row interval between the plurality of probes.
It will be appreciated that, since the preset longitudinal step distance and the preset line interval between the plurality of probes are known, and the preset arrangement order N channel of the preset probes in the plurality of probes is determined, the second row-column value r n corresponding to the other second probes in the wafer can be calculated based on the first row-column value r 0 of the preset probes:
rn＝r0+Nchannel×d×n；
Wherein d is the target relative direction of the preset main needle at the preset mark point, and n is the preset longitudinal step distance and the preset row interval.
A3: and performing probe testing on the wafer based on the target relative direction, the first rank value and the second rank value.
It will be appreciated that after the first rank value and the second rank value are determined, the corresponding die may be tested based on the rank value where the probe is located, and in particular, since the target relative direction is known, the die may be tested from far to near based on the preset mark point, or the die may be tested from near to far based on the preset mark point, or the like.
The specific implementation manner of performing the probe test on the wafer based on the target relative direction, the first rank value and the second rank value may be:
Determining a grain to be tested based on the target relative direction, the first rank value and the second rank value; and moving the crystal grain to be tested to the lower part of the probes through a probe station, aligning the crystal grain to be tested with the probes, and testing the crystal grain to be tested through the probes.
Specifically, before testing, it is required to determine whether the die corresponding to the current probe is a die to be tested, and it is able to determine whether the die corresponding to the preset probe is a die to be tested, that is, it is able to determine whether the other 8 dies corresponding to the second probe are dies to be tested, and if the die corresponding to the preset probe is a die to be tested, the other 8 dies corresponding to the second probe are dies to be tested; if all the probes are determined to be the grains to be tested, sending a test signal to the tester for testing the grains.
Specifically, referring to fig. 7, the test flow includes:
Placing the unit to be tested on the wafer carrying table; carrying out horizontal alignment, special position positioning and scanning sequencing on the tested unit; the wafer bearing table horizontally moves to the position of the crystal grain to be detected and is needled; testing the grains to be tested; switching to the next die to be tested.
Wherein, the implementation manner of determining the die to be tested based on the target relative direction, the first rank value and the second rank value may be:
And determining the grain to be tested based on the target relative direction, the first rank value, the second rank value, and a preset longitudinal step distance and a preset row interval between the plurality of probes.
Specifically, since the relative direction of the targets is known, the dies may be tested sequentially based on the preset mark points from far to near and at preset longitudinal steps or preset line intervals, or the dies may be tested based on the preset mark points from near to far and at preset longitudinal steps or preset line intervals, so as to realize various test modes.
Before testing, it is necessary to ensure that all probe contact electrodes are stable, and at the same time, transmit test signals to a tester, and receive test results in real time during testing.
In this embodiment, based on the above-mentioned probe distribution parameters, the die is tested, so that the risk of probe firing pins in the testing process can be avoided, and the test can be efficiently completed.
In addition, an embodiment of the present application further provides a multi-probe arrangement device, referring to fig. 8, where the multi-probe arrangement device includes:
the position determining module 10 is configured to align a needle alignment reference point with a field center of view of the camera to obtain a coordinate position of a reference probe, where the reference probe is one of multiple probes, and the needle alignment reference point is a position where the reference probe is located;
The probe arrangement module 20 is configured to determine coordinate positions of the first probes except the reference probe based on a preset row and column value of the die in the wafer, a preset longitudinal step distance and a preset line interval between the plurality of probes, so that an operator can perform probe arrangement based on the coordinate positions of the plurality of probes.
It should be noted that each module in the above apparatus may be used to implement each step in the above method, and achieve a corresponding technical effect, which is not described herein again.
Referring to fig. 9, fig. 9 is a schematic structural diagram of a device of a hardware running environment according to an embodiment of the present application.
As shown in fig. 9, the apparatus may include: a processor 1001, such as a CPU, a communication bus 1002, a memory 1005. Wherein the communication bus 1002 is used to enable connected communication between these components. The memory 1005 may be a high-speed RAM memory or a stable memory (non-volatile memory), such as a disk memory. The memory 1005 may also optionally be a storage device separate from the processor 1001 described above.
It will be appreciated by those skilled in the art that the structure shown in fig. 9 is not limiting of the apparatus and may include more or fewer components than shown, or certain components may be combined, or a different arrangement of components.
As shown in fig. 9, an operating system, a network communication module, a user interface module, and a multi-probe arrangement program may be included in a memory 1005 as one type of computer storage medium.
In the apparatus shown in fig. 9, the apparatus calls a multi-probe arrangement program stored in a memory 1005 by a processor 1001, and performs the following operations:
aligning a needle alignment datum point with the center of a view field of a camera to obtain a coordinate position of a reference probe, wherein the reference probe is one probe of a plurality of probes, and the needle alignment datum point is the position of the reference probe;
And determining the coordinate positions of other first probes except the reference probe based on the preset row and column values of the crystal grains in the wafer, the preset longitudinal step distance and the preset row interval among the plurality of probes, so that an operator can arrange the probes based on the coordinate positions of the plurality of probes.
Optionally, the processor 1001 may call the multi-probe arrangement program stored in the memory 1005, and further perform the following operations:
the coordinate position of the first probe is determined based on a preset rank value of the die in the wafer, a preset longitudinal step distance and a preset row interval between a plurality of probes, and a first relative direction between the first probe and the reference probe.
Optionally, the processor 1001 may call the multi-probe arrangement program stored in the memory 1005, and further perform the following operations:
Determining a first row value corresponding to a preset main needle in a wafer based on a row value of a preset mark point of the wafer and a target relative direction of the preset main needle at the preset mark point, wherein the preset main needle is one of a plurality of probes;
Determining a second row-column value corresponding to other second probes except the preset main needle in the wafer based on the first row-column value;
and performing probe testing on the wafer based on the target relative direction, the first rank value and the second rank value.
Optionally, the processor 1001 may call the multi-probe arrangement program stored in the memory 1005, and further perform the following operations:
determining a grain to be tested based on the target relative direction, the first rank value and the second rank value;
and moving the crystal grain to be tested to the lower part of the probes through a probe station, aligning the crystal grain to be tested with the probes, and testing the crystal grain to be tested through the probes.
Optionally, the processor 1001 may call the multi-probe arrangement program stored in the memory 1005, and further perform the following operations:
And determining the grain to be tested based on the target relative direction, the first rank value, the second rank value, and a preset longitudinal step distance and a preset row interval between the plurality of probes.
Optionally, the processor 1001 may call the multi-probe arrangement program stored in the memory 1005, and further perform the following operations:
And determining a second rank value corresponding to other second probes except the preset main probe in the wafer based on the first rank value, the preset arrangement sequence of the preset probes in the plurality of probes, the second relative direction between the second probes and the preset probes, and the preset longitudinal step distance and the preset row interval between the plurality of probes.
In addition, the embodiment of the invention also provides a computer program product, which comprises a multi-probe arrangement program, wherein the multi-probe arrangement program realizes the steps of the multi-probe arrangement method when being executed by a processor.
The specific implementation manner of the computer program product of the present invention is basically the same as that of each embodiment of the arrangement method of multiple probes, and will not be described herein.
In addition, an embodiment of the present application further provides a computer readable storage medium, where a multi-probe arrangement program is stored, where the multi-probe arrangement program when executed by a processor implements the following operations:
aligning a needle alignment datum point with the center of a view field of a camera to obtain a coordinate position of a reference probe, wherein the reference probe is one probe of a plurality of probes, and the needle alignment datum point is the position of the reference probe;
And determining the coordinate positions of other first probes except the reference probe based on the preset row and column values of the crystal grains in the wafer, the preset longitudinal step distance and the preset row interval among the plurality of probes, so that an operator can arrange the probes based on the coordinate positions of the plurality of probes.
It should be noted that, when the computer readable storage medium is executed by the processor, each step in the method may be further implemented, and meanwhile, the corresponding technical effects are achieved, which is not described herein.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or system that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or system. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or system that comprises the element.
The foregoing embodiment numbers of the present application are merely for the purpose of description, and do not represent the advantages or disadvantages of the embodiments.
From the above description of the embodiments, it will be clear to those skilled in the art that the above-described embodiment method may be implemented by means of software plus a necessary general hardware platform, but of course may also be implemented by means of hardware, but in many cases the former is a preferred embodiment. Based on such understanding, the technical solution of the present application may be embodied essentially or in a part contributing to the prior art in the form of a software product stored in a storage medium (e.g. ROM/RAM, magnetic disk, optical disk) as described above, comprising instructions for causing a terminal device (which may be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to perform the method according to the embodiments of the present application.
The foregoing description is only of the preferred embodiments of the present application, and is not intended to limit the scope of the application, but rather is intended to cover any equivalents of the structures or equivalent processes disclosed herein or in the alternative, which may be employed directly or indirectly in other related arts.

Claims (10)

1. The multi-probe arrangement method is characterized by comprising the following steps of:
aligning a needle alignment datum point with the center of a view field of a camera to obtain a coordinate position of a reference probe, wherein the reference probe is one probe of a plurality of probes, and the needle alignment datum point is the position of the reference probe;
And determining the coordinate positions of other first probes except the reference probe based on the preset row and column values of the crystal grains in the wafer, the preset longitudinal step distance and the preset row interval among the plurality of probes, so that an operator can arrange the probes based on the coordinate positions of the plurality of probes.
2. The method of claim 1, wherein the step of determining the coordinate positions of the first probes other than the reference probe based on a predetermined rank value of the die in the wafer, and a predetermined longitudinal step distance and a predetermined line interval between the plurality of probes, comprises:
the coordinate position of the first probe is determined based on a preset rank value of the die in the wafer, a preset longitudinal step distance and a preset row interval between a plurality of probes, and a first relative direction between the first probe and the reference probe.
3. The method of claim 1, wherein after the step of determining the coordinate positions of the first probes other than the reference probes based on the predetermined column and row values of the die in the wafer and the predetermined longitudinal steps and the predetermined row intervals between the plurality of probes, further comprising:
Determining a first row value corresponding to a preset main needle in a wafer based on a row value of a preset mark point of the wafer and a target relative direction of the preset main needle at the preset mark point, wherein the preset main needle is one of a plurality of probes;
Determining a second row-column value corresponding to other second probes except the preset main needle in the wafer based on the first row-column value;
and performing probe testing on the wafer based on the target relative direction, the first rank value and the second rank value.
4. The method of multiple probe arrangement according to claim 3, wherein the step of performing probe testing on the wafer based on the target relative direction, the first rank value and the second rank value comprises:
determining a grain to be tested based on the target relative direction, the first rank value and the second rank value;
and moving the crystal grain to be tested to the lower part of the probes through a probe station, aligning the crystal grain to be tested with the probes, and testing the crystal grain to be tested through the probes.
5. The multi-probe arrangement method according to claim 4, wherein the step of determining the die to be tested based on the target relative direction, the first rank value, and the second rank value includes:
And determining the grain to be tested based on the target relative direction, the first rank value, the second rank value, and a preset longitudinal step distance and a preset row interval between the plurality of probes.
6. The method of claim 3, wherein the step of determining, based on the first row value, a second row value corresponding to a second probe in the wafer, the second probe being other than the predetermined master probe, comprises:
And determining a second rank value corresponding to other second probes except the preset main probe in the wafer based on the first rank value, the preset arrangement sequence of the preset probes in the plurality of probes, the second relative direction between the second probes and the preset probes, and the preset longitudinal step distance and the preset row interval between the plurality of probes.
7. The utility model provides a device of arranging of many probes which characterized in that, device of arranging of many probes includes:
The position determining module is used for aligning a needle alignment reference point with the center of a field of view of the camera to obtain the coordinate position of a reference probe, wherein the reference probe is one probe among a plurality of probes, and the needle alignment reference point is the position of the reference probe;
the probe arrangement module is used for determining the coordinate positions of other first probes except the reference probe based on the preset row and column values of the crystal grains in the wafer, the preset longitudinal step distance and the preset row interval among the probes, so that an operator can arrange the probes based on the coordinate positions of the probes.
8. An apparatus, the apparatus comprising: a memory, a processor and a multi-probe arrangement program stored on the memory and executable on the processor, the multi-probe arrangement program being configured to implement the steps of the multi-probe arrangement method according to any one of claims 1 to 6.
9. A computer-readable storage medium, wherein a multi-probe arrangement program is stored on the computer-readable storage medium, which when executed by a processor, implements the steps of the multi-probe arrangement method according to any one of claims 1 to 6.
10. A computer program product, characterized in that it comprises a multi-probe arrangement program which, when executed by a processor, implements the steps of the multi-probe arrangement method according to any one of claims 1 to 6.
CN202410416570.2A 2024-04-08 2024-04-08 Multi-probe arrangement method, device, equipment and storage medium Pending CN118443987A (en)

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