CN118426233B - Display panel and display device - Google Patents
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- CN118426233B CN118426233B CN202410892484.9A CN202410892484A CN118426233B CN 118426233 B CN118426233 B CN 118426233B CN 202410892484 A CN202410892484 A CN 202410892484A CN 118426233 B CN118426233 B CN 118426233B
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136254—Checking; Testing
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/22—Antistatic materials or arrangements
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present application relates to the field of display, and in particular, to a display panel and a display device. The display panel comprises a color film substrate, a liquid crystal display layer and an array substrate which are sequentially stacked, wherein the array substrate is provided with a grounding metal wire, a metal polar plate and a power consumption unit, and the grounding metal wire is positioned at the edge of the array substrate; the metal polar plate is arranged in parallel and opposite to the grid metal of the grounding metal wire and forms an energy storage capacitor for collecting and storing static electricity, and the power consumption unit is electrically connected with the energy storage capacitor and is used for consuming electric energy stored by the energy storage capacitor. The display panel provided by the application can obviously improve the electrostatic protection capability, improve the yield of the display panel and ensure the stable operation of the display panel.
Description
Technical Field
The present application relates to the field of display, and in particular, to a display panel and a display device.
Background
In the preparation and application processes of the display device, static electricity may enter the display device to cause failure of electronic devices in the display device, so that the production efficiency and yield of the display device are affected.
At present, the anti-electricity measures of the display equipment are usually focused on using anti-static production instruments, grounding the equipment or controlling the production environment and the use environment. However, static electricity is ubiquitous, and especially for outdoor display devices, the probability of electrostatic breakdown is increased, so that measures are required to improve the antistatic performance of the display device. The existing antistatic measures of the in-plane liquid crystal display panel can only shield part of static electricity, and the static electricity dredging capability is insufficient.
Disclosure of Invention
The application provides a display panel and display equipment, which can improve the static electricity protection capability and the product yield of the display panel and ensure the stable operation of the display panel.
In a first aspect, the application provides a display panel, which comprises a color film substrate, a liquid crystal display layer and an array substrate which are sequentially stacked, wherein the array substrate is provided with a grounding metal wire, a metal polar plate and a power consumption unit, and the grounding metal wire is positioned at the edge of the array substrate;
The metal polar plate and the grid metal of the grounding metal wire are arranged in parallel and opposite to each other and form an energy storage capacitor for collecting and storing static electricity, and the power consumption unit is electrically connected with the energy storage capacitor and is used for consuming electric energy stored by the energy storage capacitor.
In some embodiments, the power consuming unit is an electrothermal conversion unit; the array substrate is provided with an output capacitor and a thin film transistor charging circuit for charging the output capacitor, and the electrothermal conversion unit is arranged corresponding to the area where the thin film transistor charging circuit is located.
In some embodiments, the electrothermal conversion unit includes:
a P-type semiconductor;
an N-type semiconductor;
And the metal heat release surface is connected with the P-type semiconductor and the N-type semiconductor and is correspondingly arranged with the grid metal of the thin film transistor charging circuit.
In some embodiments, the array substrate comprises a glass substrate, the P-type semiconductor and the N-type semiconductor are doped and formed on a surface layer of one side of the glass substrate facing the color film substrate, and the P-type semiconductor and the N-type semiconductor are arranged between the glass substrate and gate metal of the thin film transistor charging circuit.
In some embodiments, the metal plates are integrally arranged, or the metal plates are intermittently arranged in multiple groups.
In some embodiments, the array substrate is provided with a voltage detection circuit electrically connected with the energy storage capacitor, and the voltage detection circuit is used for detecting the voltage of the energy storage capacitor.
In some embodiments, a control switch is connected between the energy storage capacitor and the power consuming unit.
In some embodiments, the control switch is coupled to the voltage detection circuit, and the control switch turns on the energy storage capacitor and the power consumption unit when the voltage detection circuit detects that the voltage of the energy storage capacitor is greater than a preset voltage.
In some embodiments, the control switch is coupled to the thin film transistor charging circuit, which is closed when the thin film transistor charging circuit is on and charging the output capacitance.
In a second aspect, the present application provides a display device, applying any one of the display panels described above.
Compared with the prior art, the technical scheme provided by the embodiment of the application has the following advantages: the storage capacitor is formed by the grounding metal wire and the metal polar plate at the edge of the array substrate, static electricity accumulated on the grounding metal wire in the environment and in the using process is converted into electric energy to be stored in the storage capacitor, and the electric energy stored in the storage capacitor is consumed by the power consumption unit electrically connected with the storage capacitor, so that the static electricity dredging capacity of the display panel is remarkably improved, and the phenomena of accumulation and static electricity breakdown on the grounding metal wire are effectively prevented.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application.
In order to more clearly illustrate the embodiments of the application or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, and it will be obvious to a person skilled in the art that other drawings can be obtained from these drawings without inventive effort.
One or more embodiments are illustrated by way of example and not limitation in the figures of the accompanying drawings, in which like references indicate similar elements, and in which the figures of the drawings are not to be taken in a limiting sense, unless otherwise indicated.
Fig. 1 is a schematic diagram of a display panel according to an embodiment of the application;
FIG. 2 is a cross-sectional view at A-A of FIG. 1;
FIG. 3 is a schematic diagram of the operation of the electrothermal conversion unit;
FIG. 4 is a schematic diagram illustrating the static electricity consumption of a display panel according to an embodiment of the present application;
Fig. 5 is a schematic diagram illustrating static electricity consumption of a display panel according to another embodiment of the application.
Reference numerals illustrate:
100-an array substrate;
10-an energy storage capacitor; 11-a grounded metal line; 12-a metal polar plate; 13-a thin film transistor charging circuit; a 14-P type semiconductor; a 15-N type semiconductor; 16-metal heat release surface; 17-output capacitance; 18-a voltage detection circuit; 19-control switch.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The following disclosure provides many different embodiments, or examples, for implementing different structures of the application. In order to simplify the present disclosure, components and arrangements of specific examples are described below. They are, of course, merely examples and are not intended to limit the application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
For ease of description, spatially relative terms, such as "inner," "outer," "lower," "upper," "above," "front," "rear," and the like, may be used herein to describe one element's or feature's relative positional relationship or movement to another element's or feature as illustrated in the figures. Such spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figure experiences a position flip or a change in attitude or a change in state of motion, then the indications of these directivities correspondingly change, for example: an element described as "under" or "beneath" another element or feature would then be oriented "over" or "above" the other element or feature. Accordingly, the example term "below … …" may include both upper and lower orientations. The device may be otherwise oriented (rotated 90 degrees or in other directions) and the spatial relative relationship descriptors used herein interpreted accordingly.
In order to solve the technical problem that in the prior art, static electricity mostly enters the grounding metal wire 11 accumulated on the outermost periphery from the side surface of the panel and is easy to explode metal wires in a special-shaped area and a crossover line to cause abnormal display of the display panel, the application provides the display panel and the display device, which can remarkably improve the static electricity dredging capability of the display panel, avoid the phenomenon of static electricity burst through, improve the product yield and ensure the normal operation of the display panel; in addition, the display panel provided by the preferred embodiment of the application can also utilize the collected static electricity by using the power consumption unit to heat the charging terminal of the output capacitor 17 for driving the liquid crystal molecules to deflect, so that the charging efficiency of the output capacitor 17 is improved.
Referring to fig. 1 and 2, an embodiment of the present application provides a display panel, which includes a color film substrate, a liquid crystal display layer and an array substrate 100 that are sequentially stacked, where the color film substrate and the array substrate 100 form a liquid crystal cell, and the liquid crystal display layer is filled between the color film substrate and the array substrate 100, and the specific structure and the forming process can refer to the prior art. The color film substrate (not shown in the drawings) is located on the display side of the display panel, and the color film substrate (COLORFILTER, abbreviated as CF) is one of the important components in the display panel, and the backlight transmitted from the liquid crystal display layer or the white light emitted from the organic electroluminescent device is transmitted through the color resistors of the colors of red, green, blue and the like arranged on the color film substrate in an array manner, so that the lights of various colors of red, green, blue and the like are emitted to realize the color display of the display panel. In order to prevent crosstalk of light transmitted from color resistors of adjacent colors, a black matrix (BLACKMATRIX, abbreviated as BM) is generally disposed on a color film substrate, a plurality of spaced hollow areas arranged in an array are formed on the black matrix, and the color resistors of adjacent colors are coated in the hollow areas of the black matrix to achieve the purpose of preventing crosstalk.
The Array substrate 100, i.e., an Array substrate, refers to a process of forming a TFT (Thin Film Transistor) Array on a glass substrate by a process, and the Array process mainly includes Thin Film deposition, exposure, development, etching, stripping, and the like. The voltage value of the sub-pixel loaded on each pixel unit of the liquid crystal display layer is adjusted through the TFT array, so that the transmission intensity of each color light is changed. The color display is realized by mixing the RGB color lights with different intensities.
The application mainly improves the side of an array substrate 100 of a display panel, a grounding metal wire 11 is arranged at the edge of the array substrate 100, a metal polar plate 12 parallel and opposite to the grid metal of the grounding metal wire 11 is additionally arranged on the array substrate 100 to form an energy storage capacitor 10, and static charges which enter from the external environment through the side of the display panel and are accumulated on the grounding metal wire 11 at the outermost periphery are stored on the energy storage capacitor 10. In addition, the array substrate 100 is further provided with a power consumption unit, the power consumption unit is electrically connected with the energy storage capacitor 10, and the power consumption unit consumes the electric energy stored by the energy storage capacitor 10, so that the static burst through phenomenon is effectively prevented, the static electricity dredging capacity and the product preparation yield of the display panel are improved, and the stable operation of the display panel is ensured.
In some embodiments, the power consumption unit adopts an electrothermal conversion unit, where the electrothermal conversion unit refers to a circuit or a component that converts electric energy into heat energy, and the electrothermal conversion unit is connected to the energy storage capacitor 10 to convert the electric energy stored in the energy storage capacitor 10 into heat energy through the electrothermal conversion unit.
Further, the embodiment of the application improves the response performance of the panel by utilizing the heat energy released by the electrothermal conversion unit.
Referring to fig. 1 to 3, the array substrate 100 is provided with an output capacitor 17 and a thin film transistor charging circuit 13, wherein the output capacitor 17 is used for outputting voltage to a pixel unit of a liquid crystal display layer through a TFT array to control deflection of liquid crystal molecules; the thin film transistor charging circuit 13 is turned on when receiving a signal for charging the output capacitor 17, and charges the output capacitor 17 through a charging terminal of the output capacitor 17, that is, a Q point shown in fig. 1. The electrothermal conversion unit is arranged corresponding to the region of the thin film transistor charging circuit 13, and the electrothermal conversion unit releases heat to raise the temperature of the thin film transistor charging circuit 13, thereby raising the charging efficiency of the output capacitor 17.
In fig. 1, T1 is a TFT that pre-charges a capacitor C1, that is, a thin film transistor charging circuit 13, and the capacitor C1, that is, an output capacitor 17, is used to output a voltage to a pixel unit of a liquid crystal display layer through a TFT array. During operation of the display panel, the output signal Gn-1 of the previous row causes the TFT of T1 to turn on and then precharge the Q point (connected to one end of the output capacitor 17). The Q point is a pull-up point of the output signal, and is a gate point of T2 for controlling Gn to output a high voltage.
The energy storage capacitor 10, that is, the capacitor C2, is disposed at the grounded metal line 11 (as shown in fig. 1 and 2) at the periphery of the array substrate 100, the heat release surface of the electrothermal conversion unit is the gate metal of the thin film transistor charging circuit 13, the electrothermal conversion unit is used to consume the electric energy accumulated by static electricity, and the peripheral energy storage capacitor 10 is used to collect the accumulated static electricity so as to supply power to the electrothermal conversion unit. In one embodiment, the electrothermal conversion unit includes a P-type semiconductor 14, an N-type semiconductor 15, and a metal heat release surface 16 connected between the P-type semiconductor 14 and the N-type semiconductor 15. The metal heat release surface 16 is disposed corresponding to the gate metal of the tft charging circuit 13, and the corresponding disposition may be that the metal surface is bonded to the gate metal of the tft charging circuit 13, or that the gate metal of the tft charging circuit 13 is used as the metal heat release surface 16.
The heat release principle of the electrothermal conversion unit is as follows: the thermoelectric effect is that conductors of different materials are connected and current is introduced, the connection point of the two conductors is called a node, and the position of the node absorbs and emits heat according to the difference of current directions; the thermoelectric effect is reversible, and the metal heat release surface 16 connecting the N-type semiconductor 15 and the P-type semiconductor 14 can release heat by connecting the P-type semiconductor 14 and the N-type semiconductor 15 at the lower side of the metal heat release surface 16 and controlling electrons to flow from the N-type semiconductor 15 to the P-type semiconductor 14.
The P-type semiconductor 14 is a semiconductor called a hole semiconductor, called P-type semiconductor 14 for short, in which many holes lacking electrons are generated in a conductor by doping a small amount of elements such as indium, aluminum, boron, gallium, etc. on top of single crystal silicon. The N-type semiconductor 15 is a semiconductor called an electron-type semiconductor, called N-type semiconductor for short, in which a small amount of elements such as antimony, phosphorus, arsenic, etc. are doped into single crystal silicon, and many negatively charged electrons are generated in the semiconductor, and the electrons are conducted. The N-type semiconductor 15 has a much higher electron concentration than the P-type semiconductor 14, so that when external electrons flow from the N-type semiconductor 15 to the P-type semiconductor 14, free electrons flow from a place of high concentration to a place of low concentration, and energy is released, so that the metal heat release surface 16 connecting the N-type semiconductor 15 and the P-type semiconductor 14 releases heat.
As shown in fig. 2, the array substrate 100 includes a glass substrate at a bottom layer, and an insulating layer, a shielding layer, a TFT array, and the like disposed on a surface of the glass substrate, and in particular, reference is made to the related art. In contrast, in the array substrate of the present application, the electrothermal conversion unit is disposed on the surface layer of the glass substrate at the position corresponding to the thin film transistor charging circuit 13, the P-type semiconductor 14 and the N-type semiconductor 15 of the electrothermal conversion unit are formed by doping on the monocrystalline silicon, and in the process of manufacturing the display screen, before the first layer of metal, that is, the gate metal of the thin film transistor charging circuit 13, is manufactured, doping is performed at the corresponding position on the surface layer of the glass substrate, so that the P-type semiconductor 14 and the N-type semiconductor 15 are formed, and the manufacturing is completed because the main component of the glass substrate is SiO2, so that no rejection reaction exists. Such that the P-type semiconductor 14 and the N-type semiconductor 15 are located between the glass substrate and the first layer metal, i.e., the gate metal of the thin film transistor charging circuit 13.
The gate metal of the thin film transistor charging circuit 13 is connected with the P-type semiconductor 14 and the N-type semiconductor 15, and the P-type semiconductor 14 and the N-type semiconductor 15 are matched to form an electrothermal conversion unit, namely, the gate metal of the thin film transistor charging circuit 13 serves as a metal heat release surface, when the electrostatic electric energy collected by the energy storage capacitor 10 is consumed, the thin film transistor charging circuit 13 is heated, the temperature of the area where the thin film transistor charging circuit 13 is located is increased, the ion mobility in the ACT of the thin film transistor charging circuit 13 is increased, and the charging rate to the Q point is increased.
According to the application, the energy storage capacitor 10 is formed by arranging a layer of metal polar plate 12 right above the grounding metal wire 11 at the edge of the array substrate 100 and matching the metal plate with the grounding metal, so that static electricity accumulated on the grounding metal wire 11 in the environment and in the using process is converted into electric energy to be stored in the energy storage capacitor 10. As shown in fig. 1, the charging rate of the Q point of the output capacitor 17 is determined by the thin film transistor charging circuit 13, and the charging rate of the thin film transistor charging circuit 13 to the Q point, that is, the output capacitor 17, is low at low temperature, and the charging rate of the thin film transistor charging circuit 13 to the Q point is high at high temperature.
An electrothermal conversion unit is arranged on the grid electrode of the thin film transistor charging circuit 13, and the required electric energy of the electrothermal conversion unit is provided by the collection of static electricity by the energy storage capacitor 10. As shown in fig. 3, the electrothermal conversion unit converts the electric energy in the storage capacitor 10 into heat energy, and releases the heat energy on the gate metal surface of the thin film transistor charging circuit 13, and the charging rate of the thin film transistor charging circuit 13 to the Q point is high at high temperature.
The application collects static electricity and converts the static electricity into electric energy to improve the operation temperature of the thin film transistor charging circuit 13, improve the charging rate of a Q point, namely the output capacitor 17, and solve the problem of insufficient charging rate at low temperature; meanwhile, the static electricity is conducted and converted into electric energy to be utilized, a static electricity accumulation and explosion circuit is prevented, and the static electricity protection capability is improved.
As shown in fig. 2, the metal plates 12 may be integrally provided, or may be intermittently provided in plural groups. The metal electrode plates 12 are integrally arranged or discontinuously arranged in multiple groups, are generally opposite to the grid metal of the grounding metal wire 11 in parallel, and keep proper spacing, so that certain energy storage capacity of the energy storage capacitor 10 is ensured. When the metal polar plate 12 is integrally arranged, the metal polar plate is parallel to and opposite to the grounding metal wire 11 to form an energy storage capacitor 10 with larger electrostatic energy storage capacity; when a plurality of groups of metal polar plates 12 are alternately arranged, the metal polar plates are oppositely arranged in parallel with the grounding metal wire 11 to form a plurality of energy storage capacitors 10 with relatively small electrostatic energy storage capacity, and the plurality of energy storage capacitors 10 are electrically connected with the electrothermal conversion unit in a parallel connection mode.
Referring to fig. 4 in combination, the p-type semiconductor 14, the N-type semiconductor 15 and the metal heat release surface 16 constitute an electrothermal conversion unit. In some embodiments, the electrostatic burst through phenomenon is prevented for convenience in controlling the discharge of the storage capacitor 10. The array substrate 100 is provided with a voltage detection circuit 18, and the voltage detection circuit 18 is electrically connected with the energy storage capacitor 10 and is used for detecting the voltage of the energy storage capacitor 10. When the voltage of the energy storage capacitor 10 is higher than the preset voltage, the energy storage capacitor 10 is controlled to discharge through the electrothermal conversion unit in time, so that the hidden danger of electrostatic breakdown is eliminated. A control switch 19 is connected between the energy storage capacitor 10 and the power consumption unit, namely the electrothermal conversion unit, and the control switch 19 can be a controlled triode. The control switch 19 is coupled to the voltage detection circuit 18 (in the drawing, a dotted line indicates a coupling relationship, which may be a direct connection or a signal control connection; a solid line indicates an electrical connection relationship), and when the voltage detection circuit 18 detects that the voltage of the energy storage capacitor 10 is lower than a set voltage, the control switch 19 is turned off, and the energy storage capacitor 10 collects and stores static electricity. When the voltage detection circuit 18 detects that the energy storage capacitor 10 exceeds the set voltage, the control switch 19 is closed and conducted, the energy storage capacitor 10 and the power consumption unit form a closed loop, the power consumption unit such as an electrothermal conversion unit discharges, and the thin film transistor charging circuit 13 for charging the output capacitor 17 charges and heats.
The beneficial effects of the arrangement are that the voltage detection circuit 18 is utilized to detect the voltage of the energy storage capacitor 10 in real time, when the voltage detection circuit 18 detects that the voltage of the energy storage capacitor 10 is higher than the set voltage, the control switch 19 is controlled to be closed in time, and the electric heating conversion unit is used for discharging, so that the good static electricity collection capacity of the energy storage capacitor 10 is ensured, and the static electricity breakdown phenomenon of the energy storage capacitor 10 is effectively prevented.
In some embodiments, the control switch 19 may also be coupled with the thin film transistor charging circuit 13 such that the control switch 19 can be closed or opened in synchronization with the thin film transistor charging circuit 13. When the thin film transistor charging circuit 13 is turned on and charges the output capacitor 17 through the Q point, the control switch 19 is turned on, the energy storage capacitor 10 discharges and generates heat energy through the electrothermal conversion unit, the thin film transistor charging circuit 13 is heated, the temperature of the area where the thin film transistor charging circuit 13 is located is increased, and the charging rate of the output capacitor 17 is further increased.
When the thin film transistor charging circuit 13 is in an off state and the output capacitor 17 is not charged through the Q point, the control switch 19 is also kept in the off state, the energy storage capacitor 10 can be in an electrostatic collection state, the thin film transistor charging circuit 13 is conveniently closed and charges the output capacitor 17 through the Q point, the energy storage capacitor 10 stores sufficient electric energy to supply power to the electrothermal conversion unit, the heating value of the electrothermal conversion unit is ensured, the region where the thin film transistor charging circuit 13 is located is fully heated, and the charging efficiency of the thin film transistor charging circuit 13 to the output capacitor 17 through the Q point is improved.
In the above embodiment, as shown in fig. 1, the output signal Gn-1 of the previous row turns on the TFT of the thin film transistor charging circuit 13, and then precharges the Q point (connected to one end of the storage capacitor 10). The Q point is a pull-up point of the output signal, and is a gate point of the T2 region for controlling Gn to output a high voltage. When Gn-1 outputs voltage, the grid electrode of the thin film transistor charging circuit 13 is opened, the energy storage capacitor 10 is connected with the grid electrode of the thin film transistor charging circuit 13, the two polar plates of the energy storage capacitor 10 form pressure difference, electric energy is converted into current, and the energy storage capacitor 10 at the moment is used as a power supply of the electrothermal conversion unit; when Gn-1 does not output a voltage, the TFT of the thin film transistor charging circuit 13 is turned off and does not operate, and the storage capacitor 10 converts only the collected electrostatic charge into electric energy storage and capacitance. The control switch 19 may also be controlled by the output signal Gn-1 of the previous row such that the control switch 19 and the thin film transistor charging circuit 13 are in a synchronous on/off state. Referring to fig. 5, in some embodiments, the control logic for controlling the switch 19 to turn on and off the electrical connection between the storage capacitor 10 and the electrothermal conversion element may also be modified based on the above embodiments. Illustratively, two groups of control switches 19 are provided, and the two groups of control switches 19 are connected in parallel and then connected in series between the energy storage capacitor 10 and the electrothermal conversion unit. A set of control switches 19 are coupled to the thin film transistor charging circuit 13 to maintain synchronous on and off states with the thin film transistor charging circuit 13. The other group of control switch 19 is coupled with the voltage detection circuit 18, when the voltage detection circuit 18 detects that the voltage of the energy storage capacitor 10 is higher than the first preset voltage, the control switch 19 is controlled to be closed, and the energy storage capacitor 10 can form a closed loop with the electrothermal conversion unit through the control switch 19 to discharge, so that the phenomenon of static burst through is prevented; when the voltage detection circuit 18 detects that the voltage of the energy storage capacitor 10 is lower than the second preset voltage, the control switch 19 is controlled to be turned off, so that the energy storage capacitor 10 is in a state of collecting electrostatic energy storage and keeping, and therefore the energy storage capacitor 10 stores certain electric energy, and the heating requirement of the electrothermal conversion unit on the thin film transistor charging circuit 13 is met.
In this way, when the thin film transistor charging circuit 13 is in the off state and the output capacitor 17 is not charged through the Q point, the control switch 19 coupled to the thin film transistor charging circuit 13 is also kept in the off state, and whether to heat the thin film transistor charging circuit 13 does not affect the operation of the display panel; the control switch 19 coupled to the voltage detection circuit 18 can control the control switch 19 to be opened or closed based on the voltage detection result of the voltage detection circuit 18 on the energy storage capacitor 10, so as to effectively prevent the energy storage capacitor 10 from generating static burst through phenomenon or insufficient static collecting capability due to the voltage higher than the first preset voltage; but also can effectively avoid the phenomenon that the voltage of the energy storage capacitor 10 is lower than the second preset voltage (both groups of control switches 19 are kept off) so as to cause insufficient power supply to the electrothermal conversion unit and fail to meet the heating requirement.
When the thin film transistor charging circuit 13 is turned on and charges the output capacitor 17 through the Q point, the control switch 19 coupled to the thin film transistor charging circuit 13 is turned on to electrically conduct the electrothermal conversion unit composed of the P-type semiconductor 14, the N-type semiconductor 15 and the metal heat release surface 16 with the energy storage capacitor 10, thereby heating the thin film transistor charging circuit 13 and increasing the charging rate of the output capacitor 17.
According to the application, under the condition that the original display panel structure is not changed, the metal polar plate 12 is arranged on the grounding metal wire 11 to form the energy storage capacitor 10, static charge is converted into electric energy to be stored, the electric energy stored by the energy storage capacitor 10 is used for supplying power to an electrothermal conversion unit bridged in a circuit, so that the electric energy is converted into heat energy, the operating temperature of the TFT of the thin film transistor charging circuit 13 is improved, the charging rate of charging the output capacitor 17 through a Q point is further increased, the problem of insufficient charging rate of the thin film transistor charging circuit 13 at low temperature is solved, and as a result, the problem of insufficient charging of the thin film transistor charging circuit 13 at low temperature is solved by utilizing static charge synchronously while static electricity is effectively protected.
The application also provides a display device, which can be a mobile phone, a tablet and the like by applying the display panel provided by the embodiment, and other parts of the display device are set by referring to the prior art, and the application is not listed and described one by one.
It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only, and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprises," "comprising," "includes," "including," and "having" are inclusive and therefore specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups thereof. The method steps, processes, and operations described herein are not to be construed as necessarily requiring their performance in the particular order described or illustrated, unless an order of performance is explicitly stated. It should also be appreciated that additional or alternative steps may be used.
Although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms may be only used to distinguish one element, component, region, layer or section from another region, layer or section. Terms such as "first," "second," and other numerical terms when used herein do not imply a sequence or order unless clearly indicated by the context. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the example embodiments.
The foregoing is only a specific embodiment of the application to enable those skilled in the art to understand or practice the application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. The display panel is characterized by comprising a color film substrate, a liquid crystal display layer and an array substrate which are sequentially stacked, wherein the array substrate is provided with a grounding metal wire, a metal polar plate and a power consumption unit, and the grounding metal wire is positioned at the edge of the array substrate;
the metal polar plate and the grid metal of the grounding metal wire are arranged in parallel and opposite to each other and form an energy storage capacitor for collecting and storing static electricity, and the power consumption unit is electrically connected with the energy storage capacitor and is used for consuming electric energy stored by the energy storage capacitor;
The power consumption unit is an electrothermal conversion unit; the array substrate is provided with an output capacitor and a thin film transistor charging circuit for charging the output capacitor, and the electrothermal conversion unit is arranged corresponding to the area where the thin film transistor charging circuit is located;
the electrothermal conversion unit includes:
a P-type semiconductor;
an N-type semiconductor;
And the metal heat release surface is connected with the P-type semiconductor and the N-type semiconductor and is correspondingly arranged with the grid metal of the thin film transistor charging circuit.
2. The display panel according to claim 1, wherein the array substrate comprises a glass substrate, the P-type semiconductor and the N-type semiconductor are doped and formed on a surface layer of a side of the glass substrate facing the color film substrate, and the P-type semiconductor and the N-type semiconductor are disposed between the glass substrate and a gate metal of the thin film transistor charging circuit.
3. The display panel according to claim 1 or 2, wherein the metal electrode plates are integrally provided, or the metal electrode plates are intermittently provided in plural groups.
4. The display panel according to claim 1, wherein the array substrate is provided with a voltage detection circuit electrically connected to the storage capacitor, and the voltage detection circuit is configured to detect a voltage of the storage capacitor.
5. The display panel of claim 4, wherein a control switch is connected between the energy storage capacitor and the power consumption unit.
6. The display panel of claim 5, wherein the control switch is coupled to the voltage detection circuit, the control switch turning on the energy storage capacitor and the power consumption unit when the voltage detection circuit detects that the voltage of the energy storage capacitor is greater than a preset voltage.
7. The display panel of claim 5 or 6, wherein the control switch is coupled to the thin film transistor charging circuit, the control switch being closed when the thin film transistor charging circuit is on and charging the output capacitance.
8. A display device characterized in that the display panel of any one of claims 1-7 is applied.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113611700A (en) * | 2021-07-21 | 2021-11-05 | 武汉华星光电技术有限公司 | Display panel mother board |
| CN117079614A (en) * | 2023-10-12 | 2023-11-17 | 惠科股份有限公司 | Gate row driving circuit, driving method of gate row driving circuit and display substrate |
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| JP5690178B2 (en) * | 2010-04-26 | 2015-03-25 | 京セラディスプレイ株式会社 | Liquid crystal display |
| CN105911787B (en) * | 2016-07-05 | 2019-06-04 | 厦门天马微电子有限公司 | A kind of array substrate and display panel |
| CN107145015B (en) * | 2017-06-30 | 2020-08-07 | 武汉华星光电技术有限公司 | Display panel |
| CN107807467B (en) * | 2017-11-07 | 2023-08-22 | 深圳市华星光电半导体显示技术有限公司 | Structure for preventing panel peripheral wiring from electrostatic injury |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113611700A (en) * | 2021-07-21 | 2021-11-05 | 武汉华星光电技术有限公司 | Display panel mother board |
| CN117079614A (en) * | 2023-10-12 | 2023-11-17 | 惠科股份有限公司 | Gate row driving circuit, driving method of gate row driving circuit and display substrate |
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