[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

CN118311051A - Defect detection method, device, system and computer readable medium - Google Patents

Defect detection method, device, system and computer readable medium Download PDF

Info

Publication number
CN118311051A
CN118311051A CN202310020513.8A CN202310020513A CN118311051A CN 118311051 A CN118311051 A CN 118311051A CN 202310020513 A CN202310020513 A CN 202310020513A CN 118311051 A CN118311051 A CN 118311051A
Authority
CN
China
Prior art keywords
defect
target
defects
information
position information
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310020513.8A
Other languages
Chinese (zh)
Inventor
陈鲁
雷云龙
田旷达
张嵩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Zhongke Feice Technology Co Ltd
Original Assignee
Shenzhen Zhongke Feice Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Zhongke Feice Technology Co Ltd filed Critical Shenzhen Zhongke Feice Technology Co Ltd
Priority to CN202310020513.8A priority Critical patent/CN118311051A/en
Publication of CN118311051A publication Critical patent/CN118311051A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The defect detection method disclosed by the embodiment of the invention comprises the following steps: acquiring a first defect information set corresponding to a first sample and a second defect information set corresponding to a second sample; the first defect information set comprises a plurality of first position information corresponding to the first defects on the first sample one by one; the second defect information set includes a plurality of second position information corresponding to the plurality of second defects on the second sample one-to-one; determining a target verification defect information set corresponding to a target first defect of the plurality of first defects according to the plurality of second position information; the target verification defect information set is a subset of the second defect information set; and detecting target alignment second defects which are the same as the actual positions of the target first defects on the workpiece to be detected in the second defects according to the target first position information corresponding to the target first defects and the target checking defect information set. The defect detection method disclosed by the embodiment of the invention can detect the defect change caused by a single process step.

Description

Defect detection method, device, system and computer readable medium
Technical Field
The present invention relates to the field of semiconductor manufacturing technology, and in particular, to a defect detection method, a defect detection apparatus, a defect detection system, and a computer readable medium.
Background
The wafer needs to undergo many process steps in the process of manufacturing chips, and when a defect occurs in one of the steps, the wafer can directly influence the yield of chips corresponding to the subsequent defect position, thereby influencing the processing efficiency of the wafer or the chips. Therefore, defects on a wafer need to be detected, however, the defect detection method in the prior art can only detect all defects of the wafer before a certain process step, and is difficult to detect defects only occurring in the process step, which is not beneficial to improving the chip yield.
Accordingly, it is desirable to provide a defect detection method that effectively detects defect variations caused by a single process step.
Disclosure of Invention
Accordingly, to overcome at least some of the shortcomings and problems of the prior art, embodiments of the present invention provide a defect detection method, a defect detection apparatus, a defect detection system, and a computer readable medium capable of detecting a defect change caused by a single process step.
Specifically, in one aspect, an embodiment of the present invention provides a defect detection method, including: acquiring a first defect information set corresponding to a first sample and a second defect information set corresponding to a second sample; the first sample and the second sample are workpiece samples obtained after the workpiece to be measured is processed in different process steps; the first defect information set comprises a plurality of first position information corresponding to the first defects on the first sample one by one; the second defect information set includes a plurality of second location information corresponding to a plurality of second defects on the second sample one-to-one; determining a target verification defect information set corresponding to a target first defect of the plurality of first defects according to the plurality of second position information; the target verification defect information set is a subset of the second defect information set; and detecting target alignment second defects which are the same as the actual positions of the target first defects on the workpiece to be detected in the second defects according to the target first position information corresponding to the target first defects and the target checking defect information set.
In one embodiment, the defect detection method further comprises: outputting a defect marking image of the workpiece to be detected according to detection results of the target first defect detection by taking each first defect as a target first defect; the detection result is that the target alignment second defect corresponding to the target first defect exists in the plurality of second defects, and the position corresponding to the target alignment second defect is marked as an original defect in the defect marking image; detecting that the target alignment second defect corresponding to the target first defect does not exist in the plurality of second defects, and marking the position corresponding to the target first defect mark as an elimination defect in the defect mark image; and marking positions corresponding to the second defects except the original defects in the plurality of second defects as new defects in the defect marking image.
In one embodiment, the workpiece to be measured includes a plurality of dies to be measured; the target first position information comprises target first grain number information; the target first crystal grain number information indicates the position of the crystal grain to be detected, where the target first defect is located on the first sample; each of the second location information includes second die number information; each piece of second crystal grain number information represents the position of the corresponding second defect on the second sample, where the second defect is located, of the crystal grain to be detected; the determining, from the plurality of second location information, a target collation defect information set corresponding to a target first defect of the plurality of first defects, including: and selecting the second position information, which is the same as the target first die number information, as an element in the target verification defect information set.
In one embodiment, the set of target verification defect information includes a plurality of target verification location information in one-to-one correspondence with a plurality of target verification defects in the plurality of second defects; the target first position information comprises coordinate information of a first defect of the target; each of the target collation position information includes coordinate information of the target collation defect corresponding thereto; the detecting, according to the target first position information corresponding to the target first defect and the target checking defect information set, a target alignment second defect of the plurality of second defects, which is the same as the actual position of the target first defect on the workpiece to be detected, includes: determining target calculated position information among the plurality of target collation position information; calculating according to the coordinate information of the first position information of the target and the coordinate information of the calculated position information of the target to obtain a first calculated distance value; the first distance value is the distance between the target checking defect corresponding to the target calculated position information and the target first defect; detecting the target alignment second defect of the plurality of second defects according to the first calculated distance value.
In one embodiment, the detecting, according to the target first position information corresponding to the target first defect and the target verification defect information set, a target alignment second defect, which is the same as an actual position of the target first defect on the workpiece to be detected, in the plurality of second defects specifically includes: calculating to obtain a plurality of first calculation distances by taking each target check position information as the target calculation position information; and determining the target checking defect corresponding to the minimum distance value as the target alignment second defect according to the fact that the minimum distance value in the plurality of first calculated distance values is smaller than a preset threshold value.
In one embodiment, the determining the target calculation position information of the plurality of target collation position information includes: determining that the target checking defect which is detected as the target alignment second defect is a defect to be removed; determining position information to be rejected corresponding to the defect to be rejected in the target checking position information; selecting the calculated position information for the target except the position information to be removed in the target checking position information.
In another aspect, another embodiment of the present invention provides a defect detecting apparatus, including: the defect information acquisition module is used for acquiring a first defect information set corresponding to the first sample and a second defect information set corresponding to the second sample; the first sample and the second sample are workpiece samples obtained after the workpiece to be measured is processed in different process steps; the first defect information set comprises a plurality of first position information corresponding to the first defects on the first sample one by one; the second defect information set includes a plurality of second location information corresponding to a plurality of second defects on the second sample one-to-one; a screening module, configured to determine a target verification defect information set corresponding to a target first defect in the plurality of first defects according to the plurality of second location information; the target verification defect information set is a subset of the second defect information set; and the detection module is used for detecting target alignment second defects which are the same as the actual positions of the target first defects on the workpiece to be detected in the plurality of second defects according to the target first position information corresponding to the target first defects and the target checking defect information set.
In one embodiment, the defect detecting device further includes an output marking module for outputting a defect marking image of the workpiece to be detected according to detection results of the target first defect detection with each of the first defects, respectively; the detection result is that the target alignment second defect corresponding to the target first defect exists in the plurality of second defects, and the position corresponding to the target alignment second defect is marked as an original defect in the defect marking image; detecting that the target alignment second defect corresponding to the target first defect does not exist in the plurality of second defects, and marking the position corresponding to the target first defect mark as an elimination defect in the defect mark image; and marking positions corresponding to the second defects except the original defects in the plurality of second defects as new defects in the defect marking image.
In another aspect, another embodiment of the present invention provides a defect detection system, including a processor and a memory connected to the processor, where the memory stores instructions executed by the processor, and the instructions cause the processor to perform operations to perform a defect detection method according to any one of the foregoing embodiments.
In another aspect, another embodiment of the present invention provides a computer-readable medium storing computer-readable instructions comprising instructions for performing a defect detection method as set forth in any one of the preceding claims.
As can be seen from the above, the above embodiments of the present invention can achieve one or more of the following advantages: and detecting the target alignment second defect which is the same as the actual position of the target first curve on the workpiece to be detected by respectively acquiring a first defect information set and a second defect information set which are respectively corresponding to the first sample and the second sample which are obtained after the workpiece to be detected is processed in different process steps. When each first defect is respectively taken as a target first defect, all the unchanged defects on the second sample relative to the first sample can be detected, so that all the changed defects can be detected, and the defect change caused by the corresponding process step of the second sample can be judged.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a flow chart of a defect detection method according to an embodiment of the invention.
Fig. 2 is a schematic structural diagram of a defect detecting device according to an embodiment of the present invention.
FIG. 3 is a schematic diagram of a defect detection system according to an embodiment of the present invention.
Fig. 4 is a schematic structural diagram of a computer readable medium according to an embodiment of the present invention.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings.
In order that those skilled in the art will better understand the technical solutions of the present invention, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
It should be further noted that the division of the embodiments in the present invention is only for convenience of description, and should not be construed as a specific limitation, and features in the various embodiments may be combined and mutually referenced without contradiction.
[ First embodiment ]
As shown in fig. 1, a first embodiment of the present invention provides a defect detection method, which includes steps S11 to S13.
S11: acquiring a first defect information set corresponding to a first sample and a second defect information set corresponding to a second sample; the first sample and the second sample are workpiece samples obtained after the workpiece to be measured is processed in different process steps; the first defect information set comprises a plurality of first position information corresponding to the first defects on the first sample one by one; the second defect information set includes a plurality of second location information corresponding to a plurality of second defects on the second sample one-to-one;
S12: determining a target verification defect information set corresponding to a target first defect of the plurality of first defects according to the plurality of second position information; the target verification defect information set is a subset of the second defect information set;
s13: and detecting target alignment second defects which are the same as the actual positions of the target first defects on the workpiece to be detected in the second defects according to the target first position information corresponding to the target first defects and the target checking defect information set.
The first sample in step S11 may be a workpiece sample obtained after the workpiece to be measured is processed in any one of the processing steps, where the processing step may be referred to as a first process step, and the workpiece to be measured is, for example, a wafer, and the first sample may be referred to as wafer1. The second sample is a workpiece sample obtained after the workpiece to be measured has been processed with a process step subsequent to the first process step, which may be referred to as a second process step, which may be denoted wafer2. It is understood that wafer1 is processed into wafer2 in the second process step, and wafer1 and wafer2 are the same workpiece to be measured, and are merely products of different process steps, so that defects thereon are different. Wherein some of the plurality of second defects on wafer2 are identical to the actual locations of the plurality of first defects on wafer1, which defects were generated prior to the first process step and which were unchanged in the second process step. Some of the second defects on wafer2 are not present before the first process step, and these may be referred to as new defects, which are generated in the second process step. Some of the first defects on wafer1 are present in the first process step and eliminated in the second process step, which may be referred to as eliminated defects.
Since the number of defects on one workpiece sample is very large, the wafer position is deviated during each defect inspection, so that it cannot be determined which defects are defects which have not changed in the second process step, which are new defects, and which are eliminated defects by performing defect inspection on wafer1 and wafer2 alone. The solution proposed in this embodiment is to collect defect information sets of wafer1 and wafer2 respectively, and perform the defect detection method in steps S11 to S13 according to the first defect information set and the second defect information set, so as to detect whether there is a second defect with the same target alignment as the actual position of the first defect in the plurality of second defects. And respectively taking each first defect in the plurality of first defects as a target first defect, namely detecting all the unchanged defects of the second sample relative to the first sample, and detecting all the changed defects, so as to judge the defect change caused by the corresponding process step of the second sample. For convenience of description, in the process of detecting with the plurality of first defects as the target first defects in turn, respectively, "current target first defect" and "last target first defect", "previous target first defect", and the like are taken as the distinction of different detection processes.
Further, the defect detecting method may further include, for example, step S14: outputting a defect marking image of the workpiece to be detected according to detection results of the target first defect detection by taking each first defect as a target first defect; the detection result is that the target alignment second defect corresponding to the target first defect exists in the plurality of second defects, and the position corresponding to the target alignment second defect is marked as an original defect in the defect marking image; detecting that the target alignment second defect corresponding to the target first defect does not exist in the plurality of second defects, and marking the position corresponding to the target first defect mark as an elimination defect in the defect mark image; and marking positions corresponding to the second defects except the original defects in the plurality of second defects as new defects in the defect marking image.
For example, wafer1 includes n first defects Q1, wafer2 includes m second defects Q2, n and m are positive integers and may be equal or unequal. For example, the ith first defect q1_i of the n first defects is taken as a target first defect, and if the jth second defect q2_j of the m second defects is detected as a target alignment second defect corresponding to q1_i, the defect position corresponding to q2_j (or q1_i) is marked as an original defect in the defect marking image. If it is detected that the target corresponding to q1_i is not aligned with the second defect among the m second defects, the position corresponding to q1_i is marked as an erasure defect in the defect mark image. After all the first defects are detected in turn, for example, k second defects are marked as original defects, and the positions corresponding to the remaining m-k second defects are marked as new defects. By means of the defect marking image, the positions of the increase or decrease of defects due to the second process step can be intuitively determined.
The first defect information set includes, for example, total number information of the plurality of first defects, and further includes a plurality of first defect information corresponding to the plurality of first defects one by one, where each first defect information includes first position information indicating a position where the corresponding first defect is located, size information indicating a shape size of the corresponding first defect, and so on. The second defect information set includes, for example, total number information of the plurality of second defects, and also includes a plurality of second defect information corresponding to the plurality of second defects one by one, where each second defect information includes second position information of a position where the corresponding second defect is located, size information indicating a shape size of the corresponding second defect, and so on. More specifically, the workpiece to be measured includes a plurality of dies to be measured. Each of the first location information includes first die number information. The first grain number information indicates the position of the to-be-tested grain on the first sample, where the first defect corresponding to the first grain number information is located. The target first location information includes target first die number information. The target first die number information indicates a location of a die to be tested on the first sample where the target first defect is located. Each of the second location information includes second die number information. Each second die number information indicates a position of a die to be tested on the second sample where the second defect corresponding to the second die number information is located. When the second die number information of the second position information is the same as the first die number information of the first position information, the first defect and the die to be tested where the second defect are located are indicated to be the same die to be tested. More specifically, each first location information further includes coordinate information of its corresponding first defect, and each second location information further includes coordinate information of its corresponding second defect. The target first location information includes coordinate information of the target first defect. The first defect information set and the second defect information set may be detected by a conventional defect detecting device, for example, in advance, and stored in a memory, and may be read from the memory when the defect detecting method provided in the present embodiment is performed.
For example, the first defect information or the second defect information may be expressed as (X-coordinate, Y-coordinate, X-direction defect size, Y-direction defect size, die number information), for example. The die number information may be, for example, in a form of a relative coordinate of the die to be measured on the workpiece to be measured (for example, a number corresponding to the die to be measured, or the like, so long as the die to be measured can be represented by a position of the die to be measured on the workpiece to be measured. Wherein the X and Y coordinates are the relative coordinates of the defect on the die under test where it is located.
Further, step S12 specifically includes:
step S121: and selecting second position information, which is the same as the target first die number information, as an element in the target verification defect information set.
That is, second location information corresponding to a second defect of which the target first defect is located on the same die to be tested is selected in step S121. When the second position information which is the same as the first die number information of the target does not exist, the target checking defect information set is an empty set. For example, when the target verification defect information set is an empty set, it may be directly determined in step S13 that the target second alignment defect, which is the same as the actual position of the target first defect on the workpiece to be measured, does not exist among the plurality of second defects as a result of the detection. The location corresponding to the target first defect mark may be marked as an erasure defect in step S14. Indicating that the target first defect was eliminated in the second process step. When the second die number information of only one second location information is identical to the target first number die, the target collation defect information set includes one second location information. When the second die number information of the plurality of second location information is identical to the target first number die, the target collation defect information set includes the plurality of second location information. When one or more second position information is included in the target verification defect information set, further processing is required to select a target second alignment defect in step S13. Taking the example that the target verification defect information set includes a plurality of pieces of second position information, the second position information of which the second die number information is the same as the target first die number information is referred to as target verification position information, and the second defect corresponding to the target verification position information is referred to as target verification defect. That is, the target collation defect information set includes a plurality of target collation position information in one-to-one correspondence with a plurality of target collation defects in the plurality of second defects. Wherein each of the target collation position information includes coordinate information of the target collation defect corresponding thereto.
The step S13 specifically includes, for example:
step S131: determining target calculation position information among the plurality of target collation position information;
Step S132: calculating to obtain a first calculated distance value according to the coordinate information of the first position information of the target and the coordinate information of the calculated position information of the target; the first distance value is the distance between the target checking defect corresponding to the target calculation position information and the target first defect;
Step S133: detecting a target alignment second defect of the plurality of second defects according to the first calculated distance value.
In step S13, there may be two embodiments, for example, for any one of the first defects as the target first defect, each piece of target verification position information may be used as target calculation position information in step S131, and a plurality of first calculation distance values may be calculated in step S132. In step S133, according to the minimum distance value of the plurality of first calculated distance values being smaller than the preset threshold, it is determined that the target checking defect corresponding to the minimum distance value is the target alignment second defect. If the minimum distance value is not smaller than the preset threshold value, determining that the current target first defect corresponding to the target alignment second defect does not exist in the plurality of second defects. Wherein the first distance value is an absolute value.
In the process of detecting each first defect in turn as the target first defect, since one or several target verification defects may have been determined to be one target alignment second defect in the previous detection step among the plurality of target verification defects, the calculation of the target verification defects that have been determined to be the target alignment second defects may not be performed. Thus, in another embodiment, step S131 may specifically include: determining that the target checking defect which is detected as the target alignment second defect is a defect to be removed; determining position information to be rejected corresponding to the defect to be rejected in the target checking position information; selecting the calculated position information for the target except the position information to be removed in the target checking position information. The decision steps can be reduced.
With reference to the foregoing embodiment in which the target collation defect information set includes a plurality of pieces of second position information, when the target collation defect information set includes only one piece of second defect information (referred to as target collation position information). And calculating a first calculated distance value according to the target checking position information and the target first position information, and determining a second defect corresponding to the target checking position information as a target alignment second defect when the first calculated distance value is judged to be smaller than a preset threshold value. If the second defect corresponding to the one target verification position information is determined to be the target alignment second defect when the previous target first defect is detected, the current target first defect can be directly determined to be free of the target alignment second defect without calculation.
For convenience of description, for example, taking one of the dies to be tested as an example, there are four first defects A, B, D, E in the die to be tested, and 5 second defects a, b, c, d, f in the die to be tested. When the first defect is targeted at a, in step S12, the second die number information according to the second location information corresponding to a, b, c, d, f is the same as the targeted first die number information corresponding to a, a, b, c, d, f is an element in the targeted checking defect information set, that is, the second location information corresponding to a, b, c, d, f is the targeted checking location information. In step S13, the distances A to a, b, c, d, f are calculated to obtain 5 first calculated distance values, which are respectively denoted as A-a, A-b, A-c, A-d, A-f, for example. Wherein A-a is a minimum distance value and is smaller than a preset threshold. And determining that a is the target alignment second defect corresponding to A. And taking B as the target first defect, wherein B is the current target first defect in the process, and A is the last target first defect. In step S13, the distances B to a, B, c, d, f are calculated, respectively, to obtain 5 first calculated distances, for example, B-a, B-B, B-c, B-d, B-f are marked, wherein B-B is the minimum distance value and is smaller than the preset threshold value. And determining that the target corresponding to B is aligned with the second defect. Of course, since a has been confirmed as the last target corresponding to the last target first defect a when detected last time is aligned to the second defect, a can be confirmed as the defect to be removed in the calculation, the target checking position information corresponding to a can be removed, and only B-B, B-c, B-d and B-f can be calculated, so that the calculation amount can be reduced. By analogy, when D is the first defect, only D-c, D-D and D-f can be calculated, for example, D-D is the minimum value, and D is determined to be the target corresponding to D and aims at the second defect. Only E-c, E-f may be calculated when E is the target first defect. E.g., E-c is a minimum distance value but not less than a preset threshold, it is determined that no target corresponding to E among the second defects is aligned with the second defect. According to the detection result, A (a), B (B) and D (D) can be marked as original defects in the defect marking image of the workpiece to be detected, E is marked as elimination defects, and c and f are marked as new defects. Of course, the above is merely illustrative, and the present embodiment is not limited thereto.
[ Second embodiment ]
A second embodiment of the present invention provides a defect detecting apparatus 100 for performing the defect detecting method provided by the foregoing first embodiment. Referring to fig. 2, the defect detecting apparatus 100 includes a defect information acquiring module 101, a screening module 102, and a detecting module 103. The defect information acquiring module 101 is configured to perform the foregoing step S11, the filtering module 102 is configured to perform the step S12, and the detecting module 103 is configured to perform the foregoing step S13. More specifically, the defect detecting apparatus 100 may further include an output marking module for performing the aforementioned step S14.
For details and details of the defect detection method, please refer to the description of the first embodiment, and the detailed description is omitted here. The technical effects of the defect detection apparatus provided in the second embodiment of the present invention are the same as those of the defect detection method in the foregoing first embodiment, and will not be described herein.
[ Third embodiment ]
A defect detection system 200 according to a third embodiment of the present invention includes, for example, a processor 201 and a memory 202 electrically connected to the processor 201, where the memory 202 stores instructions executed by the processor 201, and the instructions cause the processor 201 to perform operations to perform any of the defect detection methods of the first embodiment.
The functions and technical effects of the defect detection system 200 according to the third embodiment of the present invention can be referred to the related description of the defect detection method in the first embodiment, and are not repeated here.
[ Fourth embodiment ]
A fourth embodiment of the present invention provides a computer readable medium 500, the computer readable medium 500 storing computer readable instructions 501, the computer readable instructions 501 comprising instructions for performing any one of the defect detection methods of the foregoing first embodiment.
The functions and technical effects of the computer readable medium 500 according to the fourth embodiment of the present invention may refer to the technical effects of the defect detection method according to the foregoing first embodiment, and are not described herein.
It should be noted that, in several embodiments provided by the present application, it should be understood that the disclosed systems, devices and/or methods may be implemented in other manners. For example, the above-described apparatus embodiments are merely illustrative, and the division of the units/modules is merely a logical function division, and there may be additional divisions when actually implemented, e.g., multiple units or modules may be combined or integrated into another system, or some features may be omitted or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be an indirect coupling or communication connection via some interfaces, devices or units, which may be in electrical, mechanical or other form.
The units/modules described as separate units may or may not be physically separate, and units/modules may or may not be physically units, may be located in one place, or may be distributed on multiple network units. Some or all of the units/modules may be selected according to actual needs to achieve the purpose of the embodiment.
In addition, each functional unit/module in the embodiments of the present invention may be integrated in one processing unit/module, or each unit/module may exist alone physically, or two or more units/modules may be integrated in one unit/module. The integrated units/modules may be implemented in hardware or in hardware plus software functional units/modules.
The integrated units/modules implemented in the form of software functional units/modules described above may be stored in a computer readable storage medium. The software functional units described above are stored in a storage medium and include instructions for causing one or more processors of a computer device (which may be a personal computer, a server, or a network device, etc.) to perform some steps of the methods described in the embodiments of the present invention.
The present invention is not limited to the above-mentioned embodiments, but is intended to be limited to the following embodiments, and any modifications, equivalent changes and variations in the above-mentioned embodiments can be made by those skilled in the art without departing from the scope of the present invention.

Claims (10)

1. A defect detection method, comprising:
Acquiring a first defect information set corresponding to a first sample and a second defect information set corresponding to a second sample; the first sample and the second sample are workpiece samples obtained after the workpiece to be measured is processed in different process steps; the first defect information set comprises a plurality of first position information corresponding to the first defects on the first sample one by one; the second defect information set includes a plurality of second location information corresponding to a plurality of second defects on the second sample one-to-one;
Determining a target verification defect information set corresponding to a target first defect of the plurality of first defects according to the plurality of second position information; the target verification defect information set is a subset of the second defect information set;
and detecting target alignment second defects which are the same as the actual positions of the target first defects on the workpiece to be detected in the second defects according to the target first position information corresponding to the target first defects and the target checking defect information set.
2. The defect detection method of claim 1, further comprising:
Outputting a defect marking image of the workpiece to be detected according to detection results of the target first defect detection by taking each first defect as a target first defect; wherein the target alignment second defect corresponding to the target first defect is detected to exist in the plurality of second defects, and the position corresponding to the target alignment second defect is marked as an original defect in the defect marking image; detecting that the target alignment second defect corresponding to the target first defect does not exist in the plurality of second defects, and marking the position corresponding to the target first defect mark as an elimination defect in the defect mark image; and marking positions of the plurality of second defects, which correspond to the second defects except the original defect and the eliminated defect, as new defects in the defect marking image.
3. The defect inspection method of claim 1 wherein the workpiece to be inspected comprises a plurality of dies to be inspected; the target first position information comprises target first grain number information; the target first crystal grain number information indicates the position of the crystal grain to be detected, where the target first defect is located on the first sample; each of the second location information includes second die number information; each piece of second crystal grain number information represents the position of the corresponding second defect on the second sample, where the second defect is located, of the crystal grain to be detected;
The determining, from the plurality of second location information, a target collation defect information set corresponding to a target first defect of the plurality of first defects, including:
and selecting the second position information, which is the same as the target first die number information, as an element in the target verification defect information set.
4. The defect detection method of claim 1, wherein the set of target verification defect information includes a plurality of target verification position information in one-to-one correspondence with a plurality of target verification defects in the plurality of second defects; the target first position information comprises coordinate information of a first defect of the target; each of the target collation position information includes coordinate information of the target collation defect corresponding thereto;
The detecting, according to the target first position information corresponding to the target first defect and the target checking defect information set, a target alignment second defect of the plurality of second defects, which is the same as the actual position of the target first defect on the workpiece to be detected, includes:
Determining target calculated position information among the plurality of target collation position information;
Calculating according to the coordinate information of the first position information of the target and the coordinate information of the calculated position information of the target to obtain a first calculated distance value; the first distance value is the distance between the target checking defect corresponding to the target calculated position information and the target first defect;
detecting the target alignment second defect of the plurality of second defects according to the first calculated distance value.
5. The defect detection method of claim 4, wherein the detecting a target alignment second defect of the plurality of second defects that is the same as an actual position of the target first defect on the workpiece to be detected based on the target first position information corresponding to the target first defect and the target verification defect information set, specifically comprises:
Calculating to obtain a plurality of first calculation distances by taking each target check position information as the target calculation position information;
And determining the target checking defect corresponding to the minimum distance value as the target alignment second defect according to the fact that the minimum distance value in the plurality of first calculated distance values is smaller than a preset threshold value.
6. The defect detection method of claim 4, wherein the determining target calculation position information among the plurality of target collation position information comprises:
determining that the target checking defect which is detected as the target alignment second defect is a defect to be removed;
determining position information to be rejected corresponding to the defect to be rejected in the target checking position information; selecting the calculated position information for the target except the position information to be removed in the target checking position information.
7. A defect detection apparatus, comprising:
The defect information acquisition module is used for acquiring a first defect information set corresponding to the first sample and a second defect information set corresponding to the second sample; the first sample and the second sample are workpiece samples obtained after the workpiece to be measured is processed in different process steps; the first defect information set comprises a plurality of first position information corresponding to the first defects on the first sample one by one; the second defect information set includes a plurality of second location information corresponding to a plurality of second defects on the second sample one-to-one;
A screening module, configured to determine a target verification defect information set corresponding to a target first defect in the plurality of first defects according to the plurality of second location information; the target verification defect information set is a subset of the second defect information set;
and the detection module is used for detecting target alignment second defects which are the same as the actual positions of the target first defects on the workpiece to be detected in the plurality of second defects according to the target first position information corresponding to the target first defects and the target checking defect information set.
8. The defect detecting apparatus according to claim 7, further comprising an output marking module configured to output a defect marking image of the workpiece to be detected based on detection results of the target first defect detection with each of the first defects, respectively; the detection result is that the target alignment second defect corresponding to the target first defect exists in the plurality of second defects, and the position corresponding to the target alignment second defect is marked as an original defect in the defect marking image; detecting that the target alignment second defect corresponding to the target first defect does not exist in the plurality of second defects, and marking the position corresponding to the target first defect mark as an elimination defect in the defect mark image; and marking positions corresponding to the second defects except the original defects in the plurality of second defects as new defects in the defect marking image.
9. A defect detection system comprising a processor and a memory coupled to the processor, the memory storing instructions for execution by the processor and the instructions causing the processor to perform operations to perform the defect detection method of any of claims 1-6.
10. A computer readable medium having stored thereon computer readable instructions comprising instructions for performing the defect detection method of any of claims 1-6.
CN202310020513.8A 2023-01-06 2023-01-06 Defect detection method, device, system and computer readable medium Pending CN118311051A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310020513.8A CN118311051A (en) 2023-01-06 2023-01-06 Defect detection method, device, system and computer readable medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310020513.8A CN118311051A (en) 2023-01-06 2023-01-06 Defect detection method, device, system and computer readable medium

Publications (1)

Publication Number Publication Date
CN118311051A true CN118311051A (en) 2024-07-09

Family

ID=91722903

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310020513.8A Pending CN118311051A (en) 2023-01-06 2023-01-06 Defect detection method, device, system and computer readable medium

Country Status (1)

Country Link
CN (1) CN118311051A (en)

Similar Documents

Publication Publication Date Title
US9916653B2 (en) Detection of defects embedded in noise for inspection in semiconductor manufacturing
KR102065821B1 (en) Methods and systems for detecting repeating defects on semiconductor wafers using design data
US8606536B2 (en) Methods and apparatus for hybrid outlier detection
US20130226491A1 (en) Methods and apparatus for hybrid outlier detection
US8170707B2 (en) Failure detecting method, failure detecting apparatus, and semiconductor device manufacturing method
CN109285791B (en) Design layout-based rapid online defect diagnosis, classification and sampling method and system
US20180275189A1 (en) Methods and Systems for Inline Parts Average Testing and Latent Reliability Defect Detection
CN1672038A (en) System and method for process variation monitor
KR100359599B1 (en) Apparatus and method for estimating chip yield
CN102435616B (en) Monitoring method of stability of crystal edge detector
JP2008166644A (en) Integrated circuit device abnormality detection apparatus, method and program
JP4658206B2 (en) Inspection result analysis method and inspection result analysis apparatus, abnormal equipment detection method and abnormal equipment detection apparatus, program for causing a computer to execute the inspection result analysis method or abnormal equipment detection method, and a computer-readable record recording the program Medium
US6539272B1 (en) Electric device inspection method and electric device inspection system
CN118311051A (en) Defect detection method, device, system and computer readable medium
KR100352315B1 (en) Fault distribution analyzing system
CN114579391A (en) Abnormal data detection method, system, medium and terminal
JP2000243794A (en) Analysis of semiconductor wafer
CN116448960A (en) Chip quality detection method and device, electronic equipment and storage medium
CN114911085A (en) Method for analyzing defects
US20170351804A1 (en) Electrically Relevant Placement of Metrology Targets Using Design Analysis
JP2000077495A (en) Inspection system and manufacture of electronic device using the same
US20040175943A1 (en) System and method of pattern detection for semiconductor wafer map data
JP2007227705A (en) Simulation system, simulation program, and simulation method
US20190164264A1 (en) Method and system for diagnosing a semiconductor wafer
CN118315317A (en) Workpiece positioning method, device, system and computer readable medium

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination