CN118272883A - Copper core ball solder layer electroplating solution and preparation method and electroplating process method thereof - Google Patents
Copper core ball solder layer electroplating solution and preparation method and electroplating process method thereof Download PDFInfo
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- CN118272883A CN118272883A CN202410693284.0A CN202410693284A CN118272883A CN 118272883 A CN118272883 A CN 118272883A CN 202410693284 A CN202410693284 A CN 202410693284A CN 118272883 A CN118272883 A CN 118272883A
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- Prior art keywords
- copper
- salt
- tin
- silver
- solder layer
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- 238000009713 electroplating Methods 0.000 title claims abstract description 54
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 51
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 38
- 230000008569 process Effects 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 238000007747 plating Methods 0.000 claims abstract description 54
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical class [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000003756 stirring Methods 0.000 claims abstract description 29
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims abstract description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000000654 additive Substances 0.000 claims abstract description 23
- 239000008139 complexing agent Substances 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910021626 Tin(II) chloride Inorganic materials 0.000 claims abstract description 15
- 150000001879 copper Chemical class 0.000 claims abstract description 15
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 12
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910000969 tin-silver-copper Inorganic materials 0.000 claims abstract description 11
- 230000004913 activation Effects 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 8
- 229940098779 methanesulfonic acid Drugs 0.000 claims abstract description 7
- 238000001816 cooling Methods 0.000 claims abstract description 6
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000006386 neutralization reaction Methods 0.000 claims abstract description 5
- 238000005238 degreasing Methods 0.000 claims abstract 2
- 239000010949 copper Substances 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 230000000996 additive effect Effects 0.000 claims description 18
- 239000011135 tin Substances 0.000 claims description 16
- 229910052718 tin Inorganic materials 0.000 claims description 15
- 230000001502 supplementing effect Effects 0.000 claims description 13
- 229910052709 silver Inorganic materials 0.000 claims description 11
- 239000004332 silver Substances 0.000 claims description 11
- 238000004448 titration Methods 0.000 claims description 11
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims description 10
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- -1 styryl benzophenone Chemical compound 0.000 claims description 8
- BSXVKCJAIJZTAV-UHFFFAOYSA-L copper;methanesulfonate Chemical group [Cu+2].CS([O-])(=O)=O.CS([O-])(=O)=O BSXVKCJAIJZTAV-UHFFFAOYSA-L 0.000 claims description 7
- MLKQJVFHEUORBO-UHFFFAOYSA-M silver;methanesulfonate Chemical group [Ag+].CS([O-])(=O)=O MLKQJVFHEUORBO-UHFFFAOYSA-M 0.000 claims description 7
- 239000001509 sodium citrate Substances 0.000 claims description 7
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 claims description 6
- WHOZNOZYMBRCBL-OUKQBFOZSA-N (2E)-2-Tetradecenal Chemical compound CCCCCCCCCCC\C=C\C=O WHOZNOZYMBRCBL-OUKQBFOZSA-N 0.000 claims description 5
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 5
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 claims description 5
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 claims description 5
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 5
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 claims description 5
- AICMYQIGFPHNCY-UHFFFAOYSA-J methanesulfonate;tin(4+) Chemical group [Sn+4].CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O.CS([O-])(=O)=O AICMYQIGFPHNCY-UHFFFAOYSA-J 0.000 claims description 5
- CJGYQECZUAUFSN-UHFFFAOYSA-N oxygen(2-);tin(2+) Chemical compound [O-2].[Sn+2] CJGYQECZUAUFSN-UHFFFAOYSA-N 0.000 claims description 5
- 229940044654 phenolsulfonic acid Drugs 0.000 claims description 5
- 229910001923 silver oxide Inorganic materials 0.000 claims description 5
- RCIVOBGSMSSVTR-UHFFFAOYSA-L stannous sulfate Chemical compound [SnH2+2].[O-]S([O-])(=O)=O RCIVOBGSMSSVTR-UHFFFAOYSA-L 0.000 claims description 5
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(II) oxide Inorganic materials [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 claims description 5
- 229910000375 tin(II) sulfate Inorganic materials 0.000 claims description 5
- KJPRLNWUNMBNBZ-QPJJXVBHSA-N (E)-cinnamaldehyde Chemical compound O=C\C=C\C1=CC=CC=C1 KJPRLNWUNMBNBZ-QPJJXVBHSA-N 0.000 claims description 4
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 4
- 239000005751 Copper oxide Substances 0.000 claims description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 4
- 239000012965 benzophenone Substances 0.000 claims description 4
- 229940117916 cinnamic aldehyde Drugs 0.000 claims description 4
- KJPRLNWUNMBNBZ-UHFFFAOYSA-N cinnamic aldehyde Natural products O=CC=CC1=CC=CC=C1 KJPRLNWUNMBNBZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910000431 copper oxide Inorganic materials 0.000 claims description 4
- UUWCBFKLGFQDME-UHFFFAOYSA-N platinum titanium Chemical compound [Ti].[Pt] UUWCBFKLGFQDME-UHFFFAOYSA-N 0.000 claims description 4
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 claims description 4
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 238000002474 experimental method Methods 0.000 claims description 3
- BWHOZHOGCMHOBV-BQYQJAHWSA-N trans-benzylideneacetone Chemical compound CC(=O)\C=C\C1=CC=CC=C1 BWHOZHOGCMHOBV-BQYQJAHWSA-N 0.000 claims description 3
- 239000001211 (E)-4-phenylbut-3-en-2-one Substances 0.000 claims description 2
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 claims description 2
- BZOVBIIWPDQIHF-UHFFFAOYSA-N 3-hydroxy-2-methylbenzenesulfonic acid Chemical compound CC1=C(O)C=CC=C1S(O)(=O)=O BZOVBIIWPDQIHF-UHFFFAOYSA-N 0.000 claims description 2
- 235000010323 ascorbic acid Nutrition 0.000 claims description 2
- 229960005070 ascorbic acid Drugs 0.000 claims description 2
- 239000011668 ascorbic acid Substances 0.000 claims description 2
- 229930008407 benzylideneacetone Natural products 0.000 claims description 2
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 claims description 2
- PSZYNBSKGUBXEH-UHFFFAOYSA-N naphthalene-1-sulfonic acid Chemical compound C1=CC=C2C(S(=O)(=O)O)=CC=CC2=C1 PSZYNBSKGUBXEH-UHFFFAOYSA-N 0.000 claims description 2
- 229940079877 pyrogallol Drugs 0.000 claims description 2
- 239000004094 surface-active agent Substances 0.000 claims description 2
- RYCLIXPGLDDLTM-UHFFFAOYSA-J tetrapotassium;phosphonato phosphate Chemical compound [K+].[K+].[K+].[K+].[O-]P([O-])(=O)OP([O-])([O-])=O RYCLIXPGLDDLTM-UHFFFAOYSA-J 0.000 claims description 2
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 claims description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 2
- 239000006185 dispersion Substances 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 58
- 238000002791 soaking Methods 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 7
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 6
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 4
- 230000003213 activating effect Effects 0.000 description 4
- 229910001431 copper ion Inorganic materials 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 229910001432 tin ion Inorganic materials 0.000 description 4
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 3
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 3
- NEIHULKJZQTQKJ-UHFFFAOYSA-N [Cu].[Ag] Chemical compound [Cu].[Ag] NEIHULKJZQTQKJ-UHFFFAOYSA-N 0.000 description 3
- 235000019270 ammonium chloride Nutrition 0.000 description 3
- SOIFLUNRINLCBN-UHFFFAOYSA-N ammonium thiocyanate Chemical compound [NH4+].[S-]C#N SOIFLUNRINLCBN-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 3
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 3
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 description 3
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 3
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 3
- 229910000406 trisodium phosphate Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 2
- 101150003085 Pdcl gene Proteins 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 229910052740 iodine Inorganic materials 0.000 description 2
- 239000011630 iodine Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- KJFMBFZCATUALV-UHFFFAOYSA-N phenolphthalein Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)C2=CC=CC=C2C(=O)O1 KJFMBFZCATUALV-UHFFFAOYSA-N 0.000 description 2
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 description 2
- 235000019345 sodium thiosulphate Nutrition 0.000 description 2
- 239000012086 standard solution Substances 0.000 description 2
- 235000019698 starch Nutrition 0.000 description 2
- 239000008107 starch Substances 0.000 description 2
- MIMUSZHMZBJBPO-UHFFFAOYSA-N 6-methoxy-8-nitroquinoline Chemical compound N1=CC=CC2=CC(OC)=CC([N+]([O-])=O)=C21 MIMUSZHMZBJBPO-UHFFFAOYSA-N 0.000 description 1
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- BWHOZHOGCMHOBV-UHFFFAOYSA-N Benzalacetone Natural products CC(=O)C=CC1=CC=CC=C1 BWHOZHOGCMHOBV-UHFFFAOYSA-N 0.000 description 1
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 1
- 239000005750 Copper hydroxide Substances 0.000 description 1
- AFVFQIVMOAPDHO-UHFFFAOYSA-M Methanesulfonate Chemical compound CS([O-])(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-M 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910001956 copper hydroxide Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 description 1
- 229910000360 iron(III) sulfate Inorganic materials 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000012047 saturated solution Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- IUTCEZPPWBHGIX-UHFFFAOYSA-N tin(2+) Chemical compound [Sn+2] IUTCEZPPWBHGIX-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Abstract
The invention discloses copper core ball solder layer electroplating solution, a preparation method thereof and an electroplating process method. Adding water with the specified volume of 30-35% into an electrolytic tank, adding methanesulfonic acid, stirring, and cooling to below 30 ℃; then complexing agent, silver salt, copper salt and tin salt are added in sequence, after pure water is supplemented to a specified volume, additives are added. The specific process comprises degreasing, rust removal, activation, nickel plating, tin-silver-copper plating, neutralization and drying. The invention is simple and quick, easy to operate, capable of electroplating thicker plating layers, uniform in surface, good in dispersion capability, strong in covering capability and strong in practicability.
Description
Technical Field
The invention relates to the technical field of electronic product packaging, in particular to copper core ball solder layer electroplating solution, a preparation method thereof and an electroplating process method.
Background
In recent years, along with the demand of light weight, slimming and multifunction of electronic products, 3D packaging technologies represented by POP stack package are generated, and in the 3D packaging process, the technological process needs to undergo multiple thermal processes, and the conventional solder balls cannot maintain a stable structure due to self-melting in the multiple thermal processes, so that copper balls are used as cores, and solder layers are plated outside to replace the conventional BGA solder balls, so as to ensure the stability of the electronic product structure and the welding reliability in the thermal process.
At present, the common tin-based solder alloys can be divided into tin-lead solder alloys and tin-based lead-free solder alloys, and the tin-lead solder alloys are widely used in the field of microelectronic interconnection due to good use performance, but lead metal is toxic and not friendly to the environment, so that the use of lead elements in the solder alloys must be limited to meet the requirements of environmental protection.
The lead-free solder needs to meet the requirements of good wettability and low melting point, and meanwhile, needs to be matched with miniaturized packaging trend to meet the requirements of multifunction and portability, and tin-silver-copper ternary solder alloy is widely used at present in the substitutes of low-melting-point tin-lead eutectic solder; in terms of solder joint reliability, the closest to the tin-lead solder system is a tin-silver-copper eutectic solder alloy; the current commercial tin-silver-copper solder is generally Sn-3Ag-0.5Cu.
The deposition potentials of Ag + and Cu 2+ are +0.7991V and +0.340V respectively, which are far higher than Sn 2+ (-0.1375V), making the co-deposition of Sn-Ag-Cu alloy difficult; meanwhile, the ternary alloy plating solution has complex components, reactions possibly exist among different ions, for example, silver ions can react with stannous ions to generate 4-valent tin ions and silver, the electrodeposition behavior of tin-silver-copper alloy is difficult to control, the current electrodeposition process of tin-silver-copper solder is also on the centimeter scale, the copper core ball scale is generally 0.1-0.5mm, the electroplating effect is often not ideal, the problems of uneven plating and more organic matters are involved exist, and the reliability of welding spots is affected.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide the copper nuclear ball solder layer electroplating solution, the preparation method and the electroplating process method thereof, wherein the electroplating solution has uniform components, flat coating surface, less organic matter inclusion and good weldability; the plating solution is stable, green and environment-friendly, and has no wastewater treatment problem.
The technical scheme adopted by the invention is as follows:
a copper nuclear ball solder layer electroplating solution comprises 0.2-4mol/L of methylsulfonic acid, 0.1-0.5mol/L of tin salt, 0.0006-0.02mol/L of silver salt, 0.0005-0.01mol/L of copper salt, 5-40ml/L of additive and 0.1-10ml/L of complexing agent.
Specifically, the tin salt is a tin methylsulfonate solution, stannous sulfate or stannous oxide solid.
Specifically, the silver salt is silver methylsulfonate or silver oxide.
Specifically, the copper salt is copper methylsulfonate solution or copper oxide solid.
Specifically, the additive is two or more of benzylidene acetone, cinnamaldehyde, styryl benzophenone, hydroquinone, naphthalene sulfonic acid, hydrazine, pyrogallol, phenol sulfonic acid, cresol sulfonic acid, a surfactant OP-21, p-1-diaminodiphenylmethane and ascorbic acid.
Specifically, the complexing agent is one or more of ammonium citrate, sodium citrate, N-hydroxyethyl ethylenediamine triacetic acid, potassium pyrophosphate, sulfamic acid, phenolsulfonic acid, thiourea, disodium ethylenediamine tetraacetate and triethanolamine.
A preparation method of copper nuclear ball solder layer electroplating solution comprises the following specific steps: adding water with the specified volume of 30-35% into an electrolytic tank, adding methanesulfonic acid, stirring, and cooling to below 30 ℃; then complexing agent, silver salt, copper salt and tin salt are added in sequence, after pure water is supplemented to a specified volume, additives are added.
The electroplating process based on copper nuclear ball solder layer electroplating liquid includes the specific steps of oil eliminating, rust eliminating, activating, nickel plating, tin plating, silver plating, copper plating, neutralizing and stoving.
Specifically, the current density in the step of plating tin, silver and copper is 0.1-1A/dm 2, the current density in the step of plating hanging is 1-10A/dm 2, the stirring speed is 0-300rpm/min, and the temperature is 20-40 ℃; the anode is made of pure tin or platinum titanium net, and the anode is a copper nuclear sphere workpiece to be electroplated; the anode area and the cathode area are more than or equal to 2:1.
Specifically, in the step of tinning silver and copper, the supplementing amount of methylsulfonic acid is detected by a titration method, and the supplementing amount of tin salt, silver salt and copper salt is detected by an AA atomic absorption spectrometer or a titration method; the additive and complexing agent are adjusted through Hall groove experiments.
By adopting the technical scheme, the invention has the following advantages:
the additive used in the invention can be selectively adsorbed in the high current density area of the cathode, and the discharge of metal complex ions is blocked at the high current density area, so that the plating layer in the high current density area grows slowly, thereby forming a smooth and fine plating layer; the additive can consume oxygen in the plating solution to delay the oxidation process of the plating solution; the complexing agent mainly acts to react with the main salt ions to generate a complex, plays a role in stabilization and reduces the deposition potential difference; the preparation method and the electroplating process method adopt higher temperature to improve the upper limit of current density, stirring to improve the flatness of the plating layer and improve the upper limit of current, thus obtaining a uniform plating layer; simple and quick, easy to operate, capable of electroplating thicker plating layers, uniform in surface, good in dispersion capability, strong in covering capability and strong in practicability.
Drawings
FIG. 1 is an electronic image of the surface of a workpiece after electroplating in accordance with example 1 of the present invention.
FIG. 2 is an electronic image of the surface of a workpiece after electroplating in accordance with example 2 of the present invention.
FIG. 3 is an electronic image of the surface of a workpiece after electroplating in accordance with example 3 of the present invention.
Detailed Description
The present invention is further explained below with reference to the drawings and examples, which are not to be construed as limiting the scope of the invention, and the purpose of the present invention is to protect all technical improvements within the scope of the invention.
Example 1
The copper core ball solder layer electroplating solution shown in the attached figure 1 comprises 0.2mol/L of methylsulfonic acid, 0.1mol/L of tin methylsulfonate, 0.0006mol/L of silver methylsulfonate, 0.0005mol/L of copper methylsulfonate, 5ml/L of additive and 0.1ml/L of complexing agent.
The preparation method of the copper core ball solder layer electroplating solution in the embodiment comprises the following specific steps:
(1) Adding 30% of water with a specified volume into an electrolytic tank, adding 0.2mol/L of methanesulfonic acid, stirring for 5min, and cooling to below 30 ℃;
(2) Adding 0.1ml/L complexing agent, and stirring for 5min;
(3) 0.0006mol/L silver methylsulfonate is added and stirred for 5min;
(4) Adding 0.0005mol/L copper methylsulfonate solution, and stirring for 5min;
(5) Adding 0.1mol/L tin methylsulfonate solution, and stirring for 5min;
(6) Supplementing water to the target volume, and stirring for 5min;
(7) Adding 5ml/L additive, and stirring for 5min;
The additive used in this example was made of 0.0001mol/L cinnamaldehyde and 0.05mmol/L styryl benzophenone; the complexing agent is prepared from 0.5mol/L thiourea, 0.7mol/L disodium ethylenediamine tetraacetate and 0.2mol/L sodium citrate.
The electroplating process method of the copper core ball solder layer electroplating solution based on the embodiment comprises the following specific steps:
Deoiling: 1 liter of oil removal liquid is prepared by using 2CO335g、Na3PO4 g of Na and the balance of water; heating to above 70deg.C for soaking and removing oil for 3min;
And (3) rust removal: soaking for 5min at normal temperature by using a hydrochloric acid solution with the concentration of 6 mol/L;
Activating: preparing an activation solution by using 0.1-0.3g/L PdCl 2 and 50ml/L HCl, and soaking a copper core ball workpiece in the activation solution for 10-30s;
nickel plating: the composition of the solution used for nickel plating is: 45g/L of nickel sulfate, 45g/L of sodium hypophosphite, 20g/L of sodium citrate and 5g/L of ammonium chloride; operating temperature: adjusting the pH to 9.5 at 85 ℃; putting the copper core ball workpiece into the solution to be plated with nickel, wherein the thickness of the copper core ball workpiece is 1-5 mu m;
tin-plating silver-copper: electroplating is carried out by using the electroplating solution prepared in the embodiment, wherein the anode is a platinum titanium net, the cathode is a copper nuclear sphere workpiece, the current density during rack plating is 2A/dm, the current density during barrel plating is 0.1A/dm, the temperature is 20 ℃, the stirring speed is 100rpm/min, and the anode area is: cathode area = 2:1;
and (3) neutralization: soaking the electroplated copper nuclear ball workpiece with 5g/L sodium carbonate solution at 50 ℃ for 2min;
And (3) drying: and (5) placing the neutralized workpiece into a drying oven at 60 ℃, and preserving for 10 minutes to dry the moisture.
Example 2
The copper core ball solder layer electroplating solution shown in the attached figure 2 comprises 2.1mol/L of methylsulfonic acid, 0.3mol/L of stannous oxide, 0.0103mol/L of silver oxide, 0.00525mol/L of copper oxide, 22.5ml/L of additive and 5.05ml/L of complexing agent.
The preparation method of the copper core ball solder layer electroplating solution in the embodiment comprises the following specific steps:
(1) Adding 35% of water in a specified volume into an electrolytic tank, adding 2.1mol/L of methanesulfonic acid, stirring for 5min, and cooling to below 30 ℃;
(2) Adding 5.05ml/L complexing agent, and stirring for 5min;
(3) Adding 0.0103mol/L silver oxide powder and stirring for 5min;
(4) Adding 0.00525mol/L copper oxide powder, and stirring for 5min;
(5) Adding 0.3mol/L stannous oxide powder, and stirring for 5min;
(6) Supplementing water to the target volume, and stirring for 5min;
(7) Adding 22.5ml/L additive, and stirring for 5min;
The additive used in this example was prepared from 0.001mol/L cinnamaldehyde, 0.001mol/L hydroquinone, and 0.001mmol/L styryl benzophenone; the complexing agent is prepared from 0.3mol/L thiourea and 0.5mol/L disodium ethylenediamine tetraacetate.
The electroplating process method of the copper core ball solder layer electroplating solution based on the embodiment comprises the following specific steps:
Deoiling: 1 liter of oil removal liquid is prepared by using 2CO335g、Na3PO4 g of Na and the balance of water; heating to above 70deg.C for soaking and removing oil for 3min;
And (3) rust removal: soaking for 5min at normal temperature by using a hydrochloric acid solution with the concentration of 6 mol/L;
Activating: preparing an activation solution by using 0.1-0.3g/L PdCl 2 and 50ml/LHCl, and soaking the copper core ball workpiece in the activation solution for 10-30s;
nickel plating: the composition of the solution used for nickel plating is: 45g/L of nickel sulfate, 45g/L of sodium hypophosphite, 20g/L of sodium citrate and 5g/L of ammonium chloride; operating temperature: adjusting the pH to 9.5 at 85 ℃; putting the copper core ball workpiece into the solution to be plated with nickel, wherein the thickness of the copper core ball workpiece is 1-5 mu m;
Tin-plating silver-copper: electroplating is carried out by using the electroplating solution prepared in the embodiment, wherein the anode is made of pure tin, the cathode is a copper nuclear sphere workpiece, the current density during rack plating is 4A/dm, the current density during barrel plating is 0.15A/dm, the temperature is 20 ℃, the stirring speed is 0rpm/min, and the anode area is: cathode area = 2.5:1;
And (3) neutralization: soaking the electroplated workpiece at 50 ℃ for 2min by using 5g/L sodium carbonate solution;
And (3) drying: and (5) placing the neutralized workpiece into a drying oven at 60 ℃, and preserving for 10 minutes to dry the moisture.
Example 3
The copper core ball solder layer electroplating solution shown in the attached figure 3 comprises 4mol/L of methylsulfonic acid, 0.5mol/L of stannous sulfate, 0.02mol/L of silver methylsulfonate, 0.01mol/L of copper methylsulfonate, 40ml/L of additive and 10ml/L of complexing agent.
The preparation method of the copper core ball solder layer electroplating solution in the embodiment comprises the following specific steps:
(1) Adding 30% water by volume into an electrolytic tank, adding 4mol/L methanesulfonic acid, stirring for 5min, and cooling to below 30 ℃;
(2) Adding 10ml/L complexing agent, and stirring for 5min;
(3) Adding 0.02mol/L silver methylsulfonate powder and stirring for 5min;
(4) Adding 0.01mol/L copper methylsulfonate solution, and stirring for 5min;
(5) Adding 0.5mol/L stannous sulfate powder, and stirring for 5min;
(6) Supplementing water to the target volume, and stirring for 5min;
(7) Adding 40ml/L additive, and stirring for 5min;
The additives used in this example were made of 20g/L para, 1-diaminodiphenylmethane, 40ml/L benzalacetone, 300ml/LOP-21, 60ml/L phenolsulfonic acid; the complexing agent is prepared from 0.3mol/L thiourea, 0.3mol/L disodium ethylenediamine tetraacetate, 0.1mol/L sodium citrate and 0.3mol/L triethanolamine.
The electroplating process method of the copper core ball solder layer electroplating solution based on the embodiment comprises the following specific steps:
Deoiling: 1 liter of oil removal liquid is prepared by using 2CO325g、Na3PO4 g of Na and the balance of water; heating to above 70deg.C for soaking and removing oil for 3min;
And (3) rust removal: soaking for 5min at normal temperature by using a hydrochloric acid solution with the concentration of 6 mol/L;
Activating: preparing an activation solution by using 0.1g/LPdCl 2 and 50ml/LHCl, and soaking the copper core ball workpiece in the activation solution for 10-30s;
nickel plating: the composition of the solution used for nickel plating is: 45g/L of nickel sulfate, 45g/L of sodium hypophosphite, 20g/L of sodium citrate and 5g/L of ammonium chloride; operating temperature: adjusting the pH to 9.5 at 85 ℃; putting the copper core ball workpiece into the solution to be plated with nickel, wherein the thickness of the copper core ball workpiece is 1-5 mu m;
tin-plating silver-copper: electroplating is carried out by using the electroplating solution prepared in the embodiment, wherein the anode is made of pure tin, the cathode is a copper nuclear sphere workpiece, the current density during rack plating is 8A/dm, the current density during barrel plating is 1A/dm, the temperature is 40 ℃, the stirring speed is 250rpm/min, and the anode area is: cathode area = 3:1;
and (3) neutralization: soaking the electroplated copper nuclear ball workpiece with 5g/L sodium carbonate solution at 50 ℃ for 2min;
And (3) drying: and (5) placing the neutralized workpiece into a drying oven at 60 ℃, and preserving for 10 minutes to dry the moisture.
In the above examples 1 to 3, the tin salt was consumed by plating in the step of tin-silver-copper plating, and if the tin concentration was too low, the plating was easily dark, the plating was too high in tin content, the plating was rough, and the tin content in the plating was increased; pure tin is used as an anode, so that tin ion consumption can be ignored, tin salt is not required to be supplemented, and copper salt, silver salt, additives and complexing agents are only required to be supplemented; using platinum titanium net as anode to supplement tin salt, copper salt, silver salt, additive and complexing agent; wherein, the supplementing amount of tin salt, copper salt and silver salt can be analyzed by an AA atomic absorption spectrometer or a titration method, and the supplementing amount of methylsulfonic acid is detected by the titration method; the additive and the complexing agent can be electroplated for 10min by a 250mL Hall groove experiment under the current of 0.5A, and the range of the bright area of the test piece is adjusted.
In the step of tin, silver and copper plating, tin salt is consumed through electroplating, the concentration of tin ions is analyzed through a titration method, and the tin ion concentration is adjusted according to the analysis result, and the specific method comprises the following steps of:
(1) Taking 5mL of electroplating solution;
(2) 100mL of water was added;
(3) 25mL of 8N sulfuric acid was added;
(4) Adding about 5 drops of a starch indicator;
(5) Titrating with 0.1N iodine titration solution to blue as an endpoint;
the tin content calculation formula is: stannous ion mass concentration (g/L) =3086×v (iodine);
The tin salt content is 0.2-0.35mol/L by directly adding tin methylsulfonate, stannous sulfate or stannous oxide solid for supplementing.
In the step of tin-silver-copper plating, silver ion concentration is analyzed by a titration method, and is adjusted according to an analysis result; the analysis method of the silver ion concentration comprises the following steps:
(1) 50.00mL of electroplating solution is separated into a 250mL conical beaker;
(2) 10mL of ferric sulfate saturated solution is added into a conical beaker;
(3) Dropping 0.001mol/L ammonium thiocyanate standard solution until the solution is vermilion;
the silver content is calculated by the following formula: silver ion mass concentration (g/L) =2.157×v (ammonium thiocyanate);
when supplementing silver salt, the silver methylsulfonate or silver oxide is dissolved in 18% methylsulfonic acid solution to prepare silver supplementing liquid, and then the silver supplementing liquid is supplemented, wherein the silver salt content is 0.001-0.005 mol/L.
In the tin-silver-copper plating step, copper salt is consumed by electroplating, copper ion concentration is analyzed by titration, and the analysis method of the copper ion concentration is adjusted according to the analysis result as follows:
(1) 50mL of electroplating solution is separated and placed in a 250mL conical flask;
(2) Adjusting the solution with ammonia water (1+1) until copper hydroxide precipitation appears;
(3) Adding 0.4g of ammonium bifluoride to dissolve the precipitate, wherein the pH value of the solution is 3-4;
(4) 4g of potassium iodide was added and immediately titrated to yellow with a standard solution of 0.001mol/L sodium thiosulfate;
(5) Adding 5mL of 1% concentration starch solution, continuously dripping to yellow, and adding solid ammonium thiocyanate, continuously dripping to yellow as an end point;
The calculation formula of the copper ion concentration is as follows: copper ion mass concentration (g/L) = 6.355 ×v (sodium thiosulfate);
The copper salt can be supplemented by directly adding copper methylsulfonate solution or dissolving copper oxide solid in 18% methylsulfonate solution, and the copper salt content is 0.001-0.003 mol/L.
In the tin-silver-copper plating step, the methylsulfonic acid is consumed by being carried out, and the content of the methylsulfonic acid is detected by a titration method, and the steps are as follows:
(1) Taking 2mL of electroplating solution;
(2) Diluting with water to 100mL;
(3) Dripping a phenolphthalein indicator, and titrating with 0.1mol/L NaOH until the solution is pink as an end point;
The acid content calculation formula is: methanesulfonic acid content (mol/L) =50×v (NaOH)
Through measurement, the SnAgCu alloy plating layer prepared by the invention comprises the following components in percentage by mass: 94-97.5% of Sn, 2-5% of Ag and 0.3-1% of Cu, meets the requirements of eutectic components, has fine and compact crystal grains, good appearance consistency of a coating, has various performances similar to SnAgCu solder with near eutectic components, and has less organic matter inclusion and good reliability of welding spots.
The invention is not described in detail in the prior art.
The embodiments selected herein for the purposes of disclosing the invention are presently considered to be suitable, but it is to be understood that the invention is intended to include all such variations and modifications as fall within the spirit and scope of the invention.
Claims (10)
1. The copper nuclear ball solder layer electroplating solution is characterized in that: comprises 0.2 to 4mol/L of methylsulfonic acid, 0.1 to 0.5mol/L of tin salt, 0.0006 to 0.02mol/L of silver salt, 0.0005 to 0.01mol/L of copper salt, 5 to 40ml/L of additive and 0.1 to 10ml/L of complexing agent.
2. The copper core ball solder layer plating solution according to claim 1, wherein: the tin salt is a tin methylsulfonate solution, stannous sulfate or stannous oxide solid.
3. The copper core ball solder layer plating solution according to claim 1, wherein: the silver salt is silver methylsulfonate or silver oxide.
4. The copper core ball solder layer plating solution according to claim 1, wherein: the copper salt is copper methylsulfonate solution or copper oxide solid.
5. The copper core ball solder layer plating solution according to claim 1, wherein: the additive is two or more of benzylidene acetone, cinnamaldehyde, styryl benzophenone, hydroquinone, naphthalene sulfonic acid, hydrazine, pyrogallol, phenol sulfonic acid, cresol sulfonic acid, surfactant OP-21, p-1-diaminodiphenyl methane and ascorbic acid.
6. The copper core ball solder layer plating solution according to claim 1, wherein: the complexing agent is one or more of ammonium citrate, sodium citrate, N-hydroxyethyl ethylenediamine triacetic acid, potassium pyrophosphate, sulfamic acid, phenolsulfonic acid, thiourea, disodium ethylenediamine tetraacetate and triethanolamine.
7. A method for preparing the copper core ball solder layer electroplating solution according to claim 1, wherein: the method comprises the following specific steps: firstly, adding 30-35% of water with a specified volume into an electrolytic tank, adding methanesulfonic acid, stirring and cooling to below 30 ℃; then complexing agent, silver salt, copper salt and tin salt are added in sequence, after pure water is supplemented to a specified volume, additives are added.
8. An electroplating process method based on the copper nuclear ball solder layer electroplating solution as claimed in claim 7, which is characterized in that: the specific process comprises degreasing, rust removal, activation, nickel plating, tin-silver-copper plating, neutralization and drying.
9. The method for electroplating process of the copper core ball solder layer electroplating solution according to claim 8, wherein the method comprises the following steps: the current density in the step of plating tin, silver and copper is 1-10A/dm 2, the current density in the step of barrel plating is 0.1-1A/dm 2, the stirring speed is 0-300rpm/min, and the temperature is 20-40 ℃; the anode is made of pure tin or platinum titanium net, and the anode is a copper nuclear sphere workpiece to be electroplated; the anode area and the cathode area are more than or equal to 2:1.
10. The method for electroplating process of the copper core ball solder layer electroplating solution according to claim 8, wherein the method comprises the following steps: in the step of tinning silver and copper, the supplementing amount of methylsulfonic acid is detected by a titration method, and the supplementing amount of tin salt, silver salt and copper salt is detected by an AA atomic absorption spectrometer or a titration method; the additive and complexing agent are adjusted through Hall groove experiments.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004183091A (en) * | 2002-07-25 | 2004-07-02 | Shinriyou Denshi Kk | Plating solution containing, tin-silver-copper electrolytic plating method, plating film containing tin-silver-copper and soldering method using this plating film |
| CN1662679A (en) * | 2002-07-25 | 2005-08-31 | 新菱电子株式会社 | Tin-silver-copper plating solution, plating film containing the same, and method for forming the plating film |
| JP2006144073A (en) * | 2004-11-19 | 2006-06-08 | Ishihara Chem Co Ltd | Lead-free tin-silver based alloy or tin-copper based alloy electroplating bath |
| CN102162113A (en) * | 2011-05-30 | 2011-08-24 | 长春工业大学 | Tin-silver-copper ternary alloy electroplating solution and electroplating method |
| CN109136887A (en) * | 2018-10-10 | 2019-01-04 | 深圳市互连微电子材料有限公司 | A kind of copper surface chemical nickel plating ionic palladium activating solution and preparation method |
| KR20210037046A (en) * | 2019-09-26 | 2021-04-06 | 주식회사 에이피씨티 | SnAgCu electroplating solution for solder bump and solder bump manufactured by the same |
| CN112981478A (en) * | 2021-02-07 | 2021-06-18 | 电子科技大学 | Tin-silver-copper ternary weldable alloy electroplating solution and electroplating method |
| CN117822072A (en) * | 2023-12-22 | 2024-04-05 | 大连理工大学 | Tin-silver-copper alloy electroplating solution and electroplating method for wafer-level bump interconnection |
-
2024
- 2024-05-31 CN CN202410693284.0A patent/CN118272883A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004183091A (en) * | 2002-07-25 | 2004-07-02 | Shinriyou Denshi Kk | Plating solution containing, tin-silver-copper electrolytic plating method, plating film containing tin-silver-copper and soldering method using this plating film |
| CN1662679A (en) * | 2002-07-25 | 2005-08-31 | 新菱电子株式会社 | Tin-silver-copper plating solution, plating film containing the same, and method for forming the plating film |
| JP2006144073A (en) * | 2004-11-19 | 2006-06-08 | Ishihara Chem Co Ltd | Lead-free tin-silver based alloy or tin-copper based alloy electroplating bath |
| CN102162113A (en) * | 2011-05-30 | 2011-08-24 | 长春工业大学 | Tin-silver-copper ternary alloy electroplating solution and electroplating method |
| CN109136887A (en) * | 2018-10-10 | 2019-01-04 | 深圳市互连微电子材料有限公司 | A kind of copper surface chemical nickel plating ionic palladium activating solution and preparation method |
| KR20210037046A (en) * | 2019-09-26 | 2021-04-06 | 주식회사 에이피씨티 | SnAgCu electroplating solution for solder bump and solder bump manufactured by the same |
| CN112981478A (en) * | 2021-02-07 | 2021-06-18 | 电子科技大学 | Tin-silver-copper ternary weldable alloy electroplating solution and electroplating method |
| CN117822072A (en) * | 2023-12-22 | 2024-04-05 | 大连理工大学 | Tin-silver-copper alloy electroplating solution and electroplating method for wafer-level bump interconnection |
Non-Patent Citations (4)
| Title |
|---|
| 刘桂媛: "电沉积 Sn-Ag-Cu 合金工艺及沉积机理研究", 《中国优秀硕士学位论文全文数据库 工程科技I辑》, no. 2, 15 February 2009 (2009-02-15), pages 13 - 16 * |
| 张允诚 等: "《电镀手册》", vol. 4, 31 December 2021, 国防工业出版社, pages: 263 - 264 * |
| 徐盘明 等: "《实用金属材料分析方法》", vol. 2, 31 May 2015, pages: 239 - 240 * |
| 李宽亮 等: "《理化分析指南 金属材料部分 有色金属合金分析分册》", vol. 1, 31 December 1993, 兵器工业出版社, pages: 808 * |
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