CN118263083A - Wafer deposition apparatus and wafer de-electrification method using the same - Google Patents
Wafer deposition apparatus and wafer de-electrification method using the same Download PDFInfo
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- CN118263083A CN118263083A CN202311575502.2A CN202311575502A CN118263083A CN 118263083 A CN118263083 A CN 118263083A CN 202311575502 A CN202311575502 A CN 202311575502A CN 118263083 A CN118263083 A CN 118263083A
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- 238000000034 method Methods 0.000 title claims abstract description 164
- 230000008021 deposition Effects 0.000 title claims abstract description 115
- 230000008569 process Effects 0.000 claims abstract description 135
- 239000007789 gas Substances 0.000 claims abstract description 101
- 239000011261 inert gas Substances 0.000 claims abstract description 58
- 239000002245 particle Substances 0.000 claims abstract description 35
- 238000000151 deposition Methods 0.000 claims description 114
- 238000006386 neutralization reaction Methods 0.000 claims description 33
- 238000010926 purge Methods 0.000 claims description 17
- 238000005086 pumping Methods 0.000 claims description 14
- 239000012495 reaction gas Substances 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 9
- 230000005611 electricity Effects 0.000 claims description 6
- 238000000427 thin-film deposition Methods 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 4
- 230000003472 neutralizing effect Effects 0.000 claims description 4
- 230000000630 rising effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 195
- 238000005137 deposition process Methods 0.000 description 9
- 230000003028 elevating effect Effects 0.000 description 6
- 230000001174 ascending effect Effects 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000009172 bursting Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05F—STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
- H05F3/00—Carrying-off electrostatic charges
- H05F3/04—Carrying-off electrostatic charges by means of spark gaps or other discharge devices
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
Abstract
The invention relates to a wafer deposition device and a wafer de-electrification method using the same, comprising the following steps: a remote plasma device connected to a shower head of a process chamber through a pipe, and generating plasma having a lower intensity than the deposition plasma outside the process chamber, and supplying the generated plasma gas inside the process chamber; an inert gas supply source connected to the remote plasma device through a pipeline, for supplying inert gas to the remote plasma device; and a control unit for controlling the operation of the remote plasma device. Therefore, the wafer is safely powered off without damage, and generation of particles at the time of power off can be prevented.
Description
Technical Field
The present invention relates to a wafer deposition apparatus and a wafer neutralization method using the same, and more particularly, to a wafer deposition apparatus and a wafer neutralization method using the same, which can safely charge a charged wafer during a deposition process.
Background
In the semiconductor manufacturing process, the deposition process is a process of forming a thin film (a thin film of 1 μm or less) on a wafer on which an etching process is completed. Deposition of thin films may be performed by various physical vapor deposition methods (PVD) or chemical vapor deposition methods (CVD), but plasma chemical vapor deposition (PECVD) is most used, which has advantages in that a low temperature process can be realized by using plasma, uniformity of thickness can be adjusted, and mass-processing can be performed. Hereinafter, the deposition process related to the present invention refers to a deposition process using a PECVD process.
Referring to fig. 1, a wafer deposition apparatus according to the related art includes: a process chamber 1 for performing a deposition process; a vacuum pump 2 for forming a vacuum in the process chamber 1; a gas supply source 3 for supplying an inert gas and a reaction gas; an RF power supply section 4 for forming plasma; and a control unit 5 for controlling the operations of these.
The wafer deposition apparatus according to the related art supplies a gas into the process chamber 1 through a showerhead 6 provided at an upper portion of the process chamber 1, and then applies an RF power (radio frequency power) to the RF power applying part 4 to form plasma, thereby promoting chemical reaction, and reactive gas elements are actively bonded to a surface of the wafer W to deposit a formed film.
The unexplained reference numeral 7 denotes a heater for supporting the wafer W, and the unexplained reference numeral 8 denotes a lifting device for moving the heater 7 in the up-down direction. The heater 7 includes an electrostatic chuck (ESC) for stably fixing the wafer W.
On the other hand, in the wafer deposition apparatus according to the related art, a large amount of electrons and ions are generated by the plasma formed in the PECVD deposition process, and the wafer W has a self-bias of a negative potential due to the large mobility of electrons, and a phenomenon in which the wafer W is charged at a negative potential occurs.
Therefore, in the wafer deposition apparatus according to the related art, there is a problem in that, according to a relative potential difference between the charged wafer W and the electrostatic chuck, a phenomenon such as sliding, bursting, or the like occurs in the wafer W, and the wafer W is damaged, particularly, when the wafer W is separated from the electrostatic chuck after the deposition process is finished, the wafer W is not easily separated due to attraction force, and thus a phenomenon in which the wafer W is broken occurs in serious cases.
In addition, in the wafer deposition apparatus according to the related art, since the charged wafer W is easily attached to particles generated in a deposition process and is not easily detached, it is a cause of defects of the wafer W.
Therefore, in the wafer deposition apparatus according to the related art, in order to separate the wafer W and prevent particles from adhering without damage after a deposition process, a neutralization step of neutralizing the charged state of the wafer W is required.
Accordingly, in the wafer deposition apparatus according to the related art, in order to remove electricity from the wafer W, the RF power supply section 4 is operated to form plasma inside the process chamber 1 for a predetermined time, and thus the removal of electricity can be performed by positive charge components of the plasma.
However, since the plasma formed by the RF power supply section 4 is formed for deposition, the intensity is too high, and thus, the film quality of the wafer W film may be changed and damaged, and the wall surface of the process chamber 1 is etched, thereby causing a problem of generating a large amount of particles.
The prior art, which is technical information that the inventors have all or learned during the derivation of the present invention, is not necessarily known to the general public before the present invention is applied.
(Prior art literature)
(Patent literature)
(Patent document 1) Korean patent laid-open publication No. 10-0384789 (2003.05.09. Grant)
Disclosure of Invention
Problems to be solved
In view of solving the above-described problems, an object of the present invention is to provide a wafer deposition apparatus and a wafer neutralization method using the same, which can safely remove electricity from a wafer without damage and can prevent particles from being generated at the time of neutralization.
The problems to be solved by the present invention are not limited to the above-mentioned problems, and those having ordinary skill in the art to which the present invention pertains will be clearly understood from the following description.
Means for solving the problems
The wafer deposition apparatus according to the present invention includes: a process chamber for performing thin film deposition with respect to a wafer; a vacuum pump provided at an exhaust line connected to the process chamber to form a vacuum pressure in the process chamber; the gas supply source is connected with the shower head of the process chamber through a gas supply pipeline; an RF power supply unit that is connected to the showerhead of the process chamber to apply an RF power and generate a deposition plasma; a remote plasma device connected to the shower head of the process chamber through a pipe, and generating plasma having a lower intensity than the deposition plasma outside the process chamber, and supplying the generated plasma gas inside the process chamber; an inert gas supply source connected to the remote plasma device through a pipeline, for supplying inert gas to the remote plasma device; and a control unit that controls operations of the vacuum pump, the RF power supply unit, and the remote plasma device.
In this case, the wafer deposition apparatus according to the present invention may be provided with a first control valve in a line connecting the remote plasma device and the inert gas supply source, and a second control valve in a line connecting the remote plasma device and the showerhead of the process chamber.
At this time, the control part opens the first control valve before the deposition of the wafer, supplies the inert gas of the inert gas supply source to the remote plasma device, operates the remote plasma device to generate plasma, and then opens the second control valve to supply the generated plasma gas into the process chamber through the pipeline and the shower head, and then sweeps and cleans particles attached to the wafer through the plasma gas.
The control unit is configured to supply the inert gas of the inert gas supply source to the remote plasma device after the deposition of the wafer, to operate the remote plasma device to generate plasma, and to supply the generated plasma gas to the inside of the process chamber through the pipe and the shower head by opening the second control valve, and to neutralize the wafer charged in a negative potential state by the deposition plasma by positive charge components of the plasma gas to charge the wafer.
On the other hand, the wafer neutralization method using the wafer deposition apparatus according to the embodiment of the present invention includes: a wafer loading step, wherein a mechanical arm of a conveying chamber places a wafer on a heater of a process chamber; a first pumping step, performed after the wafer loading step, in which a control part operates a vacuum pump to forcibly discharge gas inside the process chamber through an exhaust line, thereby forming a vacuum pressure in the process chamber for performing thin film deposition of the wafer; a heater raising step, performed after the first pumping step, in which the control part operates a lifting device to raise the heater to a process position, thereby raising the wafer to a deposition implementation position of the shower head close to the process chamber; a gas supply step, performed after the heater raising step, of opening a control valve provided in a gas supply line by the control unit, and supplying an inert gas and a reaction gas into the process chamber through the shower head; a deposition step, performed after the gas supply step, of operating the RF power supply section to generate a deposition plasma by which a reactive gas element is deposited on the wafer surface to form a thin film; and a remote plasma discharging step, which is performed after the depositing step, wherein the control part opens a first control valve provided between an inert gas supply source and a remote plasma device, supplies inert gas of the inert gas supply source to the remote plasma device, operates the remote plasma device to generate plasma, and then opens a second control valve provided between the remote plasma device and the shower head to supply the generated plasma gas to the inside of the process chamber through a pipe and the shower head, thereby neutralizing the wafer charged in a negative potential state due to the deposition plasma of the depositing step by a positive charge component of the plasma gas to discharge the wafer.
In this case, the wafer neutralization method using the wafer deposition apparatus according to an embodiment of the present invention may further include: a heater lowering step, which is performed after the remote plasma removing step, wherein the control part operates the lifting device to lower the heater to a original position, and then lower the wafer to a position capable of being carried out; a second pumping step, performed after the heater descending step, in which the control part operates the vacuum pump to externally discharge the residual gas and particles of the process chamber; and a wafer unloading step, which is performed after the second pumping step, wherein the mechanical arm enters the inside of the process chamber, adsorbs the wafer at the upper part of the heater, and then conveys the wafer out to the conveying chamber.
In addition, the wafer neutralization method using the wafer deposition apparatus according to the embodiment of the present invention may further include a remote plasma purging step performed between the heater ascending step and the gas supplying step, the control part opening the first control valve, supplying the inert gas of the inert gas supply source to the remote plasma device, operating the remote plasma device to generate plasma, and then opening the second control valve to supply the generated plasma gas to the inside of the process chamber through a pipe and the showerhead, thereby purging and removing particles attached to the wafer through the plasma gas.
ADVANTAGEOUS EFFECTS OF INVENTION
As described above, the wafer deposition apparatus and the wafer neutralization method using the same according to the present invention safely charge-off the wafer without damage, and can prevent particles from being generated at the time of neutralization.
The effects of the present invention are not limited to the effects mentioned above, and for other effects not mentioned, those having ordinary skill in the art to which the present invention pertains can be clearly understood from the following description.
Drawings
Fig. 1 is a block diagram of a wafer deposition apparatus according to the related art.
Fig. 2 is a block diagram of a wafer deposition apparatus according to an embodiment of the present invention.
Fig. 3 is a flowchart of a wafer de-energizing method using a wafer deposition apparatus according to an embodiment of the present invention.
(Description of the reference numerals)
10: Process chamber 20: vacuum pump
21: Throttle valve 30: gas supply source
31: Control valve 40: RF power supply unit
50: Control unit 60: shower head
70: Heater 80: lifting device
100: Inert gas supply source 110: remote plasma device
120: First control valve 130: second control valve
W: wafer with a plurality of wafers
Detailed Description
In the present invention, the drawings may be exaggerated in order to distinguish, clarify, and facilitate understanding of the technology from the prior art. The terms described below are defined in consideration of functions in the present invention, and may be different depending on the intention of an operator or a user or a conventional practice, and therefore, the definition of such terms should be defined based on the technical contents throughout the present specification. On the other hand, the embodiments are merely exemplary items of the components set forth in the claims of the present invention, and do not limit the scope of the claims of the present invention, which should be interpreted based on the technical idea of the entire specification of the present invention.
Throughout the specification, when a component "comprises" a component, this means that other components may be included unless specifically stated to the contrary, and not excluding other components.
In addition, when a certain element is "connected", "contacted", or "coupled" to another element, this means not only the case of "direct connection", "direct contact", or "direct coupling", but also the case of "connection with other elements interposed therebetween", "contact with other elements interposed therebetween", or "coupling with other elements interposed therebetween". In contrast, when an element is "directly connected," "directly contacting," or "directly coupled" to another element, it is to be understood that there are no other elements in between.
In addition, when directional terms such as "front", "rear", "upper", "lower", "left", "right", "one end", "the other end", "both ends", etc. are used, this is used as an example for the directional arrangement of the disclosed drawings, and therefore, no restrictive explanation is made, and when terms such as "first", "second", etc. are used, this is not to be interpreted as a restrictive explanation as terms for distinguishing respective structures.
In order to more clearly describe the features of the embodiments of the present invention, detailed descriptions will be omitted for matters well known to those having ordinary skill in the art to which the following embodiments belong. Then, detailed description will be omitted for portions in the drawings which are irrelevant to the description of the embodiments.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 2 is a block diagram of a wafer deposition apparatus according to an embodiment of the present invention; fig. 3 is a flowchart of a wafer de-energizing method using a wafer deposition apparatus according to an embodiment of the present invention.
Referring to fig. 2, a wafer deposition apparatus according to an embodiment of the present invention includes: a process chamber 10, a vacuum pump 20, a gas supply 30, an RF power application 40, an inert gas supply 100, a remote plasma device 110, and a control 50.
The process chamber 10 is a space for performing thin film deposition on the wafer W. More specifically, the process chamber 10, although schematically shown, includes a chamber body and a chamber lid that are coupled to each other to form a closed space with respect to the outside when the chamber lid is closed. The deposition of the wafer W is performed in an enclosed space inside the process chamber 10.
A shower head 60 is provided at the chamber cover of the process chamber 10. The showerhead 60 is a substantially disk-shaped member having a plurality of through holes formed therein, and uniformly distributes the gas supplied into the process chamber 10 over the entire upper surface of the wafer W.
In addition, a heater 70 for supporting and heating the wafer W is provided in the chamber body of the process chamber 10, and the heater 70 is movable up and down by a lifting device 80.
In addition, although not shown, an electrostatic chuck (ESC) for fixing the wafer W with electrostatic force is included in the heater 70.
The vacuum pump 20 is provided in an exhaust line connected to the process chamber 10 to form a vacuum pressure in the process chamber 10. More specifically, the vacuum pump 20 is provided at an exhaust line formed at a lower side of the process chamber 10 to forcibly discharge the gas inside the process chamber 10 to the outside, thereby forming a vacuum pressure suitable for forming plasma and deposition inside the process chamber 10.
A throttle valve 21 is provided in an exhaust line between the process chamber 10 and the vacuum pump 20, and the opening degree of the throttle valve 21 is adjusted, so that the magnitude of the vacuum pressure formed in the process chamber 10 can be adjusted.
The gas supply source 30 is a structure connected to the showerhead 60 of the process chamber 10 through a gas supply line. The gas supply source 30 stores a reaction gas and an inert gas for forming plasma required for deposition of the wafer W in the process chamber 10, and supplies the reaction gas and the inert gas to the process chamber 10. The gas supply source 30 is schematically shown in the drawings, but may have a reaction gas supply source and an inert gas supply source, respectively. Reference numeral 31 is a control valve 31 that switches a gas supply line to control the flow rate of gas. A plurality of the control valves 31 may also be configured to switch the gas supply lines for the reaction gas supply source and the inert gas supply source, respectively.
The RF power supply unit 40 is connected to the shower head 60 of the process chamber 10 to apply RF power to generate deposition plasma. More specifically, the RF power supply section 40 applies RF power to the showerhead 60 to form deposition plasma between the showerhead 60 and the heater 70. The chemical reaction of the reaction gas is promoted by the deposition plasma, and a thin film containing a component of the reaction gas element is actively deposited on the surface of the wafer W.
The inert gas supply source 100 is a structure connected to the remote plasma device 110 through a pipe and supplies inert gas to the remote plasma device 110. More specifically, the inert gas supply source 100 is a structure for supplying the inert gas to the remote plasma device 110 after storing the inert gas, and may be configured as the inert gas supply source of the gas supply source 30 or the remote plasma device 110 as a dedicated separate configuration. As the inert gas, argon (Ar), helium (He), nitrogen (N2) gas, or the like can be used.
The inert gas supply source 100 and the remote plasma device 110 are connected to each other through a pipe (refer to a pipe or the like), and a first control valve 120 capable of opening and closing a flow path and adjusting a flow rate is provided in the pipe. In summary, the first control valve 120 is disposed in the pipe connecting the remote plasma device 110 and the inert gas supply 100.
The remote plasma device (RPS: remote plasma system) 110 is connected to the shower head 60 of the process chamber 10 through a pipe, generates plasma having a lower intensity than the deposition plasma outside the process chamber 10, and supplies the generated plasma gas to the inside of the process chamber 10.
In more detail, the remote plasma device 110 is a device that receives an inert gas from the inert gas supply source 100 to generate plasma outside the process chamber 10 to supply the plasma gas to the process chamber 10, unlike the deposition plasma generated inside the process chamber 10 by the RF power applying part 40. At this time, the plasma gas generated at the remote plasma device 110 is supplied to the inside of the process chamber 10 by the pressure difference between the remote plasma device 110 and the process chamber 10.
The remote plasma device 110 is connected to the shower head 60 through a pipe, and a second control valve 130 capable of switching a flow path and adjusting a flow rate is provided in the pipe. In summary, the second control valve 130 is disposed in the pipe connecting the remote plasma device 110 and the shower head 60 of the process chamber 10.
In this case, the wafer deposition apparatus according to the embodiment of the present invention may be configured such that a pump or a blower is provided in a pipe line connecting the remote plasma device 110 and the process chamber 10, so that the externally generated plasma gas can be supplied to the process chamber 10 at a higher pressure and speed.
The control unit 50 is configured to control operations of the vacuum pump 20, the RF power supply unit 40, and the remote plasma device 110. More specifically, the control unit 50 is an electronic control unit or a computer that controls operations of the respective structures including the vacuum pump 20, the throttle valve 21, the control valve 31, the RF power supply unit 40, the heater 70, the elevating device 80, the first control valve 120, and the second control valve 130.
First, the control part 50 operates the vacuum pump 20, the throttle valve 21, the control valve 31, the RF power supply part 40, the heater 70, and the elevating device 80, and performs deposition on the wafer W in the process chamber 10. For implementation of such deposition, various techniques are known, and thus detailed description thereof is omitted.
In this case, the control unit 50 preferably opens the first control valve 120, supplies the inert gas of the inert gas supply source 100 to the remote plasma device 110, operates the remote plasma device 110 to generate plasma, and then opens the second control valve 130 to supply the generated plasma gas to the inside of the process chamber 10 through the pipe and the shower head 60, thereby purging and removing particles adhering to the upper surface of the wafer W by the plasma gas.
When such remote plasma purge is performed, plasma gas generated in the remote plasma device 110 is supplied to the upper surface of the wafer W through the shower head 60, and particles adhering to the surface of the wafer W are removed. At this time, since a pressure difference between the plasma gas passing through the remote plasma device 110 and the process chamber 10 acts on the surface of the wafer W at a predetermined flow rate, particles on the surface of the wafer W are purged, and thus the particles can be removed from the wafer W.
The plasma gas utilized in such a remote plasma purge process and particles inside the process chamber 10, particles purged from the wafer W, may be discharged to the outside of the process chamber 10 through an exhaust line provided with the vacuum pump 20. For reference, in order to maintain the vacuum pressure of the process chamber 10 within a proper range suitable for deposition, the vacuum pump 20 and the throttle valve 21 are controlled to operate by the control part 50 at any time.
On the other hand, the control unit 50 is preferably configured to open the first control valve 120 after the deposition of the wafer W, supply the inert gas of the inert gas supply source 100 to the remote plasma device 110, operate the remote plasma device 110 to generate plasma, then open the second control valve 130 to supply the generated plasma gas into the process chamber 10 through a pipe and the shower head 60, and further neutralize the positive charge component of the plasma gas to charge the wafer W charged in a negative potential state due to the deposition plasma to perform the neutralization of the wafer W. At this time, the control section 50 performs the same control as in the remote plasma purge.
When such remote plasma neutralization is performed, plasma gas generated in the remote plasma device 110 is supplied onto the wafer W through the shower head 60, and the wafer W charged in a negative potential state after deposition is neutralized, so that the wafer W can be charged in a neutral state. At this time, the plasma gas generated by the remote plasma device 110 contains radicals having a large amount of positive ions and positive charges, and these radicals act on the wafer W charged at a negative potential, thereby electrically neutralizing the wafer W.
Like the plasma gas supplied for remote plasma purging, the plasma gas utilized in such remote plasma neutralization is also discharged to the outside of the process chamber 10 together with particles inside the process chamber 10 through an exhaust line provided with the vacuum pump 20.
In summary, for remote plasma purging and remote plasma removal, the control portion 50 generates plasma outside the remote plasma device 110, i.e., the process chamber 10, to supply the plasma to the process chamber 10.
As described above, the wafer deposition apparatus according to the embodiment of the present invention is configured such that the remote plasma device 110 is disposed outside the process chamber 10, plasma gas having a lower intensity than the deposition plasma is generated outside the process chamber 10, the generated plasma gas is supplied inside the process chamber 10 before deposition of the wafer W and after deposition of the wafer W, respectively, and particles attached to the wafer W are removed, and the wafer W may be de-energized to be in a neutral state.
Accordingly, the wafer deposition apparatus according to the embodiment of the present invention may reduce defects occurring at the wafer W due to particles.
In addition, the wafer deposition apparatus according to the embodiment of the present invention performs neutralization of the electricity of the wafer W, and further, when the wafer W is separated from the electrostatic chuck, the phenomena of sliding, blasting, and breakage do not occur, so that the wafer W can be safely separated from the electrostatic chuck without damage.
In addition, the wafer deposition apparatus according to the embodiment of the present invention is to prevent particles from being additionally generated and prevent a phenomenon in which the film quality of the wafer W generated by deposition is changed or damaged since the intensity of plasma generated at the remote plasma device 110 is significantly lower than that of the deposition plasma generated inside the process chamber 10 for the deposition of the wafer W, and thus the inner wall surface of the process chamber 10 is not etched by the plasma.
Hereinafter, a wafer neutralization method using a wafer deposition apparatus according to an embodiment of the present invention will be described with reference to fig. 2 and 3.
The wafer charge removing method using the wafer deposition apparatus according to an embodiment of the present invention includes: a wafer loading step S10, a first pumping step S20, a heater ascending step S30, a gas supplying step S50, a deposition step S60, a remote plasma neutralization step S70, a heater descending step S80, a second pumping step S90, and a wafer unloading step S100. In this case, the wafer power removal method using the wafer deposition apparatus according to the embodiment of the present invention may further include a remote plasma purging step S40.
The wafer loading step S10 is a step in which a robot arm (not shown) that conveys a chamber (not shown) places the wafer W at the heater 70 of the process chamber 10. More specifically, the wafer loading step S10 is a step of transferring the wafer W from a load lock chamber (or another process chamber) to be placed on the heater 70 of the process chamber 10 at a robot arm (not shown) provided in a transfer chamber connected to the process chamber 10. At this time, the wafer W may be stably fixed by the electrostatic chuck disposed at the heater 70.
The first pumping step S20 is a step performed after the wafer loading step S10, and the control part 50 operates the vacuum pump 20 to forcibly discharge the gas inside the process chamber 10 through the exhaust line to form a vacuum pressure for performing the thin film deposition of the wafer W in the process chamber 10. At this time, the control unit 50 adjusts the opening degree of the throttle valve 21 provided in the exhaust line, and further can maintain the vacuum pressure within a set range.
The heater ascending step S30 is performed after the first pumping step S20, and the control unit 50 operates the elevating device 80 to ascend the heater 70 to a process position, thereby ascending the wafer W to a deposition implementation position of the shower head 60 close to the process chamber 10. The heater ascending step S30 is implemented by the control part 50 operating the elevating device 80 to move the heater 70 upward to a set value.
The gas supply step S50 is performed after the heater rising step S30, and the control unit 50 opens the control valve 31 provided in the gas supply line to supply inert gas and reactive gas into the process chamber 10 through the showerhead 60. More specifically, the gas supply step S50 is a step in which the control section 50 opens the control valve 31 to supply the inert gas required for forming plasma and the reactive gas, which are thin film components of the wafer W, stored in the gas supply source 30, into the process chamber 10. At this time, the supplied gas is uniformly dispersed and supplied to the entire area of the upper portion of the wafer W through the plurality of through holes formed in the showerhead 60.
The deposition step S60 is performed after the gas supply step S50, and the control part 50 operates the RF power supply part 40 to generate the deposition plasma, and deposits a reactive gas element on the surface of the wafer W by the deposition plasma to form a thin film. More specifically, the deposition step S60 is a step of forming a thin film by operating the RF power supply unit 40 in an inert gas and reactive gas environment supplied from the gas supply source 30 to generate the deposition plasma in a state where the heater 70 is raised to a process position and the wafer W is located at a deposition execution position, and chemically bonding an element of the reactive gas to the surface of the wafer W.
At this time, the control part 50 operates the RF power applying part 40 to generate the deposition plasma, which ionizes the reactive gas element to enhance the chemical reaction, and thus makes the deposition of the reactive gas element on the surface of the wafer W easier.
The remote plasma discharging step S70 is performed after the deposition step S60, and the control part 50 opens the first control valve 120 provided between the inert gas supply source 100 and the remote plasma device 110 to supply the inert gas of the inert gas supply source 100 to the remote plasma device 110, operates the remote plasma device 110 to generate plasma, and then opens the second control valve 130 provided between the remote plasma device 110 and the shower head 60 to supply the generated plasma gas to the inside of the process chamber 10 through a pipe and the shower head 60, thereby discharging the wafer W charged in a negative potential state by neutralization of positive charge components of the plasma gas and the deposition plasma of the deposition step S60.
For reference, in the deposition step S60, a large amount of electrons and ions are generated by the deposition plasma generated inside the process chamber 10. At this time, since the electron mobility in the plasma is large, the wafer W has a self-bias of a negative potential, and thus the wafer W is charged to a negative potential state.
Thus, the remote plasma neutralization step S70 achieves neutralization of the wafer W charged at a negative potential in the deposition step S60 by neutralization of positive charge components (having positive ions, positively charged radicals) of the plasma gas supplied from the remote plasma device 110.
As described above, the wafer neutralization method using the wafer deposition apparatus according to the embodiment of the present invention is to accomplish neutralization of the wafer W by the remote plasma neutralization step S70, and there is no occurrence of a slip or burst phenomenon due to a relative potential difference between the wafer W and the electrostatic chuck of the heater 70, so that damage of the wafer W does not occur, and after that, the wafer W is easily separated from the electrostatic chuck when the heater 70 is lowered, thus preventing breakage of the wafer W.
In addition, the wafer neutralization method using the wafer deposition apparatus according to the embodiment of the present invention is such that since the wafer W is neutralized, the electrostatic force of the wafer W is vanished, and thus particles generated at the deposition step S60 are not easily attached to the surface of the wafer W, thereby preventing defects of the wafer W caused by the attachment of particles.
The heater lowering step S80 is performed after the remote plasma neutralization step S70, and the control unit 50 operates the elevating device 80 to lower the heater 70 to a home position, and then lower the wafer W to a position where the wafer W can be carried out. In this case, more specifically, a lift pin (not shown) disposed on the heater 70 is lifted up, and the wafer W is separated from the heater 70 and is positioned at an accurate unloading position.
In the heater descending step S80, since the wafer W is in a state of being de-electrified, there is no attraction force of electrostatic force, and the wafer W is easily separated from the electrostatic chuck of the heater 70, so that damage does not occur on the wafer W.
The second pumping step S90 is performed after the heater descending step S80, and the control part 50 operates the vacuum pump 20 to discharge the residual gas and particles of the process chamber 10 to the outside. More specifically, the second pumping step S90 is to operate the control part 50 and control the vacuum pump 20 and the throttle valve 21 to discharge the residual gas existing inside the process chamber 10 to the outside of the process chamber 10. At this time, the particles inside the process chamber 10 may be discharged to the outside of the process chamber 10 through an exhaust line together with the residual gas.
The wafer unloading step S100 is a step of carrying out the wafer W, which is the upper portion of the heater 70, to the transfer chamber (not shown) after the robot arm (not shown) enters the inside of the process chamber 10 to adsorb the wafer W, which is the upper portion of the heater 90, after the second suction step S90. More specifically, the wafer unloading step S100 is a step of adsorbing the wafer W located at the upper portion of the lift pins (not shown) by the robot arm (not shown) and then transferring the wafer W to the transfer chamber (not shown).
For reference, the robot arm (not shown) then transports the wafer W elsewhere (i.e., another body) into the interior of the process chamber 10 for the next cycle of deposition. That is, the wafer loading step S10 may be re-performed after the wafer unloading step S100.
On the other hand, in the wafer neutralization method according to the present invention, the remote plasma purge step S40 may be further performed between the heater ascent step S30 and the gas supply step S50.
The remote plasma purging step S40 is performed between the heater raising step S30 and the gas supplying step S50, and the control unit 50 opens the first control valve 120 to supply the inert gas of the inert gas supply source 100 to the remote plasma device 110, operates the remote plasma device 110 to generate plasma, and then opens the second control valve 130 to supply the generated plasma gas to the inside of the process chamber 10 through the pipe and the shower head 60, thereby purging and removing particles adhering to the wafer W through the plasma gas.
At this time, in the remote plasma purging step S40, since the heater 70 is elevated to a process position by the heater elevating step S30, and thus the wafer W is located at a deposition implementation position of the showerhead 60 close to the process chamber 10, particles of the wafer W can be more easily removed by the plasma gas exhausted through the showerhead 60.
In addition, in the remote plasma purging step S40, static electricity generated in the wafer W during the previous process and the transfer of the wafer W is eliminated by the plasma gas, and thus particles can be more easily removed from the wafer W when the plasma gas is purged.
As described above, particles removed from the wafer W and particles floating inside the process chamber 10 can be discharged to the outside of the process chamber 10 through an exhaust line by the vacuum pump 20 and the throttle valve 21 which are operated at any time in order to maintain the vacuum pressure of the process chamber 10.
As described above, according to the wafer neutralization method using the wafer deposition apparatus of the embodiment of the present invention, the remote plasma device 110 is disposed outside the process chamber 10, plasma gas having a lower intensity than the deposition plasma is generated outside the process chamber 10, and the generated plasma gas is supplied to the process chamber 10 before the deposition step S60 and after the deposition step S60, respectively, so that particles adhering to the wafer W are removed, and the wafer W can be neutralized to make the wafer W in a neutral state.
Accordingly, the wafer neutralization method using the wafer deposition apparatus according to the embodiment of the present invention is to reduce occurrence of defects in the wafer W due to particles, and to safely separate the wafer W from the electrostatic chuck without damage.
In addition, in the wafer neutralization method using the wafer deposition apparatus according to the embodiment of the present invention, since the plasma intensity generated at the remote plasma device 110 is significantly lower than that of the deposition plasma generated inside the process chamber 10 for the deposition of the wafer W, the inner wall surface of the process chamber 10 is not etched by the plasma, thereby preventing the additional generation of particles and preventing the phenomenon that the film quality of the generated wafer W is changed or damaged due to the deposition.
As described above, the wafer deposition apparatus and the wafer neutralization method using the same according to the present invention safely charge-off the wafer without damage, and can prevent particles from being generated at the time of neutralization.
As described above, the present invention is described with reference to the embodiments shown in the drawings, but it should be understood that this is merely exemplary, and various modifications and equivalent other embodiments can be implemented based on general knowledge in the art to which the present technology pertains. Accordingly, the true technical scope of the present invention should be defined by the claims set forth above and the specific contents based on the above-described invention.
Industrial applicability
The present invention relates to a wafer deposition apparatus and a wafer removal method using the same, and is applicable not only to a wafer deposition apparatus but also to an industrial field related to a display panel substrate deposition apparatus, and further to an industrial field for performing a process using plasma such as etching of a wafer and a display panel substrate, ion implantation, and the like.
Claims (7)
1. A wafer deposition apparatus comprising:
A process chamber for performing thin film deposition with respect to a wafer;
a vacuum pump provided at an exhaust line connected to the process chamber to form a vacuum pressure in the process chamber;
The gas supply source is connected with the shower head of the process chamber through a gas supply pipeline;
An RF power supply unit that is connected to the showerhead of the process chamber to apply an RF power and generate a deposition plasma;
a remote plasma device connected to the shower head of the process chamber through a pipe, and generating plasma having a lower intensity than the deposition plasma outside the process chamber, and supplying the generated plasma gas inside the process chamber;
an inert gas supply source connected to the remote plasma device through a pipeline, for supplying inert gas to the remote plasma device; and
And a control part for controlling the operation of the vacuum pump, the RF power supply applying part and the remote plasma device.
2. The wafer deposition apparatus as claimed in claim 1, wherein,
A first control valve is arranged on a pipeline connecting the remote plasma device and the inert gas supply source, and a second control valve is arranged on a pipeline connecting the remote plasma device and the shower head of the process chamber.
3. The wafer deposition apparatus of claim 2, wherein,
The control part is to open the first control valve before the wafer is deposited, supply inert gas of the inert gas supply source to the remote plasma device, operate the remote plasma device to generate plasma, then open the second control valve to supply the generated plasma gas into the process chamber through a pipeline and the shower head, and further purge and remove particles attached to the wafer through the plasma gas.
4. The wafer deposition apparatus of claim 2, wherein,
The control part is to open the first control valve after the wafer is deposited, supply inert gas of the inert gas supply source to the remote plasma device, operate the remote plasma device to generate plasma, then open the second control valve to supply the generated plasma gas into the process chamber through a pipeline and the shower head, and further neutralize the wafer charged in a negative potential state due to the deposition plasma through positive charge components of the plasma gas so as to remove the electricity from the wafer.
5. A wafer de-electrification method using a wafer deposition apparatus, comprising:
a wafer loading step, wherein a mechanical arm of a conveying chamber places a wafer on a heater of a process chamber;
A first pumping step, performed after the wafer loading step, in which a control part operates a vacuum pump to forcibly discharge gas inside the process chamber through an exhaust line, thereby forming a vacuum pressure in the process chamber for performing thin film deposition of the wafer;
A heater raising step, performed after the first pumping step, in which the control part operates a lifting device to raise the heater to a process position, thereby raising the wafer to a deposition implementation position of the shower head close to the process chamber;
A gas supply step, performed after the heater raising step, of opening a control valve provided in a gas supply line by the control unit, and supplying an inert gas and a reaction gas into the process chamber through the shower head;
A deposition step, performed after the gas supply step, of operating the RF power supply section to generate a deposition plasma by which a reactive gas element is deposited on the wafer surface to form a thin film; and
And a remote plasma discharging step, which is performed after the deposition step, wherein the control part opens a first control valve provided between an inert gas supply source and a remote plasma device, supplies inert gas of the inert gas supply source to the remote plasma device, operates the remote plasma device to generate plasma, and then opens a second control valve provided between the remote plasma device and the shower head to supply the generated plasma gas into the interior of the process chamber through a pipeline and the shower head, thereby neutralizing the wafer charged in a negative potential state due to the deposition plasma of the deposition step by positive charge components of the plasma gas, so as to discharge the wafer.
6. The wafer neutralization method using a wafer deposition apparatus as recited in claim 5, further comprising:
A heater lowering step, which is performed after the remote plasma removing step, wherein the control part operates the lifting device to lower the heater to a original position, and then lower the wafer to a position capable of being carried out;
a second pumping step, performed after the heater descending step, in which the control part operates the vacuum pump to externally discharge the residual gas and particles of the process chamber; and
And a wafer unloading step, which is performed after the second pumping step, wherein the mechanical arm enters the inside of the process chamber, adsorbs the wafer at the upper part of the heater, and then conveys the wafer out to the conveying chamber.
7. The wafer neutralization method using a wafer deposition apparatus as recited in claim 5, further comprising:
And a remote plasma purging step, which is performed between the heater rising step and the gas supply step, wherein the control part opens the first control valve, supplies inert gas of the inert gas supply source to the remote plasma device, operates the remote plasma device to generate plasma, and then opens the second control valve to supply the generated plasma gas into the process chamber through a pipeline and the shower head, so as to purge and remove particles attached to the wafer through the plasma gas.
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| Application Number | Priority Date | Filing Date | Title |
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| KR10-2022-0187481 | 2022-12-28 | ||
| KR1020220187481A KR20240104846A (en) | 2022-12-28 | 2022-12-28 | Wafer deposition equipment and method for discharging wafer using the same |
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| CN118263083A true CN118263083A (en) | 2024-06-28 |
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| KR (1) | KR20240104846A (en) |
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|---|---|---|---|---|
| KR100384789B1 (en) | 2000-10-16 | 2003-05-22 | 주식회사 하이닉스반도체 | A Plasma Etching apparatus for fabricating semiconductor |
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