CN118175907A - Preparation method of perovskite light absorption layer, solar cell and preparation method of solar cell - Google Patents
Preparation method of perovskite light absorption layer, solar cell and preparation method of solar cell Download PDFInfo
- Publication number
- CN118175907A CN118175907A CN202410328579.8A CN202410328579A CN118175907A CN 118175907 A CN118175907 A CN 118175907A CN 202410328579 A CN202410328579 A CN 202410328579A CN 118175907 A CN118175907 A CN 118175907A
- Authority
- CN
- China
- Prior art keywords
- layer
- type perovskite
- evaporation
- perovskite layer
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 34
- 230000031700 light absorption Effects 0.000 title claims abstract description 24
- 238000001704 evaporation Methods 0.000 claims abstract description 105
- 230000008020 evaporation Effects 0.000 claims abstract description 104
- 238000000034 method Methods 0.000 claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 230000008569 process Effects 0.000 claims abstract description 42
- 150000003839 salts Chemical class 0.000 claims abstract description 40
- 229910017053 inorganic salt Inorganic materials 0.000 claims abstract description 32
- 238000000151 deposition Methods 0.000 claims description 28
- 230000005525 hole transport Effects 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000007740 vapor deposition Methods 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 229910052792 caesium Inorganic materials 0.000 claims description 3
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 238000005019 vapor deposition process Methods 0.000 claims description 2
- 238000005215 recombination Methods 0.000 abstract description 9
- 230000006798 recombination Effects 0.000 abstract description 9
- 238000005137 deposition process Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 206
- 239000010408 film Substances 0.000 description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- -1 but not limited to Chemical class 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 230000001276 controlling effect Effects 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910021426 porous silicon Inorganic materials 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- 229910021595 Copper(I) iodide Inorganic materials 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229920001167 Poly(triaryl amine) Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910003472 fullerene Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000009776 industrial production Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- QPBYLOWPSRZOFX-UHFFFAOYSA-J tin(iv) iodide Chemical compound I[Sn](I)(I)I QPBYLOWPSRZOFX-UHFFFAOYSA-J 0.000 description 2
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- XIOYECJFQJFYLM-UHFFFAOYSA-N 2-(3,6-dimethoxycarbazol-9-yl)ethylphosphonic acid Chemical compound COC=1C=CC=2N(C3=CC=C(C=C3C=2C=1)OC)CCP(O)(O)=O XIOYECJFQJFYLM-UHFFFAOYSA-N 0.000 description 1
- KIMPAVBWSFLENS-UHFFFAOYSA-N 2-carbazol-9-ylethylphosphonic acid Chemical compound C1=CC=CC=2C3=CC=CC=C3N(C1=2)CCP(O)(O)=O KIMPAVBWSFLENS-UHFFFAOYSA-N 0.000 description 1
- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 description 1
- SNFCXVRWFNAHQX-UHFFFAOYSA-N 9,9'-spirobi[fluorene] Chemical compound C12=CC=CC=C2C2=CC=CC=C2C21C1=CC=CC=C1C1=CC=CC=C21 SNFCXVRWFNAHQX-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- 101710134784 Agnoprotein Proteins 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical compound [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JKSIBASBWOCEBD-UHFFFAOYSA-N N,N-bis(4-methoxyphenyl)-9,9'-spirobi[fluorene]-1-amine Chemical compound COc1ccc(cc1)N(c1ccc(OC)cc1)c1cccc2-c3ccccc3C3(c4ccccc4-c4ccccc34)c12 JKSIBASBWOCEBD-UHFFFAOYSA-N 0.000 description 1
- CHJJGSNFBQVOTG-UHFFFAOYSA-N N-methyl-guanidine Natural products CNC(N)=N CHJJGSNFBQVOTG-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- NPYPAHLBTDXSSS-UHFFFAOYSA-N Potassium ion Chemical compound [K+] NPYPAHLBTDXSSS-UHFFFAOYSA-N 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 description 1
- 229910021623 Tin(IV) bromide Inorganic materials 0.000 description 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 1
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 1
- HUOSXUVFHUFNTL-UHFFFAOYSA-N [S-2].[S-2].[Mn+4] Chemical compound [S-2].[S-2].[Mn+4] HUOSXUVFHUFNTL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- ZRALSGWEFCBTJO-UHFFFAOYSA-N anhydrous guanidine Natural products NC(N)=N ZRALSGWEFCBTJO-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- KOPBYBDAPCDYFK-UHFFFAOYSA-N caesium oxide Chemical compound [O-2].[Cs+].[Cs+] KOPBYBDAPCDYFK-UHFFFAOYSA-N 0.000 description 1
- 229910001942 caesium oxide Inorganic materials 0.000 description 1
- NCMHKCKGHRPLCM-UHFFFAOYSA-N caesium(1+) Chemical compound [Cs+] NCMHKCKGHRPLCM-UHFFFAOYSA-N 0.000 description 1
- 229910001424 calcium ion Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- UPGUYPUREGXCCQ-UHFFFAOYSA-N cerium(3+) indium(3+) oxygen(2-) Chemical compound [O--].[O--].[O--].[In+3].[Ce+3] UPGUYPUREGXCCQ-UHFFFAOYSA-N 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 description 1
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 1
- SWSQBOPZIKWTGO-UHFFFAOYSA-N dimethylaminoamidine Natural products CN(C)C(N)=N SWSQBOPZIKWTGO-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- CKHJYUSOUQDYEN-UHFFFAOYSA-N gallium(3+) Chemical compound [Ga+3] CKHJYUSOUQDYEN-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-N hydrogen thiocyanate Natural products SC#N ZMZDMBWJUHKJPS-UHFFFAOYSA-N 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical compound [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- BAVYZALUXZFZLV-UHFFFAOYSA-N mono-methylamine Natural products NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 229910001414 potassium ion Inorganic materials 0.000 description 1
- 229910001419 rubidium ion Inorganic materials 0.000 description 1
- 229940071182 stannate Drugs 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- LTSUHJWLSNQKIP-UHFFFAOYSA-J tin(iv) bromide Chemical compound Br[Sn](Br)(Br)Br LTSUHJWLSNQKIP-UHFFFAOYSA-J 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a preparation method of a perovskite light absorption layer, a solar cell and a preparation method of the solar cell. The preparation method of the perovskite light absorption layer comprises the following steps: and adopting an evaporation process to jointly deposit organic salt and inorganic salt on the substrate, and adjusting the evaporation ratio of the organic salt and the inorganic salt by controlling the evaporation rate, so as to adjust the ratio of the organic salt and the inorganic salt deposited on the substrate, thereby forming the perovskite light absorption layer comprising the P-type perovskite layer and the N-type perovskite layer which are stacked. According to the preparation method, the P-type perovskite layer and the N-type perovskite layer are formed by adopting an evaporation process, the uniformity of the film layer can be improved, and the evaporation rate is controlled to adjust the evaporation ratio of organic salt and inorganic salt, so that the proportion of the organic salt and the inorganic salt deposited on a substrate is adjusted, the formed P-type perovskite layer and N-type perovskite layer are homogeneous PN junctions, the continuous deposition process is uniform and closely related, and the performance loss caused by interface recombination between different film layers is reduced.
Description
Technical Field
The invention relates to the field of photovoltaics, in particular to a preparation method of a perovskite light absorption layer, a solar cell and a preparation method of the solar cell.
Background
Perovskite solar cells are used as third generation photovoltaic cells, the theoretical photoelectric conversion efficiency is up to 31%, and the current photoelectric conversion efficiency can reach about 26%. Most of the most efficient perovskite batteries at present are prepared on small-area glass by adopting a one-step solution spin coating method, so that large-area uniform preparation cannot be realized, and the industrialization process is hindered. The Walsh adopts a spin coating method to prepare a P-type perovskite film and an N-type perovskite film respectively, and the battery efficiency reaches 21 percent. However, the solution method is adopted to prepare the P-type perovskite thin film and the N-type perovskite thin film respectively, so that the problems of serious interface recombination and poor large-area preparation uniformity exist, and the performances such as battery efficiency and the like are affected.
Disclosure of Invention
Based on the above, it is necessary to provide a method for preparing a perovskite light absorption layer, a solar cell and a method for preparing the same, so as to solve the problems of serious interfacial recombination between a P-type perovskite film and an N-type perovskite film and poor large-area preparation uniformity.
The first aspect of the invention provides a preparation method of a perovskite light absorption layer, which comprises the following steps:
a method for preparing a perovskite light absorbing layer, comprising the steps of:
And depositing a perovskite light absorption layer on the substrate by adopting an evaporation process, wherein the evaporation source comprises organic salt and inorganic salt, and the evaporation rate of the evaporation source is controlled to adjust the evaporation ratio of the organic salt and the inorganic salt, so that the ratio of the organic salt and the inorganic salt deposited on the substrate is adjusted to form the perovskite light absorption layer comprising the P-type perovskite layer and the N-type perovskite layer which are stacked.
In one embodiment, the molecular formula of the organic salt is RX n, wherein R is at least one of formamidino and methylamino, X is at least one of Cl, br and I, and n is stoichiometric.
In one embodiment, the inorganic salt has the formula QX 'n, wherein Q is selected from at least one of Cs, pb, sn, X' is selected from at least one of Cl, br, I, and n is stoichiometric.
In one embodiment, each evaporation source is respectively arranged on different heat sources, and the heating temperatures of the different heat sources are independently controlled so as to independently control the evaporation rates of the different evaporation sources.
In one embodiment, at a first stage of the evaporation process, a first type perovskite layer is deposited at a first evaporation rate of each of the evaporation sources;
In the second stage of the evaporation process, controlling the evaporation rate of one or more evaporation sources to gradually change into respective second evaporation rates, so that the perovskite layer gradually transits from the first type perovskite layer to the second type perovskite layer;
the first type perovskite layer is a P-type perovskite layer, and the second type perovskite layer is an N-type perovskite layer; or the first type perovskite layer is an N type perovskite layer, and the second type perovskite layer is a P type perovskite layer.
In one embodiment, the first type perovskite layer is a P-type perovskite layer, the second type perovskite layer is an N-type perovskite layer, and the temperature of the substrate in the second stage is controlled to be higher than the temperature of the substrate in the first stage; or alternatively
The first type perovskite layer is an N-type perovskite layer, the second type perovskite layer is a P-type perovskite layer, and the temperature of the substrate in the second stage is controlled to be lower than that of the substrate in the first stage.
The second aspect of the invention provides a preparation method of a solar cell, which comprises the following steps:
A method of fabricating a solar cell, comprising the steps of:
Depositing the perovskite light absorbing layer on a substrate by the preparation method of the perovskite light absorbing layer;
An electrode layer is formed on the perovskite light absorbing layer.
In one embodiment, the method for manufacturing a solar cell further includes the steps of:
And depositing by adopting an evaporation process to form a hole transport layer, wherein the hole transport layer is positioned between the electrode layer and the P-type perovskite layer.
In one embodiment, the method for manufacturing a solar cell further includes the steps of:
and depositing an electron transport layer by adopting an evaporation process, wherein the electron transport layer is positioned between the substrate and the N-type perovskite layer.
A third aspect of the present invention provides a solar cell, which comprises:
The solar cell is prepared by the preparation method of the solar cell.
Compared with the traditional scheme, the preparation method of the perovskite light absorption layer, the solar cell and the preparation method thereof have the following beneficial effects:
compared with a solution method, the preparation method of the perovskite light absorption layer adopts an evaporation process to form the P-type perovskite layer and the N-type perovskite layer, can improve the uniformity of the film layer, adjusts the evaporation ratio of organic salt and inorganic salt by controlling the evaporation rate, thereby adjusting the ratio of the organic salt and the inorganic salt deposited on a substrate, the formed P-type perovskite layer and N-type perovskite layer are homogeneous PN junctions, and the built-in electric field generated by the P-type perovskite layer and the N-type perovskite layer is used for separating and extracting electrons and holes, so that an additional carrier transmission layer is not required, the continuous deposition process is uniform and closely related, the continuous deposition process can be regarded as a whole, and the performance loss caused by interface recombination between different film layers is reduced.
The preparation method of the solar cell comprises the preparation method of the perovskite light absorption layer, so that corresponding beneficial effects can be obtained.
Drawings
Fig. 1 is a schematic structural diagram of a solar cell according to an embodiment;
Fig. 2 is a schematic structural diagram of a solar cell according to another embodiment.
Detailed Description
In order that the above objects, features and advantages of the invention will be readily understood, a more particular description of the invention will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the invention, whereby the invention is not limited to the specific embodiments disclosed below.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second" may include at least one such feature, either explicitly or implicitly. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The preparation method of the perovskite light absorption layer comprises the following steps:
And depositing a perovskite light absorption layer on the substrate by adopting an evaporation process, wherein the evaporation source comprises organic salt and inorganic salt, and the evaporation rate of the evaporation source is controlled to adjust the evaporation ratio of the organic salt and the inorganic salt, so that the ratio of the organic salt and the inorganic salt deposited on the substrate is adjusted to form the perovskite light absorption layer comprising the P-type perovskite layer and the N-type perovskite layer which are stacked.
Compared with a solution method, the preparation method of the perovskite light absorption layer adopts an evaporation process to form the P-type perovskite layer and the N-type perovskite layer, can improve the uniformity of the film layer, adjusts the evaporation ratio of organic salt and inorganic salt by controlling the evaporation rate, thereby adjusting the ratio of the organic salt and the inorganic salt deposited on a substrate, the formed P-type perovskite layer and N-type perovskite layer are homogeneous PN junctions, and the built-in electric field generated by the P-type perovskite layer and the N-type perovskite layer is used for separating and extracting electrons and holes, so that an additional carrier transmission layer is not required, the continuous deposition process is uniform and closely related, the continuous deposition process can be regarded as a whole, and the performance loss caused by interface recombination between different film layers is reduced.
According to the preparation method, the evaporation rate is controlled, the evaporation ratio of the organic salt and the inorganic salt is regulated, the P-type perovskite layer and the N-type perovskite layer are continuously evaporated, the preparation period of the battery is shortened, and the industrial production is facilitated.
Wherein the molecular formula of the organic salt is RX n. In the molecular formula, R can be at least one of FA (formamidino, CH (NH 2)2 +) and MA (methylamino, CH 3NH3 +), wherein X is at least one of Cl, br and I, and n is in accordance with the stoichiometric amount.
Further, the organic salt is selected from at least one of FAI, FABr, MAI, MABr, MACl.
Wherein the molecular formula of the inorganic salt is QX' n. In the molecular formula, Q is at least one of Cs, pb and Sn, X' is at least one of Cl, br and I, and n accords with the stoichiometry.
Further, the inorganic salt is at least one selected from the group consisting of CsI and PbI 2、PbBr2、PbCl、CsBr、CsCl、SnCl4、SnI4、SnBr4.
In one example, the evaporation rate of the organic salt and the inorganic salt is controlled by controlling the temperature of the evaporation process, thereby adjusting the evaporation ratio of the organic salt and the inorganic salt. For example, P-type perovskite has a slow deposition rate of the main a-site precursor material or a fast deposition rate of the main X-site precursor material compared to N-type perovskite.
In one example, each evaporation source is respectively arranged on different heat sources, and the heating temperatures of the different heat sources are independently controlled so as to independently control the evaporation rates of the different evaporation sources.
For example, the organic salt is MAI and MACl, the inorganic salt is PbI 2, pbCl 2,MAI、MACl、PbI2 and PbCl 2, which are respectively arranged on the four heat sources, and the heating temperatures of the different heat sources are independently controlled, so that the different evaporation sources can be independently adjusted.
In one example, at a first stage of the evaporation process, a first type of perovskite layer is deposited at a respective first evaporation rate of the evaporation sources;
In the second stage of the evaporation process, controlling the evaporation rate of one or more evaporation sources to gradually change into respective second evaporation rates, so that the perovskite layer gradually transits from the first type perovskite layer to the second type perovskite layer;
The first type perovskite layer is a P-type perovskite layer, and the second type perovskite layer is an N-type perovskite layer; or the first type perovskite layer is an N-type perovskite layer, and the second type perovskite layer is a P-type perovskite layer.
The first and second stages of the evaporation process are performed continuously. The vapor deposition rate of the vapor deposition source is continuously variable. Thus, the concentration of the element at the PN junction is in gradient change, and serious phase separation of the PN junction in the subsequent film forming process is avoided.
In one example, the first type of perovskite layer is a P-type perovskite layer, the second type of perovskite layer is an N-type perovskite layer, and the temperature of the substrate in the second stage is controlled to be higher than the temperature of the substrate in the first stage. By increasing the temperature of the substrate in the second stage, the N-type degree of the N-type perovskite layer can be made better.
In one example, the first type of perovskite layer is an N-type perovskite layer, the second type of perovskite layer is a P-type perovskite layer, and the temperature of the substrate in the second stage is controlled to be lower than the temperature of the substrate in the first stage. By lowering the temperature of the substrate in the second stage, the degree of P-type of the P-type perovskite layer can be made better.
The P-type perovskite layer and the N-type perovskite layer form a homogeneous PN junction, atoms or groups of perovskite materials are consistent in composition, and the ratio of the atoms or groups is different. The molecular formula of the perovskite material is ABX 3. Wherein A is a monovalent cation including, but not limited to, at least one of cesium ion, rubidium ion, potassium ion, methylamine ion, formamidine ion, methylenediamine ion, benzamidine cation, and guanidine cation. B is a divalent cation including, but not limited to, at least one of lead ion, copper ion, zinc ion, gallium ion, tin ion, and calcium ion. X is a monovalent anion including, but not limited to, at least one of fluoride, chloride, bromide, iodide, thiocyanate, tetrafluoroborate, hexafluorophosphate, formate, and acetate.
In one example, the band gap of the P-type perovskite layer is 1.40 eV-2.3 eV.
In one example, the band gap of the N-type perovskite layer is 1.40 eV-2.3 eV.
In one example, the thickness of the P-type perovskite layer is 300 nm-600 nm.
In one example, the thickness of the N-type perovskite layer is 300 nm-600 nm.
Further, the invention also provides a preparation method of the solar cell, which comprises the following steps:
depositing a perovskite light absorbing layer on a substrate by the method of preparing a perovskite light absorbing layer of any one of the examples described above;
an electrode layer is formed on the perovskite light absorbing layer.
The preparation method adopts the evaporation process to form the P-type perovskite layer and the N-type perovskite layer, can improve the uniformity of the film layer, and adjusts the evaporation ratio of organic salt and inorganic salt by controlling the evaporation rate, so as to adjust the ratio of the organic salt and the inorganic salt deposited on a substrate, the formed P-type perovskite layer and the N-type perovskite layer are homogeneous PN junctions, the generated built-in electric field separates and extracts electrons and holes, an additional carrier transmission layer is not needed, the continuous deposition process is uniform and closely connected, the film layer can be regarded as a whole, and the performance loss caused by interface recombination between different film layers is reduced.
According to the preparation method, the evaporation rate is controlled, the evaporation ratio of the organic salt and the inorganic salt is regulated, the P-type perovskite layer and the N-type perovskite layer are continuously evaporated, the preparation period of the battery is shortened, and the industrial production is facilitated.
The solar cell may be a perovskite single-layer cell or a stacked cell.
For example, the solar cell 100 shown in fig. 1 is a perovskite single-layer cell including a substrate 110, a perovskite light absorbing layer 120, and an electrode layer 130, which are stacked. Wherein the perovskite light absorbing layer 120 includes a P-type perovskite layer 121 and an N-type perovskite layer 122.
When the solar cell is a perovskite single-layer cell, the material of the substrate 110 may be, but is not limited to, one or more of Indium Tin Oxide (ITO), aluminum doped zinc oxide (AZO), indium doped zinc oxide (IZO), fluorine doped tin oxide (FTO), indium tungsten oxide (IWO), indium Cerium Oxide (ICO), and the like.
The stacked cell is, for example, a perovskite/crystalline silicon stacked cell, a full perovskite stacked cell, a perovskite/organic stacked cell, a perovskite/CIGS stacked cell, a perovskite/CdTe stacked cell, a perovskite/GaAs stacked cell, or the like.
For example, the solar cell 200 shown in fig. 2 is a perovskite/crystalline silicon stacked cell, and includes an anti-reflection layer 270, a second transparent conductive layer 260, a buffer layer 250, a hole transport layer 240, a P-type perovskite layer 232, an N-type perovskite layer 231, an electron transport layer 220, a composite layer 219, a first doped layer 214, a first amorphous silicon layer 212, a single crystal silicon substrate 211, a second amorphous silicon layer 213, a second doped layer 216, and a transparent electrode layer 217, which are stacked in this order. The anti-reflection layer 270 is provided with a first gate line 218, and the transparent electrode layer 217 is provided with a second gate line 280. The P-type perovskite layer 232 and the N-type perovskite layer 231 constitute a perovskite light absorption layer 230.
The perovskite homogeneous PN junction prepared by the evaporation process can realize carrier transmission without additionally arranging a carrier transmission layer.
In order to further improve the hole transport effect, in one example, the method for manufacturing a solar cell further includes the steps of:
a hole transporting layer is formed between the electrode layer and the P-type perovskite layer.
Alternatively, the material of the hole transport layer may be, but is not limited to, niO x (nickel oxide), cuSCN (cuprous thiocyanate), moO x (molybdenum oxide), cuI (cuprous iodide), cuO x (copper oxide), V 2O5 (vanadium pentoxide), moS 2 (molybdenum disulfide), mnS 2 (manganese disulfide), PTAA (poly [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ]), PEDOT: PSS ((poly (3, 4-ethylenedioxythiophene): polystyrene sulfonic acid)), spira-omtad (2, 2', 7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene), spira-TTB (2, 2', 7' -tetrakis (di-P-tolylamino) Spiro-9, 9' -bifluorene), (MeO-) 2PACz ([ 2- (3, 6-dimethoxy-9H-carbazol-9-yl) ethyl ] phosphonic acid), (4- (3, 4-ethylenedioxythiophene) polystyrene sulfonic acid), spira-9, 7' -tetrakis [ N, 7' -bis (4-methoxyphenyl) amino ] -9,9' -tetra (2, 2', 7' -bis (P-tolylamino) Spiro-9, 9' -bis (MeO-) ethyl) phosphonic acid, 4- (4, 6-dimethoxy-9-methyl) P-quinone, 4 (4, 6-tetramethyl-N-methyl) amino) phosphine, 4,6 ' -tetramethyl-P-m.
In one example, the hole transport layer has a thickness of 1nm to 200nm. Further, in one example, the hole transport layer has a thickness of 10nm to 100nm. In some specific examples, the hole transport layer has a thickness of 5nm, 20nm, 40nm, 60nm, 80nm, 100nm, 120nm, 140nm, 160nm, 180nm, 200nm, etc.
Alternatively, the hole transport layer may be prepared by, but not limited to, evaporation, magnetron sputtering, atomic layer deposition, electrochemical deposition, molecular beam evaporation, dip coating, spin coating, knife coating, slit coating, bar coating, ink jet printing, and the like.
In one example, the hole transport layer is prepared using an evaporation process. Because the hole transport layer prepared by the wet method and the perovskite light absorption layer prepared by the dry method are incompatible at interfaces due to different preparation methods, additional defects are caused, and thus, the performance loss is caused. In this example, the hole transport layer is prepared by an evaporation process, so that the interface recombination between the hole transport layer and the perovskite light absorption layer can be reduced, and the loss of the battery performance can be reduced.
In order to further improve the electron transport effect, in one example, the method for manufacturing a solar cell further includes the steps of:
an electron transport layer is formed, the electron transport layer being located between the substrate and the N-type perovskite layer.
Alternatively, the material of the electron transport layer may be one or more of ZnO (zinc oxide), snO 2 (tin oxide), tiO 2 (titanium dioxide), srTiO 3 (strontium titanate), zn 2SnO4 (zinc stannate), zrO 2 (zirconium dioxide), al 2O3 (aluminum oxide), WO 3 (tungsten trioxide), ceO x (cesium oxide), cdS (cadmium sulfide), cdSe (cadmium selenide), baSnO 3 (barium stannate), nb 2O5 (niobium pentoxide), C 60 (fullerene), PCBM (fullerene derivative), but not limited thereto.
In one example, the electron transport layer has a thickness of 1nm to 30nm. Further, in one example, the electron transport layer has a thickness of 5nm to 20nm. In some specific examples, the electron transport layer has a thickness of 2nm, 5nm, 8nm, 12nm, 15nm, 18nm, 20nm, 22nm, 25nm, 27nm, 29nm, 30nm, and the like.
Alternatively, the electron transport layer may be prepared by, but not limited to, evaporation, magnetron sputtering, atomic layer deposition, electrochemical deposition, molecular beam evaporation, dip coating, spin coating, knife coating, slit coating, bar coating, ink jet printing, and the like.
In one example, the electron transport layer is prepared using an evaporation process. Because the electron transport layer prepared by the wet method and the perovskite light absorption layer prepared by the dry method are incompatible at interfaces due to different preparation methods, additional defects are caused, and thus, the performance loss is caused. In this example, the electron transport layer is prepared by an evaporation process, so that the interface recombination between the electron transport layer and the perovskite light absorption layer can be reduced, and the loss of battery performance can be reduced.
Alternatively, the material of the electrode layer may be, but is not limited to, one or more of Au, ag, cu, etc.
Further, the invention also provides a solar cell, which is prepared by the preparation method of any one of the examples.
The present invention is further described below with reference to the following specific examples, but the present invention is not limited to the following specific examples.
Example 1
As shown in fig. 1, the present embodiment provides a method for manufacturing a solar cell 100, which includes the following steps:
in step 1, ITO conductive glass is used as a substrate 110, and the sheet resistance is 1 Ω/sq and the thickness is 20nm.
In step 2, a perovskite light absorbing layer 120 is deposited on the substrate 110 using an evaporation process. The evaporation sources comprise organic salts and inorganic salts, wherein the organic salts are MAI and MACl, the inorganic salts are PbI 2 and PbCl 2, and different evaporation sources are respectively arranged on different heat sources.
In the first stage, the temperature of the substrate to be treated is controlled to be 0 ℃, and the temperature of each heat source is controlled so that the evaporation rate of MAI, MACl and PbI 2 is 1.5A/s, the evaporation rate of PbCl 2 is 0, and a P-type perovskite layer 121 is deposited on the substrate, wherein the component is MAPbI 3, and the thickness is 300nm.
In the second stage, the substrate is heated to 50deg.C and the temperature of the heat source is adjusted to maintain the evaporation rate of MAI and MACl A at 1.5A/s, the evaporation rate of PbI 2 at 1.5A/s is reduced to 0.9A/s, the evaporation rate of PbCl 2 at 0 to 0.6A/s, and an N-type perovskite layer 122 is deposited on the P-type perovskite layer 121, with a composition of MAPbI xCl1-x and a thickness of 300nm.
In step 3, silver is deposited on the N-type perovskite layer 122 by an evaporation process to form an electrode layer 130, wherein the thickness of the electrode layer is 70nm.
And 4, annealing the perovskite battery obtained in the step 3 at 100 ℃ for 15min.
Example 2
As shown in fig. 2, the embodiment provides a method for manufacturing a solar cell, which includes the following steps:
and step 1, selecting N-type monocrystalline silicon, performing RCA cleaning treatment, and preparing a porous structure on the surface of the N-type monocrystalline silicon by adopting a metal-assisted chemical etching method to obtain the porous silicon. The etching adopts a mixed solution composed of HF, agNO 3 and H 2O2, and the cleaning is carried out by HNO 3 after the etching.
And 2, immersing the porous silicon into an acid solution at the temperature of 10 ℃, wherein the acid solution comprises HF and HNO 3 in a volume ratio of 1:3. And (3) removing the surface porous silicon, placing the surface porous silicon in a NaOH solution at 70-90 ℃ for texturing to obtain a top surface pyramid structure and a bottom surface inverted pyramid structure, wherein the included angle between the top surface pyramid structure and the silicon surface is 60 degrees, the depth is 1 mu m, the included angle between the bottom surface inverted pyramid structure and the silicon surface is 25 degrees, and the depth is 1 mu m, so that the monocrystalline silicon substrate 211 is obtained.
And 3, respectively depositing a-Si and H (hydrogenated amorphous silicon) on the front surface and the back surface of the monocrystalline silicon substrate 211 by adopting a PECVD (plasma enhanced chemical vapor deposition) process to obtain a first amorphous silicon layer 212 and a second amorphous silicon layer 213, wherein the deposition temperature is 200 ℃, and the deposition thickness is 5nm.
In step 4, a PECVD process is adopted to deposit boron doped a-Si: H on the first amorphous silicon layer 212 to form a first doped layer 214, wherein the deposition temperature is 200 ℃, and the deposition thickness is 12nm.
And 5, depositing phosphorus doped a-Si: H on the second amorphous silicon layer 213 by adopting a PECVD process to form a second doped layer 216, wherein the deposition temperature is 200 ℃, and the deposition thickness is 6nm.
And 6, depositing ITO on the second doped layer 216 by adopting a magnetron sputtering process to form the first transparent conductive layer 4, wherein the deposition thickness is 110nm, and the sheet resistance is 120 omega/sq.
In step 7, silver is deposited on the first transparent conductive layer 4 at a low temperature by an evaporation process to form a first gate line 218.
In step 8, IZO is deposited on the first doped layer 214 by using a magnetron sputtering process to form a composite layer 219 with a deposition thickness of 15nm.
In step 9, a vapor deposition process is used to deposit C60-COOH-SAM on the composite layer 219 to form an electron transport layer 220 having a thickness of 15nm.
In step 10, a perovskite light absorbing layer 230 is deposited on the electron transport layer 220 using an evaporation process. The evaporation source comprises organic salts and inorganic salts, wherein the organic salts are FAI, FABr, MACl and FACl, and the inorganic salts are PbBr 2、PbI2 and CsI.
In the first stage, the temperature of the substrate is controlled to be 100 ℃, the temperature of each heat source is controlled, the evaporation rate ratio of the organic salt FAI, FABr, MACl, FACl is 3:2:1.5:3, the evaporation rate ratio of the inorganic salt PbBr 2、PbI2 to CsI is 1:19:1, and an N-type perovskite layer 231 is deposited on the electron transport layer 220, and the N-type perovskite layer has a composition of FA 0.8MA0.15Cs0.05Pb(I0.75Br0.1Cl0.15)3 and a thickness of 500nm.
In the second stage, the temperature of the substrate is adjusted to 80 ℃, the temperature of each heat source is controlled, the evaporation rate of each evaporation source is gradually adjusted, the ratio of the evaporation rates of the organic salt FAI, FABr, MACl, FACl is adjusted to be 1:1:4.5:3, the ratio of the evaporation rates of the inorganic salt PbBr 2、PbI2 and CsI is adjusted to be 12:1:0.5, and a P-type perovskite layer 232 is deposited on the N-type perovskite layer 231, wherein the component is FA 0.5MA0.45Cs0.05Pb(I0.85Br0.1Cl0.05)3, and the thickness is 500nm. And 11, co-evaporating the Spiro-TTB and the F6-TCNNQ by adopting an evaporation process, and depositing a hole transport layer 240 on the P-type perovskite layer 232 to form the thickness of 25nm.
In step 12, snO 2 is deposited on the hole transport layer 240 by an evaporation process to form a buffer layer 250, the deposited thickness being about 20nm.
In step 13, IZO is deposited on the buffer layer 250 by using a magnetron sputtering process to form the second transparent conductive layer 260, and the deposition thickness is about 100nm.
Step 14, silver is deposited on the second transparent conductive layer 260 by vapor deposition through a mask plate to form a second gate line 280 with a thickness of about 400nm.
And 14, adopting an evaporation process to deposit MgF x on the whole surface to form an antireflection layer 270, wherein the deposition thickness is about 120nm.
Comparative example 1
The difference between this comparative example and example 1 is that in step 2, both the P-type perovskite layer and the N-type perovskite layer were prepared using a conventional spin-coating process.
Comparative example 2
The difference between this comparative example and example 2 is that in step 10, both the P-type perovskite layer and the N-type perovskite layer were prepared using a conventional spin-coating process.
The solar cells prepared in examples 1 to 2 and comparative examples 1 to 2 were subjected to performance test, and the results are shown in table 1.
Table 1 results of performance test of solar cells of examples 1 to 2 and comparative examples 1 to 2
As can be seen from the results in table 1, in examples 1-2, perovskite film layers were formed by evaporation through an evaporation process, and P-type perovskite layer and N-type perovskite layer were formed by continuous deposition by adjusting the evaporation ratio of organic salt and inorganic salt by changing the evaporation temperature, compared with comparative examples 1-2, in-vivo recombination of carriers was reduced, open circuit voltage was significantly improved, and both the filling factor and conversion efficiency were also improved.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. The scope of the invention is, therefore, indicated by the appended claims, and the description may be intended to interpret the contents of the claims.
Claims (10)
1. A method for preparing a perovskite light absorbing layer, comprising the steps of:
And depositing a perovskite light absorption layer on the substrate by adopting an evaporation process, wherein the evaporation source comprises organic salt and inorganic salt, and the evaporation rate of the evaporation source is controlled to adjust the evaporation ratio of the organic salt and the inorganic salt, so that the ratio of the organic salt and the inorganic salt deposited on the substrate is adjusted to form the perovskite light absorption layer comprising the P-type perovskite layer and the N-type perovskite layer which are stacked.
2. The method of claim 1, wherein the organic salt has a molecular formula RX n, wherein R is at least one of formamidino and methylamino, X is at least one of Cl, br, I, and n corresponds to the stoichiometry.
3. The method of claim 1, wherein the inorganic salt has a molecular formula of QX 'n, wherein Q is at least one selected from Cs, pb, and Sn, X' is at least one selected from Cl, br, and I, and n corresponds to a stoichiometry.
4. The method of claim 1, wherein each of the evaporation sources is disposed on a different heat source, and the heating temperatures of the different heat sources are independently controlled to independently control the evaporation rates of the different evaporation sources.
5. The method for producing a perovskite light absorbing layer according to any one of claims 1 to 4, wherein, in a first stage of the vapor deposition process, a first type perovskite layer is formed by deposition at a first vapor deposition rate of each of the vapor deposition sources;
In the second stage of the evaporation process, controlling the evaporation rate of one or more evaporation sources to gradually change into respective second evaporation rates, so that the perovskite layer gradually transits from the first type perovskite layer to the second type perovskite layer;
the first type perovskite layer is a P-type perovskite layer, and the second type perovskite layer is an N-type perovskite layer; or the first type perovskite layer is an N type perovskite layer, and the second type perovskite layer is a P type perovskite layer.
6. The method of producing a perovskite light absorbing layer as claimed in claim 5, wherein the first type perovskite layer is a P-type perovskite layer, the second type perovskite layer is an N-type perovskite layer, and the temperature of the substrate in the second stage is controlled to be higher than the temperature of the substrate in the first stage; or alternatively
The first type perovskite layer is an N-type perovskite layer, the second type perovskite layer is a P-type perovskite layer, and the temperature of the substrate in the second stage is controlled to be lower than that of the substrate in the first stage.
7. A method of manufacturing a solar cell, comprising the steps of:
depositing the perovskite light absorbing layer on a substrate by the preparation method according to any one of claims 1 to 6;
An electrode layer is formed on the perovskite light absorbing layer.
8. The method of manufacturing a solar cell according to claim 7, further comprising the steps of:
And depositing by adopting an evaporation process to form a hole transport layer, wherein the hole transport layer is positioned between the electrode layer and the P-type perovskite layer.
9. The method of manufacturing a solar cell according to claim 7 or 8, further comprising the steps of:
and depositing an electron transport layer by adopting an evaporation process, wherein the electron transport layer is positioned between the substrate and the N-type perovskite layer.
10. A solar cell characterized by being produced by the production method according to any one of claims 7 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410328579.8A CN118175907A (en) | 2024-03-21 | 2024-03-21 | Preparation method of perovskite light absorption layer, solar cell and preparation method of solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202410328579.8A CN118175907A (en) | 2024-03-21 | 2024-03-21 | Preparation method of perovskite light absorption layer, solar cell and preparation method of solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN118175907A true CN118175907A (en) | 2024-06-11 |
Family
ID=91356102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202410328579.8A Pending CN118175907A (en) | 2024-03-21 | 2024-03-21 | Preparation method of perovskite light absorption layer, solar cell and preparation method of solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN118175907A (en) |
-
2024
- 2024-03-21 CN CN202410328579.8A patent/CN118175907A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112204764B (en) | MXene improved hybrid photoelectric converter | |
| Ravindiran et al. | Status review and the future prospects of CZTS based solar cell–A novel approach on the device structure and material modeling for CZTS based photovoltaic device | |
| US20230200096A1 (en) | Tandem cell | |
| JP7032933B2 (en) | How to deposit perovskite material | |
| CN109923687B (en) | Solar cell comprising a metal oxide buffer layer and method of manufacture | |
| TW201513380A (en) | A high efficiency stacked solar cell | |
| CN111081878A (en) | Perovskite/silicon-based heterojunction laminated solar cell and preparation method thereof | |
| CN114792704B (en) | Perovskite/silicon heterojunction laminated solar cell and preparation method thereof | |
| CN116761448A (en) | perovskite/IBC three-terminal laminated battery and preparation method thereof | |
| WO2021196606A1 (en) | Laminated photovoltaic device, and production method | |
| WO2023115870A1 (en) | Pn heterojunction antimony selenide/perovskite solar cell, and preparation method therefor | |
| Yadav et al. | Review on perovskite solar cells via vacuum and non-vacuum solution based methods | |
| KR101660311B1 (en) | Solar cell and method of preparing same | |
| KR101906712B1 (en) | Composition for light absorbing layer, solar cell comprising the same and its manufacturing method | |
| Laalioui | Perovskite-Based Solar Cells: From Fundamentals to Tandem Devices | |
| CN112086534B (en) | Laminated battery and manufacturing method thereof | |
| CN118175907A (en) | Preparation method of perovskite light absorption layer, solar cell and preparation method of solar cell | |
| CN115347071A (en) | Silicon/perovskite three-terminal laminated solar cell structure and preparation method | |
| CN118524723B (en) | Laminated solar cell and preparation method thereof | |
| US20230223205A1 (en) | Multijunction photovoltaic devices with metal oxynitride layer | |
| CN116782730A (en) | Preparation method of large-area wide-band-gap perovskite top battery for laminated battery | |
| CN118870845A (en) | Laminated battery, preparation method thereof and power utilization device | |
| CN118890946A (en) | Preparation method and application of perovskite film | |
| KR20240040478A (en) | Method of manufacturing tandem solar cell | |
| CN118870935A (en) | Laminated battery and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |